KR102737019B1 - 에칭 방법 - Google Patents
에칭 방법 Download PDFInfo
- Publication number
- KR102737019B1 KR102737019B1 KR1020237007617A KR20237007617A KR102737019B1 KR 102737019 B1 KR102737019 B1 KR 102737019B1 KR 1020237007617 A KR1020237007617 A KR 1020237007617A KR 20237007617 A KR20237007617 A KR 20237007617A KR 102737019 B1 KR102737019 B1 KR 102737019B1
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- etching method
- film
- etching
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
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- H01L21/31116—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H01L21/0332—
-
- H01L21/31144—
-
- H01L21/32137—
-
- H01L21/32139—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
- H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020247039533A KR20250005413A (ko) | 2021-04-28 | 2021-04-28 | 에칭 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/017012 WO2022230118A1 (ja) | 2021-04-28 | 2021-04-28 | エッチング方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247039533A Division KR20250005413A (ko) | 2021-04-28 | 2021-04-28 | 에칭 방법 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| KR20230137285A KR20230137285A (ko) | 2023-10-04 |
| KR102737019B1 true KR102737019B1 (ko) | 2024-12-03 |
| KR102737019B9 KR102737019B9 (ko) | 2025-06-05 |
Family
ID=83848133
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237007617A Active KR102737019B1 (ko) | 2021-04-28 | 2021-04-28 | 에칭 방법 |
| KR1020247039533A Pending KR20250005413A (ko) | 2021-04-28 | 2021-04-28 | 에칭 방법 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247039533A Pending KR20250005413A (ko) | 2021-04-28 | 2021-04-28 | 에칭 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20230268191A1 (https=) |
| JP (3) | JP7336623B2 (https=) |
| KR (2) | KR102737019B1 (https=) |
| CN (1) | CN116034454A (https=) |
| TW (2) | TWI890783B (https=) |
| WO (1) | WO2022230118A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7773971B2 (ja) * | 2022-12-27 | 2025-11-20 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| WO2024171666A1 (ja) * | 2023-02-13 | 2024-08-22 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| CN120642031A (zh) * | 2023-02-13 | 2025-09-12 | 东京毅力科创株式会社 | 蚀刻方法和等离子体处理装置 |
| JP7836946B2 (ja) * | 2023-09-28 | 2026-03-27 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| US20250293042A1 (en) * | 2024-03-15 | 2025-09-18 | Tokyo Electron Limited | Harc etch chemistry for seminconductors |
| WO2026035547A1 (en) * | 2024-08-05 | 2026-02-12 | Lam Research Corporation | High aspect ratio feature etching by multi-state pulsing |
| WO2026035464A1 (en) * | 2024-08-06 | 2026-02-12 | Lam Research Corporation | Selective etch with respect to carbon mask to provide local cd uniformity |
| JP7751768B1 (ja) * | 2025-03-21 | 2025-10-08 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009277890A (ja) | 2008-05-15 | 2009-11-26 | Sekisui Chem Co Ltd | エッチング方法及び装置 |
| US20190206694A1 (en) | 2016-08-22 | 2019-07-04 | Tokyo Electron Limited | Etching Method and Method for Manufacturing Dram Capacitor |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60110122A (ja) * | 1983-11-18 | 1985-06-15 | Semiconductor Energy Lab Co Ltd | 半導体エッチング方法 |
| JPS61224325A (ja) * | 1985-03-28 | 1986-10-06 | Toshiba Corp | コンタクト孔の形成方法 |
| JPS6230330A (ja) * | 1985-07-31 | 1987-02-09 | Toshiba Corp | ドライエツチング方法 |
| US5126169A (en) * | 1986-08-28 | 1992-06-30 | Canon Kabushiki Kaisha | Process for forming a deposited film from two mutually reactive active species |
| JPH08181116A (ja) * | 1994-12-26 | 1996-07-12 | Mitsubishi Electric Corp | ドライエッチング方法及びドライエッチング装置 |
| KR0179281B1 (ko) * | 1996-02-28 | 1999-10-01 | 문정환 | 챔버를 갖는 베이퍼-에치 장치의 에치-종말점 측정방법 |
| US6074954A (en) * | 1998-08-31 | 2000-06-13 | Applied Materials, Inc | Process for control of the shape of the etch front in the etching of polysilicon |
| US20090286402A1 (en) * | 2008-05-13 | 2009-11-19 | Applied Materials, Inc | Method for critical dimension shrink using conformal pecvd films |
| TWI390582B (zh) * | 2008-07-16 | 2013-03-21 | 住友重機械工業股份有限公司 | Plasma processing device and plasma processing method |
| US8809195B2 (en) * | 2008-10-20 | 2014-08-19 | Asm America, Inc. | Etching high-k materials |
| US9580809B2 (en) * | 2014-01-16 | 2017-02-28 | The United States Of America, As Represented By The Secretary Of Commerce | Article with gradient property and processes for selective etching |
| JP2016012609A (ja) * | 2014-06-27 | 2016-01-21 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6423643B2 (ja) | 2014-08-08 | 2018-11-14 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
| JP6613207B2 (ja) * | 2015-11-13 | 2019-11-27 | 東京エレクトロン株式会社 | 被処理体をエッチングする方法 |
| KR101874821B1 (ko) * | 2016-04-05 | 2018-07-06 | 주식회사 테스 | 저온 공정을 이용한 실리콘산화막의 선택적 식각 방법 |
| JP7109165B2 (ja) * | 2017-05-30 | 2022-07-29 | 東京エレクトロン株式会社 | エッチング方法 |
| KR102741055B1 (ko) * | 2018-02-15 | 2024-12-10 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 에칭 방법 및 플라즈마 에칭 장치 |
| JP7366918B2 (ja) * | 2018-03-16 | 2023-10-23 | ラム リサーチ コーポレーション | 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質 |
| US11270889B2 (en) * | 2018-06-04 | 2022-03-08 | Tokyo Electron Limited | Etching method and etching apparatus |
| KR102904251B1 (ko) * | 2019-02-18 | 2025-12-24 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
| WO2021090798A1 (ja) * | 2019-11-08 | 2021-05-14 | 東京エレクトロン株式会社 | エッチング方法 |
| US11456180B2 (en) * | 2019-11-08 | 2022-09-27 | Tokyo Electron Limited | Etching method |
| JP7604145B2 (ja) * | 2019-11-25 | 2024-12-23 | 東京エレクトロン株式会社 | 基板処理方法及びプラズマ処理装置 |
| US11342194B2 (en) * | 2019-11-25 | 2022-05-24 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
| KR102459129B1 (ko) * | 2020-04-30 | 2022-10-26 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법 및 플라즈마 처리 장치 |
| WO2022234640A1 (ja) * | 2021-05-07 | 2022-11-10 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
-
2021
- 2021-04-28 CN CN202180054563.7A patent/CN116034454A/zh active Pending
- 2021-04-28 WO PCT/JP2021/017012 patent/WO2022230118A1/ja not_active Ceased
- 2021-04-28 JP JP2023514954A patent/JP7336623B2/ja active Active
- 2021-04-28 KR KR1020237007617A patent/KR102737019B1/ko active Active
- 2021-04-28 KR KR1020247039533A patent/KR20250005413A/ko active Pending
- 2021-05-04 TW TW110116004A patent/TWI890783B/zh active
- 2021-05-04 TW TW114123571A patent/TW202538867A/zh unknown
-
2023
- 2023-03-16 JP JP2023041775A patent/JP7639042B2/ja active Active
- 2023-04-28 US US18/140,694 patent/US20230268191A1/en active Pending
-
2025
- 2025-02-19 JP JP2025024843A patent/JP2025068048A/ja active Pending
- 2025-06-23 US US19/245,988 patent/US20250323055A1/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009277890A (ja) | 2008-05-15 | 2009-11-26 | Sekisui Chem Co Ltd | エッチング方法及び装置 |
| US20190206694A1 (en) | 2016-08-22 | 2019-07-04 | Tokyo Electron Limited | Etching Method and Method for Manufacturing Dram Capacitor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7336623B2 (ja) | 2023-08-31 |
| TW202538867A (zh) | 2025-10-01 |
| WO2022230118A1 (ja) | 2022-11-03 |
| US20230268191A1 (en) | 2023-08-24 |
| JPWO2022230118A1 (https=) | 2022-11-03 |
| JP2025068048A (ja) | 2025-04-24 |
| TW202242995A (zh) | 2022-11-01 |
| JP7639042B2 (ja) | 2025-03-04 |
| JP2023063526A (ja) | 2023-05-09 |
| TWI890783B (zh) | 2025-07-21 |
| US20250323055A1 (en) | 2025-10-16 |
| CN116034454A (zh) | 2023-04-28 |
| KR20230137285A (ko) | 2023-10-04 |
| KR102737019B9 (ko) | 2025-06-05 |
| KR20250005413A (ko) | 2025-01-09 |
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| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
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St.27 status event code: A-2-2-P10-P11-nap-X000 |
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St.27 status event code: A-5-5-P10-P19-oth-PG1701 Patent document republication publication date: 20250605 Republication note text: Request for Correction Notice Gazette number: 1027370190000 Gazette reference publication date: 20241203 |
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