AT15378U1 - Tiegel - Google Patents
Tiegel Download PDFInfo
- Publication number
- AT15378U1 AT15378U1 ATGM22/2016U AT222016U AT15378U1 AT 15378 U1 AT15378 U1 AT 15378U1 AT 222016 U AT222016 U AT 222016U AT 15378 U1 AT15378 U1 AT 15378U1
- Authority
- AT
- Austria
- Prior art keywords
- crucible
- barrier layer
- layer
- base material
- carbon
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 claims abstract description 113
- 239000000463 material Substances 0.000 claims abstract description 105
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 53
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 35
- 239000011733 molybdenum Substances 0.000 claims abstract description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000001301 oxygen Substances 0.000 claims abstract description 26
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 26
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 21
- 239000010937 tungsten Substances 0.000 claims abstract description 20
- 239000007769 metal material Substances 0.000 claims abstract description 13
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 32
- 229910052715 tantalum Inorganic materials 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 28
- 239000007789 gas Substances 0.000 claims description 23
- 239000000843 powder Substances 0.000 claims description 22
- 238000005507 spraying Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
- 229910052758 niobium Inorganic materials 0.000 claims description 11
- 239000010955 niobium Substances 0.000 claims description 11
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 11
- 239000003870 refractory metal Substances 0.000 claims description 10
- 238000003825 pressing Methods 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 8
- 239000002002 slurry Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 238000007751 thermal spraying Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 136
- 238000009792 diffusion process Methods 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 10
- 229910003468 tantalcarbide Inorganic materials 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910001362 Ta alloys Inorganic materials 0.000 description 4
- 150000001247 metal acetylides Chemical class 0.000 description 4
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000010290 vacuum plasma spraying Methods 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000005255 carburizing Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- 229910004448 Ta2C Inorganic materials 0.000 description 1
- NCUIHVUMEAKBHH-UHFFFAOYSA-N [Mo+4].[O-2].[La+3] Chemical compound [Mo+4].[O-2].[La+3] NCUIHVUMEAKBHH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 230000001488 breeding effect Effects 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000007857 degradation product Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000007613 slurry method Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- -1 tantalum carbides Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Furnace Housings, Linings, Walls, And Ceilings (AREA)
- Powder Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ATGM22/2016U AT15378U1 (de) | 2016-02-05 | 2016-02-05 | Tiegel |
| CN201780009775.7A CN108884591B (zh) | 2016-02-05 | 2017-01-26 | 坩埚 |
| PCT/AT2017/000004 WO2017132711A1 (de) | 2016-02-05 | 2017-01-26 | Tiegel |
| JP2018540828A JP7185528B2 (ja) | 2016-02-05 | 2017-01-26 | るつぼ |
| US16/073,184 US10844518B2 (en) | 2016-02-05 | 2017-01-26 | Crucible |
| EP17706661.0A EP3411516B1 (de) | 2016-02-05 | 2017-01-26 | Tiegel |
| KR1020187022422A KR102714343B1 (ko) | 2016-02-05 | 2017-01-26 | 도가니 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ATGM22/2016U AT15378U1 (de) | 2016-02-05 | 2016-02-05 | Tiegel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT15378U1 true AT15378U1 (de) | 2017-07-15 |
Family
ID=58501228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ATGM22/2016U AT15378U1 (de) | 2016-02-05 | 2016-02-05 | Tiegel |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10844518B2 (enExample) |
| EP (1) | EP3411516B1 (enExample) |
| JP (1) | JP7185528B2 (enExample) |
| KR (1) | KR102714343B1 (enExample) |
| CN (1) | CN108884591B (enExample) |
| AT (1) | AT15378U1 (enExample) |
| WO (1) | WO2017132711A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114657420B (zh) * | 2022-04-08 | 2023-10-20 | 包头稀土研究院 | 轻稀土-锌合金及其制备方法和用途及熔炼容器的用途 |
| CN114752814B (zh) * | 2022-04-08 | 2023-10-20 | 包头稀土研究院 | 重稀土锌合金及其制造方法和用途以及含钨容器的用途 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010248615A (ja) * | 2009-03-25 | 2010-11-04 | Sanyo Special Steel Co Ltd | モリブデン合金およびその製造方法 |
| JP2012107782A (ja) * | 2010-11-15 | 2012-06-07 | Toshiba Corp | ルツボおよびそれを用いたサファイア単結晶の製造方法並びにルツボの製造方法 |
| JP2013060348A (ja) * | 2011-09-14 | 2013-04-04 | Toshiba Corp | ルツボおよびそれを用いたサファイア単結晶の製造方法 |
| EP2902534A1 (en) * | 2014-02-04 | 2015-08-05 | SGL Carbon SE | Metal coated crucible for sapphire single crystal growth |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1213781A (en) * | 1916-02-21 | 1917-01-23 | Keuffel & Esser Co | Guard for draftsmen's scales. |
| SU1213781A1 (ru) * | 1984-07-13 | 1991-04-23 | Предприятие П/Я Х-5476 | Устройство дл выращивани монокристаллических лент сапфира |
| JPH0811824B2 (ja) * | 1992-07-13 | 1996-02-07 | 東京タングステン株式会社 | ルツボ及びその製造方法 |
| CA2669052C (en) * | 2006-11-07 | 2013-11-26 | Stefan Zimmermann | Method for coating a substrate and coated product |
| US20120291699A1 (en) * | 2011-02-11 | 2012-11-22 | Matthew Fonte | Crucibles made with the cold form process |
| CN202011185U (zh) * | 2011-03-17 | 2011-10-19 | 北京有色金属研究总院 | 用于处理铝和铝合金熔体的双金属层结构容器 |
| WO2013066495A1 (en) * | 2011-09-09 | 2013-05-10 | Innovent Technologies | Coated crucible and method of making a coated crucible |
| JP2013155050A (ja) | 2012-01-26 | 2013-08-15 | Takayuki Shimamune | 被覆金属加工体及びその製造方法 |
| JP2014091670A (ja) | 2012-11-06 | 2014-05-19 | Shin Etsu Handotai Co Ltd | 単結晶製造装置 |
| CN105189833A (zh) | 2013-03-13 | 2015-12-23 | 先进可再生能源有限公司 | 使用用于石墨热区的部件的锅炉 |
| WO2015002148A1 (ja) * | 2013-07-03 | 2015-01-08 | 株式会社フルヤ金属 | 容器及び金属元素の回収方法 |
| EP2947054B1 (de) | 2014-05-22 | 2017-01-11 | Heraeus Quarzglas GmbH & Co. KG | Bauteil, insbesondere für den einsatz in einem tiegelziehverfahren für quarzglas und verfahren zur herstellung eines derartigen bauteils |
| CN104911707A (zh) * | 2015-04-01 | 2015-09-16 | 江苏中电振华晶体技术有限公司 | 一种用于蓝宝石晶体生长的支承平台 |
-
2016
- 2016-02-05 AT ATGM22/2016U patent/AT15378U1/de not_active IP Right Cessation
-
2017
- 2017-01-26 US US16/073,184 patent/US10844518B2/en active Active
- 2017-01-26 CN CN201780009775.7A patent/CN108884591B/zh active Active
- 2017-01-26 WO PCT/AT2017/000004 patent/WO2017132711A1/de not_active Ceased
- 2017-01-26 JP JP2018540828A patent/JP7185528B2/ja active Active
- 2017-01-26 KR KR1020187022422A patent/KR102714343B1/ko active Active
- 2017-01-26 EP EP17706661.0A patent/EP3411516B1/de active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010248615A (ja) * | 2009-03-25 | 2010-11-04 | Sanyo Special Steel Co Ltd | モリブデン合金およびその製造方法 |
| JP2012107782A (ja) * | 2010-11-15 | 2012-06-07 | Toshiba Corp | ルツボおよびそれを用いたサファイア単結晶の製造方法並びにルツボの製造方法 |
| JP2013060348A (ja) * | 2011-09-14 | 2013-04-04 | Toshiba Corp | ルツボおよびそれを用いたサファイア単結晶の製造方法 |
| EP2902534A1 (en) * | 2014-02-04 | 2015-08-05 | SGL Carbon SE | Metal coated crucible for sapphire single crystal growth |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7185528B2 (ja) | 2022-12-07 |
| EP3411516A1 (de) | 2018-12-12 |
| CN108884591A (zh) | 2018-11-23 |
| KR20180113519A (ko) | 2018-10-16 |
| CN108884591B (zh) | 2021-04-02 |
| US10844518B2 (en) | 2020-11-24 |
| KR102714343B1 (ko) | 2024-10-07 |
| EP3411516B1 (de) | 2019-11-13 |
| JP2019510185A (ja) | 2019-04-11 |
| WO2017132711A1 (de) | 2017-08-10 |
| US20190024260A1 (en) | 2019-01-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM01 | Lapse because of not paying annual fees |
Effective date: 20210228 |