JP2018026546A - Soft copper foil laminate film and manufacturing method therefor, capable of preventing circuit disconnection/short circuit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a soft copper foil laminate film and manufacturing method therefor, capable of preventing circuit disconnection and/or short-circuit by guaranteeing uniform chemical polishing.SOLUTION: A soft copper foil laminate film 100 includes a non-conductive polymer base material 110, a tie coat layer 120 on the non-conductive polymer base material and a copper layer 130 on the tie coat layer. When performing chemical polishing for decreasing the thickness of the copper layer by 1-2 μm, the polished copper layer has a surface roughness (Rz) of 0.1-0.15 μm and average copper crystal grains each of which has a size of not more than 2 μm in ND direction.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a flexible copper foil laminated film and a method for producing the same, and more specifically, to a flexible copper foil laminated film capable of preventing circuit disconnection and / or short circuit and a method for producing the same.

  Flexible printing that can be applied to TAB (Tape Automated Bonding), COF (Chip On Film), etc. as electronic devices such as notebook computers, mobile phones, PDAs, small video cameras and electronic notebooks become smaller and lighter. The demand for circuit boards (Flexible Printed Circuit Board: FPCB) is increasing. Accordingly, demand for flexible copper clad laminate (FCCL) used for FPCB production is also increasing.

  The flexible copper foil laminated film is a laminate of a non-conductive polymer film and a copper layer, and a predetermined circuit pattern is formed on the non-conductive polymer film by selectively removing the copper layer of the flexible copper foil laminated film. By forming a flexible printed circuit board can be obtained.

  The flexible copper foil laminated film is formed by i) forming a copper foil and then forming a nonconductive polymer film on the copper foil through a coating or laminating process, or ii) forming a copper on the nonconductive polymer film. Can be formed by vapor deposition. The latter manufacturing method is advantageous over the former manufacturing method in that a very thin copper layer can be formed.

  As a method of forming a circuit pattern using the soft copper foil laminated film, i) a subtractive method of removing a remaining portion other than the circuit wiring after forming a relatively thick initial copper layer. And ii) a semi-additive method in which a relatively thin initial copper layer is formed and then copper plating (hereinafter referred to as “copper pattern plating”) is further performed on a region corresponding to the circuit wiring. There is.

  The semi-additive method is preferred over the subtractive method in that a narrower pitch can be realized.

  In the semi-additive method, it is necessary to perform a chemical polishing process for reducing the thickness of the copper layer formed on the non-conductive polymer film.

  However, since the polishing rate is not uniform over the entire surface of the copper layer when the chemical polishing process is performed, there is a problem that unevenness is formed on the surface of the copper layer in a partial region of the copper layer. Irregularities formed on the surface of the copper layer induce non-uniform copper pattern plating.

  Due to such non-uniformity of the copper pattern plating, a portion of the copper layer that should be removed at the time of forming the circuit pattern is not completely removed and a part of the copper layer remains, thereby causing a short circuit of the circuit or the circuit pattern. The disconnection of the circuit is caused by removing the copper layer portion that should remain at the time of formation.

  Such a short circuit or disconnection of the circuit reduces the yield and reliability of the electronic device to which the flexible printed circuit board (FPCB) itself is applied as well as the flexible printed circuit board (FPCB) itself.

  Therefore, the present invention relates to a flexible copper foil laminated film that can prevent the problems caused by the limitations and disadvantages of the related art as described above and a method for producing the same.

  One aspect of the present invention is to provide a flexible copper foil laminated film that can prevent disconnection and / or short circuit of a circuit by ensuring uniform chemical polishing.

  Another aspect of the present invention is to provide a method for producing a flexible copper foil laminated film capable of preventing circuit disconnection and / or short circuit by ensuring uniform chemical polishing.

  In addition to the aspects of the present invention referred to above, other features and advantages of the present invention are described below, or from such descriptions, to those of ordinary skill in the art to which the present invention belongs. It will be clearly understood.

  According to one aspect of the present invention as described above, a nonconductive polymer substrate having a first surface and a second surface opposite thereto; the first surface of the nonconductive polymer substrate; A chemical polishing that includes a first tiecoat layer on the top; and a first copper layer on the first tiecoat layer, but reduces the thickness of the first copper layer by 1 to 2 μm. When the first copper layer is performed, the polished first copper layer has a surface roughness (Rz) of 0.1 to 0.15 μm and an average size of copper grains in the ND (Normal Direction) direction of 2 μm or less. A flexible copper foil laminated film is provided.

  According to another aspect of the present invention, providing a nonconductive polymer substrate; forming a tie coat layer on at least one surface of the nonconductive polymer substrate; and forming a tie coat layer on the tie coat layer through a sputtering process. Forming a copper seed layer; and forming a copper plating layer on the copper seed layer, wherein a plurality of the non-conductive polymer base material on which the tie coat layer and the copper seed layer are formed are provided. The copper plating layer is formed through multi-stage electroplating, and the current density applied from each of the plating baths is 0.5 to 3 ASD, and is applied from the plating bath. Among the current densities, the maximum current density is 2.8-3 ASD, and the temperature of the electrolyte in the plating tank is 34- There is provided a method for producing a flexible copper foil laminated film, which is maintained at 36 ° C.

  The above general description of the present invention is only intended to illustrate or explain the present invention and does not limit the scope of the present invention.

  According to the present invention, by manufacturing a flexible printed circuit board through a semi-additive method, not only a circuit pattern with a narrower pitch can be realized, but also the defect rate of a product due to circuit disconnection and / or short circuit is minimized. Therefore, the productivity and reliability of the product can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings are included to assist in understanding and constitute a part of this specification, illustrate embodiments of the invention, and explain the principles of the invention together with a detailed description of the invention. To do.
It is sectional drawing of the flexible copper foil laminated film which concerns on one Example of this invention. It is sectional drawing of the flexible copper foil laminated film by the other Example of this invention. It is sectional drawing which shows the manufacturing method of the flexible copper foil laminated film which concerns on one Example of this invention. It is sectional drawing which shows the manufacturing method of the flexible copper foil laminated film which concerns on one Example of this invention. It is sectional drawing which shows the manufacturing method of the flexible copper foil laminated film which concerns on one Example of this invention. It is sectional drawing which shows the manufacturing method of the flexible copper foil laminated film which concerns on one Example of this invention. It is sectional drawing which shows the manufacturing method of the flexible printed circuit board based on one Example of this invention. It is sectional drawing which shows the manufacturing method of the flexible printed circuit board based on one Example of this invention. It is sectional drawing which shows the manufacturing method of the flexible printed circuit board based on one Example of this invention. It is sectional drawing which shows the manufacturing method of the flexible printed circuit board based on one Example of this invention. It is sectional drawing which shows the manufacturing method of the flexible printed circuit board based on one Example of this invention. It is sectional drawing which shows the manufacturing method of the flexible printed circuit board based on one Example of this invention. It is a photograph which shows the EBSD measurement result of Example 1 and Comparative Example 1, respectively. It is a photograph which shows the EBSD measurement result of Example 1 and Comparative Example 1, respectively.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

  It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Accordingly, this invention includes all modifications and variations that fall within the scope of the claimed invention and its equivalents.

  FIG. 1 is a cross-sectional view of a flexible copper foil laminated film according to an embodiment of the present invention.

  As illustrated in FIG. 1, the flexible copper foil laminated film 100 of the present invention includes a nonconductive polymer substrate 110 having a first surface and a second surface opposite to the first surface, the nonconductive polymer substrate 110. A first tie coat layer 120 on the first surface of the polymer substrate 110 and a first copper layer 130 on the first tie coat layer 120 are included.

  The non-conductive polymer substrate 110 may include polyimide and may be used in a roll-to-roll apparatus, and may be 10 to 40 μm to impart flexibility to the flexible copper foil laminate film 100. Can have a thickness of

  The first tie coat layer 120 is interposed between the non-conductive polymer substrate 110 made of different materials and the first copper layer 130 in order to improve the adhesion between them. Nickel (Ni), chromium (Cr), molybdenum (Mo), niobium (Nb), iron (Fe), or a mixture of two or more thereof may be included.

  According to an embodiment of the present invention, the first tie coat layer 120 is a nickel alloy. For example, the first tie coat layer 120 may include nickel and chromium, and the chromium content in the first tie coat layer 120 may be 5 to 25 wt%. If the chromium content is out of the above range, a desired interfacial adhesive force cannot be secured between the non-conductive polymer substrate 110 and the first copper layer 130.

  According to an embodiment of the present invention, the first tie coat layer 120 has a thickness of 150 to 300 mm. If the thickness is less than 150 mm, a desired interfacial adhesive force cannot be secured between the non-conductive polymer substrate 110 and the first copper layer 130, and if the thickness exceeds 300 mm, a subsequent circuit pattern is obtained. There is a greater risk that the portion to be etched at the time of forming will remain without being etched.

  As illustrated in FIG. 1, the first copper layer 130 includes a first copper seed layer 131 on the first tie coat layer 120 and a first copper plating layer 132 on the first copper seed layer 131. Can do.

  The first copper seed layer 131 may be formed to have a thickness of 500-1500 through a sputtering process, and the first copper plating layer 132 may have a thickness of 1.8-2.4 μm through an electrolytic plating process. Can be formed. The first copper seed layer 131 functions as electrical wiring when performing an electrolytic plating process using a roll-to-roll apparatus.

  The flexible copper foil laminated film 100 of the present invention may further include a protective layer (not shown) on the first copper layer 130. The protective layer is for preventing oxidation and corrosion of the first copper layer 130 and may be formed of an organic material.

  The flexible copper foil laminated film 100 of the present invention is for application to the production of a flexible printed circuit board by a semi-additive method. According to the semi-additive method, a copper pattern layer is additionally formed through electrolytic plating only on a region corresponding to the circuit wiring in the first copper layer 130. Therefore, before performing such an additional plating process, a process for forming a pattern for preventing plating, for example, a photosensitive pattern, is required on a region where the copper pattern layer should not be formed.

  If the adhesive force between the photosensitive pattern and the first copper layer 130 is insufficient, there is a risk that the photosensitive pattern may be peeled from the first copper layer 130 in whole or in part. The peeling of the photosensitive pattern and the first copper layer 130 causes a copper pattern layer to be formed at an undesired place when performing the additional plating process for forming a fine circuit pattern.

  Therefore, in order to improve the adhesive force between the photosensitive pattern and the first copper layer 130, the chemistry of the first copper layer 130 is formed before the photosensitive pattern is formed on the first copper layer 130. Perform mechanical polishing.

  As described above, when the chemical polishing process is performed, the polishing rate is not uniform over the entire surface of the first copper layer 130, so that a problem occurs that unevenness is formed in a part of the first copper layer 130. To do. The unevenness formed on the surface of the first copper layer 130 induces non-uniformity of the electrolytic plating for forming the copper pattern layer. Due to such non-uniform electroplating, the copper layer portion that must be removed during the formation of the circuit pattern is not completely removed and a part of the copper layer remains, thereby causing a short circuit of the circuit or formation of the circuit pattern. The disconnection of the circuit is caused by the removal of portions of the copper layer that should sometimes remain.

  Therefore, according to the present invention, when performing chemical polishing to reduce the thickness of the first copper layer 130 by 1 to 2 μm, the polished first copper layer 130 has a surface of 0.1 to 0.15 μm. It has a roughness (Rz) and an average size of copper crystal grains in the ND (Normal Direction) direction of 2 μm or less. That is, there is no unevenness on the surface of the first copper layer 130 that has been polished after chemical polishing. Therefore, when a flexible circuit board is manufactured using the flexible copper foil laminated film 100 of the present invention, defects due to circuit disconnection and / or short-circuiting can be significantly reduced, and as a result, product productivity and reliability are improved. Can be made.

  The copper etchant used for the chemical polishing of the first copper layer 130 is 20% of Pungwon Chemical's MFE-500 (hydrogen peroxide 10 wt%, sulfuric acid 23 wt%, water 67 wt%). The chemical polishing is performed at room temperature.

  Below, with reference to FIG. 2, the flexible copper foil laminated film 100 which concerns on the other Example of this invention is demonstrated.

  As illustrated in FIG. 2, the flexible copper foil laminated film 100 according to another embodiment of the present invention includes a second tie coat layer 120a on the second surface of the non-conductive polymer substrate 110 and the second tie coat layer 120a. A second copper layer 130a on the tie coat layer 120a is further included.

  Similar to the first tie coat layer 120, the second tie coat layer 120a also includes nickel and chromium, but the chromium content may be 5 to 25% by weight and has a thickness of 150 to 300%. Can do.

  The second copper layer 130a includes a second copper seed layer 131a on the second tie coat layer 120a and a second copper plating layer 132a on the second copper seed layer 131a. The second copper seed layer 131a may be formed to have a thickness of 500-1500 through a sputtering process, and the second copper plating layer 132a may have a thickness of 1.8-2.4 μm through an electrolytic plating process. It can be formed to have.

  Similar to the first copper layer 130, when performing chemical polishing for reducing the thickness of the second copper layer 130 a by 1 to 2 μm, the polished second copper layer 130 a is also 0.1 to 0.15 μm. Surface roughness (Rz) and an average size of copper crystal grains in the ND direction of 2 μm or less.

  Below, with reference to FIGS. 3-6, the manufacturing method of the flexible copper foil laminated film 100 which concerns on one Example of this invention is demonstrated concretely.

  First, as illustrated in FIG. 3, a nonconductive polymer substrate 110 is prepared.

  The non-conductive polymer substrate 110 may have a thickness of 10 to 40 μm, and may be a thermosetting resin (eg, phenol resin, phenol aldehyde resin, allyl resin, epoxy resin, etc.), polyolefin resin (eg, polyethylene). Resin, polypropylene resin, etc.), polyester resin (eg, PET, PEN, etc.), or polyimide resin.

  Preferably, the non-conductive polymer substrate 110 is formed of a polyimide resin. For example, a non-conductive polymer substrate 110 containing polyimide is manufactured by extruding a polyamic acid that is a polyimide precursor to produce a film, and heat-treating the film for imidization of the polyamic acid. Can do.

  A drying process for removing moisture and residual gas from the non-conductive polymer substrate 110 may be performed at 50 to 300 ° C. using an infrared (IR) heater in a vacuum atmosphere. If the temperature of the infrared (IR) heater is less than 50 ° C., moisture cannot be removed properly, and if the temperature of the infrared (IR) heater exceeds 300 ° C., the non-conductive polymer substrate 110 is damaged and the quality is increased. A decline is caused.

  In order to remove contaminants that may be present on the surface of the non-conductive polymer substrate 110 after the drying step and improve adhesion with the tie coat layer 120 formed in a subsequent process through surface modification. The non-conductive polymer substrate 110 may be treated with plasma.

  Subsequently, as illustrated in FIG. 4, a tie coat layer 120 is formed on at least one surface of the non-conductive polymer substrate 110.

  The tie coat layer 120 may be formed to have a thickness of 150 to 300 mm through a sputtering process using a DC sputtering apparatus. When the thickness of the tie coat layer 120 is less than 150 mm, the adhesive force between the non-conductive polymer substrate 110 and the copper layer 130 formed in a subsequent process becomes insufficient. On the other hand, when the thickness of the tie coat layer 120 exceeds 300 mm, a part of the tie coat layer 120 that must be removed remains when the etching process for forming the circuit pattern is performed. The risk of inducing a short circuit is increased.

  As described above, the tie coat layer 120 is for increasing the adhesion between the non-conductive polymer substrate 110 and the copper layer 130 formed in a subsequent process, and includes nickel (Ni) and chromium (Cr). , Molybdenum (Mo), niobium (Nb), iron (Fe), or a mixture of two or more thereof.

  According to an embodiment of the present invention, the tie coat layer 120 is a nickel alloy. For example, the tie coat layer 120 may include nickel and chromium, and the chromium content in the tie coat layer 120 may be 5 to 25 wt%.

  The density of the tie coat layer 120 may be adjusted through power adjustment of the sputtering apparatus, and the oxygen content of the tie coat layer 120 may be adjusted by adjusting the degree of vacuum in the chamber.

  Subsequently, a copper layer 130 is formed on the tie coat layer 120. The step of forming the copper layer 130 includes forming a copper seed layer 131 on the tie coat layer 120 as illustrated in FIG. 5 and copper plating on the copper seed layer 131 as illustrated in FIG. Forming a layer 132;

  The copper seed layer 131 may be formed to have a thickness of 500 to 1,500 mm through a sputtering process using a DC sputtering apparatus, and the copper plating layer 132 may have a thickness of 1.8 to 2.4 μm through an electrolytic plating process. It can be formed to have a thickness.

  Hereinafter, the electrolytic plating process of the present invention for forming the copper plating layer 132 will be described in more detail.

  The non-conductive polymer substrate 110 on which the tie coat layer 120 and the copper seed layer 131 are formed includes 30 to 40 g / L copper, 170 to 180 g / L sulfuric acid, and 45 to 55 ppm Cl. The multistage electrolytic plating of the present invention is performed by sequentially passing through 10 to 20 plating tanks in which an electrolytic solution is placed.

  In order to prevent unevenness after the copper layer 130 is chemically polished, the current density applied from each of the plating tanks is 0.5 to 3 ASD, and the maximum current density among the current densities applied from the plating tanks. Is 2.8-3 ASD.

  According to an exemplary embodiment of the present invention, the current density may be increased for each step according to the order in which the stepwise electrolytic plating is performed.

  According to the present invention, after chemical polishing of the copper layer 130, the temperature of the electrolyte in the plating tank is maintained at 34 to 36 ° C. in order to prevent unevenness.

  Through such stepwise electrolytic plating of the present invention, the copper layer 130 that can suppress the non-uniformity of the etching rate during chemical polishing to the maximum can be manufactured. In addition, when performing chemical polishing for reducing the thickness of the copper layer 130 by 1 to 2 μm, the polished copper layer 130 has a surface roughness (Rz) of 0.1 to 0.15 μm and an ND of 2 μm or less. It has a copper crystal grain average size in the direction. That is, there are no irregularities on the surface of the copper layer 130 that has been polished after chemical polishing. Accordingly, when a flexible circuit board is manufactured using the flexible copper foil laminated film 100 of the present invention manufactured as described above, defects due to circuit disconnection and / or short-circuiting can be remarkably reduced. Productivity and reliability can be improved.

  Hereinafter, a method for manufacturing a flexible printed circuit board according to an embodiment of the present invention will be described in detail with reference to FIGS.

  First, the flexible copper foil laminated film 100 of this invention manufactured as mentioned above is prepared.

  Subsequently, as illustrated in FIG. 8, the thickness of the copper layer 130 is reduced by chemically polishing the copper layer 130 [more precisely, the copper plating layer 132] using a copper etching solution. Decrease by 1-2 μm.

  According to an embodiment of the present invention, the chemical polishing of the copper plating layer 132 is performed by spraying a copper etching solution, but 25 to 25 at an etching rate of 0.03 to 0.04 μm / sec. Can be performed for 30 seconds.

  The polished copper layer 130 'may have a thickness of 0.5 to 1.5 [mu] m. If the polished copper layer 130 ′ has a thickness of less than 0.5 μm, there is a risk that irregularities are formed on the polished surface due to non-uniform etching.

  Subsequently, as illustrated in FIG. 9, a photosensitive pattern 10 is formed on the polished copper layer 130 ′. The photosensitive pattern 10 may be performed through a normal photolithography process. The polished copper layer 130 ′ includes a first portion covered with the photosensitive pattern 10 and a second portion not covered with the photosensitive pattern 10.

  Subsequently, a circuit pattern is formed using the photosensitive pattern. Hereinafter, a circuit pattern forming method according to an embodiment of the present invention will be described.

  First, as illustrated in FIG. 10, by performing electrolytic plating, a thickness of 8 to 12 μm is formed on the surface of the second portion of the polished copper layer 130 ′ not covered with the photosensitive pattern 10. The copper pattern layer 140 is formed.

  Subsequently, as illustrated in FIG. 11, the photosensitive pattern 10 is removed through a normal ashing process.

  Subsequently, as illustrated in FIG. 12, a circuit is formed by selectively removing the first portion of the polished copper layer 130 ′ and the corresponding tie coat layer 120 portion covered by the photosensitive pattern 10. Complete the pattern.

  Hereinafter, the present invention will be described in detail through examples and comparative examples. However, the following examples are only for helping understanding of the present invention, and the scope of rights of the present invention is not limited to these examples.

Examples 1-6 and Comparative Examples 1-12
The polyimide film was dried with an infrared (IR) heater and then subjected to plasma surface treatment. Subsequently, a NiCr tie coat layer having a thickness of 200 mm was formed through a sputtering process. Subsequently, a copper seed layer having a thickness of 700 mm was formed through a sputtering process. Subsequently, by performing electrolytic plating under the different conditions shown in Table 1 to form a copper plating layer having a thickness of 2 μm, the flexible copper foil laminated films of Examples 1 to 6 and Comparative Examples 1 to 12 were formed. completed.

  The maximum current density in Table 1 means the maximum value among the current density values added from the plating tank.

  The final thickness of the copper layer is achieved by performing chemical polishing by spraying a copper etching solution (Pungwon Chemical MFE-500, diluted 20%) onto the soft copper foil laminated film manufactured according to the above-described examples and comparative examples. (Ie, the thickness of the copper seed layer + the thickness of the copper plating layer) is 0.8 μm, and then the surface roughness (Rz) of the polished surface of the copper layer and the copper crystal grains in the ND direction The average size and the presence or absence of unevenness were measured or observed, and the results are shown in Table 2 below.

* Surface roughness (Rz)
Contact type evaluation (measurement area: 10 μm × 10 μm) was performed according to the standard JIS B0601: 1994 using AFM (Atomic Force Microscope).

* Average size of copper crystal grains in the ND direction The average size of copper crystal grains in the ND direction was measured using an EBSD (Electron Backscatter Diffraction) apparatus. The analysis area was 25 μm × 25 μm. OSLTM from TSL was used as interpretation (calculation) software. 13a and 13b are photographs showing the EBSD measurement results of Example 1 and Comparative Example 1, respectively.

* Presence / absence of irregularities Observation of the cross-sectional shape obtained using an FIB (Focused Ion Beam) device (acceleration voltage: 30 kV, magnification: 2000 times), and irregularities occur when there are protrusions due to uneven residue of Cu particles. It was considered that.

  As can be seen from Table 2, when performing electroplating for forming a copper plating layer, the maximum current density deviates from 2.8 to 3 ASD, and the plating temperature (that is, the temperature of the electrolyte) is from 34 to 36 ° C. Of course, in the case of deviating (Comparative Examples 1, 2, 5-8, 12), even when the maximum current density is 2.8-3 ASD, the plating temperature (ie, the temperature of the electrolyte) deviates from 34-36 ° C. In Comparative Examples 3, 4, 9, and 10), the surface roughness (Rz) of the copper layer exceeded 0.15 μm. In Comparative Examples 1-6 and 8-11, the average size of the copper crystal grains in the ND direction exceeded 2 μm. As a result, unevenness occurred after chemical polishing in all the comparative examples.

DESCRIPTION OF SYMBOLS 100: Soft copper foil laminated film 110: Nonelectroconductive polymer base material 120: Tie coat layer 130: Copper layer 131: Copper seed layer 132: Copper plating layer 140: Copper pattern layer

Claims (10)

A non-conductive polymer substrate having a first side and a second side opposite thereto,
A first tie coat layer on the first surface of the non-conductive polymer substrate; and a first copper layer on the first tie coat layer;
When performing chemical polishing to reduce the thickness of the first copper layer by 1 to 2 μm, the polished first copper layer has a surface roughness (Rz) of 0.1 to 0.15 μm and an ND of 2 μm or less. A soft copper foil laminated film having an average size of copper crystal grains in the (Normal Direction) direction.   The flexible copper foil laminated film according to claim 1, wherein the non-conductive polymer substrate includes polyimide and has a thickness of 10 to 40 μm.   The first tie coat layer includes nickel (Ni), chromium (Cr), molybdenum (Mo), niobium (Nb), iron (Fe), or a mixture of two or more thereof, and has a thickness of 150 to 300 mm. The flexible copper foil laminated film according to claim 1, wherein The first tie coat layer includes nickel and chromium;
The soft copper foil laminate film according to claim 3, wherein the chromium content in the first tie coat layer is 5 to 25 wt%. The first copper layer is
A first copper seed layer on the first tie coat layer;
Including a first copper plating layer on the first copper seed layer;
The first copper seed layer has a thickness of 500 to 1,500 mm,
The flexible copper foil laminated film according to claim 1, wherein the first copper plating layer has a thickness of 1.8 to 2.4 μm. A second tie coat layer on the second surface of the non-conductive polymer substrate; and a second copper layer on the second tie coat layer;
When performing chemical polishing for reducing the thickness of the second copper layer by 1 to 2 μm, the polished second copper layer has a surface roughness (Rz) of 0.1 to 0.15 μm and an ND of 2 μm or less. The flexible copper foil laminated film according to claim 1, which has an average size of copper crystal grains in a direction. Providing a non-conductive polymer substrate;
Forming a tie coat layer on at least one surface of the non-conductive polymer substrate;
Forming a copper seed layer on the tie coat layer through a sputtering process; and forming a copper plating layer on the copper seed layer;
The copper plating layer is formed through stepwise electrolytic plating in which the non-conductive polymer substrate on which the tie coat layer and the copper seed layer are formed is sequentially passed through a plurality of plating tanks.
The current density applied from each of the plating tanks is 0.5-3 ASD,
Of the current densities applied from the plating tank, the maximum current density is 2.8-3 ASD,
The method for producing a flexible copper foil laminated film, wherein the temperature of the electrolytic solution in the plating tank is maintained at 34 to 36 ° C. In the manufacturing method, before forming the tie coat layer,
Removing water and residual gas from the non-conductive polymer substrate, and subsequently treating at least one surface of the non-conductive polymer substrate with plasma,
The tie coat layer is formed through a sputtering process, and includes nickel (Ni), chromium (Cr), molybdenum (Mo), niobium (Nb), iron (Fe), or a mixture of two or more thereof. It has thickness, The manufacturing method of the flexible copper foil laminated | multilayer film of Claim 7 characterized by the above-mentioned. The tie coat layer includes nickel and chromium;
The method for producing a flexible copper foil laminated film according to claim 8, wherein the chromium content in the tie coat layer is 5 to 25 wt%. The current density is increased for each step according to the order performed when performing the stepwise electrolytic plating,
8. The flexible copper foil laminate according to claim 7, wherein each of the electrolytes in the plating tank contains 30 to 40 g / L of copper, 170 to 180 g / L of sulfuric acid, and 45 to 55 ppm of Cl. 9. A method for producing a film.