JP2019084562A - レーザー加工装置 - Google Patents
レーザー加工装置 Download PDFInfo
- Publication number
- JP2019084562A JP2019084562A JP2017214473A JP2017214473A JP2019084562A JP 2019084562 A JP2019084562 A JP 2019084562A JP 2017214473 A JP2017214473 A JP 2017214473A JP 2017214473 A JP2017214473 A JP 2017214473A JP 2019084562 A JP2019084562 A JP 2019084562A
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- laser beam
- workpiece
- axis direction
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000007788 liquid Substances 0.000 claims abstract description 194
- 230000001678 irradiating effect Effects 0.000 claims description 9
- 239000007921 spray Substances 0.000 abstract 2
- 238000011084 recovery Methods 0.000 description 27
- 238000002679 ablation Methods 0.000 description 13
- 238000001914 filtration Methods 0.000 description 10
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 239000000428 dust Substances 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Abstract
Description
枠体26の水平壁部262の内部には、保持手段22に保持されるウエーハ10にレーザー光線を照射するレーザー光線照射手段8を構成する光学系が収容される。水平壁部262の先端部下面側には、レーザー照射機構8の一部を構成する集光器86が配設されると共に、集光器86に対して図中矢印Xで示す方向で隣接する位置にアライメント手段88が配設される。アライメント手段88は、保持手段22に保持される被加工物を撮像してレーザー加工を施すべき領域を検出し、集光器86と、被加工物の加工位置との位置合わせを行うために利用される。
レーザー光線の波長 :226nm、355nm、532nm、1064nm
平均出力 :10〜100W
繰り返し周波数 :0〜300MHz
パルス幅 :50fs〜1ns
加工送り速度 :10〜1000mm/s
4:液体供給機構
8:レーザー光線照射手段
10:ウエーハ(板状の被加工物)
21:基台
22:保持手段
23:移動手段
26:枠体
261:垂直壁部
262:水平壁部
30:X方向可動板
31:Y方向可動板
33:カバー板
34:チャックテーブル
35:吸着チャック
40:液体層生成器
42:筐体
421:天壁
421a:円形開口部
421b:エア抜き孔
422:側壁
422a:内部空間
422b:第一の枠部材
422c:第二の枠部材
422d:第三の枠部材
422e:液体噴射ノズル
422f:噴射ノズル供給孔
422g:液体導入口
422h:液体通路
422i:液体供給口
423:透明板
43:液体供給部
43a:供給口
43b:内部通路
43c:中央排出口
43d:副排出口
44:液体供給ポンプ
45:濾過フィルター
50:X方向移動手段
52:Y方向移動手段
60:液体回収プール
60A:空間部
65:液体排出孔
66:蛇腹カバー
70:液体回収路
86:集光器
88:アライメント手段
Claims (2)
- 板状の被加工物を保持する保持手段と、該保持手段に保持された被加工物にレーザー光線を照射する集光器を備えたレーザー光線照射手段と、該保持手段と該集光器とを相対的に加工送りする加工送り手段と、を少なくとも含み構成されるレーザー加工装置であって、
該集光器の直下に位置付けられ、被加工物の上面に液体の層を生成する液体層生成器を備え、
該液体層生成器は、
該集光器が照射するレーザー光線の通過を許容する透明板と、該透明板を含む天壁と、該天壁の外側から垂下し被加工物との間に隙間を形成する下端部を有する側壁と、から構成された筐体と、該筐体の内部空間に液体を供給し内部空間を液体で満たす液体供給部と、から構成され、
該筐体には、被加工物に照射されるレーザー光線の照射位置に向けて液体を噴射する液体噴射ノズルが配設される、レーザー加工装置。 - 該レーザー光線照射手段には、該発振器から発振されたレーザー光線を分散させる分散手段が配設される、請求項1に記載のレーザー加工装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017214473A JP6998178B2 (ja) | 2017-11-07 | 2017-11-07 | レーザー加工装置 |
TW107135087A TWI778144B (zh) | 2017-11-07 | 2018-10-04 | 雷射加工裝置 |
CN201811283324.5A CN109746572B (zh) | 2017-11-07 | 2018-10-31 | 激光加工装置 |
KR1020180131923A KR102616529B1 (ko) | 2017-11-07 | 2018-10-31 | 레이저 가공 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017214473A JP6998178B2 (ja) | 2017-11-07 | 2017-11-07 | レーザー加工装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019084562A true JP2019084562A (ja) | 2019-06-06 |
JP6998178B2 JP6998178B2 (ja) | 2022-01-18 |
Family
ID=66401900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017214473A Active JP6998178B2 (ja) | 2017-11-07 | 2017-11-07 | レーザー加工装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6998178B2 (ja) |
KR (1) | KR102616529B1 (ja) |
CN (1) | CN109746572B (ja) |
TW (1) | TWI778144B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102466684B1 (ko) * | 2020-12-01 | 2022-11-15 | 서울대학교 산학협력단 | 레이저를 이용한 세라믹 재료의 가공시스템 및 이를 이용한 가공방법 |
CN115458468B (zh) * | 2022-11-11 | 2023-03-24 | 扬州韩思半导体科技有限公司 | 一种半导体晶圆激光切割装置及方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040197433A1 (en) * | 2001-12-17 | 2004-10-07 | Shouichi Terada | Film removing apparatus, film removing method and substrate processing system |
JP2006122982A (ja) * | 2004-10-29 | 2006-05-18 | Tokyo Electron Ltd | レーザー処理装置及びレーザー処理方法 |
JP2007144494A (ja) * | 2005-11-30 | 2007-06-14 | Tokyo Electron Ltd | レーザー処理装置及びレーザー処理方法 |
JP2012152823A (ja) * | 2011-01-25 | 2012-08-16 | Atton Corp | 斜角方向から照射されるスキャンされたレーザービームを用いた対象物の加工方法及びその装置 |
JP2016036818A (ja) * | 2014-08-06 | 2016-03-22 | 株式会社ディスコ | レーザー加工装置 |
JP2016047547A (ja) * | 2014-08-28 | 2016-04-07 | 株式会社ディスコ | レーザー加工装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57190795A (en) * | 1981-05-20 | 1982-11-24 | Matsushita Electric Ind Co Ltd | Laser working device |
JPS59178189A (ja) * | 1983-03-29 | 1984-10-09 | Inoue Japax Res Inc | レ−ザ加工装置 |
JPH10305420A (ja) | 1997-03-04 | 1998-11-17 | Ngk Insulators Ltd | 酸化物単結晶からなる母材の加工方法、機能性デバイスの製造方法 |
JP3408805B2 (ja) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | 切断起点領域形成方法及び加工対象物切断方法 |
US20030062126A1 (en) * | 2001-10-03 | 2003-04-03 | Scaggs Michael J. | Method and apparatus for assisting laser material processing |
JP2004188475A (ja) | 2002-12-13 | 2004-07-08 | Disco Abrasive Syst Ltd | レーザー加工方法 |
DE102011107982A1 (de) * | 2011-07-20 | 2013-01-24 | Rena Gmbh | Werkzeugkopf (LCP-Kopf) |
JP6151557B2 (ja) | 2013-05-13 | 2017-06-21 | 株式会社ディスコ | レーザー加工方法 |
JP6189178B2 (ja) * | 2013-10-29 | 2017-08-30 | 株式会社ディスコ | レーザー加工装置 |
WO2016122821A2 (en) * | 2015-01-29 | 2016-08-04 | Imra America, Inc. | Laser-based modification of transparent materials |
TWI571344B (zh) * | 2015-06-18 | 2017-02-21 | Liquid laser coupling system and liquid laser processing device |
-
2017
- 2017-11-07 JP JP2017214473A patent/JP6998178B2/ja active Active
-
2018
- 2018-10-04 TW TW107135087A patent/TWI778144B/zh active
- 2018-10-31 CN CN201811283324.5A patent/CN109746572B/zh active Active
- 2018-10-31 KR KR1020180131923A patent/KR102616529B1/ko active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040197433A1 (en) * | 2001-12-17 | 2004-10-07 | Shouichi Terada | Film removing apparatus, film removing method and substrate processing system |
JP2006122982A (ja) * | 2004-10-29 | 2006-05-18 | Tokyo Electron Ltd | レーザー処理装置及びレーザー処理方法 |
JP2007144494A (ja) * | 2005-11-30 | 2007-06-14 | Tokyo Electron Ltd | レーザー処理装置及びレーザー処理方法 |
JP2012152823A (ja) * | 2011-01-25 | 2012-08-16 | Atton Corp | 斜角方向から照射されるスキャンされたレーザービームを用いた対象物の加工方法及びその装置 |
JP2016036818A (ja) * | 2014-08-06 | 2016-03-22 | 株式会社ディスコ | レーザー加工装置 |
JP2016047547A (ja) * | 2014-08-28 | 2016-04-07 | 株式会社ディスコ | レーザー加工装置 |
Also Published As
Publication number | Publication date |
---|---|
TW201918313A (zh) | 2019-05-16 |
CN109746572B (zh) | 2022-04-01 |
JP6998178B2 (ja) | 2022-01-18 |
KR20190051822A (ko) | 2019-05-15 |
TWI778144B (zh) | 2022-09-21 |
CN109746572A (zh) | 2019-05-14 |
KR102616529B1 (ko) | 2023-12-20 |
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