KR102616529B1 - 레이저 가공 장치 - Google Patents
레이저 가공 장치 Download PDFInfo
- Publication number
- KR102616529B1 KR102616529B1 KR1020180131923A KR20180131923A KR102616529B1 KR 102616529 B1 KR102616529 B1 KR 102616529B1 KR 1020180131923 A KR1020180131923 A KR 1020180131923A KR 20180131923 A KR20180131923 A KR 20180131923A KR 102616529 B1 KR102616529 B1 KR 102616529B1
- Authority
- KR
- South Korea
- Prior art keywords
- liquid
- laser beam
- workpiece
- concentrator
- laser
- Prior art date
Links
- 239000007788 liquid Substances 0.000 claims abstract description 184
- 239000007921 spray Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000005507 spraying Methods 0.000 claims abstract description 3
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 abstract description 8
- 238000011084 recovery Methods 0.000 description 26
- 238000002679 ablation Methods 0.000 description 13
- 238000001914 filtration Methods 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000002542 deteriorative effect Effects 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/142—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Laser Surgery Devices (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017214473A JP6998178B2 (ja) | 2017-11-07 | 2017-11-07 | レーザー加工装置 |
JPJP-P-2017-214473 | 2017-11-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20190051822A KR20190051822A (ko) | 2019-05-15 |
KR102616529B1 true KR102616529B1 (ko) | 2023-12-20 |
Family
ID=66401900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020180131923A KR102616529B1 (ko) | 2017-11-07 | 2018-10-31 | 레이저 가공 장치 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6998178B2 (ja) |
KR (1) | KR102616529B1 (ja) |
CN (1) | CN109746572B (ja) |
TW (1) | TWI778144B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102466684B1 (ko) * | 2020-12-01 | 2022-11-15 | 서울대학교 산학협력단 | 레이저를 이용한 세라믹 재료의 가공시스템 및 이를 이용한 가공방법 |
CN115458468B (zh) * | 2022-11-11 | 2023-03-24 | 扬州韩思半导体科技有限公司 | 一种半导体晶圆激光切割装置及方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012152823A (ja) | 2011-01-25 | 2012-08-16 | Atton Corp | 斜角方向から照射されるスキャンされたレーザービームを用いた対象物の加工方法及びその装置 |
JP2015085347A (ja) * | 2013-10-29 | 2015-05-07 | 株式会社ディスコ | レーザー加工装置 |
JP2016036818A (ja) * | 2014-08-06 | 2016-03-22 | 株式会社ディスコ | レーザー加工装置 |
JP2016047547A (ja) | 2014-08-28 | 2016-04-07 | 株式会社ディスコ | レーザー加工装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57190795A (en) * | 1981-05-20 | 1982-11-24 | Matsushita Electric Ind Co Ltd | Laser working device |
JPS59178189A (ja) * | 1983-03-29 | 1984-10-09 | Inoue Japax Res Inc | レ−ザ加工装置 |
JPH10305420A (ja) | 1997-03-04 | 1998-11-17 | Ngk Insulators Ltd | 酸化物単結晶からなる母材の加工方法、機能性デバイスの製造方法 |
JP3408805B2 (ja) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | 切断起点領域形成方法及び加工対象物切断方法 |
US20030062126A1 (en) * | 2001-10-03 | 2003-04-03 | Scaggs Michael J. | Method and apparatus for assisting laser material processing |
TWI236944B (en) | 2001-12-17 | 2005-08-01 | Tokyo Electron Ltd | Film removal method and apparatus, and substrate processing system |
JP2004188475A (ja) | 2002-12-13 | 2004-07-08 | Disco Abrasive Syst Ltd | レーザー加工方法 |
JP4843212B2 (ja) | 2004-10-29 | 2011-12-21 | 東京エレクトロン株式会社 | レーザー処理装置及びレーザー処理方法 |
JP2007144494A (ja) | 2005-11-30 | 2007-06-14 | Tokyo Electron Ltd | レーザー処理装置及びレーザー処理方法 |
DE102011107982A1 (de) * | 2011-07-20 | 2013-01-24 | Rena Gmbh | Werkzeugkopf (LCP-Kopf) |
JP6151557B2 (ja) | 2013-05-13 | 2017-06-21 | 株式会社ディスコ | レーザー加工方法 |
WO2016122821A2 (en) * | 2015-01-29 | 2016-08-04 | Imra America, Inc. | Laser-based modification of transparent materials |
TWI571344B (zh) * | 2015-06-18 | 2017-02-21 | Liquid laser coupling system and liquid laser processing device |
-
2017
- 2017-11-07 JP JP2017214473A patent/JP6998178B2/ja active Active
-
2018
- 2018-10-04 TW TW107135087A patent/TWI778144B/zh active
- 2018-10-31 KR KR1020180131923A patent/KR102616529B1/ko active IP Right Grant
- 2018-10-31 CN CN201811283324.5A patent/CN109746572B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012152823A (ja) | 2011-01-25 | 2012-08-16 | Atton Corp | 斜角方向から照射されるスキャンされたレーザービームを用いた対象物の加工方法及びその装置 |
JP2015085347A (ja) * | 2013-10-29 | 2015-05-07 | 株式会社ディスコ | レーザー加工装置 |
JP2016036818A (ja) * | 2014-08-06 | 2016-03-22 | 株式会社ディスコ | レーザー加工装置 |
JP2016047547A (ja) | 2014-08-28 | 2016-04-07 | 株式会社ディスコ | レーザー加工装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2019084562A (ja) | 2019-06-06 |
TWI778144B (zh) | 2022-09-21 |
CN109746572B (zh) | 2022-04-01 |
JP6998178B2 (ja) | 2022-01-18 |
CN109746572A (zh) | 2019-05-14 |
TW201918313A (zh) | 2019-05-16 |
KR20190051822A (ko) | 2019-05-15 |
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E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant |