KR102727105B1 - 탄성파 장치, 고주파 프론트 엔드 회로 및 통신 장치 - Google Patents

탄성파 장치, 고주파 프론트 엔드 회로 및 통신 장치 Download PDF

Info

Publication number
KR102727105B1
KR102727105B1 KR1020217041791A KR20217041791A KR102727105B1 KR 102727105 B1 KR102727105 B1 KR 102727105B1 KR 1020217041791 A KR1020217041791 A KR 1020217041791A KR 20217041791 A KR20217041791 A KR 20217041791A KR 102727105 B1 KR102727105 B1 KR 102727105B1
Authority
KR
South Korea
Prior art keywords
elastic wave
piezoelectric layer
wave device
filter
supporting substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217041791A
Other languages
English (en)
Korean (ko)
Other versions
KR20220011693A (ko
Inventor
히데키 이와모토
Original Assignee
가부시키가이샤 무라타 세이사쿠쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 무라타 세이사쿠쇼 filed Critical 가부시키가이샤 무라타 세이사쿠쇼
Publication of KR20220011693A publication Critical patent/KR20220011693A/ko
Application granted granted Critical
Publication of KR102727105B1 publication Critical patent/KR102727105B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/566—Electric coupling means therefor
    • H03H9/568—Electric coupling means therefor consisting of a ladder configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02551—Characteristics of substrate, e.g. cutting angles of quartz substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H03H9/14541—Multilayer finger or busbar electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6483—Ladder SAW filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7209—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched from a first band to a second band

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
KR1020217041791A 2019-07-05 2020-06-25 탄성파 장치, 고주파 프론트 엔드 회로 및 통신 장치 Active KR102727105B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2019-126541 2019-07-05
JP2019126541 2019-07-05
PCT/JP2020/025014 WO2021006056A1 (ja) 2019-07-05 2020-06-25 弾性波装置、高周波フロントエンド回路及び通信装置

Publications (2)

Publication Number Publication Date
KR20220011693A KR20220011693A (ko) 2022-01-28
KR102727105B1 true KR102727105B1 (ko) 2024-11-06

Family

ID=74115170

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217041791A Active KR102727105B1 (ko) 2019-07-05 2020-06-25 탄성파 장치, 고주파 프론트 엔드 회로 및 통신 장치

Country Status (5)

Country Link
US (1) US20220123731A1 (https=)
JP (1) JP7510417B2 (https=)
KR (1) KR102727105B1 (https=)
CN (1) CN113924727B (https=)
WO (1) WO2021006056A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210068131A (ko) 2018-10-16 2021-06-08 도호쿠 다이가쿠 음향파 디바이스들

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015012005A1 (ja) * 2013-07-25 2015-01-29 日本碍子株式会社 複合基板及びその製法
WO2018070369A1 (ja) * 2016-10-11 2018-04-19 京セラ株式会社 弾性波装置
WO2018097016A1 (ja) * 2016-11-25 2018-05-31 国立大学法人東北大学 弾性波デバイス
JP2019080313A (ja) * 2017-10-23 2019-05-23 コーボ ユーエス，インコーポレイティド 誘導ｓａｗデバイスのための水晶方位

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106209007B (zh) * 2010-12-24 2019-07-05 株式会社村田制作所 弹性波装置
JP5856408B2 (ja) * 2011-08-22 2016-02-09 太陽誘電株式会社 弾性波デバイスおよびモジュール
US20180048283A1 (en) * 2015-04-16 2018-02-15 Shin-Etsu Chemical Co., Ltd. Lithium tantalate single crystal substrate, bonded substrate, manufacturing method of the bonded substrate, and surface acoustic wave device using the bonded substrate
US10084427B2 (en) * 2016-01-28 2018-09-25 Qorvo Us, Inc. Surface acoustic wave device having a piezoelectric layer on a quartz substrate and methods of manufacturing thereof
KR102194752B1 (ko) 2016-09-02 2020-12-23 가부시키가이샤 무라타 세이사쿠쇼 탄성파 필터 장치, 고주파 프론트엔드 회로 및 통신 장치
US10924085B2 (en) 2016-10-17 2021-02-16 Qorvo Us, Inc. Guided acoustic wave device
JP2019036963A (ja) * 2017-08-18 2019-03-07 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. キャリアアグリゲーションシステム用の弾性表面波デバイスを備えたフィルタ
WO2019065666A1 (ja) * 2017-09-27 2019-04-04 株式会社村田製作所 弾性波装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015012005A1 (ja) * 2013-07-25 2015-01-29 日本碍子株式会社 複合基板及びその製法
WO2018070369A1 (ja) * 2016-10-11 2018-04-19 京セラ株式会社 弾性波装置
WO2018097016A1 (ja) * 2016-11-25 2018-05-31 国立大学法人東北大学 弾性波デバイス
JP2019080313A (ja) * 2017-10-23 2019-05-23 コーボ ユーエス，インコーポレイティド 誘導ｓａｗデバイスのための水晶方位

Also Published As

Publication number Publication date
CN113924727B (zh) 2025-08-22
US20220123731A1 (en) 2022-04-21
CN113924727A (zh) 2022-01-11
KR20220011693A (ko) 2022-01-28
JP7510417B2 (ja) 2024-07-03
WO2021006056A1 (ja) 2021-01-14
JPWO2021006056A1 (https=) 2021-01-14

Similar Documents

Publication Publication Date Title
JP6791403B2 (ja) マルチプレクサ、高周波フロントエンド回路および通信装置
JP6954378B2 (ja) 弾性波装置、マルチプレクサ、高周波フロントエンド回路及び通信装置
CN111587534B (zh) 弹性波装置、多工器、高频前端电路以及通信装置
JP6590069B2 (ja) マルチプレクサ、高周波フロントエンド回路及び通信装置
CN111602337B (zh) 弹性波装置、多工器、高频前端电路及通信装置
JP6645626B2 (ja) マルチプレクサ、高周波フロントエンド回路および通信装置
WO2018216417A1 (ja) 弾性波装置、フィルタ、高周波フロントエンド回路及び通信装置
CN110114977B (zh) 多工器、高频前端电路以及通信装置
WO2018092511A1 (ja) 弾性表面波フィルタおよびマルチプレクサ
WO2018003296A1 (ja) マルチプレクサ、高周波フロントエンド回路及び通信装置
KR20190099065A (ko) 탄성파 장치, 고주파 프론트 엔드 회로 및 통신 장치
KR102727105B1 (ko) 탄성파 장치, 고주파 프론트 엔드 회로 및 통신 장치
KR102749040B1 (ko) 탄성파 장치, 고주파 프론트 엔드 회로 및 통신 장치

Legal Events

Date Code Title Description
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601