KR102467442B1 - 더 낮은 막 응력 및 더 낮은 동작 온도를 위해 구성된 3d 프린팅된 챔버 컴포넌트들 - Google Patents
더 낮은 막 응력 및 더 낮은 동작 온도를 위해 구성된 3d 프린팅된 챔버 컴포넌트들 Download PDFInfo
- Publication number
- KR102467442B1 KR102467442B1 KR1020177025119A KR20177025119A KR102467442B1 KR 102467442 B1 KR102467442 B1 KR 102467442B1 KR 1020177025119 A KR1020177025119 A KR 1020177025119A KR 20177025119 A KR20177025119 A KR 20177025119A KR 102467442 B1 KR102467442 B1 KR 102467442B1
- Authority
- KR
- South Korea
- Prior art keywords
- features
- macro
- engineered
- chamber
- feature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012545 processing Methods 0.000 claims abstract description 81
- 239000000463 material Substances 0.000 claims description 87
- 125000006850 spacer group Chemical group 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 48
- 230000008569 process Effects 0.000 claims description 26
- 238000012546 transfer Methods 0.000 claims description 12
- 239000011800 void material Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 2
- 230000006698 induction Effects 0.000 description 45
- 239000000758 substrate Substances 0.000 description 30
- 238000004519 manufacturing process Methods 0.000 description 27
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 26
- 239000000654 additive Substances 0.000 description 25
- 230000008021 deposition Effects 0.000 description 20
- 238000000151 deposition Methods 0.000 description 19
- 238000010146 3D printing Methods 0.000 description 17
- 230000000996 additive effect Effects 0.000 description 17
- 238000005240 physical vapour deposition Methods 0.000 description 16
- 239000007789 gas Substances 0.000 description 13
- 239000010935 stainless steel Substances 0.000 description 10
- 229910001220 stainless steel Inorganic materials 0.000 description 10
- 239000000843 powder Substances 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 238000005422 blasting Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 230000001788 irregular Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- OZAIFHULBGXAKX-VAWYXSNFSA-N AIBN Substances N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000004005 microsphere Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000003361 porogen Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000000110 selective laser sintering Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 229920001661 Chitosan Polymers 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 229940082150 encore Drugs 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 210000001145 finger joint Anatomy 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000000017 hydrogel Substances 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000012254 powdered material Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y10/00—Processes of additive manufacturing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/3288—Maintenance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/10—Formation of a green body
- B22F10/14—Formation of a green body by jetting of binder onto a bed of metal powder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/10—Formation of a green body
- B22F10/18—Formation of a green body by mixing binder with metal in filament form, e.g. fused filament fabrication [FFF]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/20—Direct sintering or melting
- B22F10/25—Direct deposition of metal particles, e.g. direct metal deposition [DMD] or laser engineered net shaping [LENS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/20—Direct sintering or melting
- B22F10/28—Powder bed fusion, e.g. selective laser melting [SLM] or electron beam melting [EBM]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/30—Process control
- B22F10/32—Process control of the atmosphere, e.g. composition or pressure in a building chamber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F12/00—Apparatus or devices specially adapted for additive manufacturing; Auxiliary means for additive manufacturing; Combinations of additive manufacturing apparatus or devices with other processing apparatus or devices
- B22F12/70—Gas flow means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y80/00—Products made by additive manufacturing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Push-Button Switches (AREA)
- Ink Jet (AREA)
- Printing Methods (AREA)
- Braking Systems And Boosters (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562112649P | 2015-02-06 | 2015-02-06 | |
| US62/112,649 | 2015-02-06 | ||
| US201562184114P | 2015-06-24 | 2015-06-24 | |
| US62/184,114 | 2015-06-24 | ||
| PCT/US2016/013583 WO2016126403A1 (en) | 2015-02-06 | 2016-01-15 | 3d printed chamber components configured for lower film stress and lower operating temperature |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170115599A KR20170115599A (ko) | 2017-10-17 |
| KR102467442B1 true KR102467442B1 (ko) | 2022-11-14 |
Family
ID=56564502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020177025119A Active KR102467442B1 (ko) | 2015-02-06 | 2016-01-15 | 더 낮은 막 응력 및 더 낮은 동작 온도를 위해 구성된 3d 프린팅된 챔버 컴포넌트들 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10777391B2 (enExample) |
| EP (1) | EP3254305B1 (enExample) |
| JP (1) | JP6917894B2 (enExample) |
| KR (1) | KR102467442B1 (enExample) |
| CN (1) | CN107210179B (enExample) |
| DE (1) | DE202016009201U1 (enExample) |
| SG (2) | SG11201706207QA (enExample) |
| TW (1) | TWI725950B (enExample) |
| WO (1) | WO2016126403A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018052533A1 (en) * | 2016-09-13 | 2018-03-22 | Applied Materials, Inc. | Textured skin for chamber components |
| US10434604B2 (en) | 2016-10-14 | 2019-10-08 | Applied Materials, Inc. | Texturizing a surface without bead blasting |
| WO2019007488A1 (en) * | 2017-07-04 | 2019-01-10 | Cleanpart Group Gmbh | TREATMENT CHAMBER COMPONENT AND METHOD FOR FORMING SURFACE TEXTURE |
| DE102017126624A1 (de) | 2017-11-13 | 2019-05-16 | Trumpf Laser- Und Systemtechnik Gmbh | Schichtselektive belichtung im überhangbereich bei der generativen fertigung |
| US11685990B2 (en) | 2017-12-08 | 2023-06-27 | Applied Materials, Inc. | Textured processing chamber components and methods of manufacturing same |
| US11772323B2 (en) * | 2017-12-14 | 2023-10-03 | Carnegie Mellon University | Directed polymerization method to generate complex, three dimensional (3D) structures in soft materials |
| KR20250007702A (ko) * | 2018-04-17 | 2025-01-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 비드 블라스팅을 이용하지 않는 표면의 텍스처라이징 |
| JP7068921B2 (ja) | 2018-05-15 | 2022-05-17 | 東京エレクトロン株式会社 | 部品の形成方法及びプラズマ処理装置 |
| JP7138474B2 (ja) * | 2018-05-15 | 2022-09-16 | 東京エレクトロン株式会社 | 部品の修復方法及び基板処理システム |
| JP7319425B2 (ja) * | 2018-05-15 | 2023-08-01 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理装置用部品 |
| DE102019113001A1 (de) * | 2019-05-16 | 2020-11-19 | Wipotec Gmbh | Monolithischer Wägeblock |
| JP7467062B2 (ja) * | 2019-10-15 | 2024-04-15 | 東京エレクトロン株式会社 | シリコン部材の製造方法及び造形装置 |
| US11739411B2 (en) * | 2019-11-04 | 2023-08-29 | Applied Materials, Inc. | Lattice coat surface enhancement for chamber components |
| KR102340823B1 (ko) * | 2020-07-06 | 2021-12-20 | 주식회사 케이제이테크 | 반도체제조공정 건식식각장치의 SiC 포커스링 제조방법 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001509214A (ja) | 1997-01-16 | 2001-07-10 | ボトムフィールド，ロジャー，エル． | 蒸気蒸着構成要素及び対応する方法 |
| US20040056211A1 (en) | 2002-03-13 | 2004-03-25 | Applied Materials, Inc. | Method of surface texturizing |
| WO2005001918A1 (en) | 2003-06-11 | 2005-01-06 | Honeywell International Inc. | Traps for particle entrapment in deposition chambers |
| JP2005039279A (ja) | 2003-07-17 | 2005-02-10 | Applied Materials Inc | 表面テクスチャ化方法 |
| JP2007027707A (ja) | 2005-06-27 | 2007-02-01 | Applied Materials Inc | パーティクルの発生を削減するためのプロセスキットの設計 |
| US20120258280A1 (en) | 2011-04-11 | 2012-10-11 | Applied Materials, Inc. | Extended life textured chamber components and method for fabricating same |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4031545A1 (de) * | 1990-10-05 | 1992-04-09 | Hell Rudolf Dr Ing Gmbh | Verfahren und vorrichtung zur herstellung einer texturwalze |
| US5614071A (en) * | 1995-06-28 | 1997-03-25 | Hmt Technology Corporation | Sputtering shield |
| US7116366B1 (en) | 1999-08-31 | 2006-10-03 | Micron Technology, Inc. | CMOS aps pixel sensor dynamic range increase |
| JP2002319520A (ja) * | 2001-04-20 | 2002-10-31 | Murata Mfg Co Ltd | インダクタ及びその製造方法 |
| US6777045B2 (en) * | 2001-06-27 | 2004-08-17 | Applied Materials Inc. | Chamber components having textured surfaces and method of manufacture |
| US6933508B2 (en) * | 2002-03-13 | 2005-08-23 | Applied Materials, Inc. | Method of surface texturizing |
| US6955748B2 (en) * | 2002-07-16 | 2005-10-18 | Honeywell International Inc. | PVD target constructions comprising projections |
| US20040206804A1 (en) * | 2002-07-16 | 2004-10-21 | Jaeyeon Kim | Traps for particle entrapment in deposition chambers |
| CN1806316A (zh) * | 2003-06-11 | 2006-07-19 | 霍尼韦尔国际公司 | 沉积室中用于捕集粒子的阱 |
| US7943434B2 (en) * | 2008-03-21 | 2011-05-17 | Occam Portfolio Llc | Monolithic molded flexible electronic assemblies without solder and methods for their manufacture |
| PL2156941T3 (pl) * | 2008-08-21 | 2013-06-28 | Ge Avio Srl | Proces wytwarzania filtra, w szczególności dla separatora obrotowego oraz filtr otrzymany w tym procesie |
| US20130029480A1 (en) * | 2010-04-09 | 2013-01-31 | Frank Niklaus | Free form printing of silicon micro- and nanostructures |
| JP5989593B2 (ja) * | 2012-04-27 | 2016-09-07 | 日本碍子株式会社 | 半導体製造装置用部材 |
| US9099575B2 (en) * | 2013-07-16 | 2015-08-04 | Cree, Inc. | Solid state lighting devices and fabrication methods including deposited light-affecting elements |
-
2016
- 2016-01-15 KR KR1020177025119A patent/KR102467442B1/ko active Active
- 2016-01-15 JP JP2017541314A patent/JP6917894B2/ja active Active
- 2016-01-15 EP EP16746946.9A patent/EP3254305B1/en active Active
- 2016-01-15 WO PCT/US2016/013583 patent/WO2016126403A1/en not_active Ceased
- 2016-01-15 CN CN201680008925.8A patent/CN107210179B/zh active Active
- 2016-01-15 SG SG11201706207QA patent/SG11201706207QA/en unknown
- 2016-01-15 DE DE202016009201.5U patent/DE202016009201U1/de active Active
- 2016-01-15 SG SG10201907105SA patent/SG10201907105SA/en unknown
- 2016-01-19 TW TW105101562A patent/TWI725950B/zh active
- 2016-02-04 US US15/015,849 patent/US10777391B2/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001509214A (ja) | 1997-01-16 | 2001-07-10 | ボトムフィールド，ロジャー，エル． | 蒸気蒸着構成要素及び対応する方法 |
| US20040056211A1 (en) | 2002-03-13 | 2004-03-25 | Applied Materials, Inc. | Method of surface texturizing |
| WO2005001918A1 (en) | 2003-06-11 | 2005-01-06 | Honeywell International Inc. | Traps for particle entrapment in deposition chambers |
| JP2005039279A (ja) | 2003-07-17 | 2005-02-10 | Applied Materials Inc | 表面テクスチャ化方法 |
| JP2007027707A (ja) | 2005-06-27 | 2007-02-01 | Applied Materials Inc | パーティクルの発生を削減するためのプロセスキットの設計 |
| US20120258280A1 (en) | 2011-04-11 | 2012-10-11 | Applied Materials, Inc. | Extended life textured chamber components and method for fabricating same |
| JP2014518590A (ja) | 2011-04-11 | 2014-07-31 | アプライド マテリアルズ インコーポレイテッド | 寿命が長いテクスチャ加工チャンバ部品及びその作製方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20160233060A1 (en) | 2016-08-11 |
| WO2016126403A1 (en) | 2016-08-11 |
| US10777391B2 (en) | 2020-09-15 |
| SG11201706207QA (en) | 2017-08-30 |
| TW201636192A (zh) | 2016-10-16 |
| CN107210179A (zh) | 2017-09-26 |
| TWI725950B (zh) | 2021-05-01 |
| DE202016009201U1 (de) | 2024-01-18 |
| SG10201907105SA (en) | 2019-09-27 |
| EP3254305A4 (en) | 2018-10-03 |
| EP3254305B1 (en) | 2023-05-10 |
| CN107210179B (zh) | 2019-10-18 |
| JP6917894B2 (ja) | 2021-08-11 |
| JP2018507327A (ja) | 2018-03-15 |
| KR20170115599A (ko) | 2017-10-17 |
| EP3254305A1 (en) | 2017-12-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102467442B1 (ko) | 더 낮은 막 응력 및 더 낮은 동작 온도를 위해 구성된 3d 프린팅된 챔버 컴포넌트들 | |
| EP3140851B1 (en) | Collimator for use in substrate processing chambers | |
| TWI473197B (zh) | 具有介電材料及／或具有可變厚度，剖面圖及／或形狀之腔室之靜電夾頭組件，使用方法及具有靜電夾頭組件之裝置 | |
| US9147558B2 (en) | Finned shutter disk for a substrate process chamber | |
| US11685990B2 (en) | Textured processing chamber components and methods of manufacturing same | |
| US10872749B2 (en) | Textured skin for chamber components | |
| TWI795675B (zh) | 具有格狀塗佈表面強化的腔室元件 | |
| US11569069B2 (en) | 3D printed chamber components configured for lower film stress and lower operating temperature | |
| KR20160055989A (ko) | 플라즈마 처리 장치용 내부재 및 이의 제조 방법 | |
| US20220293392A1 (en) | Coil for improved process chamber deposition and etch uniformity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20170906 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20201224 Comment text: Request for Examination of Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20220228 Patent event code: PE09021S01D |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20220901 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20221110 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 20221110 End annual number: 3 Start annual number: 1 |
|
| PG1601 | Publication of registration |