KR102612718B1 - 복수의 슈퍼-픽셀(super-pixel)들을 포함하는 이미지 센서 - Google Patents
복수의 슈퍼-픽셀(super-pixel)들을 포함하는 이미지 센서 Download PDFInfo
- Publication number
- KR102612718B1 KR102612718B1 KR1020217002524A KR20217002524A KR102612718B1 KR 102612718 B1 KR102612718 B1 KR 102612718B1 KR 1020217002524 A KR1020217002524 A KR 1020217002524A KR 20217002524 A KR20217002524 A KR 20217002524A KR 102612718 B1 KR102612718 B1 KR 102612718B1
- Authority
- KR
- South Korea
- Prior art keywords
- analog
- delete delete
- signal
- super
- pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/47—Image sensors with pixel address output; Event-driven image sensors; Selection of pixels to be read out based on image data
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/133—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
- H04N25/443—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading pixels from selected two-dimensional [2D] regions of the array, e.g. for windowing or digital zooming
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
- H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
- H04N25/707—Pixels for event detection
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/709—Circuitry for control of the power supply
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020237042252A KR20230173210A (ko) | 2018-06-27 | 2019-06-27 | 복수의 슈퍼-픽셀(super-pixel)들을 포함하는 이미지 센서 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862690948P | 2018-06-27 | 2018-06-27 | |
| US62/690948 | 2018-06-27 | ||
| US201862780913P | 2018-12-17 | 2018-12-17 | |
| US62/780913 | 2018-12-17 | ||
| PCT/EP2019/067264 WO2020002562A1 (en) | 2018-06-27 | 2019-06-27 | Image sensor with a plurality of super-pixels |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237042252A Division KR20230173210A (ko) | 2018-06-27 | 2019-06-27 | 복수의 슈퍼-픽셀(super-pixel)들을 포함하는 이미지 센서 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20210024608A KR20210024608A (ko) | 2021-03-05 |
| KR102612718B1 true KR102612718B1 (ko) | 2023-12-19 |
Family
ID=67139733
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020217002524A Active KR102612718B1 (ko) | 2018-06-27 | 2019-06-27 | 복수의 슈퍼-픽셀(super-pixel)들을 포함하는 이미지 센서 |
| KR1020237042252A Pending KR20230173210A (ko) | 2018-06-27 | 2019-06-27 | 복수의 슈퍼-픽셀(super-pixel)들을 포함하는 이미지 센서 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237042252A Pending KR20230173210A (ko) | 2018-06-27 | 2019-06-27 | 복수의 슈퍼-픽셀(super-pixel)들을 포함하는 이미지 센서 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11368645B2 (https=) |
| EP (2) | EP3917134B1 (https=) |
| JP (2) | JP7248710B2 (https=) |
| KR (2) | KR102612718B1 (https=) |
| CN (2) | CN119031259A (https=) |
| WO (1) | WO2020002562A1 (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020216953A1 (en) | 2019-04-25 | 2020-10-29 | Prophesee Sa | Systems and methods for imaging and sensing vibrations |
| CN111601056B (zh) * | 2020-05-14 | 2022-03-15 | 中国电子科技集团公司第四十四研究所 | 大动态范围半浮栅图像传感器 |
| EP3929864A1 (en) | 2020-06-23 | 2021-12-29 | Prophesee | Image enhancement method, apparatus and system |
| US11430828B2 (en) | 2020-12-17 | 2022-08-30 | Omnivision Technologies, Inc. | Event driven pixel for spatial information extraction |
| US11652492B2 (en) | 2020-12-30 | 2023-05-16 | Analog Devices International Unlimited Company | Signal chain with embedded power management |
| US11516419B2 (en) | 2021-01-22 | 2022-11-29 | Omnivision Technologies, Inc. | Digital time stamping design for event driven pixel |
| EP4184126B1 (en) * | 2021-11-18 | 2024-07-31 | Melexis Technologies SA | Sensor with analog output and sensor system |
| CN114339001B (zh) * | 2021-12-30 | 2023-09-12 | 维沃移动通信有限公司 | 图像传感器、曝光控制方法、摄像模组和电子设备 |
| US11942960B2 (en) | 2022-01-31 | 2024-03-26 | Analog Devices, Inc. | ADC with precision reference power saving mode |
| CN115118895B (zh) * | 2022-07-29 | 2025-04-29 | 上海齐感电子信息科技有限公司 | 一种视觉系统 |
| KR20240111221A (ko) | 2023-01-09 | 2024-07-16 | 삼성전자주식회사 | 비전 센서 및 이를 포함하는 이미지 처리 장치 |
| CN116546340B (zh) * | 2023-07-05 | 2023-09-19 | 华中师范大学 | 一种高速cmos像素探测器 |
| CN118338148B (zh) * | 2024-02-07 | 2025-10-28 | 华为技术有限公司 | 一种图像传感器、电子设备及系统 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009049870A (ja) * | 2007-08-22 | 2009-03-05 | Sony Corp | 固体撮像装置、撮像装置 |
| US20100182468A1 (en) * | 2006-11-23 | 2010-07-22 | Austrian Research Centers Gmbh-Arc | Method for the generation of an image in electronic form, picture element (pixel) for an image sensor for the generation of an image as well as image sensor |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2762162A1 (fr) * | 1997-04-15 | 1998-10-16 | Philips Electronics Nv | Dispositif d'alignement numerique |
| EP1301028A1 (en) * | 2001-10-05 | 2003-04-09 | STMicroelectronics Limited | Improvements in or relating to CMOS Image sensors |
| JP2006303752A (ja) * | 2005-04-19 | 2006-11-02 | Sony Corp | 撮像装置 |
| KR101331982B1 (ko) | 2005-06-03 | 2013-11-25 | 우니페르지타에트 취리히 | 시간 의존적 이미지 데이터를 검출하기 위한 광 어레이 |
| JP4819561B2 (ja) | 2006-04-24 | 2011-11-24 | 浜松ホトニクス株式会社 | 固体撮像装置 |
| US7326906B2 (en) * | 2006-06-03 | 2008-02-05 | Orbotech Medical Solutions Ltd. | Digital readout system |
| IL212289A (en) * | 2011-04-13 | 2016-08-31 | Semi-Conductor Devices - An Elbit Systems - Rafael Partnership | Detector pixel signal readout circuit and an imaging method thereof |
| EP2795894B1 (en) | 2011-12-19 | 2020-06-17 | Universität Zürich | Photoarray, particularly for combining sampled brightness sensing with asynchronous detection of time-dependent image data |
| US9521337B1 (en) * | 2012-07-13 | 2016-12-13 | Rambus Inc. | Reset-marking pixel sensor |
| ES2476115B1 (es) | 2012-12-11 | 2015-04-20 | Consejo Superior De Investigaciones Científicas (Csic) | Metodo y dispositivo para la deteccion de la variacion temporal de la intensidad luminosa en una matriz de fotosensores |
| US9380245B1 (en) * | 2013-02-14 | 2016-06-28 | Rambus Inc. | Conditional-reset image sensor with analog counter array |
| EP2974280B1 (en) * | 2013-03-15 | 2021-11-24 | Rambus Inc. | Threshold-monitoring, conditional-reset image sensor |
| WO2015038569A2 (en) * | 2013-09-10 | 2015-03-19 | Rambus Inc. | Oversampled image sensor with conditional pixel readout |
| KR102327749B1 (ko) | 2013-09-16 | 2021-11-17 | 프로페시 | 동적 단일 광다이오드 픽셀 회로 및 그 동작 방법 |
| JP6369086B2 (ja) * | 2014-03-25 | 2018-08-08 | セイコーエプソン株式会社 | 物理量センサー、センサーユニット、電子機器及び移動体 |
| JP6545541B2 (ja) * | 2014-06-25 | 2019-07-17 | 株式会社半導体エネルギー研究所 | 撮像装置、監視装置、及び電子機器 |
| US20160011654A1 (en) * | 2014-07-14 | 2016-01-14 | Samsung Electronics Co., Ltd. | Interfacing apparatus and user input processing method |
| US9986179B2 (en) * | 2014-09-30 | 2018-05-29 | Qualcomm Incorporated | Sensor architecture using frame-based and event-based hybrid scheme |
| WO2017013806A1 (ja) * | 2015-07-23 | 2017-01-26 | オリンパス株式会社 | 固体撮像装置 |
| CN109644245B (zh) | 2016-04-04 | 2020-11-27 | 普诺飞思公司 | 基于采样和保持的时域对比视觉传感器及像素电路 |
| JP2018022935A (ja) * | 2016-08-01 | 2018-02-08 | ソニー株式会社 | 撮像装置、および、撮像装置の制御方法 |
| EP3313064A1 (en) | 2016-10-20 | 2018-04-25 | Chronocam | Pixel circuit for detecting time-dependent visual data |
| JP7074954B2 (ja) * | 2016-12-30 | 2022-05-25 | ソニー アドバンスト ビジュアル センシング アーゲー | 動的ビジョンセンサアーキテクチャ |
| TWI879128B (zh) * | 2018-01-23 | 2025-04-01 | 日商索尼半導體解決方案公司 | 光檢測裝置 |
| WO2019211317A1 (en) | 2018-04-30 | 2019-11-07 | Prophesee | Systems and methods for asynchronous, time-based image sensing |
| JP2020088481A (ja) * | 2018-11-19 | 2020-06-04 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子、および、撮像装置 |
-
2019
- 2019-06-27 WO PCT/EP2019/067264 patent/WO2020002562A1/en not_active Ceased
- 2019-06-27 EP EP21187317.9A patent/EP3917134B1/en active Active
- 2019-06-27 US US17/255,972 patent/US11368645B2/en active Active
- 2019-06-27 JP JP2020572682A patent/JP7248710B2/ja active Active
- 2019-06-27 CN CN202411073205.2A patent/CN119031259A/zh active Pending
- 2019-06-27 KR KR1020217002524A patent/KR102612718B1/ko active Active
- 2019-06-27 EP EP19735280.0A patent/EP3811609B1/en active Active
- 2019-06-27 CN CN201980056827.5A patent/CN112640431B/zh active Active
- 2019-06-27 KR KR1020237042252A patent/KR20230173210A/ko active Pending
-
2022
- 2022-05-06 US US17/662,412 patent/US11979673B2/en active Active
-
2023
- 2023-03-15 JP JP2023040521A patent/JP7566960B2/ja active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100182468A1 (en) * | 2006-11-23 | 2010-07-22 | Austrian Research Centers Gmbh-Arc | Method for the generation of an image in electronic form, picture element (pixel) for an image sensor for the generation of an image as well as image sensor |
| JP2009049870A (ja) * | 2007-08-22 | 2009-03-05 | Sony Corp | 固体撮像装置、撮像装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7248710B2 (ja) | 2023-03-29 |
| US11368645B2 (en) | 2022-06-21 |
| KR20210024608A (ko) | 2021-03-05 |
| EP3917134C0 (en) | 2023-11-15 |
| EP3811609A1 (en) | 2021-04-28 |
| CN112640431B (zh) | 2024-08-23 |
| EP3811609C0 (en) | 2024-08-07 |
| JP7566960B2 (ja) | 2024-10-15 |
| US20210127083A1 (en) | 2021-04-29 |
| CN112640431A (zh) | 2021-04-09 |
| EP3917134A1 (en) | 2021-12-01 |
| US20220264050A1 (en) | 2022-08-18 |
| KR20230173210A (ko) | 2023-12-26 |
| WO2020002562A1 (en) | 2020-01-02 |
| EP3811609B1 (en) | 2024-08-07 |
| JP2021529467A (ja) | 2021-10-28 |
| JP2023075285A (ja) | 2023-05-30 |
| CN119031259A (zh) | 2024-11-26 |
| US11979673B2 (en) | 2024-05-07 |
| EP3917134B1 (en) | 2023-11-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102612718B1 (ko) | 복수의 슈퍼-픽셀(super-pixel)들을 포함하는 이미지 센서 | |
| EP2832090B1 (en) | Cmos image sensors implementing full frame digital correlated double sampling with global shutter | |
| CN204633945U (zh) | 图像传感器、成像系统和处理器系统 | |
| KR102212100B1 (ko) | 분할-게이트 조건부-재설정 이미지 센서 | |
| US9247170B2 (en) | Triple conversion gain image sensor pixels | |
| CN207022104U (zh) | 图像传感器像素和成像系统 | |
| US9591245B2 (en) | Image sensor pixels with adjustable body bias | |
| US7282685B2 (en) | Multi-point correlated sampling for image sensors | |
| US11184572B2 (en) | Event array readout control of event-based vision sensing | |
| US20140063300A1 (en) | High dynamic range imaging systems having clear filter pixel arrays | |
| US20090108176A1 (en) | Global shutter pixel circuit with transistor sharing for CMOS image sensors | |
| US20150055002A1 (en) | Multimode pixel readout for enhanced dynamic range | |
| US9456159B1 (en) | Pixels with an active reset circuit in CMOS image sensors | |
| US7554071B2 (en) | Method and apparatus providing pixel array having automatic light control pixels and image capture pixels | |
| JP2016090785A (ja) | 撮像装置及びその制御方法 | |
| EP3420592B1 (en) | Improved ultra-high dynamic range pixel architecture | |
| CN206302500U (zh) | 成像像素 | |
| CN115349253B (zh) | 用于视觉传感器的像素电路和方法 | |
| US20250088774A1 (en) | Ramp generation circuit, image sensing device including the ramp generation circuit, and method for operating the image sensing device | |
| CN110557583B (zh) | 图像传感器、操作图像传感器的方法及成像系统 | |
| JP2023016776A (ja) | 撮影装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20210126 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20220426 Comment text: Request for Examination of Application |
|
| PA0302 | Request for accelerated examination |
Patent event date: 20220603 Patent event code: PA03022R01D Comment text: Request for Accelerated Examination |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20230216 Patent event code: PE09021S01D |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20230908 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20231212 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 20231213 End annual number: 3 Start annual number: 1 |
|
| PG1601 | Publication of registration |