KR20210049743A - Variable low resistance area based electronic device and controlling thereof - Google Patents

Abstract

One embodiment of the present invention discloses an electronic element based on a variable low resistance area, which includes: an active layer comprising a spontaneously polarizable material and doped with one or more impurities; an applying electrode disposed adjacent to the active layer; a polarization region formed in the active layer by applying an electric field to the active layer through the applying electrode; one or more variable low resistance regions including regions having lower electrical resistance than other regions adjacent corresponding to the boundary of the polarization region; a first electrode spaced apart from the applying electrode and connected to the variable low resistance region; and a second electrode spaced apart from the applying electrode and connected to the variable low resistance region.

Description

Variable low resistance area based electronic device and controlling method thereof TECHNICAL FIELD

The present invention relates to an electronic device using a variable low resistance region and a method for controlling the same.

As technology advances and interest in the convenience of people's life increases, attempts to develop various electronic products are becoming more active.

In addition, these electronic products are becoming smaller and more integrated, and the places where they are used are increasing widely.

Such electronic products include various electrical devices, for example, CPU, memory, and various other electrical devices. These elements may include various types of electric circuits.

For example, electrical devices are used in products in various fields, such as home sensor devices for IoT and bioelectronic devices for ergonomics, as well as computers and smartphones.

On the other hand, with the recent speed of technology development and the rapid improvement of the living standards of users, the use and application fields of such electric devices are rapidly increasing, and the demand thereof is also increasing accordingly.

According to this trend, there is a limit to implementing and controlling electronic circuits that are easily and quickly applied to various electric devices that are commonly used.

On the other hand, memory devices, especially nonvolatile memory devices, are widely used as information storage and/or processing devices for various electronic devices such as cameras and communication devices as well as computers.

In particular, many developments have been made in terms of the life and speed of such a memory device. Most of the problems are in securing the life and speed of the memory, but there is a limit to implementing a memory device improving the memory device.

The present invention can provide a variable low-resistance region-based electronic device and a control method thereof that can be easily applied to various uses.

An embodiment of the present invention includes an active layer containing a spontaneous polarization material and doped with one or more impurities, an application electrode disposed adjacent to the active layer, a polarization region formed in the active layer by applying an electric field to the active layer through the application electrode, One or more fluctuating low-resistance regions including regions having lower electrical resistance than other adjacent regions corresponding to the boundary of the polarization region, a first electrode spaced apart from the application electrode and connected to the fluctuating low-resistance region, and spaced apart from the application electrode Disclosed is an electronic device based on a variable low resistance region including a second electrode connected to the variable low resistance region.

In this embodiment, the impurity may include a transition metal.

In the present embodiment, a value of the energy band gap of the active layer may be controlled by the doping amount of the impurity.

Another embodiment of the present invention includes an active layer comprising a spontaneous polarization material, an application electrode disposed adjacent to the active layer, and a polarization region formed in the active layer by applying an electric field to the active layer through the application electrode; One or more fluctuating low-resistance regions including regions having lower electrical resistance than other adjacent regions corresponding to the boundary of the polarization region, a first electrode spaced apart from the application electrode and connected to the fluctuating low-resistance region, and spaced apart from the application electrode And forming a polarization region of the active layer by applying an electric field to the active layer through the application electrode for an electronic device based on a variable low resistance region including a second electrode connected to the variable low resistance region. Forming a step of forming a fluctuating low-resistance region including a region having a lower electrical resistance than other adjacent regions corresponding to the boundary so that the flow of current between the first electrode and the second electrode is formed through the fluctuating low-resistance region. Disclosed is a method of controlling an electronic device based on a variable low-resistance region including the step of doping one or more impurities into the active layer.

In this embodiment, the impurity may include a transition metal.

In the present embodiment, it may include controlling a value of the energy band gap of the active layer by controlling the doping amount of the impurity.

The present embodiment may include measuring a current between the first electrode and the second electrode as the variable low resistance region is formed while controlling the application electrode.

In the present exemplary embodiment, the polarization region may be controlled by controlling the electric field through the application electrode, and the variable low resistance region may be generated or destroyed according to the control of the polarization region.

Other aspects, features, and advantages other than those described above will become apparent from the following drawings, claims, and detailed description of the invention.

The electronic device using the variable low resistance region according to the present invention and a control method thereof can be easily applied to various applications.

1 is a schematic plan view showing an electronic circuit according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1.
3 is an enlarged view of K in FIG. 2.
4A to 4C are diagrams for explaining a control method related to the electronic circuit of FIG. 1. 5 is a schematic plan view showing an electronic circuit according to another embodiment of the present invention.
6 is a cross-sectional view taken along line VI-VI of FIG. 5.
7A to 7D are diagrams for explaining a method of controlling a current path range in relation to the electronic circuit of FIG. 5.
8 is a schematic plan view showing an electronic device according to an embodiment of the present invention.
9 is a cross-sectional view taken along line II-II of FIG. 8.
10 to 14 are diagrams for explaining the operation of the electronic device of FIG. 8.
15 is a schematic cross-sectional view showing an electronic device according to another embodiment of the present invention.
16A to 16C are diagrams schematically showing energy levels in each region of the electronic device of the present embodiment.
17 is a schematic cross-sectional view showing an electronic device according to another embodiment of the present invention.
18 is a schematic plan view showing an electronic device according to another embodiment of the present invention.
19 is a cross-sectional view taken along line VI-VI of FIG. 18.
20 is a graph showing the relationship between voltage and current in a fluctuating low resistance region.
21 is a cross-sectional view of an electronic device based on variable low resistance according to another embodiment of the present invention.
22 is a cross-sectional view of an electronic device based on a variable low resistance region according to another embodiment of the present invention.
23 is a cross-sectional view of an electronic device based on a variable low resistance region according to another embodiment of the present invention.
24 is a cross-sectional view of an electronic device based on a variable low resistance region according to another embodiment of the present invention.
25 is a cross-sectional view of an electronic device based on a variable low resistance region according to another embodiment of the present invention.
26 and 27 are cross-sectional views schematically illustrating an example of an electronic device according to another embodiment of the present invention.
28 is a schematic cross-sectional view illustrating another example of the electronic device of FIG. 26.
29 is a cross-sectional view schematically illustrating another example of the electronic device of FIG. 26.
30 is a cross-sectional view schematically illustrating another example of the electronic device of FIG. 26.
FIG. 31 is a schematic cross-sectional view illustrating an example of a section II′ of the electronic device of FIG. 26.
FIG. 32 is a schematic cross-sectional view illustrating another example of a section II′ of the electronic device of FIG. 26.
33 is a schematic cross-sectional view illustrating another example of a cross section II′ of the electronic device of FIG. 26.
FIG. 34 is a schematic cross-sectional view illustrating another example of a section II′ of the electronic device of FIG. 26.
FIG. 35 is a schematic cross-sectional view illustrating another example of a cross section II′ of the electronic device of FIG. 26.
FIG. 36 is a schematic cross-sectional view illustrating another example of a section II′ of the electronic device of FIG. 26.

Hereinafter, the configuration and operation of the present invention will be described in detail with reference to embodiments of the present invention shown in the accompanying drawings.

Since the present invention can apply various transformations and have various embodiments, specific embodiments are illustrated in the drawings and will be described in detail in the detailed description. Effects and features of the present invention, and a method of achieving them will become apparent with reference to the embodiments described below in detail together with the drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various forms.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and when describing with reference to the drawings, the same or corresponding constituent elements are assigned the same reference numerals, and redundant descriptions thereof will be omitted. .

In the following embodiments, terms such as first and second are used for the purpose of distinguishing one constituent element from other constituent elements rather than a limiting meaning.

In the following examples, expressions in the singular include plural expressions unless the context clearly indicates otherwise.

In the following embodiments, terms such as include or have means that the features or elements described in the specification are present, and do not preclude the possibility of adding one or more other features or components in advance.

In the drawings, components may be exaggerated or reduced in size for convenience of description. For example, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of description, and thus the present invention is not necessarily limited to what is shown.

In the following embodiments, the x-axis, y-axis, and z-axis are not limited to three axes on a Cartesian coordinate system, and may be interpreted in a broad sense including them. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may refer to different directions that are not orthogonal to each other.

When a certain embodiment can be implemented differently, a specific process order may be performed differently from the described order. For example, two processes described in succession may be performed substantially simultaneously, or may be performed in an order opposite to the described order.

1 is a schematic plan view showing an electronic circuit according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1, and FIG. 3 is an enlarged view of K of FIG. 2.

Referring to FIGS. 1 and 2, the electronic circuit 10 of the present embodiment may include an active layer 11, an application electrode 12, and a variable low resistance region VL.

The active layer 11 may include a spontaneous polarization material. For example, the active layer 11 may include an insulating material and may include a ferroelectric material. That is, the active layer 11 may include a material having spontaneous electric polarization (electric dipole) that can be reversed in the presence of an electric field.

As an alternative embodiment the active layer 11 may comprise a perovskite-based material, for example, it may include _{BaTiO 3, SrTiO 3, BiFe3,} PbTiO3, PbZrO3, SrBi2Ta2O9.

In addition, as another example, the active layer 11 has an ABX3 structure, where A may include one or more materials selected from inorganic materials such as Cs, Ru, etc., capable of forming a CnH2n+1 alkyl group, and a perovskite solar cell structure, and B May include one or more materials selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 11 is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _3-x , MAPbI _3, CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _3-x , HC (NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _3-x , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _3-x , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )(HC( NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1-y PbCl x} Br _3-x (0≤x, y≤1) can do.

Since the active layer 11 may be formed by using various other ferroelectric materials, descriptions of all examples thereof will be omitted. In addition, when the active layer 11 is formed, the ferroelectric material may be doped with various other materials to include an additional function or to improve electrical characteristics.

The active layer 11 has spontaneous polarization, and the degree and direction of polarization can be controlled according to the application of an electric field. In addition, the active layer 11 can maintain a polarized state even when the applied electric field is removed.

The application electrode 12 may be formed to apply an electric field to the active layer 11, and for example, a voltage may be applied to the active layer 11.

As an alternative embodiment, the application electrode 12 may be formed to be in contact with the upper surface of the active layer 11.

In addition, the application electrode 12 may be formed to apply voltages of various sizes to the active layer 11 and to control the time of application of the voltage.

As an alternative embodiment, the application electrode 12 may be a gate electrode.

For example, the application electrode 12 may be electrically connected to a power source (not shown) or a power control unit.

The application electrode 12 may include various materials, and may include a material having high electrical conductivity. For example, the application electrode 12 may be formed using various metals.

For example, the application electrode 12 may be formed to contain aluminum, chromium, titanium, tantalum, molybdenum, tungsten, neodymium, scandium, or copper. Alternatively, it may be formed using an alloy of these materials, or may be formed using a nitride of these materials.

In addition, as an optional embodiment, the application electrode 12 may include a laminate structure.

Although not shown, as an optional embodiment, one or more insulating layers may be further disposed between the application electrode 12 and the active layer 11.

The variable low resistance region VL is a region formed in the active layer 11 and is a region through which a current can flow, and may be formed as a path of a current having a linear shape around the application electrode 12 as shown in FIG. 1. have.

Specifically, the low-variable resistance region VL is a region in which electrical resistance is lower than that of other regions adjacent to the low-variable resistance region VL among the regions of the active layer 11.

In addition, after forming the variable low resistance region VL through the application electrode 12, even if the electric field through the application electrode 12 is removed, for example, even if the voltage is removed, the polarization state of the active layer 11 is Since it is maintained, the fluctuating low resistance region VL is maintained, and the state in which the path of the current is formed can be maintained.

Through this, various electronic circuits can be configured.

The variable low resistance region VL has a height HVL, and this height HVL may correspond to the overall thickness of the active layer 11.

The height HVL of the fluctuating low resistance region VL may be proportional to the strength of the electric field, for example, the magnitude of the voltage when the electric field is applied through the application electrode 12. At least the magnitude of this electric field may be larger than the inherent anti-electric field of the active layer 11.

The variable low-resistance region VL is a region formed when a voltage is applied to the active layer 11 through the application electrode 12, and can be changed, for example, generated, destroyed, or moved through the control of the application electrode 12. .

The active layer 11 may include a first polarization region 11F having a first polarization direction, and the variable low resistance region VL may be formed at the boundary of the first polarization region 11F.

In addition, a second polarization region 11R having a second polarization direction may be included so as to be adjacent to the first polarization region 11F, and the variable low resistance region VL is at the boundary of the second polarization region 11R. Can be formed. The second direction may be at least different from the first direction, for example, may be a direction opposite to the first direction.

For example, the variable low resistance region VL may be formed between the first polarization region 11F and the second polarization region 11R. Through this, a first polarization region 11F having a polarization direction in a first direction (e.g., from bottom to top based on FIG. 2) around the fluctuating low resistance region VL and opposite to the first direction. A second polarization region 11R having a polarization direction in a direction (eg, from top to bottom based on FIG. 2) may be disposed to be distinguished.

The variable low resistance region VL may have a width WVL in one direction, which may be proportional to the moving distance of the variable low resistance region VL.

In addition, the width WVL may be the width of a planar region defined as the variable low resistance region VL, which can be said to correspond to the width of the first polarization region 11F.

In addition, the fluctuation low resistance region VL may be formed to correspond to the entire side surface of the boundary line of the first polarization region 11F, and may have a thickness TVL1 in a direction away from the side surface of the first polarization region 11F. have.

As an optional embodiment, this thickness (TVL1) may be 0.1 to 0.3 nanometers.

4A to 4C are diagrams for explaining a method of controlling a current path range for the electronic circuit of FIG. 1.

Referring to FIG. 4A, the active layer 11 may include a second polarization region 11R having a second polarization direction. As an alternative embodiment, a polarization state of the active layer 11 as shown in FIG. 4A may be formed by applying an initializing electric field through the application electrode 12.

Then, referring to FIG. 4B, a first polarization region 11F is formed in the active layer 11. As a specific example, the first polarization region 11F may be first formed in a region overlapping the application electrode 12 so as to correspond to the width of the application electrode 12.

It is larger than the coercive electric field of the active layer 11 through the application electrode 12, and has a size such that the height HVL of the first polarization region 11F can be formed to at least correspond to the entire thickness of the active layer 11. An electric field may be applied to the active layer 11.

Through the application of the electric field through the application electrode 12, the polarization direction of one region of the second polarization region 11R of the active layer 11 may be changed to change the polarization direction to the first polarization region 11F.

As an alternative embodiment, the growth rate in the height HVL direction of the first polarization region 11F may be very fast, for example, it may grow at a rate of 1 km/sec (second).

Then, if the electric field through the applied electrode 12 is continuously maintained, that is, over time, the first polarization region 11F moves in the horizontal direction (H), that is, in a direction orthogonal to the height (HVL), and its size increases. I can. That is, the area of the second polarization area 11R may be gradually converted into the first polarization area 11F.

As an alternative embodiment, the growth rate of the first polarization region 11F in the horizontal direction H may be very fast, for example, it may grow at a rate of 1 m/sec (second).

Through this, the size of the fluctuating low resistance region VL can be controlled. This size is, for example, the width of the fluctuating low resistance region VL and corresponds to the growth distance of the first polarization region 11F, so the growth speed and electric field It can be proportional to the holding time. For example, the growth distance may be proportional to the product of the growth speed and the duration of the electric field.

In addition, the growth speed of the first polarization region 11F may be proportional to the sum of the growth speed in the height HVL direction and the growth speed in the horizontal direction H.

Therefore, the size of the fluctuating low resistance region VL can be adjusted as desired by controlling the electric field holding time.

Specifically, as shown in FIG. 4C, the first polarization region 11F spreads and increases, and accordingly, the fluctuation low resistance region VL may also move in a direction away from the application electrode 12.

In this embodiment, a first polarization region having a first polarization direction different from the second polarization direction is formed in the active layer by applying an electric field to the active layer through the application electrode, and at the boundary between the first polarization region and the second polarization region. A corresponding fluctuation low resistance region can be formed. Such a low-variable resistance region is a region having a low resistance and a region having a reduced resistance, and can be a path of a current, so that an electronic circuit can be easily formed.

In addition, in this embodiment, by controlling the magnitude of the electric field through the applied electrode, for example, by controlling the magnitude of the voltage, the height of the fluctuating low-resistance region can be determined, and specifically, it is controlled to have a height corresponding to the total thickness of the active layer. can do.

In addition, it is possible to determine the size, for example, the width of the variable low resistance region by controlling the time to maintain the electric field through the applied electrode. Through the control of the size of the fluctuation low resistance region, the size of the path of the current flow can be easily controlled.

In addition, even if the electric field through the applied electrode is removed, the polarization state of the polarized region is maintained, so the path of the current can be easily maintained. When the polarization region is expanded by continuously maintaining the electric field through the applied electrode, the already formed fluctuation is reduced. In the resistance region, resistance may be lowered so that no current flows.

Through this, it is possible to control the dissipation of the current path, and as a result, it is possible to easily control the flow of the current.

The electronic circuit of the present embodiment can be controlled to be used for various purposes, and for example, one or more electrodes can be connected so as to contact a variable low resistance region.

5 is a schematic plan view showing an electronic circuit according to another embodiment of the present invention.

6 is a cross-sectional view taken along line VI-VI of FIG. 5.

5 and 6, the electronic circuit 20 of the present embodiment may include an active layer 21, an application electrode 22, and variable low resistance regions VL1, VL2, and VL3.

The active layer 21 may include a spontaneous polarization material. For example, the active layer 21 may include an insulating material and may include a ferroelectric material. That is, the active layer 21 may include a material having spontaneous electric polarization (electric dipole) that can be reversed in the presence of an electric field.

As an optional embodiment, the active layer 21 may include a perovskite-based material, and a detailed description thereof will be omitted since it is the same as the above-described embodiment.

The application electrode 22 may be formed to apply an electric field to the active layer 21, and for example, a voltage may be applied to the active layer 21. Details are the same as those of the above-described embodiment, and thus will be omitted.

The variable low resistance regions VL1, VL2, and VL3 may include a first variable low resistance region VL1, a second variable low resistance region VL2, and a third variable low resistance region VL3.

The first fluctuating low-resistance region VL1 may have a larger width than the second fluctuating low-resistance region VL2, and the second fluctuating low-resistance region VL2 may have a larger width than the third fluctuating low-resistance region VL3. have. For example, the region surrounded by the first fluctuating low resistance region VL1 has a larger width than the region surrounded by the second fluctuating low resistance region VL2, and the region surrounded by the second fluctuating low resistance region VL2 has a third fluctuation. It may have a larger width than a region surrounded by the low resistance region VL3.

As an optional embodiment, the first fluctuating low-resistance region VL1 is disposed outside the second fluctuating low-resistance region VL2, and the second fluctuating low-resistance region VL2 is the outer circumference of the third fluctuating low-resistance region VL3. Can be placed on

The first fluctuating low-resistance region VL1, the second fluctuating low-resistance region VL2, and the third fluctuating low-resistance region VL3 are regions formed in the active layer 21 and are regions through which current can flow, and have a linear current. It can be formed with a path of.

Specifically, the first fluctuating low-resistance region VL1, the second fluctuating low-resistance region VL2, and the third fluctuating low-resistance region VL3 are among the regions of the active layer 21. This is a region in which electrical resistance is lower than that of other regions adjacent to the second low fluctuation resistance region VL2 and the third low fluctuation resistance region VL3.

In addition, after forming the first fluctuating low resistance region VL1, the second fluctuating low-resistance region VL2 and the third fluctuating low-resistance region VL3 through the application electrode 22, Since the polarization state of the active layer 21 is maintained even when the electric field is removed or voltage is removed, the first fluctuating low resistance region VL1, the second fluctuating low resistance region VL2, and the third fluctuating low resistance region (VL3) is maintained, and the state in which the path of the current is formed can be maintained.

Through this, various electronic circuits can be configured. For example, at least a portion of a memory device capable of storing one or more data may be configured.

The variable low resistance regions VL1, VL2, and VL3 have a height HVL, and this height HVL may correspond to the overall thickness of the active layer 21.

The active layer 21 may include first polarization regions 21F1 and 21F3 having a first polarization direction, and the fluctuation low resistance regions VL1, VL2, and VL3 are the boundaries of the first polarization regions 21F1 and 21F3. Can be formed in

In addition, second polarization regions 21R1 and 21R2 having a second polarization direction may be included so as to be adjacent to the first polarization regions 21F1 and 21F3, and the variable low resistance region VL is the second polarization region 21R1. , 21R2). The second direction may be at least different from the first direction, for example, may be a direction opposite to the first direction.

For example, the first variable low resistance region VL1 may be formed between the first polarization region 21F1 and the second polarization region 21R1.

In addition, the second variable low resistance region VL2 may be formed between the first polarization region 21F1 and the second polarization region 21R2.

In addition, the third low-variation resistance region VL3 may be formed between the first polarization region 21F3 and the second polarization region 21R2.

7A to 7D are diagrams for explaining a method of controlling a current path range in relation to the electronic circuit of FIG. 5.

Referring to FIG. 7A, the active layer 21 may include a second polarization region 21R having a second polarization direction. As an alternative embodiment, a polarization state of the active layer 21 as shown in FIG. 7A may be formed by applying an initializing electric field through the application electrode 22.

Then, referring to FIG. 7B, a first polarization region 21F is formed in the active layer 21. As a specific example, the first polarization region 21F is first formed in a region overlapping the application electrode 22 so as to correspond to the width of the application electrode 22 and then grows in a horizontal direction to form a state as shown in FIG. 7B. In addition, the first polarization region 21R of FIG. 7A may be reduced to change to the first polarization region 21R1 of FIG. 7B.

A first variable low resistance region VL1 may be formed between the first polarization region 21F and the second polarization region 21R1.

Then, referring to FIG. 7C, the polarization direction of a portion of the first polarization region 21F is converted into a second polarization region 21R2 having a polarization direction in the second direction by applying an electric field in the opposite direction to that of FIG. 7B. I can. For example, a second polarization region 21R2 having a polarization direction in a second direction opposite to the first polarization direction of the first polarization region 21F may be formed.

In addition, through this, the size of the first polarization region 21F of FIG. 7B may be reduced to change into the first polarization region 21F1 of the shape shown in FIG. 7C.

A second variable low resistance region VL2 may be formed between the second polarization region 21R2 and the first polarization region 21F1.

Since the polarization state is maintained, the first fluctuating low resistance region VL1 may be maintained as it is.

Then, referring to FIG. 7D, the polarization direction of a portion of the second polarization region 21R2 is converted into a first polarization region 21F3 having a polarization direction in the first direction by applying an electric field in the opposite direction to that of FIG. 7C. can do. For example, a first polarization region 21F3 having a polarization direction in a first direction opposite to the second polarization direction of the second polarization region 21R2 may be formed.

In addition, through this, the size of the second polarization region 21R2 of FIG. 7C may be reduced to change into the second polarization region 21R2 of the shape shown in FIG. 7D.

A third variable low resistance region VL3 may be formed between the second polarization region 21R2 and the first polarization region 21F3.

Since the polarization state is maintained, the first fluctuating low-resistance region VL1 and the second fluctuating low-resistance region VL2 are maintained as they are, and a third fluctuating low-resistance region VL3 may be added thereto.

In this embodiment, a first polarization region having a first polarization direction different from the second polarization direction is formed in the active layer by applying an electric field to the active layer through the application electrode, and at the boundary between the first polarization region and the second polarization region. A corresponding fluctuation low resistance region can be formed. Such a low-variable resistance region is a region having a low resistance and a region having a reduced resistance, and can be a path of a current, so that an electronic circuit can be easily formed.

In addition, according to the present embodiment, the magnitude of the electric field through the application electrode can be controlled and the direction of the electric field can be controlled, thereby forming a plurality of first polarization regions or a plurality of second polarization regions with respect to the active layer.

A plurality of low-variation resistance regions may be formed at a boundary line between the plurality of first polarization regions or the plurality of second polarization regions. Since each of the plurality of fluctuating low resistance regions can form a path of current, it is possible to easily generate and control electronic circuits of various types and uses.

For example, since the number of variable low-resistance regions can be selectively applied around the applied electrode, various current paths can be formed, and a memory for storing various data according to the current path can be implemented.

8 is a schematic plan view showing an electronic circuit according to an embodiment of the present invention, and FIG. 9 is a cross-sectional view taken along line II-II of FIG. 8.

8 and 9, the electronic device 100 of the present embodiment may include an active layer 110, an application electrode 120, a variable low resistance region VL, and one or more connection electrode units 131 and 132. have.

The active layer 110 may include a spontaneous polarization material. For example, the active layer 110 may include an insulating material and may include a ferroelectric material. That is, the active layer 110 may include a material having spontaneous electric polarization (electric dipole) that can be reversed in the presence of an electric field.

As an alternative embodiment the active layer 110 may comprise a perovskite-based material, for example, it may include _{BaTiO 3, SrTiO 3, BiFe3,} PbTiO3, PbZrO3, SrBi2Ta2O9.

In addition, as another example, the active layer 110 has an ABX3 structure, where A may include one or more materials selected from inorganic materials such as Cs, Ru, etc., capable of forming a CnH2n+1 alkyl group, and a perovskite solar cell structure, and B May include one or more materials selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 110 is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _3-x , MAPbI _3, CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _3-x , HC (NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _3-x , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _3-x , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )(HC( NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1-y PbCl x} Br _3-x (0≤x, y≤1) can do.

Since the active layer 110 may be formed by using various other ferroelectric materials, descriptions of all examples thereof will be omitted. In addition, when the active layer 110 is formed, the ferroelectric material may be doped with various other materials to include an additional function or to improve electrical characteristics.

The active layer 110 has spontaneous polarization, and the degree and direction of polarization can be controlled according to the application of an electric field. In addition, the active layer 110 may maintain a polarized state even when the applied electric field is removed.

The application electrode 120 may be formed to apply an electric field to the active layer 110, and for example, a voltage may be applied to the active layer 110.

As an alternative embodiment, the application electrode 120 may be formed to be in contact with the upper surface of the active layer 110.

In addition, the application electrode 120 may apply voltages of various sizes to the active layer 110 and may be formed to control a voltage application time.

As an alternative embodiment, the application electrode 120 may be a gate electrode.

For example, the application electrode 120 may be electrically connected to a power source (not shown) or a power control unit.

The application electrode 120 may include various materials, and may include a material having high electrical conductivity. For example, the application electrode 120 may be formed using various metals.

For example, the application electrode 120 may be formed to contain aluminum, chromium, titanium, tantalum, molybdenum, tungsten, neodymium, scandium, or copper. Alternatively, it may be formed using an alloy of these materials, or may be formed using a nitride of these materials.

In addition, as an optional embodiment, the application electrode 120 may include a laminate structure.

The connection electrode units 131 and 132 may include one or more electrode members, for example, a first connection electrode member 131 and a second connection electrode member 132.

The connection electrode portions 131 and 132 may be formed on the active layer 110, for example, may be formed to be spaced apart from the application electrode 120 on the upper surface of the active layer 110, and as an alternative embodiment, the active layer 110 ) Can be formed to contact.

The first connection electrode member 131 and the second connection electrode member 132 may be formed using various conductive materials. For example, the first connection electrode member 131 and the second connection electrode member 132 may be formed to contain aluminum, chromium, copper, tantalum, titanium, molybdenum, or tungsten.

As an optional embodiment, the first connection electrode member 131 and the second connection electrode member 132 may include a structure in which a plurality of conductive layers are stacked.

As an optional embodiment, the first connection electrode member 131 and the second connection electrode member 132 may be formed using a conductive metal oxide, for example, indium oxide (eg, In ₂ O ₃ ), tin oxide. (E.g. _{SnO 2} ), zinc oxide (e.g. ZnO), indium tin oxide alloy (e.g. In ₂ O _{3 -SnO 2} ) or indium zinc oxide alloy (e.g. In ₂ O ₃ -ZnO) Can be formed.

As an alternative embodiment, the connection electrode units 131 and 132 may be terminal members including input/output of electrical signals.

In addition, as a specific example, the first connection electrode member 131 and the second connection electrode member 132 of the connection electrode units 131 and 132 may include a source electrode or a drain electrode.

10 to 14 are diagrams for explaining the operation of the electronic device of FIG. 8.

10 is a diagram showing a state in which a first electric field is applied through the application electrode 120, FIG. 11 is a cross-sectional view taken along lines VIII-VIII of FIG. 10, and FIG. 12 is an enlarged view of K of FIG. 11 to be.

10 to 14, when a first electric field is applied to the active layer 110 through the application electrode 120, at least one region of the active layer 110 may include a polarization region 110F.

The polarization region 110F may have a shape surrounding the application electrode 120 around the application electrode 120. The polarization region 110F may have a boundary line.

The first low fluctuation resistance region VL1 may be formed in a region corresponding to the side of the boundary line. Referring to FIG. 10, the application electrode 120 may be formed in a linear shape surrounding the application electrode 120.

For example, the first variable low resistance region VL1 may have a first width WVL1 in one direction so as to surround the application electrode 120.

In addition, the first variable low-resistance region VL1 may be formed to correspond to the entire side surface of the boundary line of the polarization region 110F, and may have a thickness TVL1 in a direction away from the side surface of the polarization region 110F.

As an optional embodiment, this thickness (TVL1) may be 0.1 to 0.3 nanometers.

As an alternative embodiment, a process of applying an initialization electric field to the active layer 110 before the first voltage is applied to the active layer 110 through the application electrode 120 may be performed.

The process of applying such an initializing electric field to the active layer 110 may include converting all of the regions of the active layer 110 to polarization in a direction different from the polarization region 110F, for example, a polarization region in the opposite direction. .

Then, the polarization region 110F may be formed in one region by applying an electric field in the opposite direction.

The first variable low resistance region VL1 formed at the boundary of the polarization region 110F of the active layer 110 may be changed to a region having a lower resistance than other regions of the active layer 110. For example, the first low fluctuation resistance region VL1 may have a lower resistance than the polarization region 110F of the active layer 110 and a region of the active layer 110 surrounding the first fluctuation low resistance region VL1.

Through this, the first fluctuating low resistance region VL1 may form a current path.

As an alternative embodiment, the first variable low resistance region VL1 may correspond to a region of a plurality of domain walls provided in the active layer 110.

In addition, the first fluctuating low resistance region VL1 may be maintained as long as the polarization state of the polarization region 110F of the active layer 110 is maintained. That is, even when the first voltage applied to the active layer 110 through the application electrode 120 is removed, the state of the variable low resistance region VL1, that is, the low resistance state may be maintained.

As shown in FIGS. 10 and 11, a current path may be formed through the first fluctuating low resistance region VL1. However, since the connection electrode portions 131 and 132 do not correspond to the first fluctuating low resistance region VL1, current flow through the connection electrode portions 131 and 132 may not occur.

FIG. 13 is a diagram illustrating a state in which the first electric field is further maintained for a predetermined period of time through the application electrode 120, and FIG. 14 is a cross-sectional view taken along line XI-XI of FIG. 13.

13 and 14, the holding time of the first electric field through the application electrode 120 increases, so that the polarization region 110F of FIGS. 10 and 11 moves in the horizontal direction, thereby increasing the polarization region 110F. A second low fluctuation resistance region VL2 larger than the first low fluctuation resistance region VL1 may be formed.

For example, by continuously maintaining the voltage applied in FIGS. 10 and 11 for a predetermined period of time, a structure as shown in FIGS. 13 and 14 may be formed.

The polarization region 110F may have a shape surrounding the application electrode 120 around the application electrode 120. The polarization region 110F may have a boundary line. The second low fluctuation resistance region VL2 may be formed in a region corresponding to a side surface of the boundary line of the polarization region 110F. Referring to FIG. 13, the application electrode 120 may be formed in a linear shape surrounding the application electrode 120.

For example, the second variable low resistance region VL2 may have a second width WVL2 in one direction to surround the applied electrode 120, and the second width WVL2 is greater than the first width WVL1. I can.

In addition, the second fluctuation low resistance region VL2 may be formed to correspond to the entire side of the boundary line of the polarization region 110F, and may have a thickness in a direction away from the side surface of the polarization region 110F, and an optional embodiment As such, the thickness may be 0.1 to 0.3 nanometers.

The second variable low-resistance region VL2 formed at the boundary of the polarization region 110F of the active layer 110 may be changed to a region having a lower resistance than other regions of the active layer 110. For example, the second low variable resistance region VL2 may have a lower resistance than the region of the active layer 110 around the polarized region 110F of the active layer 110 and the second low variable resistance region VL2.

Through this, the second fluctuation low resistance region VL2 may form a current path.

As an alternative embodiment, the second variable low resistance region VL2 may correspond to a region of a plurality of domain walls provided in the active layer 110.

In addition, the second fluctuating low resistance region VL2 may be maintained as long as the polarization state of the active layer 110 is maintained. That is, even when the second voltage applied to the active layer 110 through the application electrode 120 is removed, the state of the second fluctuating low resistance region VL2, that is, the low resistance state may be maintained.

Therefore, a current path may be formed through the second fluctuation low resistance region VL2.

In addition, as a specific example, the connection electrode portions 131 and 132 are formed to correspond to the second variable low resistance region VL2, for example, the first connection electrode member 131 of the connection electrode portions 131 and 132 and The second connection electrode members 132 may be disposed to be in contact with the upper surface of the second variable low resistance region VL2 while being spaced apart from each other.

Through this, current may flow through the first connection electrode member 131 and the second connection electrode member 132 of the connection electrode units 131 and 132.

In addition, various electrical signals may be generated. For example, when the electric field in the states of FIGS. 13 and 14 is more continuously applied, that is, when the application time increases, the second fluctuating low resistance region VL2 further moves and 2 It may escape from the connection electrode member 132. Accordingly, current may not flow through the first connection electrode member 131 and the second connection electrode member 132.

In addition, as an optional embodiment, an initialization process for the entire active layer 110 may be performed.

Then, when an electric field is applied to the active layer 110 through the application electrode 120 again, current flows through the first connection electrode member 131 and the second connection electrode member 132 of the connection electrode units 131 and 132. I can.

In the electronic circuit of the present embodiment, voltages of various sizes can be applied to the active layer through the application electrode, and the applied time can be controlled.

Through this, a polarization region may be formed in the active layer with a region having a desired size, and a variable low resistance region may be formed at the boundary of the polarization region.

When a connection electrode part is formed to correspond to such a fluctuating low-resistance region, for example, when the connection electrode part is formed, a current may flow through the connection electrode part, and even if the voltage is removed, the active layer containing the ferroelectric material can maintain a polarized state. The fluctuating low-resistance region of the boundary can also be maintained, so that current can continue to flow.

In addition, a voltage may be applied to the active layer through the application electrode so that the variable low-resistance region is changed into a polarization region, and current does not flow through the connection electrode portion through which current flows.

By controlling the voltage of the applied electrode, the flow of current can be controlled, and the electronic circuit can be used for various purposes through the control of the current flow.

As an alternative embodiment, the electronic circuit can be used as a memory.

For example, it can be used as a memory by defining the flow of current as 1 and not flowing as 0, and as a specific example, since current can flow even when the voltage is removed, it can also be used as a nonvolatile memory.

In addition, the electronic circuit may constitute a circuit unit that generates and transmits various signals, and may also be used as a switching element.

In addition, since it can be applied in a simple structure to other parts requiring control of electrical signals, it can be applied to various fields such as variable circuits, CPUs, and biochips.

15 is a schematic cross-sectional view showing an electronic device according to another embodiment of the present invention.

The electronic device 200 of the present embodiment may include an active layer 210, an application electrode 220, a variable low resistance region VL2, and one or more connection electrode portions 231 and 232. The active layer 210 has spontaneous polarization, and the degree and direction of polarization may be controlled according to the application of an electric field. In addition, the active layer 210 may maintain a polarized state even when the applied electric field is removed.

The active layer 210 may include a spontaneous polarization material. For example, the active layer 210 may include an insulating material and may include a ferroelectric material. That is, the active layer 210 may include a material having spontaneous electric polarization (electric dipole) that can be reversed in the presence of an electric field.

The active layer 210 as an alternative embodiment may comprise a perovskite-based material, for example, may include _{BaTiO 3, SrTiO 3, BiFe3,} PbTiO3, PbZrO3, SrBi2Ta2O9.

In addition, as another example, the active layer 210 has an ABX3 structure, where A may include one or more materials selected from inorganic materials such as Cs, Ru, etc., capable of forming a CnH2n+1 alkyl group, and a perovskite solar cell structure, and B May include one or more materials selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 11 is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _3-x , MAPbI _3, CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _3-x , HC (NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _3-x , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _3-x , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )(HC( NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1-y PbCl x} Br _3-x (0≤x, y≤1) can do.

Since the active layer 210 may be formed by using various other ferroelectric materials, descriptions of all examples thereof will be omitted. In addition, when the active layer 210 is formed, the ferroelectric material may be doped with various other materials to include an additional function or to improve electrical characteristics.

The active layer 210 has spontaneous polarization, and the degree and direction of polarization may be controlled according to the application of an electric field. In addition, the active layer 210 may maintain a polarized state even when the applied electric field is removed.

The application electrode 220 may be formed to apply an electric field to the active layer 210, and for example, a voltage may be applied to the active layer 210. The application electrode 220 may be formed to apply an electric field to the active layer 210, and for example, a voltage may be applied to the active layer 210. As an alternative embodiment, the application electrode 220 may be formed to be in contact with the upper surface of the active layer 210. A detailed description of the application electrode 220 is omitted since it can be applied in the same or similar to that described in the above-described embodiment.

When the first electric field is applied to the active layer 210 through the application electrode 220, at least one region of the active layer 210 may include a polarization region 210F, and the polarization region 210F is the application electrode 220 It may have a shape surrounding the application electrode 220 with the center of. In addition, the polarization region 210F may have a boundary line.

The variable low resistance region VL2 may be formed in a region corresponding to a side surface of the boundary line of the polarization region 210F.

The variable low resistance region VL2 may be changed to a region having a lower resistance than other regions of the active layer 210.

For example, a polarization direction of a region of the active layer 210 and a region facing the region of the active layer 210 with the variable low resistance region VL2 interposed therebetween may be opposite.

As a specific example, the polarization direction of the polarization region 210F overlapping the application electrode 220 and the other region of the adjacent active layer 210 (outside the polarization region 210F in FIG. 15) with the variable low resistance region VL2 interposed therebetween. The polarization directions of (area) may be opposite to each other.

The fluctuation low resistance region VL2 is a region having a low resistance and may form a current path.

As an alternative embodiment, the variable low resistance region VL2 may correspond to a region of a plurality of domain walls provided in the active layer 210.

In addition, the variability low resistance region VL2 may be maintained continuously as long as the polarization state of the polarization region 210F of the active layer 210 is maintained. That is, even when the first voltage applied to the active layer 210 through the application electrode 220 is removed, the state of the variable low resistance region VL2, that is, the low resistance state may be maintained.

The connection electrode parts 231 and 232 may include one or more electrode members, for example, a first connection electrode member 231 and a second connection electrode member 232.

The connection electrode portions 231 and 232 may be formed to overlap the active layer 210 and to be spaced apart from the application electrode 220.

The first connection electrode member 231 and the second connection electrode member 232 may be formed using various conductive materials.

As an optional embodiment, the first connection electrode member 231 and the second connection electrode member 232 may be terminal members including input/output of electrical signals.

In addition, as a specific example, the first connection electrode member 231 and the second connection electrode member 232 may include a source electrode or a drain electrode, and the first connection electrode member 231 is a source electrode and a second connection electrode. The member 232 may be a drain electrode.

16A to 16C are diagrams schematically showing energy levels in each region of the electronic device of the present embodiment.

16A is a diagram schematically illustrating energy levels of each region of the electronic device of FIG. 15.

Referring to FIG. 16A, energy levels of the first connection electrode member 231 and the second connection electrode member 232 made of a material having high conductivity such as metal, for example, the Fermi energy level (Ef) are shown, and the energy band The energy level of the active layer 210P having a gap is shown.

For example, FIG. 16A may represent an energy level of the active layer 210P in a state in which a separate impurity is not doped.

The active layer 210P may be doped with an impurity, for example, a transition metal. The transition metal may be doped into the active layer 210P to control the energy band gap.

For example, referring to FIG. 16B, it is shown that the value of the energy band gap of the active layer 210(L) is decreased compared to FIG. 16A. Specifically, the energy band of the active layer 201(L) doped with a transition metal Indicates the gap.

Through this, the overall electrical resistance of the electronic device can be reduced, and the on current value can be increased.

In addition, referring to FIG. 16C as another example, it is shown that the value of the energy band gap of the active layer 210 (H) is increased compared to that of FIG. 16A. Specifically, the energy of the active layer 201 (H) doped with a transition metal It represents the band gap.

Through this, the overall electrical resistance of the electronic device can be increased and the Off current value can be decreased.

The transition metal used for such doping is doped to the active layer 210 at a certain concentration or less, thereby deforming at least a part of the structure of the active layer 210 to increase electrical resistance, and is doped to the active layer 210 at a certain concentration or higher. Electrical resistance can be reduced by inducing carriers.

<Inquiry>

1. Please tell me the transition metal used for the doping.

(Does all transition metals be included or is there a desirable material?)

2. About how much doping, the specific resistance increases, and when doped more than how much, the resistance decreases?

By controlling the doping of the transition metal to the active layer 210, the specific resistance of the electronic device can be reduced without increasing the change of other materials or structures of the electronic device, thereby improving the efficiency of the electronic device.

In addition, as another example, it is possible to easily implement an electronic device having desired electrical characteristics in which the specific resistance of the electronic device is increased and the off-current value is decreased through the doping control of the transition metal.

In the electronic device of the present embodiment, a polarization region having a polarization direction in one direction may be formed on the active layer by application of a voltage through the application electrode, and a variable low resistance region may be formed at the boundary of the polarization region. For example, one side of the active layer may have a polarization direction in one direction and the other side may have a polarization direction in the opposite direction based on the low-variability region of the active layer.

The low fluctuation resistance region is a region in which resistance is lowered, and a current flow through the first connection electrode member and the second connection electrode member may be formed.

In this case, a transition metal may be doped with respect to the active layer, and the energy band gap of the active layer may be increased or decreased.

Through this, it is possible to easily implement an efficient electronic device structure by reducing the resistance of the electronic device, and on the contrary, by increasing the specific resistance, it is possible to easily design an optimal electronic device having a desired resistance value.

17 is a schematic cross-sectional view showing an electronic device according to another embodiment of the present invention.

The electronic device 200 ″ of the present exemplary embodiment may include an active layer 210 ″, an application electrode 220 ″, a variable low resistance region VL, and one or more connection electrode units 231 ″ and 232 ″. The electrode 220" may be formed on one surface of the active layer 210", for example, may be formed to contact one surface.

The first connection electrode member 231" and the second connection electrode member 232" of the connection electrode portions 231" and 232" may be formed to face one surface of the active layer 210", for example, applied The electrode 220" may be disposed to face the opposite surface of the one surface on which the electrode 220" is formed.

When a first electric field is applied to the active layer 210" through the application electrode 220", at least one region of the active layer 210" may include a polarization region 210F', and this polarization region 210F' The application electrode 220" may be a form surrounding the application electrode 220". In addition, the polarization region 210F' may have a boundary line.

The fluctuation low resistance region VL may be formed in a region corresponding to the side of the boundary line. The variable low resistance region VL may be changed to a region having a lower resistance than other regions of the active layer 210 ″.

For example, a polarization direction of a region of the active layer 210 ″ and a region facing the region of the active layer 210 ″ with the variable low resistance region VL interposed therebetween may be opposite.

As a specific example, the polarization direction of the polarization region 210F" overlapping the application electrode 220" and the other region of the adjacent active layer 210" with the variable low resistance region VL interposed therebetween (the polarization region 210F in FIG. The polarization directions of the outer region of')) may be opposite to each other.

The fluctuation low resistance region VL is a region having a low resistance and may form a current path.

As an alternative embodiment, the variable low resistance region VL may correspond to a region of a plurality of domain walls provided in the active layer 210 ″.

In addition, the variability low resistance region VL may be maintained as long as the polarization state of the polarization region 210F' of the active layer 210" is maintained. That is, the active layer 210" through the application electrode 220" Even if the first voltage applied to is removed, the state of the variable low resistance region VL, that is, the low resistance state may be maintained.

Although not shown, the description of the energy level of FIG. 16 may be applied as it is to the present embodiment.

For example, an impurity, such as a transition metal, may be doped into the active layer 210". By doping the transition metal, an increase or decrease in the energy band gap of the active layer 210" may be controlled.

Through this, the overall electrical resistance of the electronic device can be reduced, and the on current value can be increased.

In addition, as another example, the overall electrical resistance of the electronic device may be increased, and the Off current value may be decreased.

Through this, it is possible to easily implement a structure of an electronic device having various electrical characteristics.

18 is a schematic plan view showing an electronic device according to another embodiment of the present invention, and FIG. 19 is a cross-sectional view taken along line VI-VI of FIG. 18.

18 and 19, the electronic device 300 based on the variable low resistance region may include an active layer 310, a gate 320, a source 331, and a drain 332.

The active layer 310 may include the above-described active layer material, for example, a spontaneous polarization material. For example, the active layer 310 may include an insulating material and may include a ferroelectric material. That is, the active layer 310 may include a material having spontaneous electric polarization (electric dipole) that can be reversed in the presence of an electric field.

As an alternative embodiment the active layer 310 may comprise a perovskite-based material, for example, it may include _{BaTiO 3, SrTiO 3, BiFe3,} PbTiO3, PbZrO3, SrBi2Ta2O9.

In addition, as another example, the active layer 310 has an ABX3 structure, where A may include one or more materials selected from inorganic materials such as Cs, Ru, etc., capable of forming a CnH2n+1 alkyl group, and a perovskite solar cell structure, and B May include one or more materials selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 310 is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _3-x , MAPbI _3, CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _3-x , HC (NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _3-x , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _3-x , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )(HC( NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1-y PbCl x} Br _3-x (0≤x, y≤1) can do.

The active layer 310 may be formed using various other ferroelectric materials, and descriptions of all examples thereof will be omitted. In addition, when the active layer 310 is formed, the ferroelectric material may be doped with various other materials to include an additional function or to improve electrical characteristics.

The active layer 310 has spontaneous polarization, and the degree and direction of polarization can be controlled according to the application of an electric field. In addition, the active layer 310 may maintain a polarized state even when the applied electric field is removed.

The active layer 310 may include a second region 312 and a first region 311 located adjacent to each other in the X-Y plane direction and having different polarization directions for at least a predetermined time according to an applied voltage. The first region 311 may have a polarization in a first direction, and the first direction is a thickness direction of the active layer 310, that is, a direction in which the second region 312 and the first region 311 are disposed It may be a Z-direction perpendicular to.

The second region 312 is positioned adjacent to the first region 311 in a direction perpendicular to the thickness, that is, in the XY plane direction, and the second region 312 is selectively disposed opposite to the first direction. It can have polarizations arranged in two directions.

A gate 320 may be positioned on the active layer 310. Although not shown in the drawing, the gate 320 may be connected to a separate device to receive a gate signal.

The polarization of the first region 311 in a direction opposite to that of the second region 312 can be achieved by a voltage applied to the gate 320.

In this way, a variable low resistance region 340 may be formed between the second region 312 and the first region 311 having polarizations in opposite directions. The variable low-resistance region 340 as described above becomes a region having a very small resistance compared to the second region 312 and/or the first region 311, and a current flow can be formed through this region.

The fluctuation low resistance region 340 may be formed according to the following exemplary embodiment.

First, the active layer 310 including the spontaneous polarization material may have a polarization in the first direction as a whole. The entire active layer 310 is not limited to having polarization in the first direction, and at least a predetermined area of the active layer 310 facing the gate 320 may have polarization in the first direction. Optionally, such a first direction polarization may be formed by applying an initializing electric field to the gate 320.

In this state, as a first voltage is applied to the gate 320 for a first time and an electric field is applied to the active layer 310 through the gate 320, a certain area facing the gate 320 is polarized in the second direction. Changes. The electric field applied to the gate 320 to change the direction of polarization can be adjusted by the first voltage, that is, the first voltage so that an electric field greater than the coercive electric field of the spontaneous polarization material forming the active layer 310 is applied. Can be added.

The active layer 310 may have a first thickness t1. In this case, the second region 312 is formed over the entire first thickness t1, and the magnitude of the first voltage applied to the gate 320 may be adjusted according to the first thickness t1. According to an embodiment, the first thickness t1 and the magnitude of the first voltage applied to the gate 320 may be proportional. That is, when the first thickness t1 is thick, the first voltage can be increased.

As can be seen in FIG. 19, the variable low resistance region 340 may also be formed over the entire first thickness t1.

The area of the second region 312 formed in this way may be determined in proportion to the first time when the first voltage is applied to the gate 320.

Therefore, in order to form the second region 312 having a desired area and/or size, an appropriate gate voltage and time for the ferroelectric material, and the first thickness t1 of the second region 312 are tested and/or calculated. Can be determined in advance by

When the polarization direction of the second region 312 changes from the first direction to the second direction, the gap between the first region 311 having polarization in the first direction and the second region 312 having polarization in the second direction A fluctuating low-resistance region 340 having a predetermined width may be formed. The variable low resistance region 340 may be formed around the gate 320.

The source and drain 331 and 332 may be formed to overlap the active layer 310 and to be spaced apart from the gate 320.

The source 331 and the drain 332 may be formed to overlap the variable low resistance region 340. For example, the source 331 and the drain 332 may be formed to contact the variable low resistance region 340.

Although not shown, the description of the energy level of FIG. 16 may be applied as it is to the present embodiment.

For example, the active layer 310 may be doped with an impurity, for example, a transition metal. By doping the transition metal, it is possible to control increasing or decreasing the value of the energy band gap of the active layer 310.

Through this, the overall electrical resistance of the electronic device can be reduced, and the on current value can be increased.

In addition, as another example, the overall electrical resistance of the electronic device may be increased, and the Off current value may be decreased.

Through this, it is possible to easily implement a structure of an electronic device having various electrical characteristics.

20 is a graph showing a voltage and current relationship between a first region and a low fluctuation resistance region.

Specifically, FIG. 20 shows a state in which the current changes as the voltage increases in the first region and the variable low resistance region.

That is, in FIG. 20 (a) shows a state in which the current changes as the voltage increases in the fluctuating low resistance region, and (b) shows the state in which the current changes as the voltage increases in the first region 311. .

Since the variable low resistance region 340 has a very small resistance compared to the first region 311, it can be seen that the flow of current smoothly occurs according to the application of voltage.

The variable low resistance region 340 formed as described above may not be erased even after time passes.

When the source 331 and the drain 332 are positioned so as to contact the variable low resistance region 340 formed as described above, the flow of current from the source 331 to the drain 332 through the variable low resistance region 340 Can be formed. Therefore, at this time, data can be written and can be read as 1, for example.

Optionally, the variable low resistance region 340 may be erased by making the polarization direction of the second region 312 equal to the polarization direction of the first region 311 by the voltage applied to the gate 320.

That is, by applying the second voltage to the gate 320, the polarization direction of the second region 312 may be set to the first direction again. Thereafter, the second voltage is maintained for a second time to grow a region whose polarization changes in the first direction in a planar direction, and the region whose polarization is changed in the first direction passes through the fluctuation low resistance region 340 When extending to the region 311, the fluctuating low resistance region 340 may disappear. In this case, a current cannot flow from the source 331 to the drain 332, and thus data can be erased at this time, and read as zero.

In this case, the second voltage may be a voltage different from the first voltage, and may be a voltage having the same magnitude as the first voltage according to an exemplary embodiment and a polarity opposite to the first voltage. The second time may be at least the first time or longer.

In addition, as an alternative embodiment of erasing the variable low resistance region 340, if the first voltage applied to the gate 320 to form the second region 312 is continuously applied and maintained, the second region 312 is It grows in a horizontal direction, and accordingly, the polarization direction of the entire first region 311 is reversed to be converted into the second region 312, and accordingly, the fluctuation low resistance region 340 may disappear.

The electronic device based on the variable low resistance region formed as described above can be used as a nonvolatile memory device because the above-described variable low resistance region 340 can maintain its state even when the power to the gate 320 is turned off.

Since the variable low-resistance region memory device can ^{write/erase about 10 12} times, it can have a memory life of ^{about 10 7} times that of a conventional semiconductor device-based memory device.

As for the memory speed, the variable low-resistance region memory device may be about 10 ^-9 sec, and thus the memory speed may be increased by ^{about 10 6} times compared to the conventional semiconductor device-based memory device.

As described above, the variable low-resistance region memory device can be a memory device having very excellent speed and lifetime.

In addition, since the position at which the variable low resistance region 340 is formed can be adjusted according to the gate voltage and/or application time, it is possible to design various memory devices and to be thinner compared to conventional ferroelectric memory devices using ferroelectrics. Can be achieved. In addition, there is an advantage in that the degree of integration of the device can be increased because the degree of freedom in memory design is increased.

The variable low-resistance region 340 formed in this way may be formed in a closed loop shape around the gate 320, and the source 331 and the drain 332 are disposed in a part of the closed loop. There may be two lines connecting the drain and drain 332. However, the present invention is not limited thereto, and when a gate is positioned on one side of the active layer in a plane direction and a source and a drain adjacent to the other two sides are disposed, the variable low resistance region may become a single line connecting the source and the drain.

The source 331 and the drain 332 as described above may be an electrode structure formed by patterning on the active layer 310, but the present invention is not necessarily limited thereto, and although not shown in the drawing, the active layer 310 is provided. The variable low resistance region 340 may be contacted through a via hole formed in the covering insulating layer.

21 is a cross-sectional view of an electronic device based on a variable low resistance region according to another embodiment of the present invention.

Referring to FIG. 21, in the electronic device 400 based on the variable low resistance region, a source 431 and a drain 432 are formed on a substrate 430, and an active layer including a spontaneous polarization material on the substrate 430 ( 410) can be placed. For example, the electronic device 400 may be a memory device.

The substrate 430 may be formed of a semiconductor wafer or, according to an embodiment, a silicon wafer. In addition, the source 431 and the drain 432 may be formed on a wafer by ion doping. Of course, although not shown in the drawing, an external signal line may be connected to the source 431 and the drain 432 through separate vias.

In this structure, the gate voltage and the application time may be determined so that the variable low resistance region 440 may be positioned corresponding to the regions of the source 431 and the drain 432 formed on the substrate 430.

The substrate 430 and the active layer 410 as described above may be bonded by a separate adhesive layer, but the present invention is not limited thereto, and the active layer 410 may be formed on the substrate 430. By implementing the active layer 410 as a thin film on the substrate 430 in this way, the memory device 400 can be further thinned, and an existing memory device process can be used, thereby further increasing the efficiency of the manufacturing process.

The variable low-resistance region 440 is formed between the first region 411 and the second region 412, which are regions in which polarization directions are different from each other, and a detailed description thereof will be omitted because it is similar to the above-described embodiment.

Although the first region 411 and the second region 412 have the same thickness, the present invention is not limited thereto.

The source and drain 431 and 432 may be formed to overlap the active layer 410 and to be spaced apart from the gate 420.

The source 431 and the drain 432 may be formed to overlap the variable low resistance region 440. For example, the source 431 and the drain 432 may be formed to contact the variable low resistance region 440.

Although not shown, the description of the energy level of FIG. 16 may be applied as it is to the present embodiment.

For example, the active layer 410 may be doped with an impurity, for example, a transition metal. By doping the transition metal, it is possible to control increasing or decreasing the value of the energy band gap of the active layer 410.

Through this, the overall electrical resistance of the electronic device can be reduced, and the on current value can be increased.

In addition, as another example, the overall electrical resistance of the electronic device may be increased, and the Off current value may be decreased.

Through this, it is possible to easily implement a structure of an electronic device having various electrical characteristics.

22 is a cross-sectional view of an electronic device based on a variable low resistance region according to another embodiment of the present invention.

For convenience of explanation, the description will focus on differences from the above-described embodiment.

Referring to FIG. 22, in the electronic device 500 based on the variable low resistance region, a source 531 and a drain 532 are formed on a substrate 530, and an active layer including a spontaneous polarization material on the substrate 530 ( 510) may be placed. For example, the electronic device 500 may be a memory device.

In the electronic device 500 of the embodiment shown in FIG. 22, the first region 511 may have a second thickness t2 that is thicker than the first thickness t1 of the second region 512. The second thickness t2 becomes a thickness at which the polarization direction is not switched by the voltage applied to the gate 520, and accordingly, the variable low resistance region 540 has a first thickness t1 and a second thickness ( It can be formed at a location that becomes the boundary of t2).

As described above, since the voltage applied to the gate 520 can be set as a voltage at which polarization switching is performed with respect to the first thickness t1, by creating a region formed with the second thickness t2 in the active layer 510 , The fluctuating low-resistance region 540 is not formed in the second thickness t2 even according to the intensity and time of the voltage applied to the gate 520, and only the fluctuating low-resistance region 540 is formed in the region of the first thickness t1. ) Can be formed.

That is, as shown in FIG. 22, the variable low resistance region 540 may be formed at a position that becomes a boundary between the first thickness t1 and the second thickness t2.

The active layer 510 may be disposed to overlap the source 531 and the drain 532, and as a specific example, the active layer 510 may contact the source 531 and the drain 532.

The source 531 and the drain 532 may be formed to overlap the active layer 510 and to be spaced apart from the gate 520.

The source 531 and the drain 532 may be formed to overlap the variable low resistance region 540. For example, the source 531 and the drain 532 may be formed to contact the variable low resistance region 540.

Although not shown, the description of the energy level of FIG. 16 may be applied as it is to the present embodiment.

For example, the active layer 510 may be doped with an impurity, for example, a transition metal. By doping the transition metal, it is possible to control increasing or decreasing the value of the energy band gap of the active layer 510.

Through this, the overall electrical resistance of the electronic device can be reduced, and the on current value can be increased.

In addition, as another example, the overall electrical resistance of the electronic device may be increased, and the Off current value may be decreased.

Through this, it is possible to easily implement a structure of an electronic device having various electrical characteristics.

23 is a cross-sectional view of an electronic device based on a variable low resistance region according to another embodiment of the present invention.

Referring to FIG. 23, in the electronic device 600 based on the variable low resistance region, a source 631 and a drain 632 are formed on a substrate 630, and an active layer including a spontaneous polarization material on the substrate 630 ( 610) may be disposed.

For example, the electronic device 600 may be a memory device.

The electronic device 600 of the embodiment shown in FIG. 23 also has a second thickness t2 in which the first region 611 is thicker than the first thickness t1 of the second region 612 as in the embodiment shown in FIG. 22. Can have.

At this time, depending on the time when the voltage is applied to the gate 620, as shown in FIG. 23, the first thickness t1 is formed from the boundary between the first thickness t1 and the second thickness t2. The low resistance region 640 may be located. Accordingly, in the memory device 600 having this structure, the source 631 and the drain 632 may be formed inside the boundary between the first thickness t1 and the second thickness t2. Accordingly, even if the formation position of the fluctuating low-resistance region 640 is changed according to the change of the intensity of the gate 620 voltage and/or the time, the fluctuating low-resistance region 640 and the source 631/drain 632 are Can be electrically connected.

In the above-described embodiments, the gate is formed adjacent to the active layer, but the present invention is not limited thereto.

The variable low-resistance region 640 is formed between the first region 611 and the second region 612, which are regions in which polarization directions are different from each other, and a detailed description thereof will be omitted because it is similar to the above-described embodiment.

The source 631 and the drain 632 may be formed to overlap the active layer 610 and to be spaced apart from the gate 620.

The source 631 and the drain 632 may be formed to overlap the variable low resistance region 640. For example, the source 631 and the drain 632 may be formed to contact the variable low resistance region 640.

Although not shown, the description of the energy level of FIG. 16 may be applied as it is to the present embodiment.

For example, the active layer 610 may be doped with an impurity, for example, a transition metal. By doping the transition metal, it is possible to control increasing or decreasing the value of the energy band gap of the active layer 610.

Through this, the overall electrical resistance of the electronic device can be reduced, and the on current value can be increased.

In addition, as another example, the overall electrical resistance of the electronic device may be increased, and the Off current value may be decreased.

Through this, it is possible to easily implement a structure of an electronic device having various electrical characteristics.

24 is a cross-sectional view of an electronic device based on a variable low resistance region according to another embodiment of the present invention.

Referring to FIG. 24, in the electronic device 700, another layer 750 may be further positioned between the active layer 710 and the gate 720. The layer 750 may be an insulating layer, but may be a material different from the ferroelectric material forming the active layer 710.

The electronic device 700 may be, for example, a memory device.

Even in this case, the polarization direction of the second region 712 can be switched under the influence of the electric field caused by the voltage applied to the gate 720, and at this time, the voltage of the gate 720 and/or the polarization direction can be switched. Alternatively, the time can be obtained by experimentation and/or calculation in advance. The descriptions of the variable low resistance region 740, the source 731, and the drain 732 are the same as those of the above-described embodiment, and thus a detailed description thereof will be omitted.

The variable low-resistance region 740 is formed between the first region 711 and the second region 712, which are regions in which polarization directions are different from each other, and a detailed description thereof will be omitted because it is similar to the above-described embodiment.

The source 731 and the drain 732 may be formed to overlap the active layer 710 and to be spaced apart from the gate 720.

The source 731 and the drain 732 may be formed to overlap the variable low resistance region 740. For example, the source 731 and the drain 732 may be formed to contact the variable low resistance region 740.

Although not shown, the description of the energy level of FIG. 16 may be applied as it is to the present embodiment.

For example, the active layer 710 may be doped with an impurity, for example, a transition metal. By doping the transition metal, it is possible to control increasing or decreasing the value of the energy band gap of the active layer 710.

Through this, the overall electrical resistance of the electronic device can be reduced, and the on current value can be increased.

In addition, as another example, the overall electrical resistance of the electronic device may be increased, and the Off current value may be decreased.

Through this, it is possible to easily implement a structure of an electronic device having various electrical characteristics.

25 is a cross-sectional view of an electronic device based on a variable low resistance region according to another embodiment of the present invention.

Referring to FIG. 25, in the variable low-resistance electronic device 800, a source 831 and a drain 832 are formed on a substrate 830, and an active layer 810 including a spontaneous polarization material on the substrate 830. ) Can be placed.

For example, the electronic device 800 may be a memory device.

* According to the embodiment shown in FIG. 25, a first gate 821 facing the active layer 810 and a second gate 822 positioned opposite to the first gate 821 around the active layer 810 are provided. Can include.

In this case, the variable low resistance region 840 may be formed by switching the polarization direction of the second region 812 by the first gate 821. This makes it possible to write data.

By switching the polarization direction of the second region 812 by the second gate 822 again as in the first region 811, the variable low resistance region 840 may be removed. This makes it possible to erase data.

In this way, data can be read at 0/1 by the first gate 821 and the second gate 822.

It goes without saying that all the embodiments of the present specification described above are not limited to the illustrated embodiments, and may be applied in combination with each other.

In addition, of course, these embodiments can be selectively applied or modified and applied to the embodiments to be described later.

The fluctuation low resistance region 840 is formed between the first region 811 and the second region 812, which are regions having different polarization directions, and a detailed description thereof will be omitted because it is similar to the above-described embodiment.

Although the first region 811 and the second region 812 have the same thickness, the present invention is not limited thereto.

The source 831 and the drain 832 may overlap the active layer 810 and may be formed to be spaced apart from the first gate 821 and the second gate 822.

The source 831 and the drain 832 may be formed to overlap the variable low resistance region 840. For example, the source 831 and the drain 832 may be formed to contact the variable low resistance region 840.

Although not shown, the description of the energy level of FIG. 16 may be applied as it is to the present embodiment.

For example, the active layer 810 may be doped with an impurity, for example, a transition metal. By doping the transition metal, it is possible to control increasing or decreasing the value of the energy band gap of the active layer 810.

Through this, the overall electrical resistance of the electronic device can be reduced, and the on current value can be increased.

In addition, as another example, the overall electrical resistance of the electronic device may be increased, and the Off current value may be decreased.

Through this, it is possible to easily implement a structure of an electronic device having various electrical characteristics.

26 and 27 are cross-sectional views schematically illustrating an example of an electronic device according to an embodiment of the present invention.

Referring to FIGS. 26 and 27, an electronic device 900 according to an embodiment of the present invention includes a first electrode 910, a second electrode 920 facing the first electrode 910, and a first electrode ( An active layer 930 interposed between the 910 and the second electrode 920 may be included.

At least one of the first electrode 910 and the second electrode 920 includes a first surface S1 closest to the active layer 930 and a second surface S2 spaced farthest from the active layer 930, In this case, the size of the horizontal cross-sectional area on the first surface S1 may be smaller than the size of the horizontal cross-sectional area on the second surface S2. For example, at least one of the first electrode 910 and the second electrode 920 may include at least one protrusion 912 protruding in a direction toward the other electrode.

26 and 27 illustrate that the first electrode 910 includes one protrusion 912 as an example, but the present invention is not limited thereto, and the protrusion 912 is formed on the second electrode 920. It may be formed or may be formed on both the first electrode 910 and the second electrode 920. In addition, a plurality of protrusions 912 may be formed. The protrusion 912 may be integrally formed with the first electrode 910.

The first electrode 910 and the second electrode 920 are made of a metal material such as platinum, gold, aluminum, silver, or copper, a conductive polymer such as PEDOT:PSS or polyaniline, and indium oxide (e.g., In ₂ O ₃ ), tin oxide (e.g. SnO ₂ ), zinc oxide (e.g. ZnO), indium oxide tin oxide alloy (e.g. In ₂ O _3- SnO ₂ ) or indium oxide zinc oxide (e.g. In ₂ O _3- ZnO) and the like may include metal oxides.

The active layer 930 may include a spontaneous polarization material. For example, the active layer 930 may include an insulating material and may include a ferroelectric material. That is, the active layer 930 may include a material having spontaneous electric polarization (electric dipole) that can be reversed in the presence of an electric field.

As an alternative embodiment the active layer 930 may comprise a perovskite-based material, for example, it may include _{BaTiO 3, SrTiO 3, BiFe3,} PbTiO3, PbZrO3, SrBi2Ta2O9.

In addition, as another example, the active layer 930 has an ABX3 structure, where A may include one or more materials selected from inorganic materials such as Cs, Ru, etc., capable of forming a CnH2n+1 alkyl group, and a perovskite solar cell structure, and B May include one or more materials selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce, and X may include a halogen material. As a specific example, the active layer 930 is CH ₃ NH ₃ PbI ₃ , CH ₃ NH ₃ PbI _x Cl _3-x , MAPbI _3, CH ₃ NH ₃ PbI _x Br _3-x , CH ₃ NH ₃ PbClxBr _3-x , HC (NH ₂ ) ₂ PbI ₃ , HC(NH ₂ ) ₂ PbI _x Cl _3-x , HC(NH ₂ ) ₂ PbI _x Br _3-x , HC(NH ₂ ) ₂ PbCl _x Br _3-x , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI ₃ , (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _1-y PbI _x Cl _3-x , (CH ₃ NH ₃ )(HC( NH ₂ ) ₂ ) _1-y PbI _x Br _3-x , or (CH ₃ NH ₃ )(HC(NH ₂ ) ₂ ) _{1-y PbCl x} Br _3-x (0≤x, y≤1) can do.

The active layer 930 has spontaneous polarization, and the degree and direction of polarization can be controlled according to the application of an electric field. In addition, the active layer 930 may maintain a polarized state even when the applied electric field is removed.

Meanwhile, the active layer 930 may include a first area A1 overlapping the first surface S1 in a vertical direction and a second area A2 outside the first area A1. As described above, since the horizontal cross-sectional area of the first surface S1 closest to the active layer 930 is narrower than the horizontal cross-sectional area of the second surface S2, the active layer 930 is vertical to the first surface S1. The thickness in the overlapping first area A1 may be smaller than the thickness in the second area A2.

As shown in FIG. 26, the active layer 930 may be in a state of having polarization in the first direction. For example, both the first region A1 and the second region A2 may have the same polarization in the first direction. In this state, current may not flow between the first electrode 910 and the second electrode 920 by the active layer 930.

However, when a first voltage greater than the coercive voltage at which the charge of the hysteresis loop of the active layer 930 becomes zero is applied to the first electrode 910 and the second electrode 920, as shown in FIG. Likewise, the polarization direction of the first region A1 is changed due to the first electric field generated between the first electrode 910 and the second electrode 920, and the active layer 930 has the first region A1 and the second electrode 920. It may be divided into an area A2.

At this time, since the magnitude of the voltage for changing the polarization direction of the domain of the active layer 930 increases in proportion to the thickness of the active layer 930, the second region A2 having a thickness greater than that of the first region A1 The polarization direction of the active layer 930 is not changed. That is, as a first voltage greater than the coercive voltage of the active layer 930 is applied to the first electrode 910 and the second electrode 920, polarization in the second direction different from the first direction only in the first region A1 Can have. For example, the first direction and the second direction may be opposite to each other.

On the other hand, when the polarization directions in the first region A1 and the second region A2 are opposite, the unit grid structure of the active layer 930 is localized at the boundary between the first region A1 and the second region A2. As it is changed to, an electric polarization different from that of the first region A1 and the second region A2 occurs, whereby free electrons accumulate at the boundary between the first region A1 and the second region A2, resulting in a current. A fluctuating low resistance region C that can flow may be created.

The fluctuating low resistance region C as described above is formed at the boundary between the first region A1 and the second region A2, and the first region A1 is changed by the area of the first surface S1. , The position at which the fluctuation low resistance region C is generated may also be adjusted by the area of the first surface S1.

On the other hand, when a second voltage for returning the polarization direction of the first region A1 is applied to the first electrode 910 and the second electrode 920, between the first electrode 910 and the second electrode 920 The first region A1 may have polarization in the first direction again due to the generated second electric field. The second voltage may be greater than the coercive voltage of the active layer 930 and may have a polarity opposite to the first voltage. Accordingly, a difference in polarization between the first region A1 and the second region A2 may be eliminated.

When the polarization difference between the first region A1 and the second region A2 disappears, the fluctuating low resistance region C between the first region A1 and the second region A2 disappears. This state is the same as the state shown in FIG. 26. That is, since the first electrode 910 and the second electrode 920 are insulated by the active layer 930, even if a voltage is applied between the first electrode 910 and the second electrode 920, the first electrode 910 and the second electrode 920 are insulated. Current does not flow between 910 and the second electrode 920.

Therefore, it is possible to control the voltage applied to the first electrode 910 and the second electrode 920 to control the flow of current in the electronic device 900, and the electronic device 900 Can be used for a variety of purposes.

For example, the electronic device 900 may be used as a nonvolatile memory. More specifically, as shown in FIG. 27, a first voltage greater than a coercive voltage is applied to the first electrode 910 and the second electrode 920, thereby changing the polarization direction of the first region A1. After the change, even if no voltage is applied to the first electrode 910 and the second electrode 920, the polarization direction of the first region A1 remains unchanged, and this state is set to a logic value of '1'. It can be understood that this has been entered.

On the other hand, since the fluctuating low resistance region C is formed when the polarization direction of the first region A1 is changed, when a read voltage is applied between the first electrode 910 and the second electrode 920, the current is easily reduced. It flows, and by this, the logical value '1' can be read. In this case, in order to prevent the polarization of the first region A1 from being affected by the read voltage, the read voltage may be smaller than the coercive voltage of the active layer 930.

In addition, when a second voltage is applied to the first electrode 910 and the second electrode 920 in order to restore the polarization direction of the first region A1, the polarization of the first region A1 and the second region A2 The direction becomes the same, and this state can be viewed as inputting a logic value of '0'.

In addition, when the polarization directions of the first region A1 and the second region A2 are the same, the fluctuating low resistance region C between the first region A1 and the second region A2 disappears. Accordingly, even if a voltage is applied between the first electrode 910 and the second electrode 920, current does not flow between the first electrode 910 and the second electrode 920, whereby the logic value '0' Can be read.

That is, when the electronic device 900 according to the present invention is used as a memory, the polarization state of the first region A1 is selectively changed by applying voltage to the first electrode 910 and the second electrode 920. , By measuring the current flowing in the fluctuating low-resistance region (C) that is generated or extinguished accordingly, the logic values '1' and '0' can be read. Data recording and reproducing speed compared to the method of measuring the residual polarization of the existing domains. Can be improved.

The first electrode 910 and the second electrode 920 may be formed to overlap the active layer 930 and to be spaced apart from each other.

The first electrode 910 and the second electrode 920 may be formed to overlap the variable low resistance region C in at least one region. For example, the first electrode 910 and the second electrode 920 may be formed to contact the variable low resistance region C.

Although not shown, the present embodiment can be applied by modifying the description of the energy level of FIG. 16 described above.

For example, the active layer 930 may be doped with an impurity, for example, a transition metal. By doping the transition metal, it is possible to control increasing or decreasing the value of the energy band gap of the active layer 930.

Through this, the overall electrical resistance of the electronic device can be reduced, and the on current value can be increased.

In addition, as another example, the overall electrical resistance of the electronic device may be increased, and the Off current value may be decreased.

Through this, it is possible to easily implement a structure of an electronic device having various electrical characteristics.

In addition, according to the present invention, the fluctuation low resistance region C generated by the application of an electric field may be formed only in a certain region. Therefore, the variable low resistance region C is formed only in a limited position without causing the phenomenon of increasing or expanding the domain region where the polarization state changes in proportion to the application time of the electric field. There is an advantage that you do not need to consider.

In addition, as the first electrode 910 and the second electrode 920 are stacked, the variable low resistance region C is formed with the shortest distance connecting the first electrode 910 and the second electrode 920. , As the size of the device is reduced, integration may be possible. In addition, since the magnitude of the current flowing when reading the logical values '1' and '0' is different, the readability of the data can be improved.

In addition, the electronic device 900 according to the present invention may constitute a circuit unit that generates and transmits various signals, and may be used as a switching device. For example, the ON/OFF of the current flow can be controlled by the generation and disappearance of the fluctuating low resistance region C. In addition, since the electronic device 900 according to the present invention can be applied in a simple structure to a part requiring control of an electrical signal, it can be applied to various fields such as variable circuits, CPUs, and biochips.

As another example, the electronic device 900 according to the present invention may be used in a capacitor capable of forming various current path control regions. For example, if the distance between the first electrode 910 and the second electrode 920 facing each other is formed in various ways, it varies according to the magnitude of the electric field applied to the first electrode 910 and the second electrode 920 The position at which the low resistance region C is formed may be variously adjusted, whereby the current path control regions may be variously formed in the storage battery.

In this case, a transition metal may be doped with respect to the active layer, and the energy band gap of the active layer may be increased or decreased.

Through this, it is possible to easily implement an efficient electronic device structure by reducing the resistance of the electronic device, and on the contrary, by increasing the specific resistance, it is possible to easily design an optimal electronic device having a desired resistance value.

28 to 30 are cross-sectional views schematically illustrating another example of the electronic device of FIGS. 26 and 27, respectively.

First, referring to FIG. 28, the electronic device 900B includes a first electrode 910, a second electrode 920 facing the first electrode 910, a first electrode 910 and a second electrode 920. It may include an active layer 930 interposed therebetween.

At least one of the first electrode 910 and the second electrode 920 may include a first surface S1 closest to the active layer 930 and a second surface S2 farthest from the active layer 930. I can. In this case, the size of the horizontal cross-sectional area on the first surface S1 may be smaller than the size of the horizontal cross-sectional area on the second surface S2.

For example, as shown in FIG. 28, the first electrode 910 may include a protrusion 912 protruding toward the second electrode 920. In addition, at least a portion of the protrusion 912 may have a tapered shape. The tapered shape may include a first surface S1. For example, the protrusion 912 may have a cone shape. However, the shape of the horizontal cross-section of the protrusion 912 is not limited to a circle, and may be various, such as a triangle, a square, or a polygon.

As such, when the protrusion 912 has a tapered shape including the first surface S1, a voltage for changing the polarization of the first region A1 is applied between the first electrode 910 and the second electrode 920 In this case, since the electric field can be concentrated between the first surface S1 and the second electrode 920, the polarization of the first region A1 can be changed more quickly and effectively.

The first electrode 910 and the second electrode 920 may be formed to overlap the active layer 930 and to be spaced apart from each other.

The first electrode 910 and the second electrode 920 may be formed to overlap the variable low resistance region C in at least one region. For example, the first electrode 910 and the second electrode 920 may be formed to contact the variable low resistance region C.

Although not shown, the present embodiment can be applied by modifying the description of the energy level of FIG. 16 described above.

For example, the active layer 930 may be doped with an impurity, for example, a transition metal. By doping the transition metal, it is possible to control increasing or decreasing the value of the energy band gap of the active layer 930.

Through this, the overall electrical resistance of the electronic device can be reduced, and the on current value can be increased.

In addition, as another example, the overall electrical resistance of the electronic device may be increased, and the Off current value may be decreased.

Through this, it is possible to easily implement a structure of an electronic device having various electrical characteristics.

FIG. 29 illustrates an electronic device 900C having a structure in which the first electrode 910 has a tapered shape, similar to that of FIG. 28. However, FIG. 29 shows an example in which the first electrode 910 has a tapered shape as a whole.

In addition, FIG. 30 shows an example in which both the first electrode 910 and the second electrode 920 have a tapered shape. Specifically, the first electrode 910 and the second electrode 920 of the electronic device 900D of FIG. 30 each include a first surface S1 and a second surface S2, and the first electrode 910 The first region A1 of the active layer 930 may be partitioned between the first surface S1 of the and the first surface S1 of the second electrode 920. In this case, it is preferable that the areas of the first surface S1 of the first electrode 910 facing each other and the first surface S1 of the second electrode 920 are the same for effective electric field induction.

31 to 36 are cross-sectional views schematically illustrating another example of the electronic device of FIGS. 26 and 27, respectively.

31 to 36 show the shape of the protrusion 912 of the first electrode 910, but as described above, the present invention relates to the first electrode (910 in FIG. 26) and/or the second electrode (FIG. 26). Since 920 may have a tapered shape as a whole, and the protrusion 912 may be integrally formed with the first electrode (910 in FIG. 26) and/or the second electrode (920 in FIG. 26), the following protrusion 912 ) May be understood as a part of the first electrode 910 and/or the second electrode 920.

FIG. 31 is a schematic cross-sectional view illustrating an example of a cross section II′ of the electronic device of FIG. 26.

31 shows an example in which both the protrusion 912 and the active layer 930 of the electronic device 900E have a circular cross section.

FIG. 32 is a schematic cross-sectional view illustrating another example of a cross section II' of the electronic device of FIG. 26.

In FIG. 32, the protrusion 912 of the electronic device 900F may have a rectangular cross-section, and the active layer 930 may have a cross-section similar to a circular shape.

FIG. 33 is a schematic cross-sectional view illustrating another example of a cross section II' of the electronic device of FIG.

33 illustrates an example in which both the protrusion 912 and the active layer 930 of the electronic device 900G have a rectangular cross section. That is, the protrusion 912 and the active layer 930 are not limited to the above shape, but may have various shapes.

FIG. 34 is a schematic cross-sectional view illustrating another example of a cross section II′ of the electronic device of FIG. 26.

34 shows an electronic device 900H including a first protrusion 912a and a second protrusion 912b. The first protrusion 912a and the second protrusion 912b may be spaced apart from each other, and different voltages may be applied. For example, when the second electrode (920 in FIG. 26) is integrally formed, two variable low resistance regions (C in FIG. 27) may be formed, so when the electronic element 900H is used as a memory, a logical value '0', '1', '2', and '3' can be recorded and read.

FIG. 35 is a schematic cross-sectional view illustrating another example of a cross section II' of the electronic device of FIG. 26.

FIG. 35 shows an electronic device 900I including a first protrusion 912a, a second protrusion 912b, a third protrusion 912c, and a fourth protrusion 912d. The first to fourth protrusions 912a to 912d may be electrically separated from each other. In addition, the first protrusion 912a, the second protrusion 912b, the third protrusion 912c, and the second electrode (920 in FIG. 30) facing the fourth protrusion 912d may be separated. Accordingly, when the electronic device 900H is used as a memory, the amount of data processed by the electronic device 900H may increase.

FIG. 36 is a cross-sectional view schematically illustrating another example of a cross section II' of the electronic device of FIG. 26.

36 shows an example in which the protrusion 912 of the electronic device 900J extends in one direction.

As described above, each electronic device has a different current value in each case and can store various information accordingly. In addition, it is possible to easily control the current according to the control of the electrical characteristics of the first electrode and the second electrode.

As described above, the present invention has been described with reference to the embodiments shown in the drawings, but these are only exemplary, and those of ordinary skill in the art will appreciate that various modifications and equivalent other embodiments are possible therefrom. . Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

Specific implementations described in the embodiments are examples, and do not limit the scope of the embodiments in any way. In addition, if there is no specific mention such as "essential", "important", etc., it may not be an essential component for the application of the present invention.

In the specification of the embodiment (especially in the claims), the use of the term "above" and the similar reference term may correspond to both the singular and the plural. In addition, when a range is described in an embodiment, the invention to which individual values falling within the range are applied (unless otherwise stated), it is the same as describing each individual value constituting the range in the detailed description. . Finally, if there is no clearly stated or contrary to the order of steps constituting the method according to the embodiment, the steps may be performed in an appropriate order. The embodiments are not necessarily limited according to the order of description of the steps. The use of all examples or illustrative terms (for example, etc.) in the embodiments is merely for describing the embodiments in detail, and the scope of the embodiments is limited by the above examples or illustrative terms unless limited by the claims. It is not. In addition, those skilled in the art can recognize that various modifications, combinations, and changes may be configured according to design conditions and factors within the scope of the appended claims or their equivalents.

100, 200, 300: electronic device
110, 210, 310: active layer
120, 220, 320: applied electrode
VL, VL1, VL2, C: fluctuating low resistance area

Claims (2)

An active layer comprising a spontaneously polarizable material and doped with at least one impurity;
An application electrode disposed adjacent to the active layer;
A polarization region formed in the active layer by applying an electric field to the active layer through the applying electrode;
At least one fluctuating low resistance region including a region having a lower electrical resistance than other adjacent regions corresponding to the boundary of the polarization region;
A first electrode spaced apart from the application electrode and connected to the variable low resistance region; And
And a second electrode spaced apart from the application electrode and connected to the variable low resistance region,
Wherein the variable low resistance region is formed to correspond to the entire thickness of the active layer in at least one region of the active layer. An active layer comprising a spontaneously polarizable material, an application electrode disposed adjacent to the active layer, and a polarization region formed in the active layer by applying an electric field to the active layer through the application electrode; One or more fluctuating low-resistance regions including regions having lower electrical resistance than other adjacent regions corresponding to the boundary of the polarization region, a first electrode spaced apart from the application electrode and connected to the fluctuating low-resistance region, and spaced apart from the application electrode And for an electronic device based on a variable low resistance region including a second electrode connected to the variable low resistance region,
Forming a polarized region of the active layer by applying an electric field to the active layer through the applying electrode;
Forming a step of forming a fluctuating low-resistance region including a region having a lower electrical resistance than other adjacent regions corresponding to the boundary of the polarization region to flow current between the first electrode and the second electrode through the fluctuating low-resistance region Allowing it to be formed; And
Doping one or more impurities to the active layer,
Wherein the variable low resistance region is formed to correspond to the entire thickness of the active layer in at least one region of the active layer.

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