KR102773249B1 - 기판 지지기 및 플라즈마 처리 장치 - Google Patents

기판 지지기 및 플라즈마 처리 장치 Download PDF

Info

Publication number
KR102773249B1
KR102773249B1 KR1020190140988A KR20190140988A KR102773249B1 KR 102773249 B1 KR102773249 B1 KR 102773249B1 KR 1020190140988 A KR1020190140988 A KR 1020190140988A KR 20190140988 A KR20190140988 A KR 20190140988A KR 102773249 B1 KR102773249 B1 KR 102773249B1
Authority
KR
South Korea
Prior art keywords
conductor
electrode
annular
chuck
annular electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020190140988A
Other languages
English (en)
Korean (ko)
Other versions
KR20200053424A (ko
Inventor
야스하루 사사키
신고 고이와
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20200053424A publication Critical patent/KR20200053424A/ko
Application granted granted Critical
Publication of KR102773249B1 publication Critical patent/KR102773249B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H01L21/6833—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01L21/68721—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020190140988A 2018-11-08 2019-11-06 기판 지지기 및 플라즈마 처리 장치 Active KR102773249B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2018-210734 2018-11-08
JP2018210734A JP7145042B2 (ja) 2018-11-08 2018-11-08 基板支持器及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20200053424A KR20200053424A (ko) 2020-05-18
KR102773249B1 true KR102773249B1 (ko) 2025-02-25

Family

ID=70549935

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190140988A Active KR102773249B1 (ko) 2018-11-08 2019-11-06 기판 지지기 및 플라즈마 처리 장치

Country Status (4)

Country Link
US (1) US11798791B2 (enExample)
JP (1) JP7145042B2 (enExample)
KR (1) KR102773249B1 (enExample)
CN (1) CN111161990B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6960390B2 (ja) * 2018-12-14 2021-11-05 東京エレクトロン株式会社 給電構造及びプラズマ処理装置
US12266511B2 (en) * 2019-11-26 2025-04-01 Tokyo Electron Limited Substrate support and substrate processing apparatus
JP7308767B2 (ja) * 2020-01-08 2023-07-14 東京エレクトロン株式会社 載置台およびプラズマ処理装置
JP7550551B2 (ja) * 2020-06-30 2024-09-13 京セラ株式会社 静電チャック
CN112349576B (zh) * 2020-10-20 2022-09-16 北京北方华创微电子装备有限公司 下电极组件及半导体工艺设备
TW202537006A (zh) * 2024-02-02 2025-09-16 日商東京威力科創股份有限公司 基板處理裝置及托盤
WO2026100271A1 (ja) * 2024-11-05 2026-05-15 Ｎｇｋ株式会社 サセプタ

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011009351A (ja) * 2009-06-24 2011-01-13 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2014072355A (ja) * 2012-09-28 2014-04-21 Ngk Spark Plug Co Ltd 静電チャック
JP2015088686A (ja) * 2013-11-01 2015-05-07 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
JP2017195060A (ja) * 2016-04-19 2017-10-26 日本特殊陶業株式会社 加熱部材及び複合加熱部材

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5001594A (en) * 1989-09-06 1991-03-19 Mcnc Electrostatic handling device
EP0635870A1 (en) * 1993-07-20 1995-01-25 Applied Materials, Inc. An electrostatic chuck having a grooved surface
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
US20040066601A1 (en) * 2002-10-04 2004-04-08 Varian Semiconductor Equipment Associates, Inc. Electrode configuration for retaining cooling gas on electrostatic wafer clamp
KR100573351B1 (ko) * 2002-12-26 2006-04-25 미츠비시 쥬고교 가부시키가이샤 정전 척
JP5317424B2 (ja) * 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
JP5508737B2 (ja) * 2009-02-24 2014-06-04 東京エレクトロン株式会社 静電チャック及びプラズマ処理装置
US9423308B2 (en) * 2012-01-12 2016-08-23 Universiteit Twente Six-axis force-torque sensor
US8754769B2 (en) * 2012-02-26 2014-06-17 AdhereTech Inc. Systems and methods for determining container contents, locations, and surroundings
JP6378942B2 (ja) * 2014-06-12 2018-08-22 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6346855B2 (ja) * 2014-12-25 2018-06-20 東京エレクトロン株式会社 静電吸着方法及び基板処理装置
FR3050339B1 (fr) * 2016-04-15 2020-08-28 Enerbee Generateur d'electricite comprenant un convertisseur magneto-electrique et son procede de fabrication
JP6637846B2 (ja) * 2016-06-23 2020-01-29 東京エレクトロン株式会社 フィルタを設計する方法
US10460969B2 (en) * 2016-08-22 2019-10-29 Applied Materials, Inc. Bipolar electrostatic chuck and method for using the same
JP6924618B2 (ja) * 2017-05-30 2021-08-25 東京エレクトロン株式会社 静電チャック及びプラズマ処理装置
US11289355B2 (en) * 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US20180374736A1 (en) * 2017-06-22 2018-12-27 Applied Materials, Inc. Electrostatic carrier for die bonding applications

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011009351A (ja) * 2009-06-24 2011-01-13 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2014072355A (ja) * 2012-09-28 2014-04-21 Ngk Spark Plug Co Ltd 静電チャック
JP2015088686A (ja) * 2013-11-01 2015-05-07 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
JP2017195060A (ja) * 2016-04-19 2017-10-26 日本特殊陶業株式会社 加熱部材及び複合加熱部材

Also Published As

Publication number Publication date
KR20200053424A (ko) 2020-05-18
JP2020077786A (ja) 2020-05-21
CN111161990B (zh) 2025-01-10
US20200152429A1 (en) 2020-05-14
CN111161990A (zh) 2020-05-15
US11798791B2 (en) 2023-10-24
JP7145042B2 (ja) 2022-09-30

Similar Documents

Publication Publication Date Title
KR102729403B1 (ko) 기판 지지기, 플라즈마 처리 장치, 및 포커스 링
US11798791B2 (en) Substrate support and plasma processing apparatus
KR102786117B1 (ko) 급전 구조 및 플라즈마 처리 장치
TWI857215B (zh) 基板支持器及電漿處理裝置
CN109872939B (zh) 支承组件和支承组件的组装方法
CN108987233A (zh) 等离子体处理装置、静电吸附方法和静电吸附程序
KR102734482B1 (ko) 정전 척, 포커스 링, 지지대, 플라즈마 처리 장치, 및 플라즈마 처리 방법
KR20260065780A (ko) 플라즈마 처리 장치
KR102878028B1 (ko) 적재대 및 플라스마 처리 장치
JP2023002987A (ja) 基板支持器、プラズマ処理装置、及びエッジリング
US20230268216A1 (en) Substrate support and plasma processing apparatus
KR20260025360A (ko) 플라즈마 처리 장치
JP2023112675A (ja) 基板支持部及びプラズマ処理装置
TW202445741A (zh) 支持體、基板支持器及電漿處理裝置
CN118402054A (zh) 基片支承器和等离子体处理装置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000