TW202248462A - Roughened copper foil, copper-clad laminated board, and printed wiring board - Google Patents
Roughened copper foil, copper-clad laminated board, and printed wiring board Download PDFInfo
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- TW202248462A TW202248462A TW111120636A TW111120636A TW202248462A TW 202248462 A TW202248462 A TW 202248462A TW 111120636 A TW111120636 A TW 111120636A TW 111120636 A TW111120636 A TW 111120636A TW 202248462 A TW202248462 A TW 202248462A
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- copper foil
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 197
- 239000011889 copper foil Substances 0.000 title claims abstract description 177
- 239000002245 particle Substances 0.000 claims abstract description 45
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 24
- 239000007787 solid Substances 0.000 claims description 11
- 238000005520 cutting process Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 6
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 abstract description 42
- 239000000463 material Substances 0.000 abstract description 13
- 239000011859 microparticle Substances 0.000 abstract 1
- 238000007788 roughening Methods 0.000 description 43
- 239000010410 layer Substances 0.000 description 38
- 229920005989 resin Polymers 0.000 description 35
- 239000011347 resin Substances 0.000 description 35
- 239000000243 solution Substances 0.000 description 28
- 239000010949 copper Substances 0.000 description 24
- 238000000034 method Methods 0.000 description 24
- 229910052802 copper Inorganic materials 0.000 description 22
- 238000005259 measurement Methods 0.000 description 15
- 238000007747 plating Methods 0.000 description 13
- 238000001556 precipitation Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 12
- 238000009826 distribution Methods 0.000 description 12
- 239000011701 zinc Substances 0.000 description 10
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 229910052725 zinc Inorganic materials 0.000 description 9
- 239000004593 Epoxy Substances 0.000 description 8
- 229910007567 Zn-Ni Inorganic materials 0.000 description 8
- 229910007614 Zn—Ni Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910003296 Ni-Mo Inorganic materials 0.000 description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 7
- 238000005868 electrolysis reaction Methods 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 5
- 239000008151 electrolyte solution Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910000990 Ni alloy Inorganic materials 0.000 description 4
- 238000004873 anchoring Methods 0.000 description 4
- BQJTUDIVKSVBDU-UHFFFAOYSA-L copper;sulfuric acid;sulfate Chemical compound [Cu+2].OS(O)(=O)=O.[O-]S([O-])(=O)=O BQJTUDIVKSVBDU-UHFFFAOYSA-L 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005755 formation reaction Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 101100533725 Mus musculus Smr3a gene Proteins 0.000 description 3
- 101100149716 Rattus norvegicus Vcsa1 gene Proteins 0.000 description 3
- 101150096622 Smr2 gene Proteins 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910000365 copper sulfate Inorganic materials 0.000 description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000010998 test method Methods 0.000 description 3
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910001297 Zn alloy Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229920003192 poly(bis maleimide) Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001955 polyphenylene ether Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229940005657 pyrophosphoric acid Drugs 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 2
- KOMNUTZXSVSERR-UHFFFAOYSA-N 1,3,5-tris(prop-2-enyl)-1,3,5-triazinane-2,4,6-trione Chemical compound C=CCN1C(=O)N(CC=C)C(=O)N(CC=C)C1=O KOMNUTZXSVSERR-UHFFFAOYSA-N 0.000 description 1
- ZDDUSDYMEXVQNJ-UHFFFAOYSA-N 1H-imidazole silane Chemical compound [SiH4].N1C=NC=C1 ZDDUSDYMEXVQNJ-UHFFFAOYSA-N 0.000 description 1
- LMPMFQXUJXPWSL-UHFFFAOYSA-N 3-(3-sulfopropyldisulfanyl)propane-1-sulfonic acid Chemical compound OS(=O)(=O)CCCSSCCCS(O)(=O)=O LMPMFQXUJXPWSL-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 101001134276 Homo sapiens S-methyl-5'-thioadenosine phosphorylase Proteins 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 102100022050 Protein canopy homolog 2 Human genes 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- -1 Vmp+Vmc Chemical compound 0.000 description 1
- OMTKQJNJACHQNY-UHFFFAOYSA-N [Ni].[Zn].[Mo] Chemical compound [Ni].[Zn].[Mo] OMTKQJNJACHQNY-UHFFFAOYSA-N 0.000 description 1
- BFXRJTDKPLPXSK-UHFFFAOYSA-N [SiH4].CO[Si](CCCS)(OC)OC Chemical compound [SiH4].CO[Si](CCCS)(OC)OC BFXRJTDKPLPXSK-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- PPTYNCJKYCGKEA-UHFFFAOYSA-N dimethoxy-phenyl-prop-2-enoxysilane Chemical compound C=CCO[Si](OC)(OC)C1=CC=CC=C1 PPTYNCJKYCGKEA-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004441 surface measurement Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- VMYXFDVIMUEKNP-UHFFFAOYSA-N trimethoxy-[5-(oxiran-2-yl)pentyl]silane Chemical compound CO[Si](OC)(OC)CCCCCC1CO1 VMYXFDVIMUEKNP-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
- C25D7/0614—Strips or foils
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/04—Wires; Strips; Foils
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/16—Electroplating with layers of varying thickness
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Laminated Bodies (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
Description
本發明係關於一種粗化處理銅箔、銅箔積層板及印刷佈線板。The invention relates to a roughened copper foil, a copper foil laminate and a printed wiring board.
於印刷佈線板之製造步驟中,銅箔以與絕緣樹脂基材貼合而成之銅箔積層板之形態被廣泛使用。關於該方面,為了防止於製造印刷佈線板時產生佈線之剝離,理想的是使銅箔與絕緣樹脂基材具有較高之密接力。因此,於通常之印刷佈線板製造用銅箔中,藉由對銅箔之貼合面實施粗化處理而形成包含微細之銅粒子之凹凸,利用衝壓加工使該凹凸沒入絕緣樹脂基材之內部從而發揮投錨效應,藉此提高密接性。In the manufacturing process of printed wiring boards, copper foil is widely used in the form of copper foil laminates bonded to insulating resin substrates. In this respect, in order to prevent the peeling of wiring from occurring at the time of manufacturing a printed wiring board, it is desirable that copper foil and an insulating resin base material have high adhesive force. Therefore, in the usual copper foil for printed wiring board manufacture, roughening treatment is performed on the bonded surface of the copper foil to form irregularities including fine copper particles, and the irregularities are immersed in the insulating resin base material by pressing. The interior thus exerts an anchoring effect, thereby improving adhesion.
作為進行此種粗化處理之銅箔,例如於專利文獻1(日本專利特開2018-172785號公報)中揭示有一種表面處理銅箔,該表面處理銅箔具有銅箔、及銅箔之至少一表面上之粗化處理層,粗化處理層側表面之算術平均粗糙度Ra為0.08 μm以上0.20 μm以下,粗化處理層側表面之TD(寬度方向)之光澤度為70%以下。根據此種表面處理銅箔,設置於銅箔表面之粗化粒子之脫落得到良好地抑制,且與絕緣基板貼合時之皺褶及條紋之產生得到良好地抑制。As a copper foil subjected to such a roughening treatment, for example, a surface-treated copper foil is disclosed in Patent Document 1 (Japanese Patent Laid-Open No. 2018-172785). The surface-treated copper foil has a copper foil and at least For the roughened layer on one surface, the arithmetic average roughness Ra of the roughened layer side surface is 0.08 μm to 0.20 μm, and the TD (width direction) glossiness of the roughened layer side surface is 70% or lower. According to such a surface-treated copper foil, the falling off of the roughening particles provided on the surface of the copper foil is suppressed favorably, and the occurrence of wrinkles and streaks during lamination to an insulating substrate is favorably suppressed.
然,伴隨近年來攜帶用電子機器等之高功能化,為了進行大容量資料之高速處理,不論是數位信號還是類比信號,均推行高頻化,從而要求適於高頻用途之印刷佈線板。對於此種高頻用印刷佈線板,為了能傳輸高頻信號而不使其劣化,期望降低傳輸損耗。印刷佈線板係具備加工成佈線圖案之銅箔及絕緣基材者,但作為傳輸損耗中之主要損耗,可例舉銅箔所引起之導體損耗、及絕緣基材所引起之介電損失。However, in recent years, with the high-functioning of portable electronic devices, in order to perform high-speed processing of large-capacity data, both digital and analog signals are increasing in frequency, and printed wiring boards suitable for high-frequency applications are required. In such a high-frequency printed wiring board, it is desired to reduce transmission loss in order to transmit high-frequency signals without degrading them. A printed wiring board is provided with copper foil processed into a wiring pattern and an insulating base material, but as the main loss in the transmission loss, the conductor loss caused by the copper foil and the dielectric loss caused by the insulating base material can be exemplified.
關於該方面,提出了一種降低了傳輸損耗之粗化處理銅箔。例如,於專利文獻2(日本專利特開2015-148011號公報)中揭示了如下等記載:以提供信號之傳輸損耗較小之表面處理銅箔及使用其之積層板等為目的,藉由表面處理而將銅箔表面之基於JIS B0601-2001之偏斜度Rsk控制在-0.35以上0.53以下之特定範圍。 [先前技術文獻] [專利文獻] In this regard, a roughened copper foil with reduced transmission loss has been proposed. For example, in Patent Document 2 (Japanese Patent Application Laid-Open No. 2015-148011), it is disclosed that for the purpose of providing a surface-treated copper foil with a small signal transmission loss and a laminate using the same, Treatment to control the skewness Rsk of the copper foil surface based on JIS B0601-2001 within a specific range of -0.35 to 0.53. [Prior Art Literature] [Patent Document]
[專利文獻1]日本專利特開2018-172785號公報 [專利文獻2]日本專利特開2015-148011號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2018-172785 [Patent Document 2] Japanese Patent Laid-Open No. 2015-148011
如上所述,近年來,要求提高印刷佈線板之傳輸特性(高頻特性)。為了應對此種要求,嘗試了對銅箔之與絕緣樹脂基材之接合面施加更微細之粗化處理。即,為了減少成為使傳輸損耗增大之要因之銅箔表面之凹凸,可考慮對起伏較小之銅箔表面(例如雙面平滑箔之表面或電解銅箔之電極面)進行微細粗化處理。然而,於使用此種粗化處理銅箔進行銅箔積層板之加工或印刷佈線板之製造之情形時,一般來說會產生銅箔-基材間之剝離強度較低,密接可靠性較差之問題。As described above, in recent years, it is required to improve the transmission characteristics (high frequency characteristics) of printed wiring boards. In order to cope with such a request, it has been attempted to apply finer roughening treatment to the joint surface of the copper foil and the insulating resin base material. That is, in order to reduce the unevenness of the copper foil surface which is the cause of increased transmission loss, it is conceivable to perform micro-roughening treatment on the copper foil surface with small fluctuations (such as the surface of double-sided smooth foil or the electrode surface of electrolytic copper foil) . However, when such roughened copper foil is used for the processing of copper foil laminates or the manufacture of printed wiring boards, generally speaking, the peel strength between the copper foil and the base material is low, and the adhesion reliability is poor. question.
本發明人等此番獲得了如下見解:藉由在粗化處理銅箔之表面,將基於突出峰部實體體積Vmp、核心部實體體積Vmc及峰頂點密度Spd所算出之微小前端粒子體積、以及切斷程度(level)差Rdc控制在特定之範圍內,能令使用其所製造之銅箔積層板或印刷佈線板兼具優異之傳輸特性與較高之剝離強度。The inventors of the present invention obtained the following insights: by roughening the surface of the copper foil, the small front particle volume calculated based on the protruding peak volume Vmp, the core volume Vmc, and the peak apex density Spd, and The cutting level (level) difference Rdc is controlled within a specific range, which can make the copper foil laminated board or printed wiring board manufactured by using it have both excellent transmission characteristics and high peel strength.
因此,本發明之目的在於提供一種於用於銅箔積層板或印刷佈線板之情形時,能兼具優異之傳輸特性與較高之剝離強度之粗化處理銅箔。Therefore, an object of the present invention is to provide a roughened copper foil having both excellent transmission characteristics and high peel strength when used in a copper foil laminate or a printed wiring board.
根據本發明,提供以下態樣。
[態樣1]
一種粗化處理銅箔,其係於至少一側具有粗化處理面者,且
關於上述粗化處理面,基於每單位面積之突出峰部實體體積Vmp(μm
3/μm
2)、每單位面積之核心部實體體積Vmc(μm
3/μm
2)、及每單位面積之峰頂點密度Spd(個/μm
2),利用(Vmp+Vmc)/Spd之式所算出的微小前端粒子體積為1.300 μm
3/個以下,且切斷程度差Rdc為0.95 μm以上,
上述Vmp、Vmc及Spd係依據ISO25178,於倍率200倍、S-濾波器(S-filter,低通濾波器)之截止波長為0.3 μm且L-濾波器(L-filter,高通濾波器)之截止波長為5 μm之條件下所測得之值,
上述Rdc係於依據JIS B0601-2013,在倍率20倍、不進行截止值λs之截止且截止值λc之截止波長為320 μm之條件下所測得之粗糙度曲線中,作為負載長度率(Rmr1)20%及負載長度率(Rmr2)80%之高度方向之切斷程度c之差(c(Rmr1)-c(Rmr2))所獲得之值。
[態樣2]
如態樣1所記載之粗化處理銅箔,其中上述粗化處理面之上述切斷程度差Rdc為1.10 μm以上20.00 μm以下。
[態樣3]
如態樣1或2所記載之粗化處理銅箔,其中上述粗化處理面之每單位面積之上述核心部實體體積Vmc為0.360 μm
3/μm
2以下。
[態樣4]
如態樣1至3中任一項所記載之粗化處理銅箔,其中上述粗化處理面之上述突出峰部實體體積Vmp與上述核心部實體體積Vmc之和即Vmp+Vmc為0.380 μm
3/μm
2以下。
[態樣5]
如態樣1至4中任一項所記載之粗化處理銅箔,其中上述粗化處理面之界面展開面積比Sdr為70%以下,上述Sdr係依據ISO25178,於倍率200倍、S-濾波器之截止波長為0.3 μm且L-濾波器之截止波長為5 μm之條件下所測得之值。
[態樣6]
如態樣1至5中任一項所記載之粗化處理銅箔,其中上述粗化處理面之核心部程度差Sk為1.50 μm以上,上述Sk係依據ISO25178,於倍率20倍、不進行S-濾波器之截止且L-濾波器之截止波長為320 μm之條件下所測得之值。
[態樣7]
如態樣1至6中任一項所記載之粗化處理銅箔,其中上述粗化處理面之極點高度Sxp為1.10 μm以上,上述Sxp係依據ISO25178,於倍率20倍、不進行S-濾波器之截止且L-濾波器之截止波長為320 μm之條件下所測得之值。
[態樣8]
如態樣1至7中任一項所記載之粗化處理銅箔,其中上述粗化處理面之每單位面積之上述峰頂點密度Spd為0.12個/μm
2以上0.46個/μm
2以下。
[態樣9]
如態樣1至8中任一項所記載之粗化處理銅箔,其中於上述粗化處理面上進而具備防銹處理層及/或矽烷偶合劑處理層。
[態樣10]
如態樣1至9中任一項所記載之粗化處理銅箔,其中上述粗化處理銅箔為電解銅箔,上述粗化處理面存在於電解銅箔之析出面側。
[態樣11]
一種銅箔積層板,其具備如態樣1至10中任一項所記載之粗化處理銅箔。
[態樣12]
一種印刷佈線板,其具備如態樣1至10中任一項所記載之粗化處理銅箔。
According to the present invention, the following aspects are provided. [Aspect 1] A roughened copper foil having a roughened surface on at least one side, and with respect to the above-mentioned roughened surface, based on the volume Vmp of the protruding peak portion per unit area (μm 3 /μm 2 ), the solid volume of the core part per unit area Vmc (μm 3 /μm 2 ), and the peak apex density Spd per unit area (pieces/μm 2 ), the volume of tiny front-end particles calculated by the formula (Vmp+Vmc)/Spd 1.300 μm 3 / piece or less, and the cut-off degree difference Rdc is 0.95 μm or more. The above-mentioned Vmp, Vmc and Spd are based on ISO25178, at a magnification of 200 times, and the cut-off of the S-filter (S-filter, low-pass filter) The value measured under the condition that the wavelength is 0.3 μm and the cut-off wavelength of the L-filter (L-filter, high-pass filter) is 5 μm. In the roughness curve measured under the condition that the cut-off value of λs and the cut-off wavelength of cut-off value λc are 320 μm, it is the tangent in the height direction of the load length ratio (Rmr1) of 20% and the load length ratio (Rmr2) of 80% The value obtained from the difference of the degree of c (c(Rmr1)-c(Rmr2)). [Aspect 2] The roughened copper foil according to
定義用以特定本發明之用語或參數之定義如下所述。 Definitions Definitions of terms or parameters used to specify the present invention are as follows.
本說明書中之所謂「粗糙度曲線之負載曲線」,如圖1所示,係指依據JIS B0601-2013所決定之,將以切斷程度c切斷粗糙度曲線時所顯示出之實體部之比率表示為c之函數所得之曲線。即,粗糙度曲線之負載曲線亦可謂表示負載長度率Rmr(c)成為0%至100%之高度之曲線。所謂負載長度率Rmr(c),如圖2所示,係指依據JIS B0601-2013所決定之,表示切斷程度c處之粗糙度曲線要素之負載長度相對於評價長度之比率的參數。The so-called "load curve of the roughness curve" in this manual refers to the size of the solid part shown when the roughness curve is cut at the cutting degree c, as determined in accordance with JIS B0601-2013, as shown in Figure 1. The ratio is expressed as a function of c resulting from the curve. That is, the load curve of the roughness curve can also be called a curve showing the height at which the load length ratio Rmr(c) becomes 0% to 100%. The load length ratio Rmr(c), as shown in Fig. 2, is a parameter that indicates the ratio of the load length to the evaluation length of the roughness curve element at the degree of cutting c determined in accordance with JIS B0601-2013.
本說明書中之所謂「切斷程度差Rdc」或「Rdc」,如圖3所示,係指依據JIS B0601-2013所測得之,表示粗糙度曲線之負載曲線中2個負載長度率Rmr1及Rmr2(其中,Rmr1<Rmr2)之高度方向之切斷程度c之差(c(Rmr1)-c(Rmr2))的參數。本說明書中,將Rmr1指定為20%且將Rmr2指定為80%來計算Rdc。The so-called "cutting degree difference Rdc" or "Rdc" in this specification, as shown in Figure 3, refers to the two load length ratios Rmr1 and The parameter of the difference (c(Rmr1)-c(Rmr2)) of the cut-off degree c in the height direction of Rmr2 (wherein, Rmr1<Rmr2). In this specification, Rdc is calculated by designating Rmr1 as 20% and Rmr2 as 80%.
本說明書中之所謂「面之負載曲線」係指依據ISO25178所決定之表示負載面積率成為0%至100%之高度之曲線。所謂負載面積率,如圖4所示,係指表示某一高度c以上之區域之面積的參數。高度c之負載面積率相當於圖4中之Smr(c)。如圖5所示,自負載面積率為0%起,沿著負載曲線取負載面積率之差成為40%之點,畫出負載曲線之割線,使該負載曲線之割線自負載面積率0%起開始移動,將割線之傾斜最為平緩之位置稱為面之負載曲線之中央部分。相對於該中央部分,縱軸方向之偏差平方和變為最小之直線稱為等效直線。包含於等效直線之負載面積率0%至100%之高度之範圍內之部分稱為核心部。較核心部高之部分稱為突出峰部,較核心部低之部分稱為突出谷部。The so-called "surface load curve" in this specification refers to a curve indicating the height of the load area ratio from 0% to 100% determined based on ISO25178. The so-called load area ratio, as shown in Fig. 4, refers to a parameter indicating the area of a region above a certain height c. The load area ratio of height c corresponds to Smr(c) in Fig. 4 . As shown in Figure 5, starting from the load area ratio of 0%, take the point along the load curve where the difference of the load area ratio becomes 40%, and draw the secant line of the load curve so that the secant line of the load curve starts from the load area ratio of 0% Starting to move from the beginning, the position where the slope of the secant is the most gentle is called the central part of the load curve of the surface. With respect to the central portion, the straight line whose sum of squares of the deviation in the direction of the vertical axis becomes the smallest is called an equivalent straight line. The part included in the height range of 0% to 100% of the load area ratio of the equivalent straight line is called the core part. The part higher than the core is called the protruding peak, and the part lower than the core is called the protruding valley.
本說明書中之所謂「分離突出峰部與核心部之負載面積率Smr1」,如圖5所示,係指依據ISO25178所決定之表示核心部之上部之高度與面之負載曲線的交點處之負載面積率(即區分核心部與突出峰部之負載面積率)之參數。本說明書中之所謂「分離突出谷部與核心部之負載面積率Smr2」,如圖5所示,係指依據ISO25178所決定之表示核心部之下部之高度與負載曲線之交點處之負載面積率(即區分核心部與突出谷部之負載面積率)的參數。The so-called "load area ratio Smr1 separating the protruding peak part and the core part" in this manual refers to the load at the intersection point of the load curve indicating the height and surface of the upper part of the core part determined in accordance with ISO25178, as shown in Figure 5 Area ratio (i.e. the load area ratio to distinguish the core part from the protruding peak part) is a parameter. The so-called "load area ratio Smr2 separating the protruding valley part and the core part" in this manual refers to the load area ratio at the intersection point of the height of the lower part of the core part and the load curve determined according to ISO25178, as shown in Figure 5 (That is, the parameter that distinguishes the load area ratio of the core part and the protruding valley part).
本說明書中之所謂「核心部程度差Sk」或「Sk」係指依據ISO25178所測得之核心部之最大高度減最小高度所得之值,如圖5所示,係指根據等效直線之負載面積率0%與100%之高度差而算出之參數。The so-called "core difference Sk" or "Sk" in this manual refers to the value obtained by subtracting the minimum height from the maximum height of the core measured according to ISO25178, as shown in Figure 5, which refers to the load based on the equivalent straight line Parameters calculated from the height difference between 0% and 100% of the area ratio.
本說明書中之所謂「突出峰部實體體積Vmp」或「Vmp」,如圖6所示,係指依據ISO25178所測得之表示突出峰部之體積之參數。又,本說明書中之所謂「核心部實體體積Vmc」或「Vmc」,如圖6所示,係指依據ISO25178所測得之表示核心部之體積之參數。本說明書中,將分離核心部與突出峰部之負載面積率Smr1指定為10%,且將分離核心部與突出谷部之負載面積率Smr2指定為80%來計算Vmp及Vmc。The so-called "protruding peak volume Vmp" or "Vmp" in this specification, as shown in FIG. 6, refers to a parameter indicating the volume of the protruding peak measured in accordance with ISO25178. In addition, the so-called "core solid volume Vmc" or "Vmc" in this specification refers to a parameter indicating the volume of the core measured in accordance with ISO25178, as shown in FIG. 6 . In this specification, Vmp and Vmc are calculated by designating the load area ratio Smr1 of the separated core portion and the protruding peak portion as 10%, and specifying the load area ratio Smr2 of the separated core portion and the protruding valley portion as 80%.
本說明書中之所謂「峰頂點密度Spd」或「Spd」,係指依據ISO25178所測得之表示每單位面積之峰頂之數量的參數。Spd可藉由使輪廓曲面所包含之峰頂之數量除以輪廓曲面之投影面積而算出。本說明書中,僅對輪廓曲面中之大於最大振幅之5%之峰頂進行計數而算出Spd。"Peak top density Spd" or "Spd" in this specification refers to a parameter indicating the number of peak tops per unit area measured in accordance with ISO25178. Spd can be calculated by dividing the number of peaks included in the contour surface by the projected area of the contour surface. In this specification, Spd is calculated by counting only peak tops larger than 5% of the maximum amplitude in the contour surface.
本說明書中之所謂「微小前端粒子體積」,係指基於每單位面積之突出峰部實體體積Vmp(μm 3/μm 2)、每單位面積之核心部實體體積Vmc(μm 3/μm 2)、及每單位面積之峰頂點密度Spd(個/μm 2),利用(Vmp+Vmc)/Spd之式所算出之參數。又,本說明書中之所謂「Vmp+Vmc」係指藉由每單位面積之突出峰部實體體積Vmp(μm 3/μm 2)及每單位面積之核心部實體體積Vmc(μm 3/μm 2)之和所算出之參數。 The so-called "micro front particle volume" in this specification refers to the solid volume of the protruding peak part per unit area Vmp (μm 3 /μm 2 ), the solid volume of the core part per unit area Vmc (μm 3 /μm 2 ), And the peak apex density Spd per unit area (number/μm 2 ), a parameter calculated by the formula of (Vmp+Vmc)/Spd. Also, the so-called "Vmp+Vmc" in this specification refers to the sum of the protruding peak volume per unit area Vmp (μm 3 /μm 2 ) and the core volume per unit area Vmc (μm 3 /μm 2 ) The calculated parameters.
本說明書中之所謂「極點高度Sxp」或「Sxp」,如圖7所示,係指依據ISO25178所測得之表示負載面積率p%與負載面積率q%之高度之差量的參數。Sxp表示去除表面中特別高之峰後之表面之平均面與表面之高度之差量。本說明書中,將負載面積率p指定為2.5%,將負載面積率q指定為50%而算出Sxp。The so-called "pole height Sxp" or "Sxp" in this specification, as shown in Figure 7, refers to the parameter that represents the difference in height between the load area ratio p% and the load area ratio q% measured according to ISO25178. Sxp represents the difference between the average surface of the surface and the height of the surface after removal of particularly high peaks on the surface. In this specification, Sxp is calculated by designating the loaded area ratio p as 2.5%, and designating the loaded area ratio q as 50%.
本說明書中之所謂「界面展開面積比Sdr」或「Sdr」,係指依據ISO25178所測得之以百分率表示定義區域之展開面積(表面積)較定義區域之面積增大了何種程度的參數。該值越小,則表示表面形狀越接近平坦,完全平坦之表面之Sdr成為0%。另一方面,該值越大,則表示表面形狀之凹凸越多。The so-called "interface expansion area ratio Sdr" or "Sdr" in this specification refers to a parameter that indicates the extent to which the expansion area (surface area) of the defined area is larger than the area of the defined area measured in accordance with ISO25178. The smaller the value, the closer the surface shape is to flat, and the Sdr of a completely flat surface becomes 0%. On the other hand, the larger the value, the more unevenness of the surface shape.
Rdc可藉由利用市售之雷射顯微鏡測定粗化處理面中之特定之測定長度之表面分佈來計算。又,Vmp、Vmc、Spd、Sdr、Sk及Sxp可分別藉由利用市售之雷射顯微鏡測定粗化處理面中之特定之測定面積之表面分佈來計算。本說明書中,Vmp、Vmc、Spd及Sdr設為於倍率200倍、S-濾波器之截止波長為0.3 μm且L-濾波器之截止波長為5 μm之條件下所測得者。另一方面,Rdc設為於倍率20倍、不進行截止值λs之截止且截止值λc之截止波長為320 μm之條件下所測得者,Sk及Sxp設為於倍率20倍、不進行S-濾波器之截止且L-濾波器之截止波長為320 μm之條件下所測得者。再者,於在利用雷射顯微鏡進行之測定中,使用物鏡及光學變焦兩者之情形時,上述倍率相當於使物鏡之倍率乘以光學變焦之倍率所得之值。例如,於物鏡倍率為100倍,光學變焦倍率為2倍之情形時,倍率成為200倍(=100×2)。此外,關於雷射顯微鏡之對表面分佈之較佳之測定條件及解析條件,示於下述實施例中。Rdc can be calculated by measuring the surface distribution of a specific measurement length on the roughened surface using a commercially available laser microscope. Moreover, Vmp, Vmc, Spd, Sdr, Sk, and Sxp can be calculated by measuring the surface distribution of the specific measurement area in the roughening process surface, respectively, using a commercially available laser microscope. In this specification, Vmp, Vmc, Spd, and Sdr are measured under the conditions of a magnification of 200 times, an S-filter cutoff wavelength of 0.3 μm, and an L-filter cutoff wavelength of 5 μm. On the other hand, Rdc is set to be measured at a magnification of 20 times, the cutoff value λs is not cut off, and the cutoff wavelength of the cutoff value λc is 320 μm, and Sk and Sxp are set at a magnification of 20 times without S - The cutoff of the filter and the cutoff wavelength of the L-filter are measured under the condition of 320 μm. In addition, when both the objective lens and optical zoom are used in the measurement by a laser microscope, the said magnification corresponds to the value obtained by multiplying the magnification of an objective lens by the magnification of an optical zoom. For example, when the objective lens magnification is 100 times and the optical zoom magnification is 2 times, the magnification becomes 200 times (=100×2). In addition, preferable measurement conditions and analysis conditions for the surface distribution of the laser microscope are shown in the following examples.
本說明書中,電解銅箔之「電極面」係指製造電解銅箔時與陰極相接之側之面。In this specification, the "electrode surface" of the electrodeposited copper foil refers to the surface on the side that is in contact with the cathode when the electrodeposited copper foil is produced.
本說明書中,電解銅箔之「析出面」係指製造電解銅箔時電解銅析出之側之面,即不與陰極相接之側之面。In this specification, the "precipitation surface" of the electrolytic copper foil refers to the surface on which the electrolytic copper is deposited when the electrolytic copper foil is produced, that is, the surface on the side not in contact with the cathode.
粗化處理銅箔本發明之銅箔係粗化處理銅箔。該粗化處理銅箔於至少一側具有粗化處理面。該粗化處理面之基於每單位面積之突出峰部實體體積Vmp(μm 3/μm 2)、每單位面積之核心部實體體積Vmc(μm 3/μm 2)、及每單位面積之峰頂點密度Spd(個/μm 2),利用(Vmp+Vmc)/Spd之式所算出之微小前端粒子體積為1.300 μm 3/個以下。又,粗化處理面之切斷程度差Rdc為0.95 μm以上。藉由以此方式於粗化處理銅箔之表面,將微小前端粒子體積及切斷程度差Rdc控制在特定之範圍內,而能令使用其製造之銅箔積層板或印刷佈線板兼具優異之傳輸特性(高頻特性)與較高之剝離強度(例如常態剝離強度及耐濕剝離強度)。 Roughening treatment copper foil The copper foil of this invention is a roughening treatment copper foil. The roughened copper foil has a roughened surface on at least one side. The roughened surface is based on the protruding peak volume per unit area Vmp (μm 3 /μm 2 ), the core volume per unit area Vmc (μm 3 /μm 2 ), and the peak apex density per unit area Spd (piece/μm 2 ), the volume of tiny front-end particles calculated by the formula (Vmp+Vmc)/Spd is 1.300 μm 3 /piece or less. In addition, the degree of fracture Rdc of the roughened surface is 0.95 μm or more. By roughening the surface of the copper foil in this way, the volume of the small front particles and the degree of cutting Rdc are controlled within a specific range, and the copper foil laminate or printed wiring board manufactured using it can be excellent. Excellent transmission characteristics (high frequency characteristics) and high peel strength (such as normal peel strength and moisture resistance peel strength).
優異之傳輸特性與較高之剝離強度原本難以兼顧。其原因在於,為了獲得優異之傳輸特性,要求減小銅箔表面之凹凸,另一方面,為了獲得較高之剝離強度,要求增大銅箔表面之凹凸,兩者處於取捨關係。此處,如圖8所示,粗化處理銅箔表面之凹凸包含「粗化粒子分量」與週期較粗化粒子分量長之「起伏分量」。一般而言,為了獲得優異之傳輸特性,可考慮對起伏較小之銅箔表面(例如雙面平滑箔之表面或電解銅箔之電極面)進行微細粗化處理而形成較小之粗化粒子,但於使用此種粗化處理銅箔製造銅箔積層板或印刷佈線板之情形時,總體而言銅箔-基材間之剝離強度變低。It is difficult to balance the excellent transmission characteristics and high peel strength. The reason is that in order to obtain excellent transmission characteristics, it is required to reduce the unevenness of the copper foil surface, and on the other hand, in order to obtain high peel strength, it is required to increase the unevenness of the copper foil surface, and the two are in a trade-off relationship. Here, as shown in FIG. 8 , the unevenness on the surface of the roughened copper foil includes a "roughened particle component" and a "fluctuation component" whose period is longer than that of the roughened particle component. Generally speaking, in order to obtain excellent transmission characteristics, it can be considered to perform micro-roughening treatment on the surface of copper foil with less fluctuation (such as the surface of double-sided smooth foil or the electrode surface of electrolytic copper foil) to form smaller roughened particles , but when such a roughened copper foil is used to manufacture a copper foil laminate or a printed wiring board, the peel strength between the copper foil and the base material generally becomes low.
針對該問題,本發明人等研究了銅箔表面之凹凸之粗化粒子及起伏對傳輸特性及剝離強度產生之影響。結果判明了,銅箔之起伏分量與預想相反,不易對傳輸特性產生影響,主要是粗化粒子之大小會對傳輸特性產生影響。而且,本發明人等查明藉由為了使傳輸特性良好而將凸起(粗化粒子)微細化,並且對於因此而不足之密接性利用對傳輸特性影響較小之銅箔之起伏來彌補,能兼具優異之傳輸特性與較高之剝離強度所帶來之密接可靠性。具體而言,發現了藉由將會對傳輸特性產生影響之微小凸起(粗化粒子)之體積相關的微小前端粒子體積設為1.300 μm 3/個以下,能實現優異之傳輸特性。進而,還發現了藉由將反映出較廣範圍之粗化處理面之高度的測定條件下之切斷程度差Rdc設為0.95 μm以上,而即便為原本難以確保剝離強度之較小之粗化粒子,亦可利用銅箔之起伏實現銅箔-基板間之較高之剝離強度。 In response to this problem, the inventors of the present invention have studied the influence of roughened particles and undulations on the surface of copper foil on transmission characteristics and peel strength. As a result, it was found that the fluctuation component of the copper foil is contrary to the expectation, and it is not easy to affect the transmission characteristics. The main reason is that the size of the coarsening particles will affect the transmission characteristics. Furthermore, the inventors of the present invention have found that by making the bumps (roughened particles) finer in order to improve the transmission characteristics, and making up for the lack of adhesion by using the undulations of the copper foil that have little influence on the transmission characteristics, It can have both excellent transmission characteristics and high adhesion reliability brought by high peel strength. Specifically, it has been found that excellent transport properties can be achieved by setting the volume of micro front particles relative to the volume of micro protrusions (roughened particles) that will affect transport properties to 1.300 μm 3 /piece or less. Furthermore, it has also been found that by setting the degree of cut Rdc under measurement conditions reflecting a wide range of heights of the roughened surface to be 0.95 μm or more, even small roughened surfaces where it is difficult to secure peel strength Particles can also use the undulations of the copper foil to achieve a higher peel strength between the copper foil and the substrate.
藉由控制微小前端粒子體積而能提高傳輸特性之機制雖然未必明確,但可認為如下所述。此處,將已區分出核心部與突出谷部之交界之凸起(粗化粒子)之模式剖視圖示於圖9中。如圖9所示,使每單位面積之凸起之核心部與突出峰部一致之部分(自凸起整體去除相當於突出谷部之凸起下部後之部分)之體積相當於Vmp+Vmc。而且,峰頂點密度Spd表示每單位面積之凸起之個數,因此如圖9所示,Vmp+Vmc除以Spd所得者(=(Vmp+Vmc)/Spd),相當於每1個凸起之微小前端粒子體積。關於該方面,於假定Spd相同(即每單位面積之凸起之數量相同)且Vmp+Vmc不同之2種粗化處理面之情形時,Vmp+Vmc較小之粗化處理面之凸起之尺寸變小,因此成為傳輸特性優異者。另一方面,於假定Vmp+Vmc相同(即每單位面積之凸起之體積相同)且Spd不同之2種粗化處理面之情形時,Spd較大之粗化處理面將相同之體積分散給多個凸起,即每1個凸起之尺寸變小,因此成為傳輸特性優異者。因此,藉由將微小前端粒子體積控制在較小之值,能提高傳輸特性。The mechanism by which the transport characteristics can be improved by controlling the volume of the tiny front particles is not necessarily clear, but it is considered to be as follows. Here, FIG. 9 shows a schematic cross-sectional view of protrusions (roughened particles) in which the boundary between the core portion and the protruding valley portion has been distinguished. As shown in FIG. 9 , the volume of the part where the core part of the protrusion coincides with the protrusion peak part per unit area (the part after removing the lower part of the protrusion corresponding to the protrusion valley part from the entire protrusion) is equal to Vmp+Vmc. Moreover, the peak apex density Spd represents the number of protrusions per unit area, so as shown in Figure 9, the result obtained by dividing Vmp+Vmc by Spd (=(Vmp+Vmc)/Spd) is equivalent to the number of tiny front particles per protrusion volume. Regarding this aspect, when it is assumed that Spd is the same (that is, the number of protrusions per unit area is the same) and Vmp+Vmc is different for two types of roughened surfaces, the size of the protrusions on the roughened surface with smaller Vmp+Vmc becomes smaller. Therefore, it is excellent in transmission characteristics. On the other hand, when it is assumed that Vmp+Vmc is the same (that is, the volume of the protrusion per unit area is the same) and that the Spd is different, the roughened surface with the larger Spd distributes the same volume to multiple The protrusions, that is, the size of each protrusion is reduced, so that the transmission characteristics are excellent. Therefore, by controlling the volume of the tiny front particles to a small value, the transmission characteristics can be improved.
對於會對傳輸特性或剝離強度產生影響之銅箔表面之粗化粒子分量及起伏分量,可藉由適當地使用雷射顯微鏡之測定倍率、以及S-濾波器及L-濾波器或截止值λs及λc來區分。具體而言,藉由於倍率200倍之高倍率下測定粗化處理面,能準確地評價會對傳輸特性產生影響之粗化處理面之細小凹凸。而且,藉由於S-濾波器之截止波長為0.3 μm且L-濾波器之截止波長為5 μm之條件下進行測定,能獲得起伏分量之影響得以消除之粗化粒子分量之參數。因此,本發明中之微小前端粒子體積、Vmp、Vmc、Vmp+Vmc、Spd及Sdr可謂確實地反映出銅箔表面之粗化粒子之參數者,藉由使用該等指標,能準確地評價傳輸特性。與此相對地,藉由於倍率20倍之低倍率下測定粗化處理面,能於較廣範圍內評價會對密接可靠性產生影響之粗化處理面整體之高度(起伏)。而且,藉由於不進行截止值λs或S-濾波器之截止且截止值λc或L-濾波器之截止波長為320 μm之條件下測定粗化處理面,能獲得反映出粗化粒子分量及起伏分量兩者之影響之粗化處理面整體之參數。因此,本發明中之Rdc、Sk及Sxp為不僅反映出銅箔表面之粗化粒子分量,亦反映處起伏分量之參數,藉由使用該等指標,能準確地評價剝離強度。For the roughened particle component and undulation component on the copper foil surface that will affect the transmission characteristics or peel strength, it can be determined by appropriately using the measurement magnification of the laser microscope, and the S-filter and L-filter or the cut-off value λs and λc to distinguish. Specifically, by measuring the roughened surface at a high magnification of 200 times, it is possible to accurately evaluate the fine unevenness of the roughened surface that affects transmission characteristics. Furthermore, by performing the measurement under the condition that the cutoff wavelength of the S-filter is 0.3 μm and the cutoff wavelength of the L-filter is 5 μm, the parameters of the roughened particle component in which the influence of the fluctuation component is eliminated can be obtained. Therefore, the small front particle volume, Vmp, Vmc, Vmp+Vmc, Spd and Sdr in the present invention can be said to be the parameters that truly reflect the roughened particles on the copper foil surface. By using these indicators, the transmission characteristics can be accurately evaluated. On the other hand, by measuring the roughened surface at a low magnification of 20 times, the height (waviness) of the entire roughened surface that affects adhesion reliability can be evaluated in a wide range. Furthermore, by measuring the roughened surface under the condition that the cut-off value λs or the cut-off value of the S-filter is not performed and the cut-off value λc or the cut-off wavelength of the L-filter is 320 μm, it is possible to obtain the roughened particle component and fluctuation The influence of both components is the parameter of the coarsening treatment surface as a whole. Therefore, Rdc, Sk, and Sxp in the present invention are parameters that not only reflect the roughened particle component of the copper foil surface, but also reflect the undulation component. By using these indicators, the peel strength can be accurately evaluated.
粗化處理銅箔之粗化處理面之切斷程度差Rdc為0.95 μm以上,較佳為1.10 μm以上20.00 μm以下,更佳為1.15 μm以上12.00 μm以下,進而較佳為1.20 μm以上6.00 μm以下,尤佳為1.25 μm以上4.00 μm以下。若為上述範圍內之Rdc,則能確保優異之傳輸特性,並且有效地發揮投錨效應而實現較高之剝離強度。The Rdc of the roughened surface of the roughened copper foil is 0.95 μm or more, preferably 1.10 μm or more and 20.00 μm or less, more preferably 1.15 μm or more and 12.00 μm or less, and more preferably 1.20 μm or more and 6.00 μm or less At most, it is preferably not less than 1.25 μm and not more than 4.00 μm. If the Rdc is within the above range, excellent transmission characteristics can be ensured, and the anchoring effect can be effectively exerted to achieve high peel strength.
粗化處理銅箔之粗化處理面之微小前端粒子體積為1.300 μm 3/個以下,較佳為0.300 μm 3/個以上1.300 μm 3/個以下,更佳為0.400 μm 3/個以上1.300 μm 3/個以下,進而較佳為0.500 μm 3/個以上1.300 μm 3/個以下,尤佳為0.500 μm 3/個以上1.200 μm 3/個以下。若為上述範圍內之微小前端粒子體積,則剝離強度較高,並且能實現優異之傳輸特性。 The volume of the tiny front-end particles on the roughened surface of the roughened copper foil is 1.300 μm 3 /unit or less, preferably 0.300 μm 3 /unit or more and 1.300 μm 3 /unit or less, more preferably 0.400 μm 3 /unit or more than 1.300 μm 3 /piece or less, more preferably 0.500 μm 3 /piece or more and 1.300 μm 3 /piece or less, particularly preferably 0.500 μm 3 /piece or more and 1.200 μm 3 /piece or less. If the volume of the front particle is small within the above range, the peel strength will be high and excellent transport characteristics will be realized.
粗化處理銅箔之粗化處理面之每單位面積之核心部實體體積Vmc較佳為0.360 μm 3/μm 2以下,更佳為0.040 μm 3/μm 2以上0.320 μm 3/μm 2以下,進而較佳為0.070 μm 3/μm 2以上0.290 μm 3/μm 2以下,尤佳為0.100 μm 3/μm 2以上0.260 μm 3/μm 2以下,最佳為0.130 μm 3/μm 2以上0.230 μm 3/μm 2以下。若為上述範圍內之Vmc,則易於將微小前端粒子體積控制在上述範圍內,並且剝離強度較高,且能實現更優異之傳輸特性。 The core portion solid volume Vmc per unit area of the roughened surface of the roughened copper foil is preferably 0.360 μm 3 /μm 2 or less, more preferably 0.040 μm 3 /μm 2 or more and 0.320 μm 3 /μm 2 or less, and further Preferably at least 0.070 μm 3 /μm 2 and at least 0.290 μm 3 /μm 2 , especially preferably at least 0.100 μm 3 /μm 2 and at least 0.260 μm 3 /μm 2 , most preferably at least 0.130 μm 3 /μm 2 and at least 0.230 μm 3 / μm 2 or less. If the Vmc is within the above-mentioned range, it is easy to control the volume of the tiny front particles within the above-mentioned range, and the peeling strength is high, and more excellent transmission characteristics can be realized.
粗化處理銅箔之粗化處理面之突出峰部實體體積Vmp及核心部實體體積Vmc之和即Vmp+Vmc較佳為0.380 μm 3/μm 2以下,更佳為0.050 μm 3/μm 2以上0.340 μm 3/μm 2以下,進而較佳為0.090 μm 3/μm 2以上0.310 μm 3/μm 2以下,尤佳為0.130 μm 3/μm 2以上0.280 μm 3/μm 2以下,最佳為0.140 μm 3/μm 2以上0.250 μm 3/μm 2以下。若為上述範圍內之Vmp+Vmc,則易於將微小前端粒子體積控制在上述範圍內,剝離強度較高,並且能實現更優異之傳輸特性。 The sum of the protruding peak volume Vmp and the core volume Vmc of the roughened surface of the roughened copper foil, namely Vmp+Vmc, is preferably 0.380 μm 3 /μm 2 or less, more preferably 0.050 μm 3 /μm 2 or more than 0.340 μm 3 /μm 2 or less, more preferably 0.090 μm 3 /μm 2 or more, 0.310 μm 3 /μm 2 or less, particularly preferably 0.130 μm 3 /μm 2 or more and 0.280 μm 3 /μm 2 or less, most preferably 0.140 μm 3 /μm 2 μm 2 or more and 0.250 μm 3 /μm 2 or less. If Vmp+Vmc is within the above range, it is easy to control the volume of the tiny front particles within the above range, the peel strength is high, and more excellent transmission characteristics can be realized.
粗化處理銅箔之粗化處理面之每單位面積之峰頂點密度Spd較佳為0.12個/μm 2以上0.46個/μm 2以下,更佳為0.13個/μm 2以上0.44個/μm 2以下,進而較佳為0.14個/μm 2以上0.37個/μm 2以下,尤佳為0.15個/μm 2以上0.31個/μm 2以下,最佳為0.16個/μm 2以上0.28個/μm 2以下。若為上述範圍內之Spd,則易於將微小前端粒子體積控制在上述範圍內,剝離強度較高,並且能實現更優異之傳輸特性。 The peak apex density Spd per unit area of the roughened surface of the roughened copper foil is preferably 0.12 to 0.46/μm 2 , more preferably 0.13 to 0.44 /μm 2 , more preferably 0.14 to 0.37/μm 2 , more preferably 0.15 to 0.31/μm 2 , most preferably 0.16 to 0.28/μm 2 . If the Spd is within the above range, it is easy to control the volume of the tiny front particles within the above range, the peel strength is high, and more excellent transmission characteristics can be realized.
粗化處理銅箔之粗化處理面之界面展開面積比Sdr較佳為70%以下,更佳為5%以上65%以下,進而較佳為10%以上60%以下,尤佳為15%以上55%以下,最佳為20%以上50%以下。若為上述範圍內之Sdr,則成為便於確保較高之剝離強度並且實現更優異之傳輸特性之凹凸較多之形狀。The interface development area ratio Sdr of the roughened surface of the roughened copper foil is preferably 70% or less, more preferably 5% or more and 65% or less, further preferably 10% or more and 60% or less, and most preferably 15% or more Less than 55%, preferably more than 20% and less than 50%. If it is Sdr in the said range, it will become a shape with many unevenness|corrugation conveniently for securing high peel strength and realizing more excellent transmission characteristic.
粗化處理銅箔之粗化處理面之核心部程度差Sk較佳為1.50 μm以上,更佳為1.58 μm以上20.00 μm以下,進而較佳為1.65 μm以上12.00 μm以下,尤佳為1.70 μm以上8.00 μm以下,最佳為2.00 μm以上6.00 μm以下。若為上述範圍內之Sk,則傳輸特性優異,並且能有效地發揮投錨效應而實現較高之剝離強度。The core portion degree difference Sk of the roughened surface of the roughened copper foil is preferably 1.50 μm or more, more preferably 1.58 μm or more and 20.00 μm or less, further preferably 1.65 μm or more and 12.00 μm or less, and most preferably 1.70 μm or more 8.00 μm or less, preferably 2.00 μm or more and 6.00 μm or less. When Sk is within the above range, the transmission characteristics are excellent, and the anchoring effect can be effectively exhibited to realize high peel strength.
粗化處理銅箔之粗化處理面之極點高度Sxp較佳為1.10 μm以上,更佳為1.20 μm以上20.00 μm以下,進而較佳為1.30 μm以上12.00 μm以下,尤佳為1.40 μm以上8.00 μm以下,最佳為1.70 μm以上6.00 μm以下。若為上述範圍內之極點高度Sxp,則傳輸特性優異,並且能有效地發揮投錨效應而實現較高之剝離強度。The pole height Sxp of the roughened surface of the roughened copper foil is preferably 1.10 μm or more, more preferably 1.20 μm or more and 20.00 μm or less, further preferably 1.30 μm or more and 12.00 μm or less, especially preferably 1.40 μm or more and 8.00 μm or less Below, preferably 1.70 μm or more and 6.00 μm or less. When the pole height Sxp is within the above range, the transmission characteristics are excellent, and the anchoring effect can be effectively exerted to realize high peel strength.
粗化處理銅箔之厚度並無特別限定,較佳為0.1 μm以上210 μm以下,更佳為0.3 μm以上105 μm以下。再者,本發明之粗化處理銅箔並不限於對通常之銅箔之表面進行粗化處理所得者,亦可為對附載子之銅箔之銅箔表面進行粗化處理或微細粗化處理所得者。The thickness of the roughened copper foil is not particularly limited, but is preferably not less than 0.1 μm and not more than 210 μm, more preferably not less than 0.3 μm and not more than 105 μm. Furthermore, the roughened copper foil of the present invention is not limited to those obtained by roughening the surface of ordinary copper foils, and may also be roughened or micro-roughened on the surface of copper foils with carriers. earner.
將本發明之粗化處理銅箔之一例示於圖10中。如圖10所示,本發明之粗化處理銅箔可藉由對具有特定之起伏之銅箔表面(例如電解銅箔之析出面)於所期望之低粗化條件下進行粗化處理而形成微細之粗化粒子,從而較佳地製造。因此,根據本發明之較佳之態樣,粗化處理銅箔為電解銅箔,粗化處理面存在於電解銅箔之析出面側。再者,粗化處理銅箔可為於兩側具有粗化處理面者,亦可為僅於一側具有粗化處理面者。粗化處理面典型而言具備複數個粗化粒子,該等複數個粗化粒子較佳為分別包含銅粒子。銅粒子可為包含金屬銅者,亦可為包含銅合金者。An example of the roughened copper foil of the present invention is shown in FIG. 10 . As shown in Figure 10, the roughened copper foil of the present invention can be formed by roughening the surface of the copper foil with specific undulations (such as the deposition surface of the electrolytic copper foil) under desired low roughening conditions Fine roughened particles are better produced. Therefore, according to a preferred aspect of the present invention, the roughened copper foil is an electrolytic copper foil, and the roughened surface exists on the deposition surface side of the electrolytic copper foil. Furthermore, the roughened copper foil may have a roughened surface on both sides, or may have a roughened surface only on one side. Typically, the roughened surface has a plurality of roughened particles, and it is preferable that the plurality of roughened particles each contain copper particles. Copper particles may contain metallic copper or may contain a copper alloy.
用以形成粗化處理面之粗化處理可藉由於銅箔之上以銅或銅合金形成粗化粒子而較佳地進行。進行粗化處理之前之銅箔可為未粗化之銅箔,亦可為已實施預粗化者。關於進行粗化處理之銅箔之表面,依據JIS B0601-1994所測得之十點平均粗糙度Rz較佳為1.50 μm以上20.00 μm以下,更佳為2.00 μm以上10.00 μm以下。若為上述範圍內,則易於將本發明之粗化處理銅箔所要求之表面分佈賦予至粗化處理面。The roughening treatment for forming the roughened surface can be preferably performed by forming roughening particles with copper or copper alloy on the copper foil. The copper foil before the roughening treatment may be unroughened copper foil, or pre-roughened. Regarding the surface of the copper foil to be roughened, the ten-point average roughness Rz measured in accordance with JIS B0601-1994 is preferably from 1.50 μm to 20.00 μm, more preferably from 2.00 μm to 10.00 μm. If it is in the said range, it will become easy to provide the surface distribution required for the roughening process copper foil of this invention to a roughening process surface.
粗化處理例如較佳為於銅濃度為7 g/L以上17 g/L以下且硫酸濃度為50 g/L以上200 g/L以下之硫酸銅溶液中,在20℃以上40℃以下之溫度下,以10 A/dm 2以上50 A/dm 2以下進行電解析出。該電解析出較佳為於0.5秒以上30秒以下進行,更佳為於1秒以上30秒以下進行,進而較佳為於1秒以上3秒以下進行。但本發明之粗化處理銅箔並不限於上述方法,可為藉由任意方法所製造者。 Roughening treatment, for example, is preferably performed at a temperature of 20°C to 40°C in a copper sulfate solution with a copper concentration of 7 g/L to 17 g/L and a sulfuric acid concentration of 50 g/L to 200 g/L. Under this condition, the electrolytic precipitation is performed at 10 A/dm 2 or more and 50 A/dm 2 or less. The electrolysis is preferably performed in a range of 0.5 seconds to 30 seconds, more preferably in a range of 1 second to 30 seconds, and still more preferably in a range of 1 second to 3 seconds. However, the roughened copper foil of the present invention is not limited to the above method, and may be manufactured by any method.
上述電解析出時,較佳為使下述式: R L=L/D C(式中,R L為溶液電阻指數(mm·L/mol),L為極間(陽極-陰極間)距離(mm),D C為電荷載體密度(mol/L)) 所定義之溶液電阻指數R L為9.0 mm・L/mol以上20.0 mm・L/mol以下,更佳為11.0 mm・L/mol以上17.0 mm・L/mol以下。藉由以此方式增大溶液電阻指數R L,而系統整體之電壓變大,凸起形成反應時之電壓亦變大。從而對凸起形狀產生影響,結果能較佳地形成適於賦予本發明之粗化處理銅箔所要求之表面分佈的形狀之凸起。再者,電荷載體密度D C可藉由對存在於鍍覆液中之所有離子,合計出各離子濃度及價數之積而算出。例如,於使用硫酸銅溶液作為鍍覆液之情形時,電荷載體密度D C可根據下述式而算出,即: Dc=[H +]×1+[Cu 2+]×2+[SO 4 2-]×2 (式中,[H +]為溶液中之氫離子濃度(mol/L),[Cu 2+]為溶液中之銅離子濃度(mol/L),[SO 4 2-]為溶液中之硫酸離子濃度(mol/L))。 When the above-mentioned electrolysis is separated out, it is preferred to make the following formula: R L =L/D C (wherein, R L is the solution resistance index (mm L/mol), and L is the distance between the poles (anode-cathode) (mm), D C is the charge carrier density (mol/L)) The solution resistance index R L defined is 9.0 mm・L/mol or more, 20.0 mm・L/mol or less, more preferably 11.0 mm・L/mol or more Below 17.0 mm・L/mol. By increasing the solution resistance index RL in this way, the voltage of the whole system becomes larger, and the voltage at the time of the bump formation reaction also becomes larger. This influences the shape of the protrusions, and as a result, protrusions of a shape suitable for imparting the surface distribution required for the roughened copper foil of the present invention can be preferably formed. Furthermore, the charge carrier density D C can be calculated by summing up the product of each ion concentration and valence number for all ions present in the plating solution. For example, when copper sulfate solution is used as the plating solution, the charge carrier density D C can be calculated according to the following formula: Dc=[H + ]×1+[Cu 2+ ]×2+[SO 4 2- ]×2 (where [H + ] is the hydrogen ion concentration (mol/L) in the solution, [Cu 2+ ] is the copper ion concentration (mol/L) in the solution, [SO 4 2- ] is the solution The sulfate ion concentration in (mol/L)).
溶液電阻指數R L與電壓之關係係如以下所說明。首先,根據歐姆定律導出下述式: V=ρ×L×I/S (式中,V為電壓,ρ為比電阻,L為極間距離,I為電流,S為極間之截面面積)。 即,電壓V與比電阻ρ、極間距離L及電流密度(=I/S)成正比。而且,比電阻ρ與上述電荷載體密度D C成反比。因此,於電流密度固定之情形時,藉由使(與極間距離L成正比,與電荷載體密度D C成反比之)溶液電阻指數變大,而電壓亦變大。因此,溶液電阻指數可謂與溶液之電阻存在關聯之指標。 The relationship between the solution resistance index R L and the voltage is as explained below. First, the following formula is derived according to Ohm's law: V=ρ×L×I/S (where V is the voltage, ρ is the specific resistance, L is the distance between electrodes, I is the current, and S is the cross-sectional area between the electrodes) . That is, the voltage V is proportional to the specific resistance ρ, the inter-electrode distance L, and the current density (=I/S). Also, the specific resistance ρ is inversely proportional to the above-mentioned charge carrier density D C . Therefore, when the current density is fixed, by increasing the solution resistance index (proportional to the inter-electrode distance L and inversely proportional to the charge carrier density D C ), the voltage also increases. Therefore, the solution resistance index can be regarded as an index related to the resistance of the solution.
視需要,粗化處理銅箔亦可為實施了防銹處理而形成有防銹處理層者。防銹處理較佳為包含使用鋅之鍍覆處理。使用鋅之鍍覆處理可為鍍鋅處理及鍍鋅合金處理中之任一者,鍍鋅合金處理尤佳為鋅-鎳合金處理。鋅-鎳合金處理只要為至少包含Ni及Zn之鍍覆處理即可,亦可進而包含Sn、Cr、Co、Mo等其他元素。例如,藉由防銹處理層除了Ni及Zn以外還包含Mo,而粗化處理銅箔之處理表面成為與樹脂之密接性、耐化學品性及耐熱性更優異,且蝕刻殘渣不易殘留者。鋅-鎳合金鍍覆中之Ni/Zn附著比率以質量比計較佳為1.2以上10以下,更佳為2以上7以下,進而較佳為2.7以上4以下。又,防銹處理較佳為進而包含鉻酸鹽處理,該鉻酸鹽處理更佳為於使用鋅之鍍覆處理之後,於包含鋅之鍍覆之表面進行。藉此,能進一步提高防銹性。尤佳之防銹處理係鋅-鎳合金鍍覆處理與其後之鉻酸鹽處理之組合。If necessary, the roughened copper foil may be provided with an antirust treatment to form an antirust treatment layer. The antirust treatment preferably includes plating treatment using zinc. The plating treatment using zinc may be any one of zinc plating treatment and zinc alloy plating treatment, and zinc alloy plating treatment is particularly preferably zinc-nickel alloy treatment. The zinc-nickel alloy treatment only needs to be a plating treatment including at least Ni and Zn, and may further include other elements such as Sn, Cr, Co, and Mo. For example, since the antirust treatment layer contains Mo in addition to Ni and Zn, the treated surface of the roughened copper foil has better adhesion to resin, chemical resistance, and heat resistance, and the etching residue is less likely to remain. The Ni/Zn adhesion ratio in the zinc-nickel alloy plating is preferably from 1.2 to 10 in mass ratio, more preferably from 2 to 7, and still more preferably from 2.7 to 4. Moreover, it is preferable that antirust treatment further includes chromate treatment, and this chromate treatment is more preferably performed on the surface of the plating containing zinc after the plating treatment using zinc. Thereby, rust resistance can be further improved. A preferred antirust treatment is a combination of zinc-nickel alloy plating followed by chromate treatment.
視需要,粗化處理銅箔亦可為於表面實施矽烷偶合劑處理而形成有矽烷偶合劑處理層者。藉此,能提高耐濕性、耐化學品性及與接著劑等之密接性等。矽烷偶合劑處理層可藉由將矽烷偶合劑適當稀釋後塗佈,並使其乾燥而形成。作為矽烷偶合劑之例,可例舉:4-縮水甘油基丁基三甲氧基矽烷、3-縮水甘油氧基丙基三甲氧基矽烷等環氧基官能性矽烷偶合劑;3-胺基丙基三乙氧基矽烷、N-(2-胺基乙基)-3-胺基丙基三甲氧基矽烷、N-3-(4-(3-胺基丙氧基)丁氧基)丙基-3-胺基丙基三甲氧基矽烷、N-苯基-3-胺基丙基三甲氧基矽烷等胺基官能性矽烷偶合劑;3-巰基丙基三甲氧基矽烷等巰基官能性矽烷偶合劑;乙烯基三甲氧基矽烷、乙烯基苯基三甲氧基矽烷等烯烴官能性矽烷偶合劑;3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-丙烯醯氧基丙基三甲氧基矽烷等丙烯酸官能性矽烷偶合劑;咪唑矽烷等咪唑官能性矽烷偶合劑;或三𠯤矽烷等三𠯤官能性矽烷偶合劑等。If necessary, the roughened copper foil may be treated with a silane coupling agent on the surface to form a layer treated with a silane coupling agent. Thereby, moisture resistance, chemical resistance, adhesiveness with an adhesive, etc. can be improved. The silane coupling agent-treated layer can be formed by appropriately diluting the silane coupling agent, applying it, and drying it. Examples of silane coupling agents include epoxy-functional silane coupling agents such as 4-glycidylbutyltrimethoxysilane and 3-glycidyloxypropyltrimethoxysilane; Triethoxysilane, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, N-3-(4-(3-aminopropoxy)butoxy)propane Amino-functional silane coupling agents such as -3-aminopropyltrimethoxysilane and N-phenyl-3-aminopropyltrimethoxysilane; mercapto-functional silanes such as 3-mercaptopropyltrimethoxysilane Silane coupling agent; olefin functional silane coupling agent such as vinyltrimethoxysilane and vinylphenyltrimethoxysilane; 3-methacryloxypropyltrimethoxysilane, 3-acryloxypropyl Acrylic functional silane coupling agents such as trimethoxysilane; imidazole functional silane coupling agents such as imidazole silane;
基於上述理由,粗化處理銅箔較佳為於粗化處理面上進而具備防銹處理層及/或矽烷偶合劑處理層,更佳為具備防銹處理層及矽烷偶合劑處理層兩者。防銹處理層及矽烷偶合劑處理層可不僅形成於粗化處理銅箔之粗化處理面側,亦形成於未形成粗化處理面之側。Based on the above reasons, the roughened copper foil is preferably provided with an antirust treatment layer and/or a silane coupling agent treatment layer on the roughened surface, more preferably with both the antirust treatment layer and the silane coupling agent treatment layer. The antirust treatment layer and the silane coupling agent treatment layer may be formed not only on the roughened surface side of the roughened copper foil but also on the side where the roughened surface is not formed.
銅箔積層板本發明之粗化處理銅箔較佳為用於製造印刷佈線板用銅箔積層板。即,根據本發明之較佳之態樣,提供一種具備上述粗化處理銅箔之銅箔積層板。藉由使用本發明之粗化處理銅箔,可令銅箔積層板兼具優異之傳輸特性與較高之剝離強度。該銅箔積層板構成為具備本發明之粗化處理銅箔及與該粗化處理銅箔之粗化處理面密接地設置之樹脂層。粗化處理銅箔可設置於樹脂層之單面,亦可設置於雙面。樹脂層構成為包含樹脂,較佳為絕緣性樹脂。樹脂層較佳為預浸體及/或樹脂片材。所謂預浸體,係指使合成樹脂板、玻璃板、玻璃織布、玻璃不織布、紙等基材含浸合成樹脂而成之複合材料之總稱。作為絕緣性樹脂之較佳之例,可例舉:環氧樹脂、氰酸酯樹脂、雙馬來醯亞胺三𠯤樹脂(BT樹脂)、聚苯醚樹脂、酚系樹脂等。又,作為構成樹脂片材之絕緣性樹脂之例,可例舉:環氧樹脂、聚醯亞胺樹脂、聚酯樹脂等絕緣樹脂。又,就提高絕緣性等之觀點而言,樹脂層中亦可含有包含氧化矽、氧化鋁等各種無機粒子之填料粒子等。樹脂層之厚度並無特別限定,較佳為1 μm以上1000 μm以下,更佳為2 μm以上400 μm以下,進而較佳為3 μm以上200 μm以下。樹脂層可包含複數個層。預浸體及/或樹脂片材等樹脂層亦可隔著預先塗佈於銅箔表面之底塗樹脂層設置於粗化處理銅箔。 Copper-clad laminated board It is preferable that the roughened copper foil of this invention is used for manufacturing the copper-clad laminated board for printed wiring boards. That is, according to a preferable aspect of this invention, the copper foil laminated board provided with the said roughening process copper foil is provided. By using the roughened copper foil of the present invention, the copper foil laminate can have both excellent transmission characteristics and high peel strength. This copper-clad laminate is comprised including the roughening process copper foil of this invention, and the resin layer provided in close contact with the roughening process surface of this roughening process copper foil. Roughened copper foil can be placed on one side of the resin layer or on both sides. The resin layer is composed of resin, preferably insulating resin. The resin layer is preferably a prepreg and/or a resin sheet. The so-called prepreg is a general term for composite materials obtained by impregnating base materials such as synthetic resin boards, glass boards, glass woven fabrics, glass non-woven fabrics, and paper with synthetic resins. Preferable examples of insulating resins include epoxy resins, cyanate resins, bismaleimide tristannium resins (BT resins), polyphenylene ether resins, and phenolic resins. Moreover, examples of the insulating resin constituting the resin sheet include insulating resins such as epoxy resins, polyimide resins, and polyester resins. In addition, from the viewpoint of improving insulation, etc., filler particles including various inorganic particles such as silicon oxide and aluminum oxide may be contained in the resin layer. The thickness of the resin layer is not particularly limited, but is preferably from 1 μm to 1000 μm, more preferably from 2 μm to 400 μm, and still more preferably from 3 μm to 200 μm. The resin layer may contain a plurality of layers. Resin layers such as prepregs and/or resin sheets can also be provided on the roughened copper foil via a primer resin layer coated on the surface of the copper foil in advance.
印刷佈線板本發明之粗化處理銅箔較佳為用於製造印刷佈線板。即,根據本發明之較佳之態樣,提供一種具備上述粗化處理銅箔之印刷佈線板。藉由使用本發明之粗化處理銅箔,可令印刷佈線板兼具優異之傳輸特性與較高之剝離強度。本態樣之印刷佈線板構成為包含樹脂層與銅層積層而成之層構成。銅層係源自本發明之粗化處理銅箔之層。又,樹脂層係如上文中關於銅箔積層板所述。總之,印刷佈線板可採用公知之層構成。作為關於印刷佈線板之具體例,可例舉:於預浸體之單面或雙面接著本發明之粗化處理銅箔並使其硬化而製成積層體,然後形成電路所得之單面或雙面印刷佈線板;或將其等多層化而成之多層印刷佈線板等。又,作為其他之具體例,亦可例舉:於樹脂膜上形成本發明之粗化處理銅箔而形成電路之撓性印刷佈線板、COF(Chip On Film,薄膜覆晶)、TAB(Tape Automated Bonding,捲帶式自動接合)帶等。作為另外之具體例,可例舉:於本發明之粗化處理銅箔上塗佈上述樹脂層而形成附樹脂之銅箔(RCC),將樹脂層作為絕緣接著材層積層於上述印刷基板,然後將粗化處理銅箔作為佈線層之全部或一部分,利用改良型半加成法(MSAP)、減成法等方法形成電路所得之增層佈線板;去除粗化處理銅箔後利用半加成法(SAP)形成電路所得之增層佈線板;及於半導體積體電路上交替地反覆進行附樹脂之銅箔之積層與電路形成之晶圓上直接增層(direct buildup on wafer)等。 [實施例] Printed Wiring Board The roughened copper foil of the present invention is preferably used in the manufacture of printed wiring boards. That is, according to a preferable aspect of this invention, the printed wiring board provided with the said roughening process copper foil is provided. By using the roughened copper foil of the present invention, the printed wiring board can have both excellent transmission characteristics and high peel strength. The printed wiring board of this aspect has a laminated layer structure including a resin layer and a copper layer. The copper layer is a layer derived from the roughened copper foil of the present invention. Also, the resin layer system is as described above for the copper foil laminate. In short, the printed wiring board can be constructed using known layers. As a specific example of a printed wiring board, one or both sides of a prepreg are bonded with the roughened copper foil of the present invention and hardened to form a laminate, and then a circuit is formed on one or both sides of the prepreg. Double-sided printed wiring boards; or multilayer printed wiring boards made by multilayering them. In addition, as other specific examples, flexible printed wiring boards, COF (Chip On Film, chip on film), TAB (Tape Automated Bonding, tape-and-reel automatic bonding) belt, etc. As another specific example, the above-mentioned resin layer is coated on the roughened copper foil of the present invention to form a resin-coated copper foil (RCC), and the resin layer is laminated on the above-mentioned printed circuit board as an insulating adhesive layer, Then use the roughened copper foil as all or part of the wiring layer, and use the modified semi-additive method (MSAP), subtractive method, etc. to form a circuit-based build-up wiring board; The build-up wiring board obtained by forming the circuit by the SAP method; and the direct buildup on wafer, which alternately repeats the lamination of the resin-attached copper foil and the circuit formation on the semiconductor integrated circuit. [Example]
藉由以下示例對本發明進行更具體之說明。The present invention is described more specifically by the following examples.
例 1 ~ 15以如下方式進行本發明之粗化處理銅箔之製造。 Examples 1 to 15 produced the roughened copper foil of the present invention in the following manner.
(1)電解銅箔之製造 關於例1~9及11~15,使用如下所示之組成之硫酸酸性硫酸銅溶液作為銅電解液,陰極使用鈦製之電極,陽極使用DSA(尺寸穩定性陽極),於溶液溫度45℃、電流密度55 A/dm 2下進行電解,獲得表1所示之厚度之電解銅箔A。此時,使用經#1000之拋光輪研磨表面而調整表面粗糙度後之電極作為陰極。 <硫酸酸性硫酸銅溶液之組成> - 銅濃度:80 g/L - 硫酸濃度:300 g/L - 動物膠(glue)濃度:5 mg/L - 氯濃度:30 mg/L (1) Manufacture of electrolytic copper foil Regarding Examples 1 to 9 and 11 to 15, a sulfuric acid copper sulfate solution having the composition shown below was used as the copper electrolyte, a titanium electrode was used for the cathode, and a DSA (dimensionally stable anode) was used for the anode. ), electrolysis was carried out at a solution temperature of 45°C and a current density of 55 A/dm 2 to obtain electrolytic copper foil A with the thickness shown in Table 1. At this time, the electrode whose surface roughness was adjusted by polishing the surface with a #1000 buff was used as a cathode. <Composition of sulfuric acid copper sulfate solution> - Copper concentration: 80 g/L - Sulfuric acid concentration: 300 g/L - Glue concentration: 5 mg/L - Chlorine concentration: 30 mg/L
另一方面,關於例10,使用如下所示之組成之硫酸酸性硫酸銅溶液作為銅電解液,獲得表1所示之厚度之電解銅箔B。此時,除硫酸酸性硫酸銅溶液之組成以外之條件與電解銅箔A相同。 <硫酸酸性硫酸銅溶液之組成> - 銅濃度:80 g/L - 硫酸濃度:260 g/L - 雙(3-磺丙基)二硫化物濃度:30 mg/L - 二烯丙基二甲基氯化銨聚合物濃度:50 mg/L - 氯濃度:40 mg/L On the other hand, regarding Example 10, electrolytic copper foil B having the thickness shown in Table 1 was obtained using a sulfuric acid copper sulfate solution having the composition shown below as a copper electrolytic solution. At this time, the conditions were the same as those of the electrolytic copper foil A except for the composition of the sulfuric acid acidic copper sulfate solution. <Composition of sulfuric acid copper sulfate solution> - Copper concentration: 80 g/L - Sulfuric acid concentration: 260 g/L - Concentration of bis(3-sulfopropyl)disulfide: 30 mg/L - Diallyldimethylammonium chloride polymer concentration: 50 mg/L - Chlorine concentration: 40 mg/L
(2)粗化處理 於上述電解銅箔所具備之電極面及析出面中,關於例1~6、10及12~15,對析出面側進行粗化處理,關於例7~9及11,對電極面側進行粗化處理。再者,例1~6、10及12~15中所使用之電解銅箔之析出面、以及例7~9及11中所使用之電解銅箔之電極面之使用接觸式表面粗糙度計依據JIS B0601-1994所測得之十點平均粗糙度Rz如表1所示。 (2) Coarsening treatment Among the electrode surface and deposition surface of the above-mentioned electrolytic copper foil, for Examples 1 to 6, 10 and 12 to 15, the deposition surface side was roughened, and for Examples 7 to 9 and 11, the electrode surface side was roughened. treatment. Furthermore, the deposition surface of the electrodeposited copper foil used in Examples 1 to 6, 10 and 12 to 15, and the electrode surface of the electrodeposited copper foil used in Examples 7 to 9 and 11 were based on the use of a contact surface roughness meter Table 1 shows the ten-point average roughness Rz measured in JIS B0601-1994.
關於例1~8,進行如下所示之粗化處理(第一粗化處理)。該粗化處理係藉由於粗化處理用銅電解溶液(銅濃度:7 g/L以上17 g/L以下,硫酸濃度:50 g/L以上200 g/L以下,液溫:30℃)中,按表1中針對各例分別示出之溶液電阻指數、電流密度及時間之條件進行電解、水洗來進行。About Examples 1-8, the roughening process (1st roughening process) shown below was performed. The roughening treatment is carried out in the copper electrolytic solution for roughening treatment (copper concentration: 7 g/L to 17 g/L, sulfuric acid concentration: 50 g/L to 200 g/L, liquid temperature: 30°C) According to the conditions of solution resistance index, current density and time shown in Table 1 for each example, electrolysis and water washing are carried out.
關於例9~15,依序進行如下所示之第一粗化處理、第二粗化處理及第三粗化處理。 - 第一粗化處理係藉由於粗化處理用銅電解溶液(銅濃度:7 g/L以上17 g/L以下,硫酸濃度:50 g/L以上200 g/L以下,液溫:30℃)中,按表1所示之溶液電阻指數、電流密度及時間之條件進行電解、水洗來進行。 - 第二粗化處理係藉由於組成與第一粗化處理相同之粗化處理用銅電解溶液中,按表1所示之溶液電阻指數、電流密度及時間之條件進行電解、水洗來進行。 - 第三粗化處理係藉由於粗化處理用銅電解溶液(銅濃度:65 g/L以上80 g/L以下,硫酸濃度:50 g/L以上200 g/L以下,液溫:45℃)中,按表1所示之溶液電阻指數、電流密度及時間之條件進行電解、水洗來進行。 About Examples 9-15, the 1st roughening process, the 2nd roughening process, and the 3rd roughening process shown below were performed sequentially. - The first roughening treatment is by copper electrolytic solution for roughening treatment (copper concentration: 7 g/L to 17 g/L, sulfuric acid concentration: 50 g/L to 200 g/L, liquid temperature: 30°C ), electrolysis and water washing were carried out according to the conditions of solution resistance index, current density and time shown in Table 1. - The second roughening treatment is carried out by performing electrolysis and water washing according to the conditions of solution resistance index, current density and time shown in Table 1 in the copper electrolytic solution for roughening treatment with the same composition as the first roughening treatment. - The third roughening treatment is to use copper electrolytic solution for roughening treatment (copper concentration: 65 g/L to 80 g/L, sulfuric acid concentration: 50 g/L to 200 g/L, liquid temperature: 45°C ), electrolysis and water washing were carried out according to the conditions of solution resistance index, current density and time shown in Table 1.
(3)防銹處理
對粗化處理後之電解銅箔進行表1所示之防銹處理。作為該防銹處理,關於例1~5、7及8,對電解銅箔之已進行粗化處理之面,使用焦磷酸浴,於焦磷酸鉀濃度100 g/L、鋅濃度1 g/L、鎳濃度2 g/L、鉬濃度1 g/L、液溫40℃、電流密度0.5 A/dm
2下進行鋅-鎳-鉬系防銹處理。又,對電解銅箔之未進行粗化處理之面,使用焦磷酸浴,設為焦磷酸鉀濃度80 g/L、鋅濃度0.2 g/L、鎳濃度2 g/L、液溫40℃、電流密度0.5 A/dm
2而進行鋅-鎳系防銹處理。另一方面,關於例6及9~15,對電解銅箔之雙面,於與例1~5、7及8中之電解銅箔之未進行粗化處理之面相同之條件下進行鋅-鎳系防銹處理。
(3) Anti-rust treatment The anti-rust treatment shown in Table 1 was performed on the electrolytic copper foil after the roughening treatment. As this antirust treatment, regarding Examples 1 to 5, 7 and 8, the roughened surface of the electrolytic copper foil was treated with a pyrophosphoric acid bath at a concentration of potassium pyrophosphate of 100 g/L and a concentration of zinc of 1 g/L. , nickel concentration 2 g/L, molybdenum concentration 1 g/L,
(4)鉻酸鹽處理 對已進行上述防銹處理之電解銅箔之雙面,進行鉻酸鹽處理,於防銹處理層之上形成鉻酸鹽層。該鉻酸鹽處理係於鉻酸濃度1 g/L、pH值11、液溫25℃及電流密度1 A/dm 2之條件下進行。 (4) Chromate treatment Chromate treatment is performed on both sides of the electrolytic copper foil that has been subjected to the above-mentioned antirust treatment, and a chromate layer is formed on the antirust treatment layer. The chromate treatment was carried out under the conditions of chromic acid concentration 1 g/L, pH value 11, liquid temperature 25°C and current density 1 A/dm 2 .
(5)矽烷偶合劑處理 對已實施上述鉻酸鹽處理之銅箔進行水洗,其後立即進行矽烷偶合劑處理,使粗化處理面之鉻酸鹽層上吸附矽烷偶合劑。該矽烷偶合劑處理係藉由利用環狀淋浴裝置(shower ring)向粗化處理面吹送以純水為溶劑之矽烷偶合劑之溶液而進行吸附處理來進行。作為矽烷偶合劑,於例1及3~8中使用3-胺基丙基三甲氧基矽烷,於例2及9~15中使用3-縮水甘油氧基丙基三甲氧基矽烷。矽烷偶合劑之濃度均設為3 g/L。於矽烷偶合劑之吸附後,最終利用電熱器使水分蒸發,獲得特定厚度之粗化處理銅箔。 (5) Silane coupling agent treatment Wash the copper foil that has been subjected to the above chromate treatment, and then immediately perform silane coupling agent treatment, so that the chromate layer on the roughened surface is adsorbed on the silane coupling agent. The silane coupling agent treatment is carried out by blowing a solution of a silane coupling agent using pure water as a solvent to the roughened surface using a shower ring to perform adsorption treatment. As the silane coupling agent, 3-aminopropyltrimethoxysilane was used in Examples 1 and 3-8, and 3-glycidyloxypropyltrimethoxysilane was used in Examples 2 and 9-15. The concentration of the silane coupling agent was set at 3 g/L. After the silane coupling agent is adsorbed, the electric heater is finally used to evaporate the water to obtain a roughened copper foil with a specific thickness.
[表1]
評價對所製造之粗化處理銅箔,進行如下所示之各種評價。 Evaluation Various evaluations shown below were performed on the produced roughened copper foil.
(a)粗化處理面之表面性狀參數
藉由使用雷射顯微鏡(奧林巴斯股份有限公司製造之OLS-5000)之表面粗糙度解析,依據ISO25178或JIS B0601-2013進行粗化處理銅箔之粗化處理面之測定。此時,關於Spd、Vmp、Vmc及Sdr,如表2所示,將測定倍率設為200倍(物鏡倍率100倍×光學變焦2倍)來進行測定,關於Rdc、Sk及Sxp,如表3所示,將測定倍率設為20倍(物鏡倍率20倍)來進行測定。其他具體之測定條件係如表2及3所示。按照表2及3所示之條件對所獲得之粗化處理面之表面分佈進行解析,計算Spd、Vmp、Vmc、Sdr、Rdc、Sk及Sxp。又,基於所獲得之Spd、Vmp及Vmc之值,計算Vmp+Vmc及微小前端粒子體積(=(Vmp+Vmc)/Spd)。結果如表4所示。
(a) Surface texture parameters of the roughened surface
Measurement of the roughened surface of the roughened copper foil was carried out in accordance with ISO25178 or JIS B0601-2013 by surface roughness analysis using a laser microscope (OLS-5000 manufactured by Olympus Co., Ltd.). At this time, Spd, Vmp, Vmc, and Sdr are as shown in Table 2, and the measurement magnification is set to 200 times (
[表2]
[表3]
(b)銅箔-基材間之剝離強度 為了對常溫及多濕環境下之粗化處理銅箔,評價與絕緣基材之密接性,以如下方式進行常態剝離強度及耐濕剝離強度之測定。 (b) Peel strength between copper foil and substrate In order to evaluate the adhesion to the insulating base material of the roughened copper foil under normal temperature and high humidity environment, the normal-state peel strength and moisture-resistant peel strength were measured in the following manner.
(b-1)常態剝離強度 作為絕緣基材,準備2片以聚苯醚、異氰尿酸三烯丙酯及雙馬來醯亞胺樹脂為主成分之預浸體(厚度為100 μm),進行堆積。將所製造之表面處理銅箔以其粗化處理面與預浸體抵接之方式積層於該堆積之預浸體上,於32 kgf/cm 2、205℃下進行120分鐘之加壓,而製造銅箔積層板。其次,於該銅箔積層板上藉由蝕刻法進行電路形成,製造具備寬3 mm之直線電路之試驗基板。再者,關於例1、2及12,於電路形成前,對銅箔積層板之銅箔側表面進行鍍銅直至銅箔之厚度變為18 μm為止。又,關於例4~6、14及15,於電路形成前,對銅箔積層板之銅箔側表面進行蝕刻直至銅箔之厚度變為18 μm為止。將以此方式獲得之直線電路,依據JIS C 5016-1994之A法(90°剝離)自絕緣基材剝離而測定常態剝離強度(kgf/cm)。按照以下基準評價所獲得之常態剝離強度是否良好。結果如表4所示。 <常態剝離強度評價基準> - 良好:常態剝離強度為0.40 kgf/cm以上 - 不良:常態剝離強度未達0.40 kgf/cm (b-1) Normal peel strength As an insulating substrate, prepare 2 pieces of prepregs (thickness: 100 μm) mainly composed of polyphenylene ether, triallyl isocyanurate and bismaleimide resin, To pile up. The manufactured surface-treated copper foil was laminated on the stacked prepreg so that the roughened surface was in contact with the prepreg, and pressurized at 32 kgf/cm 2 and 205°C for 120 minutes, and Copper-clad laminates are manufactured. Next, a circuit was formed on the copper foil laminate by an etching method, and a test substrate having a 3 mm-wide linear circuit was produced. Furthermore, regarding Examples 1, 2, and 12, before circuit formation, copper plating was performed on the copper foil side surface of the copper foil laminate until the thickness of the copper foil became 18 μm. Moreover, about Examples 4-6, 14, and 15, before circuit formation, the copper foil side surface of the copper foil laminated board was etched until the thickness of copper foil became 18 micrometers. The linear circuit obtained in this manner was peeled from the insulating substrate according to method A (90° peeling) of JIS C 5016-1994, and the normal peel strength (kgf/cm) was measured. Whether or not the obtained normal-state peel strength is good was evaluated according to the following criteria. The results are shown in Table 4. <Normal peel strength evaluation criteria> - Good: Normal peel strength is 0.40 kgf/cm or more - Bad: Normal peel strength is less than 0.40 kgf/cm
(b-2)耐濕剝離強度 除了於測定剝離強度之前,將具備直線電路之試驗基板浸漬於沸水中2小時以外,按照與上述常態剝離強度相同之順序,測定耐濕剝離強度(kgf/cm)。按照以下基準評價所獲得之耐濕剝離強度是否良好。結果如表4所示。 <耐濕剝離強度評價基準> - 良好:耐濕剝離強度為0.40 kgf/cm以上 - 不良:耐濕剝離強度未達0.40 kgf/cm (b-2) Moisture Peel Strength The moisture-resistant peel strength (kgf/cm) was measured in the same procedure as the normal peel strength above, except that the test substrate with the linear circuit was immersed in boiling water for 2 hours before measuring the peel strength. Whether or not the obtained moisture-resistant peel strength is good was evaluated according to the following criteria. The results are shown in Table 4. <Evaluation Criteria for Moisture Peel Strength> - Good: Moisture peel strength of 0.40 kgf/cm or more - Poor: Moisture peel strength less than 0.40 kgf/cm
(c)傳輸特性 準備高頻用基材(Panasonic製造之MEGTRON6N)作為絕緣樹脂基材。將粗化處理銅箔以其粗化處理面與絕緣樹脂基材抵接之方式積層於該絕緣樹脂基材之雙面,使用真空加壓機,於溫度190℃、加壓時間120分鐘之條件下積層,獲得絕緣厚度為136 μm之銅箔積層板。其後,對該銅箔積層板實施蝕刻加工,以特性阻抗成為50 Ω之方式形成微帶線(microstrip line),獲得傳輸損耗測定用基板。對所獲得之傳輸損耗測定用基板,使用網路分析儀(Keysight Technologie製造之N5225B),測定28 GHz時之傳輸損耗(dB/cm)。按照以下基準評價所獲得之傳輸損耗是否良好。結果如表4所示。 <傳輸損耗評價基準> - 良好:傳輸損耗為-0.33 dB/cm以上 - 不良:傳輸損耗未達-0.33 dB/cm (c) Transfer characteristics A base material for high frequency (MEGTRON 6N manufactured by Panasonic) was prepared as an insulating resin base material. The roughened copper foil is laminated on both sides of the insulating resin substrate in such a way that the roughened surface is in contact with the insulating resin substrate. Using a vacuum press, the temperature is 190 ° C and the pressing time is 120 minutes. Laminate down to obtain a copper foil laminate with an insulation thickness of 136 μm. Thereafter, etching was performed on the copper-clad laminate to form a microstrip line so that the characteristic impedance became 50Ω, and a substrate for transmission loss measurement was obtained. The obtained substrate for measurement of transmission loss was measured for transmission loss (dB/cm) at 28 GHz using a network analyzer (N5225B manufactured by Keysight Technologies). Whether or not the obtained transmission loss is good was evaluated according to the following criteria. The results are shown in Table 4. <Evaluation criteria for transmission loss> - Good: The transmission loss is above -0.33 dB/cm - Poor: transmission loss does not reach -0.33 dB/cm
[表4]
圖1係用以說明依據JIS B0601-2013所決定之粗糙度曲線之負載曲線之圖。 圖2係用以說明依據JIS B0601-2013所決定之負載長度率Rmr(c)之圖。 圖3係用以說明依據JIS B0601-2013所決定之切斷程度差Rdc之圖。 圖4係用以說明依據ISO25178所決定之面之負載曲線及負載面積率Smr(c)之圖。 圖5係用以說明依據ISO25178所決定之,分離突出峰部與核心部之負載面積率Smr1、分離突出谷部與核心部之負載面積率Smr2、及核心部程度差Sk之圖。 圖6係用以說明依據ISO25178所決定之突出峰部實體體積Vmp及核心部實體體積Vmc之圖。 圖7係用以說明依據ISO25178所決定之極點高度Sxp之圖。 圖8係用以說明粗化處理銅箔之表面凹凸包含粗化粒子分量及起伏分量之圖。 圖9係粗化粒子之模式剖視圖,且為用以說明微小前端粒子體積之圖。 圖10係表示本發明之粗化處理銅箔之一例之模式圖。 Fig. 1 is a diagram for explaining the load curve of the roughness curve determined according to JIS B0601-2013. Fig. 2 is a diagram for explaining the load length ratio Rmr(c) determined in accordance with JIS B0601-2013. Fig. 3 is a diagram for explaining the cutting degree difference Rdc determined in accordance with JIS B0601-2013. Fig. 4 is a diagram for explaining the load curve and load area ratio Smr(c) of a surface determined in accordance with ISO25178. Fig. 5 is a graph for explaining the load area ratio Smr1 separating the protruding peak and the core, the load area ratio Smr2 separating the protruding valley and the core, and the core degree difference Sk determined according to ISO25178. FIG. 6 is a diagram for explaining the protruding peak portion solid volume Vmp and the core portion solid volume Vmc determined in accordance with ISO25178. FIG. 7 is a diagram illustrating the pole height Sxp determined in accordance with ISO25178. Fig. 8 is a diagram for explaining that the surface unevenness of roughened copper foil includes roughening particle components and undulation components. Fig. 9 is a schematic cross-sectional view of roughened particles, and is a diagram for explaining the volume of tiny front-end particles. Fig. 10 is a schematic view showing an example of the roughened copper foil of the present invention.
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