KR102623653B1 - 촬상 소자 및 촬상 장치 - Google Patents
촬상 소자 및 촬상 장치 Download PDFInfo
- Publication number
- KR102623653B1 KR102623653B1 KR1020237001097A KR20237001097A KR102623653B1 KR 102623653 B1 KR102623653 B1 KR 102623653B1 KR 1020237001097 A KR1020237001097 A KR 1020237001097A KR 20237001097 A KR20237001097 A KR 20237001097A KR 102623653 B1 KR102623653 B1 KR 102623653B1
- Authority
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- South Korea
- Prior art keywords
- light
- pixel
- photoelectric conversion
- imaging device
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- 238000003384 imaging method Methods 0.000 title claims abstract description 148
- 239000004065 semiconductor Substances 0.000 claims abstract description 124
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- 238000001514 detection method Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
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- 239000003990 capacitor Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
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- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000005570 vertical transmission Effects 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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Classifications
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- H01L27/14623—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H01L27/14603—
-
- H01L27/14627—
-
- H01L27/14636—
-
- H01L27/14643—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020247000327A KR20240010528A (ko) | 2015-09-30 | 2016-09-26 | 촬상 소자 및 촬상 장치 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2015-195347 | 2015-09-30 | ||
| JP2015195347 | 2015-09-30 | ||
| KR1020207036799A KR102488709B1 (ko) | 2015-09-30 | 2016-09-26 | 촬상 소자 및 촬상 장치 |
| PCT/JP2016/078278 WO2017057277A1 (ja) | 2015-09-30 | 2016-09-26 | 撮像素子および撮像装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020207036799A Division KR102488709B1 (ko) | 2015-09-30 | 2016-09-26 | 촬상 소자 및 촬상 장치 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247000327A Division KR20240010528A (ko) | 2015-09-30 | 2016-09-26 | 촬상 소자 및 촬상 장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20230009533A KR20230009533A (ko) | 2023-01-17 |
| KR102623653B1 true KR102623653B1 (ko) | 2024-01-10 |
Family
ID=58427557
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237001097A Active KR102623653B1 (ko) | 2015-09-30 | 2016-09-26 | 촬상 소자 및 촬상 장치 |
| KR1020207036799A Active KR102488709B1 (ko) | 2015-09-30 | 2016-09-26 | 촬상 소자 및 촬상 장치 |
| KR1020247000327A Ceased KR20240010528A (ko) | 2015-09-30 | 2016-09-26 | 촬상 소자 및 촬상 장치 |
| KR1020187009049A Ceased KR20180048900A (ko) | 2015-09-30 | 2016-09-26 | 촬상 소자 및 촬상 장치 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020207036799A Active KR102488709B1 (ko) | 2015-09-30 | 2016-09-26 | 촬상 소자 및 촬상 장치 |
| KR1020247000327A Ceased KR20240010528A (ko) | 2015-09-30 | 2016-09-26 | 촬상 소자 및 촬상 장치 |
| KR1020187009049A Ceased KR20180048900A (ko) | 2015-09-30 | 2016-09-26 | 촬상 소자 및 촬상 장치 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20180294300A1 (enExample) |
| EP (1) | EP3358620B1 (enExample) |
| JP (3) | JPWO2017057277A1 (enExample) |
| KR (4) | KR102623653B1 (enExample) |
| CN (2) | CN108174619B (enExample) |
| WO (1) | WO2017057277A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017126377A1 (ja) * | 2016-01-22 | 2017-07-27 | ソニー株式会社 | 受光装置、制御方法、及び、電子機器 |
| JP6700811B2 (ja) * | 2016-01-26 | 2020-05-27 | キヤノン株式会社 | 半導体装置および半導体装置の製造方法 |
| JP2018060980A (ja) * | 2016-10-07 | 2018-04-12 | キヤノン株式会社 | 撮像表示装置及びウェアラブルデバイス |
| EP3748956B1 (en) * | 2018-02-01 | 2023-09-27 | Sony Semiconductor Solutions Corporation | Solid-state imaging device and method for manufacturing same, and electronic apparatus |
| CN109033913A (zh) * | 2018-07-25 | 2018-12-18 | 维沃移动通信有限公司 | 一种识别码的识别方法及移动终端 |
| KR102681913B1 (ko) * | 2018-09-11 | 2024-07-05 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 고체 촬상 소자 |
| TWI866936B (zh) | 2018-11-21 | 2024-12-21 | 日商索尼半導體解決方案公司 | 固體攝像元件 |
| TWI861140B (zh) * | 2019-06-26 | 2024-11-11 | 日商索尼半導體解決方案公司 | 攝像裝置 |
| CN112018140A (zh) * | 2020-08-14 | 2020-12-01 | 清华大学 | 基于随机形状单元的微型光谱芯片 |
| JP2022086611A (ja) * | 2020-11-30 | 2022-06-09 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及びその製造方法 |
| KR20220144222A (ko) | 2021-04-19 | 2022-10-26 | 삼성전자주식회사 | 이미지 센서 |
| WO2024116633A1 (ja) * | 2022-11-30 | 2024-06-06 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011003860A (ja) | 2009-06-22 | 2011-01-06 | Sony Corp | 固体撮像装置とその製造方法、及び電子機器 |
| JP2015095468A (ja) | 2013-11-08 | 2015-05-18 | ソニー株式会社 | 固体撮像素子および固体撮像素子の製造方法、並びに電子機器 |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3799304A (en) | 1972-10-30 | 1974-03-26 | Twin Disc Inc | Hydraulic control system for power transmission having a modulated friction clutch |
| JPS5547260U (enExample) | 1978-09-26 | 1980-03-27 | ||
| JP2004304105A (ja) * | 2003-04-01 | 2004-10-28 | Matsushita Electric Ind Co Ltd | 固体撮像装置及びその製造方法 |
| JP4341421B2 (ja) * | 2004-02-04 | 2009-10-07 | ソニー株式会社 | 固体撮像装置 |
| JP2005303081A (ja) * | 2004-04-13 | 2005-10-27 | Matsushita Electric Ind Co Ltd | 光センサーおよび固体撮像装置 |
| JP2006344754A (ja) * | 2005-06-08 | 2006-12-21 | Matsushita Electric Ind Co Ltd | 固体撮像装置及びその製造方法 |
| JP2007201047A (ja) * | 2006-01-25 | 2007-08-09 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
| JP2008060195A (ja) * | 2006-08-30 | 2008-03-13 | Nikon Corp | 固体撮像装置およびその製造方法 |
| US7781715B2 (en) * | 2006-09-20 | 2010-08-24 | Fujifilm Corporation | Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device |
| JP4649390B2 (ja) * | 2006-09-20 | 2011-03-09 | 富士フイルム株式会社 | 裏面照射型撮像素子の製造方法 |
| JP5568880B2 (ja) * | 2008-04-03 | 2014-08-13 | ソニー株式会社 | 固体撮像装置、固体撮像装置の駆動方法および電子機器 |
| KR101776955B1 (ko) * | 2009-02-10 | 2017-09-08 | 소니 주식회사 | 고체 촬상 장치와 그 제조 방법, 및 전자 기기 |
| JP4798232B2 (ja) * | 2009-02-10 | 2011-10-19 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
| US9543356B2 (en) * | 2009-03-10 | 2017-01-10 | Globalfoundries Inc. | Pixel sensor cell including light shield |
| JP5513623B2 (ja) * | 2010-08-24 | 2014-06-04 | 富士フイルム株式会社 | 固体撮像装置 |
| JP2012156310A (ja) * | 2011-01-26 | 2012-08-16 | Sony Corp | 固体撮像素子、固体撮像素子の製造方法、および電子機器 |
| JP5810551B2 (ja) * | 2011-02-25 | 2015-11-11 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
| JP6299058B2 (ja) * | 2011-03-02 | 2018-03-28 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
| JP5794068B2 (ja) * | 2011-09-16 | 2015-10-14 | ソニー株式会社 | 固体撮像素子および製造方法、並びに電子機器 |
| JP2013098446A (ja) * | 2011-11-04 | 2013-05-20 | Sony Corp | 固体撮像素子、固体撮像素子の製造方法、及び、電子機器 |
| TW201334169A (zh) * | 2012-02-10 | 2013-08-16 | Sony Corp | 攝像元件、製造裝置及方法、及攝像裝置 |
| JP6065448B2 (ja) * | 2012-08-03 | 2017-01-25 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
| JP5547260B2 (ja) | 2012-10-22 | 2014-07-09 | 株式会社東芝 | 固体撮像装置 |
| JP2014096490A (ja) * | 2012-11-09 | 2014-05-22 | Sony Corp | 撮像素子、製造方法 |
| US8773562B1 (en) * | 2013-01-31 | 2014-07-08 | Apple Inc. | Vertically stacked image sensor |
| JP2015012126A (ja) * | 2013-06-28 | 2015-01-19 | ソニー株式会社 | 固体撮像素子および駆動方法、並びに電子機器 |
| US9356061B2 (en) * | 2013-08-05 | 2016-05-31 | Apple Inc. | Image sensor with buried light shield and vertical gate |
| US9305952B2 (en) * | 2013-08-27 | 2016-04-05 | Semiconductor Components Industries, Llc | Image sensors with inter-pixel light blocking structures |
| JP2015065270A (ja) * | 2013-09-25 | 2015-04-09 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
| JP6196911B2 (ja) * | 2014-02-05 | 2017-09-13 | オリンパス株式会社 | 固体撮像装置および撮像装置 |
| KR102154184B1 (ko) * | 2014-03-10 | 2020-09-09 | 삼성전자 주식회사 | 이미지 센서 및 이를 제조하는 방법 |
| KR102363433B1 (ko) * | 2015-01-15 | 2022-02-16 | 삼성전자주식회사 | 이미지 센서 |
| WO2017057278A1 (ja) * | 2015-09-30 | 2017-04-06 | 株式会社ニコン | 撮像素子および撮像装置 |
-
2016
- 2016-09-26 KR KR1020237001097A patent/KR102623653B1/ko active Active
- 2016-09-26 KR KR1020207036799A patent/KR102488709B1/ko active Active
- 2016-09-26 US US15/764,419 patent/US20180294300A1/en not_active Abandoned
- 2016-09-26 KR KR1020247000327A patent/KR20240010528A/ko not_active Ceased
- 2016-09-26 EP EP16851448.7A patent/EP3358620B1/en active Active
- 2016-09-26 CN CN201680057084.XA patent/CN108174619B/zh active Active
- 2016-09-26 JP JP2017543259A patent/JPWO2017057277A1/ja active Pending
- 2016-09-26 KR KR1020187009049A patent/KR20180048900A/ko not_active Ceased
- 2016-09-26 CN CN202211045472.XA patent/CN115295569A/zh active Pending
- 2016-09-26 WO PCT/JP2016/078278 patent/WO2017057277A1/ja not_active Ceased
-
2020
- 2020-11-25 JP JP2020195228A patent/JP7383597B2/ja active Active
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2021
- 2021-09-24 US US17/484,275 patent/US20220085220A1/en not_active Abandoned
-
2022
- 2022-11-16 JP JP2022183147A patent/JP2023017991A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011003860A (ja) | 2009-06-22 | 2011-01-06 | Sony Corp | 固体撮像装置とその製造方法、及び電子機器 |
| JP2015095468A (ja) | 2013-11-08 | 2015-05-18 | ソニー株式会社 | 固体撮像素子および固体撮像素子の製造方法、並びに電子機器 |
Also Published As
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| KR102488709B1 (ko) | 2023-01-13 |
| KR20200145850A (ko) | 2020-12-30 |
| CN108174619B (zh) | 2022-09-20 |
| KR20240010528A (ko) | 2024-01-23 |
| JP2023017991A (ja) | 2023-02-07 |
| EP3358620A4 (en) | 2019-04-24 |
| US20220085220A1 (en) | 2022-03-17 |
| CN108174619A (zh) | 2018-06-15 |
| EP3358620B1 (en) | 2025-08-20 |
| KR20180048900A (ko) | 2018-05-10 |
| KR20230009533A (ko) | 2023-01-17 |
| CN115295569A (zh) | 2022-11-04 |
| WO2017057277A1 (ja) | 2017-04-06 |
| JP2021044572A (ja) | 2021-03-18 |
| US20180294300A1 (en) | 2018-10-11 |
| EP3358620A1 (en) | 2018-08-08 |
| JPWO2017057277A1 (ja) | 2018-07-26 |
| JP7383597B2 (ja) | 2023-11-20 |
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