KR102502200B1 - Flexible Copper Clad Laminate Capable of Preventing Open/Short Circuit and Method for Manufacturing The Same - Google Patents

Abstract

Disclosed are a flexible copper clad laminated film capable of preventing disconnection and/or short circuiting of a circuit by ensuring uniform chemical polishing and a manufacturing method thereof. The flexible copper clad laminate film of the present invention includes a non-conductive polymer substrate, a tie coat layer on the non-conductive polymer substrate, and a copper layer on the tie coat layer. When chemical polishing is performed to reduce the thickness of the copper layer by 1 to 2 μm, the polished copper layer has a surface roughness (Rz) of 0.1 to 0.15 μm and an ND direction average copper grain of 2 μm or less.

Description

Flexible Copper Clad Laminate Capable of Preventing Open/Short Circuit and Method for Manufacturing The Same}

The present invention relates to a flexible copper clad laminated film and a manufacturing method thereof, and more particularly, to a flexible copper clad laminate film capable of preventing disconnection and/or short circuiting of a circuit and a manufacturing method thereof.

As electronic devices such as notebook computers, mobile phones, PDAs, small video cameras, and electronic notebooks are becoming smaller and lighter, flexible printed circuit boards (Flexible Printed Circuit Boards) that can be applied to TAB (Tape Automated Bonding) and COF (Chip On Film) : Demand for FPCB) is increasing. Accordingly, demand for flexible copper clad laminate (FCCL) used in FPCB manufacturing is also increasing.

The flexible copper-clad laminate film is a laminate of a non-conductive polymer film and a copper layer, and a flexible printed circuit board can be obtained by selectively removing the copper layer of the flexible copper-clad laminate film to form a predetermined circuit pattern on the non-conductive polymer film.

The flexible copper clad laminated film may be formed by i) forming a non-conductive polymer film on the copper foil through a coating or laminating process after manufacturing the copper foil, or ii) depositing copper on the non-conductive polymer film. The latter manufacturing method is advantageous compared to the former manufacturing method in that it enables the formation of a very thin copper layer.

Methods of forming a circuit pattern using the flexible copper clad laminated film include i) a subtractive method in which an initial copper layer having a relatively thick thickness is formed and then the remaining parts other than circuit wiring are removed, and ii) a relative There is a semi-additive method in which a thin initial copper layer is formed and then copper plating (hereinafter referred to as 'copper pattern plating') is additionally performed on a region corresponding to the circuit wiring.

The semi-additive method is preferred over the subtractive method in that it can implement a narrower pitch.

In the semi-additive method, a chemical polishing process for reducing the thickness of the copper layer formed on the non-conductive polymer film needs to be performed.

However, since the polishing rate is not uniform over the entire surface of the copper layer when the chemical polishing process is performed, irregularities are formed on the surface of the copper layer in some areas of the copper layer. The irregularities formed on the surface of the copper layer cause non-uniformity of copper pattern plating.

Due to the non-uniformity of the copper pattern plating, a portion of the copper layer to be removed during circuit pattern formation is not completely removed and a portion of the copper layer remains, causing a circuit short circuit, or a circuit pattern is formed by removing a portion of the copper layer to remain during circuit pattern formation. A disconnection is caused.

A short circuit or disconnection of such a circuit reduces the yield and reliability of the flexible printed circuit board (FPCB) itself as well as electronic devices to which it is applied.

Accordingly, the present invention relates to a flexible copper clad laminated film and a manufacturing method thereof capable of preventing problems caused by the limitations and disadvantages of the above related technologies.

One aspect of the present invention is to provide a flexible copper clad laminate film capable of preventing circuit disconnection and/or short circuit by ensuring uniform chemical polishing.

Another aspect of the present invention is to provide a method for manufacturing a flexible copper clad laminate that can prevent circuit disconnection and/or short circuit by ensuring uniform chemical polishing.

In addition to the aspects of the present invention mentioned above, other features and advantages of the present invention will be described below, or will be clearly understood by those skilled in the art from such description.

According to one aspect of the present invention as above, a non-conductive polymer substrate having a first surface and a second surface opposite thereto; a first tiecoat layer on the first side of the non-conductive polymer substrate; and a first copper layer on the first tie coat layer, wherein, when chemical polishing is performed to reduce the thickness of the first copper layer by 1 to 2 μm, the polished first copper layer has a thickness of 0.1 μm. Provided is a flexible copper clad laminated film characterized in that it has a surface roughness (Rz) of 0.15 μm to 2 μm or less and an average copper grain size in a normal direction (ND) direction of 2 μm or less.

According to another aspect of the present invention, preparing a non-conductive polymer substrate; Forming a tie coat layer on at least one surface of the non-conductive polymer substrate; Forming a copper seed layer on the tie coat layer through a sputtering process; and forming a copper plating layer on the copper seed layer, wherein the non-conductive polymer substrate on which the tie coat layer and the copper seed layer are formed is sequentially passed through a plurality of plating baths (multistage electroplating). The copper plating layer is formed through electrolytic plating), the current density applied in each of the plating baths is 0.5 to 3 ASD, and the maximum current density among the current densities applied in the plating baths is 2.8 to 3 ASD. A method for producing a flexible copper clad laminated film is provided, characterized in that the temperature of the electrolyte solution in the plating baths is maintained at 34 to 36 ° C.

The general description of the present invention as above is only for exemplifying or explaining the present invention, and does not limit the scope of the present invention.

According to the present invention, by manufacturing a flexible printed circuit board through a semi-additive method, a circuit pattern with a narrower pitch can be implemented, and the product defect rate due to circuit disconnection and/or short circuit can be minimized, thereby improving the quality of the product. Productivity and reliability can be improved.

The accompanying drawings are intended to aid understanding of the present invention and constitute a part of this specification, illustrate embodiments of the present invention, and explain the principles of the present invention together with the detailed description of the invention.
1 is a cross-sectional view of a flexible copper clad laminated film according to an embodiment of the present invention;
2 is a cross-sectional view of a flexible copper clad laminated film according to another embodiment of the present invention;
3 to 6 are cross-sectional views showing a method of manufacturing a flexible copper clad laminated film according to an embodiment of the present invention,
7 to 12 are cross-sectional views showing a method of manufacturing a flexible printed circuit board according to an embodiment of the present invention,
13a and 13b are photographs showing EBSD measurement results of Example 1 and Comparative Example 1, respectively.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

It will be apparent to those skilled in the art that various changes and modifications of the present invention are possible without departing from the spirit and scope of the present invention. Accordingly, the present invention includes all modifications and variations falling within the scope of the invention described in the claims and equivalents thereof.

1 is a cross-sectional view of a flexible copper clad laminated film according to an embodiment of the present invention.

As illustrated in FIG. 1, the flexible copper clad laminated film 100 of the present invention includes a nonconductive polymer substrate 110 having a first surface and a second surface opposite thereto, the nonconductive polymer substrate ( 110) on the first side of the tie coat layer 120, and the first copper layer 130 on the first tie coat layer 120.

The non-conductive polymer substrate 110 may include polyimide, and has a thickness of 10 to 40 μm to enable the use of roll-to-roll equipment and to impart flexibility to the flexible copper clad laminated film 100. may have a thickness of

The first tie coat layer 120 is interposed between the non-conductive polymer substrate 110 made of different materials and the first copper layer 130 to improve adhesion between them, and nickel (Ni), chromium ( Cr), molybdenum (Mo), niobium (Nb), iron (Fe), or a mixture of two or more thereof.

According to one embodiment of the present invention, the first tie coat layer 120 is a nickel alloy. For example, the first tie coat layer 120 may include nickel and chromium, and the amount of chromium in the first tie coat layer 120 may be 5 to 25% by weight. If the chromium content is out of the above range, a desired level of interfacial adhesion between the non-conductive polymer substrate 110 and the first copper layer 130 cannot be secured.

According to one embodiment of the present invention, the first tie coat layer 120 has a thickness of 150 to 300 Å. If the thickness is less than 150 Å, a desired level of interfacial adhesion between the non-conductive polymer substrate 110 and the first copper layer 130 cannot be secured, and if the thickness exceeds 300 Å, etching during subsequent circuit pattern formation The risk that the part to be made remains without being etched increases.

As illustrated in FIG. 1 , the first copper layer 130 includes the first copper seed layer 131 on the first tie coat layer 120 and the first copper seed layer 131 on the first copper layer 131 . A plating layer 132 may be included.

The first copper seed layer 131 may be formed to have a thickness of 500 to 1,500 Å through a sputtering process, and the first copper plating layer 132 may be formed to have a thickness of 1.8 to 2.4 μm through an electroplating process. It can be. The first copper seed layer 131 functions as an electric wire when an electroplating process is performed using roll-to-roll equipment.

The flexible copper clad laminated film 100 of the present invention may further include a protective layer (not shown) on the first copper layer 130 . The protective layer is to prevent oxidation and corrosion of the first copper layer 130 and may be formed of an organic material.

The flexible copper clad laminated film 100 of the present invention is intended to be applied to the manufacture of a flexible printed circuit board by a semi-additive method. According to the semi-additive method, a copper pattern layer is additionally formed through electroplating only on regions corresponding to circuit wiring among the first copper layer 130 . Therefore, before performing this additional plating process, a process of forming a pattern for preventing plating, for example, a photosensitive pattern, is required on regions where the copper pattern layer is not to be formed.

If the adhesive force between the photosensitive pattern and the first copper layer 130 is insufficient, there is a risk that the photosensitive pattern may completely or partially peel off from the first copper layer 130 . Separation of the photosensitive pattern and the first copper layer 130 causes a copper pattern layer to be formed at an unwanted location when the additional plating process for forming the fine circuit pattern is performed.

Accordingly, in order to improve adhesion between the photosensitive pattern and the first copper layer 130, the first copper layer 130 is chemically polished before forming the photosensitive pattern on the first copper layer 130. do

As described above, since the polishing speed is not uniform over the entire surface of the first copper layer 130 when the chemical polishing process is performed, irregularities are formed in some areas of the first copper layer 130. is caused The irregularities formed on the surface of the first copper layer 130 cause unevenness in electroplating for forming the copper pattern layer. Due to the non-uniformity of the electroplating, a portion of the copper layer to be removed during circuit pattern formation is not completely removed and a portion of the copper layer remains, resulting in a circuit short circuit, or a circuit disconnection due to removal of a portion of the copper layer to remain during circuit pattern formation. this is caused

Therefore, according to the present invention, when chemical polishing is performed to reduce the thickness of the first copper layer 130 by 1 to 2 μm, the polished first copper layer 130 has a surface roughness of 0.1 to 0.15 μm ( Rz) and an average size of copper crystal grains in the ND (Normal Direction) direction of 2 μm or less. That is, after the chemical polishing of the first copper layer 130, there are no irregularities on the polished surface. Therefore, when a flexible circuit board is manufactured using the flexible copper clad laminated film 100 of the present invention, defects due to circuit disconnection and/or short circuit can be significantly reduced, and as a result, productivity and reliability of the product can be improved.

The copper etchant used for chemical polishing of the first copper layer 130 is obtained by diluting Poongwon Chemical's MFE-500 (hydrogen peroxide 10% by weight, sulfuric acid 23% by weight, water 67% by weight) stock solution to 20%. The chemical polishing is performed at room temperature.

Hereinafter, a flexible copper clad laminated film 100 according to another embodiment of the present invention will be described with reference to FIG. 2 .

As illustrated in FIG. 2, the flexible copper clad laminated film 100 according to another embodiment of the present invention includes the second tie coat layer 120a on the second surface of the non-conductive polymer substrate 110 and the second tie coat layer 120a. A second copper layer 130a on the tie coat layer 120a is further included.

Like the first tie-coat layer 120, the second tie-coat layer 120a also includes nickel and chromium, but the content of chromium may be 5 to 25% by weight and have a thickness of 150 to 300 Å. can

The second copper layer 130a includes a second copper seed layer 131a on the second tie coat layer 120a and a second copper plating layer 132a on the second copper seed layer 131a. The second copper seed layer 131a may be formed to have a thickness of 500 to 1,500 Å through a sputtering process, and the second copper plating layer 132a may be formed to have a thickness of 1.8 to 2.4 μm through an electroplating process. It can be.

Similar to the first copper layer 130, when chemical polishing is performed to reduce the thickness of the second copper layer 130a by 1 to 2 μm, the polished second copper layer 130a also has a thickness of 0.1 to 0.15 μm. It has a surface roughness (Rz) and an average copper grain size in the ND direction of 2 μm or less.

Hereinafter, with reference to FIGS. 3 to 6, a method for manufacturing the flexible copper clad laminated film 100 according to an embodiment of the present invention will be described in detail.

First, as illustrated in FIG. 3 , a non-conductive polymer substrate 110 is prepared.

The non-conductive polymer substrate 110 may have a thickness of 10 to 40 μm, and may include a thermosetting resin (eg, phenol resin, phenolaldehyde resin, allyl resin, epoxy resin, etc.), polyolefin resin (eg, polyethylene resin, polypropylene resin, etc.), polyester resin (eg, PET, PEN, etc.), or polyimide resin.

Preferably, the non-conductive polymer substrate 110 is formed of polyimide resin. For example, the non-conductive polymer substrate 110 including polyimide may be manufactured by extruding polyamic acid, which is a polyimide precursor, to form a film, and heat-treating the film to imidize the polyamic acid.

The drying step for removing moisture and residual gas from the non-conductive polymer substrate 110 may be performed at 50 to 300 °C using an infrared (IR) heater in a vacuum atmosphere. When the temperature of the infrared (IR) heater is less than 50 ° C, moisture cannot be properly removed, and when the temperature of the infrared (IR) heater exceeds 300 ° C, the non-conductive polymer substrate 110 is damaged, resulting in quality degradation.

After the drying step, in order to remove contaminants that may be present on the surface of the non-conductive polymer substrate 110 and improve adhesion with the tie coat layer 120 to be formed in a subsequent process through surface modification, the vision The conductive polymer substrate 110 may be treated with plasma.

Subsequently, as illustrated in FIG. 4 , a tie coat layer 120 is formed on at least one surface of the non-conductive polymer substrate 110 .

The tie coat layer 120 may be formed to have a thickness of 150 to 300 Å through a sputtering process using a DC sputtering device. When the thickness of the tie coat layer 120 is less than 150 Å, adhesion between the non-conductive polymer substrate 110 and the copper layer 130 to be formed in a subsequent process is insufficient. On the other hand, when the thickness of the tie coat layer 120 exceeds 300 Å, when an etching process for forming a circuit pattern is performed, a part of the tie coat layer 120 to be removed remains, resulting in short circuit of the circuit. The risk of causing this is increased.

As described above, the tie coat layer 120 is for increasing the adhesion between the non-conductive polymer substrate 110 and the copper layer 130 to be formed in a subsequent process, and includes nickel (Ni), chromium (Cr), and molybdenum. (Mo), niobium (Nb), iron (Fe), or a mixture of two or more thereof.

According to one embodiment of the present invention, the tie coat layer 120 is a nickel alloy. For example, the tie coat layer 120 may include nickel and chromium, and the amount of chromium in the tie coat layer 120 may be 5 to 25% by weight.

The density of the tie coat layer 120 may be adjusted by adjusting the power of the sputtering device, and the oxygen content of the tie coat layer 120 may be adjusted by adjusting the degree of vacuum of the chamber.

Subsequently, a copper layer 130 is formed on the tie coat layer 120 . The step of forming the copper layer 130 is the step of forming the copper seed layer 131 on the tie coat layer 120 as illustrated in FIG. 5 and the copper seed layer 131 as illustrated in FIG. 6 . ) and forming a copper plating layer 132 on it.

The copper seed layer 131 may be formed to have a thickness of 500 to 1,500 Å through a sputtering process using a DC sputtering device, and the copper plating layer 132 may be formed to have a thickness of 1.8 to 2.4 μm through an electrolytic plating process. can be formed

Hereinafter, the electrolytic plating process of the present invention for forming the copper plating layer 132 will be described in more detail.

The non-conductive polymer substrate 110 on which the tie coat layer 120 and the copper seed layer 131 are formed contains 30 to 40 g/L of copper, 170 to 180 g/L of sulfuric acid, and 45 to 55 The multistage electrolytic plating of the present invention is performed by sequentially passing through 10 to 20 plating tanks containing an electrolyte solution containing ppm of Cl.

In order to prevent unevenness after chemical polishing of the copper layer 130, the current density applied to each of the plating baths is 0.5 to 3 ASD, and the maximum current density among the current densities applied to the plating baths is 2.8 to 3 ASD. 3 ASD.

According to an embodiment of the present invention, the current density may be increased in each step according to the order in which the step-by-step electroplating is performed.

According to the present invention, in order to prevent unevenness after the chemical polishing of the copper layer 130, the temperature of the electrolyte solution in the plating baths is maintained at 34 to 36 °C.

Through the step-by-step electroplating of the present invention, the copper layer 130 capable of maximally suppressing non-uniformity in etching rate during chemical polishing can be manufactured. In addition, when chemical polishing is performed to reduce the thickness of the copper layer 130 by 1 to 2 μm, the polished copper layer 130 has a surface roughness (Rz) of 0.1 to 0.15 μm and an ND direction of 2 μm or less It has an average copper grain size of That is, after the chemical polishing of the copper layer 130, there are no irregularities on the polished surface. Therefore, when a flexible circuit board is manufactured using the flexible copper clad laminated film 100 of the present invention manufactured as above, defects due to circuit disconnection and/or short circuit can be significantly reduced, and as a result, productivity and reliability of the product are improved. can make it

Hereinafter, a method of manufacturing a flexible printed circuit board according to an embodiment of the present invention will be described in detail with reference to FIGS. 7 to 12 .

First, the flexible copper clad laminated film 100 of the present invention manufactured as described above is prepared.

Subsequently, as illustrated in FIG. 8 , the copper layer 130 (more precisely, the copper plating layer 132) is chemically polished using a copper etchant to reduce the thickness of the copper layer 130 to 1 to 2 decrease by μm.

According to one embodiment of the present invention, the chemical polishing of the copper plating layer 132 is performed by spraying a copper etchant, and may be performed for 25 to 30 seconds at an etching rate of 0.03 to 0.04 μm/sec.

The polished copper layer 130' may have a thickness of 0.5 to 1.5 μm. If the thickness of the polished copper layer 130' is less than 0.5 [mu]m, there is a risk of irregularities being formed on the polished surface due to etching non-uniformity.

Subsequently, as illustrated in FIG. 9 , a photosensitive pattern 10 is formed on the polished copper layer 130 ′. The photosensitive pattern 10 may be formed through a conventional photolithography process. The polished copper layer 130' includes a first portion covered with the photosensitive pattern 10 and a second portion not covered with the photosensitive pattern 10.

Subsequently, a circuit pattern is formed using the photosensitive pattern. Hereinafter, a circuit pattern forming method according to an embodiment of the present invention will be described.

First, as illustrated in FIG. 10, electroplating is performed to have a thickness of 8 to 12 μm on the surface of the second portion of the polished copper layer 130′ not covered with the photosensitive pattern 10. A copper pattern layer 140 is formed.

Subsequently, as illustrated in FIG. 11 , the photosensitive pattern 10 is removed through a general ashing process.

Then, as illustrated in FIG. 12, by selectively removing the first portion of the polished copper layer 130' and the corresponding portion of the tie coat layer 120 that had been covered with the photosensitive pattern 10, the circuit circuit Complete the pattern.

Hereinafter, the present invention will be specifically described through Examples and Comparative Examples. However, the following examples are only for helping understanding of the present invention, and the scope of the present invention is not limited to these examples.

Examples 1 to 6 and Comparative Examples 1 to 12

After drying the polyimide film with an infrared (IR) heater, plasma surface treatment was performed. Subsequently, a NiCr tie coat layer having a thickness of 200 Å was formed through a sputtering process. Subsequently, a copper seed layer having a thickness of 700 Å was formed through a sputtering process. Subsequently, the flexible copper clad laminated films of Examples 1 to 6 and Comparative Examples 1 to 12 were completed by performing electroplating under different conditions in Table 1 below to form a copper plating layer having a thickness of 2 μm.

In Table 1, the maximum current density means the maximum value among current density values applied to each of the plating baths.

plating conditions copper
(g/L) sulfuric acid
(g/L) Cl
(ppm) plating temperature
(℃) max current density
(ASD) Example 1 35 175 50 34 2.8 Example 2 35 175 50 36 2.8 Example 3 35 175 50 34 2.9 Example 4 35 175 50 36 2.9 Example 5 35 175 50 34 3 Example 6 35 175 50 36 3 Comparative Example 1 35 175 50 30 2.4 Comparative Example 2 35 175 50 32 2.6 Comparative Example 3 35 175 50 30 2.8 Comparative Example 4 35 175 50 32 3 Comparative Example 5 35 175 50 30 3.2 Comparative Example 6 35 175 50 32 3.4 Comparative Example 7 35 175 50 38 2.4 Comparative Example 8 35 175 50 40 2.6 Comparative Example 9 35 175 50 38 2.8 Comparative Example 10 35 175 50 40 3 Comparative Example 11 35 175 50 38 3.2 Comparative Example 12 35 175 50 40 3.4

The final thickness of the copper layer (i.e., copper After the thickness of the seed layer + the thickness of the copper plating layer) was set to 0.8 μm, the surface roughness (Rz) of the polished surface of the copper layer, the average size of copper grains in the ND direction, and irregularities were measured or observed, respectively. , and the results are shown in Table 2 below.

* Surface finish (Rz)

Contact evaluation (measurement area: 10 μm × 10 μm) was performed according to the standard JIS B0601: 1994 using an atomic force microscope (AFM).

* Average copper grain size in the ND direction

The average size of copper crystal grains in the ND direction was measured using EBSD (Electron backscatter diffraction) equipment. As software for analysis (calculation), TSL's OIM ^TM was used. 13a and 13b are graphs and photographs showing EBSD measurement results of Example 1 and Comparative Example 1, respectively.

* Whether irregularities occur

The cross-sectional shape obtained by using FIB (Focused Ion Beam) equipment (acceleration voltage: 30 kV, magnification: 2000 times) was observed, and irregularities were considered to have occurred if there were protrusions due to non-uniform retention of Cu particles.

Result after chemical polishing Copper layer thickness after polishing
(μm) surface roughness
(μm) Average copper grain size
(μm) Whether there are bumps or not Example 1 0.8 0.15 1.8 × Example 2 0.8 0.13 1.6 × Example 3 0.8 0.12 1.7 × Example 4 0.8 0.13 1.5 × Example 5 0.8 0.14 1.2 × Example 6 0.8 0.14 1.9 × Comparative Example 1 0.8 0.27 3.2 ○ Comparative Example 2 0.8 0.28 3.4 ○ Comparative Example 3 0.8 0.28 2.6 ○ Comparative Example 4 0.8 0.27 2.4 ○ Comparative Example 5 0.8 0.26 2.3 ○ Comparative Example 6 0.8 0.25 3.3 ○ Comparative Example 7 0.8 0.21 1.8 ○ Comparative Example 8 0.8 0.22 2.8 ○ Comparative Example 9 0.8 0.2 2.3 ○ Comparative Example 10 0.8 0.23 2.4 ○ Comparative Example 11 0.8 0.22 2.7 ○ Comparative Example 12 0.8 0.2 1.9 ○

As can be seen from Table 2, when performing electrolytic plating for forming a copper plating layer, when the maximum current density is out of 2.8 to 3 ASD and the plating temperature (ie, the temperature of the electrolyte solution) is out of 34 to 36 ° C (comparison Examples 1, 2, 5-8, 12), even if the maximum current density is 2.8 to 3 ASD, when the plating temperature (ie, the temperature of the electrolyte solution) is out of 34 to 36 ℃ (Comparative Examples 3, 4, 9 , 10), the surface roughness (Rz) of the copper layer exceeded 0.15 μm. Also, in Comparative Examples 1-6 and 8-11, the average size of the copper crystal grains in the ND direction exceeded 2 μm. As a result, irregularities occurred after chemical polishing in all comparative examples.

100: flexible copper clad laminated film 110: non-conductive polymer substrate
120: tie coat layer 130: copper layer
131: copper seed layer 132: copper plating layer
140: copper pattern layer

Claims (10)

a nonconductive polymer substrate having a first surface and a second surface opposite thereto;
a first tiecoat layer on the first side of the non-conductive polymer substrate; and
Including a first copper layer on the first tie coat layer,
When chemical polishing is performed to reduce the thickness of the first copper layer by 1 to 2 μm, the polished first copper layer has a surface roughness (Rz) of 0.1 to 0.15 μm and a normal direction (ND) direction of 2 μm or less Characterized in that it has an average copper grain size of,
Flexible copper clad laminated film. According to claim 1,
Characterized in that the non-conductive polymer substrate includes polyimide and has a thickness of 10 to 40 μm,
Flexible copper clad laminated film. According to claim 1,
The first tie coat layer includes nickel (Ni), chromium (Cr), molybdenum (Mo), niobium (Nb), iron (Fe) or a mixture of two or more thereof and has a thickness of 150 to 300 Å characterized by,
Flexible copper clad laminated film. According to claim 3,
The first tie coat layer includes nickel and chromium,
Characterized in that the content of the chromium in the first tie coat layer is 5 to 25% by weight,
Flexible copper clad laminated film. According to claim 1,
The first copper layer,
a first copper seed layer on the first tie coat layer; and
A first copper plating layer on the first copper seed layer;
The first copper seed layer has a thickness of 500 to 1,500 Å,
The first copper plating layer has a thickness of 1.8 to 2.4 μm,
Flexible copper clad laminated film. According to claim 1,
a second tie coat layer on the second surface of the non-conductive polymer substrate; and
Further comprising a second copper layer on the second tie coat layer,
When chemical polishing is performed to reduce the thickness of the second copper layer by 1 to 2 μm, the polished second copper layer has a surface roughness (Rz) of 0.1 to 0.15 μm and an average copper grain size in the ND direction of 2 μm or less having size,
Flexible copper clad laminated film. Preparing a non-conductive polymer substrate;
Forming a tie coat layer on at least one surface of the non-conductive polymer substrate;
Forming a copper seed layer on the tie coat layer through a sputtering process; and
Forming a copper plating layer on the copper seed layer,
The copper plating layer is formed through multistage electrolytic plating in which the non-conductive polymer substrate on which the tie coat layer and the copper seed layer are formed is sequentially passed through a plurality of plating tanks,
The current density applied in each of the plating baths is 0.5 to 3 ASD,
Among the current densities applied in the plating baths, the maximum current density is 2.8 to 3 ASD,
Characterized in that the electrolyte temperature in the plating baths is maintained at 34 to 36 ° C.
Manufacturing method of flexible copper clad laminated film. According to claim 7,
In the manufacturing method, before forming the tie coat layer,
removing moisture and residual gas from the non-conductive polymer substrate; and
Then, further comprising the step of treating at least one surface of the non-conductive polymer substrate with plasma,
The tie coat layer is formed through a sputtering process, includes nickel (Ni), chromium (Cr), molybdenum (Mo), niobium (Nb), iron (Fe) or a mixture of two or more of them, and has a 150 to 300 Characterized in that it has a thickness of Å,
Manufacturing method of flexible copper clad laminated film. According to claim 8,
The tie coat layer contains nickel and chromium,
Characterized in that the content of the chromium in the tie coat layer is 5 to 25% by weight,
Manufacturing method of flexible copper clad laminated film. According to claim 7,
The current density increases in each step according to the order in which the stepwise electroplating is performed,
Characterized in that each of the electrolytes in the plating baths contains 30 to 40 g / L of copper, 170 to 180 g / L of sulfuric acid, and 45 to 55 ppm of Cl.
Manufacturing method of flexible copper clad laminated film.

Images