TW202323594A - Roughened copper foil, copper-clad laminate, and method for manufacturing printed wiring board - Google Patents

Roughened copper foil, copper-clad laminate, and method for manufacturing printed wiring board Download PDF

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TW202323594A
TW202323594A TW111137154A TW111137154A TW202323594A TW 202323594 A TW202323594 A TW 202323594A TW 111137154 A TW111137154 A TW 111137154A TW 111137154 A TW111137154 A TW 111137154A TW 202323594 A TW202323594 A TW 202323594A
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Taiwan
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roughened
copper foil
less
plane
deviation
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TW111137154A
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Chinese (zh)
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加藤翼
立岡歩
楊博鈞
李鎧宇
小畠真一
小野裕士
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日商三井金屬鑛業股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48After-treatment of electroplated surfaces
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal

Abstract

Provided is a roughened copper foil with which it is possible to obtain excellent transmission characteristics when used in a copper-clad laminate or a printed wiring board. This roughened copper foil has a roughened surface on at least one side thereof. The roughened surface has a developed interfacial area ratio Sdr, measured in accordance with ISO25178 and under 200x magnification, no S-filter, and a 5 [mu]m L-filter conditions, of 70.0% or below. In the surface on the opposite side from the roughened surface, the average value of L/S, this being the ratio of the grain boundary length L relative to the occupied area S calculated for each crystal grain in which the deviation angle from the (111) plane is 20 DEG or below in an observation field-of-view when analyzed by electron backscatter diffraction (EBSD) after being heated for one hour at 180 DEG C, is 13.0 [mu]m/[mu]m2 or below.

Description

粗化處理銅箔及銅箔積層板、與印刷配線板之製造方法Roughened copper foil, copper foil laminate, and manufacturing method of printed wiring board

本發明係關於一種粗化處理銅箔及銅箔積層板、與印刷配線板之製造方法。The present invention relates to a method for roughening copper foil, copper foil laminate, and printed wiring board.

於印刷配線板之製造步驟中,銅箔係以與絕緣樹脂基材貼合而成之銅箔積層板之形態被廣泛使用。就該方面而言,期望銅箔與絕緣樹脂基材具有較高之密接力,以防止在印刷配線板製造時發生配線剝離。因此,關於通常之印刷配線板製造用銅箔,對銅箔之貼合面實施粗化處理,形成包含微細之銅粒子之凹凸,藉由衝壓加工將該凹凸嵌入至絕緣樹脂基材之內部,發揮投錨效應,藉此提高密接性。In the manufacturing process of printed wiring boards, copper foil is widely used in the form of copper foil laminates bonded to insulating resin substrates. In this respect, copper foil and an insulating resin base material are desired to have high adhesive force in order to prevent wiring peeling at the time of printed wiring board manufacture. Therefore, with regard to the usual copper foil for printed wiring board manufacture, the bonding surface of the copper foil is roughened to form irregularities containing fine copper particles, and the irregularities are embedded into the interior of the insulating resin base material by press processing. Give play to the anchoring effect, thereby improving the adhesion.

作為經此種粗化處理之銅箔,例如,於專利文獻1(日本專利特開2018-172785號公報)中揭示一種表面處理銅箔,其具有銅箔、及位於銅箔之至少一個表面之粗化處理層,且粗化處理層側表面之算術平均粗糙度Ra為0.08 μm以上0.20 μm以下,粗化處理層側表面之TD(寬度方向)之光澤度為70%以下。根據此種表面處理銅箔,良好地抑制設置在銅箔表面之粗化粒子脫落,且良好地抑制與絕緣基板貼合時產生皺褶及條紋。As such a roughened copper foil, for example, a surface-treated copper foil is disclosed in Patent Document 1 (Japanese Patent Laid-Open No. 2018-172785 ), which has a copper foil and a copper foil located on at least one surface of the copper foil. Roughened layer, and the arithmetic average roughness Ra of the side surface of the roughened layer is not less than 0.08 μm and not more than 0.20 μm, and the TD (width direction) glossiness of the surface of the roughened layer side is not more than 70%. According to such a surface-treated copper foil, the roughening particles provided on the surface of the copper foil are well suppressed from falling off, and the generation of wrinkles and streaks during lamination with an insulating substrate is well suppressed.

然而,隨著近年來攜帶用電子機器等之高功能化,無論是數位還是類比訊號均高頻化以高速處理大容量資料,因此要求適合高頻用途之印刷配線板。對此種高頻用印刷配線板期望減少傳輸損耗,以能夠在不使高頻訊號變差之情況下進行傳輸。印刷配線板具備加工成配線圖案之銅箔及絕緣基材,作為傳輸損耗中之主要損耗,可例舉:由銅箔所引起之導體損耗、及由絕緣基材所引起之介電損耗。However, with the high-performance of portable electronic devices in recent years, both digital and analog signals have become high-frequency to process large-capacity data at high speed, so printed wiring boards suitable for high-frequency applications are required. Such a high-frequency printed wiring board is desired to reduce transmission loss so that high-frequency signals can be transmitted without degrading them. Printed wiring boards have copper foil and insulating base material processed into wiring patterns. As the main loss in transmission loss, examples include conductor loss caused by copper foil and dielectric loss caused by insulating base material.

就該方面而言,提出一種謀求減少傳輸損耗之粗化處理銅箔。例如,於專利文獻2(日本專利特開2015-148011號公報)中,以提供一種訊號之傳輸損耗較小之表面處理銅箔及使用其之積層板等作為目的,揭示藉由表面處理而將銅箔表面之基於JIS B0601-2001之偏度Rsk控制在-0.35以上0.53以下之特定範圍等。 [先前技術文獻] [專利文獻] In this respect, a roughened copper foil for reducing transmission loss is proposed. For example, in Patent Document 2 (Japanese Patent Laid-Open Publication No. 2015-148011), it is disclosed that surface-treated copper foil and a laminate using it are intended to provide a surface-treated copper foil with low signal transmission loss. The skewness Rsk of the copper foil surface based on JIS B0601-2001 is controlled within a specific range of -0.35 to 0.53, etc. [Prior Art Literature] [Patent Document]

[專利文獻1]日本專利特開2018-172785號公報 [專利文獻2]日本專利特開2015-148011號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2018-172785 [Patent Document 2] Japanese Patent Laid-Open No. 2015-148011

如上所述,近年來,要求印刷配線板進一步減少傳輸損耗。然而,藉由如專利文獻1及2所揭示僅改善銅箔中之粗化處理面來滿足此種要求具有界限。As described above, in recent years, printed wiring boards have been required to further reduce transmission loss. However, there is a limit to satisfying such a request by improving only the roughened surface in copper foil as disclosed in Patent Documents 1 and 2.

本發明者等人此次獲得如下見解,即,在粗化處理銅箔中,將粗化處理面中之界面之展開面積比Sdr控制在特定範圍,且控制與粗化處理面相反一側之面中存在的特定方位之晶粒之晶界,藉此能夠在使用其所製造之銅箔積層板或印刷配線板中,實現優異之傳輸特性。The inventors of the present invention obtained the knowledge that, in the roughened copper foil, the developed area ratio Sdr of the interface on the roughened surface is controlled within a specific range, and the area ratio Sdr on the side opposite to the roughened surface is controlled. The grain boundary of crystal grains with a specific orientation in the plane can realize excellent transmission characteristics in the copper foil laminate or printed wiring board manufactured by using it.

因此,本發明之目的在於提供一種粗化處理銅箔,其於用於銅箔積層板或印刷配線板之情形時,能夠實現優異之傳輸特性。Therefore, an object of the present invention is to provide a roughened copper foil that can realize excellent transmission characteristics when used in a copper foil laminate or a printed wiring board.

根據本發明,提供以下之態樣。 [態樣1] 一種粗化處理銅箔,其係在至少一側具有粗化處理面者, 上述粗化處理面依據ISO25178,於倍率200倍、無S濾波器、及L濾波器5 μm之條件下所測得之界面之展開面積比Sdr為70.0%以下, 與上述粗化處理面相反一側之面於以180℃加熱1小時後藉由電子束背向散射繞射法(EBSD)進行解析之情形時,於觀察視野中,針對自(111)面偏移之角度為20度以下之各晶粒算出的晶界長度L相對於佔有面積S之比L/S之平均值為13.0 μm/μm 2以下。 [態樣2] 如態樣1所記載之粗化處理銅箔,其中與上述粗化處理面相反一側之面於上述觀察視野中,自上述(111)面偏移之角度為20度以下之晶粒之合計佔有面積A 1相對於自(100)面偏移之角度為20度以下之晶粒之合計佔有面積A 2、自(010)面偏移之角度為20度以下之晶粒之合計佔有面積A 3、及自(001)面偏移之角度為20度以下之晶粒之合計佔有面積A 4之和(A 2+A 3+A 4)的比A 1/(A 2+A 3+A 4)為0.10以上0.60以下。 [態樣3] 如態樣1或2所記載之粗化處理銅箔,其中上述L/S之平均值為2.0 μm/μm 2以上11.0 μm/μm 2以下。 [態樣4] 如態樣1至3中任一項所記載之粗化處理銅箔,其中上述粗化處理面依據ISO25178,於倍率200倍、無S濾波器、及無L濾波器之條件下所測得之核心部之階層差Sk為1.70 μm以下。 [態樣5] 如態樣1至4中任一項所記載之粗化處理銅箔,其中上述粗化處理銅箔為電解銅箔,且上述粗化處理面存在於電解銅箔之電極面側。 [態樣6] 如態樣1至5中任一項所記載之粗化處理銅箔,其中上述粗化處理面具備複數個粗化粒子,且上述粗化粒子包含金屬。 [態樣7] 一種銅箔積層板,其係具備樹脂層、及設置於該樹脂層之至少一個表面之粗化處理銅箔者, 上述粗化處理銅箔在至少一側具有粗化處理面,上述粗化處理面與上述樹脂層相接, 上述粗化處理面依據ISO25178,於倍率200倍、無S濾波器、及L濾波器5 μm之條件下所測得之界面之展開面積比Sdr為70.0%以下,且 上述粗化處理銅箔之與上述粗化處理面相反一側之面於藉由電子束背向散射繞射法(EBSD)進行解析之情形時,於觀察視野中,針對自(111)面偏移之角度為20度以下之各晶粒算出的晶界長度L相對於佔有面積S之比L/S之平均值為13.0 μm/μm 2以下。 [態樣8] 如態樣7所記載之銅箔積層板,其中上述粗化處理銅箔之與上述粗化處理面相反一側之面於上述觀察視野中,自上述(111)面偏移之角度為20度以下之晶粒之合計佔有面積A 1相對於自(100)面偏移之角度為20度以下之晶粒之合計佔有面積A 2、自(010)面偏移之角度為20度以下之晶粒之合計佔有面積A 3、及自(001)面偏移之角度為20度以下之晶粒之合計佔有面積A 4之和(A 2+A 3+A 4)的比A 1/(A 2+A 3+A 4)為0.10以上0.60以下。 [態樣9] 一種印刷配線板之製造方法,其包括如下步驟: 準備粗化處理銅箔,上述粗化處理銅箔係在至少一側具有粗化處理面者,上述粗化處理面依據ISO25178,於倍率200倍、無S濾波器、及L濾波器5 μm之條件下所測得之界面之展開面積比Sdr為70.0%以下; 於樹脂層之至少一個表面將上述粗化處理銅箔以上述粗化處理面與上述樹脂層相接之方式積層,製作銅箔積層板; 對上述銅箔積層板之上述粗化處理銅箔進行加工,形成電路;及 對上述電路進行利用蝕刻之粗化處理;且 進行上述利用蝕刻之粗化處理前之上述電路之表面於藉由電子束背向散射繞射法(EBSD)進行解析之情形時,於觀察視野中,針對自(111)面偏移之角度為20度以下之各晶粒算出的晶界長度L相對於佔有面積S之比L/S之平均值為13.0 μm/μm 2以下。 [態樣10] 如態樣9所記載之印刷配線板之製造方法,其中進行上述利用蝕刻之粗化處理前之上述電路之表面於上述觀察視野中,自上述(111)面偏移之角度為20度以下之晶粒之合計佔有面積A 1相對於自(100)面偏移之角度為20度以下之晶粒之合計佔有面積A 2、自(010)面偏移之角度為20度以下之晶粒之合計佔有面積A 3、及自(001)面偏移之角度為20度以下之晶粒之合計佔有面積A 4之和(A 2+A 3+A 4)的比A 1/(A 2+A 3+A 4)為0.10以上0.60以下。 According to the present invention, the following aspects are provided. [Aspect 1] A roughened copper foil having a roughened surface on at least one side, the above-mentioned roughened surface conforming to ISO25178, with a magnification of 200 times, without an S filter, and without an L filter of 5 μm The developed area ratio Sdr of the interface measured under the conditions is 70.0% or less, and the surface opposite to the above-mentioned roughened surface is measured by electron beam backscatter diffraction (EBSD) after heating at 180°C for 1 hour In the case of analysis, in the observation field, the average value of the ratio L/S of the grain boundary length L to the occupied area S calculated for each grain whose angle of deviation from the (111) plane is 20 degrees or less is 13.0 μm /μm 2 or less. [Aspect 2] The roughened copper foil according to Aspect 1, wherein the angle of deviation from the (111) plane is 20 degrees or less on the surface opposite to the roughened surface in the observation field of view. The total occupied area A 1 of the crystal grains is relative to the total occupied area A 2 of the crystal grains whose angle of deviation from the (100) plane is 20 degrees or less, and the grains whose angle of deviation from the (010) plane is 20 degrees or less Ratio A 1 / ( A 2 + A 3 +A 4 ) is not less than 0.10 and not more than 0.60. [Aspect 3] The roughened copper foil according to Aspect 1 or 2, wherein the average value of the L/S is 2.0 μm/μm 2 or more and 11.0 μm/μm 2 or less. [Aspect 4] The roughened copper foil described in any one of Aspects 1 to 3, wherein the above-mentioned roughened surface is based on ISO25178, under the conditions of 200 times the magnification, no S filter, and no L filter The level difference Sk of the core part measured below is 1.70 μm or less. [Aspect 5] The roughened copper foil according to any one of Aspects 1 to 4, wherein the roughened copper foil is an electrolytic copper foil, and the roughened surface exists on an electrode surface of the electrolytic copper foil side. [Aspect 6] The roughened copper foil according to any one of aspects 1 to 5, wherein the roughened surface has a plurality of roughened particles, and the roughened particles contain metal. [Aspect 7] A copper foil laminate comprising a resin layer and a roughened copper foil provided on at least one surface of the resin layer, wherein the roughened copper foil has a roughened surface on at least one side , the above-mentioned roughened surface is in contact with the above-mentioned resin layer, and the above-mentioned roughened surface is based on ISO25178, and the developed area ratio Sdr of the interface measured under the conditions of 200 times magnification, no S filter, and L filter 5 μm 70.0% or less, and when the surface of the above-mentioned roughened copper foil opposite to the above-mentioned roughened surface is analyzed by electron beam backscatter diffraction (EBSD), in the observation field of view, for The average value of the ratio L/S of the grain boundary length L to the occupied area S calculated for each crystal grain whose angle of deviation from the (111) plane is 20 degrees or less is 13.0 μm/μm 2 or less. [Aspect 8] The copper foil laminate according to Aspect 7, wherein the surface of the roughened copper foil opposite to the roughened surface is offset from the (111) surface in the observation field of view The total occupied area A 1 of crystal grains whose angle is less than 20 degrees is relative to the total occupied area A 2 of crystal grains whose angle of deviation from (100) plane is less than 20 degrees, and the angle of deviation from (010) plane is Ratio A 1 of the sum of the total occupied area A 3 of crystal grains below 20 degrees and the total occupied area A 4 of crystal grains whose angle of deviation from the (001) plane is below 20 degrees (A 2 +A 3 +A 4 ) /(A 2 +A 3 +A 4 ) is not less than 0.10 and not more than 0.60. [Aspect 9] A method of manufacturing a printed wiring board, comprising the steps of: preparing a roughened copper foil, wherein the roughened copper foil has a roughened surface on at least one side, and the roughened surface is in accordance with ISO25178 , under the conditions of 200 times magnification, no S filter, and L filter 5 μm, the developed area ratio Sdr of the interface measured is less than 70.0%; the above-mentioned roughened copper foil is applied to at least one surface of the resin layer Laminating the roughened surface in contact with the resin layer to produce a copper foil laminate; processing the roughened copper foil of the copper foil laminate to form a circuit; and roughening the circuit by etching processing; and when the surface of the above-mentioned circuit before the above-mentioned roughening treatment by etching is analyzed by the electron beam backscatter diffraction method (EBSD), in the observation field of view, for the deviation from the (111) plane The average value of the ratio L/S of the grain boundary length L to the occupied area S calculated for each crystal grain having an angle of 20 degrees or less is 13.0 μm/μm 2 or less. [Aspect 10] The method of manufacturing a printed wiring board according to Aspect 9, wherein the surface of the circuit before the roughening treatment by etching is deviated from the (111) plane in the observation field of view It is the total occupied area A 1 of crystal grains below 20 degrees relative to the total occupied area A 2 of crystal grains whose angle of deviation from (100) plane is less than 20 degrees, and the angle of deviation from (010) plane is 20 degrees Ratio A 1 / ( _ A 2 +A 3 +A 4 ) is not less than 0.10 and not more than 0.60.

定義以下表示用於特定本發明之用語或參數之定義。 Definitions The definitions of terms or parameters used to specify the present invention are shown below.

於本說明書中,「界面之展開面積比Sdr」或「Sdr」係用百分率表示依據ISO25178所測得之定義區域之展開面積(表面積)相對於定義區域之面積增大了多少之參數。該值越小,表示為越接近平坦之表面形狀,完全平坦之表面之Sdr為0%。另一方面,該值越大,表示為凹凸越多之表面形狀。In this specification, the "expanded area ratio Sdr of the interface" or "Sdr" is a parameter expressing the increase of the expanded area (surface area) of the defined area measured in accordance with ISO25178 relative to the area of the defined area in percentage. The smaller the value, the closer to a flat surface shape, and the Sdr of a completely flat surface is 0%. On the other hand, a larger value indicates a surface shape with more unevenness.

於本說明書中,「面之負荷曲線」係指表示依據ISO25178所確定之負荷面積率為0%至100%之高度之曲線。如圖1所示,負荷面積率係表示某一高度c以上之區域之面積之參數。高度c處之負荷面積率相當於圖1中之Smr(c)。如圖2所示,將負荷面積率為0%開始沿著負荷曲線使負荷面積率之差為40%所拉出之負荷曲線之割線自負荷面積率0%移動,將割線之傾斜最為緩和之位置稱為面之負荷曲線之中央部分。對於該中央部分,將使縱軸方向之偏差之平方和成為最小之直線稱為等效直線。將等效直線之負荷面積率0%至100%之高度之範圍中所含之部分稱為核心部。將較核心部高之部分稱為突出峰部,較核心部低之部分稱為突出谷部。In this specification, the "surface load curve" refers to a curve showing the height of the load area ratio determined in accordance with ISO25178 from 0% to 100%. As shown in Fig. 1, the load area ratio is a parameter indicating the area of the area above a certain height c. The load area ratio at height c is equivalent to Smr(c) in Figure 1. As shown in Figure 2, the secant line of the load curve drawn from the load area ratio of 0% along the load curve so that the difference of the load area ratio is 40% moves from the load area ratio of 0%, and the slope of the secant line is the most gentle. The location is called the central portion of the load curve for the surface. The straight line that minimizes the sum of the squares of the deviations in the vertical axis direction in the central portion is called an equivalent straight line. The part included in the height range from 0% to 100% of the load area ratio of the equivalent straight line is called the core part. The part higher than the core part is called a protruding peak part, and the part lower than the core part is called a protruding valley part.

於本說明書中,「核心部之階層差Sk」或「Sk」係依據ISO25178所測得之自核心部之最大高度減去最小高度所得之值,如圖2所示,係藉由等效直線之負荷面積率0%與100%之高度差所算出之參數。In this specification, "the step difference Sk of the core" or "Sk" is the value obtained by subtracting the minimum height from the maximum height of the core measured according to ISO25178, as shown in Figure 2, by means of an equivalent straight line The parameters calculated from the height difference between 0% and 100% of the load area ratio.

Sdr及Sk可藉由利用市售之雷射顯微鏡測定粗化處理面中之特定之測定面積之表面輪廓而算出。於本說明書中,Sdr係於倍率200倍、無S濾波器、及L濾波器5 μm之條件下所測得者。另一方面,Sk係於倍率200倍、無S濾波器、及無L濾波器之條件下所測得著。再者,於在利用雷射顯微鏡之測定中使用物鏡及光學變焦雙方之情形時,上述倍率相當於物鏡之倍率乘以光學變焦之倍率所得之值。例如,於物鏡倍率為100倍、光學變焦倍率為2倍之情形時,倍率為200倍(=100×2)。此外,對於利用雷射顯微鏡之表面輪廓之較佳之測定條件及解析條件,設為下述實施例所示者。Sdr and Sk can be calculated by measuring the surface profile of a specific measurement area in the roughened surface with a commercially available laser microscope. In this specification, Sdr is measured under the conditions of 200 times magnification, no S filter, and 5 μm L filter. On the other hand, Sk was measured under the conditions of 200 times magnification, no S filter, and no L filter. In addition, when both the objective lens and optical zoom are used in the measurement with a laser microscope, the said magnification corresponds to the value obtained by multiplying the magnification of an objective lens by the magnification of an optical zoom. For example, when the objective lens magnification is 100 times and the optical zoom magnification is 2 times, the magnification is 200 times (=100×2). In addition, preferable measurement conditions and analysis conditions of the surface profile using a laser microscope were set as those shown in the following Examples.

於本說明書中,電解銅箔之「電極面」係指電解銅箔製造時與陰極相接之側之面。In this specification, the "electrode surface" of the electrodeposited copper foil refers to the surface on the side that is in contact with the cathode when the electrodeposited copper foil is produced.

於本說明書中,電解銅箔之「析出面」係指電解銅箔製造時析出電解銅之側之面,即,未與陰極相接之側之面。In this specification, the "precipitation surface" of the electrodeposited copper foil refers to the surface on which the electrodeposited copper is deposited during the manufacture of the electrodeposited copper foil, that is, the surface on the side not in contact with the cathode.

粗化處理銅箔本發明之銅箔係粗化處理銅箔。該粗化處理銅箔在至少一側具有粗化處理面。該粗化處理面之界面之展開面積比Sdr為70.0%以下。又,粗化處理銅箔之與粗化處理面相反一側之面於以180℃加熱1小時後藉由電子束背向散射繞射法(EBSD)進行解析之情形時,於觀察視野中,針對自(111)面偏移之角度為20度以下之各晶粒算出的晶界長度L相對於佔有面積S之比L/S之平均值為13.0 μm/μm 2以下。如此,於粗化處理銅箔中,將粗化處理面中之界面之展開面積比Sdr控制在特定範圍,且對與粗化處理面相反一側之面中存在的特定方位之晶粒之晶界進行控制,藉此能夠於使用其所製造之銅箔積層板或印刷配線板中,實現優異之傳輸特性。 Roughening treatment copper foil The copper foil of this invention is a roughening treatment copper foil. This roughened copper foil has a roughened surface on at least one side. The developed area ratio Sdr of the interface of the roughened surface is 70.0% or less. In addition, when the surface of the roughened copper foil opposite to the roughened surface is analyzed by electron beam backscattering diffraction (EBSD) after heating at 180° C. for 1 hour, in the observation field, The average value of the ratio L/S of the grain boundary length L to the occupied area S calculated for each crystal grain whose angle of deviation from the (111) plane is 20 degrees or less is 13.0 μm/μm 2 or less. In this way, in the roughened copper foil, the expansion area ratio Sdr of the interface on the roughened surface is controlled within a specific range, and the crystal grains of a specific orientation existing on the surface opposite to the roughened surface are controlled. Controlling the boundary, it is possible to achieve excellent transmission characteristics in copper foil laminates or printed wiring boards manufactured using it.

關於藉由本發明之構成而能夠實現優異之傳輸特性之機制,未必明確,但認為如下。首先,若銅箔之粗化處理面中之界面之展開面積比Sdr為70.0%以下,則該粗化處理面成為便於實現優異之傳輸特性之凹凸形狀。此處,如圖3所示,粗化處理面之凹凸包含「粗化粒子分量」、及較粗化粒子分量長週期之「起伏分量」。該粗化粒子分量及起伏分量可藉由使用雷射顯微鏡之S濾波器及L濾波器來加以區分。具體而言,可藉由於無S濾波器、及L濾波器5 μm之條件下測定粗化處理銅箔之粗化處理面,而獲得起伏分量之影響被去除之粗化粒子分量之參數。又,藉由以倍率200倍之高倍率測定粗化處理面,可對影響傳輸特性之粗化處理面之細微之凹凸進行正確評價。因此,可以說本發明中之界面之展開面積比Sdr更加正確地反映銅箔之粗化處理面中之粗化粒子之形狀。The mechanism by which excellent transmission characteristics can be realized by the configuration of the present invention is not necessarily clear, but it is considered as follows. First, if the developed area ratio Sdr of the interface in the roughened surface of the copper foil is 70.0% or less, the roughened surface will have a concavo-convex shape for realizing excellent transmission characteristics. Here, as shown in FIG. 3 , the unevenness of the roughened surface includes a "roughened particle component" and a "fluctuation component" with a longer period than the roughened particle component. The roughened particle component and the fluctuation component can be distinguished by using an S filter and an L filter of a laser microscope. Specifically, by measuring the roughened surface of the roughened copper foil under the condition of no S filter and L filter 5 μm, the parameter of the roughened particle component whose influence of the fluctuation component is removed can be obtained. In addition, by measuring the roughened surface at a high magnification of 200 times, it is possible to accurately evaluate the fine unevenness of the roughened surface that affects the transmission characteristics. Therefore, it can be said that the developed area of the interface in the present invention more accurately reflects the shape of the roughened particles on the roughened surface of the copper foil than Sdr.

另一方面,如上所述,要求印刷配線板進一步減少傳輸損耗,但僅藉由改善銅箔中之粗化處理面來滿足此種要求具有界限。就該方面而言,本發明之粗化處理銅箔不僅粗化處理面藉由上述特定參數進行控制,與粗化處理面相反一側之面亦藉由上述特定參數進行控制。粗化處理銅箔中之與粗化處理面相反一側之面與傳輸特性之關係可如下所示進行說明。於印刷配線板之製造步驟之一例中,對在粗化處理銅箔之粗化處理面貼合有絕緣樹脂基材而成之銅箔積層板進行光阻層之形成或蝕刻等加工而形成電路後,以覆蓋電路之方式進一步積層樹脂。此時,在積層樹脂之前,進行用於提高電路與其周圍之樹脂之可靠性(密接性或耐熱性等)之處理。作為此種用於提高可靠性之處理,代表性的有對電路表面部分地進行溶解(蝕刻)而進行粗化之處理。如此,由於利用蝕刻之粗化處理係在形成電路後進行,故而受到該處理之影響者為電路中之未與樹脂基材相接之面,即,粗化處理銅箔中之與粗化處理面相反一側之面。就該方面而言,與銅箔製造時所賦予之粗化粒子相同,利用蝕刻之粗化處理之粗化越大,傳輸特性越差。因此,為了實現更優異之傳輸特性,重要的是,不僅控制粗化處理銅箔之粗化處理面(與樹脂基材密接之側之面)之表面性狀,亦控制其相反側之面之表面性狀。On the other hand, as described above, the printed wiring board is required to further reduce the transmission loss, but there is a limit to satisfying this requirement only by improving the roughened surface in the copper foil. In this respect, in the roughened copper foil of the present invention, not only the roughened surface is controlled by the above-mentioned specific parameters, but also the surface on the opposite side to the roughened surface is also controlled by the above-mentioned specific parameters. The relationship between the surface of the roughened copper foil opposite to the roughened surface and the transmission characteristics can be described as follows. In one example of the manufacturing process of a printed wiring board, a copper foil laminate formed by bonding an insulating resin base material to the roughened surface of the roughened copper foil is formed by forming a photoresist layer or etching, etc., to form a circuit After that, resin is further laminated to cover the circuit. At this time, before laminating the resin, treatment for improving the reliability (adhesiveness, heat resistance, etc.) of the circuit and the surrounding resin is performed. As such a treatment for improving reliability, there is typically a treatment of partially dissolving (etching) the surface of the circuit to roughen it. In this way, since the roughening treatment by etching is performed after the circuit is formed, the affected part of the treatment is the surface of the circuit that is not in contact with the resin base material, that is, the surface of the roughened copper foil and the roughened surface. The face on the opposite side. In this respect, similarly to the roughened particles given at the time of copper foil production, the larger the roughening by the etching roughening process, the worse the transmission characteristics. Therefore, in order to achieve more excellent transmission characteristics, it is important not only to control the surface properties of the roughened surface (the side that is in close contact with the resin substrate) of the roughened copper foil, but also to control the surface on the opposite side. traits.

一般而言,包含多晶之金屬組織之溶解係沿著晶粒彼此相接之部分(晶界)進行。因此,存在於電路表面之晶粒之晶界越少,被強烈蝕刻之部位越少,與晶界較多之情形相比,傳輸特性相對良好。又,與蝕刻液相接之原子之數量根據存在於進行蝕刻之面之結晶之方位而不同,認為與蝕刻液同時相接之原子越多,溶解越有效率。因此,可以說作為最密填充結構之自(111)面偏移之角度(傾斜角)較小之晶粒之溶解特快。如此,晶粒之方位及晶界會對蝕刻之進行造成影響,結果,亦會對傳輸特性造成影響。In general, dissolution of a metal structure including polycrystals proceeds along the portion (grain boundary) where crystal grains meet each other. Therefore, the fewer the grain boundaries of the crystal grains existing on the surface of the circuit, the fewer the parts that are strongly etched, and the transfer characteristics are relatively good compared with the case where there are more grain boundaries. Also, the number of atoms in contact with the etchant varies depending on the orientation of crystals present on the surface to be etched, and it is considered that the more atoms in contact with the etchant at the same time, the more efficient the dissolution. Therefore, it can be said that crystal grains having a smaller angle of deviation (tilt angle) from the (111) plane as a densely packed structure dissolve extremely quickly. In this way, the orientation and grain boundaries of crystal grains affect the progress of etching, and as a result, also affect the transmission characteristics.

就該方面而言,本發明之粗化處理銅箔著眼於在與粗化處理面相反一側之面中對蝕刻之影響較大之自(111)面偏移之角度為20度以下之晶粒,將各晶粒中之晶界長度L相對於佔有面積S之比L/S之平均值控制在13.0 μm/μm 2以下。即,由於滿足上述參數之粗化處理銅箔的溶解特快之自(111)面偏移之角度較小之粒子之晶界較少,故而被局部快速蝕刻之部位變少。其結果,利用蝕刻之粗化處理後之電路表面形狀變得平滑,能夠提高傳輸特性。 In this regard, the roughened copper foil of the present invention focuses on crystals having an angle of deviation from the (111) plane of 20 degrees or less on the surface opposite to the roughened surface, which has a large influence on etching. grains, the average value of the ratio L/S of the grain boundary length L to the occupied area S in each grain is controlled below 13.0 μm/μm 2 . That is, since the roughened copper foil satisfying the above-mentioned parameters dissolves extremely fast, there are fewer grain boundaries of particles with smaller angles of deviation from the (111) plane, so fewer parts are locally etched quickly. As a result, the surface shape of the circuit after the roughening treatment by etching becomes smooth, and the transmission characteristics can be improved.

粗化處理銅箔之粗化處理面之界面之展開面積比Sdr為70.0%以下,較佳為5.0%以上60.0%以下,更佳為10.0%以上50.0%以下,進而較佳為20.0%以上45.0%以下。若為上述範圍內之Sdr,則確保與樹脂基材之較高之密接性,且粗化處理面成為便於實現優異傳輸特性之富於凹凸之形狀。The developed area ratio Sdr of the roughened surface of the roughened copper foil is not more than 70.0%, preferably not less than 5.0% and not more than 60.0%, more preferably not less than 10.0% and not more than 50.0%, further preferably not less than 20.0% and not more than 45.0% %the following. If the Sdr is within the above range, high adhesion to the resin base material will be ensured, and the roughened surface will have a shape rich in concavities and convexities for realizing excellent transmission characteristics.

粗化處理銅箔之粗化處理面之核心部之階層差Sk較佳為1.70 μm以下,更佳為0.10 μm以上1.50 μm以下,進而較佳為0.50 μm以上1.40 μm以下,尤佳為0.90 μm以上1.20 μm以下。如上所述,本發明中Sk(與Sdr不同)係藉由於無L濾波器之條件下測定銅箔表面所獲得之參數,藉此更加正確地反映銅箔之表面形狀整體。就該方面而言,若為上述範圍內之Sk,則能夠有效地發揮投錨效應,確保與樹脂基材之較高之密接性,且提高電路形成性。The step difference Sk of the core portion of the roughened surface of the roughened copper foil is preferably 1.70 μm or less, more preferably 0.10 μm or more and 1.50 μm or less, further preferably 0.50 μm or more and 1.40 μm or less, especially preferably 0.90 μm Above 1.20 μm. As mentioned above, in the present invention, Sk (different from Sdr) is a parameter obtained by measuring the surface of the copper foil under the condition of no L filter, so as to more accurately reflect the overall surface shape of the copper foil. In this respect, if it is Sk within the above-mentioned range, the anchoring effect can be exhibited effectively, high adhesiveness with a resin base material can be ensured, and circuit formability can be improved.

粗化處理銅箔之與粗化處理面相反一側之面之L/S之平均值為13.0 μm/μm 2以下,較佳為2.0 μm/μm 2以上11.0 μm/μm 2以下,更佳為3.0 μm/μm 2以上10.0 μm/μm 2以下,進而較佳為5.0 μm/μm 2以上9.0 μm/μm 2以下。若為上述範圍內之L/S之平均值,則能夠使利用蝕刻之粗化適度進行,且抑制被局部快速蝕刻之部位,因此當在形成電路後進行利用蝕刻之粗化處理時,能夠謀求作為本來目的之可靠性之提高,且電路表面形狀變得平滑,減少傳輸損耗。 The average value of L/S of the roughened copper foil on the side opposite to the roughened surface is 13.0 μm/μm 2 or less, preferably 2.0 μm/μm 2 or more and 11.0 μm/μm 2 or less, more preferably 3.0 μm/μm 2 to 10.0 μm/μm 2 , more preferably 5.0 μm/μm 2 to 9.0 μm/μm 2 . If it is the average value of L/S within the above range, the roughening by etching can be made moderately, and the part that is locally rapidly etched can be suppressed. Therefore, when the roughening treatment by etching is performed after the circuit is formed, it can be achieved. The improvement of the reliability which is the original purpose, and the surface shape of the circuit becomes smooth, and the transmission loss is reduced.

粗化處理銅箔之與粗化處理面相反一側之面於藉由上述EBSD進行解析之情形時,於觀察視野中,自(111)面偏移之角度為20度以下之晶粒之合計佔有面積A 1相對於自(100)面偏移之角度為20度以下之晶粒之合計佔有面積A 2、自(010)面偏移之角度為20度以下之晶粒之合計佔有面積A 3、及自(001)面偏移之角度為20度以下之晶粒之合計佔有面積A 4之和(A 2+A 3+A 4)的比A 1/(A 2+A 3+A 4)較佳為0.10以上0.60以下,更佳為0.15以上0.55以下,進而較佳為0.20以上0.50以下。若為上述範圍內之A 1/(A 2+A 3+A 4),則蝕刻時溶解特快之自(111)面偏移之角度較小之晶粒較少,但適度存在。其結果,當在形成電路後進行利用蝕刻之粗化處理時,能夠謀求作為本來目的之可靠性之提高,且電路表面形狀變得平滑,進一步減少傳輸損耗。 The total number of crystal grains whose angle of deviation from the (111) plane is 20 degrees or less in the field of view when the surface of the roughened copper foil is analyzed by the above-mentioned EBSD Occupied area A 1 is relative to the total occupied area A 2 of crystal grains whose angle of deviation from the (100) plane is 20 degrees or less, and the total occupied area A of crystal grains whose angle of deviation from the (010) plane is 20 degrees or less 3. The ratio A 1 /(A 2 +A 3 +A 4 ) of the sum (A 2 +A 3 +A 4 ) of the total occupied area A 4 of grains whose angle of deviation from the (001) plane is less than 20 degrees is better It is not less than 0.10 and not more than 0.60, more preferably not less than 0.15 and not more than 0.55, still more preferably not less than 0.20 and not more than 0.50. If A 1 /(A 2 +A 3 +A 4 ) is within the above range, there are fewer crystal grains with a smaller angle of deviation from the (111) plane that dissolve extremely rapidly during etching, but they exist moderately. As a result, when the roughening treatment by etching is performed after the circuit is formed, the intended reliability can be improved, the circuit surface shape can be smoothed, and the transmission loss can be further reduced.

粗化處理銅箔之與粗化處理面相反一側之面中之L/S之平均值、及A 1/(A 2+A 3+A 4)可藉由對粗化處理銅箔以180℃加熱1小時後利用電子束背向散射繞射法(EBSD)進行解析而特定。利用電子束背向散射繞射法(EBSD)之解析可按照下述實施例所示之程序良好地進行。再者,對粗化處理銅箔以180℃加熱1小時後進行利用EBSD之解析之理由如下。即,如上所述,藉由上述參數對粗化處理銅箔中之與粗化處理面相反一側之面進行控制之目的在於當在形成電路後進行利用蝕刻之粗化處理時,使電路表面成為傳輸特性優異之平滑之形狀。並且,電路形成通常係在粗化處理銅箔與樹脂基材藉由熱壓而接合之態樣(即,銅箔積層板之態樣)下進行。另一方面,構成銅箔之結晶之狀態可能根據熱負荷而變化。因此,藉由於在上述條件下加熱粗化處理銅箔後進行利用EBSD之解析,能夠在與即將進行利用蝕刻之粗化處理之前相近之狀態下評價晶粒。 The average value of L/S and A 1 /(A 2 +A 3 +A 4 ) of the roughened copper foil on the surface opposite to the roughened surface can be obtained by heating the roughened copper foil at 180°C One hour later, it was analyzed and identified by electron beam backscattering diffraction (EBSD). Analysis by electron beam backscatter diffraction (EBSD) can be performed well according to the procedure shown in the following examples. In addition, the reason for performing the analysis by EBSD after heating roughening process copper foil at 180 degreeC for 1 hour is as follows. That is, as described above, the purpose of controlling the surface of the roughened copper foil on the opposite side to the roughened surface by the above parameters is to make the surface of the circuit rougher when the roughening treatment by etching is performed after the circuit is formed. It becomes a smooth shape with excellent transmission characteristics. In addition, circuit formation is generally performed in a state in which the roughened copper foil and the resin base material are bonded by heat and pressure (that is, in the state of a copper foil laminate). On the other hand, the state of the crystals constituting the copper foil may change according to the heat load. Therefore, by performing the analysis by EBSD after heating the roughening process copper foil under the said conditions, crystal grains can be evaluated in the state similar to immediately before performing the roughening process by etching.

粗化處理銅箔之厚度並無特別限定,較佳為0.1 μm以上210 μm以下,更佳為0.3 μm以上105 μm以下,進而較佳為7 μm以上70 μm以下,尤佳為15 μm以上20 μm以下。再者,本發明之粗化處理銅箔並不限於對通常之銅箔之表面進行了粗化處理者,亦可為對附載體之銅箔之銅箔表面進行了粗化處理或微粗化處理者。The thickness of the roughened copper foil is not particularly limited, preferably 0.1 μm to 210 μm, more preferably 0.3 μm to 105 μm, further preferably 7 μm to 70 μm, especially preferably 15 μm to 20 μm or less. Furthermore, the roughened copper foil of the present invention is not limited to those roughened on the surface of ordinary copper foils, and may also be roughened or micro-roughened on the surface of copper foil with a carrier. processor.

本發明之粗化處理銅箔可藉由如下方式良好地製造,即,對平滑之銅箔表面(例如,電解銅箔之電極面),於所需之低粗化條件下進行粗化處理,形成微細之粗化粒子。因此,根據本發明之較佳之態樣,粗化處理銅箔為電解銅箔,粗化處理面存在於電解銅箔之電極面側。再者,粗化處理銅箔可在兩側具有粗化處理面,亦可僅在一側具有粗化處理面。粗化處理面典型而言具備複數個粗化粒子,該等複數個粗化粒子較佳為分別包含金屬,更佳為包含銅。構成粗化粒子之金屬亦可包含由原料成分或形成步驟等所引起之不可避免之雜質。於粗化粒子包含銅之情形時,銅可由金屬銅構成,亦可由銅合金構成。The roughened copper foil of the present invention can be well produced by performing roughening treatment on a smooth copper foil surface (for example, an electrode surface of an electrolytic copper foil) under required low roughening conditions, Form fine coarse particles. Therefore, according to a preferred aspect of the present invention, the roughened copper foil is an electrolytic copper foil, and the roughened surface exists on the electrode surface side of the electrolytic copper foil. Furthermore, the roughened copper foil may have a roughened surface on both sides, or may have a roughened surface only on one side. Typically, the roughened surface has a plurality of roughened particles, and the plurality of roughened particles preferably contain metal, more preferably copper. The metal constituting the roughened particles may contain unavoidable impurities caused by raw material components, forming steps, and the like. When the roughened particles contain copper, the copper may be composed of metallic copper or a copper alloy.

電解銅箔較佳為藉由使用去除了動物膠等高分子化合物之銅電解液,進行電解析出而製造。即,動物膠等高分子化合物容易進入至銅箔,容易抑制由熱所引起之結晶生長。因此,藉由使用去除了高分子化合物之銅電解液,容易滿足對本發明之粗化處理銅箔所要求之參數。例如,藉由對銅電解液進行活性碳處理,能夠去除銅電解液中之高分子化合物。Electrodeposited copper foil is preferably produced by electrolytic deposition using a copper electrolytic solution from which polymer compounds such as animal glue have been removed. That is, high molecular compounds such as animal glue are easy to penetrate into the copper foil, and crystal growth caused by heat is easy to be suppressed. Therefore, by using the copper electrolytic solution from which the polymer compound has been removed, it is easy to satisfy the parameters required for the roughened copper foil of the present invention. For example, the polymer compound in the copper electrolyte can be removed by treating the copper electrolyte with activated carbon.

當上述電解析出時,較佳為將藉由下述式: R N=C×U/m (式中,R N為非金屬雜質供給比(-),C為非金屬雜質濃度(g/m 3),U為供液流量(m 3/s),m為銅析出速度(g/s)) 所定義之非金屬雜質供給比R N設為0.020以上0.100以下,更佳為設為0.030以上0.100以下。此處,非金屬雜質濃度C係藉由銅電解液中之總有機碳量(TOC)及氯離子(Cl -)濃度之和所算出之值,銅析出速度m係藉由下述式: m=I×M/(n×F) (式中,I為電流值(A),M為銅之莫耳質量(g/mol),n為銅之價數,F為法拉第常數(C/mol)) 所算出之值。若非金屬雜質供給比R N處於上述範圍內,則能夠於相對於銅箔之析出為適當之速度範圍內供給氯或低分子有機物等。其結果,能夠將電解銅箔之析出面之粗糙度控制在適當之範圍,容易滿足對本發明之粗化處理銅箔所要求之參數。 When the above-mentioned electrolysis is separated out, preferably by the following formula: RN =C×U/m (wherein, RN is the non-metallic impurity supply ratio (-), C is the non-metallic impurity concentration (g/ m 3 ), U is the liquid supply flow rate (m 3 /s), m is the copper precipitation rate (g/s)) The non-metallic impurity supply ratio R N defined is set to 0.020 or more and 0.100 or less, and is more preferably set to 0.030 Above 0.100 below. Here, the non-metallic impurity concentration C is a value calculated from the sum of total organic carbon (TOC) and chloride ion (Cl - ) concentrations in the copper electrolyte, and the copper precipitation rate m is determined by the following formula: m =I×M/(n×F) (In the formula, I is the current value (A), M is the molar mass of copper (g/mol), n is the valence number of copper, and F is Faraday’s constant (C/mol )) Calculated value. If the non-metallic impurity supply ratio RN is within the above-mentioned range, chlorine, low-molecular organic substances, and the like can be supplied within an appropriate speed range for deposition of copper foil. As a result, the roughness of the deposition surface of the electrolytic copper foil can be controlled within an appropriate range, and the parameters required for the roughened copper foil of the present invention can be easily satisfied.

用於形成粗化處理面之粗化處理可藉由於銅箔上利用銅或銅合金形成粗化粒子而良好地進行。進行粗化處理前之銅箔可為未經粗化之銅箔,亦可為實施了預粗化者。關於將要進行粗化處理之銅箔之表面,依據JIS B0601-1994所測得之十點平均粗糙度Rz較佳為0.50 μm以上15.00 μm以下,更佳為0.50 μm以上2.00 μm以下。若處於上述範圍內,則容易對粗化處理面賦予對本發明之粗化處理銅箔所要求之表面輪廓。Roughening treatment for forming a roughened surface can be favorably performed by forming roughening particles with copper or a copper alloy on copper foil. The copper foil before the roughening treatment may be a non-roughened copper foil, or may be pre-roughened. Regarding the surface of the copper foil to be roughened, the ten-point average roughness Rz measured in accordance with JIS B0601-1994 is preferably from 0.50 μm to 15.00 μm, more preferably from 0.50 μm to 2.00 μm. If it exists in the said range, it will become easy to provide the surface profile required for the roughening process copper foil of this invention to a roughening process surface.

粗化處理例如較佳為於包含銅濃度7 g/L以上17 g/L以下、硫酸濃度50 g/L以上200 g/L以下之硫酸銅溶液中,在20℃以上40℃以下之溫度下,以2.00 A/dm 2以上50 A/dm 2以下進行電解析出。該電解析出較佳為進行0.5秒以上30秒以下,更佳為進行1秒以上30秒以下,進而較佳為進行1秒以上5秒以下。但本發明之粗化處理銅箔並不限於上述方法,可為藉由任意方法製造者。 Roughening treatment, for example, is preferably performed at a temperature of 20°C to 40°C in a copper sulfate solution containing a copper concentration of 7 g/L to 17 g/L and a sulfuric acid concentration of 50 g/L to 200 g/L. , electrolytic precipitation is carried out at 2.00 A/dm 2 or more and 50 A/dm 2 or less. The electrolysis is preferably performed for 0.5 seconds to 30 seconds, more preferably for 1 second to 30 seconds, and still more preferably for 1 second to 5 seconds. However, the roughened copper foil of the present invention is not limited to the above method, and may be manufactured by any method.

當上述電解析出時,較佳為將藉由下述式: R L=L/D C(式中,R L為溶液電阻指數(mm・L/mol),L為極間(陽極-陰極間)距離(mm),D C為電荷載體密度(mol/L)) 所定義之溶液電阻指數R L設為9.0 mm・L/mol以上20.0 mm・L/mol以下,更佳為設為11.0 mm・L/mol以上17.0 mm・L/mol以下。藉由如上所述增大溶液電阻指數R L,而使整個系統中之電壓變大,突塊形成反應時之電壓亦變大。其對突塊形狀造成影響,結果,能夠良好地形成適於賦予對本發明之粗化處理銅箔所要求之表面輪廓的形狀之突塊。再者,電荷載體密度D C可藉由對於存在於鍍覆液中之所有離子,將各離子濃度及價數之積進行合計而算出。例如,於使用包含硫酸銅及硫酸之溶液作為鍍覆液之情形時,電荷載體密度D C可藉由下述式算出: Dc=[H ]×1+[Cu 2 ]×2+[SO 4 2-]×2 (式中,[H ]為溶液中之氫離子濃度(mol/L),[Cu 2 ]為溶液中之銅離子濃度(mol/L),[SO 4 2-]為溶液中之硫酸根離子濃度(mol/L))。 When the above-mentioned electrolysis is separated, it is preferred to use the following formula: RL = L/D C (wherein, RL is the solution resistance index (mm L/mol), L is the inter-electrode (anode-cathode distance (mm), D C is the charge carrier density (mol/L)), the solution resistance index R L defined by the solution is set to 9.0 mm・L/mol or more and 20.0 mm・L/mol or less, and it is better to set it to 11.0 Above mm・L/mol and below 17.0 mm・L/mol. By increasing the solution resistance index RL as described above, the voltage in the entire system is increased, and the voltage at the time of the bump formation reaction is also increased. This affects the shape of the bumps, and as a result, bumps of a shape suitable for giving the surface profile required for the roughened copper foil of the present invention can be formed favorably. Furthermore, the charge carrier density DC can be calculated by summing up the products of the respective ion concentrations and valence numbers for all the ions present in the plating solution. For example, when a solution containing copper sulfate and sulfuric acid is used as the plating solution, the charge carrier density D C can be calculated by the following formula: Dc=[H + ]×1+[Cu 2 + ]×2+[SO 4 2- ]×2 (where [H ] is the concentration of hydrogen ions in the solution (mol/L), [Cu 2 ] is the concentration of copper ions in the solution (mol/L), [SO 4 2- ] is the sulfate ion concentration in the solution (mol/L)).

對溶液電阻指數R L與電壓之關係作如下說明。首先,藉由歐姆定律導出下述式: V=ρ×L×I/S (式中,V為電壓,ρ為比電阻,L為極間距離,I為電流,S為極間之截面積)。即,電壓V與比電阻ρ、極間距離L、及電流密度(=I/S)成比例。並且,比電阻ρ與上述電荷載體密度D C成反比例。因此,於電流密度一定之情形時,藉由增大(與極間距離L成比例,與電荷載體密度D C成反比例之)溶液電阻指數,電壓亦變大。因此,溶液電阻指數可以說為與溶液之電阻相關聯之指標。 The relationship between the solution resistance index RL and the voltage is explained as follows. First, the following formula is derived by Ohm's law: V=ρ×L×I/S (where, V is the voltage, ρ is the specific resistance, L is the distance between electrodes, I is the current, and S is the cross-sectional area between the electrodes ). That is, the voltage V is proportional to the specific resistance ρ, the inter-electrode distance L, and the current density (=I/S). And, the specific resistance ρ is inversely proportional to the above-mentioned charge carrier density D C . Therefore, when the current density is constant, by increasing the solution resistance index (proportional to the inter-electrode distance L and inversely proportional to the charge carrier density D C ), the voltage also increases. Therefore, the solution resistance index can be said to be an index related to the resistance of the solution.

視需要,粗化處理可包括對上述粗化處理(第一粗化處理)後之表面於特定條件下進行電解析出之第二粗化處理,亦可進而包括對第二粗化處理後之表面於特定條件下進行電解析出之第三粗化處理。關於第二粗化處理之較佳之條件,對第一粗化處理於上文所述之較佳之條件可直接適用。If necessary, the roughening treatment may include the second roughening treatment of performing electrolytic deposition on the surface after the above roughening treatment (first roughening treatment) under specific conditions, and may further include the second roughening treatment on the surface after the second roughening treatment. The surface is subjected to the third roughening treatment of electrolysis under specific conditions. Regarding the preferred conditions for the second roughening treatment, the preferred conditions for the first roughening treatment described above can be directly applied.

另一方面,關於第三粗化處理,較佳為於例如包含銅濃度65 g/L以上80 g/L以下、硫酸濃度50 g/L以上200 g/L以下之硫酸銅溶液中,在45℃以上55℃以下之溫度下,以1 A/dm 2以上5 A/dm 2以下進行電解析出。該電解析出較佳為進行1秒以上10秒以下,更佳為進行5秒以上8秒以下。又,當電解析出時,較佳為將溶液電阻指數R L設為2.0 mm・L/mol以上9.0 mm・L/mol以下,更佳為設為5.0 mm・L/mol以上8.0 mm・L/mol以下。 On the other hand, for the third roughening treatment, it is preferable to use copper sulfate solution at 45 g/L to 80 g/L with a copper concentration of 65 g/L to 80 g/L and a sulfuric acid concentration of 50 g/L to 200 g/L. Electrodeposition is carried out at a temperature of 55°C to 55°C and at a temperature of 1 A/dm 2 to 5 A/dm 2 . This electrolysis is preferably performed for 1 second to 10 seconds, more preferably for 5 seconds to 8 seconds. Also, when electrolytically desorbing, it is preferable to set the solution resistance index R L to 2.0 mm・L/mol or more and 9.0 mm・L/mol or less, more preferably 5.0 mm・L/mol or more to 8.0 mm・L /mol below.

視需要,粗化處理銅箔亦可為實施防銹處理而形成有防銹處理層者。防銹處理較佳為包含使用鋅之鍍覆處理。使用鋅之鍍覆處理可為鋅鍍覆處理及鋅合金鍍覆處理之任一種,鋅合金鍍覆處理尤佳為鋅-鎳合金處理。鋅-鎳合金處理可為至少包含Ni及Zn之鍍覆處理,亦可進而包含Sn、Cr、Co、Mo等其他元素。例如,藉由使防銹處理層除了包含Ni及Zn以外,亦進而包含Mo,粗化處理銅箔之處理表面之與樹脂之密接性、耐化學品性及耐熱性更加優異,且不易殘留蝕刻殘渣。If necessary, the roughened copper foil may be provided with an antirust treatment to form an antirust treatment layer. The antirust treatment preferably includes plating treatment using zinc. The plating treatment using zinc may be any of zinc plating treatment and zinc alloy plating treatment, and the zinc alloy plating treatment is particularly preferably zinc-nickel alloy treatment. The zinc-nickel alloy treatment may be a plating treatment including at least Ni and Zn, and may further include other elements such as Sn, Cr, Co, and Mo. For example, by making the antirust treatment layer include Mo in addition to Ni and Zn, the treated surface of the roughened copper foil is more excellent in adhesion to resin, chemical resistance, and heat resistance, and it is difficult to leave etching. residue.

鋅-鎳合金鍍覆中之Ni附著量相對於Zn附著量及Ni附著量之合計量之比率Ni/(Zn+Ni)以質量比計,較佳為0.3以上0.9以下,更佳為0.4以上0.9以下,進而較佳為0.4以上0.8以下。又,鋅-鎳合金鍍覆中之Zn及Ni之合計附著量較佳為8 mg/m 2以上160 mg/m 2以下,更佳為13 mg/m 2以上130 mg/m 2以下,進而較佳為19 mg/m 2以上80 mg/m 2以下。另一方面,鋅-鎳-鉬合金鍍覆中之Ni附著量相對於Zn附著量、Ni附著量及Mo附著量之合計量之比率Ni/(Zn+Ni+Mo)以質量比計,較佳為0.20以上0.80以下,更佳為0.25以上0.75以下,進而較佳為0.30以上0.65以下。又,鋅-鎳-鉬合金鍍覆中之Zn、Ni及Mo之合計附著量較佳為10 mg/m 2以上200 mg/m 2以下,更佳為15 mg/m 2以上150 mg/m 2以下,進而較佳為20 mg/m 2以上90 mg/m 2以下。Zn、Ni及Mo之各附著量可藉由如下方式算出,即,利用酸使粗化處理銅箔之粗化處理面中之特定之面積(例如,25 cm 2)溶解,基於ICP(Inductively Coupled Plasma,電感耦合電漿)發光分析法對所獲得之溶解液中之各元素濃度進行分析。 The ratio Ni/(Zn+Ni) of the Ni deposition amount to the Zn deposition amount and the total Ni deposition amount in zinc-nickel alloy plating is, in terms of mass ratio, preferably 0.3 to 0.9, more preferably 0.4 to 0.9 , and more preferably not less than 0.4 and not more than 0.8. Also, the total deposition amount of Zn and Ni in the zinc-nickel alloy plating is preferably 8 mg/ m to 160 mg/m, more preferably 13 mg/ m to 130 mg/m, and further Preferably it is not less than 19 mg/m 2 and not more than 80 mg/m 2 . On the other hand, the ratio Ni/(Zn+Ni+Mo) of the Ni deposition amount to the total amount of Zn deposition amount, Ni deposition amount, and Mo deposition amount in zinc-nickel-molybdenum alloy plating is preferably 0.20 or more in terms of mass ratio 0.80 or less, more preferably 0.25 to 0.75, still more preferably 0.30 to 0.65. In addition, the total deposition amount of Zn, Ni and Mo in zinc-nickel-molybdenum alloy plating is preferably 10 mg/ m2 to 200 mg/ m2 , more preferably 15 mg/ m2 to 150 mg/m2 2 or less, more preferably 20 mg/m 2 or more and 90 mg/m 2 or less. The respective adhesion amounts of Zn, Ni, and Mo can be calculated by dissolving a specific area (for example, 25 cm 2 ) of the roughened surface of the roughened copper foil with acid, based on ICP (Inductively Coupled Plasma (Inductively Coupled Plasma) luminescence analysis method is used to analyze the concentration of each element in the obtained solution.

防銹處理較佳為進而包含鉻酸鹽處理,該鉻酸鹽處理更佳為在使用鋅之鍍覆處理之後,在包含鋅之鍍覆層之表面進行。如此,能夠進一步提高防銹性。尤佳之防銹處理為鋅-鎳合金鍍覆處理(或鋅-鎳-鉬合金鍍覆處理)與其後之鉻酸鹽處理之組合。The antirust treatment preferably further includes chromate treatment, and this chromate treatment is more preferably performed on the surface of the plating layer containing zinc after the plating treatment using zinc. In this way, rust resistance can be further improved. A particularly preferred antirust treatment is a combination of zinc-nickel alloy plating (or zinc-nickel-molybdenum alloy plating) followed by chromate treatment.

視需要,粗化處理銅箔亦可為對表面實施矽烷偶合劑處理而形成有矽烷偶合劑處理層者。藉此能夠提高耐濕性、耐化學品性及與接著劑等之密接性等。矽烷偶合劑處理層可藉由適當稀釋矽烷偶合劑進行塗佈並使之乾燥而形成。作為矽烷偶合劑之例,可例舉:4-縮水甘油基丁基三甲氧基矽烷、3-縮水甘油氧基丙基三甲氧基矽烷等環氧基官能性矽烷偶合劑、或3-胺基丙基三乙氧基矽烷、N-(2-胺基乙基)-3-胺基丙基三甲氧基矽烷、N-3-(4-(3-胺基丙氧基)丁氧基)丙基-3-胺基丙基三甲氧基矽烷、N-苯基-3-胺基丙基三甲氧基矽烷等胺基官能性矽烷偶合劑、或3-巰基丙基三甲氧基矽烷等巰基官能性矽烷偶合劑或乙烯基三甲氧基矽烷、乙烯基苯基三甲氧基矽烷等烯烴官能性矽烷偶合劑、或3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-丙烯醯氧基丙基三甲氧基矽烷等丙烯醯基官能性矽烷偶合劑、或咪唑矽烷等咪唑官能性矽烷偶合劑、或三𠯤矽烷等三𠯤官能性矽烷偶合劑等。If necessary, the roughened copper foil may be treated with a silane coupling agent on the surface to form a silane coupling agent treated layer. Thereby, moisture resistance, chemical resistance, adhesiveness with an adhesive, etc. can be improved. The silane coupling agent treatment layer can be formed by appropriately diluting the silane coupling agent, coating and drying it. Examples of silane coupling agents include epoxy-functional silane coupling agents such as 4-glycidylbutyltrimethoxysilane and 3-glycidyloxypropyltrimethoxysilane, or 3-amino Propyltriethoxysilane, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, N-3-(4-(3-aminopropoxy)butoxy) Amino-functional silane coupling agents such as propyl-3-aminopropyltrimethoxysilane and N-phenyl-3-aminopropyltrimethoxysilane, or mercapto groups such as 3-mercaptopropyltrimethoxysilane Functional silane coupling agent or olefin functional silane coupling agent such as vinyltrimethoxysilane and vinylphenyltrimethoxysilane, or 3-methacryloxypropyltrimethoxysilane, 3-acryloxy Acryl functional silane coupling agents such as propyltrimethoxysilane, imidazole functional silane coupling agents such as imidazole silane, or trisyl functional silane coupling agents such as trimethoxysilane, etc.

根據上述理由,粗化處理銅箔較佳為在粗化處理面具備防銹處理層及/或矽烷偶合劑處理層,更佳為具備防銹處理層及矽烷偶合劑處理層雙方。於在粗化處理面形成有防銹處理層及/或矽烷偶合劑處理層之情形時,本說明書中之Sdr及Sk之各數值意指對形成防銹處理層及/或矽烷偶合劑處理層後之粗化處理銅箔之表面進行測定及解析所獲得之數值。再者,防銹處理層及矽烷偶合劑處理層可不僅形成於粗化處理銅箔之粗化處理面側,亦形成於未形成粗化處理面之側。For the above reasons, the roughened copper foil preferably has an antirust treatment layer and/or a silane coupling agent treatment layer on the roughening treatment surface, and more preferably has both the antirust treatment layer and the silane coupling agent treatment layer. In the case where an antirust treatment layer and/or a silane coupling agent treatment layer is formed on the roughened surface, each value of Sdr and Sk in this specification means that the antirust treatment layer and/or the silane coupling agent treatment layer are formed. After roughening the surface of the copper foil to measure and analyze the obtained value. Furthermore, the antirust treatment layer and the silane coupling agent treatment layer may be formed not only on the roughening treatment surface side of the roughening treatment copper foil but also on the side where the roughening treatment surface is not formed.

銅箔積層板根據本發明之較佳之態樣,提供一種銅箔積層板。該銅箔積層板具備樹脂層、及設置於樹脂層之至少一個表面之粗化處理銅箔。該粗化處理銅箔在至少一側具有粗化處理面,粗化處理面與樹脂層相接。粗化處理銅箔之粗化處理面之界面之展開面積比Sdr為70.0%以下。又,粗化處理銅箔之與粗化處理面相反一側之面於藉由EBSD進行解析之情形時,於觀察視野中,針對自(111)面偏移之角度為20度以下之各晶粒算出的晶界長度L相對於佔有面積S之比L/S之平均值為13.0 μm/μm 2以下。根據該銅箔積層板,能夠如上所述實現優異之傳輸特性。 Copper-clad laminated board According to a preferred aspect of the present invention, a copper-clad laminated board is provided. The copper foil laminate includes a resin layer and a roughened copper foil provided on at least one surface of the resin layer. This roughened copper foil has a roughened surface on at least one side, and the roughened surface is in contact with the resin layer. The developed area ratio Sdr of the interface of the roughened surface of the roughened copper foil is 70.0% or less. In addition, when the surface of the roughened copper foil opposite to the roughened surface is analyzed by EBSD, in the observation field of view, for each crystal whose angle of deviation from the (111) plane is 20 degrees or less The average value of the ratio L/S of the calculated grain boundary length L to the occupied area S of the grains was 13.0 μm/μm 2 or less. According to this copper foil laminated board, excellent transmission characteristics can be realized as described above.

銅箔積層板所具備之樹脂層係包含樹脂、較佳為絕緣性樹脂而成。樹脂層較佳為預浸體及/或樹脂片材。預浸體係使合成樹脂板、玻璃板、玻璃織布、玻璃不織布、紙等基材含浸合成樹脂而成之複合材料之統稱。作為絕緣性樹脂之較佳之例,可例舉:環氧樹脂、氰酸酯樹脂、雙馬來醯亞胺三𠯤樹脂(BT樹脂)、聚苯醚樹脂、酚樹脂等。又,作為構成樹脂片材之絕緣性樹脂之例,可例舉:環氧樹脂、聚醯亞胺樹脂、聚酯樹脂等絕緣樹脂。又,就提高絕緣性等觀點而言,在樹脂層中亦可含有包含二氧化矽、氧化鋁等各種無機粒子之填料粒子等。樹脂層之厚度並無特別限定,較佳為1 μm以上1000 μm以下,更佳為2 μm以上400 μm以下,進而較佳為3 μm以上200 μm以下。樹脂層可包含複數個層。預浸體及/或樹脂片材等樹脂層亦可經由預先塗佈在銅箔表面之底塗樹脂層而設置於粗化處理銅箔。The resin layer included in the copper foil laminate includes resin, preferably insulating resin. The resin layer is preferably a prepreg and/or a resin sheet. Prepreg system is a general term for composite materials made by impregnating synthetic resin boards, glass boards, glass woven fabrics, glass non-woven fabrics, paper and other substrates with synthetic resins. Preferable examples of insulating resins include epoxy resins, cyanate resins, bismaleimide tristannium resins (BT resins), polyphenylene ether resins, and phenol resins. Moreover, examples of the insulating resin constituting the resin sheet include insulating resins such as epoxy resins, polyimide resins, and polyester resins. In addition, from the viewpoint of improving insulation, etc., filler particles including various inorganic particles such as silica and alumina may be contained in the resin layer. The thickness of the resin layer is not particularly limited, but is preferably from 1 μm to 1000 μm, more preferably from 2 μm to 400 μm, and still more preferably from 3 μm to 200 μm. The resin layer may contain a plurality of layers. Resin layers such as prepregs and/or resin sheets can also be provided on the roughened copper foil through the primer resin layer coated on the surface of the copper foil in advance.

銅箔積層板所具備之粗化處理銅箔之粗化處理面中之界面之展開面積比Sdr為70.0%以下,較佳為5.0%以上60.0%以下,更佳為10.0%以上50.0%以下,進而較佳為20.0%以上45.0%以下。又,粗化處理銅箔之粗化處理面之核心部之階層差Sk較佳為1.70 μm以下,更佳為0.10 μm以上1.50 μm以下,進而較佳為0.50 μm以上1.40 μm以下,尤佳為0.90 μm以上1.20 μm以下。The developed area ratio Sdr of the interface on the roughened surface of the roughened copper foil of the copper foil laminate is 70.0% or less, preferably 5.0% to 60.0%, more preferably 10.0% to 50.0%, More preferably, it is 20.0% or more and 45.0% or less. Furthermore, the step difference Sk of the core portion of the roughened surface of the roughened copper foil is preferably 1.70 μm or less, more preferably 0.10 μm or more and 1.50 μm or less, further preferably 0.50 μm or more and 1.40 μm or less, and especially preferably 0.90 μm or more and 1.20 μm or less.

粗化處理銅箔之與粗化處理面相反一側之面之L/S之平均值為13.0 μm/μm 2以下,較佳為2.0 μm/μm 2以上11.0 μm/μm 2以下,更佳為3.0 μm/μm 2以上10.0 μm/μm 2以下,進而較佳為5.0 μm/μm 2以上9.0 μm/μm 2以下。又,粗化處理銅箔之與粗化處理面相反一側之面於藉由EBSD進行解析之情形時,於觀察視野中,自(111)面偏移之角度為20度以下之晶粒之合計佔有面積A 1相對於自(100)面偏移之角度為20度以下之晶粒之合計佔有面積A 2、自(010)面偏移之角度為20度以下之晶粒之合計佔有面積A 3、及自(001)面偏移之角度為20度以下之晶粒之合計佔有面積A 4之和(A 2+A 3+A 4)的比A 1/(A 2+A 3+A 4)較佳為0.10以上0.60以下,更佳為0.15以上0.55以下,進而較佳為0.20以上0.50以下。 The average value of L/S of the roughened copper foil on the side opposite to the roughened surface is 13.0 μm/μm 2 or less, preferably 2.0 μm/μm 2 or more and 11.0 μm/μm 2 or less, more preferably 3.0 μm/μm 2 to 10.0 μm/μm 2 , more preferably 5.0 μm/μm 2 to 9.0 μm/μm 2 . In addition, when the surface of the roughened copper foil opposite to the roughened surface is analyzed by EBSD, in the observation field of view, the angle of deviation from the (111) plane is 20 degrees or less. The total occupied area A 1 is relative to the total occupied area A 2 of crystal grains whose angle of deviation from the (100) plane is 20 degrees or less, and the total occupied area of crystal grains whose angle of deviation from the (010) plane is 20 degrees or less A 3 , and the ratio A 1 /(A 2 +A 3 +A 4 ) of the sum (A 2 +A 3 +A 4 ) of the total occupied area A 4 of grains whose angle of deviation from the (001) plane is 20 degrees or less Preferably, it is not less than 0.10 and not more than 0.60, more preferably not less than 0.15 and not more than 0.55, still more preferably not less than 0.20 and not more than 0.50.

作為銅箔積層板所具備之粗化處理銅箔,典型的是直接使用本發明之粗化處理銅箔。因此,本發明之粗化處理銅箔之較佳之態樣可直接用作銅箔積層板所具備之粗化處理銅箔之較佳之態樣。但銅箔積層板所具備之粗化處理銅箔只要滿足上述參數即可,可適當變更本發明之粗化處理銅箔。Typically, the roughened copper foil of the present invention is used as it is as the roughened copper foil included in the copper foil laminate. Therefore, the preferred aspect of the roughened copper foil of the present invention can be directly used as a preferred aspect of the roughened copper foil of the copper foil laminate. However, the roughened copper foil included in the copper-clad laminate should only satisfy the above parameters, and the roughened copper foil of the present invention can be appropriately changed.

印刷配線板之製造方法本發明之粗化處理銅箔或銅箔積層板較佳為用於製造印刷配線板。即,根據本發明之較佳之態樣,提供一種印刷配線板之製造方法。該方法包括如下各步驟:(1)粗化處理銅箔之準備、(2)銅箔積層板之製作、(3)電路之形成、(4)利用蝕刻之粗化處理、及(5)視需要進行之樹脂之積層。以下,一面參照圖4及5,一面對步驟(1)~(5)之各者進行說明。 The manufacturing method of a printed wiring board It is preferable that the roughened copper foil of this invention or a copper foil laminated board is used for manufacturing a printed wiring board. That is, according to a preferable aspect of this invention, the manufacturing method of a printed wiring board is provided. The method includes the following steps: (1) preparation of roughened copper foil, (2) fabrication of copper foil laminate, (3) formation of circuit, (4) roughening by etching, and (5) visual inspection. Lamination of resin that needs to be carried out. Hereinafter, each of steps (1) to (5) will be described with reference to FIGS. 4 and 5 .

(1)粗化處理銅箔之準備 如圖4(i)所示,準備粗化處理銅箔10。粗化處理銅箔10在至少一側具有粗化處理面10a。該粗化處理面10a之界面之展開面積比Sdr為70.0%以下,較佳為5.0%以上60.0%以下,更佳為10.0%以上50.0%以下,進而較佳為20.0%以上45.0%以下。若為上述範圍內之Sdr,則確保與下述樹脂層之較高之密接性,且成為便於實現優異傳輸特性之富於凹凸之形狀。 (1) Preparation of roughened copper foil As shown in FIG. 4( i ), a roughened copper foil 10 is prepared. The roughened copper foil 10 has the roughened surface 10a on at least one side. The developed area ratio Sdr of the interface of the roughened surface 10a is 70.0% or less, preferably 5.0% to 60.0%, more preferably 10.0% to 50.0%, further preferably 20.0% to 45.0%. If the Sdr is within the above range, high adhesion to the resin layer described below will be ensured, and a shape rich in concavo-convexities for realizing excellent transmission characteristics will be obtained.

粗化處理銅箔10之粗化處理面10a之核心部之階層差Sk較佳為1.70 μm以下,更佳為0.10 μm以上1.50 μm以下,進而較佳為0.50 μm以上1.40 μm以下,尤佳為0.90 μm以上1.20 μm以下。The step difference Sk of the core portion of the roughened surface 10a of the roughened copper foil 10 is preferably 1.70 μm or less, more preferably 0.10 μm or more and 1.50 μm or less, further preferably 0.50 μm or more and 1.40 μm or less, and especially preferably 0.90 μm or more and 1.20 μm or less.

(2)銅箔積層板之製作 如圖4(ii)所示,將所準備之粗化處理銅箔10以粗化處理面10a與樹脂層12相接之方式積層於樹脂層12之至少一個表面。如此,製作銅箔積層板14。 (2) Production of copper foil laminates As shown in FIG. 4(ii), the prepared roughened copper foil 10 is laminated on at least one surface of the resin layer 12 so that the roughened surface 10a is in contact with the resin layer 12 . In this way, the copper foil laminated board 14 is produced.

粗化處理銅箔10與樹脂層12之積層較佳為藉由熱壓進行。熱壓之熱負荷條件(溫度或時間等)只要根據樹脂之種類進行適當確定即可,並無特別限定。關於樹脂層12之較佳之態樣,如對銅箔積層板於上文所述。Lamination of the roughened copper foil 10 and the resin layer 12 is preferably performed by hot pressing. The heat load conditions (temperature, time, etc.) of hot pressing are not particularly limited as long as they are appropriately determined according to the type of resin. A preferred aspect of the resin layer 12 is as described above for the copper foil laminated board.

(3)電路之形成 如圖4(iii)所示,對銅箔積層板14之粗化處理銅箔10進行加工,形成電路16。粗化處理銅箔10之加工只要基於公知之方法進行即可,並無特別限定。例如,可使用減成法、半加成法(SAP)、改良型半加成法(MSAP)等方法來形成特定圖案之電路16。 (3) Formation of circuit As shown in FIG. 4(iii), the roughened copper foil 10 of the copper foil laminate 14 is processed to form a circuit 16 . Processing of the roughened copper foil 10 is not particularly limited as long as it is performed based on a known method. For example, methods such as subtractive method, semi-additive method (SAP), modified semi-additive method (MSAP) and the like can be used to form the circuit 16 with a specific pattern.

進行下述利用蝕刻之粗化處理前之電路16之表面於藉由EBSD進行解析之情形時,於觀察視野中,針對自(111)面偏移之角度為20度以下之各晶粒算出的晶界長度L相對於佔有面積S之比L/S之平均值為13.0 μm/μm 2以下,較佳為2.0 μm/μm 2以上11.0 μm/μm 2以下,更佳為3.0 μm/μm 2以上10.0 μm/μm 2以下,進而較佳為5.0 μm/μm 2以上9.0 μm/μm 2以下。若為上述範圍內之L/S之平均值,則經利用蝕刻之處理後之電路16之表面形狀變得平滑,能夠實現優異之傳輸特性。 When the surface of the circuit 16 before the following roughening treatment by etching is analyzed by EBSD, it is calculated for each crystal grain whose angle of deviation from the (111) plane is 20 degrees or less in the observation field of view. The average value of the ratio L/S of the grain boundary length L to the occupied area S is 13.0 μm/μm 2 or less, preferably 2.0 μm/μm 2 or more and 11.0 μm/μm 2 or less, more preferably 3.0 μm/μm 2 or more 10.0 μm/μm 2 or less, more preferably 5.0 μm/μm 2 or more and 9.0 μm/μm 2 or less. If the average value of L/S is within the above range, the surface shape of the circuit 16 after the etching process becomes smooth, and excellent transmission characteristics can be realized.

進行下述利用蝕刻之粗化處理前之電路16之表面於藉由EBSD進行解析之情形時,於觀察視野中,自(111)面偏移之角度為20度以下之晶粒之合計佔有面積A 1相對於自(100)面偏移之角度為20度以下之晶粒之合計佔有面積A 2、自(010)面偏移之角度為20度以下之晶粒之合計佔有面積A 3、及自(001)面偏移之角度為20度以下之晶粒之合計佔有面積A 4之和(A 2+A 3+A 4)的比A 1/(A 2+A 3+A 4)較佳為0.10以上0.60以下,更佳為0.15以上0.55以下,進而較佳為0.20以上0.50以下。 When the surface of the circuit 16 is analyzed by EBSD before performing the following roughening treatment by etching, the total occupied area of crystal grains whose angle of deviation from the (111) plane is 20 degrees or less in the observation field of view A 1 is relative to the total occupied area A 2 of the crystal grains whose angle of deviation from the (100) plane is 20 degrees or less, the total occupied area A 3 of the crystal grains whose angle of deviation from the (010) plane is 20 degrees or less, And the ratio A 1 /(A 2 +A 3 +A 4 ) of the sum (A 2 +A 3 +A 4 ) of the total occupied area A 4 of grains whose angle of deviation from the (001) plane is 20 degrees or less is preferably 0.10 It is not less than 0.60, more preferably not less than 0.15 and not more than 0.55, and still more preferably not less than 0.20 and not more than 0.50.

(4)利用蝕刻之粗化處理 如圖5(iv)所示,對電路16進行利用蝕刻之粗化處理。如此,對電路16表面賦予粗化形狀16a。藉此,當下述樹脂層積層時,能夠提高電路16與其周圍之樹脂之可靠性(密接性或耐熱性等)。 (4) Roughening treatment by etching As shown in FIG. 5(iv), the circuit 16 is roughened by etching. In this way, the roughened shape 16a is given to the surface of the circuit 16 . Thereby, the reliability (adhesiveness, heat resistance, etc.) of the circuit 16 and the surrounding resin can be improved when the resins described below are laminated.

利用蝕刻之粗化處理較佳為藉由對電路16表面進行部分蝕刻來進行。蝕刻只要基於公知之方法進行即可,並無特別限定。作為代表性蝕刻液,可例舉:包含硫酸及過氧化氫之液、包含過硫酸鈉之液等。再者,在該等液中亦可包含以控制基於蝕刻之粗化形狀或穩定蝕刻速度等為目的之添加劑。Roughening by etching is preferably performed by partially etching the surface of the circuit 16 . Etching is not particularly limited as long as it is performed based on a known method. As a representative etchant, a solution containing sulfuric acid and hydrogen peroxide, a solution containing sodium persulfate, and the like may, for example, be mentioned. In addition, these liquids may contain additives for the purpose of controlling the roughened shape by etching, stabilizing the etching rate, and the like.

(5)樹脂之積層(任意步驟) 亦可視需要,如圖5(v)所示,以覆蓋利用蝕刻之處理後之電路16之方式進一步積層樹脂層12'。如此,可將電路16設為內層電路。樹脂層12'之材質及/或厚度可與樹脂層12相同,亦可不同。 (5) Lamination of resin (any step) Optionally, as shown in FIG. 5( v ), the resin layer 12 ′ can be further laminated so as to cover the circuit 16 processed by etching. In this way, the circuit 16 can be used as an inner layer circuit. The material and/or thickness of the resin layer 12' may be the same as that of the resin layer 12, or may be different.

亦可視需要,在樹脂層12'上進一步交替形成電路及樹脂層,製成多層配線板。又,本發明之方法除了上述步驟以外,可適當追加通常印刷配線板中所採用之公知之工藝。 [實施例] Optionally, circuits and resin layers may be alternately formed on the resin layer 12' to form a multilayer wiring board. Moreover, in addition to the above-mentioned steps, the method of the present invention may appropriately add known processes commonly used in printed wiring boards. [Example]

藉由以下之例進一步具體說明本發明。The present invention is further specifically described by the following examples.

1 5本發明之粗化處理銅箔之製造如下所示進行。 Examples 1-5 The manufacture of the roughening process copper foil of this invention was performed as follows.

(1)電解銅箔之製造 製備銅濃度80 g/L及硫酸濃度300 g/L之硫酸酸性硫酸銅溶液作為銅電解液。以約3.0 g之活性碳接觸20秒左右之方式對該硫酸酸性硫酸銅溶液1 L進行活性碳處理。其後,僅於例4中,於銅電解液中以濃度成為5 ppm之方式添加動物膠。使用活性碳處理後(例1~3及5)或動物膠添加後(例4)之銅電解液,陰極使用鈦製電極,陽極使用DSA(尺寸穩定陽極),於溶液溫度45℃、電流密度40 A/dm 2以上100 A/dm 2以下、及表1所示之非金屬雜質供給比之條件下進行電解,獲得厚度18 μm之電解銅箔。 (1) Manufacture of electrolytic copper foil A sulfuric acid copper sulfate solution with a copper concentration of 80 g/L and a sulfuric acid concentration of 300 g/L was prepared as a copper electrolyte. Activated carbon treatment was performed on 1 L of the sulfuric acid acidic copper sulfate solution by contacting about 3.0 g of activated carbon for about 20 seconds. Thereafter, only in Example 4, animal glue was added to the copper electrolytic solution so that the concentration became 5 ppm. Use the copper electrolyte after activated carbon treatment (Example 1-3 and 5) or after adding animal glue (Example 4), use titanium electrode as the cathode, and use DSA (dimensionally stable anode) as the anode. 40 A/dm 2 to 100 A/dm 2 , and the conditions of the non-metallic impurity supply ratio shown in Table 1 were electrolyzed to obtain an electrolytic copper foil with a thickness of 18 μm.

(2)粗化處理 對上述電解銅箔所具備之電極面及析出面之中之電極面側進行粗化處理。該粗化處理如表1所示,於例1中,設為2個階段之粗化處理(第一粗化處理及第二粗化處理),於例2及4中,設為1個階段之粗化處理(第一粗化處理),於例3及5中,設為3個階段之粗化處理(第一粗化處理、第二粗化處理及第三粗化處理)。 (2) Coarsening treatment Roughening treatment was performed on the electrode surface side among the electrode surface and the deposition surface included in the above-mentioned electrolytic copper foil. The roughening process is shown in Table 1. In Example 1, it was set as a two-stage roughening process (the first roughening process and the second roughening process), and in Examples 2 and 4, it was set as one stage. The roughening treatment (first roughening treatment) in Examples 3 and 5 was set as three-stage roughening treatment (first roughening treatment, second roughening treatment, and third roughening treatment).

各階段中之粗化處理之條件如下所示。 -第一粗化處理係藉由如下方式進行,即,於粗化處理用銅電解溶液(銅濃度:7 g/L以上17 g/L以下,硫酸濃度:50 g/L以上200 g/L以下,液溫:30℃)中,於表1所示之溶液電阻指數、電流密度及時間之條件下進行電解,並進行水洗。 -第二粗化處理係藉由如下方式進行,即,於與第一粗化處理相同組成之粗化處理用銅電解溶液中,於表1所示之溶液電阻指數、電流密度及時間之條件下進行電解,並進行水洗。 -第三粗化處理係藉由如下方式進行,即,於粗化處理用銅電解溶液(銅濃度:65 g/L以上80 g/L以下,硫酸濃度:50 g/L以上200 g/L以下,液溫:45℃)中,於表1所示之溶液電阻指數、電流密度及時間之條件下進行電解,並進行水洗。 Conditions of roughening in each stage are as follows. -The first roughening treatment is carried out in the following manner, that is, in the copper electrolytic solution for roughening treatment (copper concentration: 7 g/L to 17 g/L, sulfuric acid concentration: 50 g/L to 200 g/L Below, liquid temperature: 30°C), electrolysis was carried out under the conditions of solution resistance index, current density and time shown in Table 1, and water washing was carried out. - The second roughening treatment is carried out in the following manner, that is, in the copper electrolytic solution for roughening treatment with the same composition as the first roughening treatment, under the conditions of solution resistance index, current density and time shown in Table 1 Under electrolysis, and washed with water. -The third roughening treatment is carried out in the following manner, that is, in the copper electrolytic solution for roughening treatment (copper concentration: 65 g/L to 80 g/L, sulfuric acid concentration: 50 g/L to 200 g/L Below, liquid temperature: 45°C), electrolysis was carried out under the conditions of solution resistance index, current density and time shown in Table 1, and water washing was carried out.

(3)防銹處理 對粗化處理後之電解銅箔進行表1所示之防銹處理。作為該防銹處理,於例1~4中,對電解銅箔之進行了粗化處理之面使用焦磷酸浴,於焦磷酸鉀濃度100 g/L、鋅濃度1 g/L、鎳濃度2 g/L、鉬濃度1 g/L、液溫40℃、電流密度0.5 A/dm 2之條件下進行防銹處理A(鋅-鎳-鉬系防銹處理)。又,對電解銅箔之未進行粗化處理之面使用焦磷酸浴,設為焦磷酸鉀濃度80 g/L、鋅濃度0.2 g/L、鎳濃度2 g/L、液溫40℃、電流密度0.5 A/dm 2進行防銹處理B(鋅-鎳系防銹處理)。另一方面,於例5中,於與例1~4中之電解銅箔之未進行粗化處理之面相同之條件下,對電解銅箔之雙面進行防銹處理B。 (3) Anti-rust treatment The anti-rust treatment shown in Table 1 was performed on the electrolytic copper foil after the roughening treatment. As this antirust treatment, in Examples 1 to 4, a pyrophosphoric acid bath was used on the roughened surface of the electrolytic copper foil, and the concentration of potassium pyrophosphate was 100 g/L, the concentration of zinc was 1 g/L, and the concentration of nickel was 2 Antirust treatment A (zinc-nickel-molybdenum system antirust treatment) was carried out under the conditions of g/L, molybdenum concentration 1 g/L, liquid temperature 40°C, and current density 0.5 A/dm 2 . Also, use a pyrophosphoric acid bath on the surface of the electrolytic copper foil that has not been roughened, and set the concentration of potassium pyrophosphate to 80 g/L, the concentration of zinc to 0.2 g/L, the concentration of nickel to 2 g/L, the liquid temperature to 40°C, and the current Density 0.5 A/dm 2 Anti-rust treatment B (zinc-nickel system anti-rust treatment). On the other hand, in Example 5, antirust treatment B was performed on both surfaces of the electrodeposited copper foil under the same conditions as those of the surface of the electrodeposited copper foil in Examples 1 to 4 that were not subjected to the roughening treatment.

(4)鉻酸鹽處理 對進行了上述防銹處理之電解銅箔之雙面進行鉻酸鹽處理,於防銹處理層之上形成鉻酸鹽層。該鉻酸鹽處理係於鉻酸濃度1 g/L、pH值11、液溫25℃及電流密度1 A/dm 2之條件下進行。 (4) Chromate treatment Chromate treatment was performed on both sides of the electrolytic copper foil subjected to the above antirust treatment, and a chromate layer was formed on the antirust treatment layer. The chromate treatment was carried out under the conditions of chromic acid concentration 1 g/L, pH value 11, liquid temperature 25°C and current density 1 A/dm 2 .

(5)矽烷偶合劑處理 對實施了上述鉻酸鹽處理之銅箔進行水洗,其後立即進行矽烷偶合劑處理,使矽烷偶合劑吸附於粗化處理面之鉻酸鹽層上。該矽烷偶合劑處理係藉由利用噴淋將以純水作為溶劑之矽烷偶合劑之溶液噴附至粗化處理面進行吸附處理來進行。使用3-胺基丙基三甲氧基矽烷作為矽烷偶合劑,其濃度設為3 g/L。於矽烷偶合劑之吸附後,最終藉由電熱器使水分蒸發,獲得特定厚度之粗化處理銅箔。 (5) Silane coupling agent treatment The chromate-treated copper foil was washed with water, and then immediately treated with a silane coupling agent, so that the silane coupling agent was adsorbed on the chromate layer on the roughened surface. The silane coupling agent treatment is carried out by spraying a solution of a silane coupling agent using pure water as a solvent to the roughened surface for adsorption treatment. 3-Aminopropyltrimethoxysilane was used as the silane coupling agent, and its concentration was set at 3 g/L. After the silane coupling agent is adsorbed, the water is finally evaporated by an electric heater to obtain a roughened copper foil with a specific thickness.

[表1] 表1    電解銅箔 粗化處理 防銹處理 處理面 第一粗化處理 第二粗化處理 第三粗化處理 電解液之動物膠濃度 (ppm) 非金屬雜質供給比 (-) 溶液電阻指數 (mm L/mol) 電流密度 (A/dm 2) 時間 (s) 溶液電阻指數 電流密度 (A/dm 2) 時間 (s) 溶液電阻指數 (mm L/mol) 電流密度 (A/dm 2) 時間 (s) 種類 例1 - 0.045 電極面 14.2 5.6 2.7 14.2 16.9 2.7 - - - A 例2 - 0.072 電極面 14.2 33.9 2.7 - - - - - - A 例3 - 0.090 電極面 14.2 16.4 3.2 14.2 27.4 3.2 6.2 4.2 6.5 A 例4* 5 0.111 電極面 14.2 5.6 2.7 - - - - - - A 例5* - 0.097 電極面 8.1 34.0 2.7 7.3 28.5 2.7 6.2 23.1 9.1 B *表示比較例。 [Table 1] Table 1 Electrolytic copper foil Coarsening Anti-rust treatment Processing surface first coarsening second coarsening third roughening Glue Concentration of Electrolyte (ppm) Supply ratio of non-metallic impurities (-) Solution resistance index (mm L/mol) Current density (A/dm 2 ) time(s) Solution resistance index Current density (A/dm 2 ) time(s) Solution resistance index (mm L/mol) Current density (A/dm 2 ) time(s) type example 1 - 0.045 electrode surface 14.2 5.6 2.7 14.2 16.9 2.7 - - - A Example 2 - 0.072 electrode surface 14.2 33.9 2.7 - - - - - - A Example 3 - 0.090 electrode surface 14.2 16.4 3.2 14.2 27.4 3.2 6.2 4.2 6.5 A Example 4* 5 0.111 electrode surface 14.2 5.6 2.7 - - - - - - A Example 5* - 0.097 electrode surface 8.1 34.0 2.7 7.3 28.5 2.7 6.2 23.1 9.1 B * indicates a comparative example.

評價對於所製造之粗化處理銅箔,進行以下所示之各種評價。 Evaluation Various evaluations shown below were performed on the roughened copper foil produced.

(a)EBSD測定 將粗化處理銅箔以180℃加熱1小時,設為EBSD測定用之銅箔樣品。以與粗化處理面相反一側之表面(以下,稱為「非處理面」)成為外側之方式,使用特定之治具固定該銅箔樣品。其後,自銅箔樣品之非處理面,進行利用截面拋光儀(CP)之平面研磨。該平面研磨係於加速電壓6 kV、及傾斜角度5°之條件下實施。然後,將實施平面研磨10分鐘(相當於厚度500 nm)後之銅箔樣品中之非處理面側之表面設為最表面,進行標記及FIB(Focused Ion Beam,聚焦離子束)標記加工。再者,亦可根據銅箔表面之粗糙度,以能夠進行下述EBSD測定之程度適當地變更條件來進行平面研磨。此處,「能夠進行EBSD測定」意指EBSD測定中之命中率為70%以上。命中率係指在試樣之總面積之中,電子束準確地擊中試樣表面所能夠測得之面積之比率。命中率為70%以上意指當使用掃描式電子顯微鏡觀察時,電子束擊中整個銅箔表面整體,結果獲得準確之EBSD資料。 (a) EBSD measurement The roughened copper foil was heated at 180°C for 1 hour, and it was set as a copper foil sample for EBSD measurement. This copper foil sample was fixed using a specific jig so that the surface (henceforth "non-processed surface") on the opposite side to the roughening process surface became the outside. Thereafter, from the non-treated surface of the copper foil sample, plane polishing using a cross-section polisher (CP) was carried out. This plane polishing was carried out under the conditions of an accelerating voltage of 6 kV and an inclination angle of 5°. Then, the surface on the non-treated side of the copper foil sample after plane polishing for 10 minutes (corresponding to a thickness of 500 nm) was set as the outermost surface, and marking and FIB (Focused Ion Beam, Focused Ion Beam) marking processing was performed. In addition, according to the roughness of the copper foil surface, it is also possible to perform planar polishing by changing conditions appropriately to the extent that the following EBSD measurement can be performed. Here, "capable of EBSD measurement" means that the hit rate in EBSD measurement is 70% or more. The hit rate refers to the ratio of the area that can be measured by the electron beam accurately hitting the surface of the sample among the total area of the sample. The hit rate of over 70% means that when using a scanning electron microscope to observe, the electron beam hits the entire copper foil surface as a whole, resulting in accurate EBSD data.

對於平面研磨後之銅箔樣品表面,使用搭載有EBSD檢測器(Oxford Instruments公司製造,Symmetry)之FE(Field Emission,場發射)槍型掃描式電子顯微鏡(卡爾蔡司股份有限公司製造,Crossbeam540)進行觀察。然後,使用EBSD測定軟體(Oxford Instruments公司製造,AZtec5.0 HF1)獲得EBSD資料,將所獲得之EBSD資料轉換成OIM(Orientation Imaging Microscopy,取向成像顯微技術)形式。觀察時之掃描式電子顯微鏡之測定條件如下所示。再者,測定倍率係1000倍及3000倍之中在視野內檢測到之粒子(晶粒)為700個以上之倍率,且選擇儘可能高之倍率。 <掃描式電子顯微鏡測定條件> -加速電壓:15 kV -步幅:0.2 μm(倍率1000倍)或60 nm(倍率3000倍) -區域寬度:90 μm(倍率1000倍)或30 μm(倍率3000倍) -區域高度:78.6 μm(倍率1000倍)或26 μm(倍率3000倍) -掃描相:Cu -試樣角度:70° For the surface of the copper foil sample after plane grinding, use a FE (Field Emission, field emission) gun-type scanning electron microscope (manufactured by Carl Zeiss Co., Ltd., Crossbeam540) equipped with an EBSD detector (manufactured by Oxford Instruments, Symmetry) observe. Then, EBSD data were obtained using EBSD measurement software (manufactured by Oxford Instruments, AZtec5.0 HF1), and the obtained EBSD data were converted into an OIM (Orientation Imaging Microscopy, orientation imaging microscopy) format. The measurement conditions of the scanning electron microscope at the time of observation are as follows. In addition, the measurement magnification is a magnification at which the number of particles (crystal grains) detected in the field of view is 700 or more among 1000 times and 3000 times, and a magnification as high as possible is selected. <Scanning Electron Microscope Measurement Conditions> - Accelerating voltage: 15 kV - Step size: 0.2 μm (magnification 1000 times) or 60 nm (magnification 3000 times) - Area width: 90 μm (magnification 1000 times) or 30 μm (magnification 3000 times) - Area height: 78.6 μm (1000x magnification) or 26 μm (3000x magnification) - Scan phase: Cu - Specimen angle: 70°

對於上述轉換成OIM形式之EBSD資料,使用結晶直徑計算軟體(AMETEK公司製造,OIM Analysis v7.3.1 x64),將方位差5°以上視為晶界,藉此鑑定各個結晶。其中,由於銅之結晶結構為立方晶結構,故而考慮到雙晶界,於屬於下述(i)或(ii)之情形時,不視為晶界。 (i)處於繞<111>軸旋轉60°之方位關係之雙晶界 (ii)處於繞<110>軸旋轉38.9°之方位關係之雙晶界 For the above-mentioned EBSD data converted into OIM format, using the crystal diameter calculation software (manufactured by AMETEK, OIM Analysis v7.3.1 x64), the azimuth difference of 5° or more was regarded as a grain boundary, thereby identifying each crystal. However, since the crystal structure of copper is a cubic crystal structure, considering the twin grain boundary, it is not regarded as a grain boundary in the case of the following (i) or (ii). (i) The twin grain boundary in the azimuth relationship rotated 60° around the <111> axis (ii) The twin grain boundary in the azimuth relationship of rotating 38.9° around the <110> axis

繼而,使用上述結晶直徑計算軟體,以z軸與銅箔樣品之表面垂直之方式設定座標後,輸出以下之資料。 -Average orientation(平均取向度phi(ϕ1)、PHI(Φ)、phi(ϕ2)) -Area of grain(粒子面積S) -Grain circularity(粒子形狀之真圓度R) Then, use the above-mentioned crystal diameter calculation software, set the coordinates so that the z-axis is perpendicular to the surface of the copper foil sample, and output the following data. -Average orientation (average orientation phi(ϕ1), PHI(Φ), phi(ϕ2)) -Area of grain (particle area S) -Grain circularity (the true circularity R of particle shape)

使用所輸出之資料,基於以下之式: [數1]

Figure 02_image001
算出各粒子之晶界長度(周長)L,且基於下述式分別算出各粒子朝向銅箔樣品表面之結晶面之法向量(h,k,l)。 h=sinΦ×sinϕ2 k=-sinΦ×cosϕ2 l=cosΦ Use the output data, based on the following formula: [numeral 1]
Figure 02_image001
The grain boundary length (circumference length) L of each particle was calculated, and the normal vector (h, k, l) of each particle toward the crystal plane of the surface of the copper foil sample was calculated based on the following formula. h=sinΦ×sinϕ2 k=-sinΦ×cosϕ2 l=cosΦ

如下所示計算各粒子之自基準面(u,v,w)偏移之角度。首先,設定成為對象之基準面(u,v,w)。例如,於計算自(111)面偏移之角度之情形時,設定(u,v,w)=(1,1,1)。然後,基於以下之式: [數2]

Figure 02_image003
算出所算出之各粒子之結晶面之法向量(h,k,l)與基準面(u,v,w)之法向量所成之角,獲得自基準面偏移之角度θ。此處,於以此方式計算之θ值為90度以上且未達180度之情形時,採用從180度減去該值所得之值作為最終之θ值。例如,於藉由上述式計算出θ為150度之情形時,採用從180度減去150度所得之30度作為最終之θ值。如此,分別特定出自(111)面偏移之角度為20度以下之粒子、自(100)面偏移之角度為20度以下之粒子、自(010)面偏移之角度為20度以下之粒子、及自(001)面偏移之角度為20度以下之粒子。 Calculate the angle of deviation of each particle from the reference plane (u, v, w) as follows. First, set the target reference plane (u, v, w). For example, when calculating the angle offset from the (111) plane, set (u, v, w)=(1, 1, 1). Then, based on the following formula: [number 2]
Figure 02_image003
Calculate the angle formed by the calculated normal vector (h, k, l) of the crystal plane of each particle and the normal vector of the reference plane (u, v, w) to obtain the angle θ offset from the reference plane. Here, when the θ value calculated in this way is 90 degrees or more and less than 180 degrees, the value obtained by subtracting this value from 180 degrees is adopted as the final θ value. For example, when θ is calculated as 150 degrees by the above formula, 30 degrees obtained by subtracting 150 degrees from 180 degrees is used as the final value of θ. In this way, the particles whose deviation angle from the (111) plane is 20 degrees or less, the particles whose deviation angle from the (100) plane is 20 degrees or less, and the particles whose deviation angle from the (010) plane is 20 degrees or less Particles, and particles whose angle of deviation from the (001) plane is 20 degrees or less.

關於自(111)面偏移之角度為20度以下之各粒子,求出晶界長度(周長)L相對於佔有面積(粒子面積)S之比L/S,算出其平均值。又,算出自(111)面偏移之角度為20度以下之晶粒之合計佔有面積A 1相對於自(100)面偏移之角度為20度以下之晶粒之合計佔有面積A 2、自(010)面偏移之角度為20度以下之晶粒之合計佔有面積A 3、及自(001)面偏移之角度為20度以下之晶粒之合計佔有面積A 4之和(A 2+A 3+A 4)的比A 1/(A 2+A 3+A 4)。結果如表3所示。 For each particle whose angle of deviation from the (111) plane is 20 degrees or less, the ratio L/S of the grain boundary length (circumference length) L to the occupied area (particle area) S was obtained, and the average value was calculated. Also, calculate the total occupied area A 1 of crystal grains whose angle of deviation from the (111) plane is 20 degrees or less relative to the total occupied area A 2 of crystal grains whose angle of deviation from the (100) plane is 20 degrees or less, The sum of the total occupied area A 3 of the crystal grains whose angle of deviation from the (010) plane is 20 degrees or less, and the total occupied area A 4 of the crystal grains whose angle of deviation from the (001) plane is 20 degrees or less (A 2 +A 3 +A 4 ) ratio A 1 /(A 2 +A 3 +A 4 ). The results are shown in Table 3.

(b)雷射顯微鏡測定 藉由使用雷射顯微鏡(奧林巴斯股份有限公司製造,OLS-5000)之表面粗糙度解析,依據ISO25178進行粗化處理銅箔之粗化處理面之測定。此時,如表2所示,將測定倍率設為200倍(物鏡倍率100倍×光學變焦2倍)進行測定。其他具體之測定條件如表2所示。對於所獲得之粗化處理面之表面輪廓,根據表2所示之條件進行解析,算出Sdr及Sk。結果如表3所示。 (b) Measurement by laser microscopy The measurement of the roughened surface of the roughened copper foil was performed based on ISO25178 by surface roughness analysis using a laser microscope (manufactured by Olympus Co., Ltd., OLS-5000). At this time, as shown in Table 2, the measurement was performed at a measurement magnification of 200 times (objective lens magnification of 100 times×optical zoom of 2 times). Other specific measurement conditions are shown in Table 2. The surface profile of the obtained roughened surface was analyzed under the conditions shown in Table 2, and Sdr and Sk were calculated. The results are shown in Table 3.

[表2] 表2 測定條件 雷射顯微鏡型號 奧林巴斯股份有限公司製造,OLS-5000 物鏡倍率 100倍 光學變焦 2倍 觀察方向 銅箔之處理條紋與視野垂直之方向 測定方法 指定複數個區域模式,於晶格登錄模式下,對「矩陣」指定X=2、Y=2,對「間距」指定X=64 μm、Y=64 μm,測定相互鄰接之2×2處區域 (每處64 μm×64 μm) 解析條件 對象面積 縱64.419 μm×橫64.397 μm 標準 ISO25178 平面傾斜修正 藉由「自動」實施 F演算 將形狀去除方法設為「多維曲面」,將維度設為「一維」。 S濾波器 L濾波器 5 μm(於Sdr之情形時)或 無(於Sk之情形時) 平均方法 對同時測得之2×2處之測定值進行平均 [Table 2] Table 2 Measurement conditions Laser Microscope Model Made by Olympus Co., Ltd., OLS-5000 Objective lens magnification 100 times optical zoom 2 times viewing direction Copper foil processing stripes and the direction perpendicular to the field of view test methods Designate multiple area modes, and in lattice registration mode, specify X=2, Y=2 for "matrix", specify X=64 μm, Y=64 μm for "pitch", and measure 2×2 adjacent areas (64 μm×64 μm each) Analytical conditions Object area 64.419 μm in length × 64.397 μm in width standard ISO25178 plane tilt correction Implemented by "automatically" F-calculus Set the Shape Removal Method to Multidimensional Surface and the Dimension to 1D. S filter none L filter 5 μm (in the case of Sdr) or none (in the case of Sk) average method Average the measured values at 2×2 points measured at the same time

(c)傳輸特性 準備高頻用基材(Panasonic製造,MEGTRON6N)作為絕緣樹脂基材。將粗化處理銅箔以粗化處理面與絕緣樹脂基材抵接之方式積層於該絕緣樹脂基材之雙面,使用真空加壓機,於溫度190℃、加壓時間120分鐘之條件下進行熱壓,獲得絕緣厚度136 μm之銅箔積層板。對所獲得之銅箔積層板之一個面實施蝕刻加工,獲得形成有電路之電路基板。對於電路基板之電路,使用以硫酸-過氧化氫作為主成分之蝕刻液實施粗化處理。該粗化處理係藉由如下方式進行,即,將例4中銅之厚度之平均減少量成為1.5 μm之蝕刻條件應用於例1~5之所有例。將上述絕緣樹脂基材積層於粗化處理後之電路基板之電路側之面,使用真空加壓機,於溫度190℃、加壓時間120分鐘之條件下進行熱壓。如此,獲得絕緣厚度之合計(無電路之部分)為254 μm且形成有特性阻抗為50 Ω之帶狀線之傳輸損耗測定用基板。對於所獲得之傳輸損耗測定用基板,使用網路分析器(Keysight Technologie製造,N5225B),測定50 GHz下之傳輸損耗(dB/cm)。根據以下基準對所獲得之傳輸損耗之好壞進行評價。結果如表3所示。 <傳輸損耗評價基準> -良好:傳輸損耗為-0.55 dB/cm以上 -不良:傳輸損耗未達-0.55 dB/cm (c) Transfer characteristics A base material for high frequency (manufactured by Panasonic, MEGTRON 6N) was prepared as an insulating resin base material. The roughened copper foil is laminated on both sides of the insulating resin substrate in such a way that the roughened surface is in contact with the insulating resin substrate. Using a vacuum press, the temperature is 190°C and the pressing time is 120 minutes. Hot pressing was performed to obtain a copper foil laminate with an insulation thickness of 136 μm. One surface of the obtained copper foil laminate was etched to obtain a circuit board on which a circuit was formed. The circuit of the circuit board is roughened using an etchant mainly composed of sulfuric acid-hydrogen peroxide. This roughening process was performed by applying the etching conditions in which the average amount of reduction of the thickness of copper in Example 4 was 1.5 micrometers to all Examples 1-5. The above-mentioned insulating resin base material was laminated on the circuit side surface of the roughened circuit board, and hot-pressed using a vacuum press at a temperature of 190° C. and a pressing time of 120 minutes. In this way, a substrate for measurement of transmission loss having a total insulation thickness (portion without circuits) of 254 μm and a strip line having a characteristic impedance of 50 Ω was obtained. With respect to the obtained substrate for measurement of transmission loss, the transmission loss (dB/cm) at 50 GHz was measured using a network analyzer (manufactured by Keysight Technologies, N5225B). The quality of the obtained transmission loss was evaluated according to the following criteria. The results are shown in Table 3. <Evaluation criteria for transmission loss> - Good: Transmission loss is -0.55 dB/cm or more - Poor: transmission loss does not reach -0.55 dB/cm

[表3] 表3    粗化處理銅箔之參數 性能 粗化處理面 與粗化處理面相反一側之面 傳輸特性 Sdr (%) Sk (μm) L/S平均值 (μm/μm 2) A1/(A2+A3+A4) 50 GHz下之傳輸損耗 (dB/cm) 例1 22.8 1.16 7.1 0.26 -0.55 例2 40.4 1.19 8.2 0.31 -0.54 例3 63.1 1.56 6.2 0.46 -0.55 例4* 21.3 0.97 14.3 0.62 -0.58 例5* 92.3 1.89 7.6 0.35 -0.67 *表示比較例。 [table 3] table 3 Parameters of roughening copper foil performance roughened surface The face on the opposite side from the roughened face transmission characteristics Sdr (%) Sk (μm) Average value of L/S (μm/μm 2 ) A1/(A2+A3+A4) Transmission loss at 50 GHz (dB/cm) example 1 22.8 1.16 7.1 0.26 -0.55 Example 2 40.4 1.19 8.2 0.31 -0.54 Example 3 63.1 1.56 6.2 0.46 -0.55 Example 4* 21.3 0.97 14.3 0.62 -0.58 Example 5* 92.3 1.89 7.6 0.35 -0.67 * indicates a comparative example.

圖1係用於對依據ISO25178所確定之面之負荷曲線及負荷面積率Smr(c)進行說明之圖。 圖2係用於對依據ISO25178所確定之核心部之階層差Sk進行說明之圖。 圖3係用於對粗化處理銅箔之表面凹凸包含粗化粒子分量及起伏分量進行說明之圖。 圖4係表示本發明中之印刷配線板之製造方法之一例之步驟流程圖,係表示初始步驟(步驟(i)~(iii))之圖。 圖5係表示本發明中之印刷配線板之製造方法之一例之步驟流程圖,係表示繼圖4所示之步驟後之後續步驟(步驟(iv)~(v))之圖。 Fig. 1 is a diagram for explaining the load curve and load area ratio Smr(c) of a surface determined in accordance with ISO25178. FIG. 2 is a diagram for explaining the level difference Sk of the core part determined based on ISO25178. Fig. 3 is a diagram for explaining that the surface irregularities of the roughened copper foil include a roughened particle component and a waviness component. Fig. 4 is a flowchart showing an example of the method of manufacturing a printed wiring board in the present invention, and is a diagram showing an initial step (steps (i) to (iii)). Fig. 5 is a flow chart showing an example of the method of manufacturing a printed wiring board in the present invention, and is a diagram showing subsequent steps (steps (iv) to (v)) following the steps shown in Fig. 4 .

Claims (10)

一種粗化處理銅箔,其係在至少一側具有粗化處理面者, 上述粗化處理面依據ISO25178,於倍率200倍、無S濾波器、及於L濾波器5 μm之條件下所測得之界面之展開面積比Sdr為70.0%以下,且 與上述粗化處理面相反一側之面於以180℃加熱1小時後藉由電子束背向散射繞射法(EBSD)進行解析之情形時,於觀察視野中,針對自(111)面偏移之角度為20度以下之各晶粒算出的晶界長度L相對於佔有面積S之比L/S之平均值為13.0 μm/μm 2以下。 A roughened copper foil, which has a roughened surface on at least one side, the above-mentioned roughened surface is measured under the conditions of 200 times magnification, no S filter, and 5 μm L filter according to ISO25178 The developed area ratio Sdr of the obtained interface is 70.0% or less, and the surface opposite to the above-mentioned roughened surface is analyzed by electron beam backscattering diffraction (EBSD) after heating at 180°C for 1 hour , in the observed field of view, the average value of the ratio L/S of the grain boundary length L to the occupied area S calculated for each grain with an angle of deviation from the (111) plane of 20 degrees or less is 13.0 μm/μm 2 the following. 如請求項1之粗化處理銅箔,其中與上述粗化處理面相反一側之面於上述觀察視野中,自上述(111)面偏移之角度為20度以下之晶粒之合計佔有面積A 1相對於自(100)面偏移之角度為20度以下之晶粒之合計佔有面積A 2、自(010)面偏移之角度為20度以下之晶粒之合計佔有面積A 3、及自(001)面偏移之角度為20度以下之晶粒之合計佔有面積A 4之和(A 2+A 3+A 4)的比A 1/(A 2+A 3+A 4)為0.10以上0.60以下。 The roughened copper foil according to claim 1, wherein the surface opposite to the roughened surface is in the observation field of view, and the total occupied area of crystal grains whose angle of deviation from the (111) plane is 20 degrees or less A 1 is relative to the total occupied area A 2 of the crystal grains whose angle of deviation from the (100) plane is 20 degrees or less, the total occupied area A 3 of the crystal grains whose angle of deviation from the (010) plane is 20 degrees or less, And the ratio A 1 /(A 2 +A 3 +A 4 ) of the sum of the total occupied area A 4 (A 2 +A 3 +A 4 ) of crystal grains whose angle of deviation from the (001) plane is 20 degrees or less is 0.10 or more 0.60 the following. 如請求項1或2之粗化處理銅箔,其中上述L/S之平均值為2.0 μm/μm 2以上11.0 μm/μm 2以下。 The roughened copper foil according to claim 1 or 2, wherein the average value of the above-mentioned L/S is not less than 2.0 μm/μm 2 and not more than 11.0 μm/μm 2 . 如請求項1或2之粗化處理銅箔,其中上述粗化處理面依據ISO25178,於倍率200倍、無S濾波器、及無L濾波器之條件下所測得之核心部之階層差Sk為1.70 μm以下。The roughened copper foil according to claim 1 or 2, wherein the above-mentioned roughened surface is based on ISO25178, and the level difference Sk of the core part is measured at a magnification of 200 times, without an S filter, and without an L filter. 1.70 μm or less. 如請求項1或2之粗化處理銅箔,其中上述粗化處理銅箔為電解銅箔,且上述粗化處理面存在於電解銅箔之電極面側。The roughened copper foil according to claim 1 or 2, wherein the roughened copper foil is an electrolytic copper foil, and the roughened surface exists on the electrode side of the electrolytic copper foil. 如請求項1或2之粗化處理銅箔,其中上述粗化處理面具備複數個粗化粒子,且上述粗化粒子包含金屬。The roughened copper foil according to claim 1 or 2, wherein the roughened surface has a plurality of roughened particles, and the roughened particles include metal. 一種銅箔積層板,其係具備樹脂層、及設置於該樹脂層之至少一個表面之粗化處理銅箔者, 上述粗化處理銅箔在至少一側具有粗化處理面,上述粗化處理面與上述樹脂層相接, 上述粗化處理面依據ISO25178,於倍率200倍、無S濾波器、及於L濾波器5 μm之條件下所測得之界面之展開面積比Sdr為70.0%以下,且 上述粗化處理銅箔之與上述粗化處理面相反一側之面於藉由電子束背向散射繞射法(EBSD)進行解析之情形時,於觀察視野中,針對自(111)面偏移之角度為20度以下之各晶粒算出的晶界長度L相對於佔有面積S之比L/S之平均值為13.0 μm/μm 2以下。 A copper foil laminate comprising a resin layer and a roughened copper foil provided on at least one surface of the resin layer, wherein the roughened copper foil has a roughened surface on at least one side, and the roughened The surface is in contact with the above-mentioned resin layer, and the above-mentioned roughened surface is based on ISO25178, and the developed area ratio Sdr of the interface measured under the conditions of 200 times magnification, no S filter, and L filter 5 μm is 70.0% or less , and the surface of the above-mentioned roughened copper foil opposite to the above-mentioned roughened surface is analyzed by the electron beam backscatter diffraction method (EBSD), in the observation field of view, from (111) The average value of the ratio L/S of the calculated grain boundary length L to the occupied area S of each crystal grain whose plane deviation angle is 20 degrees or less is 13.0 μm/μm 2 or less. 如請求項7之銅箔積層板,其中上述粗化處理銅箔之與上述粗化處理面相反一側之面於上述觀察視野中,自上述(111)面偏移之角度為20度以下之晶粒之合計佔有面積A 1相對於自(100)面偏移之角度為20度以下之晶粒之合計佔有面積A 2、自(010)面偏移之角度為20度以下之晶粒之合計佔有面積A 3、及自(001)面偏移之角度為20度以下之晶粒之合計佔有面積A 4之和(A 2+A 3+A 4)的比A 1/(A 2+A 3+A 4)為0.10以上0.60以下。 The copper foil laminated board according to claim 7, wherein the surface of the roughened copper foil opposite to the roughened surface is within the observation field of view, and the angle of deviation from the (111) plane is 20 degrees or less The total occupied area A 1 of crystal grains is relative to the total occupied area A 2 of crystal grains whose angle of deviation from the (100) plane is 20 degrees or less, and the total occupied area of crystal grains whose angle of deviation from the (010) plane is 20 degrees or less The ratio A 1 /(A 2 +A 3 +A ) of the sum of the total occupied area A 3 and the total occupied area A 4 of crystal grains whose angle of deviation from the (001) plane is 20 degrees or less (A 2 + A 3 + A 4 ) 4 ) Not less than 0.10 and not more than 0.60. 一種印刷配線板之製造方法,其包括如下步驟: 準備粗化處理銅箔,上述粗化處理銅箔係在至少一側具有粗化處理面者,上述粗化處理面依據ISO25178,於倍率200倍、無S濾波器、及於L濾波器5 μm之條件下所測得之界面之展開面積比Sdr為70.0%以下; 於樹脂層之至少一個表面將上述粗化處理銅箔以上述粗化處理面與上述樹脂層相接之方式積層,製作銅箔積層板; 對上述銅箔積層板之上述粗化處理銅箔進行加工,形成電路;及 對上述電路進行利用蝕刻之粗化處理;且 進行上述利用蝕刻之粗化處理前之上述電路之表面於藉由電子束背向散射繞射法(EBSD)進行解析之情形時,於觀察視野中,針對自(111)面偏移之角度為20度以下之各晶粒算出的晶界長度L相對於佔有面積S之比L/S之平均值為13.0 μm/μm 2以下。 A method of manufacturing a printed wiring board, which includes the following steps: preparing a roughened copper foil, the roughened copper foil has a roughened surface on at least one side, and the roughened surface is based on ISO25178 at a magnification of 200 times , without S filter, and under the conditions of L filter 5 μm, the expansion area ratio Sdr of the interface measured is 70.0% or less; the above roughened copper foil is treated with the above roughened treatment on at least one surface of the resin layer lamination in such a way as to be in contact with the above-mentioned resin layer to produce a copper foil laminate; processing the above-mentioned roughened copper foil of the above-mentioned copper-clad laminate to form a circuit; and performing roughening treatment on the above-mentioned circuit by etching; and performing When the surface of the above-mentioned circuit before roughening treatment by etching is analyzed by electron beam backscatter diffraction (EBSD), the angle of deviation from the (111) plane is 20 in the observation field of view. The average value of the ratio L/S of the grain boundary length L to the occupied area S calculated for each crystal grain below 13.0 μm/μm 2 is 13.0 μm/μm 2 or less. 如請求項9之印刷配線板之製造方法,其中進行上述利用蝕刻之粗化處理前之上述電路之表面於上述觀察視野中,自上述(111)面偏移之角度為20度以下之晶粒之合計佔有面積A 1相對於自(100)面偏移之角度為20度以下之晶粒之合計佔有面積A 2、自(010)面偏移之角度為20度以下之晶粒之合計佔有面積A 3、及自(001)面偏移之角度為20度以下之晶粒之合計佔有面積A 4之和(A 2+A 3+A 4)的比A 1/(A 2+A 3+A 4)為0.10以上0.60以下。 The method of manufacturing a printed wiring board according to claim 9, wherein the surface of the circuit before the roughening treatment by etching is a crystal grain whose angle of deviation from the (111) plane is 20 degrees or less in the observation field of view The total occupied area A 1 is relative to the total occupied area A 2 of crystal grains whose angle of deviation from (100) plane is less than 20 degrees, and the total occupied area of crystal grains whose angle of deviation from (010) plane is less than 20 degrees The ratio A 1 /(A 2 +A 3 +A 4 ) of the sum (A 2 +A 3 +A 4 ) of the area A 3 and the total occupied area A 4 of the crystal grains whose angle of deviation from the (001) plane is 20 degrees or less It is not less than 0.10 and not more than 0.60.
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