KR102714343B1 - 도가니 - Google Patents
도가니 Download PDFInfo
- Publication number
- KR102714343B1 KR102714343B1 KR1020187022422A KR20187022422A KR102714343B1 KR 102714343 B1 KR102714343 B1 KR 102714343B1 KR 1020187022422 A KR1020187022422 A KR 1020187022422A KR 20187022422 A KR20187022422 A KR 20187022422A KR 102714343 B1 KR102714343 B1 KR 102714343B1
- Authority
- KR
- South Korea
- Prior art keywords
- crucible
- barrier layer
- layer
- carbon
- tantalum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 claims abstract description 108
- 230000004888 barrier function Effects 0.000 claims abstract description 106
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 56
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 34
- 239000011733 molybdenum Substances 0.000 claims abstract description 33
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 27
- 239000001301 oxygen Substances 0.000 claims abstract description 27
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 19
- 239000010937 tungsten Substances 0.000 claims abstract description 18
- 239000007769 metal material Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 35
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 32
- 229910052715 tantalum Inorganic materials 0.000 claims description 31
- 239000007789 gas Substances 0.000 claims description 24
- 239000011265 semifinished product Substances 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 239000000843 powder Substances 0.000 claims description 20
- 239000003870 refractory metal Substances 0.000 claims description 11
- 238000003825 pressing Methods 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 135
- 238000009792 diffusion process Methods 0.000 description 20
- 229910003468 tantalcarbide Inorganic materials 0.000 description 15
- 238000005507 spraying Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 239000010955 niobium Substances 0.000 description 7
- 229910052758 niobium Inorganic materials 0.000 description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 7
- 239000002002 slurry Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 150000001247 metal acetylides Chemical class 0.000 description 5
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000007751 thermal spraying Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000010290 vacuum plasma spraying Methods 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910001362 Ta alloys Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- NCUIHVUMEAKBHH-UHFFFAOYSA-N [Mo+4].[O-2].[La+3] Chemical compound [Mo+4].[O-2].[La+3] NCUIHVUMEAKBHH-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 230000004792 oxidative damage Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Furnace Housings, Linings, Walls, And Ceilings (AREA)
- Powder Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ATGM22/2016U AT15378U1 (de) | 2016-02-05 | 2016-02-05 | Tiegel |
| ATGM22/2016 | 2016-02-05 | ||
| PCT/AT2017/000004 WO2017132711A1 (de) | 2016-02-05 | 2017-01-26 | Tiegel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20180113519A KR20180113519A (ko) | 2018-10-16 |
| KR102714343B1 true KR102714343B1 (ko) | 2024-10-07 |
Family
ID=58501228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187022422A Active KR102714343B1 (ko) | 2016-02-05 | 2017-01-26 | 도가니 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10844518B2 (enExample) |
| EP (1) | EP3411516B1 (enExample) |
| JP (1) | JP7185528B2 (enExample) |
| KR (1) | KR102714343B1 (enExample) |
| CN (1) | CN108884591B (enExample) |
| AT (1) | AT15378U1 (enExample) |
| WO (1) | WO2017132711A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114752814B (zh) * | 2022-04-08 | 2023-10-20 | 包头稀土研究院 | 重稀土锌合金及其制造方法和用途以及含钨容器的用途 |
| CN114657420B (zh) * | 2022-04-08 | 2023-10-20 | 包头稀土研究院 | 轻稀土-锌合金及其制备方法和用途及熔炼容器的用途 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202011185U (zh) * | 2011-03-17 | 2011-10-19 | 北京有色金属研究总院 | 用于处理铝和铝合金熔体的双金属层结构容器 |
| JP2012107782A (ja) * | 2010-11-15 | 2012-06-07 | Toshiba Corp | ルツボおよびそれを用いたサファイア単結晶の製造方法並びにルツボの製造方法 |
| CN104911707A (zh) * | 2015-04-01 | 2015-09-16 | 江苏中电振华晶体技术有限公司 | 一种用于蓝宝石晶体生长的支承平台 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1213781A (en) * | 1916-02-21 | 1917-01-23 | Keuffel & Esser Co | Guard for draftsmen's scales. |
| SU1213781A1 (ru) * | 1984-07-13 | 1991-04-23 | Предприятие П/Я Х-5476 | Устройство дл выращивани монокристаллических лент сапфира |
| JPH0811824B2 (ja) * | 1992-07-13 | 1996-02-07 | 東京タングステン株式会社 | ルツボ及びその製造方法 |
| WO2008057710A2 (en) * | 2006-11-07 | 2008-05-15 | H.C. Starck Gmbh | Method for coating a substrate and coated product |
| JP5546880B2 (ja) * | 2009-03-25 | 2014-07-09 | 山陽特殊製鋼株式会社 | モリブデン合金 |
| US20120291699A1 (en) * | 2011-02-11 | 2012-11-22 | Matthew Fonte | Crucibles made with the cold form process |
| CN104066873A (zh) * | 2011-09-09 | 2014-09-24 | 英诺文特科技公司 | 带涂层坩埚和制造带涂层坩埚的方法 |
| JP2013060348A (ja) * | 2011-09-14 | 2013-04-04 | Toshiba Corp | ルツボおよびそれを用いたサファイア単結晶の製造方法 |
| JP2013155050A (ja) * | 2012-01-26 | 2013-08-15 | Takayuki Shimamune | 被覆金属加工体及びその製造方法 |
| JP2014091670A (ja) * | 2012-11-06 | 2014-05-19 | Shin Etsu Handotai Co Ltd | 単結晶製造装置 |
| KR20150131044A (ko) * | 2013-03-13 | 2015-11-24 | 어드밴스드 리뉴어블에너지 컴파니 엘엘씨 | 흑연 핫 구역에 사용하기 위한 부품을 사용하는 노 |
| WO2015002148A1 (ja) * | 2013-07-03 | 2015-01-08 | 株式会社フルヤ金属 | 容器及び金属元素の回収方法 |
| EP2902534A1 (en) * | 2014-02-04 | 2015-08-05 | SGL Carbon SE | Metal coated crucible for sapphire single crystal growth |
| EP2947054B1 (de) | 2014-05-22 | 2017-01-11 | Heraeus Quarzglas GmbH & Co. KG | Bauteil, insbesondere für den einsatz in einem tiegelziehverfahren für quarzglas und verfahren zur herstellung eines derartigen bauteils |
-
2016
- 2016-02-05 AT ATGM22/2016U patent/AT15378U1/de not_active IP Right Cessation
-
2017
- 2017-01-26 CN CN201780009775.7A patent/CN108884591B/zh active Active
- 2017-01-26 JP JP2018540828A patent/JP7185528B2/ja active Active
- 2017-01-26 EP EP17706661.0A patent/EP3411516B1/de active Active
- 2017-01-26 KR KR1020187022422A patent/KR102714343B1/ko active Active
- 2017-01-26 WO PCT/AT2017/000004 patent/WO2017132711A1/de not_active Ceased
- 2017-01-26 US US16/073,184 patent/US10844518B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012107782A (ja) * | 2010-11-15 | 2012-06-07 | Toshiba Corp | ルツボおよびそれを用いたサファイア単結晶の製造方法並びにルツボの製造方法 |
| CN202011185U (zh) * | 2011-03-17 | 2011-10-19 | 北京有色金属研究总院 | 用于处理铝和铝合金熔体的双金属层结构容器 |
| CN104911707A (zh) * | 2015-04-01 | 2015-09-16 | 江苏中电振华晶体技术有限公司 | 一种用于蓝宝石晶体生长的支承平台 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017132711A1 (de) | 2017-08-10 |
| AT15378U1 (de) | 2017-07-15 |
| CN108884591B (zh) | 2021-04-02 |
| US10844518B2 (en) | 2020-11-24 |
| EP3411516A1 (de) | 2018-12-12 |
| CN108884591A (zh) | 2018-11-23 |
| JP2019510185A (ja) | 2019-04-11 |
| JP7185528B2 (ja) | 2022-12-07 |
| EP3411516B1 (de) | 2019-11-13 |
| KR20180113519A (ko) | 2018-10-16 |
| US20190024260A1 (en) | 2019-01-24 |
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Legal Events
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Patent event date: 20180803 Patent event code: PA01051R01D Comment text: International Patent Application |
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| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20220112 Comment text: Request for Examination of Application |
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Comment text: Notification of reason for refusal Patent event date: 20231121 Patent event code: PE09021S01D |
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| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20240919 |
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| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20241002 Patent event code: PR07011E01D |
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| PR1002 | Payment of registration fee |
Payment date: 20241002 End annual number: 3 Start annual number: 1 |
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