CN119031259A - 具有多个超像素的图像传感器 - Google Patents

具有多个超像素的图像传感器 Download PDF

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Publication number
CN119031259A
CN119031259A CN202411073205.2A CN202411073205A CN119031259A CN 119031259 A CN119031259 A CN 119031259A CN 202411073205 A CN202411073205 A CN 202411073205A CN 119031259 A CN119031259 A CN 119031259A
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CN
China
Prior art keywords
signal
analog
exposure measurement
digital
latch
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Pending
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CN202411073205.2A
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English (en)
Chinese (zh)
Inventor
T·费纳特
D·马托林
C·普斯奇
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Proteus Corp
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Proteus Corp
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Publication of CN119031259A publication Critical patent/CN119031259A/zh
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/47Image sensors with pixel address output; Event-driven image sensors; Selection of pixels to be read out based on image data
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/443Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading pixels from selected two-dimensional [2D] regions of the array, e.g. for windowing or digital zooming
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/53Control of the integration time
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/57Control of the dynamic range
    • H04N25/58Control of the dynamic range involving two or more exposures
    • H04N25/581Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/583Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/57Control of the dynamic range
    • H04N25/59Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/703SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/707Pixels for event detection
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/709Circuitry for control of the power supply
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75Circuitry for providing, modifying or processing image signals from the pixel array
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/79Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/133Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202411073205.2A 2018-06-27 2019-06-27 具有多个超像素的图像传感器 Pending CN119031259A (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201862690948P 2018-06-27 2018-06-27
US62/690,948 2018-06-27
US201862780913P 2018-12-17 2018-12-17
US62/780,913 2018-12-17
CN201980056827.5A CN112640431B (zh) 2018-06-27 2019-06-27 具有多个超像素的图像传感器
PCT/EP2019/067264 WO2020002562A1 (en) 2018-06-27 2019-06-27 Image sensor with a plurality of super-pixels

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201980056827.5A Division CN112640431B (zh) 2018-06-27 2019-06-27 具有多个超像素的图像传感器

Publications (1)

Publication Number Publication Date
CN119031259A true CN119031259A (zh) 2024-11-26

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CN201980056827.5A Active CN112640431B (zh) 2018-06-27 2019-06-27 具有多个超像素的图像传感器

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US (2) US11368645B2 (https=)
EP (2) EP3917134B1 (https=)
JP (2) JP7248710B2 (https=)
KR (2) KR102612718B1 (https=)
CN (2) CN119031259A (https=)
WO (1) WO2020002562A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020216953A1 (en) 2019-04-25 2020-10-29 Prophesee Sa Systems and methods for imaging and sensing vibrations
CN111601056B (zh) * 2020-05-14 2022-03-15 中国电子科技集团公司第四十四研究所 大动态范围半浮栅图像传感器
EP3929864A1 (en) 2020-06-23 2021-12-29 Prophesee Image enhancement method, apparatus and system
US11430828B2 (en) 2020-12-17 2022-08-30 Omnivision Technologies, Inc. Event driven pixel for spatial information extraction
US11652492B2 (en) 2020-12-30 2023-05-16 Analog Devices International Unlimited Company Signal chain with embedded power management
US11516419B2 (en) 2021-01-22 2022-11-29 Omnivision Technologies, Inc. Digital time stamping design for event driven pixel
EP4184126B1 (en) * 2021-11-18 2024-07-31 Melexis Technologies SA Sensor with analog output and sensor system
CN114339001B (zh) * 2021-12-30 2023-09-12 维沃移动通信有限公司 图像传感器、曝光控制方法、摄像模组和电子设备
US11942960B2 (en) 2022-01-31 2024-03-26 Analog Devices, Inc. ADC with precision reference power saving mode
CN115118895B (zh) * 2022-07-29 2025-04-29 上海齐感电子信息科技有限公司 一种视觉系统
KR20240111221A (ko) 2023-01-09 2024-07-16 삼성전자주식회사 비전 센서 및 이를 포함하는 이미지 처리 장치
CN116546340B (zh) * 2023-07-05 2023-09-19 华中师范大学 一种高速cmos像素探测器
CN118338148B (zh) * 2024-02-07 2025-10-28 华为技术有限公司 一种图像传感器、电子设备及系统

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2762162A1 (fr) * 1997-04-15 1998-10-16 Philips Electronics Nv Dispositif d'alignement numerique
EP1301028A1 (en) * 2001-10-05 2003-04-09 STMicroelectronics Limited Improvements in or relating to CMOS Image sensors
JP2006303752A (ja) * 2005-04-19 2006-11-02 Sony Corp 撮像装置
KR101331982B1 (ko) 2005-06-03 2013-11-25 우니페르지타에트 취리히 시간 의존적 이미지 데이터를 검출하기 위한 광 어레이
JP4819561B2 (ja) 2006-04-24 2011-11-24 浜松ホトニクス株式会社 固体撮像装置
US7326906B2 (en) * 2006-06-03 2008-02-05 Orbotech Medical Solutions Ltd. Digital readout system
AT504582B1 (de) * 2006-11-23 2008-12-15 Arc Austrian Res Centers Gmbh Verfahren zur generierung eines bildes in elektronischer form, bildelement für einen bildsensor zur generierung eines bildes sowie bildsensor
JP2009049870A (ja) * 2007-08-22 2009-03-05 Sony Corp 固体撮像装置、撮像装置
IL212289A (en) * 2011-04-13 2016-08-31 Semi-Conductor Devices - An Elbit Systems - Rafael Partnership Detector pixel signal readout circuit and an imaging method thereof
EP2795894B1 (en) 2011-12-19 2020-06-17 Universität Zürich Photoarray, particularly for combining sampled brightness sensing with asynchronous detection of time-dependent image data
US9521337B1 (en) * 2012-07-13 2016-12-13 Rambus Inc. Reset-marking pixel sensor
ES2476115B1 (es) 2012-12-11 2015-04-20 Consejo Superior De Investigaciones Científicas (Csic) Metodo y dispositivo para la deteccion de la variacion temporal de la intensidad luminosa en una matriz de fotosensores
US9380245B1 (en) * 2013-02-14 2016-06-28 Rambus Inc. Conditional-reset image sensor with analog counter array
EP2974280B1 (en) * 2013-03-15 2021-11-24 Rambus Inc. Threshold-monitoring, conditional-reset image sensor
WO2015038569A2 (en) * 2013-09-10 2015-03-19 Rambus Inc. Oversampled image sensor with conditional pixel readout
KR102327749B1 (ko) 2013-09-16 2021-11-17 프로페시 동적 단일 광다이오드 픽셀 회로 및 그 동작 방법
JP6369086B2 (ja) * 2014-03-25 2018-08-08 セイコーエプソン株式会社 物理量センサー、センサーユニット、電子機器及び移動体
JP6545541B2 (ja) * 2014-06-25 2019-07-17 株式会社半導体エネルギー研究所 撮像装置、監視装置、及び電子機器
US20160011654A1 (en) * 2014-07-14 2016-01-14 Samsung Electronics Co., Ltd. Interfacing apparatus and user input processing method
US9986179B2 (en) * 2014-09-30 2018-05-29 Qualcomm Incorporated Sensor architecture using frame-based and event-based hybrid scheme
WO2017013806A1 (ja) * 2015-07-23 2017-01-26 オリンパス株式会社 固体撮像装置
CN109644245B (zh) 2016-04-04 2020-11-27 普诺飞思公司 基于采样和保持的时域对比视觉传感器及像素电路
JP2018022935A (ja) * 2016-08-01 2018-02-08 ソニー株式会社 撮像装置、および、撮像装置の制御方法
EP3313064A1 (en) 2016-10-20 2018-04-25 Chronocam Pixel circuit for detecting time-dependent visual data
JP7074954B2 (ja) * 2016-12-30 2022-05-25 ソニー アドバンスト ビジュアル センシング アーゲー 動的ビジョンセンサアーキテクチャ
TWI879128B (zh) * 2018-01-23 2025-04-01 日商索尼半導體解決方案公司 光檢測裝置
WO2019211317A1 (en) 2018-04-30 2019-11-07 Prophesee Systems and methods for asynchronous, time-based image sensing
JP2020088481A (ja) * 2018-11-19 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、撮像装置

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JP7248710B2 (ja) 2023-03-29
US11368645B2 (en) 2022-06-21
KR20210024608A (ko) 2021-03-05
EP3917134C0 (en) 2023-11-15
EP3811609A1 (en) 2021-04-28
CN112640431B (zh) 2024-08-23
EP3811609C0 (en) 2024-08-07
JP7566960B2 (ja) 2024-10-15
US20210127083A1 (en) 2021-04-29
CN112640431A (zh) 2021-04-09
EP3917134A1 (en) 2021-12-01
KR102612718B1 (ko) 2023-12-19
US20220264050A1 (en) 2022-08-18
KR20230173210A (ko) 2023-12-26
WO2020002562A1 (en) 2020-01-02
EP3811609B1 (en) 2024-08-07
JP2021529467A (ja) 2021-10-28
JP2023075285A (ja) 2023-05-30
US11979673B2 (en) 2024-05-07
EP3917134B1 (en) 2023-11-15

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