JP6339067B2 - 直交下層ダミーフィルを有するオーバレイターゲット - Google Patents

直交下層ダミーフィルを有するオーバレイターゲット Download PDF

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Publication number
JP6339067B2
JP6339067B2 JP2015514130A JP2015514130A JP6339067B2 JP 6339067 B2 JP6339067 B2 JP 6339067B2 JP 2015514130 A JP2015514130 A JP 2015514130A JP 2015514130 A JP2015514130 A JP 2015514130A JP 6339067 B2 JP6339067 B2 JP 6339067B2
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Japan
Prior art keywords
overlay
pattern elements
target
segmented
dummy fill
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JP2015514130A
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Japanese (ja)
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JP2015520377A5 (https=
JP2015520377A (ja
Inventor
ヌリエル アミル
ヌリエル アミル
ガイ コーエン
ガイ コーエン
ウラジミール レヴィンスキ
ウラジミール レヴィンスキ
ミカエル アデル
ミカエル アデル
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KLA Corp
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KLA Corp
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Publication of JP2015520377A5 publication Critical patent/JP2015520377A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2015514130A 2012-05-22 2013-05-21 直交下層ダミーフィルを有するオーバレイターゲット Active JP6339067B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261650269P 2012-05-22 2012-05-22
US61/650,269 2012-05-22
PCT/US2013/042089 WO2013177208A1 (en) 2012-05-22 2013-05-21 Overlay targets with orthogonal underlayer dummyfill

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018090295A Division JP6570018B2 (ja) 2012-05-22 2018-05-09 オーバレイターゲット、オーバレイ計測を実行するシステム、及び方法

Publications (3)

Publication Number Publication Date
JP2015520377A JP2015520377A (ja) 2015-07-16
JP2015520377A5 JP2015520377A5 (https=) 2016-07-07
JP6339067B2 true JP6339067B2 (ja) 2018-06-06

Family

ID=49624297

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2015514130A Active JP6339067B2 (ja) 2012-05-22 2013-05-21 直交下層ダミーフィルを有するオーバレイターゲット
JP2018090295A Active JP6570018B2 (ja) 2012-05-22 2018-05-09 オーバレイターゲット、オーバレイ計測を実行するシステム、及び方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2018090295A Active JP6570018B2 (ja) 2012-05-22 2018-05-09 オーバレイターゲット、オーバレイ計測を実行するシステム、及び方法

Country Status (5)

Country Link
JP (2) JP6339067B2 (https=)
KR (2) KR102473825B1 (https=)
CN (1) CN103814429A (https=)
SG (1) SG2014008841A (https=)
WO (1) WO2013177208A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107533020B (zh) * 2015-04-28 2020-08-14 科磊股份有限公司 计算上高效的基于x射线的叠盖测量系统与方法
KR102344379B1 (ko) * 2015-05-13 2021-12-28 삼성전자주식회사 실딩 패턴을 갖는 반도체 소자
KR102454206B1 (ko) * 2016-03-14 2022-10-12 삼성전자주식회사 웨이퍼 정렬 마크 및 웨이퍼 정렬 마크의 오차 측정 방법
CN110546577B (zh) * 2017-04-28 2022-05-24 Asml荷兰有限公司 计量方法和设备以及相关联的计算机程序
US10677588B2 (en) * 2018-04-09 2020-06-09 Kla-Tencor Corporation Localized telecentricity and focus optimization for overlay metrology
CN115485824B (zh) * 2020-05-05 2024-04-16 科磊股份有限公司 用于高表面型态半导体堆叠的计量目标
KR102838579B1 (ko) 2020-12-10 2025-07-28 삼성전자주식회사 반도체 장치
KR102566129B1 (ko) * 2022-01-20 2023-08-16 (주) 오로스테크놀로지 모아레 패턴을 형성하는 오버레이 마크, 이를 이용한 오버레이 측정방법, 및 반도체 소자의 제조방법
KR102923174B1 (ko) * 2023-04-10 2026-02-06 (주)오로스테크놀로지 광 결정 층을 구비하는 오버레이 마크, 이를 이용한 오버레이 측정 방법, 측정 장치 및 반도체 소자의 제조방법, 광 결정 층을 최적화하는 방법
US20250272812A1 (en) * 2024-02-26 2025-08-28 Kla Corporation Side-by-side off-center die overlay target

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2829211B2 (ja) * 1993-01-07 1998-11-25 株式会社東芝 合せずれ測定方法
JPH07226369A (ja) * 1994-02-09 1995-08-22 Nikon Corp アライメント方法及び装置
JP4038320B2 (ja) * 2000-04-17 2008-01-23 株式会社東芝 半導体集積装置
JP2002124458A (ja) * 2000-10-18 2002-04-26 Nikon Corp 重ね合わせ検査装置および重ね合わせ検査方法
US6716559B2 (en) * 2001-12-13 2004-04-06 International Business Machines Corporation Method and system for determining overlay tolerance
JP4525067B2 (ja) * 2003-12-12 2010-08-18 株式会社ニコン 位置ずれ検出用マーク
US20050286052A1 (en) * 2004-06-23 2005-12-29 Kevin Huggins Elongated features for improved alignment process integration
US7526749B2 (en) * 2005-10-31 2009-04-28 Kla-Tencor Technologies Corporation Methods and apparatus for designing and using micro-targets in overlay metrology
US7291562B2 (en) * 2005-12-09 2007-11-06 Yung-Tin Chen Method to form topography in a deposited layer above a substrate
NL2003404A (en) * 2008-09-16 2010-03-17 Asml Netherlands Bv Inspection method and apparatus, substrate, lithographic apparatus, lithographic processing cell and device manufacturing method.
US8804137B2 (en) * 2009-08-31 2014-08-12 Kla-Tencor Corporation Unique mark and method to determine critical dimension uniformity and registration of reticles combined with wafer overlay capability
NL2006228A (en) * 2010-03-17 2011-09-20 Asml Netherlands Bv Alignment mark, substrate, set of patterning devices, and device manufacturing method.
US9927718B2 (en) * 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems

Also Published As

Publication number Publication date
WO2013177208A1 (en) 2013-11-28
KR20150013428A (ko) 2015-02-05
JP2018128699A (ja) 2018-08-16
JP6570018B2 (ja) 2019-09-04
SG2014008841A (en) 2015-01-29
JP2015520377A (ja) 2015-07-16
CN103814429A (zh) 2014-05-21
KR102272361B1 (ko) 2021-07-05
KR102473825B1 (ko) 2022-12-02
KR20210086716A (ko) 2021-07-08

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