KR102526216B1 - 반도체 장치, 표시 장치, 및 상기 표시 장치를 사용한 전자 기기 - Google Patents

반도체 장치, 표시 장치, 및 상기 표시 장치를 사용한 전자 기기 Download PDF

Info

Publication number
KR102526216B1
KR102526216B1 KR1020160024973A KR20160024973A KR102526216B1 KR 102526216 B1 KR102526216 B1 KR 102526216B1 KR 1020160024973 A KR1020160024973 A KR 1020160024973A KR 20160024973 A KR20160024973 A KR 20160024973A KR 102526216 B1 KR102526216 B1 KR 102526216B1
Authority
KR
South Korea
Prior art keywords
film
oxide semiconductor
insulating film
semiconductor film
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020160024973A
Other languages
English (en)
Korean (ko)
Other versions
KR20160107110A (ko
Inventor
겐이치 오카자키
마사미 진쵸
다카히로 이구치
야스하루 호사카
준이치 고에즈카
히로유키 미야케
순페이 야마자키
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20160107110A publication Critical patent/KR20160107110A/ko
Application granted granted Critical
Publication of KR102526216B1 publication Critical patent/KR102526216B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L29/7869—
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H01L29/78606—
    • H01L29/78618—
    • H01L29/78639—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
KR1020160024973A 2015-03-03 2016-03-02 반도체 장치, 표시 장치, 및 상기 표시 장치를 사용한 전자 기기 Active KR102526216B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2015-040972 2015-03-03
JP2015040972 2015-03-03

Publications (2)

Publication Number Publication Date
KR20160107110A KR20160107110A (ko) 2016-09-13
KR102526216B1 true KR102526216B1 (ko) 2023-04-28

Family

ID=56850746

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160024973A Active KR102526216B1 (ko) 2015-03-03 2016-03-02 반도체 장치, 표시 장치, 및 상기 표시 장치를 사용한 전자 기기

Country Status (4)

Country Link
US (2) US20160260751A1 (enExample)
JP (4) JP6801969B2 (enExample)
KR (1) KR102526216B1 (enExample)
TW (1) TWI686870B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9964799B2 (en) 2015-03-17 2018-05-08 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, and electronic device
KR102662057B1 (ko) * 2016-10-07 2024-05-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
US10692994B2 (en) * 2016-12-23 2020-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102746042B1 (ko) * 2018-01-05 2024-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 표시 모듈, 및 전자 기기
US20210193049A1 (en) * 2019-12-23 2021-06-24 Apple Inc. Electronic Display with In-Pixel Compensation and Oxide Drive Transistors
KR102740671B1 (ko) 2020-04-17 2024-12-10 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013149970A (ja) 2011-12-22 2013-08-01 Semiconductor Energy Lab Co Ltd 半導体記憶装置
JP2013243349A (ja) 2012-04-25 2013-12-05 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US20160190149A1 (en) 2010-02-19 2016-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5013139A (en) * 1989-10-30 1991-05-07 General Electric Company Alignment layer for liquid crystal devices and method of forming
KR101056013B1 (ko) * 2004-08-03 2011-08-10 엘지디스플레이 주식회사 액정표시장치용 어레이기판 제조방법
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
WO2007088644A1 (en) * 2006-01-31 2007-08-09 Casio Computer Co., Ltd. Liquid crystal display apparatus using an electric field substantially parallel to the substrate surfaces
JP5167780B2 (ja) * 2007-03-13 2013-03-21 セイコーエプソン株式会社 電界駆動型装置及び電子機器
KR101310473B1 (ko) * 2008-10-24 2013-09-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101074788B1 (ko) * 2009-01-30 2011-10-20 삼성모바일디스플레이주식회사 평판 표시 장치 및 이의 제조 방법
KR101460868B1 (ko) * 2009-07-10 2014-11-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011027676A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011027664A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
KR101746198B1 (ko) * 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 전자기기
KR102321812B1 (ko) * 2009-10-29 2021-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20120106786A (ko) * 2009-12-08 2012-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101403409B1 (ko) * 2010-04-28 2014-06-03 한국전자통신연구원 반도체 장치 및 그 제조 방법
US8547503B2 (en) * 2010-05-20 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having a pixel electrode layer positioned between first and second common electrode layers
JP2012033836A (ja) * 2010-08-03 2012-02-16 Canon Inc トップゲート型薄膜トランジスタ及びこれを備えた表示装置
US8936965B2 (en) * 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6111398B2 (ja) * 2011-12-20 2017-04-12 株式会社Ｊｏｌｅｄ 表示装置および電子機器
JP2015163908A (ja) * 2012-06-21 2015-09-10 シャープ株式会社 液晶表示装置
KR102213518B1 (ko) * 2012-06-29 2021-02-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20250175003A (ko) * 2012-07-20 2025-12-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP2014089444A (ja) * 2012-10-05 2014-05-15 Semiconductor Energy Lab Co Ltd 表示装置及び電子機器
JP6248941B2 (ja) * 2012-10-17 2017-12-20 株式会社Ｊｏｌｅｄ Ｅｌ表示装置
JP6329762B2 (ja) * 2012-12-28 2018-05-23 株式会社半導体エネルギー研究所 半導体装置
TWI687748B (zh) * 2013-06-05 2020-03-11 日商半導體能源研究所股份有限公司 顯示裝置及電子裝置
JP6426379B2 (ja) * 2013-06-19 2018-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102166107B1 (ko) * 2014-05-13 2020-10-16 엘지디스플레이 주식회사 프린지 필드형 액정표시장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160190149A1 (en) 2010-02-19 2016-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013149970A (ja) 2011-12-22 2013-08-01 Semiconductor Energy Lab Co Ltd 半導体記憶装置
JP2013243349A (ja) 2012-04-25 2013-12-05 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Also Published As

Publication number Publication date
JP2016167585A (ja) 2016-09-15
JP2022171665A (ja) 2022-11-11
JP2025027011A (ja) 2025-02-26
US20160260751A1 (en) 2016-09-08
TWI686870B (zh) 2020-03-01
US20220013545A1 (en) 2022-01-13
TW201637100A (zh) 2016-10-16
KR20160107110A (ko) 2016-09-13
JP6801969B2 (ja) 2020-12-16
JP2021048403A (ja) 2021-03-25

Similar Documents

Publication Publication Date Title
JP7223807B2 (ja) 液晶表示装置
JP7640786B2 (ja) 半導体装置
KR102619052B1 (ko) 표시 장치
TWI734687B (zh) 輸入輸出裝置及電子裝置
JP2023052283A (ja) 半導体装置の作製方法
JP6910758B2 (ja) 表示装置、表示モジュール、及び電子機器
KR102526216B1 (ko) 반도체 장치, 표시 장치, 및 상기 표시 장치를 사용한 전자 기기
JP7793737B2 (ja) 表示装置
JP2024116240A (ja) 発光装置
TW201724194A (zh) 半導體裝置的製造方法
KR102548267B1 (ko) 액정 표시 장치 및 전자 기기
JP2016218211A (ja) 表示装置、該表示装置を有する表示モジュール、及び該表示装置または該表示モジュールを有する電子機器

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20160302

PG1501 Laying open of application
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20210302

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20160302

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20220729

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20230131

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20230424

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20230425

End annual number: 3

Start annual number: 1

PG1601 Publication of registration