KR102777020B1 - 디설파이드구조를 갖는 레지스트 하층막형성 조성물 - Google Patents

디설파이드구조를 갖는 레지스트 하층막형성 조성물 Download PDF

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KR102777020B1
KR102777020B1 KR1020207021581A KR20207021581A KR102777020B1 KR 102777020 B1 KR102777020 B1 KR 102777020B1 KR 1020207021581 A KR1020207021581 A KR 1020207021581A KR 20207021581 A KR20207021581 A KR 20207021581A KR 102777020 B1 KR102777020 B1 KR 102777020B1
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resist
group
underlayer film
resist underlayer
film
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KR20200118007A (ko
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타카후미 엔도
유이치 고토
야스노부 소메야
류타 미즈오치
사토시 카미바야시
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닛산 가가쿠 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32—Epoxy compounds containing three or more epoxy groups
    • C08G59/3236—Heterocylic compounds
    • C08G59/3245—Heterocylic compounds containing only nitrogen as a heteroatom
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/4007—Curing agents not provided for by the groups C08G59/42 - C08G59/66
    • C08G59/4064—Curing agents not provided for by the groups C08G59/42 - C08G59/66 sulfur containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
    • C08K5/37—Thiols
    • C08K5/372—Sulfides, e.g. R-(S)x-R'
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Epoxy Resins (AREA)
KR1020207021581A 2018-02-02 2019-02-01 디설파이드구조를 갖는 레지스트 하층막형성 조성물 Active KR102777020B1 (ko)

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Application Number Priority Date Filing Date Title
JPJP-P-2018-017167 2018-02-02
JP2018017167 2018-02-02
JP2018121282 2018-06-26
JPJP-P-2018-121282 2018-06-26
PCT/JP2019/003574 WO2019151471A1 (ja) 2018-02-02 2019-02-01 ジスルフィド構造を有するレジスト下層膜形成組成物

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KR20200118007A KR20200118007A (ko) 2020-10-14
KR102777020B1 true KR102777020B1 (ko) 2025-03-07

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US (1) US12222651B2 (enExample)
JP (2) JP7396049B2 (enExample)
KR (1) KR102777020B1 (enExample)
CN (1) CN111670410A (enExample)
TW (1) TWI840342B (enExample)
WO (1) WO2019151471A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7375757B2 (ja) * 2018-07-24 2023-11-08 日産化学株式会社 ヘテロ原子をポリマー主鎖中に含むレジスト下層膜形成組成物
JP7408047B2 (ja) * 2018-07-31 2024-01-05 日産化学株式会社 レジスト下層膜形成組成物
CN111809195B (zh) * 2019-04-12 2021-12-21 北京工商大学 α-二硫醚二羧酸类化合物的电化学催化氧化偶联合成方法
TW202128671A (zh) * 2019-10-10 2021-08-01 日商日產化學股份有限公司 包含雜環化合物之阻劑下層膜形成組成物
CN119472173A (zh) 2020-06-12 2025-02-18 日产化学株式会社 包含二醇结构的抗蚀剂下层膜形成用组合物
CN115989571A (zh) 2020-09-07 2023-04-18 日产化学株式会社 晶片处理方法
US20240004295A1 (en) * 2020-10-07 2024-01-04 Nissan Chemical Corporation Resist underlayer film-forming composition containing a reaction product of trifunctional compound
US20240126172A1 (en) * 2022-09-16 2024-04-18 Rohm And Haas Electronic Materials Llc Photoresist underlayer composition

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010169893A (ja) 2009-01-22 2010-08-05 Tokyo Ohka Kogyo Co Ltd 被覆パターン形成方法、レジスト被覆膜形成用材料、レジスト組成物、パターン形成方法
JP2014010382A (ja) * 2012-07-02 2014-01-20 Fujifilm Corp 感光性転写材料、硬化膜およびその製造方法、有機ｅｌ表示装置、液晶表示装置並びに静電容量型入力装置
JP2015108781A (ja) 2013-12-05 2015-06-11 東京応化工業株式会社 ネガ型レジスト組成物、レジストパターン形成方法及び錯体
JP2017120359A (ja) 2015-12-24 2017-07-06 Jsr株式会社 半導体用ケイ素含有膜形成用材料及びパターン形成方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3368680B2 (ja) * 1994-09-12 2003-01-20 日産化学工業株式会社 新規エポキシ化合物及びその製造方法
JP4124678B2 (ja) * 2002-03-12 2008-07-23 三井化学株式会社 チオエポキシ系重合性組成物の製造方法
JP4279070B2 (ja) * 2003-02-20 2009-06-17 Ｈｏｙａ株式会社 光学製品
JP4895034B2 (ja) * 2006-05-24 2012-03-14 Ｊｓｒ株式会社 感放射線性樹脂組成物、スペーサーおよびその形成方法
WO2008026468A1 (fr) * 2006-08-28 2008-03-06 Nissan Chemical Industries, Ltd. Composition servant à créer une sous-couche de réserve et contenant un additif liquide
JP4938539B2 (ja) * 2007-04-24 2012-05-23 凸版印刷株式会社 アルカリ現像型樹脂、フォトスペーサ用感光性樹脂組成物、及びこれを用いた液晶表示装置用基板
JP2009096340A (ja) 2007-10-17 2009-05-07 Toyota Motor Corp ハイブリッド車およびその制御方法
JP5218785B2 (ja) * 2008-01-30 2013-06-26 日産化学工業株式会社 硫黄原子を含有するレジスト下層膜形成用組成物及びレジストパターンの形成方法
WO2010126920A2 (en) * 2009-04-29 2010-11-04 Henkel Corporation Moisture curable polydisulfides
US8877425B2 (en) * 2010-10-22 2014-11-04 Nissan Chemical Industries, Ltd. Silicon-containing resist underlayer film forming composition having fluorine-based additive
KR20180082617A (ko) * 2012-02-09 2018-07-18 닛산 가가쿠 고교 가부시키 가이샤 막형성 조성물 및 이온주입방법
KR20160044059A (ko) * 2012-04-27 2016-04-22 후지필름 가부시키가이샤 화학 증폭형 포지티브형 감광성 수지 조성물, 경화막의 제조 방법, 경화막, 유기 el 표시 장치 및 액정 표시 장치
WO2015098525A1 (ja) * 2013-12-27 2015-07-02 日産化学工業株式会社 トリアジン環及び硫黄原子を主鎖に有する共重合体を含むレジスト下層膜形成組成物
CN106133606B (zh) * 2014-03-26 2019-06-28 日产化学工业株式会社 添加剂以及包含该添加剂的抗蚀剂下层膜形成用组合物
JP2015209509A (ja) * 2014-04-28 2015-11-24 京セラケミカル株式会社 エポキシ樹脂組成物および樹脂封止型電子部品装置
EP3106488A1 (en) * 2015-06-19 2016-12-21 Université de Haute Alsace Photobase-catalysed oxidative polymerisation of poly (disulphide)s
KR102522912B1 (ko) * 2015-07-02 2023-04-18 닛산 가가쿠 가부시키가이샤 장쇄알킬기를 갖는 에폭시부가체를 포함하는 레지스트 하층막 형성 조성물
KR102516390B1 (ko) * 2016-01-05 2023-03-31 에스케이이노베이션 주식회사 신규한 티오바르비투르산 유도체, 이로부터 유도되는 반복 단위를 포함하는 중합체, 이를 포함하는 바닥반사방지막용 조성물 및 이를 이용한 레지스트 패턴의 형성 방법
KR20190028651A (ko) 2016-07-15 2019-03-19 닛산 가가쿠 가부시키가이샤 히단토인환을 갖는 화합물을 포함하는 레지스트 하층막형성 조성물

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010169893A (ja) 2009-01-22 2010-08-05 Tokyo Ohka Kogyo Co Ltd 被覆パターン形成方法、レジスト被覆膜形成用材料、レジスト組成物、パターン形成方法
JP2014010382A (ja) * 2012-07-02 2014-01-20 Fujifilm Corp 感光性転写材料、硬化膜およびその製造方法、有機ｅｌ表示装置、液晶表示装置並びに静電容量型入力装置
JP2015108781A (ja) 2013-12-05 2015-06-11 東京応化工業株式会社 ネガ型レジスト組成物、レジストパターン形成方法及び錯体
JP2017120359A (ja) 2015-12-24 2017-07-06 Jsr株式会社 半導体用ケイ素含有膜形成用材料及びパターン形成方法

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JP7396049B2 (ja) 2023-12-12
US12222651B2 (en) 2025-02-11
CN111670410A (zh) 2020-09-15
KR20200118007A (ko) 2020-10-14
WO2019151471A1 (ja) 2019-08-08
JP7647808B2 (ja) 2025-03-18
US20210063881A1 (en) 2021-03-04
JPWO2019151471A1 (ja) 2021-02-12
JP2023159163A (ja) 2023-10-31
TWI840342B (zh) 2024-05-01
TW201940979A (zh) 2019-10-16

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