KR102480871B1 - 극자외 광원 - Google Patents

극자외 광원 Download PDF

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KR102480871B1
KR102480871B1 KR1020177000372A KR20177000372A KR102480871B1 KR 102480871 B1 KR102480871 B1 KR 102480871B1 KR 1020177000372 A KR1020177000372 A KR 1020177000372A KR 20177000372 A KR20177000372 A KR 20177000372A KR 102480871 B1 KR102480871 B1 KR 102480871B1
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radiation
pulse
target
light
modified
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KR20170030516A (ko
Inventor
예정 타오
존 톰. 4세 스튜워트
조던 주어
다니엘 브라운
제이슨 엠. 아찬드
알렉산더 에이. 샤프간스
마이클 에이. 퍼비스
앤드류 라포제
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에이에스엠엘 네델란즈 비.브이.
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Priority to KR1020227044754A priority Critical patent/KR102601556B1/ko
Publication of KR20170030516A publication Critical patent/KR20170030516A/ko
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0088—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam for preconditioning the plasma generating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H05G2/006—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state details of the ejection system, e.g. constructional details of the nozzle
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00—Energy generation of nuclear origin
    • Y02E30/10—Nuclear fusion reactors

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
KR1020177000372A 2014-07-07 2015-06-25 극자외 광원 Active KR102480871B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020227044754A KR102601556B1 (ko) 2014-07-07 2015-06-25 극자외 광원

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/325,153 2014-07-07
US14/325,153 US9357625B2 (en) 2014-07-07 2014-07-07 Extreme ultraviolet light source
PCT/US2015/037799 WO2016007312A2 (en) 2014-07-07 2015-06-25 Extreme ultraviolet light source

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020227044754A Division KR102601556B1 (ko) 2014-07-07 2015-06-25 극자외 광원

Publications (2)

Publication Number Publication Date
KR20170030516A KR20170030516A (ko) 2017-03-17
KR102480871B1 true KR102480871B1 (ko) 2022-12-22

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KR1020177000372A Active KR102480871B1 (ko) 2014-07-07 2015-06-25 극자외 광원
KR1020227044754A Active KR102601556B1 (ko) 2014-07-07 2015-06-25 극자외 광원

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US (3) US9357625B2 (enExample)
JP (2) JP6602320B6 (enExample)
KR (2) KR102480871B1 (enExample)
CN (2) CN110784981B (enExample)
TW (2) TWI705734B (enExample)
WO (1) WO2016007312A2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6021454B2 (ja) * 2011-10-05 2016-11-09 ギガフォトン株式会社 極端紫外光生成装置および極端紫外光生成方法
US9357625B2 (en) 2014-07-07 2016-05-31 Asml Netherlands B.V. Extreme ultraviolet light source
JP6899835B2 (ja) * 2016-02-10 2021-07-07 トルンプフ レーザーシステムズ フォー セミコンダクター マニュファクチャリング ゲゼルシャフト ミット ベシュレンクテル ハフツングＴＲＵＭＰＦ Ｌａｓｅｒｓｙｓｔｅｍｓ ｆｏｒ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ ＧｍｂＨ 光アイソレータを備えたドライバレーザ装置および該ドライバレーザ装置を備えたｅｕｖビーム生成装置
US10036963B2 (en) * 2016-09-12 2018-07-31 Cymer, Llc Estimating a gain relationship of an optical source
US9778022B1 (en) 2016-09-14 2017-10-03 Asml Netherlands B.V. Determining moving properties of a target in an extreme ultraviolet light source
US10149375B2 (en) * 2016-09-14 2018-12-04 Asml Netherlands B.V. Target trajectory metrology in an extreme ultraviolet light source
US10663866B2 (en) * 2016-09-20 2020-05-26 Asml Netherlands B.V. Wavelength-based optical filtering
US10299361B2 (en) * 2017-03-24 2019-05-21 Asml Netherlands B.V. Optical pulse generation for an extreme ultraviolet light source
CN110612482B (zh) * 2017-05-10 2022-04-26 Asml荷兰有限公司 激光产生的等离子体源
CN110692283B (zh) * 2017-05-30 2023-09-19 Asml荷兰有限公司 辐射源
WO2019081364A1 (en) 2017-10-26 2019-05-02 Asml Netherlands B.V. PLASMA CONTROL SYSTEM
CN108036930A (zh) * 2017-12-28 2018-05-15 长春长光精密仪器集团有限公司 一种透射光栅衍射效率的检测系统
JP7356439B2 (ja) * 2018-04-03 2023-10-04 エーエスエムエル ネザーランズ ビー．ブイ． 光ビームの空間変調
NL2023633A (en) 2018-09-25 2020-04-30 Asml Netherlands Bv Laser system for target metrology and alteration in an euv light source
NL2024823A (en) * 2019-02-19 2020-08-27 Asml Netherlands Bv Dose control for an extreme ultraviolet optical lithography system
TWI892982B (zh) * 2019-04-01 2025-08-11 荷蘭商Ａｓｍｌ荷蘭公司 極紫外（ｅｕｖ）光源、目標供應系統、及控制ｅｕｖ光源中轉換效率的方法
JP7434096B2 (ja) 2020-07-30 2024-02-20 ギガフォトン株式会社 極端紫外光生成システム、及び電子デバイスの製造方法
KR20220030382A (ko) 2020-08-28 2022-03-11 삼성전자주식회사 극자외선 노광 방법 및 이를 이용한 반도체 제조 방법
JP7780948B2 (ja) 2021-12-27 2025-12-05 ギガフォトン株式会社 極端紫外光生成装置及び電子デバイスの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040136417A1 (en) * 2002-05-07 2004-07-15 Webb R. Kyle Long delay and high TIS pulse stretcher
US20050248829A1 (en) * 2004-05-10 2005-11-10 Ray Sawin Electro-optic array interface
US20060255298A1 (en) * 2005-02-25 2006-11-16 Cymer, Inc. Laser produced plasma EUV light source with pre-pulse
US20070291350A1 (en) * 2006-06-14 2007-12-20 Cymer, Inc. Drive laser for EUV light source

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6693939B2 (en) * 2001-01-29 2004-02-17 Cymer, Inc. Laser lithography light source with beam delivery
US7916388B2 (en) 2007-12-20 2011-03-29 Cymer, Inc. Drive laser for EUV light source
US7415056B2 (en) * 2006-03-31 2008-08-19 Cymer, Inc. Confocal pulse stretcher
US7491954B2 (en) 2006-10-13 2009-02-17 Cymer, Inc. Drive laser delivery systems for EUV light source
US7928416B2 (en) * 2006-12-22 2011-04-19 Cymer, Inc. Laser produced plasma EUV light source
US7671349B2 (en) * 2003-04-08 2010-03-02 Cymer, Inc. Laser produced plasma EUV light source
JP3759066B2 (ja) * 2002-04-11 2006-03-22 孝晏 望月 レーザプラズマ発生方法およびその装置
US8654438B2 (en) 2010-06-24 2014-02-18 Cymer, Llc Master oscillator-power amplifier drive laser with pre-pulse for EUV light source
US7239686B2 (en) 2002-05-13 2007-07-03 Jettec Ab Method and arrangement for producing radiation
DE10251435B3 (de) * 2002-10-30 2004-05-27 Xtreme Technologies Gmbh Strahlungsquelle zur Erzeugung von extrem ultravioletter Strahlung
US6973164B2 (en) 2003-06-26 2005-12-06 University Of Central Florida Research Foundation, Inc. Laser-produced plasma EUV light source with pre-pulse enhancement
DE102004005242B4 (de) * 2004-01-30 2006-04-20 Xtreme Technologies Gmbh Verfahren und Vorrichtung zur plasmabasierten Erzeugung intensiver kurzwelliger Strahlung
CN101002305A (zh) * 2005-01-12 2007-07-18 株式会社尼康 激光等离子euv光源、靶材构件、胶带构件、靶材构件的制造方法、靶材的提供方法以及euv曝光装置
DE102005014433B3 (de) * 2005-03-24 2006-10-05 Xtreme Technologies Gmbh Verfahren und Anordnung zur effizienten Erzeugung von kurzwelliger Strahlung auf Basis eines lasererzeugten Plasmas
WO2006104956A2 (en) * 2005-03-25 2006-10-05 Massachusetts Institute Of Technology Compact, high-flux, short-pulse x-ray source
JP5176037B2 (ja) * 2005-05-30 2013-04-03 国立大学法人大阪大学 極端紫外光源用ターゲット
JP5156192B2 (ja) 2006-01-24 2013-03-06 ギガフォトン株式会社 極端紫外光源装置
WO2007121142A2 (en) 2006-04-12 2007-10-25 The Regents Of The University Of California Improved light source employing laser-produced plasma
JP4937643B2 (ja) * 2006-05-29 2012-05-23 株式会社小松製作所 極端紫外光源装置
US7830928B2 (en) * 2006-08-02 2010-11-09 Regents of the University of Colorado, a body corp Quasi-phase matching and quantum control of high harmonic generation in waveguides using counterpropagating beams
JP5358060B2 (ja) 2007-02-20 2013-12-04 ギガフォトン株式会社 極端紫外光源装置
JP5189301B2 (ja) * 2007-03-12 2013-04-24 オリンパス株式会社 レーザー走査型顕微鏡
US7876498B1 (en) * 2007-03-23 2011-01-25 Lockheed Martin Corporation Pulse-energy-stabilization approach and first-pulse-suppression method using fiber amplifier
WO2009140270A2 (en) * 2008-05-13 2009-11-19 The Regents Of The University Of California System and method for light source employing laser-produced plasma
JP5335298B2 (ja) * 2008-06-20 2013-11-06 ギガフォトン株式会社 極端紫外光源装置及び極端紫外光の生成方法
JP5426317B2 (ja) 2008-10-23 2014-02-26 ギガフォトン株式会社 極端紫外光光源装置
JP5368261B2 (ja) 2008-11-06 2013-12-18 ギガフォトン株式会社 極端紫外光源装置、極端紫外光源装置の制御方法
US8436328B2 (en) 2008-12-16 2013-05-07 Gigaphoton Inc. Extreme ultraviolet light source apparatus
JP5312959B2 (ja) 2009-01-09 2013-10-09 ギガフォトン株式会社 極端紫外光源装置
JP5638769B2 (ja) * 2009-02-04 2014-12-10 Hoya株式会社 反射型マスクブランクの製造方法及び反射型マスクの製造方法
US8462824B2 (en) * 2009-04-22 2013-06-11 The Regents Of The University Of Colorado Phase-matched generation of coherent soft and hard X-rays using IR lasers
JP5603135B2 (ja) 2009-05-21 2014-10-08 ギガフォトン株式会社 チャンバ装置におけるターゲット軌道を計測及び制御する装置及び方法
US9113540B2 (en) 2010-02-19 2015-08-18 Gigaphoton Inc. System and method for generating extreme ultraviolet light
JP5722061B2 (ja) * 2010-02-19 2015-05-20 ギガフォトン株式会社 極端紫外光源装置及び極端紫外光の発生方法
US9265136B2 (en) 2010-02-19 2016-02-16 Gigaphoton Inc. System and method for generating extreme ultraviolet light
JP5765730B2 (ja) * 2010-03-11 2015-08-19 ギガフォトン株式会社 極端紫外光生成装置
JP5666285B2 (ja) 2010-03-15 2015-02-12 ギガフォトン株式会社 再生増幅器、レーザ装置および極端紫外光生成装置
US9072153B2 (en) 2010-03-29 2015-06-30 Gigaphoton Inc. Extreme ultraviolet light generation system utilizing a pre-pulse to create a diffused dome shaped target
US8368039B2 (en) * 2010-04-05 2013-02-05 Cymer, Inc. EUV light source glint reduction system
US8648999B2 (en) * 2010-07-22 2014-02-11 Cymer, Llc Alignment of light source focus
US8462425B2 (en) 2010-10-18 2013-06-11 Cymer, Inc. Oscillator-amplifier drive laser with seed protection for an EUV light source
JP6054028B2 (ja) 2011-02-09 2016-12-27 ギガフォトン株式会社 レーザ装置および極端紫外光生成システム
JP2012191171A (ja) * 2011-02-25 2012-10-04 Gigaphoton Inc レーザ装置、それを備える極端紫外光生成装置およびレーザ光出力制御方法
JP2012199512A (ja) 2011-03-10 2012-10-18 Gigaphoton Inc 極端紫外光生成装置及び極端紫外光生成方法
US8604452B2 (en) * 2011-03-17 2013-12-10 Cymer, Llc Drive laser delivery systems for EUV light source
JP5758662B2 (ja) * 2011-03-23 2015-08-05 国立大学法人大阪大学 極端紫外光生成装置及び極端紫外光生成方法
US9516730B2 (en) 2011-06-08 2016-12-06 Asml Netherlands B.V. Systems and methods for buffer gas flow stabilization in a laser produced plasma light source
US9335637B2 (en) * 2011-09-08 2016-05-10 Kla-Tencor Corporation Laser-produced plasma EUV source with reduced debris generation utilizing predetermined non-thermal laser ablation
NL2009372A (en) * 2011-09-28 2013-04-02 Asml Netherlands Bv Methods to control euv exposure dose and euv lithographic methods and apparatus using such methods.
JP6021454B2 (ja) * 2011-10-05 2016-11-09 ギガフォトン株式会社 極端紫外光生成装置および極端紫外光生成方法
JP2013140771A (ja) 2011-12-09 2013-07-18 Gigaphoton Inc ターゲット供給装置
NL2010274C2 (en) * 2012-02-11 2015-02-26 Media Lario Srl Source-collector modules for euv lithography employing a gic mirror and a lpp source.
JP6134313B2 (ja) * 2012-04-27 2017-05-24 ギガフォトン株式会社 レーザシステム及び極端紫外光生成システム
DE102012209837A1 (de) * 2012-06-12 2013-12-12 Trumpf Laser- Und Systemtechnik Gmbh EUV-Anregungslichtquelle mit einer Laserstrahlquelle und einer Strahlführungsvorrichtung zum Manipulieren des Laserstrahls
US9341752B2 (en) * 2012-11-07 2016-05-17 Asml Netherlands B.V. Viewport protector for an extreme ultraviolet light source
CN103138149A (zh) * 2013-02-04 2013-06-05 中国科学院上海光学精密机械研究所 产生宽带可调谐相干极紫外或软x射线的装置
US8872143B2 (en) 2013-03-14 2014-10-28 Asml Netherlands B.V. Target for laser produced plasma extreme ultraviolet light source
US8680495B1 (en) * 2013-03-15 2014-03-25 Cymer, Llc Extreme ultraviolet light source
US9357625B2 (en) 2014-07-07 2016-05-31 Asml Netherlands B.V. Extreme ultraviolet light source

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040136417A1 (en) * 2002-05-07 2004-07-15 Webb R. Kyle Long delay and high TIS pulse stretcher
US20050248829A1 (en) * 2004-05-10 2005-11-10 Ray Sawin Electro-optic array interface
US20060255298A1 (en) * 2005-02-25 2006-11-16 Cymer, Inc. Laser produced plasma EUV light source with pre-pulse
US20070291350A1 (en) * 2006-06-14 2007-12-20 Cymer, Inc. Drive laser for EUV light source

Also Published As

Publication number Publication date
WO2016007312A3 (en) 2016-03-10
US10064261B2 (en) 2018-08-28
KR20230003425A (ko) 2023-01-05
TW201603650A (zh) 2016-01-16
CN106537511A (zh) 2017-03-22
JP6970155B2 (ja) 2021-11-24
TW202106118A (zh) 2021-02-01
US9826616B2 (en) 2017-11-21
JP2017526947A (ja) 2017-09-14
JP6602320B6 (ja) 2020-01-15
CN110784981B (zh) 2023-07-28
US20160255708A1 (en) 2016-09-01
TWI787648B (zh) 2022-12-21
CN110784981A (zh) 2020-02-11
KR102601556B1 (ko) 2023-11-10
JP2020003826A (ja) 2020-01-09
WO2016007312A2 (en) 2016-01-14
CN106537511B (zh) 2019-11-19
TWI705734B (zh) 2020-09-21
US9357625B2 (en) 2016-05-31
JP6602320B2 (ja) 2019-11-06
KR20170030516A (ko) 2017-03-17
US20160007434A1 (en) 2016-01-07
US20180124906A1 (en) 2018-05-03

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