CN114556525B - 基板清洗方法和基板清洗装置 - Google Patents

基板清洗方法和基板清洗装置 Download PDF

Info

Publication number
CN114556525B
CN114556525B CN202080071208.6A CN202080071208A CN114556525B CN 114556525 B CN114556525 B CN 114556525B CN 202080071208 A CN202080071208 A CN 202080071208A CN 114556525 B CN114556525 B CN 114556525B
Authority
CN
China
Prior art keywords
nozzle
gas
substrate
supply
control unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080071208.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN114556525A (zh
Inventor
大野广基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN114556525A publication Critical patent/CN114556525A/zh
Application granted granted Critical
Publication of CN114556525B publication Critical patent/CN114556525B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0404—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN202080071208.6A 2019-10-23 2020-10-12 基板清洗方法和基板清洗装置 Active CN114556525B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-193049 2019-10-23
JP2019193049 2019-10-23
PCT/JP2020/038507 WO2021079779A1 (ja) 2019-10-23 2020-10-12 基板洗浄方法、および基板洗浄装置

Publications (2)

Publication Number Publication Date
CN114556525A CN114556525A (zh) 2022-05-27
CN114556525B true CN114556525B (zh) 2025-01-10

Family

ID=75619807

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080071208.6A Active CN114556525B (zh) 2019-10-23 2020-10-12 基板清洗方法和基板清洗装置

Country Status (6)

Country Link
US (2) US12198947B2 (https=)
JP (1) JP7258176B2 (https=)
KR (1) KR102825479B1 (https=)
CN (1) CN114556525B (https=)
TW (1) TWI867065B (https=)
WO (1) WO2021079779A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121446781B (zh) * 2026-01-07 2026-04-28 四川禾牧机械制造有限公司 一种碳头输送喷射清理系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794489A (ja) * 1993-09-20 1995-04-07 Tokyo Electron Ltd 処理装置のクリーニング方法
JP2013046001A (ja) * 2011-08-26 2013-03-04 Iwatani Internatl Corp クラスタによる加工方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833319A (en) * 1987-02-27 1989-05-23 Hughes Aircraft Company Carrier gas cluster source for thermally conditioned clusters
JPH09232325A (ja) * 1996-02-26 1997-09-05 Komatsu Electron Metals Co Ltd シリコンウェーハの熱処理方法
US6534608B2 (en) * 2000-12-07 2003-03-18 Univation Technologies, Llc Support materials for use with polymerization catalysts
JP4426989B2 (ja) * 2005-03-17 2010-03-03 キヤノンアネルバ株式会社 薄膜作製方法並びに薄膜作製装置及び水蒸気供給装置
JP2007165661A (ja) * 2005-12-14 2007-06-28 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP4802002B2 (ja) * 2006-01-30 2011-10-26 芝浦メカトロニクス株式会社 基板の洗浄処理装置及び洗浄処理方法
JP2008043909A (ja) * 2006-08-21 2008-02-28 Air Water Inc ドライアイススノー洗浄装置および方法
US8056832B2 (en) * 2008-10-30 2011-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Jetspray nozzle and method for cleaning photo masks and semiconductor wafers
US8097860B2 (en) * 2009-02-04 2012-01-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam processing system and method of operating
JP2011168881A (ja) * 2010-01-25 2011-09-01 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
JP5984424B2 (ja) * 2012-02-27 2016-09-06 国立大学法人京都大学 基板洗浄方法、基板洗浄装置及び真空処理装置
JP2015026745A (ja) * 2013-07-26 2015-02-05 東京エレクトロン株式会社 基板洗浄方法及び基板洗浄装置
JP6311236B2 (ja) * 2013-08-20 2018-04-18 東京エレクトロン株式会社 基板洗浄装置
JP6690915B2 (ja) * 2014-10-06 2020-04-28 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド 極低温流体混合物で基板を処理するシステムおよび方法
US10014191B2 (en) * 2014-10-06 2018-07-03 Tel Fsi, Inc. Systems and methods for treating substrates with cryogenic fluid mixtures
US9984858B2 (en) * 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
WO2017094389A1 (ja) * 2015-11-30 2017-06-08 東京エレクトロン株式会社 基板洗浄方法
JP6596340B2 (ja) * 2016-01-21 2019-10-23 東京エレクトロン株式会社 基板洗浄方法および基板洗浄装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794489A (ja) * 1993-09-20 1995-04-07 Tokyo Electron Ltd 処理装置のクリーニング方法
JP2013046001A (ja) * 2011-08-26 2013-03-04 Iwatani Internatl Corp クラスタによる加工方法

Also Published As

Publication number Publication date
TW202123315A (zh) 2021-06-16
KR20220086606A (ko) 2022-06-23
US12198947B2 (en) 2025-01-14
WO2021079779A1 (ja) 2021-04-29
US20220367214A1 (en) 2022-11-17
JPWO2021079779A1 (https=) 2021-04-29
JP7258176B2 (ja) 2023-04-14
CN114556525A (zh) 2022-05-27
KR102825479B1 (ko) 2025-06-30
US20250069907A1 (en) 2025-02-27
TWI867065B (zh) 2024-12-21

Similar Documents

Publication Publication Date Title
US6729561B2 (en) Cleaning nozzle and substrate cleaning apparatus
TWI443722B (zh) 基板處理裝置及基板處理方法
US10619894B2 (en) Substrate processing apparatus and substrate processing method
CN106920763B (zh) 基板处理装置及基板处理方法
JP2014027245A (ja) 基板処理装置及び基板処理方法
CN110660641A (zh) 衬底处理方法及衬底处理装置
CN109661718B (zh) 基板清洗方法、基板清洗规程作成方法以及基板清洗规程作成装置
CN114556525B (zh) 基板清洗方法和基板清洗装置
JP2006093497A (ja) 基板洗浄装置
CN113169062B (zh) 基板清洗方法、处理容器清洗方法及基板处理装置
JP4357943B2 (ja) 基板処理法及び基板処理装置
JP2012018962A (ja) 基板処理方法および基板処理装置
JP2010067640A (ja) 基板処理装置及び基板処理方法
CN117836909A (zh) 基片处理装置和基片处理方法
JP7511627B2 (ja) 基板処理装置及び基板処理方法
JP4318295B2 (ja) 基板洗浄方法及び基板洗浄装置
JP2017143291A (ja) 基板処理装置及び基板処理方法並びに基板処理プログラムを記録したコンピュータ読み取り可能な記録媒体
TWI735012B (zh) 基板處理方法及基板處理裝置
JP2004247752A (ja) クローズドマニュファクチャリング装置およびこの装置を用いて被洗浄基板を処理する方法
JP2018153748A (ja) 付着物除去方法
JP3400223B2 (ja) 半導体の製造方法および製造装置、並びに半導体ウェハおよび半導体素子
JP2017069265A (ja) 基板処理装置および基板処理方法
CN114787971A (zh) 基板处理方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant