KR102472111B1 - Variable low resistance line based electronic device and controlling thereof - Google Patents

Abstract

The present invention discloses a variable low-resistance line-based electronic device and a control method thereof. A variable low-resistance line-based electronic device according to an embodiment of the present invention includes a base including a spontaneously polarizable material; and a gate disposed adjacent to the base, wherein the base includes a first region and a second region having different coercive electric fields, and the second region is disposed outside the first region on a plane, The gate may be positioned to overlap the first region.

Description

Variable low resistance line based electronic device and control method thereof

The present invention relates to an electronic device using a variable low resistance line and a control method thereof.

As technology advances and people's interest in the convenience of life increases, attempts to develop various electronic products are becoming more active.

In addition, these electronic products are increasingly being miniaturized and integrated, and the places where they are used are increasing widely.

These electronic products include various electrical devices, such as CPUs, memories, and other various electrical devices. These base elements may include various types of electrical circuits.

For example, electrical devices are used in products in various fields, such as computers, smart phones, household sensor devices for IoT, and bio-electronic devices for ergonomics.

On the other hand, according to the recent speed of technological development and the rapid improvement of users' living standards, the use and application fields of these electric devices are rapidly increasing, and the demand thereof is also increasing accordingly.

In accordance with this trend, there is a limit to implementing and controlling electronic circuits that can be easily and quickly applied to various electrical devices that are commonly used.

Meanwhile, memory devices, particularly non-volatile memory devices, are widely used as information storage and/or processing devices for various electronic devices such as computers, cameras, and communication devices.

These memory devices are being developed a lot, especially in terms of lifespan and speed. Most of the tasks are to secure memory lifespan and speed, but there is a limit to implementing a memory device with improved memory lifespan and speed.

The present invention can provide a variable low-resistance line-based electronic device and a control method thereof that can be easily applied to various uses.

One embodiment of the present invention, a base comprising a spontaneously polarizable material; and a gate disposed adjacent to the base, wherein the base includes a first region and a second region having different coercive electric fields, and the second region is disposed outside the first region on a plane, The gate initiates a variable low-resistance line-based electronic device positioned overlying the first region.

In this embodiment, the coercive electric field of the second region may be greater than that of the first region.

In this embodiment, when an electric field greater than the coercive electric field of the first region and smaller than that of the second region is applied to the base through the gate, the first fluctuation forms a passage of current only in the first region. A low-resistance line can be formed.

In this embodiment, when an electric field greater than the coercive electric field of the second region is applied to the base through the gate, a second variable low-resistance line may be formed only in the second region.

In the present embodiment, the first electrode positioned to contact the first variable low-resistance line and the second variable low-resistance line; and a plurality of second electrodes positioned to contact each of the first variable low-resistance line and the second variable low-resistance line.

In this embodiment, on a plane, the second region may surround the first region.

Another embodiment of the present invention relates to a variable low-resistance line-based electronic device including a base including a spontaneously polarizable material and a gate disposed adjacent to the base by applying a voltage to the gate to form an electric field in the base. Applying; and changing the polarization direction of the spontaneously polarizable material by the electric field to form a variable low-resistance line through which current can flow to the base, wherein the base includes a first region having a coercive electric field different from each other and Disclosed is a method for controlling an electronic device based on a variable low-resistance line including a second region, wherein the variable low-resistance line is selectively formed only in the first region or the second region according to the magnitude of the electric field applied to the base. do.

In this embodiment, when the coercive electric field of the second region is greater than the coercive electric field of the first region and the magnitude of the coercive electric field is greater than that of the first region and smaller than that of the second region, the coercive electric field of the second region The variable low-resistance line may be formed only in the first region.

In this embodiment, when the coercive electric field of the second region is greater than the coercive electric field of the first region and the magnitude of the coercive electric field is greater than that of the second region, the variable low-resistance line only in the second region can be formed.

In this embodiment, on a plane, the second region may be formed to surround the first region, and the gate may be positioned to overlap the first region.

Other aspects, features and advantages other than those described above will become apparent from the following drawings, claims and detailed description of the invention.

An electronic device using a variable low-resistance line and a control method thereof according to the present invention can be easily applied to various applications.

1 is a schematic plan view showing an electronic device according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along line II of FIG. 1 .
FIG. 3 is an enlarged view of K in FIG. 2 .
4A to 4C are diagrams for explaining a method for controlling a current path range in relation to the electronic device of FIG. 1 .
5 is a schematic plan view illustrating an electronic device according to an embodiment of the present invention.
6 is a cross-sectional view taken along line II-II of FIG. 5;
7 is a schematic plan view illustrating an electronic device according to still another embodiment of the present invention.
8 is a cross-sectional view taken along line III-III of FIG. 7 .
9 is a graph showing a relationship between voltage and current between a first polarization region and a variable low-resistance line.
10 is a schematic plan view illustrating an electronic device according to still another embodiment of the present invention.
11 to 14 are cross-sectional views taken along line IV-IV of FIG. 10 .

Hereinafter, the configuration and operation of the present invention will be described in detail with reference to embodiments of the present invention shown in the accompanying drawings.

Since the present invention can apply various transformations and have various embodiments, specific embodiments will be illustrated in the drawings and described in detail in the detailed description. Effects and features of the present invention, and methods for achieving them will become clear with reference to the embodiments described later in detail together with the drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various forms.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and when describing with reference to the drawings, the same or corresponding components are assigned the same reference numerals, and overlapping descriptions thereof will be omitted. .

In the following embodiments, terms such as first and second are used for the purpose of distinguishing one component from another component without limiting meaning.

In the following examples, expressions in the singular number include plural expressions unless the context clearly dictates otherwise.

In the following embodiments, terms such as include or have mean that features or components described in the specification exist, and do not preclude the possibility that one or more other features or components may be added.

In the drawings, the size of components may be exaggerated or reduced for convenience of description. For example, since the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of description, the present invention is not necessarily limited to the illustrated bar.

In the following embodiments, the x-axis, y-axis, and z-axis are not limited to the three axes of the Cartesian coordinate system, and may be interpreted in a broad sense including these. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may refer to different directions that are not orthogonal to each other.

When an embodiment is otherwise implementable, a specific process sequence may be performed differently from the described sequence. For example, two processes described in succession may be performed substantially simultaneously, or may be performed in an order reverse to the order described.

1 is a plan view for specifically explaining a method for controlling a current path range using an electric field according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line II in FIG. 1, and FIG. 3 is K in FIG. This is an enlarged view of the part.

Referring to FIGS. 1 and 2 , the electronic device 10 of this embodiment may include an active layer 11 , an applied electrode 12 , and a variable low resistance line VL.

The active layer 11 may include a spontaneously polarizable material. For example, the active layer 11 may include an insulating material and a ferroelectric material. That is, the active layer 11 may include a material having spontaneous electric polarization (electric dipole) that can be reversed in the presence of an electric field.

As an optional embodiment, the active layer 11 may include a perovskite-based material, for example, BaTiO3, SrTiO3, BiFe3, PbTiO3, PbZrO3, and SrBi2Ta2O9.

In addition, as another example, the active layer 11 has an ABX3 structure, A may include an alkyl group of CnH2n+1, and at least one material selected from inorganic materials such as Cs and Ru capable of forming a perovskite solar cell structure, and B may include one or more materials selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 11 is CH3NHPbI3, CH3NHPbIxCl3-x, MAPbI3, CH3NHPbIxBr3-x, CH3NHPbClxBr3-x, HC(NH2)2PbI3, HC(NH2)2PbIxCl3-x, HC(NH2)2PbIxBr3-x, HC(NH2) 2PbClxBr3-x, (CH3NH3)(HC(NH2)2)1-yPbI3, (CH3NH3)(HC(NH2)2)1-yPbIxCl3-x, (CH3NH3)(HC(NH2)2)1-yPbIxBr3-x, or (CH3NH3)(HC(NH2)2)1-yPbClxBr3-x (0=x, y≤=1).

Since the active layer 11 may be formed using various other ferroelectric materials, a description of all examples thereof will be omitted. In addition, when forming the active layer 11, ferroelectric materials may be doped with various other materials to include additional functions or improve electrical characteristics.

The active layer 11 has spontaneous polarization and can control the degree and direction of polarization according to the application of an electric field. In addition, the active layer 11 may maintain a polarized state even when the applied electric field is removed.

The applying electrode 12 may be formed to apply an electric field to the active layer 11 , and may apply, for example, a voltage to the active layer 11 .

As an optional embodiment, the application electrode 12 may be formed to contact the upper surface of the active layer 11 .

In addition, the application electrode 12 may be formed to apply voltages of various sizes to the active layer 11 and to control the voltage application time.

As an alternative embodiment, the applying electrode 12 may be a gate electrode.

For example, the application electrode 12 may be electrically connected to a power source (not shown) or a power controller.

The applying electrode 12 may include various materials and may include a material having high electrical conductivity. For example, the application electrode 12 may be formed using various metals, and may be formed to contain aluminum, chromium, titanium, tantalum, molybdenum, tungsten, neodymium, scandium, or copper. Alternatively, it may be formed using an alloy of these materials or a nitride of these materials.

Also, as an optional embodiment, the applied electrode 12 may include a laminate structure.

Although not shown, as an optional embodiment, one or more insulating layers may be further disposed between the applying electrode 12 and the active layer 11 .

The variable low-resistance line VL is a region formed in the active layer 11 and is a region through which current can flow. Also, as shown in FIG. 1 , it is formed as a current path having a linear loop around the applying electrode 12 . It can be.

Specifically, the variable low-resistance line VL is a region in which the electrical resistance is lower than other regions adjacent to the variable low-resistance line VL among the regions of the active layer 11 .

In addition, after the variable low resistance line VL is formed through the applying electrode 12, even if the electric field through the applying electrode 12 is removed, for example, even if the voltage is removed, the polarization state of the active layer 11 remains. Since the variable low-resistance line VL is maintained, a state in which a current path is formed can be maintained.

Through this, various electronic devices can be configured.

The variable low-resistance line VL has a height HVL, and this height HVL may correspond to the entire thickness of the active layer 11 .

The height HVL of the variable low-resistance line VL may be proportional to the strength of the electric field applied through the applying electrode 12, for example, the magnitude of the voltage. At least, the magnitude of this electric field may be greater than the intrinsic coercive electric field of the active layer 11 .

The variable low-resistance line VL is a region formed when a voltage is applied to the active layer 11 through the applying electrode 12, and can be varied, for example, generated, extinguished, or moved through the control of the applied electrode 12. .

The active layer 11 may include a first polarization region 11R having a first polarization direction, and the variable low-resistance line VL may be formed at a boundary of the first polarization region 11R.

In addition, the active layer 11 may include a second polarization region 11F having a second polarization direction adjacent to the first polarization region 11R, and the variable low-resistance line VL is such a second polarization region ( 11F) may be formed at the boundary. The second direction may be at least a direction different from the first direction, and may be, for example, a direction opposite to the first direction.

For example, the variable low-resistance line VL may be formed at a boundary between the first polarization region 11R and the second polarization region 11F.

The variable low-resistance line VL may have a width WVL between two opposing variable low-resistance lines VL, which may be proportional to a moving distance of the variable low-resistance line VL. Yes, which will be described later.

As an alternative embodiment, as shown in FIG. 3 , the variable low-resistance line VL may have a predetermined planar thickness TVL, which may be +/−0.2 nm around 0.3 nm.

4A to 4C are diagrams for explaining a method of controlling a current path range for the electronic device of FIG. 1 .

Referring to FIG. 4A , the active layer 11 may include a first polarization region 11R having a first polarization direction. The first polarization region 11R may be formed by the characteristics of the material constituting the active layer 11 itself. As an optional embodiment, a polarization state of the active layer 11 as shown in FIG. 4A may be formed by applying an initialization electric field through the applying electrode 12 .

Then, referring to FIG. 4B , a second polarization region 11F is formed in the active layer 11 . As a specific example, the second polarization region 11F may be first formed in an area overlapping at least with the applying electrode 12 to correspond to the width of the applying electrode 12 .

It is larger than the coercive electric field of the active layer 11 through the applied electrode 12 and has a size sufficient to allow the height HVL of the second polarization region 11F to correspond to at least the entire thickness of the active layer 11. An electric field may be applied to the active layer 11 .

By applying an electric field through the applying electrode 12, the polarization direction of one region of the first polarization region 11R of the active layer 11 may be changed into the second polarization region 11F.

As an alternative embodiment, the growth rate of the second polarization region 11F in the height (HVL) direction may be very fast, for example, it may grow with a speed of about 1 km/sec (sec).

Then, if the electric field is continuously maintained through the applying electrode 12, that is, as time passes, the second polarization region 11F moves in the horizontal direction H, that is, in the direction orthogonal to the height HVL, and increases in size. can That is, a partial region of the first polarization region 11R of the active layer 11 may be gradually converted into the second polarization region 11F. According to an embodiment, the converted second polarization region 11F is the active layer (11) It may be formed throughout the entire thickness and extend from the lower portion of the applying electrode 12 in the horizontal direction (H).

As an alternative embodiment, the growth rate of the second polarization region 11F in the horizontal direction H may be very fast, for example, it may grow at a speed of 1 m/sec (sec).

Through this, the size of the variable low-resistance line VL can be controlled. This size corresponds to, for example, the width WVL in one direction of the second polarization region 11F and the growth distance of the second polarization region 11F. Therefore, it can be proportional to the growth rate and the holding time of the electric field. For example, the growth distance may be proportional to the product of the growth rate and the holding time of the electric field.

In addition, the growth rate of the second polarization region 11F may be proportional to the sum of the growth rate in the height (HVL) direction and the growth rate in the horizontal direction (H).

Therefore, the size of the variable low-resistance line VL can be adjusted as desired by controlling the holding time of the electric field.

Specifically, as shown in FIG. 4C , the second polarization region 11F spreads and becomes large, and accordingly, the variable low-resistance line VL may also move in a direction away from the applied electrode 12 .

In this embodiment, a second polarization region having a second polarization direction different from the first polarization direction is formed in the active layer by applying an electric field to the active layer through an applied electrode, and at the boundary between the first polarization region and the second polarization region A corresponding variable low-resistance line can be formed. Such a variable low-resistance line is a region of low resistance, that is, a reduced resistance, and can be a path of current, so that an electronic device can be easily formed.

In addition, in this embodiment, the height of the variable low-resistance line can be determined by controlling the magnitude of the electric field through the applied electrode, for example, by controlling the magnitude of the voltage, and specifically controlled to have a height corresponding to the entire thickness of the active layer. can do.

In addition, the size of the variable low-resistance line, for example, the width, can be determined by controlling the time for maintaining the electric field through the applied electrode. Through the control of the size of the variable low-resistance line, the size of the current flow path can be easily controlled.

In addition, since the polarization state of the polarization region is maintained even when the electric field through the applied electrode is removed, the current path can be easily maintained. Resistance of the resistance line may be lowered so that current may not flow.

Through this, it is possible to control the extinction of the path of the current, and as a result, it is possible to easily control the flow of the current.

5 is a plan view of a variable low-resistance line electronic device according to an embodiment of the present invention, and FIG. 6 is a cross-sectional view taken along line II-II of FIG. 5 .

5 and 6 , the variable low resistance line electronic device 100 is a memory device including a base 110, a gate 120, a first electrode 131 and a second electrode 132. can

The base 110 may include the above-described active layer material, for example, a spontaneous polarization material. For example, the base 110 may include an insulating material and may include a ferroelectric material. That is, the base 110 may include a material having a spontaneous electric polarization (electric dipole) that can be reversed in the presence of an electric field.

As an optional embodiment, the base 110 may include a perovskite-based material, for example, BaTiO3, SrTiO3, BiFe3, PbTiO3, PbZrO3, and SrBi2Ta2O9.

In addition, as another example, the base 110 has an ABX3 structure, A may include an alkyl group of CnH2n+1, and one or more materials selected from inorganic materials such as Cs and Ru capable of forming a perovskite solar cell structure, and B may include one or more materials selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the base 110 is CH3NHPbI3, CH3NHPbIxCl3-x, MAPbI3, CH3NHPbIxBr3-x, CH3NHPbClxBr3-x, HC(NH2)2PbI3, HC(NH2)2PbIxCl3-x, HC(NH2)2PbIxBr3-x, HC(NH2) 2PbClxBr3-x, (CH3NH3)(HC(NH2)2)1-yPbI3, (CH3NH3)(HC(NH2)2)1-yPbIxCl3-x, (CH3NH3)(HC(NH2)2)1-yPbIxBr3-x, or (CH3NH3)(HC(NH2)2)1-yPbClxBr3-x (0=x, y≤=1).

Since the base 110 may be formed using various other ferroelectric materials, a description of all examples thereof will be omitted. In addition, when forming the base 110, ferroelectric materials may be doped with various other materials to include additional functions or improve electrical characteristics.

The base 110 has spontaneous polarization and can control the degree and direction of polarization according to the application of an electric field. In addition, the base 110 may maintain a polarized state even when the applied electric field is removed.

The base 110 may include a first polarization region 110R and a second polarization region 110F positioned adjacent to each other in the X-Y plane direction. The first polarization region 110R may have polarization in a first direction, and the first direction is the thickness direction of the base 110, that is, the first polarization region 110R and the second polarization region 110F are It may be in the Z-direction perpendicular to the direction of placement.

The second polarization region 110F is adjacent to the first polarization region 110R in a direction perpendicular to the thickness, that is, in an X-Y plane direction. It may have polarization aligned in an opposite second direction.

A gate 120 may be positioned on the second polarization region 110F. Although not shown in the drawing, the gate 120 may be connected to a separate device to receive a gate signal.

The polarization of the second polarization region 110F in a direction different from that of the first polarization region 110R, for example, in an opposite direction, is made possible by the voltage applied to the gate 120 .

The variable low-resistance line 140 may be formed between the first polarization region 110R and the second polarization region 110F having polarizations in opposite directions. The variable low-resistance line 140 as described above becomes a region having a very low resistance compared to the first polarization region 110R and/or the second polarization region 110F, and current may flow through this region. .

Such variable low-resistance line 140 may be formed according to the following embodiment.

First, the base 110 including the spontaneously polarizable material may have polarization in the first direction as a whole. The entire base 110 is not necessarily limited to having polarization in the first direction, and at least a certain area of the base 110 facing the gate 120 may have polarization in the first direction. Optionally, polarization in the first direction may be formed by applying an initialization electric field to the gate 120 .

In this state, as a first voltage is applied to the gate 120 for a first time and an electric field is applied to the base 110 through the gate 120, a certain area opposite to the gate 120 is polarized in the second direction. It will change. The electric field applied to the gate 120 to change the polarization direction may be controlled by the first voltage, that is, the first voltage is applied such that a coercive electric field greater than the coercive electric field of the spontaneously polarizable material forming the base 110 is applied. can be added.

The area of the second polarization region 110F thus formed may be determined in proportion to the first time when the first voltage is applied to the gate 120 .

Accordingly, in order to form the second region 12 having a desired area and/or size, an appropriate gate voltage, time, and thickness of the second region 12 for the corresponding ferroelectric material may be determined in advance through experiments and/or calculations. .

When the polarization direction of the second polarization region 110F changes from the first direction to the second direction, the first polarization region 110R having polarization in the first direction and the second polarization region 110F having polarization in the second direction ), a variable low-resistance line 140 having a predetermined width may be formed. The variable low-resistance line 140 may be formed around the gate 120 . The variable low-resistance line 140 may have a width of about 0.3 nm, but is not necessarily limited thereto, and may have a width of +/−0.2 nm centered on 0.3 nm.

9 illustrates a state in which current changes as voltage is increased in the first polarization region and the variable low-resistance line. Since the resistance of the variable low-resistance line 140 is very small compared to that of the first polarization region 110R, it can be seen that current flows smoothly when voltage is applied. Although not shown in the drawing, since the resistance of the variable low-resistance line 140 is very small compared to that of the second polarization region 110F, current can flow smoothly therethrough.

The variable low-resistance line 140 formed as described above may not be erased over time.

The first electrode 131 and the second electrode 132 are placed in contact with the variable low-resistance line 140 thus formed. In this case, current may flow from the first electrode 131 to the second electrode 132 through the variable low-resistance line 140 . Therefore, data can be written at this time, and can be read as 1, for example. According to an embodiment, the first electrode 131 may be a source and the second electrode 132 may be a drain, but the source and drain may be interchanged. This can be applied as it is to all embodiments of the present specification.

Optionally, the voltage applied to the variable low-resistance line 140 and the gate 120 can be erased by making the polarization direction of the second polarization region 110F the same as that of the first polarization region 110R. .

That is, the polarization direction of the second polarization region 110F may return to the first direction by applying the second voltage to the gate 120 . Thereafter, a second voltage may be maintained for a second time to grow a region in which the polarization is changed in the first direction in a planar direction, and the region in which the polarization is changed in the first direction passes through the variable low-resistance line 140 to form the first When extended to the polarization region 110R, the variable low-resistance line 140 may disappear. In this case, current cannot flow from the first electrode 131 to the second electrode 132, so data can be erased at this time and can be read as 0.

In this case, the second voltage may be a voltage different from the first voltage, and may have the same magnitude as the first voltage and a voltage of opposite polarity according to an embodiment. The second time period may be at least equal to or longer than the first time period. That is, the variable low-resistance line 140 may be extinguished by applying the second voltage for a second time period equal to or longer than the first time period so that the first polarization region 110R sufficiently grows past the variable low-resistance line 140 .

The variable low-resistance line electronic device formed as described above can be used as a non-volatile memory device because the variable low-resistance line 140 can maintain its state even if power to the gate 120 is turned off.

Since the variable low-resistance line memory device can write/erase more than about 1012 times, it can have a memory life span of about 107 times or more compared to memory devices based on conventional semiconductor devices.

As for the memory speed, the variable low-resistance line memory device can be about 10 −9 sec, so the memory speed can be increased by about 10 6 times compared to memory devices based on conventional semiconductor devices.

As such, the variable low-resistance line memory device may be a memory device having very excellent speed and lifespan.

In the case of conventional ferroelectric memory, there is a limit to reducing the size of a ferroelectric element because it uses ferroelectric polarization, but the variable low resistance line memory device does not directly use polarization and uses only the characteristics of a low resistance line, so the degree of integration It has the advantage of being higher.

In addition, since the position where the variable low-resistance line 140 is formed can be adjusted according to the gate voltage and/or application time, various memory devices can be designed and thinner than conventional ferroelectric memory devices using ferroelectrics. can achieve In addition, since the degree of freedom in memory design is increased, there is an advantage in that the degree of integration of devices can be increased.

As shown in FIG. 5, the variable low-resistance line 140 formed in this way may be formed in a closed loop shape centered on the gate 120, and the first electrode 131 and the second electrode are part of the closed loop. By disposing 132, the number of lines connecting the first electrode 131 and the second electrode 132 may be two. However, it is not necessarily limited thereto, and if the gate is located on one side of the base in the planar direction and the first electrode and the second electrode are disposed on the other two adjacent sides, the variable low-resistance line is a single line connecting the first electrode and the second electrode. can be a line of

The first electrode 131 and the second electrode 132 as described above may be an electrode structure formed by being patterned on the base 110, but the present invention is not necessarily limited thereto, and although not shown in the drawings, the base It may be in contact with the variable low-resistance line 140 through a via hole formed in the insulating film covering (110).

FIG. 7 is a schematic plan view illustrating an electronic device according to another embodiment of the present invention, and FIG. 8 is a cross-sectional view taken along line III-III of FIG. 7 .

Referring to FIGS. 7 and 8 , the electronic device 200 of this embodiment includes a base 210, a gate 220, a variable low-resistance line 240, a first electrode 231 and a second electrode 232. can do.

For convenience of explanation, it will be described focusing on different points from the above-described embodiment.

The first electrode 231 and the second electrode 232 may be formed on the base 210, for example, on a surface of the base 210 on which the gate 220 is formed so as to be spaced apart from the gate 220. can be formed on the opposite side.

The gate 220 may be formed on an upper surface of the base 210 , and the first electrode 231 and the second electrode 232 may be formed on a lower surface of the base 210 .

As an optional embodiment, the first electrode 231 and the second electrode 232 may be formed to contact the base 210 .

The first electrode 231 and the second electrode 232 may be formed using various conductive materials.

A description of the material forming the first electrode 231 and the second electrode 232 may be the same as or modified from that described in the foregoing embodiment, and thus a detailed description thereof will be omitted.

Referring to FIG. 8 , when a voltage is applied to the base 210 through the gate 220 , at least one region of the base 210 may include the second polarization region 210F.

The variable low-resistance line VL may be formed in a region corresponding to the side of the boundary of the second polarization region 210F, and referring to FIG. can be formed as

In addition, the variable low-resistance line 240 may be formed to correspond to the entire side surface of the boundary line of the second polarization region 210F, may have a thickness in a direction away from the side surface of the second polarization region 210F, and selectively As an example, this thickness may be +/−0.2 nm centered on 0.3 nm.

The variable low-resistance line 240 formed at the boundary of the second polarization region 210F of the base 210 may change to a region having lower resistance than other regions of the base 210 . For example, the variable low-resistance line 240 has a lower resistance than the second polarization region 210F of the base 210 and the first polarization region 210R of the base 210 around the variable low-resistance line 240. can have

Through this, the variable low-resistance line 240 may form a passage of current.

As an optional embodiment, the variable low-resistance line 240 may correspond to one region of a plurality of domain walls provided in the base 210 .

In addition, the variable low-resistance line 240 may be continuously maintained when the polarization state of the second polarization region 210F is maintained. That is, even if the voltage applied to the base 210 through the gate 220 is removed, the state of the variable low-resistance line 240, that is, the low-resistance state can be maintained.

A passage of current may be formed through the variable low-resistance line 240 .

In addition, as a specific example, the first electrode 231 and the second electrode 232 are formed to correspond to the variable low resistance line 240, and for example, the first electrode 231 and the second electrode 232 are spaced apart from each other. It may be arranged to contact the lower surface of the variable low-resistance line 240 while remaining.

Through this, current may flow through the first electrode 231 and the second electrode 232 .

In the electronic device 200 of this embodiment, the gate 220 is formed on one surface of the base 210 and the first and second electrodes 231 and 232 are formed on the other surface, so that precise patterning and miniaturization can be easily performed. Margin and degree of freedom can be increased.

10 is a schematic plan view illustrating an electronic device according to another embodiment of the present invention, and FIGS. 11 to 14 are cross-sectional views taken along line IV-IV of FIG. 10 .

Referring to the drawings, the electronic device 300 of this embodiment includes a base 310, a gate 320, a first electrode 331, a plurality of second electrodes 332a and 332b, and a plurality of variable low-resistance lines 341. , 342).

Like the above-described embodiments, the base 310 may include a spontaneously polarizable material. Therefore, the degree and direction of polarization can be controlled according to the application of the electric field, and the base 310 can maintain the polarization state even when the applied electric field is removed.

The gate 320 may be formed to apply an electric field to the base 310, and for example, a voltage may be applied to the base 310.

As an optional embodiment, the gate 320 may be formed to contact the upper surface of the base 310 . In addition, the gate 320 may be formed to apply voltages of various sizes to the base 310 and to control the voltage application time.

Meanwhile, the base 310 may include a first region 312 and a second region 314 having different coercive electric fields. For example, the coercive electric field of the second region 314 may be greater than that of the first region 312, and the second region 314 may be located outside the first region 312 on a plane. . For example, on a plane, the second region 314 may surround the first region 312 . Alternatively, the first region 312 and the second region 314 may be arranged in a line, and the second region 314 may be disposed on both sides of the first region 312 . In this case, the gate 320 may overlap the first region 312 .

When the polarization direction is changed by applying an opposite electric field to a ferroelectric having a first polarization direction, the magnitude of the opposite electric field when the residual polarization of the ferroelectric becomes zero is called the coercive electric field. The magnitude of the electric field required to change it increases. Therefore, since the coercive electric field of the first region 312 is smaller than that of the second region 314, in order to change the polarization direction of the second region 314, it is easier to change the polarization direction of the first region 312. A larger electric field is required.

For example, as shown in FIG. 11 , the first region 312 includes a first polarization region 312R having a first polarization direction, and the second region 314 includes a first polarization region 314R having a first polarization direction. ), the gate 320 applies a coercive electric field greater than the coercive electric field of the first region 312 and smaller than the coercive electric field of the second region 314 to the base 310 through the gate 320. When voltage is applied, as shown in FIG. 12 , the polarization direction of the second region 314 does not change, and the second polarization region 312F is formed only in the first region 312 .

Accordingly, the formation position of the first variable low-resistance line 341 may be limited within the first region 312 . That is, a domain region in which a polarization state changes in proportion to the application time of the electric field may be limited, and thus, an advantage of not having to consider the variable of the electric field application time may be provided when controlling the electronic device 300 .

As another example, in the state shown in FIG. 11 , when the second voltage is applied to the gate 320 in order to apply an electric field greater than the coercive electric field of the second region 314 to the base 310 through the gate 320, first The polarization direction of the first region 312 is changed so that the first region 312 includes the second polarization region 312F, and as the second polarization region 314F is also formed in the second region 314, the second region 312 is formed. The second variable low-resistance line 342 may be formed only in the region 314 .

Meanwhile, in the state shown in FIG. 13 , when an opposite electric field for returning the first region 312 to the first polarized region 312R state is applied to the base 310 by applying a third voltage to the gate 320, FIG. As shown in FIG. 14 , a first variable low-resistance line 341 may be additionally formed in the first region 312 . At this time, the third voltage applied to the gate 320 applies an electric field greater than the coercive field of the first region 312 and smaller than the coercive electric field of the second region 314 to the base 310, but the first region 312 In order to return the second region 312F of ) to the first region 312R, it may have a polarity opposite to that of the first voltage applied in FIG. 12 .

That is, according to the present invention, the base 310 includes a first region 312 and a second region 314 having different coercive electric fields, thereby adjusting the magnitude of the voltage applied to the gate 320 to generate the first region 312 and the second region 314. Since the formation positions of the variable low-resistance line 341 and the second variable low-resistance line 342 may be restricted within a specific region, control of the electronic device 300 may be facilitated.

Referring back to FIG. 10 , the first electrode 331 may be formed over the first region 312 and the second region 314 . Further, the second electrodes 332a and 332b include the 2-1 electrode 332a electrically connected only to the first variable low-resistance line 341 and the 2-2 electrode electrically connected only to the second variable low-resistance line 342. (332b).

As described above, by adjusting the magnitude of the voltage applied to the gate 320, the first variable low-resistance line 341 and the second variable low-resistance line 342 may be formed, and through this, the first electrode ( 331) and the second electrodes 332a and 332b, a current path may be formed. At this time, by measuring the amount of current flowing through the first variable low-resistance line 341 and the second variable low-resistance line 342, respectively, it is possible to read a plurality of data.

For example, when only the first variable low-resistance line 341 is formed as shown in FIG. 12 , the first data can be read according to the amount of current measured along the first electrode 331 and the 2-1 electrode 332a. . In addition, when only the second variable low-resistance line 342 is formed as shown in FIG. 13, the second data can be read according to the amount of current measured along the first electrode 331 and the 2-2 electrode 332b. 14, when the first variable low-resistance line 341 and the second variable low-resistance line 342 are formed, the first electrode 331, the 2-1 electrode 332a, and the 2-2 electrode 332b are formed. Third data may be read according to the amount of current measured accordingly.

Data can be erased by extinguishing both the first variable low-resistance line 341 and the second variable low-resistance line 342 and can be read as 0. The first variable low-resistance line 341 and the second variable low-resistance line 342 may be extinguished by applying an initialization voltage to the gate 320 . The initialization voltage is for applying an electric field greater than the coercive electric field of the second region 314 to the base 310, but returning the polarization directions of the first region 312 and the second region 314, which is applied in FIG. It may have a polarity opposite to that of the third voltage.

Meanwhile, in the above embodiment, as the base 310 includes the first region 312 and the second region 314, the second variable low-resistance line 341 and the second variable low-resistance line 342 Although an example in which two variable low-resistance lines are formed has been shown, the present invention is not necessarily limited thereto, and the base 310 includes three or more regions having different coercive electric fields, and the number of second electrodes is adjusted accordingly. can design

In the specification of the embodiments (particularly in the claims), the use of the term "above" and similar indicating terms may correspond to both singular and plural. In addition, when a range is described in the examples, it includes the invention to which individual values belonging to the range are applied (unless there is no description to the contrary), and it is as if each individual value constituting the range is described in the detailed description. . Finally, if there is no explicit description or description of the order of steps constituting the method according to the embodiment, the steps may be performed in an appropriate order. Examples are not necessarily limited according to the order of description of the steps. The use of all examples or exemplary terms (eg, etc.) in the embodiments is simply for explaining the embodiments in detail, and the scope of the embodiments is limited due to the examples or exemplary terms unless limited by the claims. It is not. In addition, those skilled in the art can appreciate that various modifications, combinations and changes can be made according to design conditions and factors within the scope of the appended claims or equivalents thereof.

Claims (10)

a base comprising a spontaneously polarizable material; and
A gate disposed adjacent to the base; includes,
The base includes a first region and a second region having different coercive electric fields,
On a plane, the second region is disposed outside the first region,
The gate is located overlapping the first region,
It is formed so that the magnitude of the electric field value for changing the polarization direction of the first region and the magnitude of the electric field value for changing the polarization direction of the second region are different,
When controlling the electric field, the location of the current path is limited to the first region regardless of the application time of the electric field.
Variable low-resistance line-based electronic devices. According to claim 1,
A variable low-resistance line-based electronic device wherein the coercive electric field of the second region is greater than that of the first region. According to claim 2,
When an electric field greater than the coercive electric field of the first region and smaller than that of the second region is applied to the base through the gate, a first variable low-resistance line forming a current passage only in the first region is formed. Variable low-resistance line-based electronic devices. According to claim 3,
A variable low-resistance line-based electronic device in which a second variable low-resistance line is formed only in the second region when an electric field greater than a coercive electric field in the second region is applied to the base through the gate. According to claim 4,
a first electrode positioned to contact the first variable low-resistance line and the second variable low-resistance line; and
The variable low-resistance line-based electronic device further comprising a plurality of second electrodes positioned to contact each of the first variable low-resistance line and the second variable low-resistance line. According to any one of claims 1 to 5,
On a plane, the second region surrounds the first region. For a variable low-resistance line-based electronic device comprising a base comprising a spontaneously polarizable material and a gate disposed adjacent to the base,
applying an electric field to the base by applying a voltage to the gate; and
A step of changing the polarization direction of the spontaneously polarizable material by the electric field to form a variable low-resistance line through which current can flow in the base;
The base includes a first region and a second region having different coercive electric fields,
The variable low-resistance line is selectively formed only in the first region or the second region according to the magnitude of the electric field applied to the base,
It is formed so that the magnitude of the electric field value for changing the polarization direction of the first region and the magnitude of the electric field value for changing the polarization direction of the second region are different,
When controlling the electric field, the location of the current path is limited to the first region regardless of the application time of the electric field.
A variable low-resistance line-based electronic device control method. According to claim 7,
The coercive electric field of the second region is greater than the coercive electric field of the first region;
wherein the variable low-resistance line is formed only in the first region when the magnitude of the electric field is larger than that of the first region and smaller than that of the second region. According to claim 7,
The coercive electric field of the second region is greater than the coercive electric field of the first region;
wherein the variable low-resistance line is formed only in the second region when the magnitude of the electric field is greater than the coercive electric field in the second region. According to claim 8 or 9,
On a plane, the second region is formed to surround the first region,
The gate is a variable low-resistance line-based electronic device control method overlapping the first region.

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