KR102437034B1 - 전기 전도성 도금을 위한 레이저 시딩 방법 - Google Patents
전기 전도성 도금을 위한 레이저 시딩 방법 Download PDFInfo
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- KR102437034B1 KR102437034B1 KR1020187030972A KR20187030972A KR102437034B1 KR 102437034 B1 KR102437034 B1 KR 102437034B1 KR 1020187030972 A KR1020187030972 A KR 1020187030972A KR 20187030972 A KR20187030972 A KR 20187030972A KR 102437034 B1 KR102437034 B1 KR 102437034B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/147—Semiconductor insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0502—Patterning and lithography
- H05K2203/0528—Patterning during transfer, i.e. without preformed pattern, e.g. by using a die, a programmed tool or a laser
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Laser Beam Processing (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662315913P | 2016-03-31 | 2016-03-31 | |
| US62/315,913 | 2016-03-31 | ||
| US201662407848P | 2016-10-13 | 2016-10-13 | |
| US62/407,848 | 2016-10-13 | ||
| PCT/US2017/025392 WO2017173281A1 (en) | 2016-03-31 | 2017-03-31 | Laser-seeding for electro-conductive plating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20180122462A KR20180122462A (ko) | 2018-11-12 |
| KR102437034B1 true KR102437034B1 (ko) | 2022-08-29 |
Family
ID=59966483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187030972A Active KR102437034B1 (ko) | 2016-03-31 | 2017-03-31 | 전기 전도성 도금을 위한 레이저 시딩 방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10957615B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP3437127A4 (cg-RX-API-DMAC7.html) |
| JP (2) | JP2019514207A (cg-RX-API-DMAC7.html) |
| KR (1) | KR102437034B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN108604575B (cg-RX-API-DMAC7.html) |
| TW (2) | TW202224211A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2017173281A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102018207181B4 (de) * | 2018-05-08 | 2023-06-29 | Hegla Boraident Gmbh & Co. Kg | Verfahren zum Markieren von Glastafeln, vorzugsweise von Einscheiben-Sicherheitsglastafeln |
| KR102391800B1 (ko) * | 2018-06-15 | 2022-04-29 | 주식회사 엘지화학 | 비정질 박막의 제조방법 |
| US11426818B2 (en) | 2018-08-10 | 2022-08-30 | The Research Foundation for the State University | Additive manufacturing processes and additively manufactured products |
| US11780210B2 (en) * | 2019-09-18 | 2023-10-10 | Intel Corporation | Glass dielectric layer with patterning |
| DE102019133955B4 (de) * | 2019-12-11 | 2021-08-19 | Lpkf Laser & Electronics Aktiengesellschaft | Verfahren zur Herstellung einer Verbundstruktur aus mindestens einer leitfähigen Struktur |
| EP4140042A4 (en) * | 2020-04-23 | 2024-04-24 | Akash Systems, Inc. | High-efficiency structures for improved wireless communications |
| LU102294B1 (en) * | 2020-12-17 | 2022-06-21 | Fyzikalni Ustav Av Cr V V I | A method and a device for assembly of a nanomaterial structure |
| KR20230136621A (ko) * | 2021-02-11 | 2023-09-26 | 아이오 테크 그룹 엘티디. | 레이저 시스템에 의한 pcb 생산 |
| US11877398B2 (en) * | 2021-02-11 | 2024-01-16 | Io Tech Group Ltd. | PCB production by laser systems |
| US20220266382A1 (en) * | 2021-02-25 | 2022-08-25 | Electro Scientific Industries, Inc. | Laser-seeding for electro-conductive plating |
| US11705365B2 (en) * | 2021-05-18 | 2023-07-18 | Applied Materials, Inc. | Methods of micro-via formation for advanced packaging |
| US20220399206A1 (en) * | 2021-06-11 | 2022-12-15 | V-Finity Inc. | Method for building conductive through-hole vias in glass substrates |
| US20220406725A1 (en) * | 2021-06-17 | 2022-12-22 | Intel Corporation | Glass package core with planar structures |
| CN113410339B (zh) * | 2021-06-18 | 2023-08-15 | 中科检测技术服务(重庆)有限公司 | 一种高稳定性纳米铜导电薄膜的制备及其应用 |
| EP4120023A1 (en) | 2021-07-15 | 2023-01-18 | Wuhan Dr Laser Technology Corp., Ltd. | Pattern transfer sheet, method of monitoring pattern transfer printing, and pattern transfer printing system |
| IL297544A (en) | 2021-10-22 | 2023-05-01 | Wuhan Dr Laser Tech Corp Ltd | Sheets and methods for transferring a pattern with a release layer and/or paste mixtures |
| US12349497B2 (en) * | 2021-12-27 | 2025-07-01 | Wuhan Dr Laser Technology Corp,. Ltd | Pattern transfer printing of multi-layered features |
| EP4201574A1 (en) * | 2021-12-27 | 2023-06-28 | Wuhan Dr Laser Technology Corp., Ltd. | Pattern transfer printing of multi-layered features |
| IL289428B2 (en) * | 2021-12-27 | 2025-10-01 | Wuhan Dr Laser Tech Corp Ltd | Transfer printing of multi-layered details |
| TWI846031B (zh) * | 2022-08-25 | 2024-06-21 | 華龍國際科技股份有限公司 | 可吸收電路板變形量的均熱片及形成該均熱片的製造方法 |
| KR20240031738A (ko) * | 2022-09-01 | 2024-03-08 | 주식회사 익스톨 | 관통 비아 금속 배선 형성방법 |
| US20240312888A1 (en) * | 2023-03-14 | 2024-09-19 | Intel Corporation | Via structures in bonded glass substrates |
| US20240332155A1 (en) * | 2023-03-31 | 2024-10-03 | Intel Corporation | Substrates with a glass core and glass buildup layers |
| WO2025078814A1 (en) * | 2023-10-10 | 2025-04-17 | Johnson Matthey Public Limited Company | Method of coating a catalyst on flat or textured substrates |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020197401A1 (en) * | 1999-01-27 | 2002-12-26 | Auyeung Reymond C.Y. | Laser forward transfer of rheological systems |
| WO2006100790A1 (ja) * | 2005-03-22 | 2006-09-28 | Cluster Technology Co., Ltd. | 配線基板の製造方法及び配線基板 |
| US20090057156A1 (en) * | 2007-08-30 | 2009-03-05 | Hitachi Cable, Ltd. | Production method for wiring and vias |
| US20090108455A1 (en) * | 2007-10-24 | 2009-04-30 | Intel Corporation | Integrated circuit and process for fabricating thereof |
| JP2010533977A (ja) * | 2007-07-17 | 2010-10-28 | スリーエム イノベイティブ プロパティズ カンパニー | 基材のパターニング方法 |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5266446A (en) * | 1990-11-15 | 1993-11-30 | International Business Machines Corporation | Method of making a multilayer thin film structure |
| US6815015B2 (en) | 1999-01-27 | 2004-11-09 | The United States Of America As Represented By The Secretary Of The Navy | Jetting behavior in the laser forward transfer of rheological systems |
| JP2001102724A (ja) * | 1999-09-30 | 2001-04-13 | Ngk Spark Plug Co Ltd | 配線基板の製造方法 |
| JPWO2003007370A1 (ja) * | 2001-07-12 | 2004-11-04 | 株式会社日立製作所 | 配線ガラス基板およびその製造方法ならびに配線ガラス基板に用いられる導電性ペーストおよび半導体モジュールならびに配線基板および導体形成方法 |
| WO2003011479A1 (en) * | 2001-08-02 | 2003-02-13 | Mykrolis Corporation | Selective electroless deposition and interconnects made therefrom |
| GB2381274A (en) * | 2001-10-29 | 2003-04-30 | Qinetiq Ltd | High resolution patterning method |
| CN1195397C (zh) * | 2002-06-06 | 2005-03-30 | 华中科技大学 | 一种电路板制作和修复方法 |
| JP4031704B2 (ja) * | 2002-12-18 | 2008-01-09 | 東京エレクトロン株式会社 | 成膜方法 |
| JP2007525011A (ja) * | 2003-06-26 | 2007-08-30 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 基材上に充填誘電体材料のパターンを形成するための方法 |
| JP4235945B2 (ja) * | 2003-08-29 | 2009-03-11 | 独立行政法人理化学研究所 | 金属配線形成方法および金属配線形成装置 |
| US7358169B2 (en) | 2005-04-13 | 2008-04-15 | Hewlett-Packard Development Company, L.P. | Laser-assisted deposition |
| US7994021B2 (en) * | 2006-07-28 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| CN101121575B (zh) | 2007-07-06 | 2010-11-03 | 中国科学院上海光学精密机械研究所 | 利用飞秒激光实现玻璃表面选择性金属化的方法 |
| US8728589B2 (en) * | 2007-09-14 | 2014-05-20 | Photon Dynamics, Inc. | Laser decal transfer of electronic materials |
| US7666568B2 (en) * | 2007-10-23 | 2010-02-23 | E. I. Du Pont De Nemours And Company | Composition and method for providing a patterned metal layer having high conductivity |
| US8017022B2 (en) * | 2007-12-28 | 2011-09-13 | Intel Corporation | Selective electroless plating for electronic substrates |
| JP5238544B2 (ja) * | 2008-03-07 | 2013-07-17 | 株式会社半導体エネルギー研究所 | 成膜方法及び発光装置の作製方法 |
| EP2197253A1 (en) * | 2008-12-12 | 2010-06-16 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO | Method for electric circuit deposition |
| WO2011011764A2 (en) * | 2009-07-23 | 2011-01-27 | Gigasi Solar, Inc. | Systems, methods and materials involving crystallization of substrates using a seed layer, as well as products produced by such processes |
| JP2011129345A (ja) * | 2009-12-17 | 2011-06-30 | Fujifilm Corp | 光熱変換シート、並びに、それを用いた有機電界発光素材シート、及び有機電界発光装置の製造方法 |
| JP2011178642A (ja) * | 2010-03-03 | 2011-09-15 | Nippon Sheet Glass Co Ltd | 貫通電極付きガラス板の製造方法および電子部品 |
| FR2957916B1 (fr) | 2010-03-29 | 2018-02-09 | Universite Des Sciences Et Technologies De Lille | Procede de metallisation selective d'un monolithe de verre a base de silice, et produit obtenu par ce procede |
| WO2011145930A1 (en) | 2010-05-17 | 2011-11-24 | Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno | Through silicon via treatment device and method for treatment of tsvs in a chip manufacturing process |
| US8552564B2 (en) * | 2010-12-09 | 2013-10-08 | Intel Corporation | Hybrid-core through holes and vias |
| EP2660352A1 (en) | 2012-05-02 | 2013-11-06 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Donor sheet and method for light induced forward transfer manufacturing |
| US9526184B2 (en) * | 2012-06-29 | 2016-12-20 | Viasystems, Inc. | Circuit board multi-functional hole system and method |
| EP2685515A1 (en) * | 2012-07-12 | 2014-01-15 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Method and system for dividing a barrier foil |
| US10023955B2 (en) * | 2012-08-31 | 2018-07-17 | Fei Company | Seed layer laser-induced deposition |
| JP2014165263A (ja) * | 2013-02-22 | 2014-09-08 | Seiren Co Ltd | 透明電極材の製造方法 |
| US9130016B2 (en) * | 2013-04-15 | 2015-09-08 | Schott Corporation | Method of manufacturing through-glass vias |
| EP2824699A1 (en) | 2013-07-08 | 2015-01-14 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Providing a chip die with electrically conductive elements |
| CN105705671B (zh) * | 2013-10-14 | 2019-10-29 | 奥宝科技股份有限公司 | 多组成材料结构的lift印刷 |
| JP6665386B2 (ja) * | 2013-12-15 | 2020-03-13 | オーボテック リミテッド | プリント回路配線の修復 |
| JP2015138921A (ja) * | 2014-01-24 | 2015-07-30 | 日本ゼオン株式会社 | 電子材料用基板 |
| US9646854B2 (en) * | 2014-03-28 | 2017-05-09 | Intel Corporation | Embedded circuit patterning feature selective electroless copper plating |
| US20150309600A1 (en) * | 2014-04-23 | 2015-10-29 | Uni-Pixel Displays, Inc. | Method of fabricating a conductive pattern with high optical transmission, low reflectance, and low visibility |
| CN106414791A (zh) * | 2014-05-27 | 2017-02-15 | 奥博泰克有限公司 | 藉由激光诱发正向转印以印刷三维结构 |
| JP5859075B1 (ja) * | 2014-08-07 | 2016-02-10 | 株式会社 M&M研究所 | 配線基板の製造方法、配線基板及び配線基板製造用の分散液 |
-
2017
- 2017-03-31 US US16/067,693 patent/US10957615B2/en not_active Expired - Fee Related
- 2017-03-31 WO PCT/US2017/025392 patent/WO2017173281A1/en not_active Ceased
- 2017-03-31 EP EP17776782.9A patent/EP3437127A4/en not_active Withdrawn
- 2017-03-31 TW TW111105458A patent/TW202224211A/zh unknown
- 2017-03-31 JP JP2018551419A patent/JP2019514207A/ja not_active Ceased
- 2017-03-31 KR KR1020187030972A patent/KR102437034B1/ko active Active
- 2017-03-31 TW TW106111099A patent/TWI757279B/zh not_active IP Right Cessation
- 2017-03-31 CN CN201780011096.3A patent/CN108604575B/zh not_active Expired - Fee Related
-
2022
- 2022-10-13 JP JP2022164917A patent/JP2023011656A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020197401A1 (en) * | 1999-01-27 | 2002-12-26 | Auyeung Reymond C.Y. | Laser forward transfer of rheological systems |
| WO2006100790A1 (ja) * | 2005-03-22 | 2006-09-28 | Cluster Technology Co., Ltd. | 配線基板の製造方法及び配線基板 |
| JP2010533977A (ja) * | 2007-07-17 | 2010-10-28 | スリーエム イノベイティブ プロパティズ カンパニー | 基材のパターニング方法 |
| US20090057156A1 (en) * | 2007-08-30 | 2009-03-05 | Hitachi Cable, Ltd. | Production method for wiring and vias |
| US20090108455A1 (en) * | 2007-10-24 | 2009-04-30 | Intel Corporation | Integrated circuit and process for fabricating thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3437127A4 (en) | 2019-11-27 |
| JP2019514207A (ja) | 2019-05-30 |
| US20190019736A1 (en) | 2019-01-17 |
| TWI757279B (zh) | 2022-03-11 |
| US10957615B2 (en) | 2021-03-23 |
| CN108604575A (zh) | 2018-09-28 |
| TW201737512A (zh) | 2017-10-16 |
| CN108604575B (zh) | 2023-05-26 |
| TW202224211A (zh) | 2022-06-16 |
| JP2023011656A (ja) | 2023-01-24 |
| WO2017173281A1 (en) | 2017-10-05 |
| KR20180122462A (ko) | 2018-11-12 |
| EP3437127A1 (en) | 2019-02-06 |
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