KR102720076B1 - 얼라인먼트 장치, 얼라인먼트 방법, 리소그래피 장치, 및 물품의 제조방법 - Google Patents

얼라인먼트 장치, 얼라인먼트 방법, 리소그래피 장치, 및 물품의 제조방법 Download PDF

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KR102720076B1
KR102720076B1 KR1020200063962A KR20200063962A KR102720076B1 KR 102720076 B1 KR102720076 B1 KR 102720076B1 KR 1020200063962 A KR1020200063962 A KR 1020200063962A KR 20200063962 A KR20200063962 A KR 20200063962A KR 102720076 B1 KR102720076 B1 KR 102720076B1
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South Korea
Prior art keywords
substrate
tilt
distance
alignment
acquisition unit
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KR20200140714A (ko
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신이치 에가시라
겐키 무라야마
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7011—Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7092—Signal processing
    • H01L21/682—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/57—Mask-wafer alignment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
KR1020200063962A 2019-06-07 2020-05-28 얼라인먼트 장치, 얼라인먼트 방법, 리소그래피 장치, 및 물품의 제조방법 Active KR102720076B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019106854A JP7317579B2 (ja) 2019-06-07 2019-06-07 位置合わせ装置、位置合わせ方法、リソグラフィ装置、および、物品の製造方法
JPJP-P-2019-106854 2019-06-07

Publications (2)

Publication Number Publication Date
KR20200140714A KR20200140714A (ko) 2020-12-16
KR102720076B1 true KR102720076B1 (ko) 2024-10-22

Family

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KR1020200063962A Active KR102720076B1 (ko) 2019-06-07 2020-05-28 얼라인먼트 장치, 얼라인먼트 방법, 리소그래피 장치, 및 물품의 제조방법

Country Status (5)

Country Link
US (1) US11360401B2 (https=)
EP (1) EP3751347B1 (https=)
JP (1) JP7317579B2 (https=)
KR (1) KR102720076B1 (https=)
TW (1) TWI824145B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022131602A (ja) * 2021-02-26 2022-09-07 キヤノン株式会社 検出装置、検出方法、プログラム、リソグラフィ装置、および物品製造方法
KR102541500B1 (ko) * 2022-11-14 2023-06-13 (주)오로스테크놀로지 상관관계 기반 오버레이 키 센터링 시스템 및 그 방법
CN116107177A (zh) * 2022-12-29 2023-05-12 中国科学院光电技术研究所 标记对准方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216077A (ja) * 1999-01-22 2000-08-04 Nec Corp 重ね合わせ精度測定装置の焦点位置調整方法及び調整装置
JP2006216796A (ja) 2005-02-03 2006-08-17 Nikon Corp 基準パターン情報の作成方法、位置計測方法、位置計測装置、露光方法、及び露光装置
US20080142681A1 (en) 2006-12-19 2008-06-19 Hideo Takizawa Focus control method
JP2010161280A (ja) * 2009-01-09 2010-07-22 Canon Inc 露光装置及びデバイス製造方法
JP2010183028A (ja) * 2009-02-09 2010-08-19 Dainippon Screen Mfg Co Ltd パターン描画装置およびパターン描画方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6522776B1 (en) 1999-08-17 2003-02-18 Advanced Micro Devices, Inc. Method for automated determination of reticle tilt in a lithographic system
JP4165871B2 (ja) 2002-03-15 2008-10-15 キヤノン株式会社 位置検出方法、位置検出装置及び露光装置
JP4618691B2 (ja) 2005-02-03 2011-01-26 富士通株式会社 マーク画像処理方法、プログラム及び装置
NL1036476A1 (nl) * 2008-02-01 2009-08-04 Asml Netherlands Bv Alignment mark and a method of aligning a substrate comprising such an alignment mark.
JP5525421B2 (ja) 2010-11-24 2014-06-18 株式会社日立ハイテクノロジーズ 画像撮像装置および画像撮像方法
JP6003272B2 (ja) 2012-06-15 2016-10-05 富士通セミコンダクター株式会社 露光方法および露光装置
JP6767811B2 (ja) * 2016-08-31 2020-10-14 キヤノン株式会社 位置検出方法、位置検出装置、リソグラフィ装置および物品製造方法
JP6525095B1 (ja) 2017-07-21 2019-06-05 株式会社デンソー 回転電機
US10585360B2 (en) * 2017-08-25 2020-03-10 Applied Materials, Inc. Exposure system alignment and calibration method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216077A (ja) * 1999-01-22 2000-08-04 Nec Corp 重ね合わせ精度測定装置の焦点位置調整方法及び調整装置
JP2006216796A (ja) 2005-02-03 2006-08-17 Nikon Corp 基準パターン情報の作成方法、位置計測方法、位置計測装置、露光方法、及び露光装置
US20080142681A1 (en) 2006-12-19 2008-06-19 Hideo Takizawa Focus control method
JP2008152065A (ja) 2006-12-19 2008-07-03 Lasertec Corp フォーカス制御方法
JP2010161280A (ja) * 2009-01-09 2010-07-22 Canon Inc 露光装置及びデバイス製造方法
JP2010183028A (ja) * 2009-02-09 2010-08-19 Dainippon Screen Mfg Co Ltd パターン描画装置およびパターン描画方法

Also Published As

Publication number Publication date
EP3751347A1 (en) 2020-12-16
TWI824145B (zh) 2023-12-01
JP7317579B2 (ja) 2023-07-31
US20200387075A1 (en) 2020-12-10
US11360401B2 (en) 2022-06-14
JP2020201336A (ja) 2020-12-17
KR20200140714A (ko) 2020-12-16
TW202046008A (zh) 2020-12-16
EP3751347B1 (en) 2023-07-12

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