JP4819561B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP4819561B2 JP4819561B2 JP2006119497A JP2006119497A JP4819561B2 JP 4819561 B2 JP4819561 B2 JP 4819561B2 JP 2006119497 A JP2006119497 A JP 2006119497A JP 2006119497 A JP2006119497 A JP 2006119497A JP 4819561 B2 JP4819561 B2 JP 4819561B2
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- 238000003384 imaging method Methods 0.000 title claims description 156
- 238000006243 chemical reaction Methods 0.000 claims description 59
- 238000009825 accumulation Methods 0.000 claims description 48
- 230000001360 synchronised effect Effects 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 8
- 230000010354 integration Effects 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 5
- 210000000214 mouth Anatomy 0.000 description 5
- 238000001514 detection method Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/71—Circuitry for evaluating the brightness variation
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/30—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
- H04N25/707—Pixels for event detection
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
Claims (5)
- 入射光量に応じた量の電荷を発生するフォトダイオードと該電荷を蓄積する電荷蓄積部とを各々有する複数の画素部を含み、電荷蓄積動作制御信号が指示する期間に前記複数の画素部それぞれにおいて前記フォトダイオードで発生した電荷を前記電荷蓄積部により蓄積する撮像用受光部と、
入射光量に応じた量の電荷を発生するトリガ用フォトダイオードを含むトリガ用受光部と、
前記電荷蓄積動作制御信号が指示する前記期間の後に、前記複数の画素部それぞれの前記電荷蓄積部に蓄積された電荷の量に応じたデジタル値(以下「画素データ」という。)を出力する撮像用AD変換回路と、前記撮像用AD変換回路が前記画素データを出力していない期間に、前記トリガ用受光部で発生した電荷の量に応じたデジタル値(以下「トリガ用データ」という。)を出力するトリガ用AD変換回路と、を含む出力部と、
前記出力部から出力された前記トリガ用データを入力し、このトリガ用データの絶対値が閾値より大きいときに前記撮像用受光部の前記複数の画素部それぞれに対して電荷蓄積動作を指示する前記電荷蓄積動作制御信号を生成するとともに、前記出力部による前記画素データおよび前記トリガ用データそれぞれの各ビットの出力タイミングに同期したクロック信号を出力する制御部と、
を備え、
前記撮像用AD変換回路と比較して前記トリガ用AD変換回路が低消費電力かつ低速で動作する
ことを特徴とする固体撮像装置。 - 前記撮像用AD変換回路と比較して前記トリガ用AD変換回路が低出力ビット数で動作する、ことを特徴とする請求項1記載の固体撮像装置。
- 前記出力部が前記画素データおよび前記トリガ用データを共通の出力信号線へ出力することを特徴とする請求項1記載の固体撮像装置。
- 前記トリガ用受光部が、前記撮像用受光部を取り囲んで設けられている1つのトリガ用フォトダイオードを含む、ことを特徴とする請求項1記載の固体撮像装置。
- 前記トリガ用受光部が、前記撮像用受光部の周囲に設けられ互いに接続されている複数のトリガ用フォトダイオードを含む、ことを特徴とする請求項1記載の固体撮像装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006119497A JP4819561B2 (ja) | 2006-04-24 | 2006-04-24 | 固体撮像装置 |
PCT/JP2007/058738 WO2007125865A1 (ja) | 2006-04-24 | 2007-04-23 | 固体撮像装置 |
US12/298,264 US8119966B2 (en) | 2006-04-24 | 2007-04-23 | Solid-state image pickup device suppressing power consumption in case of increase in imaging pixels or speed by controlling imaging A/D converting circuit by signal from low power triggering A/D converting circuit |
CN2007800149264A CN101433079B (zh) | 2006-04-24 | 2007-04-23 | 固体摄像装置 |
EP07742173.3A EP2012529B1 (en) | 2006-04-24 | 2007-04-23 | Solid-state imaging device |
TW096114470A TWI428013B (zh) | 2006-04-24 | 2007-04-24 | Solid-state imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006119497A JP4819561B2 (ja) | 2006-04-24 | 2006-04-24 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007295189A JP2007295189A (ja) | 2007-11-08 |
JP4819561B2 true JP4819561B2 (ja) | 2011-11-24 |
Family
ID=38655389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006119497A Active JP4819561B2 (ja) | 2006-04-24 | 2006-04-24 | 固体撮像装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8119966B2 (ja) |
EP (1) | EP2012529B1 (ja) |
JP (1) | JP4819561B2 (ja) |
CN (1) | CN101433079B (ja) |
TW (1) | TWI428013B (ja) |
WO (1) | WO2007125865A1 (ja) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0701076D0 (en) * | 2007-01-19 | 2007-02-28 | E2V Tech Uk Ltd | Imaging apparatus |
US9118850B2 (en) * | 2007-11-27 | 2015-08-25 | Capso Vision, Inc. | Camera system with multiple pixel arrays on a chip |
JP5096946B2 (ja) * | 2008-01-30 | 2012-12-12 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP5559471B2 (ja) | 2008-11-11 | 2014-07-23 | 浜松ホトニクス株式会社 | 放射線検出装置、放射線画像取得システム、放射線検査システム、及び放射線検出方法 |
JP5616106B2 (ja) * | 2010-04-14 | 2014-10-29 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP5616105B2 (ja) * | 2010-04-14 | 2014-10-29 | 浜松ホトニクス株式会社 | 固体撮像装置 |
US10686996B2 (en) | 2017-06-26 | 2020-06-16 | Facebook Technologies, Llc | Digital pixel with extended dynamic range |
US11568609B1 (en) | 2017-07-25 | 2023-01-31 | Meta Platforms Technologies, Llc | Image sensor having on-chip compute circuit |
US10726627B2 (en) | 2017-07-25 | 2020-07-28 | Facebook Technologies, Llc | Sensor system based on stacked sensor layers |
US10598546B2 (en) | 2017-08-17 | 2020-03-24 | Facebook Technologies, Llc | Detecting high intensity light in photo sensor |
US11057581B2 (en) | 2018-01-24 | 2021-07-06 | Facebook Technologies, Llc | Digital pixel array with multi-stage readouts |
US11906353B2 (en) | 2018-06-11 | 2024-02-20 | Meta Platforms Technologies, Llc | Digital pixel with extended dynamic range |
KR20230173210A (ko) * | 2018-06-27 | 2023-12-26 | 프로페시 | 복수의 슈퍼-픽셀(super-pixel)들을 포함하는 이미지 센서 |
US11463636B2 (en) | 2018-06-27 | 2022-10-04 | Facebook Technologies, Llc | Pixel sensor having multiple photodiodes |
US10897586B2 (en) | 2018-06-28 | 2021-01-19 | Facebook Technologies, Llc | Global shutter image sensor |
US10931884B2 (en) | 2018-08-20 | 2021-02-23 | Facebook Technologies, Llc | Pixel sensor having adaptive exposure time |
US11956413B2 (en) | 2018-08-27 | 2024-04-09 | Meta Platforms Technologies, Llc | Pixel sensor having multiple photodiodes and shared comparator |
US11595602B2 (en) | 2018-11-05 | 2023-02-28 | Meta Platforms Technologies, Llc | Image sensor post processing |
US11218660B1 (en) | 2019-03-26 | 2022-01-04 | Facebook Technologies, Llc | Pixel sensor having shared readout structure |
US11943561B2 (en) | 2019-06-13 | 2024-03-26 | Meta Platforms Technologies, Llc | Non-linear quantization at pixel sensor |
US11936998B1 (en) | 2019-10-17 | 2024-03-19 | Meta Platforms Technologies, Llc | Digital pixel sensor having extended dynamic range |
US11902685B1 (en) | 2020-04-28 | 2024-02-13 | Meta Platforms Technologies, Llc | Pixel sensor having hierarchical memory |
US11910114B2 (en) | 2020-07-17 | 2024-02-20 | Meta Platforms Technologies, Llc | Multi-mode image sensor |
US11956560B2 (en) | 2020-10-09 | 2024-04-09 | Meta Platforms Technologies, Llc | Digital pixel sensor having reduced quantization operation |
US12022218B2 (en) | 2020-12-29 | 2024-06-25 | Meta Platforms Technologies, Llc | Digital image sensor using a single-input comparator based quantizer |
US11656124B1 (en) * | 2022-01-26 | 2023-05-23 | Innolux Corporation | Sensing device |
Family Cites Families (11)
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SE469104B (sv) * | 1991-06-03 | 1993-05-10 | Regam Medical Systems Ab | Foerfarande och anordning vid roentgenapparat med elektronisk bildavkaenning |
JPH05130990A (ja) * | 1991-10-25 | 1993-05-28 | Hamamatsu Photonics Kk | 自動露出機能付き医療用x線画像検出装置 |
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JP3415348B2 (ja) * | 1995-11-07 | 2003-06-09 | 東芝医用システムエンジニアリング株式会社 | X線撮像装置 |
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JPH11188033A (ja) * | 1997-12-26 | 1999-07-13 | Hamamatsu Photonics Kk | 歯科用x線像撮像装置および歯科用x線像撮像装置用モジュール |
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JP3997195B2 (ja) * | 2003-11-20 | 2007-10-24 | キヤノン株式会社 | 画像入力装置及びその制御方法 |
-
2006
- 2006-04-24 JP JP2006119497A patent/JP4819561B2/ja active Active
-
2007
- 2007-04-23 EP EP07742173.3A patent/EP2012529B1/en active Active
- 2007-04-23 US US12/298,264 patent/US8119966B2/en active Active
- 2007-04-23 CN CN2007800149264A patent/CN101433079B/zh active Active
- 2007-04-23 WO PCT/JP2007/058738 patent/WO2007125865A1/ja active Application Filing
- 2007-04-24 TW TW096114470A patent/TWI428013B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI428013B (zh) | 2014-02-21 |
EP2012529A1 (en) | 2009-01-07 |
EP2012529B1 (en) | 2016-05-25 |
CN101433079A (zh) | 2009-05-13 |
US20090321615A1 (en) | 2009-12-31 |
JP2007295189A (ja) | 2007-11-08 |
TW200803485A (en) | 2008-01-01 |
CN101433079B (zh) | 2011-09-14 |
EP2012529A4 (en) | 2011-08-24 |
US8119966B2 (en) | 2012-02-21 |
WO2007125865A1 (ja) | 2007-11-08 |
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