KR102547554B1 - 어레이 기반 특성화 툴 - Google Patents
어레이 기반 특성화 툴 Download PDFInfo
- Publication number
- KR102547554B1 KR102547554B1 KR1020207034236A KR20207034236A KR102547554B1 KR 102547554 B1 KR102547554 B1 KR 102547554B1 KR 1020207034236 A KR1020207034236 A KR 1020207034236A KR 20207034236 A KR20207034236 A KR 20207034236A KR 102547554 B1 KR102547554 B1 KR 102547554B1
- Authority
- KR
- South Korea
- Prior art keywords
- deflector
- electro
- optical
- electron
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012512 characterization method Methods 0.000 title claims description 84
- 238000010894 electron beam technology Methods 0.000 claims abstract description 163
- 230000004044 response Effects 0.000 claims abstract description 12
- 230000003287 optical effect Effects 0.000 claims description 127
- 238000004626 scanning electron microscopy Methods 0.000 claims description 57
- 230000005855 radiation Effects 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 21
- 230000003068 static effect Effects 0.000 claims description 10
- 238000000386 microscopy Methods 0.000 claims description 2
- 238000001493 electron microscopy Methods 0.000 claims 1
- 230000015654 memory Effects 0.000 description 19
- 238000010586 diagram Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 238000004891 communication Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 9
- 238000004590 computer program Methods 0.000 description 8
- 230000000670 limiting effect Effects 0.000 description 7
- 238000007689 inspection Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000004075 alteration Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 238000012552 review Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
- H01J37/1474—Scanning means
- H01J37/1477—Scanning means electrostatic
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/36—Microscopes arranged for photographic purposes or projection purposes or digital imaging or video purposes including associated control and data processing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/151—Electrostatic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/153—Correcting image defects, e.g. stigmators
- H01J2237/1534—Aberrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2448—Secondary particle detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2449—Detector devices with moving charges in electric or magnetic fields
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Electron Sources, Ion Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020237007799A KR102608083B1 (ko) | 2018-05-02 | 2019-04-30 | 어레이 기반 특성화 툴 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/969,555 | 2018-05-02 | ||
| US15/969,555 US10438769B1 (en) | 2018-05-02 | 2018-05-02 | Array-based characterization tool |
| PCT/US2019/029764 WO2019213000A1 (en) | 2018-05-02 | 2019-04-30 | Array-based characterization tool |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237007799A Division KR102608083B1 (ko) | 2018-05-02 | 2019-04-30 | 어레이 기반 특성화 툴 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20200139257A KR20200139257A (ko) | 2020-12-11 |
| KR102547554B1 true KR102547554B1 (ko) | 2023-06-23 |
Family
ID=68102068
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020207034236A Active KR102547554B1 (ko) | 2018-05-02 | 2019-04-30 | 어레이 기반 특성화 툴 |
| KR1020237007799A Active KR102608083B1 (ko) | 2018-05-02 | 2019-04-30 | 어레이 기반 특성화 툴 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237007799A Active KR102608083B1 (ko) | 2018-05-02 | 2019-04-30 | 어레이 기반 특성화 툴 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10438769B1 (https=) |
| EP (1) | EP3765886A4 (https=) |
| JP (3) | JP7271572B2 (https=) |
| KR (2) | KR102547554B1 (https=) |
| CN (2) | CN115047608A (https=) |
| TW (1) | TWI780324B (https=) |
| WO (1) | WO2019213000A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11239048B2 (en) * | 2020-03-09 | 2022-02-01 | Kla Corporation | Arrayed column detector |
| US20240021404A1 (en) * | 2020-12-10 | 2024-01-18 | Asml Netherlands B.V. | Charged-particle beam apparatus with beam-tilt and methods thereof |
| JP7680923B2 (ja) * | 2021-09-16 | 2025-05-21 | 株式会社ニューフレアテクノロジー | マルチ電子ビーム検査装置、多極子アレイの制御方法、及びマルチ電子ビーム検査方法 |
| US20250357071A1 (en) * | 2024-05-17 | 2025-11-20 | Fei Company | Scanning deflector |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020117967A1 (en) * | 2001-02-23 | 2002-08-29 | Gerlach Robert L. | Electron beam system using multiple electron beams |
| JP2010020919A (ja) * | 2008-07-08 | 2010-01-28 | Hitachi High-Technologies Corp | 検査装置 |
| JP2013097869A (ja) * | 2011-10-28 | 2013-05-20 | Ebara Corp | 試料観察装置及び試料観察方法 |
| US20180068825A1 (en) * | 2016-09-08 | 2018-03-08 | Kla-Tencor Corporation | Apparatus and Method for Correcting Arrayed Astigmatism in a Multi-Column Scanning Electron Microscopy System |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4390789A (en) * | 1981-05-21 | 1983-06-28 | Control Data Corporation | Electron beam array lithography system employing multiple parallel array optics channels and method of operation |
| JPS6293931A (ja) * | 1985-10-19 | 1987-04-30 | Nippon Telegr & Teleph Corp <Ntt> | 荷電ビ−ム露光装置 |
| EP0281743B1 (de) * | 1987-02-02 | 1994-03-30 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Detektorobjectiv für Rastermikroskope |
| US4926054A (en) * | 1988-03-17 | 1990-05-15 | Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh | Objective lens for focusing charged particles in an electron microscope |
| JP2775812B2 (ja) * | 1989-02-21 | 1998-07-16 | 株式会社ニコン | 荷電粒子線装置 |
| JP4215282B2 (ja) * | 1997-12-23 | 2009-01-28 | エフ イー アイ カンパニ | 静電対物レンズ及び電気走査装置を装備したsem |
| US6633034B1 (en) * | 2000-05-04 | 2003-10-14 | Applied Materials, Inc. | Method and apparatus for imaging a specimen using low profile electron detector for charged particle beam imaging apparatus including electrostatic mirrors |
| DE60105199T2 (de) | 2000-12-22 | 2005-08-11 | Fei Co., Hillsboro | Sem mit einem sekundärelektronendetektor mit einer zentralelektrode |
| US6750455B2 (en) | 2001-07-02 | 2004-06-15 | Applied Materials, Inc. | Method and apparatus for multiple charged particle beams |
| KR101057554B1 (ko) * | 2002-07-11 | 2011-08-17 | 어플라이드 머티리얼즈 이스라엘 리미티드 | 입자빔으로 임계 치수를 측정하기 위한 방법 및 장치 |
| CN101414534B (zh) * | 2002-10-30 | 2012-10-03 | 迈普尔平版印刷Ip有限公司 | 电子束曝光系统 |
| TWI323004B (en) * | 2005-12-15 | 2010-04-01 | Nuflare Technology Inc | Charged particle beam writing method and apparatus |
| JP4977509B2 (ja) * | 2007-03-26 | 2012-07-18 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡 |
| DE102008062450B4 (de) * | 2008-12-13 | 2012-05-03 | Vistec Electron Beam Gmbh | Anordnung zur Beleuchtung eines Substrats mit mehreren individuell geformten Partikelstrahlen zur hochauflösenden Lithographie von Strukturmustern |
| US8071942B2 (en) * | 2009-03-20 | 2011-12-06 | Physical Electronics USA, Inc. | Sample holder apparatus to reduce energy of electrons in an analyzer system and method |
| JP5934965B2 (ja) * | 2012-04-26 | 2016-06-15 | 国立研究開発法人理化学研究所 | 電子線装置 |
| US9105440B2 (en) * | 2013-08-30 | 2015-08-11 | Hermes Microvision, Inc. | Apparatus of plural charged particle beams with multi-axis magnetic lens |
| US9431209B2 (en) | 2014-08-26 | 2016-08-30 | Hermes-Microvision, Inc. | Apparatus of plural charged particle beams with multi-axis magnetic lenses |
| NL2013411B1 (en) * | 2014-09-04 | 2016-09-27 | Univ Delft Tech | Multi electron beam inspection apparatus. |
| CN111261481B (zh) * | 2015-03-24 | 2022-12-16 | 科磊股份有限公司 | 用于带电粒子显微镜的方法及系统 |
| WO2016182948A1 (en) * | 2015-05-08 | 2016-11-17 | Kla-Tencor Corporation | Method and system for aberration correction in electron beam system |
| US10366862B2 (en) * | 2015-09-21 | 2019-07-30 | KLA-Tencor Corporaton | Method and system for noise mitigation in a multi-beam scanning electron microscopy system |
| SG10201912510QA (en) * | 2015-09-23 | 2020-02-27 | Kla Tencor Corp | Method and system for focus adjustment a multi-beam scanning electron microscopy system |
| US10515778B2 (en) * | 2016-03-16 | 2019-12-24 | Ngr Inc. | Secondary particle detection system of scanning electron microscope |
| US10453645B2 (en) * | 2016-12-01 | 2019-10-22 | Applied Materials Israel Ltd. | Method for inspecting a specimen and charged particle multi-beam device |
-
2018
- 2018-05-02 US US15/969,555 patent/US10438769B1/en active Active
-
2019
- 2019-04-24 TW TW108114249A patent/TWI780324B/zh active
- 2019-04-30 KR KR1020207034236A patent/KR102547554B1/ko active Active
- 2019-04-30 CN CN202210723696.5A patent/CN115047608A/zh active Pending
- 2019-04-30 KR KR1020237007799A patent/KR102608083B1/ko active Active
- 2019-04-30 JP JP2020560344A patent/JP7271572B2/ja active Active
- 2019-04-30 CN CN201980029659.0A patent/CN112136070B/zh active Active
- 2019-04-30 EP EP19797080.9A patent/EP3765886A4/en active Pending
- 2019-04-30 WO PCT/US2019/029764 patent/WO2019213000A1/en not_active Ceased
-
2023
- 2023-01-18 JP JP2023005964A patent/JP2023033554A/ja active Pending
-
2025
- 2025-01-16 JP JP2025005928A patent/JP7745790B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020117967A1 (en) * | 2001-02-23 | 2002-08-29 | Gerlach Robert L. | Electron beam system using multiple electron beams |
| JP2010020919A (ja) * | 2008-07-08 | 2010-01-28 | Hitachi High-Technologies Corp | 検査装置 |
| JP2013097869A (ja) * | 2011-10-28 | 2013-05-20 | Ebara Corp | 試料観察装置及び試料観察方法 |
| US20180068825A1 (en) * | 2016-09-08 | 2018-03-08 | Kla-Tencor Corporation | Apparatus and Method for Correcting Arrayed Astigmatism in a Multi-Column Scanning Electron Microscopy System |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112136070B (zh) | 2022-06-10 |
| EP3765886A1 (en) | 2021-01-20 |
| KR20200139257A (ko) | 2020-12-11 |
| KR102608083B1 (ko) | 2023-11-29 |
| JP2023033554A (ja) | 2023-03-10 |
| KR20230037694A (ko) | 2023-03-16 |
| CN112136070A (zh) | 2020-12-25 |
| EP3765886A4 (en) | 2022-11-09 |
| TW202001970A (zh) | 2020-01-01 |
| US10438769B1 (en) | 2019-10-08 |
| WO2019213000A1 (en) | 2019-11-07 |
| JP7271572B2 (ja) | 2023-05-11 |
| CN115047608A (zh) | 2022-09-13 |
| JP2025061364A (ja) | 2025-04-10 |
| JP7745790B2 (ja) | 2025-09-29 |
| JP2021522659A (ja) | 2021-08-30 |
| TWI780324B (zh) | 2022-10-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7745790B2 (ja) | 走査型電子顕微法システム | |
| US12033830B2 (en) | Multiple charged-particle beam apparatus with low crosstalk | |
| KR102445994B1 (ko) | 다중-빔 입자 검출기를 위한 위치 피드백 | |
| JP7308981B2 (ja) | マルチ荷電粒子ビーム装置及びその動作方法 | |
| TWI720154B (zh) | 用於基於電子束之特徵工具之漂移補償之系統及方法 | |
| JP2019526912A (ja) | マルチカラム走査電子顕微鏡法システムにおけるアレイ型非点収差を修正するための装置及び方法 | |
| KR102479089B1 (ko) | 미러 기반 광 이미징 대전 입자 현미경에서의 se 검출 향상을 위한 방법 및 장치 | |
| JP7271704B2 (ja) | シングルビームモードを備えたマルチビーム検査装置 | |
| TWI742240B (zh) | 掃描電子顯微鏡系統及製作一半導體裝置之方法 | |
| JP7432759B2 (ja) | 電子ビーム検査システム | |
| KR20220103765A (ko) | 낮은 누화를 갖는 다중 하전 입자 빔 장치 | |
| TW202300906A (zh) | 資料處理裝置及方法以及帶電粒子評估系統及方法 | |
| JP7592956B2 (ja) | ローレンツem用補正器転送光学系 | |
| JP2023516114A (ja) | マルチビーム検査システム用のビーム・アレイ・ジオメトリ最適化装置 | |
| KR102936003B1 (ko) | 설계 보조 광시야 계측 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20201127 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20220419 Comment text: Request for Examination of Application |
|
| PA0302 | Request for accelerated examination |
Patent event date: 20220419 Patent event code: PA03022R01D Comment text: Request for Accelerated Examination |
|
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20220917 Patent event code: PE09021S01D |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20230114 Patent event code: PE09021S01D |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20230406 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20230621 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 20230621 End annual number: 3 Start annual number: 1 |
|
| PG1601 | Publication of registration |