KR102622515B1 - 기판 처리 장치 - Google Patents
기판 처리 장치 Download PDFInfo
- Publication number
- KR102622515B1 KR102622515B1 KR1020210131563A KR20210131563A KR102622515B1 KR 102622515 B1 KR102622515 B1 KR 102622515B1 KR 1020210131563 A KR1020210131563 A KR 1020210131563A KR 20210131563 A KR20210131563 A KR 20210131563A KR 102622515 B1 KR102622515 B1 KR 102622515B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- processing
- processing liquid
- supply pipe
- discharge port
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 317
- 239000000758 substrate Substances 0.000 title claims abstract description 313
- 239000007788 liquid Substances 0.000 claims abstract description 220
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000007599 discharging Methods 0.000 claims abstract description 3
- 238000005192 partition Methods 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 8
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229920002530 polyetherether ketone Polymers 0.000 claims description 7
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 7
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 7
- 239000004813 Perfluoroalkoxy alkane Substances 0.000 claims description 6
- 229920011301 perfluoro alkoxyl alkane Polymers 0.000 claims description 6
- -1 polytetrafluoroethylene Polymers 0.000 claims description 4
- 230000008569 process Effects 0.000 abstract description 14
- 239000007789 gas Substances 0.000 description 87
- 239000000126 substance Substances 0.000 description 43
- 230000007246 mechanism Effects 0.000 description 20
- 238000003860 storage Methods 0.000 description 18
- 230000007723 transport mechanism Effects 0.000 description 16
- 239000012530 fluid Substances 0.000 description 14
- 239000000725 suspension Substances 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 229910001873 dinitrogen Inorganic materials 0.000 description 12
- 238000012993 chemical processing Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000000630 rising effect Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000011084 recovery Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 238000005553 drilling Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 206010034719 Personality change Diseases 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Polarising Elements (AREA)
- Manufacturing Of Printed Wiring (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2020-171104 | 2020-10-09 | ||
JP2020171104A JP7461269B2 (ja) | 2020-10-09 | 2020-10-09 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20220047514A KR20220047514A (ko) | 2022-04-18 |
KR102622515B1 true KR102622515B1 (ko) | 2024-01-08 |
Family
ID=81045340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020210131563A KR102622515B1 (ko) | 2020-10-09 | 2021-10-05 | 기판 처리 장치 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7461269B2 (zh) |
KR (1) | KR102622515B1 (zh) |
CN (1) | CN114334716A (zh) |
TW (1) | TWI803011B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI840080B (zh) * | 2023-01-07 | 2024-04-21 | 映利科技股份有限公司 | 印刷電路板濕式製程裝置以及方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020047885A (ja) | 2018-09-21 | 2020-03-26 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP2020136679A (ja) * | 2019-02-20 | 2020-08-31 | 株式会社Screenホールディングス | 基板処理装置、及び基板処理方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0456321A (ja) * | 1990-06-26 | 1992-02-24 | Fujitsu Ltd | 半導体ウエハの洗浄装置 |
JPH0722541U (ja) * | 1993-09-29 | 1995-04-21 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP2003188140A (ja) | 2001-12-17 | 2003-07-04 | Seiko Epson Corp | 液体処理方法、液体処理装置、及び電気光学パネル |
JP2004327826A (ja) | 2003-04-25 | 2004-11-18 | Toshiba Corp | 基板処理装置 |
JP4338612B2 (ja) | 2004-01-30 | 2009-10-07 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP2005211718A (ja) | 2004-01-27 | 2005-08-11 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
TWI262827B (en) | 2005-12-13 | 2006-10-01 | Ind Tech Res Inst | Cleaning device and method of bubble reaction |
KR20070105699A (ko) | 2006-04-27 | 2007-10-31 | 삼성전자주식회사 | 기판 식각 장치 및 이를 이용한 기판 식각 방법 |
JP2010040758A (ja) | 2008-08-05 | 2010-02-18 | Toshiba Mobile Display Co Ltd | 基板処理装置 |
JP6509104B2 (ja) | 2015-09-30 | 2019-05-08 | 東京エレクトロン株式会社 | 基板液処理装置 |
JP2017168612A (ja) | 2016-03-16 | 2017-09-21 | 株式会社Nsc | 処理基板保持治具 |
JP6971137B2 (ja) * | 2017-12-04 | 2021-11-24 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
JP2019197814A (ja) | 2018-05-09 | 2019-11-14 | 株式会社ジェイ・イー・ティ | 基板処理装置 |
JP7116694B2 (ja) | 2019-02-21 | 2022-08-10 | キオクシア株式会社 | 基板処理装置 |
-
2020
- 2020-10-09 JP JP2020171104A patent/JP7461269B2/ja active Active
-
2021
- 2021-10-05 KR KR1020210131563A patent/KR102622515B1/ko active IP Right Grant
- 2021-10-07 TW TW110137272A patent/TWI803011B/zh active
- 2021-10-08 CN CN202111172547.6A patent/CN114334716A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020047885A (ja) | 2018-09-21 | 2020-03-26 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP2020136679A (ja) * | 2019-02-20 | 2020-08-31 | 株式会社Screenホールディングス | 基板処理装置、及び基板処理方法 |
Also Published As
Publication number | Publication date |
---|---|
JP7461269B2 (ja) | 2024-04-03 |
KR20220047514A (ko) | 2022-04-18 |
CN114334716A (zh) | 2022-04-12 |
TW202220087A (zh) | 2022-05-16 |
JP2022062909A (ja) | 2022-04-21 |
TWI803011B (zh) | 2023-05-21 |
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