KR102583609B1 - 구리계 금속막용 식각액 조성물, 이를 이용한 표시장치용 어레이 기판의 제조방법 - Google Patents

구리계 금속막용 식각액 조성물, 이를 이용한 표시장치용 어레이 기판의 제조방법 Download PDF

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KR102583609B1
KR102583609B1 KR1020160094137A KR20160094137A KR102583609B1 KR 102583609 B1 KR102583609 B1 KR 102583609B1 KR 1020160094137 A KR1020160094137 A KR 1020160094137A KR 20160094137 A KR20160094137 A KR 20160094137A KR 102583609 B1 KR102583609 B1 KR 102583609B1
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South Korea
Prior art keywords
copper
film
based metal
metal film
etchant composition
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KR1020160094137A
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English (en)
Korean (ko)
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KR20170112886A (ko
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양승재
박승욱
이은원
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동우 화인켐 주식회사
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Priority to TW105131321A priority Critical patent/TWI596235B/zh
Priority to CN201610909052.XA priority patent/CN107236956B/zh
Publication of KR20170112886A publication Critical patent/KR20170112886A/ko
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Publication of KR102583609B1 publication Critical patent/KR102583609B1/ko

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/18Acidic compositions for etching copper or alloys thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/26Acidic compositions for etching refractory metals
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/32Alkaline compositions
    • C23F1/34Alkaline compositions for etching copper or alloys thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/32Alkaline compositions
    • C23F1/38Alkaline compositions for etching refractory metals
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020160094137A 2016-03-28 2016-07-25 구리계 금속막용 식각액 조성물, 이를 이용한 표시장치용 어레이 기판의 제조방법 KR102583609B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW105131321A TWI596235B (zh) 2016-03-28 2016-09-29 用於銅基金屬層的蝕刻劑組合物及用其製造顯示設備的陣列基板的方法
CN201610909052.XA CN107236956B (zh) 2016-03-28 2016-10-19 用于铜基金属层的蚀刻剂组合物及用其制造显示设备的阵列基板的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020160036816 2016-03-28
KR20160036816 2016-03-28

Publications (2)

Publication Number Publication Date
KR20170112886A KR20170112886A (ko) 2017-10-12
KR102583609B1 true KR102583609B1 (ko) 2023-10-06

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KR1020160094137A KR102583609B1 (ko) 2016-03-28 2016-07-25 구리계 금속막용 식각액 조성물, 이를 이용한 표시장치용 어레이 기판의 제조방법

Country Status (2)

Country Link
KR (1) KR102583609B1 (zh)
TW (1) TWI596235B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102343735B1 (ko) * 2018-03-09 2021-12-27 동우 화인켐 주식회사 구리계 금속막용 식각액 조성물, 이를 이용한 디스플레이용 어레이 기판의 제조방법, 및 디스플레이용 어레이 기판
KR102384565B1 (ko) * 2018-03-15 2022-04-08 동우 화인켐 주식회사 구리계 금속막용 식각 조성물
CN113122267A (zh) * 2019-12-31 2021-07-16 安集微电子科技(上海)股份有限公司 一种促进剂组合物在去除铜大马士革工艺中氮化钛的应用

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070055259A (ko) 2005-11-25 2007-05-30 동우 화인켐 주식회사 구리 몰리브덴합금막의 식각용액 및 그 식각방법
KR101475954B1 (ko) * 2008-11-04 2014-12-24 동우 화인켐 주식회사 액정표시장치용 어레이 기판의 제조 방법
JP6101421B2 (ja) * 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
JP5735811B2 (ja) * 2011-01-25 2015-06-17 関東化学株式会社 銅を主成分とする金属薄膜のエッチング液組成物
JP5933950B2 (ja) * 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド 銅または銅合金用エッチング液
US9012261B2 (en) * 2013-03-13 2015-04-21 Intermolecular, Inc. High productivity combinatorial screening for stable metal oxide TFTs
KR102258660B1 (ko) * 2013-09-17 2021-06-02 삼성전자주식회사 구리를 함유하는 금속의 식각에 사용되는 액체 조성물 및 이를 이용한 반도체 장치의 제조 방법
KR102092350B1 (ko) * 2013-10-18 2020-03-24 동우 화인켐 주식회사 액정표시장치용 어레이 기판의 제조방법

Also Published As

Publication number Publication date
TWI596235B (zh) 2017-08-21
TW201809355A (zh) 2018-03-16
KR20170112886A (ko) 2017-10-12

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