KR20180017919A - Flexible Copper Clad Laminate Capable of Preventing Open/Short Circuit and Method for Manufacturing The Same - Google Patents

Abstract

Disclosed is a flexible copper-clad laminate capable of preventing open and/or short circuit by ensuring uniform chemical polishing, and a method for manufacturing the same. The flexible copper clad laminate of the present invention comprises a nonconductive polymer substrate, a tiecoat layer on the nonconductive polymer substrate, and a copper layer on the tiecoat layer. When performing the chemical polishing to reduce the thickness of the copper layer by 1 to 2 μm, the polished copper layer has surface roughness (Rz) of 0.1 to 0.15 μm and ND direction average grain of 2 μm or less.

Description

TECHNICAL FIELD [0001] The present invention relates to a flexible copper clad laminated film capable of preventing circuit disconnection / short circuit, and a method of manufacturing the same.

The present invention relates to a flexible copper-clad laminate film and a method of manufacturing the same, and more specifically, to a flexible copper-clad laminate film capable of preventing disconnection and / or short circuit of a circuit and a method of manufacturing the same.

Electronic devices such as notebook computers, mobile phones, PDAs, compact video cameras, and electronic notebooks have become increasingly smaller and lighter, flexible printed circuit boards (TABs) that can be applied to TAB (Tape Automated Bonding) and COF : FPCB) is increasing. Accordingly, there is an increasing demand for flexible copper clad laminate (FCCL) used in FPCB manufacturing.

A flexible printed circuit board can be obtained by selectively removing a copper layer of a flexible copper clad laminated film as a laminate of a nonconductive polymer film and a copper layer to form a predetermined circuit pattern on the nonconductive polymer film.

The flexible copper clad laminate film can be formed by: i) forming a nonconductive polymer film on the copper foil by i) producing a copper foil and then coating or laminating the film or ii) depositing copper on the nonconductive polymer film. The latter manufacturing method is advantageous over the former manufacturing method in that it enables formation of a very thin copper layer.

The method for forming a circuit pattern using the flexible copper clad laminated film includes: i) a subtractive method for forming an initial copper layer having a relatively thick thickness and then removing the remaining portion from the circuit wiring; and ii) There is a semi-additive method in which an initial copper layer having a small thickness is formed by a copper plating process, and copper plating (hereinafter, referred to as "copper pattern plating") is further performed on a region corresponding to the circuit wiring.

The semi-specific method is preferred to the subtractive method in that a narrower pitch can be realized.

In the semi-custom method, a chemical polishing process for reducing the thickness of the copper layer formed on the nonconductive polymer membrane needs to be performed.

However, since the polishing rate is not uniform over the entire surface of the copper layer when performing the chemical polishing process, there arises a problem that irregularities are formed on the copper layer surface in a part of the copper layer. The irregularities formed on the surface of the copper layer cause unevenness of the copper pattern plating.

Due to the unevenness of the copper pattern plating, a portion of the copper layer to be removed in the formation of the circuit pattern is not completely removed, but a part thereof is left, thereby causing a circuit short circuit, or the portion of the copper layer, A disconnection occurs.

The short circuit or disconnection of such a circuit lowers the yield and reliability of the flexible printed circuit board (FPCB) itself as well as the electronic equipment to which it is applied.

Accordingly, the present invention is directed to a flexible copper-clad laminated film and a method of manufacturing the same, which can prevent problems due to limitations and disadvantages of the related art.

One aspect of the present invention is to provide a flexible copper clad laminated film capable of preventing disconnection and / or short circuit of a circuit by ensuring uniform chemical polishing.

Another aspect of the present invention is to provide a method for producing a flexible copper clad laminated film capable of preventing disconnection and / or short circuit of a circuit by ensuring uniform chemical polishing.

Other features and advantages of the invention will be set forth in the description which follows, or may be learned by those skilled in the art from the description.

According to one aspect of the present invention, there is provided a nonconductive polymer substrate having a first side and a second side opposite to the first side; A first tie coat layer on the first side of the nonconductive polymer substrate; And a first copper layer on the first tie coat layer, wherein when performing the chemical polishing to reduce the thickness of the first copper layer by 1 to 2 占 퐉, the polished first copper layer has a thickness of 0.1 (Rz) of 0.15 mu m and an average grain size of copper grains in an ND (Normal Direction) direction of 2 mu m or less.

According to another aspect of the present invention, there is provided a method of preparing a nonconductive polymer substrate, comprising: preparing a nonconductive polymer substrate; Forming a tie coat layer on at least one side of the nonconductive polymeric substrate; Forming a copper seed layer on the tie coat layer through a sputtering process; And forming a copper plating layer on the copper seed layer, wherein the tie coat layer and the copper seed layer are formed on the non-conductive polymer base material by sequentially passing through a plurality of plating tanks, wherein the current density applied to each of the plating baths is 0.5 to 3 ASD, and a maximum current density among the current densities applied to the plating baths is 2.8 to 3 ASD, Wherein the temperature of the electrolyte in the plating bath is maintained at 34 to 36 占 폚.

The foregoing general description of the present invention is intended to be illustrative of or explaining the present invention, but does not limit the scope of the present invention.

According to the present invention, by fabricating a flexible printed circuit board through a semi-permanent method, not only a circuit pattern with a narrower pitch can be realized, but also a product defect rate due to circuit disconnection and / Productivity and reliability can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
1 is a cross-sectional view of a flexible copper-clad laminate film according to an embodiment of the present invention,
2 is a cross-sectional view of a flexible copper clad laminated film according to another embodiment of the present invention,
FIGS. 3 to 6 are cross-sectional views illustrating a method of manufacturing a flexible copper clad laminated film according to an embodiment of the present invention,
FIGS. 7 to 12 are cross-sectional views illustrating a method of manufacturing a flexible printed circuit board according to an embodiment of the present invention,
13A and 13B are photographs showing the EBSD measurement results of Example 1 and Comparative Example 1, respectively.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention. Therefore, the present invention encompasses all changes and modifications that come within the scope of the invention as defined in the appended claims and equivalents thereof.

1 is a cross-sectional view of a flexible copper-clad laminate film according to an embodiment of the present invention.

1, the flexible copper-clad laminate film 100 of the present invention comprises a nonconductive polymer substrate 110 having a first side and a second side opposite to the first side, the nonconductive polymer substrate (not shown) A first tie coat layer 120 on the first side of the first tie coat layer 110 and a first copper layer 130 on the first tie coat layer 120.

The nonconductive polymer substrate 110 may include polyimide and may be formed to have a thickness of 10 to 40 탆 so as to enable the use of roll-to-roll equipment and to impart ductility to the flexible copper- . ≪ / RTI >

The first tie coat layer 120 is interposed between the first and second tie coat layers 120 and 130 to improve adhesion between the first and second copper layers 130 and 130. The first tie coat layer 120 may be formed of Ni, Cr), molybdenum (Mo), niobium (Nb), iron (Fe), or a mixture of two or more thereof.

According to one embodiment of the present invention, the first tie coat layer 120 is a nickel alloy. For example, the first tie coat layer 120 may include nickel and chromium, and the content of chromium in the first tie coat layer 120 may be 5 to 25 wt%. If the chromium content is out of the above range, a desired degree of interfacial adhesion between the nonconductive polymer substrate 110 and the first copper layer 130 can not be secured.

According to one embodiment of the present invention, the first tie coat layer 120 has a thickness of 150 to 300 ANGSTROM. If the thickness is less than 150 angstroms, a desired degree of interfacial adhesion between the nonconductive polymer substrate 110 and the first copper layer 130 can not be secured. If the thickness exceeds 300 angstroms, The part to be etched is not etched but the risk of remaining is increased.

1, the first copper layer 130 includes a first copper seed layer 131 on the first tie coat layer 120 and a first copper seed layer 131 on the first copper seed layer 131, And may include a plating layer 132.

The first copper seed layer 131 may be formed to have a thickness of 500 to 1,500 A through a sputtering process and the first copper plating layer 132 may be formed to have a thickness of 1.8 to 2.4 μm through an electrolytic plating process. . The first copper seed layer 131 functions as an electric wiring when performing the electrolytic plating process using the roll-to-roll equipment.

The flexible copper-clad laminate film 100 of the present invention may further include a protective layer (not shown) on the first copper layer 130. The protective layer is for preventing oxidation and corrosion of the first copper layer 130 and may be formed of an organic material.

The flexible copper-clad laminate film (100) of the present invention is intended to be applied to the manufacture of a flexible printed circuit board by a semi-individual method. According to the semi-custom method, a copper pattern layer is additionally formed through electrolytic plating only on regions corresponding to the circuit wiring in the first copper layer 130. Therefore, before the additional plating process is performed, a process for forming a pattern for preventing plating, for example, a photosensitive pattern, is required on areas where the copper pattern layer should not be formed.

If the adhesive force between the photosensitive pattern and the first copper layer 130 is insufficient, there is a danger that the photosensitive pattern may be wholly or partly peeled off from the first copper layer 130. The peeling of the photosensitive pattern and the first copper layer 130 results in the formation of a copper pattern layer at an undesired position when performing the additional plating process for forming a fine circuit pattern.

Therefore, in order to improve the adhesion between the photosensitive pattern and the first copper layer 130, the first copper layer 130 may be chemically polished before the photosensitive pattern is formed on the first copper layer 130 .

As described above, since the polishing rate is not uniform over the entire surface of the first copper layer 130 when the chemical polishing process is performed, the problem that the irregularities are formed in some regions of the first copper layer 130 . The irregularities formed on the surface of the first copper layer 130 cause unevenness of electroplating for forming the copper pattern layer. Due to the unevenness of the electroplating, the portion of the copper layer to be removed in the formation of the circuit pattern is not completely removed, but a part of the copper layer remains, thereby causing a circuit short circuit, or the portion of the copper layer, ≪ / RTI >

Therefore, according to the present invention, when performing the chemical polishing to reduce the thickness of the first copper layer 130 by 1 to 2 占 퐉, the polished first copper layer 130 has a surface roughness of 0.1 to 0.15 占 퐉 Rz) and an average grain size of the copper grain in the ND (Normal Direction) direction of 2 탆 or less. That is, after chemical polishing of the first copper layer 130, there is no concavity and convexity on the polished surface. Therefore, when a flexible circuit board is manufactured from the flexible copper-clad laminate film 100 of the present invention, defects due to disconnection and / or short circuit can be remarkably reduced, and as a result, productivity and reliability of the product can be improved.

The copper etching solution used for the chemical polishing of the first copper layer 130 was obtained by diluting a stock solution of MFE-500 (10 wt% of hydrogen peroxide, 23 wt% of sulfuric acid, 67 wt% of water) And the chemical polishing is performed at room temperature.

Hereinafter, a flexible copper clad laminated film 100 according to another embodiment of the present invention will be described with reference to FIG.

2, a flexible copper clad laminate film 100 according to another embodiment of the present invention includes a second tie coat layer 120a on the second surface of the nonconductive polymer substrate 110, And a second copper layer 130a on the tie coat layer 120a.

Like the first tie coat layer 120, the second tie coat layer 120a may also include nickel and chromium, the content of chromium may range from 5 to 25% by weight, .

The second copper layer 130a includes a second copper seed layer 131a on the second tie coat layer 120a and a second copper plating layer 132a on the second copper seed layer 131a. The second copper seed layer 131a may be formed to have a thickness of 500 to 1,500 A through a sputtering process and the second copper plating layer 132a may be formed to have a thickness of 1.8 to 2.4 μm through an electrolytic plating process. .

When the second copper layer 130a is chemically polished to reduce the thickness of the second copper layer 130a by 1 to 2 占 퐉, the polished second copper layer 130a may have a thickness of 0.1 to 0.15 占 퐉 The surface roughness Rz and the average grain size of the copper grain in the ND direction of 2 占 퐉 or less.

Hereinafter, a method of manufacturing the flexible copper clad laminated film 100 according to an embodiment of the present invention will be described in detail with reference to FIGS. 3 to 6. FIG.

First, as illustrated in FIG. 3, a nonconductive polymer substrate 110 is prepared.

The nonconductive polymer substrate 110 may have a thickness of 10 to 40 탆 and may include a thermosetting resin such as a phenol resin, a phenol aldehyde resin, an allyl resin, an epoxy resin, etc., a polyolefin resin such as polyethylene Resin, polypropylene resin, etc.), polyester resin (for example, PET, PEN or the like), or polyimide resin.

Preferably, the nonconductive polymer substrate 110 is formed of a polyimide resin. For example, a polyimide precursor, polyamic acid, may be extruded to form a film, and the film may be heat-treated to imidize the polyamic acid, thereby producing a nonconductive polymer substrate 110 including polyimide.

The drying step for removing moisture and residual gas from the nonconductive polymer substrate 110 may be performed at 50 to 300 ° C using an infrared (IR) heater in a vacuum atmosphere. If the temperature of the infrared (IR) heater is less than 50 캜, moisture can not be properly removed. If the temperature of the infrared (IR) heater is more than 300 캜, the nonconductive polymer substrate 110 is damaged.

After the drying step, in order to remove contaminants that may be on the surface of the nonconductive polymeric substrate 110 and to improve adhesion with the tie coat layer 120 to be formed in a subsequent process through surface modification, The conductive polymer substrate 110 may be treated with a plasma.

Next, as illustrated in FIG. 4, a tie coat layer 120 is formed on at least one side of the nonconductive polymer substrate 110.

The tie coat layer 120 may be formed to have a thickness of 150 to 300 ANGSTROM through a sputtering process using a DC sputtering apparatus. When the thickness of the tie coat layer 120 is less than 150 ANGSTROM, the adhesion between the non-conductive polymer substrate 110 and the copper layer 130 to be formed in the subsequent process becomes insufficient. On the other hand, when the thickness of the tie coat layer 120 exceeds 300 ANGSTROM, a part of the tie coat layer 120 to be removed remains when an etching process for forming a circuit pattern is performed, Which increases the risk of triggering.

As described above, the tie coat layer 120 is formed to increase the adhesion of the non-conductive polymer substrate 110 and the copper layer 130 to be formed in a subsequent process. Examples of the tie coat layer 120 include nickel (Ni), chrome (Cr) (Mo), niobium (Nb), iron (Fe), or a mixture of two or more thereof.

According to one embodiment of the present invention, the tie coat layer 120 is a nickel alloy. For example, the tie coat layer 120 may include nickel and chromium, and the content of chromium in the tie coat layer 120 may be 5 to 25% by weight.

The density of the tie coat layer 120 can be adjusted by adjusting the power of the sputtering apparatus and the oxygen content of the tie coat layer 120 can be adjusted by adjusting the degree of vacuum of the chamber.

Next, a copper layer 130 is formed on the tie coat layer 120. The step of forming the copper layer 130 may include forming a copper seed layer 131 on the tie coat layer 120 as illustrated in FIG. 5 and forming the copper seed layer 131 And a copper plating layer 132 formed on the copper plating layer 132. [

The copper seed layer 131 may be formed to have a thickness of 500 to 1,500 A through a sputtering process using a DC sputtering apparatus and the copper plating layer 132 may be formed to have a thickness of 1.8 to 2.4 μm through an electrolytic plating process. .

Hereinafter, the electrolytic plating process of the present invention for forming the copper plating layer 132 will be described in more detail.

Wherein the tie coat layer 120 and the non-conductive polymer substrate 110 on which the copper seed layer 131 is formed contain 30 to 40 g / L of copper, 170 to 180 g / L of sulfuric acid, and 45 to 55 the multistage electrolytic plating of the present invention is performed by sequentially passing through 10 to 20 plating tanks in which an electrolyte solution containing Cl of ppm is contained.

The current density applied to each of the plating baths is 0.5 to 3 ASD, and the maximum current density among the current densities applied to the plating baths is 2.8 - 3 ASD.

According to an embodiment of the present invention, the current density can be increased for each step according to the order in which the stepwise electroplating is performed.

According to the present invention, the temperature of the electrolytic solution in the plating baths is maintained at 34 to 36 ° C in order to prevent the occurrence of irregularities in the copper layer 130 after chemical polishing.

Through the step-wise electrolytic plating of the present invention, the copper layer 130 can be manufactured which can suppress the unevenness of the etching rate at the time of chemical polishing as much as possible. When the copper layer 130 is chemically polished to reduce the thickness of the copper layer 130 by 1 to 2 占 퐉, the polished copper layer 130 may have a surface roughness Rz of 0.1 to 0.15 占 퐉 and an ND direction of 2 占 퐉 or less Of the average grain size of the copper grains. That is, after the chemical polishing of the copper layer 130, there is no concavity and convexity on the polished surface. Therefore, when a flexible circuit board is manufactured using the flexible copper-clad laminate film 100 of the present invention manufactured as described above, it is possible to significantly reduce defects due to disconnection and / or short circuiting of the circuit, and as a result, .

Hereinafter, a method of manufacturing a flexible printed circuit board according to an embodiment of the present invention will be described in detail with reference to FIGS. 7 to 12. FIG.

First, the flexible copper clad laminated film 100 of the present invention manufactured as described above is prepared.

8, the copper layer 130 (more precisely, the copper plating layer 132) is chemically polished by using a copper etching solution so that the thickness of the copper layer 130 is 1 to 2 Mu m.

According to one embodiment of the present invention, the chemical polishing of the copper plated layer 132 is performed by spraying a copper etchant, and may be performed at an etching rate of 0.03 to 0.04 μm / sec for 25 to 30 seconds.

The polished copper layer 130 ' may have a thickness of 0.5 to 1.5 [mu] m. If the thickness of the polished copper layer 130 'is less than 0.5 탆, there is a risk that irregularities are formed on the polished surface due to etching unevenness.

Next, as illustrated in FIG. 9, a photosensitive pattern 10 is formed on the polished copper layer 130 '. The photosensitive pattern 10 may be performed through a conventional photolithography process. The polished copper layer 130 'will include a first portion covered with the photosensitive pattern 10 and a second portion not covered with the photosensitive pattern 10.

Subsequently, a circuit pattern is formed using the photosensitive pattern. Hereinafter, a circuit pattern forming method according to an embodiment of the present invention will be described.

First, as illustrated in FIG. 10, by performing electrolytic plating, a copper layer having a thickness of 8 to 12 占 퐉 is formed on the surface of the second portion of the polished copper layer 130 'that is not covered with the photosensitive pattern 10 A copper pattern layer 140 is formed.

Then, as illustrated in Fig. 11, the photosensitive pattern 10 is removed through a normal ashing process.

Then, as illustrated in FIG. 12, by selectively removing the first portion of the polished copper layer 130 ' and the corresponding tie coat layer 120 portion that had been covered with the photosensitive pattern 10, Complete the pattern.

Hereinafter, the present invention will be described in detail with reference to examples and comparative examples. It is to be understood, however, that the present invention is not limited to the following embodiments, but the scope of the present invention is not limited to these embodiments.

Examples 1 to 6 and Comparative Examples 1 to 12

The polyimide film was dried with an infrared (IR) heater and then subjected to a plasma surface treatment. Then, a 200 Å thick NiCr tie coat layer was formed through a sputtering process. Then, a 700 Å thick copper seed layer was formed through a sputtering process. Subsequently, the flexible copper-clad laminated films of Examples 1 to 6 and Comparative Examples 1 to 12 were completed by electrolytic plating under different conditions shown in Table 1 below to form a copper plating layer having a thickness of 2 탆.

The maximum current density in Table 1 means the maximum of the current density values applied to the plating baths, respectively.

Plating condition Copper
(g / L) Sulfuric acid
(g / L) Cl
(ppm) Plating temperature
(° C) Maximum current density
(ASD) Example 1 35 175 50 34 2.8 Example 2 35 175 50 36 2.8 Example 3 35 175 50 34 2.9 Example 4 35 175 50 36 2.9 Example 5 35 175 50 34 3 Example 6 35 175 50 36 3 Comparative Example 1 35 175 50 30 2.4 Comparative Example 2 35 175 50 32 2.6 Comparative Example 3 35 175 50 30 2.8 Comparative Example 4 35 175 50 32 3 Comparative Example 5 35 175 50 30 3.2 Comparative Example 6 35 175 50 32 3.4 Comparative Example 7 35 175 50 38 2.4 Comparative Example 8 35 175 50 40 2.6 Comparative Example 9 35 175 50 38 2.8 Comparative Example 10 35 175 50 40 3 Comparative Example 11 35 175 50 38 3.2 Comparative Example 12 35 175 50 40 3.4

Chemical polishing was carried out by spraying a copper etching solution (MFE-500, 20% dilution by Poongwon Chemical) on the flexible copper clad laminated films produced by the above examples and comparative examples to obtain the final thickness of the copper layer The surface roughness Rz of the polished surface of the copper layer, the average grain size of the copper grains in the ND direction, and the irregularities were measured or observed, respectively, after the thickness of the seed layer + the thickness of the copper plating layer) , And the results are shown in Table 2 below.

* Surface roughness (Rz)

The contact type evaluation (measurement area: 10 μm × 10 μm) was performed using an AFM (Atomic Force Microscope) according to the standard JIS B0601: 1994.

* Average size of copper grain in the ND direction

The average grain size of the copper grains in the ND direction was measured using an EBSD (Electron Backscatter Diffraction) equipment. The viewing angle in the ND direction was 300 μm, the step size was 0.5 μm, and the analysis area was 25 μm × 25 μm. TSIM's OIM ^TM was used as software for analysis. 13A and 13B are graphs and photographs showing the results of EBSD measurement of Example 1 and Comparative Example 1, respectively.

* Whether irregularities occur

The sectional shape obtained by using a FIB (accelerated voltage: 30 kV, magnification: 2000 times) was observed and it was regarded that irregularities occurred when protrusions due to uneven residuals of Cu particles existed.

Results after chemical polishing Copper layer thickness after polishing
(탆) Surface roughness
(탆) Average grain size of copper
(탆) Whether unevenness occurs Example 1 0.8 0.15 1.8 × Example 2 0.8 0.13 1.6 × Example 3 0.8 0.12 1.7 × Example 4 0.8 0.13 1.5 × Example 5 0.8 0.14 1.2 × Example 6 0.8 0.14 1.9 × Comparative Example 1 0.8 0.27 3.2 ○ Comparative Example 2 0.8 0.28 3.4 ○ Comparative Example 3 0.8 0.28 2.6 ○ Comparative Example 4 0.8 0.27 2.4 ○ Comparative Example 5 0.8 0.26 2.3 ○ Comparative Example 6 0.8 0.25 3.3 ○ Comparative Example 7 0.8 0.21 1.8 ○ Comparative Example 8 0.8 0.22 2.8 ○ Comparative Example 9 0.8 0.2 2.3 ○ Comparative Example 10 0.8 0.23 2.4 ○ Comparative Example 11 0.8 0.22 2.7 ○ Comparative Example 12 0.8 0.2 1.9 ○

As can be seen from Table 2, when the maximum current density is out of 2.8 to 3 ASD and the plating temperature (that is, the temperature of the electrolytic solution) is out of 34 to 36 占 폚 when performing electrolytic plating for forming the copper plating layer 4, and 9 (for example, when the plating temperature (i.e., the temperature of the electrolytic solution) is out of the range of 34 to 36 占 폚 even when the maximum current density is 2.8 to 3 ASD as well as in Examples 1, 2, , 10), the surface roughness Rz of the copper layer exceeded 0.15 mu m. Further, in the case of Comparative Examples 1-6 and 8-11, the average size of the copper grain in the ND direction exceeded 2 탆. As a result, unevenness occurred after chemical polishing in all comparative examples.

100: flexible copper foil laminated film 110: nonconductive polymer substrate
120: tie coat layer 130: copper layer
131: copper seed layer 132: copper plating layer
140: Copper pattern layer

Claims (10)

A nonconductive polymer substrate having a first side and a second side opposite thereto;
A first tie coat layer on the first side of the nonconductive polymer substrate; And
A first copper layer on the first tie coat layer,
When performing the chemical polishing to reduce the thickness of the first copper layer by 1 to 2 占 퐉, the polished first copper layer has a surface roughness (Rz) of 0.1 to 0.15 占 퐉 and an ND (Normal Direction) direction of 2 占 퐉 or less Of copper grains. ≪ RTI ID = 0.0 >
Flexible copper foil laminated film. The method according to claim 1,
Characterized in that the nonconductive polymer substrate comprises polyimide and has a thickness of 10 to 40 [mu] m.
Flexible copper foil laminated film. The method according to claim 1,
Wherein the first tie coat layer comprises a material selected from the group consisting of Ni, Cr, Mo, Nb, Fe or a mixture of two or more thereof and having a thickness of 150 to 300 angstroms Features,
Flexible copper foil laminated film. The method of claim 3,
Wherein the first tie coat layer comprises nickel and chromium,
And the content of chromium in the first tie coat layer is 5 to 25 wt%.
Flexible copper foil laminated film. The method according to claim 1,
Wherein the first copper layer comprises:
A first copper seed layer on said first tie coat layer; And
A first copper plating layer on the first copper seed layer,
Wherein the first copper seed layer has a thickness of 500 to 1,500 A,
Wherein the first copper plating layer has a thickness of 1.8 to 2.4 占 퐉,
Flexible copper foil laminated film. The method according to claim 1,
A second tie coat layer on the second side of the nonconductive polymeric substrate; And
Further comprising a second copper layer on the second tie coat layer,
Wherein the polished second copper layer has a surface roughness (Rz) of 0.1 to 0.15 mu m and an average copper grain average in the ND direction of 2 mu m or less when performing the chemical polishing to reduce the thickness of the second copper layer by 1 to 2 mu m Having a size,
Flexible copper foil laminated film. Preparing a nonconductive polymer substrate;
Forming a tie coat layer on at least one side of the nonconductive polymeric substrate;
Forming a copper seed layer on the tie coat layer through a sputtering process; And
And forming a copper plating layer on the copper seed layer,
The copper plating layer is formed through a multistage electrolytic plating process in which the tie coat layer and the copper seed layer are formed on the nonconductive polymer substrate sequentially through a plurality of plating tanks,
The current density applied to each of the plating baths is 0.5 to 3 ASD,
The maximum current density among the current densities applied in the plating baths is 2.8 to 3 ASD,
Wherein the temperature of the electrolyte in the plating baths is maintained at 34 to < RTI ID = 0.0 > 36 C. <
A method for producing a flexible copper foil laminated film. 8. The method of claim 7,
The method may further include, before forming the tie coat layer,
Removing water and residual gas from the nonconductive polymer substrate; And
Next, the method further comprises treating at least one surface of the nonconductive polymer substrate with a plasma,
The tie coat layer is formed through a sputtering process and includes nickel (Ni), chromium (Cr), molybdenum (Mo), niobium (Nb), iron (Fe) A < / RTI >
A method for producing a flexible copper foil laminated film. 9. The method of claim 8,
Wherein the tie coat layer comprises nickel and chromium,
Wherein the content of chromium in the tie coat layer is 5 to 25% by weight.
A method for producing a flexible copper foil laminated film. 8. The method of claim 7,
The current density is increased for each step according to the order in which the stepwise electroplating is performed,
Wherein each of the electrolytic solutions in the plating baths comprises 30 to 40 g / L of copper, 170 to 180 g / L of sulfuric acid, and 45 to 55 ppm of Cl.
A method for producing a flexible copper foil laminated film.

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