JP7510417B2 - 弾性波装置、高周波フロントエンド回路及び通信装置 - Google Patents

弾性波装置、高周波フロントエンド回路及び通信装置 Download PDF

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Publication number
JP7510417B2
JP7510417B2 JP2021530594A JP2021530594A JP7510417B2 JP 7510417 B2 JP7510417 B2 JP 7510417B2 JP 2021530594 A JP2021530594 A JP 2021530594A JP 2021530594 A JP2021530594 A JP 2021530594A JP 7510417 B2 JP7510417 B2 JP 7510417B2
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Prior art keywords
piezoelectric layer
wave device
support substrate
elastic wave
filter
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Japanese (ja)
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JPWO2021006056A5 (https=
JPWO2021006056A1 (https=
Inventor
英樹 岩本
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/566—Electric coupling means therefor
    • H03H9/568—Electric coupling means therefor consisting of a ladder configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02551—Characteristics of substrate, e.g. cutting angles of quartz substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H03H9/14541—Multilayer finger or busbar electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6483—Ladder SAW filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7209—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched from a first band to a second band

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
JP2021530594A 2019-07-05 2020-06-25 弾性波装置、高周波フロントエンド回路及び通信装置 Active JP7510417B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019126541 2019-07-05
JP2019126541 2019-07-05
PCT/JP2020/025014 WO2021006056A1 (ja) 2019-07-05 2020-06-25 弾性波装置、高周波フロントエンド回路及び通信装置

Publications (3)

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JPWO2021006056A1 JPWO2021006056A1 (https=) 2021-01-14
JPWO2021006056A5 JPWO2021006056A5 (https=) 2022-03-17
JP7510417B2 true JP7510417B2 (ja) 2024-07-03

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Country Link
US (1) US20220123731A1 (https=)
JP (1) JP7510417B2 (https=)
KR (1) KR102727105B1 (https=)
CN (1) CN113924727B (https=)
WO (1) WO2021006056A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210068131A (ko) 2018-10-16 2021-06-08 도호쿠 다이가쿠 음향파 디바이스들

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015012005A1 (ja) 2013-07-25 2015-01-29 日本碍子株式会社 複合基板及びその製法
WO2018043610A1 (ja) 2016-09-02 2018-03-08 株式会社村田製作所 弾性波フィルタ装置、高周波フロントエンド回路及び通信装置
WO2018070369A1 (ja) 2016-10-11 2018-04-19 京セラ株式会社 弾性波装置
WO2018097016A1 (ja) 2016-11-25 2018-05-31 国立大学法人東北大学 弾性波デバイス

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106209007B (zh) * 2010-12-24 2019-07-05 株式会社村田制作所 弹性波装置
JP5856408B2 (ja) * 2011-08-22 2016-02-09 太陽誘電株式会社 弾性波デバイスおよびモジュール
US20180048283A1 (en) * 2015-04-16 2018-02-15 Shin-Etsu Chemical Co., Ltd. Lithium tantalate single crystal substrate, bonded substrate, manufacturing method of the bonded substrate, and surface acoustic wave device using the bonded substrate
US10084427B2 (en) * 2016-01-28 2018-09-25 Qorvo Us, Inc. Surface acoustic wave device having a piezoelectric layer on a quartz substrate and methods of manufacturing thereof
US10924085B2 (en) 2016-10-17 2021-02-16 Qorvo Us, Inc. Guided acoustic wave device
JP2019036963A (ja) * 2017-08-18 2019-03-07 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. キャリアアグリゲーションシステム用の弾性表面波デバイスを備えたフィルタ
WO2019065666A1 (ja) * 2017-09-27 2019-04-04 株式会社村田製作所 弾性波装置
US11206007B2 (en) * 2017-10-23 2021-12-21 Qorvo Us, Inc. Quartz orientation for guided SAW devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015012005A1 (ja) 2013-07-25 2015-01-29 日本碍子株式会社 複合基板及びその製法
WO2018043610A1 (ja) 2016-09-02 2018-03-08 株式会社村田製作所 弾性波フィルタ装置、高周波フロントエンド回路及び通信装置
WO2018070369A1 (ja) 2016-10-11 2018-04-19 京セラ株式会社 弾性波装置
WO2018097016A1 (ja) 2016-11-25 2018-05-31 国立大学法人東北大学 弾性波デバイス

Also Published As

Publication number Publication date
CN113924727B (zh) 2025-08-22
US20220123731A1 (en) 2022-04-21
KR102727105B1 (ko) 2024-11-06
CN113924727A (zh) 2022-01-11
KR20220011693A (ko) 2022-01-28
WO2021006056A1 (ja) 2021-01-14
JPWO2021006056A1 (https=) 2021-01-14

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