KR102473825B1 - 직교 하지층 더미필을 갖는 오버레이 타겟 - Google Patents

직교 하지층 더미필을 갖는 오버레이 타겟 Download PDF

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KR102473825B1
KR102473825B1 KR1020217020062A KR20217020062A KR102473825B1 KR 102473825 B1 KR102473825 B1 KR 102473825B1 KR 1020217020062 A KR1020217020062 A KR 1020217020062A KR 20217020062 A KR20217020062 A KR 20217020062A KR 102473825 B1 KR102473825 B1 KR 102473825B1
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South Korea
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layer
overlay
dummyfill
pattern elements
target
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KR20210086716A (ko
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뉴리엘 아미르
가이 코헨
블라디미르 레빈스키
마이클 아델
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케이엘에이 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H01L21/0274—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020217020062A 2012-05-22 2013-05-21 직교 하지층 더미필을 갖는 오버레이 타겟 Active KR102473825B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261650269P 2012-05-22 2012-05-22
US61/650,269 2012-05-22
PCT/US2013/042089 WO2013177208A1 (en) 2012-05-22 2013-05-21 Overlay targets with orthogonal underlayer dummyfill
KR1020147016173A KR102272361B1 (ko) 2012-05-22 2013-05-21 직교 하지층 더미필을 갖는 오버레이 타겟

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020147016173A Division KR102272361B1 (ko) 2012-05-22 2013-05-21 직교 하지층 더미필을 갖는 오버레이 타겟

Publications (2)

Publication Number Publication Date
KR20210086716A KR20210086716A (ko) 2021-07-08
KR102473825B1 true KR102473825B1 (ko) 2022-12-02

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KR1020217020062A Active KR102473825B1 (ko) 2012-05-22 2013-05-21 직교 하지층 더미필을 갖는 오버레이 타겟
KR1020147016173A Active KR102272361B1 (ko) 2012-05-22 2013-05-21 직교 하지층 더미필을 갖는 오버레이 타겟

Family Applications After (1)

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KR1020147016173A Active KR102272361B1 (ko) 2012-05-22 2013-05-21 직교 하지층 더미필을 갖는 오버레이 타겟

Country Status (5)

Country Link
JP (2) JP6339067B2 (https=)
KR (2) KR102473825B1 (https=)
CN (1) CN103814429A (https=)
SG (1) SG2014008841A (https=)
WO (1) WO2013177208A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107533020B (zh) * 2015-04-28 2020-08-14 科磊股份有限公司 计算上高效的基于x射线的叠盖测量系统与方法
KR102344379B1 (ko) * 2015-05-13 2021-12-28 삼성전자주식회사 실딩 패턴을 갖는 반도체 소자
KR102454206B1 (ko) * 2016-03-14 2022-10-12 삼성전자주식회사 웨이퍼 정렬 마크 및 웨이퍼 정렬 마크의 오차 측정 방법
CN110546577B (zh) * 2017-04-28 2022-05-24 Asml荷兰有限公司 计量方法和设备以及相关联的计算机程序
US10677588B2 (en) * 2018-04-09 2020-06-09 Kla-Tencor Corporation Localized telecentricity and focus optimization for overlay metrology
CN115485824B (zh) * 2020-05-05 2024-04-16 科磊股份有限公司 用于高表面型态半导体堆叠的计量目标
KR102838579B1 (ko) 2020-12-10 2025-07-28 삼성전자주식회사 반도체 장치
KR102566129B1 (ko) * 2022-01-20 2023-08-16 (주) 오로스테크놀로지 모아레 패턴을 형성하는 오버레이 마크, 이를 이용한 오버레이 측정방법, 및 반도체 소자의 제조방법
KR102923174B1 (ko) * 2023-04-10 2026-02-06 (주)오로스테크놀로지 광 결정 층을 구비하는 오버레이 마크, 이를 이용한 오버레이 측정 방법, 측정 장치 및 반도체 소자의 제조방법, 광 결정 층을 최적화하는 방법
US20250272812A1 (en) * 2024-02-26 2025-08-28 Kla Corporation Side-by-side off-center die overlay target

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008503897A (ja) * 2004-06-23 2008-02-07 インテル コーポレイション 位置合わせ処理プロセスの改良された統合を提供する細長い構造物

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
JP2829211B2 (ja) * 1993-01-07 1998-11-25 株式会社東芝 合せずれ測定方法
JPH07226369A (ja) * 1994-02-09 1995-08-22 Nikon Corp アライメント方法及び装置
JP4038320B2 (ja) * 2000-04-17 2008-01-23 株式会社東芝 半導体集積装置
JP2002124458A (ja) * 2000-10-18 2002-04-26 Nikon Corp 重ね合わせ検査装置および重ね合わせ検査方法
US6716559B2 (en) * 2001-12-13 2004-04-06 International Business Machines Corporation Method and system for determining overlay tolerance
JP4525067B2 (ja) * 2003-12-12 2010-08-18 株式会社ニコン 位置ずれ検出用マーク
US7526749B2 (en) * 2005-10-31 2009-04-28 Kla-Tencor Technologies Corporation Methods and apparatus for designing and using micro-targets in overlay metrology
US7291562B2 (en) * 2005-12-09 2007-11-06 Yung-Tin Chen Method to form topography in a deposited layer above a substrate
NL2003404A (en) * 2008-09-16 2010-03-17 Asml Netherlands Bv Inspection method and apparatus, substrate, lithographic apparatus, lithographic processing cell and device manufacturing method.
US8804137B2 (en) * 2009-08-31 2014-08-12 Kla-Tencor Corporation Unique mark and method to determine critical dimension uniformity and registration of reticles combined with wafer overlay capability
NL2006228A (en) * 2010-03-17 2011-09-20 Asml Netherlands Bv Alignment mark, substrate, set of patterning devices, and device manufacturing method.
US9927718B2 (en) * 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008503897A (ja) * 2004-06-23 2008-02-07 インテル コーポレイション 位置合わせ処理プロセスの改良された統合を提供する細長い構造物

Also Published As

Publication number Publication date
WO2013177208A1 (en) 2013-11-28
KR20150013428A (ko) 2015-02-05
JP2018128699A (ja) 2018-08-16
JP6339067B2 (ja) 2018-06-06
JP6570018B2 (ja) 2019-09-04
SG2014008841A (en) 2015-01-29
JP2015520377A (ja) 2015-07-16
CN103814429A (zh) 2014-05-21
KR102272361B1 (ko) 2021-07-05
KR20210086716A (ko) 2021-07-08

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