CN111161990B - 基片支承器和等离子体处理装置 - Google Patents

基片支承器和等离子体处理装置 Download PDF

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Publication number
CN111161990B
CN111161990B CN201911069339.6A CN201911069339A CN111161990B CN 111161990 B CN111161990 B CN 111161990B CN 201911069339 A CN201911069339 A CN 201911069339A CN 111161990 B CN111161990 B CN 111161990B
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China
Prior art keywords
electrode
region
wire
annular electrode
substrate support
Prior art date
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Active
Application number
CN201911069339.6A
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English (en)
Chinese (zh)
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CN111161990A (zh
Inventor
佐佐木康晴
小岩真悟
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
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Publication of CN111161990A publication Critical patent/CN111161990A/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
CN201911069339.6A 2018-11-08 2019-11-05 基片支承器和等离子体处理装置 Active CN111161990B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-210734 2018-11-08
JP2018210734A JP7145042B2 (ja) 2018-11-08 2018-11-08 基板支持器及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
CN111161990A CN111161990A (zh) 2020-05-15
CN111161990B true CN111161990B (zh) 2025-01-10

Family

ID=70549935

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911069339.6A Active CN111161990B (zh) 2018-11-08 2019-11-05 基片支承器和等离子体处理装置

Country Status (4)

Country Link
US (1) US11798791B2 (enExample)
JP (1) JP7145042B2 (enExample)
KR (1) KR102773249B1 (enExample)
CN (1) CN111161990B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6960390B2 (ja) * 2018-12-14 2021-11-05 東京エレクトロン株式会社 給電構造及びプラズマ処理装置
US12266511B2 (en) * 2019-11-26 2025-04-01 Tokyo Electron Limited Substrate support and substrate processing apparatus
JP7308767B2 (ja) * 2020-01-08 2023-07-14 東京エレクトロン株式会社 載置台およびプラズマ処理装置
JP7550551B2 (ja) * 2020-06-30 2024-09-13 京セラ株式会社 静電チャック
CN112349576B (zh) * 2020-10-20 2022-09-16 北京北方华创微电子装备有限公司 下电极组件及半导体工艺设备
TW202537006A (zh) * 2024-02-02 2025-09-16 日商東京威力科創股份有限公司 基板處理裝置及托盤
WO2026100271A1 (ja) * 2024-11-05 2026-05-15 Ｎｇｋ株式会社 サセプタ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011009351A (ja) * 2009-06-24 2011-01-13 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2014072355A (ja) * 2012-09-28 2014-04-21 Ngk Spark Plug Co Ltd 静電チャック

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Publication number Priority date Publication date Assignee Title
US5001594A (en) * 1989-09-06 1991-03-19 Mcnc Electrostatic handling device
EP0635870A1 (en) * 1993-07-20 1995-01-25 Applied Materials, Inc. An electrostatic chuck having a grooved surface
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
US20040066601A1 (en) * 2002-10-04 2004-04-08 Varian Semiconductor Equipment Associates, Inc. Electrode configuration for retaining cooling gas on electrostatic wafer clamp
KR100573351B1 (ko) * 2002-12-26 2006-04-25 미츠비시 쥬고교 가부시키가이샤 정전 척
JP5317424B2 (ja) * 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
JP5508737B2 (ja) * 2009-02-24 2014-06-04 東京エレクトロン株式会社 静電チャック及びプラズマ処理装置
US9423308B2 (en) * 2012-01-12 2016-08-23 Universiteit Twente Six-axis force-torque sensor
US8754769B2 (en) * 2012-02-26 2014-06-17 AdhereTech Inc. Systems and methods for determining container contents, locations, and surroundings
JP5938716B2 (ja) * 2013-11-01 2016-06-22 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
JP6378942B2 (ja) * 2014-06-12 2018-08-22 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6346855B2 (ja) * 2014-12-25 2018-06-20 東京エレクトロン株式会社 静電吸着方法及び基板処理装置
FR3050339B1 (fr) * 2016-04-15 2020-08-28 Enerbee Generateur d'electricite comprenant un convertisseur magneto-electrique et son procede de fabrication
JP6741461B2 (ja) * 2016-04-19 2020-08-19 日本特殊陶業株式会社 加熱部材及び複合加熱部材
JP6637846B2 (ja) * 2016-06-23 2020-01-29 東京エレクトロン株式会社 フィルタを設計する方法
US10460969B2 (en) * 2016-08-22 2019-10-29 Applied Materials, Inc. Bipolar electrostatic chuck and method for using the same
JP6924618B2 (ja) * 2017-05-30 2021-08-25 東京エレクトロン株式会社 静電チャック及びプラズマ処理装置
US11289355B2 (en) * 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US20180374736A1 (en) * 2017-06-22 2018-12-27 Applied Materials, Inc. Electrostatic carrier for die bonding applications

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011009351A (ja) * 2009-06-24 2011-01-13 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2014072355A (ja) * 2012-09-28 2014-04-21 Ngk Spark Plug Co Ltd 静電チャック

Also Published As

Publication number Publication date
KR20200053424A (ko) 2020-05-18
JP2020077786A (ja) 2020-05-21
US20200152429A1 (en) 2020-05-14
CN111161990A (zh) 2020-05-15
US11798791B2 (en) 2023-10-24
JP7145042B2 (ja) 2022-09-30
KR102773249B1 (ko) 2025-02-25

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