KR102486034B1 - Light emitting package and lighting device having thereof - Google Patents

Abstract

The embodiment relates to a light emitting device package and a lighting device.
The light emitting device package of the embodiment includes a first lead frame, a second lead frame spaced apart from the first lead frame in a first direction, and a body coupled to the first and second lead frames and having a cavity, and on the first lead frame. The light emitting device may be mounted, the cavity may include first to fourth inner surfaces, and first to fourth corners between the first to fourth inner surfaces may include a predetermined curvature. The embodiment can improve defects such as cracks that may occur in the corner region of the cavity. That is, the embodiment can improve the reliability of injection molding for coupling the body and the first and second lead frames.

Description

Light emitting device package and lighting device {LIGHT EMITTING PACKAGE AND LIGHTING DEVICE HAVING THEREOF}

The embodiment relates to a light emitting device package and a lighting device.

A light emitting device (Light Emitting Device) is a kind of semiconductor device that converts electrical energy into light, and is in the limelight as a next-generation light source replacing conventional fluorescent lamps and incandescent lamps.

Since light emitting diodes use semiconductor devices to generate light, they consume very little power compared to incandescent lamps that generate light by heating tungsten or fluorescent lamps that generate light by colliding ultraviolet rays generated through high-voltage discharge with phosphors. .

In addition, since the light emitting diode generates light using a potential gap of a semiconductor device, it has a longer lifespan, faster response characteristics, and eco-friendly characteristics than conventional light sources.

Accordingly, many studies are being conducted to replace existing light sources with light emitting diodes, and light emitting diodes are increasingly used as light sources for lighting devices such as various lamps used indoors and outdoors, liquid crystal displays, electronic signboards, and street lights.

The embodiment provides a light emitting device package and a lighting device capable of improving reliability of injection molding of a body.

The embodiment provides a light emitting device package and a lighting device capable of improving light extraction efficiency.

The light emitting device package of the embodiment includes a first lead frame, a second lead frame spaced apart from the first lead frame in a first direction, a body coupled to the first and second lead frames and having a cavity, and a first lead frame. A light emitting device may be mounted thereon, the cavity may include first to fourth inner surfaces, and first to fourth corners between the first to fourth inner surfaces may have a predetermined curvature. The embodiment can improve defects such as cracks that may occur in the corner region of the cavity. That is, the embodiment can improve the reliability of injection molding for coupling the body and the first and second lead frames.

The lighting device of the embodiment may include the light emitting device package.

The light emitting device package of the embodiment includes a certain curvature at the corners of the inner surfaces of the cavity exposing the first and second lead frames, thereby improving defects such as cracks that may occur in the corner region of the cavity. That is, the embodiment can improve the reliability of injection molding for coupling the body and the first and second lead frames.

In addition, since the distance between the inner surfaces of the cavity and the light emitting device is uniformly maintained throughout, the light loss in the corner region of the cavity can be improved. That is, the embodiment can improve light extraction efficiency.

1 is a perspective view illustrating a light emitting device package according to an exemplary embodiment.
2 is a plan view illustrating a light emitting device package according to an exemplary embodiment.
FIG. 3 is a cross-sectional view of the light emitting device package taken along line I-I' of FIG. 2 .
FIG. 4 is a view showing area A of FIG. 2 .
5 is a cross-sectional view illustrating a light emitting chip included in a light emitting device package according to an embodiment.
6 is a cross-sectional view illustrating another example of a light emitting chip included in a light emitting device package according to an embodiment.
7 is a perspective view illustrating a display device including a light emitting device package according to an embodiment.
8 is a cross-sectional view illustrating another example of a display device including a light emitting device package according to an embodiment.

In the description of the embodiment, each layer (film), region, pattern or structure is "on/over" or "under" the substrate, each layer (film), region, pad or pattern. In the case where it is described as being formed in, "on/over" and "under" include both "directly" or "indirectly" formed through another layer. do. In addition, the criteria for the top/top or bottom of each layer will be described based on the drawings.

1 is a perspective view illustrating a light emitting device package according to an exemplary embodiment, FIG. 2 is a plan view illustrating a light emitting device package according to an exemplary embodiment, and FIG. 3 is a light emitting device cut along line I-I' of FIG. 2 It is a cross-sectional view showing a device package, and FIG. 4 is a view showing area A of FIG. 2 .

1 to 4, the light emitting device package 100 according to an embodiment includes a first lead frame 130, a second lead frame 140, a body 120, a protective device 160, and A light emitting device 150 may be included.

The light emitting device 150 may be disposed on the first lead frame 130 . The light emitting device 150 may be disposed on an upper surface of the first lead frame 130 exposed from the body 120 . Although the light emitting element 150 of the embodiment is described as being limited to a single configuration, it is not limited thereto, and may be configured in a plurality of two or more or may be configured in an array form. The light emitting element 150 may be connected through a wire, but is not limited thereto. The light emitting device 150 may be disposed in the center of the body 120, but is not limited thereto. The top view of the light emitting device 150 may have a triangular, circular, or polygonal structure. For example, the light emitting device 150 may have a quadrangular structure in a top view having first to fourth side surfaces 150a to 150d.

The protection device 160 may be disposed on the second lead frame 140 . The protection device 160 may be disposed on an upper surface of the second lead frame 180 exposed from the body 120 . The protection device 160 may be a Zener diode, a thyristor, a transient voltage suppression (TVS), or the like, but is not limited thereto. The protection device 160 of the embodiment will be described as an example of a Zener diode that protects the light emitting device 150 from ESD (Electro Static Discharge). The protection device 160 may be connected to the first lead frame 130 through a wire.

The body 120 may include at least one of a translucent material, a reflective material, and an insulating material. The body 120 may include a material having higher reflectance than transmittance with respect to light emitted from the light emitting device 150 . The body 120 may be a resin-based insulating material. For example, the body 120 may include a resin material such as polyphthalamide (PPA), epoxy or silicon material, silicon (Si), metal material, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), printed circuit It may be formed on at least one of the substrates (PCB). The body 120 may include an outer surface having a constant curvature or an angled surface. The body 120 may have, for example, a circular or polygonal shape in a top view. The body 120 of the embodiment will be described as an example of a polygonal shape including the first to fourth outer surfaces 121 to 124.

The body 120 may be coupled to the first and second lead frames 130 and 140 . The body 120 may include a cavity 125 exposing portions of upper surfaces of the first and second lead frames 130 and 140 .

The cavity 125 includes first to fourth inner surfaces 126a to 126d, and includes a first bottom surface 125a exposing the first lead frame 130 and the second lead frame 140. Exposing second and third bottom surfaces 125b and 125c may be included. Here, the first bottom surface 125a may correspond to the first lead frame 130 exposed by the first to fourth inner surfaces 126a to 126d. The second and third bottom surfaces 125b and 125c may correspond to the second lead frame 140 exposed from the second inner surface 126b.

The first inner surface 126a may face the second inner surface 126b in a first direction (XX'). The first and second inner surfaces 126a and 126b may be inclined from the first bottom surface 125a and may be symmetrical to each other. The third inner surface 126c may face the fourth inner surface 126d in the second direction (Y-Y'). The third and fourth inner surfaces 126c and 126d may be inclined from the first bottom surface 125a and may be disposed symmetrically with each other. The first inner surface 126a of the cavity 125 may face the first side surface 150a of the light emitting device 150 . The second inner surface 126b of the cavity 125 may face the second side surface 150b of the light emitting device 150 . The third inner surface 126c of the cavity 125 may face the third side surface 150c of the light emitting device 150 . The fourth inner surface 126d of the cavity 125 may face the fourth side surface 150d of the light emitting device 150 . The first to fourth inner surfaces 126a to 126d of the cavity 125 may be disposed at regular intervals from the first to fourth side surfaces 150a to 150d of the light emitting device 150 .

The cavity 125 includes a first edge 127a between the first and third inner surfaces 126a and 126c and a second edge 127b between the first and fourth inner surfaces 126a and 126d. and a third edge 127c between the second and fourth inner surfaces 126b and 126d and a fourth edge 127d between the second and third inner surfaces 126b and 126c. .

The first corner 127a may include a first curvature R1 having a constant distance from the light emitting device 150 . The first curvature R1 may be greater than or equal to 50 μm. According to the embodiment, by using the first edge 127a having the first curvature R1 of 50 μm or more, injection flow around the first edge 127a may be improved in an injection process, thereby improving crack defects.

The second corner 127b may include a second curvature R2 having a constant distance from the light emitting element 150 . The second curvature R2 may be greater than or equal to 50 μm. The first and second curvatures R1 and R2 may have the same curvature, but are not limited thereto. According to the embodiment, by using the second edge 127b having the second curvature R2 of 50 μm or more, injection flow around the second edge 127b may be improved in an injection process, thereby improving crack defects.

The third corner 127c may include a third curvature R3. The third curvature R3 may be greater than or equal to 50 μm, but is not limited thereto. For example, the third curvature R3 may be the same as the first and second curvatures R1 and R2, but is not limited thereto. According to the embodiment, the injection flow around the third edge 127c is improved in an injection process by the third edge 127c having the third curvature R3 of 50 μm or more, thereby improving crack defects.

The fourth corner 127d may include a fourth curvature R4. The fourth curvature R4 may be greater than or equal to 50 μm, but is not limited thereto. The fourth curvature R4 may be the same as the first and second curvatures R1 and R2, but is not limited thereto. The third and fourth curvatures R3 and R4 may have the same curvature, but are not limited thereto. According to the embodiment, the injection flow around the fourth edge 127d is improved in the injection process by the fourth edge 127d having the fourth curvature R4 of 50 μm or more, thereby improving crack defects.

The cavity 125 may include a first wire groove part 127e extending from the third edge 127c and a second wire groove part 127f extending from the fourth edge 127d.

The first wire groove part 127e may be disposed in a direction from the third edge 127c to the second inner surface 126b of the cavity 125 . The first wire groove portion 127e may expose the second lead frame 140 connected to the first wire 150W of the light emitting device 150 . The first wire groove portion 127e may include a fifth curvature R5. The fifth curvature R5 may be greater than or equal to 50 μm. The fifth curvature R5 may be smaller than the first to fourth curvatures R1 to R4, but is not limited thereto. According to the embodiment, the injection flow around the first wire groove 127e is improved in an injection process by the first wire groove 127e having the fifth curvature R5 of 50 μm or more, thereby improving crack defects.

The second wire groove part 127f may be disposed from the fourth edge 127d toward the third inner surface 126c of the cavity 125 . The second wire groove portion 127f may expose the first lead frame 130 connected to the second wire 160W of the protection device 160 . The second wire groove portion 127f may include a sixth curvature R6. The sixth curvature R6 may be 50 μm or more. The fifth and sixth curvatures R5 and R6 may be equal to each other, but are not limited thereto. The fifth curvature R5 may be smaller than the first to fourth curvatures R1 to R4, but is not limited thereto. According to the embodiment, the injection flow around the second wire groove 127f is improved in an injection process by the second wire groove 127f having the sixth curvature R6 of 50 μm or more, thereby improving crack defects.

The body 120 may include first to fourth outer surfaces 121 to 124, and may have a rectangular structure in a top view shape. The first and second outer surfaces 121 and 122 may be disposed side by side in a first direction (XX'). In the embodiment, portions of the first and second lead frames 130 and 140 may be exposed from the first and second outer surfaces 121 and 122 . In the embodiment, the first protrusion 131 of the first lead frame 130 may be exposed from the first outer surface 121 . In the embodiment, the second protrusion 141 of the second lead frame 140 may be exposed from the second outer surface 122 . The first and second protrusions 131 and 141 may be arranged side by side in a second direction (Y-Y') orthogonal to the first direction (X-X').

The first and second lead frames 130 and 140 may be coupled to the body 120 at a predetermined interval. The light emitting device 150 may be mounted on the first lead frame 130 , and the protection device 160 may be mounted on the second lead frame 140 . The first and second lead frames 130 and 140 may be arranged side by side in a first direction (X-X'). The first lead frame 130 may have a larger width in the first direction (X-X') than the second lead frame 140, but is not limited thereto. The first and second lead frames 130 and 140 may include a conductive material. For example, the first and second lead frames 130 and 140 may be made of titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), or platinum (Pt). , It may include at least one of tin (Sn), silver (Ag), phosphorus (P), iron (Fe), tin (Sn), zinc (Zn), and aluminum (Al), and be formed of a plurality of layers. can For example, the first and second lead frames 130 and 140 of the embodiment may be composed of a base layer containing copper (Cu) and an anti-oxidation layer containing silver (Ag) covering the base layer, but are not limited thereto not.

The first lead frame 130 may include the first protrusion 131 protruding outward from the body 120 . The first protrusion 131 may include a stepped structure at both ends. The stepped structure may be disposed parallel to the first protrusion 131 in the second direction (Y-Y′) and may extend from the first protrusion 131 . Although not shown in detail in the drawing, the surface of the first protrusion 131 may be an anti-oxidation layer containing silver (Ag).

The first lead frame 130 may include a first stepped portion 136 in an electrode separation region facing the second lead frame 140 . The first stepped portion 136 may have a recess shape and may have a stepped cross section, but is not limited thereto. The first stepped portion 136 may increase a contact area with the body 120 to improve bonding force with the body 120 . In addition, the first stepped portion 136 may improve moisture permeation from the outside due to the stepped structure. The first stepped portion 136 may be formed by etching a portion of the edge of the lower surface of the first lead frame 130, but is not limited thereto. The thickness of the first stepped portion 136 may be 50% of the thickness of the first lead frame 130, but is not limited thereto. For example, the thickness of the first step portion 136 may be 50% or more of the thickness of the first lead frame 130 .

The first lead frame 130 may include at least one first through hole 137 . The first through hole 137 may include a second stepped portion 134 . The second stepped portion 134 may increase a contact area with the body 120 to improve bonding force with the body 120 . In addition, the second stepped portion 134 may improve moisture permeation from the outside due to the stepped structure. The second stepped portion 134 may have a thickness corresponding to that of the first stepped portion 136 .

The first lead frame 130 may include the first protrusion 131 protruding outward of the body 120 . The first protrusion 131 may include a stepped structure at both ends. The stepped structure may be disposed parallel to the first protrusion 131 in the second direction (Y-Y′) and may extend from the first protrusion 131 . Although not shown in detail in the drawing, the surface of the first protrusion 131 may be an anti-oxidation layer containing silver (Ag).

The second lead frame 140 may include the second protrusion 141 protruding outward of the body 120 . The second protrusion 141 may include a stepped structure at both ends. The stepped structure may be disposed parallel to the second protrusion 141 in the second direction (YY′) and may extend from the second protrusion 141 . Although not shown in detail in the drawing, the surface of the second protrusion 141 may be an anti-oxidation layer containing silver (Ag).

The second lead frame 140 may include a third stepped portion 146 in an electrode separation region facing the first lead frame 130 . The third stepped portion 146 may have a recess shape and may have a stair structure in cross section, but is not limited thereto. The third stepped portion 146 may increase a contact area with the body 120 to improve bonding strength with the body 120 . In addition, the third stepped portion 146 may improve moisture permeation from the outside due to the stepped structure. The third stepped portion 146 may be formed by etching a portion of the edge of the lower surface of the second lead frame 140, but is not limited thereto. The thickness of the third stepped portion 146 may be 50% of the thickness of the second lead frame 140, but is not limited thereto. For example, the thickness of the third stepped portion 146 may be 50% or more of the thickness of the second lead frame 140 .

The second lead frame 140 may include at least one second through hole 147 . The second through hole 147 may include a fourth stepped portion 144 . The fourth stepped portion 144 may increase a contact area with the body 120 to improve bonding force with the body 120 . In addition, the fourth stepped portion 144 may improve moisture permeation from the outside due to the stepped structure. The fourth stepped portion 144 may have a thickness corresponding to that of the third stepped portion 146 .

The light emitting device package 100 of the embodiment has first to fourth corners 127a having first to fourth curvatures R1 to R4 of the cavity 125 exposing the first and second lead frames 130 and 140 . Through operations 127d), defects such as cracks that may occur in the corner region of the cavity 125 may be improved. That is, the embodiment can improve the reliability of injection molding for coupling the body 120 and the first and second lead frames 130 and 140 .

In addition, the embodiment includes a first wire groove portion 127e in which the first wire 150W of the light emitting device 150 is disposed and a second wire groove portion 127f in which the second wire 160W of the protection device 160 is disposed. It is possible to improve defects such as cracks in the injection process of the body ( ) by including the fifth and sixth curvatures ( R5 and R6 ), respectively, which are constant.

In addition, since the distance between the inner surfaces of the cavity 120 and the light emitting device 150 is uniformly maintained throughout, the light loss in the corner region of the cavity 120 can be improved. That is, the embodiment can improve light extraction efficiency.

<light emitting chip>

5 is a cross-sectional view illustrating a light emitting chip included in a light emitting device package according to an embodiment.

As shown in FIG. 5 , the light emitting chip includes a substrate 511 , a buffer layer 512 , a light emitting structure 510 , a first electrode 516 and a second electrode 517 . The substrate 511 may be made of a light-transmitting or non-light-transmitting material, and may include a conductive or insulating substrate.

The buffer layer 512 reduces a difference in lattice constant between the substrate 511 and the material of the light emitting structure 510 and may be formed of a nitride semiconductor. Crystal quality may be improved by further forming a nitride semiconductor layer not doped with a dopant between the buffer layer 512 and the light emitting structure 510 .

The light emitting structure 510 includes a first conductivity type semiconductor layer 513 , an active layer 514 and a second conductivity type semiconductor layer 515 .

For example, it may be implemented with compound semiconductors such as group II-IV and group III-V. The first conductivity-type semiconductor layer 513 may be formed in a single layer or multiple layers. The first conductivity type semiconductor layer 513 may be doped with a first conductivity type dopant. For example, when the first conductivity-type semiconductor layer 513 is an n-type semiconductor layer, it may include an n-type dopant. For example, the n-type dopant may include Si, Ge, Sn, Se, or Te, but is not limited thereto. The first conductivity-type semiconductor layer 513 may have a composition formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). The first conductivity-type semiconductor layer 513 has a stacked structure of layers including at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. can include

A first clad layer may be formed between the first conductivity-type semiconductor layer 513 and the active layer 514 . The first cladding layer may be formed of a GaN-based semiconductor, and may have a band gap greater than or equal to that of the active layer 514 . The first cladding layer is formed of a first conductivity type and may include a function of confining carriers.

The active layer 514 is disposed on the first conductivity-type semiconductor layer 513 and selectively includes a single quantum well, a multiple quantum well (MQW), a quantum wire structure, or a quantum dot structure. do. The active layer 514 includes a cycle of a well layer and a barrier layer. The well layer includes a composition formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), and the barrier layer is In _x Al _y Ga ₁ It may include a composition formula of _-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). The period of the well layer/barrier layer may be formed to be more than one period by using, for example, a multilayer structure of InGaN/GaN, GaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, or InAlGaN/InAlGaN. The barrier layer may be formed of a semiconductor material having a band gap higher than that of the well layer.

A second conductivity type semiconductor layer 515 is formed on the active layer 514 . The second conductivity-type semiconductor layer 515 may be implemented with a semiconductor compound, for example, a group II-IV and a group III-V compound semiconductor. The second conductivity-type semiconductor layer 515 may be formed as a single layer or multiple layers. When the second conductivity type semiconductor layer 515 is a p-type semiconductor layer, the second conductivity type dopant is a p-type dopant and may include Mg, Zn, Ca, Sr, Ba, or the like. The second conductivity type semiconductor layer 515 may be doped with a second conductivity type dopant. The second conductive semiconductor layer 515 may have a composition formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). The second conductivity-type semiconductor layer 515 may be formed of any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP.

The second conductive semiconductor layer 515 may include a superlattice structure, and the superlattice structure may include an InGaN/GaN superlattice structure or an AlGaN/GaN superlattice structure. The superlattice structure of the second conductivity-type semiconductor layer 515 can protect the active layer 514 by spreading the current included in the abnormal voltage.

Although the first conductivity type semiconductor layer 513 is an n-type semiconductor layer and the second conductivity type semiconductor layer 515 is a p-type semiconductor layer, the first conductivity type semiconductor layer 513 is a p-type semiconductor layer. layer, the second conductivity type semiconductor layer 515 may be formed as an n-type semiconductor layer, but is not limited thereto. A semiconductor having a polarity opposite to that of the second conductivity type, for example, an n-type semiconductor layer (not shown) may be formed on the second conductivity type semiconductor layer 515 . Accordingly, the light emitting structure 510 may be implemented with any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

A first electrode 516 is disposed on the first conductive semiconductor layer 513, and a second electrode 517 having a current diffusion layer is disposed on the second conductive semiconductor layer 515.

<light emitting chip>

6 is a cross-sectional view illustrating another example of a light emitting chip included in a light emitting device package according to an embodiment.

As shown in FIG. 6 , a description of the same configuration of a light emitting chip of another example will be omitted with reference to FIG. 5 . In another example of a light emitting chip, a contact layer 521 is disposed under the light emitting structure 510, a reflective layer 524 is disposed under the contact layer 521, and a support member 525 is disposed under the reflective layer 524. A protective layer 523 may be disposed around the reflective layer 524 and the light emitting structure 510 .

In the light emitting chip, a contact layer 521, a protective layer 523, a reflective layer 524, and a support member 525 may be disposed under the second conductive semiconductor layer 515.

The contact layer 521 may make ohmic contact with the lower surface of the light emitting structure 510 , for example, the second conductivity type semiconductor layer 515 . The contact layer 521 may be selected from among metal nitrides, insulating materials, and conductive materials, such as indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), and indium aluminum zinc oxide (IAZO). ), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), Ag, Ni, Al, Rh, Pd, Ir , Ru, Mg, Zn, Pt, Au, Hf, and optional combinations thereof. In addition, multilayers may be formed using the metal material and light-transmitting conductive materials such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, and ATO, for example, IZO/Ni, AZO/Ag, IZO/Ag/Ni, AZO/ It can be layered with Ag/Ni or the like. A current blocking layer may be further formed inside the contact layer 521 to correspond to the electrode 516 .

The protective layer 523 may be selected from metal oxides or insulating materials, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), and IGZO. (indium gallium zinc oxide), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), SiO ₂ , SiO _x , SiO _x N _y , It can be selectively formed from Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ . The protective layer 523 may be formed using a sputtering method or a deposition method, and may prevent a metal such as the reflective layer 524 from shorting the layers of the light emitting structure 510 .

The reflective layer 524 may include metal. For example, the reflective layer 524 may be formed of a material composed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, or a combination thereof. The reflective layer 524 may be formed larger than the width of the light emitting structure 510 to improve light reflection efficiency. A metal layer for bonding and a metal layer for thermal diffusion may be further disposed between the reflective layer 524 and the support member 525, but is not limited thereto.

The support member 525 is a base substrate, and is a metal such as copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), or copper-tungsten (Cu-W) or a carrier wafer (eg, Si, Ge, GaAs, ZnO, SiC). A bonding layer may be further formed between the support member 525 and the reflective layer 524 .

<Lighting system>

7 is a perspective view illustrating a display device including a light emitting device package according to an embodiment.

As shown in FIG. 7 , the display device 1000 of the embodiment includes a light guide plate 1041, a light source module 1031 providing light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), an optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, the light guide plate 1041, a light source module 1031, and a reflective member 1022. It may include the bottom cover 1011, but is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 may be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse light to form a surface light source. The light guide plate 1041 is made of a transparent material, for example, an acrylic resin such as PMMA (polymethyl metaacrylate), PET (polyethylene terephthlate), PC (poly carbonate), COC (cycloolefin copolymer), and PEN (polyethylene naphthalate) It may contain one of the resins.

The light source module 1031 provides light to at least one side of the light guide plate 1041 and ultimately serves as a light source of a display device.

The light source module 1031 includes at least one, and may directly or indirectly provide light from one side of the light guide plate 1041 . The light source module 1031 includes a substrate 1033 and a light emitting device package 110 according to an embodiment, and the light emitting device packages 110 may be disposed on the substrate 1033 in a plurality at regular intervals. there is.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1033 may include not only a general PCB, but also a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like, but is not limited thereto. The light emitting device package 110 may be directly disposed on a side surface of the bottom cover 1011 or on a heat dissipation plate.

The reflective member 1022 may be disposed below the light guide plate 1041 . The reflective member 1022 may improve luminance of the light unit 1050 by reflecting light incident on the lower surface of the light guide plate 1041 . The reflective member 1022 may be formed of, for example, PET, PC, PVC resin, etc., but is not limited thereto.

The bottom cover 1011 may accommodate the light guide plate 1041 , the light source module 1031 , and the reflective member 1022 . The bottom cover 1011 may include a storage unit 1012 having a box shape with an open upper surface, but is not limited thereto. The bottom cover 1011 may be combined with the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or non-metal material having good thermal conductivity, but is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and may include transparent first and second substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizer disposed on at least one surface of the display panel 1061 may be included. The display panel 1061 displays information by light passing through the optical sheet 1051 . The display device 1000 may be applied to various portable terminals, laptop computer monitors, laptop computer monitors, televisions, and the like.

The optical sheet 1051 may be disposed between the display panel 1061 and the light guide plate 1041 . The optical sheet 1051 may include at least one light-transmitting sheet. The optical sheet 1051 may include, for example, at least one of a diffusion sheet, at least one prism sheet, and a protection sheet. The diffusion sheet may include a function of diffusing incident light. The prism sheet may include a function of condensing incident light into a display area. The protective sheet may include a function of protecting the prism sheet.

<Lighting device>

8 is a cross-sectional view illustrating another example of a display device including a light emitting device package according to an embodiment.

As shown in FIG. 8 , a display device 1100 of another example includes a bottom cover 1152, a substrate 1120 on which a light emitting device package 110 is mounted, an optical member 1154, and a display panel 1155. can do.

The substrate 1120 and the light emitting device package 110 may be defined as a light source module 1160 . The bottom cover 1152 , at least one light source module 1160 , and the optical member 1154 may be defined as a light unit 1150 . The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto. The light source module 1160 may include a substrate 1120 and a plurality of light emitting device packages 110 arranged on the substrate 1120 .

Here, the optical member 1154 may include at least one of a lens, a diffusion plate, a diffusion sheet, a prism sheet, and a protective sheet. The diffusion plate may be made of a PC material or a poly methyl methacrylate (PMMA) material, and the diffusion plate may be removed. The diffusion sheet may diffuse incident light, the prism sheet may condense incident light into a display area, and the protective sheet may protect the prism sheet.

The optical member 1154 is disposed on the light source module 1060 and performs a surface light source, diffusion or condensing of the light emitted from the light source module 1060 .

The light emitting device package 110 according to the embodiment may be applied to a lighting unit, a pointing device, a lamp, a street light, a vehicle lighting device, a vehicle display device, and a smart watch as well as the display device, but is not limited thereto.

Features, structures, effects, etc. described in the embodiments above are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. illustrated in each embodiment can be combined or modified with respect to other embodiments by those skilled in the art in the field to which the embodiments belong. Therefore, contents related to these combinations and modifications should be construed as being included in the scope of the embodiments.

Although the above has been described centering on the embodiment, this is only an example and does not limit the embodiment, and those skilled in the art in the field to which the embodiment belongs may find various things not exemplified above to the extent that they do not deviate from the essential characteristics of the embodiment. It will be appreciated that variations and applications of branches are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be construed as being included in the scope of the embodiments set forth in the appended claims.

127a: first edge
127b: second corner
127c: third corner
127d: fourth corner
127e: first wire groove
127f: second wire groove
130: first lead frame
140: second lead frame
R1: first curvature
R2: second curvature
R3: third curvature
R4: fourth curvature
R5: fifth curvature
R6: sixth curvature

Claims (13)

a first lead frame;
A second lead frame spaced apart from the first lead frame in a first direction;
a body coupled to the first and second lead frames and having a cavity; and
Including a light emitting element mounted on the first lead frame,
The cavity includes first to fourth inner surfaces, and first to fourth corners between the first to fourth inner surfaces have a constant curvature,
The cavity includes at least one wire groove extending from at least one of the first to fourth corners,
A first direction from the center of curvature of the at least one wire groove to a point on the curved surface of the at least one wire groove is from the center of curvature of at least one of first to fourth edges where the at least one wire groove extends. A light emitting device package in a direction opposite to a second direction toward a point on at least one of the first to fourth edges of a curved surface.
According to claim 1,
The first and second inner surfaces face each other, the third and fourth inner surfaces face each other, the first edge is disposed between the first and third inner surfaces, and the second edge is disposed between the first and third inner surfaces. A light emitting device package disposed between first and fourth inner surfaces, the third edge disposed between the second and fourth inner surfaces, and the fourth edge disposed between second and third inner surfaces.
According to claim 2,
The first and second corners have first and second curvatures of 50 μm or more.
According to claim 3,
The first and second curvatures are the same light emitting device package.
According to claim 2,
The third and fourth edges have third and fourth curvatures of 50 μm or more.
According to claim 4,
Wherein the third and fourth curvatures have the same curvature.
According to claim 2,
The at least one wire groove portion includes a first wire groove portion disposed between the third corner and the fourth inner surface, and a portion of the second lead frame is exposed in the first wire groove portion.
According to claim 7,
The light emitting device package of claim 1 , wherein the first wire groove portion has a fifth curvature of 50 μm or more.
According to claim 7,
The first wire groove portion has a curvature smaller than the first to fourth corners of the light emitting device package.
According to claim 2,
The at least one wire groove portion includes a second wire groove portion disposed between the fourth edge and the second inner surface, and a portion of the first lead frame is exposed in the second wire groove portion.
According to claim 10,
The light emitting device package of claim 1 , wherein the second wire groove portion has a sixth curvature of 50 μm or more.
According to claim 10,
The second wire groove portion has a curvature smaller than the first to fourth corners of the light emitting device package.
A lighting device comprising the light emitting device package of any one of claims 1 to 12.

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