JP7177949B2 - 半導体デバイスにおけるパラメタ安定位置ずれ計測改善 - Google Patents

半導体デバイスにおけるパラメタ安定位置ずれ計測改善 Download PDF

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JP7177949B2
JP7177949B2 JP2021556496A JP2021556496A JP7177949B2 JP 7177949 B2 JP7177949 B2 JP 7177949B2 JP 2021556496 A JP2021556496 A JP 2021556496A JP 2021556496 A JP2021556496 A JP 2021556496A JP 7177949 B2 JP7177949 B2 JP 7177949B2
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misalignment
parameter
measurement
stable
wafer
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JP2022526748A (ja
JPWO2020190318A5 (https=
JP2022526748A5 (https=
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ヴラディミール レヴィンスキー
ユーリ パスコバー
シャロン アーロン
アムノン マナッセン
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KLA Corp
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KLA Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Manufacturing & Machinery (AREA)
JP2021556496A 2019-03-21 2019-08-23 半導体デバイスにおけるパラメタ安定位置ずれ計測改善 Active JP7177949B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962821596P 2019-03-21 2019-03-21
US62/821,596 2019-03-21
PCT/US2019/047797 WO2020190318A1 (en) 2019-03-21 2019-08-23 Parameter-stable misregistration measurement amelioration in semiconductor devices

Publications (4)

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JP2022526748A JP2022526748A (ja) 2022-05-26
JPWO2020190318A5 JPWO2020190318A5 (https=) 2022-08-25
JP2022526748A5 JP2022526748A5 (https=) 2022-08-25
JP7177949B2 true JP7177949B2 (ja) 2022-11-24

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JP2021556496A Active JP7177949B2 (ja) 2019-03-21 2019-08-23 半導体デバイスにおけるパラメタ安定位置ずれ計測改善

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Country Link
US (1) US11101153B2 (https=)
JP (1) JP7177949B2 (https=)
KR (1) KR102509764B1 (https=)
CN (1) CN113574643B (https=)
TW (1) TWI845639B (https=)
WO (1) WO2020190318A1 (https=)

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KR102817032B1 (ko) 2020-04-05 2025-06-04 케이엘에이 코포레이션 웨이퍼 틸트가 오정합 측정에 끼친 영향을 보정하기 시스템 및 방법
US12165930B2 (en) 2021-06-03 2024-12-10 Kla Corporation Adaptive modeling misregistration measurement system and method
TWI833185B (zh) * 2022-01-04 2024-02-21 南亞科技股份有限公司 疊置誤差的校正方法及半導體元件的製備方法
US12002765B2 (en) 2022-01-04 2024-06-04 Nanya Technology Corporation Marks for overlay measurement and overlay error correction
US11796924B2 (en) 2022-01-04 2023-10-24 Nanya Technology Corporation Method for overlay error correction and method for manufacturing a semiconductor device structure with overlay marks
US12487533B2 (en) 2024-01-25 2025-12-02 Kla Corporation Amplitude asymmetry measurements in overlay metrology

Citations (3)

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Publication number Priority date Publication date Assignee Title
WO2003043064A1 (fr) 2001-11-14 2003-05-22 Tokyo Electron Limited Dispositif de controle d'un substrat, dispositif de revetement/mise au point, et dispositif de controle d'un substrat
JP2005529488A (ja) 2002-06-05 2005-09-29 ケーエルエー−テンカー テクノロジィース コーポレイション 向上された自動プロセス制御のためのオーバレイ診断の利用
JP2010538474A (ja) 2007-08-31 2010-12-09 ケーエルエー−テンカー・コーポレーション ウエハの領域全体の半導体パラメータを予測するための装置および方法

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US6281027B1 (en) * 1999-09-15 2001-08-28 Therma-Wave Inc Spatial averaging technique for ellipsometry and reflectometry
US6462818B1 (en) * 2000-06-22 2002-10-08 Kla-Tencor Corporation Overlay alignment mark design
JP4072465B2 (ja) * 2003-06-19 2008-04-09 キヤノン株式会社 位置検出方法
WO2005098686A2 (en) * 2004-04-02 2005-10-20 Clear Shape Technologies, Inc. Modeling resolution enhancement processes in integrated circuit fabrication
US20070099097A1 (en) * 2005-11-03 2007-05-03 Samsung Electronics Co., Ltd. Multi-purpose measurement marks for semiconductor devices, and methods, systems and computer program products for using same
CN101063661B (zh) * 2006-04-29 2010-05-12 中芯国际集成电路制造(上海)有限公司 利用微影区域迭对测量仪监控硅单晶外延层层错状况的方法
TWI416096B (zh) * 2007-07-11 2013-11-21 Nova Measuring Instr Ltd 用於監控圖案化結構的性質之方法及系統
US8214771B2 (en) * 2009-01-08 2012-07-03 Kla-Tencor Corporation Scatterometry metrology target design optimization
CN105074896B (zh) * 2013-02-20 2018-04-27 株式会社日立高新技术 图案测定装置以及半导体测量系统
US10296554B2 (en) * 2013-03-01 2019-05-21 Nanometrics Incorporated Correction of angular error of plane-of-incidence azimuth of optical metrology device
CN103398666B (zh) * 2013-05-27 2015-12-23 电子科技大学 一种用于双层周期性微结构的层间错位测试方法
US9383661B2 (en) * 2013-08-10 2016-07-05 Kla-Tencor Corporation Methods and apparatus for determining focus
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TWI715582B (zh) * 2015-05-19 2021-01-11 美商克萊譚克公司 用於疊對測量之形貌相位控制
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WO2003043064A1 (fr) 2001-11-14 2003-05-22 Tokyo Electron Limited Dispositif de controle d'un substrat, dispositif de revetement/mise au point, et dispositif de controle d'un substrat
JP2005529488A (ja) 2002-06-05 2005-09-29 ケーエルエー−テンカー テクノロジィース コーポレイション 向上された自動プロセス制御のためのオーバレイ診断の利用
JP2010538474A (ja) 2007-08-31 2010-12-09 ケーエルエー−テンカー・コーポレーション ウエハの領域全体の半導体パラメータを予測するための装置および方法

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TWI845639B (zh) 2024-06-21
JP2022526748A (ja) 2022-05-26
KR102509764B1 (ko) 2023-03-14
WO2020190318A1 (en) 2020-09-24
CN113574643A (zh) 2021-10-29
CN113574643B (zh) 2024-12-03
US20210020480A1 (en) 2021-01-21
TW202043750A (zh) 2020-12-01
US11101153B2 (en) 2021-08-24
KR20210134045A (ko) 2021-11-08

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