TWI845639B - 半導體裝置中參數穩定之錯位測量改善 - Google Patents

半導體裝置中參數穩定之錯位測量改善 Download PDF

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Publication number
TWI845639B
TWI845639B TW109108584A TW109108584A TWI845639B TW I845639 B TWI845639 B TW I845639B TW 109108584 A TW109108584 A TW 109108584A TW 109108584 A TW109108584 A TW 109108584A TW I845639 B TWI845639 B TW I845639B
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Taiwan
Prior art keywords
misalignment
parameter
measurement
stable
data
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TW109108584A
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English (en)
Chinese (zh)
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TW202043750A (zh
Inventor
維拉得摩 朗維司基
尤瑞 帕斯卡維爾
夏倫 雅哈崙
阿農 馬那森
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美商科磊股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Manufacturing & Machinery (AREA)
TW109108584A 2019-03-21 2020-03-16 半導體裝置中參數穩定之錯位測量改善 TWI845639B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962821596P 2019-03-21 2019-03-21
US62/821,596 2019-03-21
WOPCT/US19/47797 2019-08-23
PCT/US2019/047797 WO2020190318A1 (en) 2019-03-21 2019-08-23 Parameter-stable misregistration measurement amelioration in semiconductor devices

Publications (2)

Publication Number Publication Date
TW202043750A TW202043750A (zh) 2020-12-01
TWI845639B true TWI845639B (zh) 2024-06-21

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TW109108584A TWI845639B (zh) 2019-03-21 2020-03-16 半導體裝置中參數穩定之錯位測量改善

Country Status (6)

Country Link
US (1) US11101153B2 (https=)
JP (1) JP7177949B2 (https=)
KR (1) KR102509764B1 (https=)
CN (1) CN113574643B (https=)
TW (1) TWI845639B (https=)
WO (1) WO2020190318A1 (https=)

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KR102817032B1 (ko) 2020-04-05 2025-06-04 케이엘에이 코포레이션 웨이퍼 틸트가 오정합 측정에 끼친 영향을 보정하기 시스템 및 방법
US12165930B2 (en) 2021-06-03 2024-12-10 Kla Corporation Adaptive modeling misregistration measurement system and method
TWI833185B (zh) * 2022-01-04 2024-02-21 南亞科技股份有限公司 疊置誤差的校正方法及半導體元件的製備方法
US12002765B2 (en) 2022-01-04 2024-06-04 Nanya Technology Corporation Marks for overlay measurement and overlay error correction
US11796924B2 (en) 2022-01-04 2023-10-24 Nanya Technology Corporation Method for overlay error correction and method for manufacturing a semiconductor device structure with overlay marks
US12487533B2 (en) 2024-01-25 2025-12-02 Kla Corporation Amplitude asymmetry measurements in overlay metrology

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CN101063661A (zh) * 2006-04-29 2007-10-31 中芯国际集成电路制造(上海)有限公司 利用微影区域迭对测量仪监控硅单晶外延层层错状况的方法
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Also Published As

Publication number Publication date
JP2022526748A (ja) 2022-05-26
KR102509764B1 (ko) 2023-03-14
WO2020190318A1 (en) 2020-09-24
CN113574643A (zh) 2021-10-29
JP7177949B2 (ja) 2022-11-24
CN113574643B (zh) 2024-12-03
US20210020480A1 (en) 2021-01-21
TW202043750A (zh) 2020-12-01
US11101153B2 (en) 2021-08-24
KR20210134045A (ko) 2021-11-08

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