KR102440303B1 - Cmp용 다층 연마 패드 - Google Patents

Cmp용 다층 연마 패드 Download PDF

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Publication number
KR102440303B1
KR102440303B1 KR1020167033896A KR20167033896A KR102440303B1 KR 102440303 B1 KR102440303 B1 KR 102440303B1 KR 1020167033896 A KR1020167033896 A KR 1020167033896A KR 20167033896 A KR20167033896 A KR 20167033896A KR 102440303 B1 KR102440303 B1 KR 102440303B1
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KR
South Korea
Prior art keywords
layer
polishing pad
polishing
layers
multilayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020167033896A
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English (en)
Korean (ko)
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KR20170015907A (ko
Inventor
브라이언 므르지글로드
자야크리쉬난 나이르
가레트 블레이크
Original Assignee
씨엠씨 머티리얼즈, 인코포레이티드
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Publication date
Application filed by 씨엠씨 머티리얼즈, 인코포레이티드 filed Critical 씨엠씨 머티리얼즈, 인코포레이티드
Publication of KR20170015907A publication Critical patent/KR20170015907A/ko
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Publication of KR102440303B1 publication Critical patent/KR102440303B1/ko
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Classifications

    • H01L21/30625—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B24D11/001—Manufacture of flexible abrasive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0045—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for by stacking sheets of abrasive material
    • H01L21/304—
    • H01L21/3212—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020167033896A 2014-05-07 2015-04-30 Cmp용 다층 연마 패드 Active KR102440303B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461989669P 2014-05-07 2014-05-07
US61/989,669 2014-05-07
US201462022770P 2014-07-10 2014-07-10
US62/022,770 2014-07-10
PCT/US2015/028503 WO2015171419A1 (en) 2014-05-07 2015-04-30 Multi-layer polishing pad for cmp

Publications (2)

Publication Number Publication Date
KR20170015907A KR20170015907A (ko) 2017-02-10
KR102440303B1 true KR102440303B1 (ko) 2022-09-05

Family

ID=54368476

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167033896A Active KR102440303B1 (ko) 2014-05-07 2015-04-30 Cmp용 다층 연마 패드

Country Status (7)

Country Link
US (1) US9818618B2 (https=)
EP (1) EP3140852B1 (https=)
JP (1) JP6574244B2 (https=)
KR (1) KR102440303B1 (https=)
CN (1) CN106575613B (https=)
TW (1) TWI626118B (https=)
WO (1) WO2015171419A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102777772B1 (ko) * 2018-11-27 2025-03-06 쓰리엠 이노베이티브 프로퍼티즈 컴파니 폴리싱 패드 및 시스템과 이의 제조 및 사용 방법
CN112238670B (zh) * 2020-10-16 2022-11-15 上海江丰平芯电子科技有限公司 一种研磨垫的制备方法
CN116847948A (zh) * 2020-12-22 2023-10-03 Cmc材料有限责任公司 具有带有聚合物型外壳的成孔剂的化学-机械抛光副垫

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5257478A (en) 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
JP2002303727A (ja) * 2001-04-06 2002-10-18 Nitto Denko Corp 偏光フィルムの製造方法
US20050276967A1 (en) * 2002-05-23 2005-12-15 Cabot Microelectronics Corporation Surface textured microporous polishing pads
US6884156B2 (en) * 2003-06-17 2005-04-26 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
US20070015448A1 (en) * 2003-08-07 2007-01-18 Ppg Industries Ohio, Inc. Polishing pad having edge surface treatment
WO2005035194A2 (en) * 2003-10-09 2005-04-21 Thomas West, Inc. Stacked pad and method of use
CN101678667A (zh) * 2007-04-03 2010-03-24 陶氏环球技术公司 用于地毯背衬应用的（真空辅助的）热膜层合
US20080274674A1 (en) * 2007-05-03 2008-11-06 Cabot Microelectronics Corporation Stacked polishing pad for high temperature applications
JP5585081B2 (ja) * 2008-05-16 2014-09-10 東レ株式会社 研磨パッド
WO2010082992A2 (en) * 2009-01-16 2010-07-22 Applied Materials, Inc. Polishing pad and system with window support
SG181889A1 (en) * 2009-12-30 2012-07-30 3M Innovative Properties Co Organic particulate loaded polishing pads and method of making and using the same
WO2011082155A2 (en) * 2009-12-30 2011-07-07 3M Innovative Properties Company Polishing pads including phase-separated polymer blend and method of making and using the same
US9067297B2 (en) * 2011-11-29 2015-06-30 Nexplanar Corporation Polishing pad with foundation layer and polishing surface layer
JP5893413B2 (ja) * 2012-01-17 2016-03-23 東洋ゴム工業株式会社 積層研磨パッドの製造方法
US9597769B2 (en) * 2012-06-04 2017-03-21 Nexplanar Corporation Polishing pad with polishing surface layer having an aperture or opening above a transparent foundation layer

Also Published As

Publication number Publication date
EP3140852A4 (en) 2018-01-10
WO2015171419A1 (en) 2015-11-12
TW201542317A (zh) 2015-11-16
US9818618B2 (en) 2017-11-14
JP6574244B2 (ja) 2019-09-11
EP3140852A1 (en) 2017-03-15
EP3140852B1 (en) 2021-07-28
CN106575613A (zh) 2017-04-19
TWI626118B (zh) 2018-06-11
US20150325451A1 (en) 2015-11-12
JP2017514718A (ja) 2017-06-08
CN106575613B (zh) 2019-12-17
KR20170015907A (ko) 2017-02-10

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