CN113924727B - 弹性波装置、高频前端电路以及通信装置 - Google Patents

弹性波装置、高频前端电路以及通信装置

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Publication number
CN113924727B
CN113924727B CN202080042315.6A CN202080042315A CN113924727B CN 113924727 B CN113924727 B CN 113924727B CN 202080042315 A CN202080042315 A CN 202080042315A CN 113924727 B CN113924727 B CN 113924727B
Authority
CN
China
Prior art keywords
piezoelectric layer
elastic wave
wave device
support substrate
filter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080042315.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN113924727A (zh
Inventor
岩本英树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of CN113924727A publication Critical patent/CN113924727A/zh
Application granted granted Critical
Publication of CN113924727B publication Critical patent/CN113924727B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/566—Electric coupling means therefor
    • H03H9/568—Electric coupling means therefor consisting of a ladder configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02551—Characteristics of substrate, e.g. cutting angles of quartz substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H03H9/14541—Multilayer finger or busbar electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6483—Ladder SAW filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7209—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched from a first band to a second band

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
CN202080042315.6A 2019-07-05 2020-06-25 弹性波装置、高频前端电路以及通信装置 Active CN113924727B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-126541 2019-07-05
JP2019126541 2019-07-05
PCT/JP2020/025014 WO2021006056A1 (ja) 2019-07-05 2020-06-25 弾性波装置、高周波フロントエンド回路及び通信装置

Publications (2)

Publication Number Publication Date
CN113924727A CN113924727A (zh) 2022-01-11
CN113924727B true CN113924727B (zh) 2025-08-22

Family

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CN202080042315.6A Active CN113924727B (zh) 2019-07-05 2020-06-25 弹性波装置、高频前端电路以及通信装置

Country Status (5)

Country Link
US (1) US20220123731A1 (https=)
JP (1) JP7510417B2 (https=)
KR (1) KR102727105B1 (https=)
CN (1) CN113924727B (https=)
WO (1) WO2021006056A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210068131A (ko) 2018-10-16 2021-06-08 도호쿠 다이가쿠 음향파 디바이스들

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105409119A (zh) * 2013-07-25 2016-03-16 日本碍子株式会社 复合基板及其制造方法
WO2018070369A1 (ja) * 2016-10-11 2018-04-19 京セラ株式会社 弾性波装置
WO2018097016A1 (ja) * 2016-11-25 2018-05-31 国立大学法人東北大学 弾性波デバイス

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106209007B (zh) * 2010-12-24 2019-07-05 株式会社村田制作所 弹性波装置
JP5856408B2 (ja) * 2011-08-22 2016-02-09 太陽誘電株式会社 弾性波デバイスおよびモジュール
US20180048283A1 (en) * 2015-04-16 2018-02-15 Shin-Etsu Chemical Co., Ltd. Lithium tantalate single crystal substrate, bonded substrate, manufacturing method of the bonded substrate, and surface acoustic wave device using the bonded substrate
US10084427B2 (en) * 2016-01-28 2018-09-25 Qorvo Us, Inc. Surface acoustic wave device having a piezoelectric layer on a quartz substrate and methods of manufacturing thereof
KR102194752B1 (ko) 2016-09-02 2020-12-23 가부시키가이샤 무라타 세이사쿠쇼 탄성파 필터 장치, 고주파 프론트엔드 회로 및 통신 장치
US10924085B2 (en) 2016-10-17 2021-02-16 Qorvo Us, Inc. Guided acoustic wave device
JP2019036963A (ja) * 2017-08-18 2019-03-07 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. キャリアアグリゲーションシステム用の弾性表面波デバイスを備えたフィルタ
WO2019065666A1 (ja) * 2017-09-27 2019-04-04 株式会社村田製作所 弾性波装置
US11206007B2 (en) * 2017-10-23 2021-12-21 Qorvo Us, Inc. Quartz orientation for guided SAW devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105409119A (zh) * 2013-07-25 2016-03-16 日本碍子株式会社 复合基板及其制造方法
WO2018070369A1 (ja) * 2016-10-11 2018-04-19 京セラ株式会社 弾性波装置
WO2018097016A1 (ja) * 2016-11-25 2018-05-31 国立大学法人東北大学 弾性波デバイス

Also Published As

Publication number Publication date
US20220123731A1 (en) 2022-04-21
KR102727105B1 (ko) 2024-11-06
CN113924727A (zh) 2022-01-11
KR20220011693A (ko) 2022-01-28
JP7510417B2 (ja) 2024-07-03
WO2021006056A1 (ja) 2021-01-14
JPWO2021006056A1 (https=) 2021-01-14

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