CN107734863A - The pliability copper-clad base plate and its manufacture method of open circuit/short circuit can be prevented - Google Patents
The pliability copper-clad base plate and its manufacture method of open circuit/short circuit can be prevented Download PDFInfo
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- CN107734863A CN107734863A CN201710687127.9A CN201710687127A CN107734863A CN 107734863 A CN107734863 A CN 107734863A CN 201710687127 A CN201710687127 A CN 201710687127A CN 107734863 A CN107734863 A CN 107734863A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
- C25D7/0614—Strips or foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/007—Manufacture or processing of a substrate for a printed circuit board supported by a temporary or sacrificial carrier
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
- H05K3/025—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates by transfer of thin metal foil formed on a temporary carrier, e.g. peel-apart copper
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/384—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0307—Providing micro- or nanometer scale roughness on a metal surface, e.g. by plating of nodules or dendrites
Abstract
The present invention provide it is a kind of by ensure chemical polishing uniformly come prevent open circuit and/or short circuit generation pliability copper-clad base plate and its manufacture method.Pliability copper-clad base plate includes the first layers of copper non-conductive polymer substrate in the first coating and first coating on non-conductive polymer substrate.Wherein, when carrying out chemical polishing so that the thickness of the first layers of copper is reduced into 1 μm to 2 μm, the surface roughness of the first layers of copper of polishing is 0.1 μm to 0.15 μm, and in copper average grain size in normal direction be less than 2 μm.
Description
Technical field
The present invention relates to a kind of pliability copper-clad base plate and its manufacture method, more particularly to one kind can prevent open circuit and/
Or the pliability copper-clad base plate and its manufacture method of short circuit generation.
Background technology
With such as notebook computer, mobile phone, personal digital assistant (personal digital assistant, PDA), small
The electronic equipments such as type video camera, electronic memo become smaller, lighter, and (tape is engaged automatically suitable for coil type
Automated bonding, TAB), the flexible printed circuit of thin-film flip-chip encapsulation (chip-on-film, COF) etc.
The demand of (flexible printed circuit board, FPCB) increases.Therefore, to for manufacturing the flexible of FPCB
The demand of property copper-clad base plate (flexible copper clad laminate, FCCL) is also increasing.
FCCL includes non-conductive polymer film and the stacked structure of layers of copper.Can be by optionally removing copper from FCCL
Layer, circuit pattern is formed on non-conductive polymer film to obtain FPCB.
FCCL can be formed in the following manner：I) copper clad layers are manufactured and by coating or laminating technology shape in copper clad layers
Into non-conductive polymer film, or ii) on non-conductive polymer film deposit copper.Later approach is more favourable than former approach, because
For the very thin layers of copper of thickness can be formed.
The example of the method for circuit pattern is formed using FCCL to be included：I) subraction, relatively thick initial layers of copper is formed
And remove the initial layers of copper beyond circuit line and ii) semi-additive process, the initial layers of copper of relative thin is formed, and corresponding to electricity
Copper coating (hereinafter referred to as " copper pattern coating ") is additionally carried out on the region of the initial layers of copper of route.
Semi-additive process is better than subraction, because the spacing (pitch) of pattern can form smaller.
In semi-additive process, chemical polishing is carried out to reduce the thickness of the layers of copper formed on non-conductive polymer film.
However, when on all surface of layers of copper carry out chemical polishing process in, when polishing velocity is uneven, the one of layers of copper
There is out-of-flatness on a little regions.Out-of-flatness out-of-flatness in layers of copper causes the generation of uneven copper pattern coating.
Due to uneven copper pattern coating, a part for the layers of copper to be removed can part during circuit pattern is formed
Ground retains and can not removed completely, therefore short circuit can occur, or one of the layers of copper to be left during circuit pattern is formed
Branch is removed, therefore can open a way.
Such short circuit or open circuit not only reduce FPCB yield and reliability, also reduce the electronics that FPCB is applied
The yield and reliability of equipment.
The content of the invention
The present invention relates to a kind of limitation that can prevent this area as described above and the pliability copper-clad base plate of shortcoming
And its manufacture method (FCCL).
One aspect of the present invention provides a kind of pliability copper-clad base plate, by ensuring uniformly preventing out for chemical polishing
Road and/or short circuit occur.
Another aspect of the present invention provides a kind of manufacture method of pliability copper-clad base plate, by ensuring the equal of chemical polishing
It is even come prevent open circuit and/or short circuit occur.
The aspects of the invention and further feature and advantage is described below, or comes for those skilled in the art
Say, following description will be understandable.
One aspect of the present invention, there is provided a kind of pliability copper-clad base plate, including a non-conductive polymer substrate, have
One first surface and a second surface relative with the first surface；First on the first surface of non-conductive polymer substrate
Coating；And the first layers of copper in first coating, wherein, when carry out chemical polishing with by the thickness of first layers of copper reduce 1 μm
During to 2 μm, the surface roughness of first layers of copper of polishing is 0.1 μm to 0.15 μm, and is averaged in copper crystal grain in normal direction
Size is less than 2 μm.
Another aspect of the present invention, there is provided a kind of manufacture method of pliability copper-clad base plate, including:One is prepared non-to lead
Electric polymer substrate；A coating is formed at least one surface of non-conductive polymer substrate；By sputter on coating shape
Cheng Yitong kinds crystalline substance (copper seed) layer；And copper plate is formed on copper kind crystal layer, wherein being electroplated to form copper facing with multistage
Layer, by by with the coating and the non-conductive polymer substrate of the copper kind crystal layer thereon pass sequentially through multiple electroplating baths and
Form copper plate.The current density supplied in electroplating bath is 0.5ASD to 3ASD.The maximum of the current density supplied in electroplating bath
Current density is 2.8ASD to 3ASD.The temperature of electroplate liquid in electroplating bath is maintained at 34 DEG C to 36 DEG C.
The above-mentioned general description of the present invention aims to provide embodiments of the invention or the description present invention, therefore the present invention is not
It is limited to this.
Brief description of the drawings
Fig. 1 is the profile of pliability copper-clad base plate (FCCL) according to embodiments of the present invention.
Fig. 2 is the profile of FCCL according to another embodiment of the invention.
Fig. 3 to Fig. 6 is the profile of the manufacture method for the FCCL for representing embodiments of the present invention.
Fig. 7 to Figure 12 is the section of the manufacture method for the flexible printed circuit (FPCB) for illustrating the embodiment of the present invention
Figure.
Figure 13 a and 13b are the measurement results for the backscattering electronics diffractometer (EBSD) for illustrating embodiment 1 and comparative example 1
Photo.
Embodiment
Hereinafter, it will be described in detail with reference to the accompanying drawings the embodiment of the demonstration of the present invention.
In the technological thought and the situation of scope for not departing from the present invention, and for those of ordinary skill in the art to be aobvious and
In the case of being clear to, various modifications and changes can be carried out to the present invention.Therefore, the present invention, which is interpreted as covering, falls into application specially
The all modifications in the scope of the present invention, equipollent and the substitute limited in sharp scope.
Fig. 1 is the profile of the pliability copper-clad base plate (FCCL) 100 of the embodiment of the present invention.
As shown in figure 1, the FCCL100 of the embodiment of the present invention includes having first surface and relative with first surface second
The non-conductive polymer substrate 110 on surface, the first coating 120 on the first surface of non-conductive polymer substrate 110, and
The first layers of copper 130 in first coating 120.
The material of non-conductive polymer substrate 110 may include polyimides, and the thickness of non-conductive polymer substrate 110
It can be 10 μm to 40 μm, allow it to using volume to volume equipment and add FCCL100 pliability characteristic.
First coating 120 is inserted between the layers of copper 130 of non-conductive polymer substrate 110 and first, to improve by different materials
Bonding strength between the formed layers of copper 130 of non-conductive polymer substrate 110 and first of material.The material of first coating 120 can
Including nickel (Ni), chromium (Cr), molybdenum (Mo), niobium (Nb), iron (Fe) and include a two or more mixtures selected from above-mentioned material
Formed.
In one embodiment of the invention, first coating 120 includes nickel alloy.For example, first coating 120 may include nickel
And chromium.The weight content of chromium can be 5wt% to 25wt% in first coating 120.When chromium content not within the range when, can not
Interfacial bond intensity required for ensuring between the non-conductive layers of copper 130 of polymeric substrate 110 and first.
In one embodiment of the invention, the thickness of first coating 120 isExtremelyWhen first coating 120
Thickness be less thanWhen, it is impossible to the interface required for ensuring between the layers of copper 130 of non-conductive polymer substrate 110 and first sticks
Close intensity.When the thickness of first coating 120 is more thanWhen, a part for the first coating 120 that must be etched is being subsequently formed
It can be retained in the operating process of circuit pattern without being etched to.
As shown in figure 1, the first layers of copper 130 may include the first bronze medal kind crystal layer 131 and the first bronze medal kind crystalline substance in first coating 120
The first copper plate 132 on layer 131.
The thickness of first bronze medal kind crystal layer 131 isExtremelyFirst bronze medal kind crystal layer 131 can be formed by sputter.
The first copper plate 132 can be formed by electroplating, the first thickness of coated copper layer is 1.8 μm to 2.4 μm.Enter when using volume to volume equipment
During row plating, the first copper seed layer 131 is taken as electric wire to use.
The FCCL100 of the embodiment of the present invention may additionally include the protective layer (not shown) in the first layers of copper 130.Protective layer is prevented
Only the first layers of copper 130 is oxidized and corroded, and protective layer can be formed by organic material.
The FCCL100 of the embodiment of the present invention can apply to using half addition method manufacture flexible printed circuit
(FPCB).According to half addition method, by plating, the only other shape in the region corresponding to the first layers of copper 130 of circuit line
Into copper pattern layer.Therefore, it is necessary to perform without forming the first of copper pattern layer before additional plated processing as progress
The processing of anti-plated pattern (such as photosensitive pattern) is formed on the region of layers of copper 130.
When the bonding strength deficiency between photosensitive pattern and the first layers of copper 130, photosensitive pattern can be with the first layers of copper 130
Separation completely or partially.When photosensitive pattern and the first layers of copper 130 separate each other, additional plated processing is performed to form fine electricity
Road pattern, now copper pattern layer can be formed in undesired region.
Therefore, in order to improve the bonding strength between photosensitive pattern and the first layers of copper 130, formed in the first layers of copper 130
Before photosensitive pattern, chemical polishing is carried out to the first layers of copper 130.
It is as described above, uneven when carrying out the polishing velocity in chemical polishing process on all surface of the first layers of copper 130
When even, out-of-flatness can occur on some regions of the first layers of copper 130.In the forming process of copper pattern layer, the first layers of copper
Out-of-flatness on 130 causes uneven coating.Due to uneven coating, the one of the circuit pattern layers of copper to be removed is formed
Part can retain without being removed completely, and so as to which short circuit can occur, or a part of layers of copper of formation circuit pattern can be gone
Remove, therefore can open a way.
Therefore, according to an embodiment of the invention, when carry out chemical polishing with by the thickness of the first layers of copper 130 reduce 1 μm to 2
μm when, the surface roughness Rz of the first layers of copper 130 of polishing is 0.1 μm to 0.15 μm, the copper crystal grain in normal direction (ND)
Average-size is less than 2 μm.That is, after the chemical polishing of the first layers of copper 130, in the polished surface of the first layers of copper 130
On out-of-flatness will not occur.Therefore, when using embodiments of the invention FCCL 100 manufacture FPCB when, due to open circuit and/or
Error rate short-circuit and occurring can significantly reduce, so as to improve the yield of product and reliability.
Copper etchant for the first layers of copper of chemical polishing 130 is pure MFE-500 (peroxide 10wt%, sulfuric acid
23wt%, water 67wt%) 20% dilute solution, MFE-500 is manufactured by Poongwon Chemical Co., Ltd, in room
The lower chemical polishing for carrying out the first layers of copper 130 of temperature.
Details are as follows for the reference pictures 2 of FCCL 100 of another embodiment of the present invention.
As shown in Fig. 2 the FCCL 100 of another embodiment of the present invention is additionally included in the second of non-conductive polymer substrate 110
Second coating 120a on surface and the second layers of copper 130a on second coating 120a.
Second coating 120a includes the nickel and chromium similar to first coating 120, but the weight content of chromium can be for 5wt extremely
25wt%, and second coating 120a thickness isExtremely
Second layers of copper 130a is included on the second bronze medal kind crystal layer 131a and the second bronze medal kind crystal layer 131a on second coating 120a
The second copper plate 132a.Thickness, which can be formed, by sputter isExtremelyThe second bronze medal kind crystal layer 131a, Ke Yitong
Cross plating and form the second copper plate 132a that thickness is 1.8 μm to 2.4 μm.
When carrying out chemical polishing so that the second layers of copper 130a thickness is reduced into 1 μm to 2 μm, the second layers of copper 130a surface
Roughness Rz is 0.1 μm to 0.15 μm, and the average-size of copper crystal grain is less than 2 μm in normal direction (ND), similar to first
Layers of copper 130.
The manufacture method of the pliability copper-clad base plate (FCCL) 100 of the present invention is described in detail by reference picture 3 to Fig. 6.
First, as shown in figure 3, preparing non-conductive polymer substrate 110.
The thickness of nonconductive polymers substrate 110 can be 10 μm to 40 μm, the material of nonconductive polymers substrate 110
Can be that thermosetting resin (such as phenolic resin, phenolic resin, allyl resin, epoxy resin etc.), vistanex are (such as poly-
Vinyl, acrylic resin etc.), polyester resin (such as PET, PEN etc.) or polyimides (polyimide) resin.
The material of nonconductive polymers substrate 110 is preferably formed by polyimide resin.For example, it is used as by extruding poly-
The polyamic acid of acid imide presoma forms film, and the subsequently heat-treated film is included with imidizate polyamic acid to manufacture
The non-conductive polymer substrate 110 of polyimides.
In vacuum environment infrared ray (IR) heater can be used to be dried at 50 DEG C to 300 DEG C, to remove
The moisture and residual gas of non-conductive polymer substrate 110.When the temperature of infrared ray (IR) heater is less than 50 DEG C, meeting can not
The moisture in non-conductive polymer substrate 110 is removed completely.It is non-to lead when the temperature of infrared ray (IR) heater is more than 300 DEG C
Electric polymer substrate 110 can be damaged, therefore reduce its quality.
After drying, by corona treatment non-conductive polymer substrate 110, non-conductive gather can be remained in remove
Pollutant on the surface of polymer substrates 110, and the bonding improved between non-conductive polymer substrate 110 and first coating 120 is strong
Degree, wherein first coating 120 is to be formed by surface modification in subsequent operation.
Next, as shown in figure 4, first coating 120 is formed at least one surface of non-conductive polymer substrate 110
On.
Direct current (DC) sputtering unit can be used, forming thickness by sputter isExtremelyFirst coating 120.
When the thickness of first coating 120 is less thanWhen, non-conductive polymer substrate 110 with by first described in subsequent operation
Adhesion strength deficiency between layers of copper 130.When the thickness of first coating 120 is more thanWhen, formed at the etching of circuit pattern
During reason, a part for the first coating 120 to be removed can be left, therefore short circuit can occur.
As described above, the bonding that first coating 120 increases between non-conductive polymer substrate 110 and the first layers of copper 130 is strong
Degree, this by described in subsequent operation, and material may include nickel (Ni), chromium (Cr), molybdenum (Mo), niobium (Nb), iron (Fe) with
And formed comprising a two or more mixtures selected from above-mentioned material.
In one embodiment of the invention, first coating 120 is nickel alloy.For example, first coating 120 may include nickel and
Chromium, and the weight content of chromium can be 5wt% to 25wt% in first coating 120.
The power of sputtering unit is controlled to adjust the density of first coating 120.Can be by controlling the vacuum in chamber
To adjust the oxygen content in first coating 120.
Then, the first layers of copper 130 is formed in first coating 120, the formation of the first layers of copper 130 is included in first coating
The first bronze medal kind crystal layer 131 is formed on 120, as shown in Figure 5.And the first copper plate 132 is formed on the first bronze medal kind crystal layer 131, such as
Shown in Fig. 6.
Thickness, which can be formed, by sputter using DC sputtering units isExtremelyThe first bronze medal kind crystal layer 131.Can
Thickness is formed as 1.8 μm to 2.4 μm of the first copper plate 132 to be electroplated by copper.
The electroplating technology that the embodiment of the present invention forms the first copper plate 132 is described in more detail below.
Carrying out for the multistage plating of the embodiment of the present invention is by that will have the bronze medal kind crystal layer 131 of first coating 120 and first
The non-conductive polymer substrate 110 thereon passes sequentially through 10 to 20 electroplating baths, and each electroplating bath includes the plating of copper
Liquid, electroplate liquid are made up of 30g/L to 40g/L copper, 170g/L to 180g/L sulfuric acid, 45pp μm to 55pp μm of chlorine (Cl).
In order to prevent the first layers of copper 130 from out-of-flatness, the density for the electric current supplied in electroplating bath occurring after chemical polishing
Can be 0.5ASD to 3ASD.Maximum current density in the density for the electric current supplied in electroplating bath can be 2.8ASD to 3ASD.
In one embodiment of the invention, current density can gradually increase according to the order for carrying out multistage plating.
According to one embodiment of the invention, the temperature of contained electroplate liquid is maintained at 34 DEG C to 36 in each electroplating bath
DEG C, to prevent the first layers of copper 130 from out-of-flatness occurring after chemical polishing.
By the way that uneven etching speed is suppressed into bottom line, and the embodiment of the present invention in chemical polishing process
Multistage plating, the first layers of copper 130 can be formed.When carry out chemical polishing with by the thickness of the first layers of copper 130 reduce 1 μm to 2 μm
When, the surface roughness Rz of the first layers of copper 130 of polishing be 0.1 μm to 0.15 μm and in normal direction (ND) copper crystal grain it is flat
Equal size is less than 2 μm.That is, after the chemical polishing of the first layers of copper 130, the surface of the first layers of copper 130 will not occur
Out-of-flatness.Therefore, when manufacturing FPCB using the FCCL 100 of the embodiment of the present invention manufactured as described above, due to open circuit and/
Or error rate short-circuit and occurring can significantly reduce, so as to improve the reliability of yield and product.
Fig. 7 to Figure 12 is refer to, the FPCB of embodiment of the present invention manufacture method is described more fully below.
First, the FCCL 100 of embodiment of the present invention manufactured as described above is prepared.
Next, as shown in figure 8, chemical polishing, the first layers of copper are carried out to the first layers of copper 130 by using copper etchant
The thickness of 130 (more specifically, first copper plates 132) reduces 1 μm to 2 μm.
In one embodiment of the invention, can be plated by spraying copper etchant on the first copper plate 132 to first
Chemical polishing is carried out in layers of copper 132.The chemical polishing of first copper plate 132 can be with 0.03 μm/sec to 0.04 μm/sec speed
Carry out 25 seconds to 30 seconds.
The polishing layers of copper 130' obtained by the first layers of copper of chemical polishing 130 thickness is 0.5 μm to 1.5 μm.Work as polishing
When layers of copper 130' thickness is less than 0.5 μm, polishing layers of copper 130' be able to not can be etched equably, therefore polishing layers of copper 130''s
Out-of-flatness can occur on surface.
Then, as shown in figure 9, forming photosensitive pattern 10 on polishing layers of copper 130'.Photosensitive pattern 10 can be by general
Photoetching process formed.Polishing layers of copper 130' includes the Part I covered by photosensitive pattern 10 and not covered by photosensitive pattern 10
Part II.
Then, circuit pattern is formed using photosensitive pattern 10.The formation circuit pattern of the embodiment of the present invention is described below
Method.
First, as shown in Figure 10, on the Part II surface for the polishing layers of copper 130' not covered by photosensitive pattern 10
Electroplated, to form thickness as 8 μm to 12 μm of copper pattern layer 140.
Next, as shown in figure 11, photosensitive pattern 10 is removed by general cineration technics.
Then, as shown in figure 12, it has been coated with the polishing layers of copper 130' of photosensitive pattern 10 Part I and correspondingly
It is selectively removed in a part for the first coating 120 of Part I, to complete circuit pattern.
Examples and comparative examples of the present invention will be described in more detail below.However, the following examples are intended to
Help understands the present invention, therefore the scope of the present invention not limited to this.
Embodiment 1 to 6 and comparative example 1 to 12
Polyimide film is dried by infrared ray (IR) heater, plasma surface treatment is carried out to polyimide film.
Next, it is by sputter formation thicknessNiCr coatings.Then, forming thickness by sputter isCopper kind it is brilliant
Layer.Then, (as shown in table 1 below) is electroplated at different conditions, forms the copper plate that thickness is 2 μm, thus completes to implement
The FCCL of example 1 to 6 and comparative example 1 to 12.
In table 1 below, maximum current density is understood to mean that the maximum among the current density provided in electroplating bath
Current density.
Table 1
The FCCL manufactured according to these embodiments and comparative example is by spraying copper etchant thereon (by Poongwon
The MFE-500 of Chemical Co., Ltd manufactures 20% dilute solution) chemical polishing is carried out, to control the final thickness of layers of copper
For 0.8 μm (that is, thickness of thickness+copper plate of copper kind crystal layer).Then the surface for measuring or observing the polished surface of layers of copper is thick
Rugosity Rz, the copper average grain size in normal direction (ND) and whether bumps occur.Their measurement or observation result are such as
Shown in table 2 below.
Surface roughness Rz
Using scanning probe microscopy (AFM) and according to JIS B0601：1994 (measurement areas：10 10 μm of μ ms) carry out
Contact-type is evaluated and tested.
Copper average grain size in normal direction
The copper average grain size in normal direction is measured using electron backscattered diffractometer (EBSD).Normal visual field is
300 μm, step-length is 0.5 μm, and analysis area is 25 μm of 25 μ m.Use TSL OIMTMAs analysis (calculating) software.Figure 13 A
It is the photo that shows embodiment 1 and the EBSD results of comparative example 1 respectively with Figure 13 B.
Whether out-of-flatness is occurred
Profile shape (the accelerating potential obtained using the observation of focused ion beam (FIB) equipment：30kV, multiplying power 2000
Times).It is determined that it is due to the projection caused by uneven remaining Cu particles that out-of-flatness, which occurs,.
Table 2
As shown in table 2, when being electroplated to form copper plate, except in maximum current density not in 2.8ASD to 3ASD
In the range of, and electroplating temperature (i.e. the temperature of electroplate liquid) (comparative example 1,25 to 8,12) not in the range of 34 DEG C to 36 DEG C；
And maximum current density is in 2.8ASD~3ASD, but electroplating temperature (i.e. the temperature of electroplate liquid) is not in 34 DEG C to 36 DEG C of scope
When interior (comparative example 3,4,9,10), the surface roughness Rz of layers of copper is more than 0.15 μm.In comparative example 1 to 6 and 8 to 11, normal
The copper average grain size in direction is more than 2 μm.Therefore, in all comparative examples, bumps occur after carrying out chemical polishing.
The present invention can use semi-additive process manufacture FPCB, therefore can realize the circuit pattern of smaller spacing, and can
So that the product error rate as caused by open circuit and/or short circuit to be minimized, so as to improve the yield of product and reliability.
It will be apparent to one skilled in the art that without departing from the spirit or scope of the present invention, can
Various modifications are carried out to the above-mentioned one exemplary embodiment of the present invention.Therefore, as long as these all modifications apply for a patent model appended
Enclose and its equivalent in the range of, the present invention covers these all modifications.
Although having been disclosed for the preferred embodiments of the present invention for illustrative purposes, those skilled in the art will manage
Solution, in the case where not departing from the scope and spirit of the present invention as disclosed in appended claims, can carry out it is various modification,
Addition and replacement.
Claims (10)
1. a kind of pliability copper-clad base plate, including：
One non-conductive polymer substrate, there is a first surface and a second surface relative with the first surface；
One first coating, on the first surface of the non-conductive polymer substrate；And
One first layers of copper, in the first coating,
Wherein, when carrying out chemical polishing so that the thickness of first layers of copper is reduced into 1 μm to 2 μm, first layers of copper of polishing
Surface roughness is 0.1 μm to 0.15 μm, and copper average grain size is less than 2 μm in normal direction.
It is sub- that 2. pliability copper-clad base plate as claimed in claim 1, the wherein material of the non-conductive polymer substrate include polyamides
Amine, and the thickness of the non-conductive polymer substrate is 10 μm to 40 μm.
3. pliability copper-clad base plate as claimed in claim 1, the wherein material of the first coating include nickel (Ni), chromium (Cr),
Molybdenum (μM o), niobium (Nb), iron (Fe) and formed comprising a two or more mixtures selected from above-mentioned material, and this first
The thickness of coating isExtremely
4. pliability copper-clad base plate as claimed in claim 3, the wherein first coating include nickel and chromium, the wherein first coating
The content of middle chromium is 5wt% to 25wt%.
5. pliability copper-clad base plate as claimed in claim 1, wherein first layers of copper include:
One first bronze medal kind crystal layer, on the first layer coating；And
One first copper plate, on the first bronze medal kind crystal layer,
The thickness of wherein the first bronze medal kind crystal layer isExtremely
The thickness of first copper plate is 1.8 μm to 2.4 μm.
6. pliability copper-clad base plate as claimed in claim 1, is further included:
One second coating, on the second surface of the non-conductive polymer substrate；And
One second layers of copper, in the second coating,
Wherein, when carrying out chemical polishing so that the thickness of second layers of copper is reduced into 1 μm to 2 μm, second layers of copper of polishing
Surface roughness be 0.1 μm to 0.15 μm, and in copper average grain size in normal direction be less than 2 μm.
7. a kind of manufacture method of pliability copper-clad base plate, including:
Prepare a non-conductive polymer substrate；
A coating is formed at least one surface of the non-conductive polymer substrate；
One bronze medal kind crystal layer is formed on the coating layer with sputtering way；And
A copper plate is formed on the copper kind crystal layer,
Wherein electroplated to form the copper plate with multistage, the copper plate be by with the coating and the copper kind crystal layer thereon should
Non-conductive polymer substrate passes sequentially through multiple electroplating baths and formed,
And the current density supplied in those electroplating baths is 0.5ASD to 3ASD,
The maximum current density of the current density supplied in those electroplating baths is 2.8ASD to 3ASD,
And the temperature of the electroplate liquid in those electroplating baths is maintained at 34 DEG C to 36 DEG C.
8. the manufacture method of pliability copper-clad base plate as claimed in claim 7, also include before the coating is formed:
Moisture removal and residual gas are removed from non-conductive polymer substrate；And
With at least one surface of corona treatment non-conductive polymer substrate,
Wherein, the coating is formed with sputter, the material of the coating by nickel (Ni), chromium (Cr), molybdenum (Mo), niobium (Nb), iron (Fe) with
And formed comprising a two or more mixtures selected from above-mentioned material, the thickness of the coating isExtremely
9. the manufacture method of pliability copper-clad base plate as claimed in claim 8, the wherein coating include nickel and chromium, in the coating
The content of chromium is 5wt% to 25wt%.
10. the manufacture method of pliability copper-clad base plate as claimed in claim 7, wherein current density are electroplated according to multistage is performed
Order gradually increase；And
Often the electroplate liquid of the electroplating bath includes 30g/L to 40g/L copper, 170g/L to 180g/L sulfuric acid and 45pp μm to 55pp
μm chlorine.
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|---|---|---|---|
| KR10-2016-0102489 | 2016-08-11 | ||
| KR1020160102489A KR102502200B1 (en) | 2016-08-11 | 2016-08-11 | Flexible Copper Clad Laminate Capable of Preventing Open/Short Circuit and Method for Manufacturing The Same |
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| Publication Number | Publication Date |
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| CN107734863A true CN107734863A (en) | 2018-02-23 |
| CN107734863B CN107734863B (en) | 2020-11-03 |
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| CN201710687127.9A Active CN107734863B (en) | 2016-08-11 | 2017-08-11 | Flexible copper-clad substrate capable of preventing open/short circuit and manufacturing method thereof |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2018026546A (en) |
| KR (1) | KR102502200B1 (en) |
| CN (1) | CN107734863B (en) |
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Cited By (4)
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| CN112368416A (en) * | 2018-07-02 | 2021-02-12 | 东丽尖端素材株式会社 | Flexible copper clad laminate and preparation method thereof |
| CN112513328A (en) * | 2019-05-08 | 2021-03-16 | 东丽尖端素材株式会社 | Laminated structure, flexible copper clad laminate film comprising the laminated structure, and method of manufacturing the laminated structure |
| TWI741572B (en) * | 2020-04-24 | 2021-10-01 | 大陸商宏啟勝精密電子（秦皇島）有限公司 | Circuit board and method for making same |
| CN113529140A (en) * | 2021-07-30 | 2021-10-22 | 福建清景铜箔有限公司 | Novel electrolytic copper foil production method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113068313A (en) * | 2021-03-05 | 2021-07-02 | 江西展耀微电子有限公司 | Manufacturing method of circuit board, circuit board manufactured by manufacturing method and electronic equipment |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2018026546A (en) | 2018-02-15 |
| KR20180017919A (en) | 2018-02-21 |
| CN107734863B (en) | 2020-11-03 |
| TW201806454A (en) | 2018-02-16 |
| KR102502200B1 (en) | 2023-02-20 |
| TWI645748B (en) | 2018-12-21 |
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