KR102509764B1 - 반도체 디바이스에서의 파라미터-안정적 오정렬 측정 개선 - Google Patents

반도체 디바이스에서의 파라미터-안정적 오정렬 측정 개선 Download PDF

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KR102509764B1
KR102509764B1 KR1020217033551A KR20217033551A KR102509764B1 KR 102509764 B1 KR102509764 B1 KR 102509764B1 KR 1020217033551 A KR1020217033551 A KR 1020217033551A KR 20217033551 A KR20217033551 A KR 20217033551A KR 102509764 B1 KR102509764 B1 KR 102509764B1
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misalignment
measurement
sets
wafer
data
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KR20210134045A (ko
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블라디미르 레빈스키
유리 파스코버
샤론 아하론
암논 마나쎈
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H01L22/12—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H01L21/67242—
    • H01L22/24—
    • H01L22/26—
    • H01L22/30—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Manufacturing & Machinery (AREA)
KR1020217033551A 2019-03-21 2019-08-23 반도체 디바이스에서의 파라미터-안정적 오정렬 측정 개선 Active KR102509764B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962821596P 2019-03-21 2019-03-21
US62/821,596 2019-03-21
PCT/US2019/047797 WO2020190318A1 (en) 2019-03-21 2019-08-23 Parameter-stable misregistration measurement amelioration in semiconductor devices

Publications (2)

Publication Number Publication Date
KR20210134045A KR20210134045A (ko) 2021-11-08
KR102509764B1 true KR102509764B1 (ko) 2023-03-14

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KR1020217033551A Active KR102509764B1 (ko) 2019-03-21 2019-08-23 반도체 디바이스에서의 파라미터-안정적 오정렬 측정 개선

Country Status (6)

Country Link
US (1) US11101153B2 (https=)
JP (1) JP7177949B2 (https=)
KR (1) KR102509764B1 (https=)
CN (1) CN113574643B (https=)
TW (1) TWI845639B (https=)
WO (1) WO2020190318A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102817032B1 (ko) 2020-04-05 2025-06-04 케이엘에이 코포레이션 웨이퍼 틸트가 오정합 측정에 끼친 영향을 보정하기 시스템 및 방법
US12165930B2 (en) 2021-06-03 2024-12-10 Kla Corporation Adaptive modeling misregistration measurement system and method
TWI833185B (zh) * 2022-01-04 2024-02-21 南亞科技股份有限公司 疊置誤差的校正方法及半導體元件的製備方法
US12002765B2 (en) 2022-01-04 2024-06-04 Nanya Technology Corporation Marks for overlay measurement and overlay error correction
US11796924B2 (en) 2022-01-04 2023-10-24 Nanya Technology Corporation Method for overlay error correction and method for manufacturing a semiconductor device structure with overlay marks
US12487533B2 (en) 2024-01-25 2025-12-02 Kla Corporation Amplitude asymmetry measurements in overlay metrology

Citations (2)

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US20090063378A1 (en) 2007-08-31 2009-03-05 Kla-Tencor Technologies Corporation Apparatus and methods for predicting a semiconductor parameter across an area of a wafer
US20130096876A1 (en) 2007-07-11 2013-04-18 Nova Measuring Instruments Ltd. Method and system for use in monitoring properties of patterned structures

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US6064486A (en) * 1998-05-21 2000-05-16 Leland Stanford Junior University Systems, methods and computer program products for detecting the position of a new alignment mark on a substrate based on fitting to sample alignment signals
US6281027B1 (en) * 1999-09-15 2001-08-28 Therma-Wave Inc Spatial averaging technique for ellipsometry and reflectometry
US6462818B1 (en) * 2000-06-22 2002-10-08 Kla-Tencor Corporation Overlay alignment mark design
TW569368B (en) * 2001-11-14 2004-01-01 Tokyo Electron Ltd Substrate inspecting apparatus, coating and developing apparatus, and substrate inspecting method
EP1512112A4 (en) * 2002-06-05 2006-11-02 Kla Tencor Tech Corp USE OF OVERLAY DIAGNOSIS FOR ADVANCED AUTOMATIC PROCESS CONTROL
JP4072465B2 (ja) * 2003-06-19 2008-04-09 キヤノン株式会社 位置検出方法
WO2005098686A2 (en) * 2004-04-02 2005-10-20 Clear Shape Technologies, Inc. Modeling resolution enhancement processes in integrated circuit fabrication
US20070099097A1 (en) * 2005-11-03 2007-05-03 Samsung Electronics Co., Ltd. Multi-purpose measurement marks for semiconductor devices, and methods, systems and computer program products for using same
CN101063661B (zh) * 2006-04-29 2010-05-12 中芯国际集成电路制造(上海)有限公司 利用微影区域迭对测量仪监控硅单晶外延层层错状况的方法
US8214771B2 (en) * 2009-01-08 2012-07-03 Kla-Tencor Corporation Scatterometry metrology target design optimization
CN105074896B (zh) * 2013-02-20 2018-04-27 株式会社日立高新技术 图案测定装置以及半导体测量系统
US10296554B2 (en) * 2013-03-01 2019-05-21 Nanometrics Incorporated Correction of angular error of plane-of-incidence azimuth of optical metrology device
CN103398666B (zh) * 2013-05-27 2015-12-23 电子科技大学 一种用于双层周期性微结构的层间错位测试方法
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TWI715582B (zh) * 2015-05-19 2021-01-11 美商克萊譚克公司 用於疊對測量之形貌相位控制
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US20130096876A1 (en) 2007-07-11 2013-04-18 Nova Measuring Instruments Ltd. Method and system for use in monitoring properties of patterned structures
US20090063378A1 (en) 2007-08-31 2009-03-05 Kla-Tencor Technologies Corporation Apparatus and methods for predicting a semiconductor parameter across an area of a wafer

Also Published As

Publication number Publication date
TWI845639B (zh) 2024-06-21
JP2022526748A (ja) 2022-05-26
WO2020190318A1 (en) 2020-09-24
CN113574643A (zh) 2021-10-29
JP7177949B2 (ja) 2022-11-24
CN113574643B (zh) 2024-12-03
US20210020480A1 (en) 2021-01-21
TW202043750A (zh) 2020-12-01
US11101153B2 (en) 2021-08-24
KR20210134045A (ko) 2021-11-08

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