KR102429251B1 - Sputtering target and manufacturing method of sputtering target - Google Patents

Abstract

Provided is a sputtering target in which particles and abnormal discharge are suppressed even if it is long and cylindrical. In the sputtering target, a target body includes a plurality of target members juxtaposed along an outer peripheral surface of a tube-shaped backing tube and having an arc-shaped cross section. Each of the plurality of target members is disposed so as to be spaced apart around the central axis of the backing tube. A gap formed between the target members arranged around the central axis extends in the central axis direction of the backing tube. The bonding material is inserted between the backing tube and the target body, and joins each of the backing tube and the plurality of target members. The shielding member is provided between the bonding material and the target body, and shields the gap from the side of the bonding material.

Description

Sputtering target and manufacturing method of sputtering target

The present invention relates to a sputtering target and a method for manufacturing the sputtering target.

The size of the sputtering target used when manufacturing a flat panel display is advancing with the enlargement of a slim type television. Accordingly, oxide targets of large areas are emerging. In particular, a film forming apparatus in which a long and cylindrical oxide target is mounted has been developed. In order to obtain an elongated cylindrical oxide target, a method of joining a plurality of cylindrical oxide sintered bodies to a cylindrical backing tube is provided.

However, when a sputtering target is comprised from several target member, by thermal expansion of a target member, adjacent target members may contact, and a crack (crack) may generate|occur|produce in a target member. In order to prevent the crack by this contact, the clearance gap may be provided between adjacent target members (refer patent document 1, for example).

Japanese Laid-Open Patent Publication No. 2015-168832

However, when particles are generated from the gap or a component other than an oxide adheres to the gap, an abnormal discharge occurs, which adversely affects the film forming process. In particular, in order to obtain an elongate cylindrical target, it is necessary to arrange|position several cylindrical target members in a row shape, but the number of gaps increases by that much.

In view of the above circumstances, an object of the present invention is to provide a sputtering target in which particles and abnormal discharge are suppressed even if it is long and cylindrical, and a method for manufacturing the same.

In order to achieve the said object, the sputtering target which concerns on 1 aspect to this invention is equipped with a tube-shaped backing tube, a target body, a bonding material, and a shielding member.

The target body includes a plurality of target members arranged in parallel along the outer circumferential surface of the backing tube and having an arc-shaped cross section. Each of the plurality of target members is disposed so as to be spaced apart around the central axis of the backing tube. A gap formed between the target members arranged around the central axis extends in the central axis direction of the backing tube.

The said bonding material is provided between the said backing tube and the said target body, and joins each of the said backing tube and the said some target member.

The shielding member is provided between the bonding material and the target body, and shields the gap from the side of the bonding material.

According to such a sputtering target, a target main body contains the some target member which has an arc-shaped cross section, Each of the some target member is arrange|positioned so that it may be spaced apart around the central axis of a backing tube, The target member lined up around the central axis. A gap formed therebetween extends in the direction of the central axis of the backing tube. Thereby, even if the sputtering target is long and cylindrical, an increase in the volume of the gap can be suppressed, and particles and abnormal discharge are suppressed.

In the sputtering target, the target body surrounds the backing tube by a set of target members. When the set of target members is cut in a direction orthogonal to the central axis direction of the backing tube, the central axis of the backing tube is positioned between the pair of gaps formed between the set of target members. may be

According to such a sputtering target, since the central axis of the backing tube is located between a pair of gaps formed between a set of target members, even if a sputtering target is long and cylindrical, the volume increase of a gap can be suppressed, and a particle , abnormal discharge is suppressed.

In the sputtering target, a plurality of the target body may be arranged in a column shape in the central axis direction of the backing tube.

According to such a sputtering target, a sputtering target is formed further longer.

In the said sputtering target, each of the said some target member may be comprised with the sintered compact of an oxide.

According to such a sputtering target, even if each of a some target member is comprised with the sintered compact of an oxide, the particle of a sputtering target and abnormal discharge are suppressed.

In the sputtering target, the sintered body may include In, Ga, and Zn.

According to such a sputtering target, since a sintered compact has In, Ga, and Zn, a stable oxide semiconductor film is formed.

In order to achieve the above object, in the method for manufacturing a sputtering target according to one aspect of the present invention, an outer circumferential surface revolving around a central axis is configured to have the same curvature as an outer circumferential surface of the backing tube, and a circle having a convex portion protruding outward from the outer circumferential surface The mandrel is a columnar mandrel, wherein when the outer circumferential surface is surrounded by a tubular frame, a space formed by the outer circumferential surface and the frame is defined by the convex portion into a plurality of space portions around the central axis.

The plurality of space portions are formed by the mandrel and the frame.

Powder is filled in each of the plurality of space portions.

A molded body is formed by the powder by isotropically applying pressure to the powder through the mold.

By heating the compact, a sintered compact in which the powder is sintered is formed.

According to the manufacturing method of such a sputtering target, even if a sputtering target is long and cylindrical, the volume increase of the clearance gap can be suppressed, and the sputtering target in which the particle and abnormal discharge were suppressed is manufactured reliably.

In the sputtering target manufacturing method, the space may be defined by a pair of space portions arranged around the central axis by the convex portion.

According to the manufacturing method of such a sputtering target, since the space is defined by a pair of space portions lining up around the central axis by the convex portion, even if the sputtering target is long and cylindrical, the increase in the volume of the gap can be suppressed. The sputtering target in which abnormal discharge was suppressed is manufactured reliably.

In the manufacturing method of the sputtering target, the molded body is mounted on the support so that the longitudinal direction of the molded body formed by filling the pair of space portions is parallel to the support surface of the support for supporting the molded body,

A support jig composed of the same component as the molded body is interposed between the support and the contact surface in contact with the outer circumferential surface of the mandrel,

The molded body may be fired while supporting the contact surface by the support jig.

According to the manufacturing method of such a sputtering target, since the molded body is supported by a support jig composed of the same component as the molded body and the molded body is fired, even in a cylindrical shape, the volume increase of the gap can be suppressed, and particles and abnormal discharge are suppressed. The target is reliably manufactured.

As described above, according to the present invention, there is provided a sputtering target in which particles and abnormal discharge are suppressed even if it is long and cylindrical, and a method for manufacturing the same.

Fig. 1 (a) is a schematic perspective view of the sputtering target according to the present embodiment, and (b) is a schematic cross-sectional view of the sputtering target according to the present embodiment.
2 is a schematic cross-sectional view showing the cross-sectional structure of the shielding member.
It is a schematic perspective view which shows the manufacturing jig used by the manufacturing method of a sputtering target.
4 is a schematic cross-sectional view showing another manufacturing jig used in the method for manufacturing a sputtering target.
Fig.5 (a) is a schematic perspective view which shows the molded object which is a precursor of a target main body, (b) is a schematic perspective view which shows the state at the time of sintering a molded object.
It is a schematic diagram which shows the state which fills the bonding material between a target main body and a backing tube.
7 is a schematic perspective view of a sputtering target according to Modification 1 of the present embodiment.
8 is a schematic cross-sectional view of a sputtering target according to a second modification of the present embodiment.
It is a schematic diagram which shows the other state which fills a bonding material between a target main body and a backing tube.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described, referring drawings. XYZ coordinates may be introduced in each drawing. In addition, the same code|symbol is attached|subjected to the same member or the member which has the same function, and after demonstrating the member, description may be abbreviate|omitted suitably.

Fig. 1 (a) is a schematic perspective view of the sputtering target according to the present embodiment, and (b) is a schematic cross-sectional view of the sputtering target according to the present embodiment. Fig. 1 (b) shows a cross section in the X-Y axis plane of Fig. 1 (a).

The sputtering target 1 shown in FIG. 1 is a cylindrical target assembly used for sputtering film formation. The sputtering target 1 includes a backing tube 10 , a target body 20 , a bonding material 30 , and a shielding member 40 .

The backing tube 10 is a cylindrical body, and the inside is hollow. The backing tube 10 extends in a uniaxial direction (eg, in the direction of the central axis 10c). The direction of the central axis 10c is the longitudinal direction of the backing tube 10 . Moreover, since the backing tube 10 is a base material of the sputtering target 1, the central axis 10c is also the central axis of the sputtering target 1.

The backing tube 10 is located on the opposite side to the outer peripheral surface 101 and the outer peripheral surface 101 which goes around the periphery of the central axis 10c, and has the inner peripheral surface 102 which goes around the periphery of the central axis 10c. When the backing tube 10 is cut|disconnected in the plane (for example, X-Y-axis plane) orthogonal to the central axis 10c, the shape becomes annular, for example.

The material of the backing tube 10 has a material excellent in thermal conductivity, and is, for example, titanium (Ti), copper (Cu), or the like. A flow path through which the refrigerant flows may be appropriately formed inside the backing tube 10 .

The target body 20 surrounds the outer peripheral surface 101 of the backing tube 10 . The target body 20 is disposed concentrically with respect to the backing tube 10 . The target body 20 has a plurality of target members. For example, in the example of FIG. 1, the target main body 20 has one set of target member 20A, 20B.

Each of the target members 20A and 20B surrounds the backing tube 10 . For example, the target members 20A, 20B are arranged side by side so as to follow the outer peripheral surface 101 of the backing tube 10 . When each of target member 20A, 20B is cut|disconnected by the X-Y-axis plane, the shape becomes circular arc shape, for example. For example, each cross-sectional shape of target member 20A, 20B in an X-Y-axis plane is carrying out the same shape. Moreover, each length of target member 20A, 20B in Z-axis is the same.

Each of target member 20A, 20B is arrange|positioned so that it may space apart around the periphery of the central axis 10c of the backing tube 10, without mutual contact. For example, the target members 20A and 20B are arranged in parallel around the central axis 10c of the backing tube 10 . In other words, the target body 20 has a divided structure divided in a direction orthogonal to the central axis 10c. Thereby, the clearance gap (division part) 201 is formed between the target member 20A and the target member 20B.

For example, when target member 20A, 20B is cut|disconnected in the direction orthogonal to the direction of the central axis 10c, a pair of clearance gap 201 is formed between each of target member 20A, 20B. . Each of the pair of gaps 201 is parallel to each other and extends in the direction of the central axis 10c of the backing tube 10 . Moreover, between a pair of clearance gaps 201, the central axis 10c of the backing tube 10 is located. For example, in the X-Y axis plane, the pair of gaps 201 and the central axis 10c are arranged in series.

It does not specifically limit about the width|variety of the clearance gap 201, For example, it is set to such an extent that they do not mutually contact by the thermal expansion of target member 20A, 20B.

The target members 20A and 20B are made of the same material. For example, it is comprised by the sintered compact of an oxide. As an example, the sintered body has In and Zn. For example, the sintered body is made of In-Ga-Zn-O (IGZO). For example, the sintered body may be an In-Ti-Zn-Sn-O (ITZTO) sintered body, an In-Ti-Zn-Sn-O (IGTO) sintered body, or the like.

The bonding material 30 is inserted between the backing tube 10 and the target body 20 . The bonding material 30 is in close contact with the backing tube 10 and the target body 20 . The bonding material 30 bonds each of the backing tube 10 and some target member 20A, 20B. The bonding material 30 includes, for example, indium (In), tin (Sn), a solder material, or the like.

The shielding member 40 is installed between the bonding material 30 and the target body 20 . The shielding member 40 is positioned between the gap 201 and the bonding material 30 . The shielding member 40 shields the gap 201 from the side of the bonding material 30 . Thereby, leakage of the bonding material 30 into the gap 201 is suppressed, and it becomes difficult for the bonding material 30 to penetrate into the clearance gap 201 . Further, even if the gap 201 is exposed to the plasma during sputtering, the bonding material 30 is shielded from the plasma by the shielding member 40 . Thereby, it becomes difficult for the component (for example, In) of the bonding material 30 to mix with the component of the target main body 20 at the time of sputtering.

A specific configuration of the shielding member 40 will be described below. 2 is a schematic cross-sectional view showing the cross-sectional structure of the shielding member.

The shielding member 40 may be the shielding member 40A shown in FIG.2(a), or the shielding member 40B shown in FIG.2(b) may be sufficient as it.

The shielding member 40A shown to Fig.2 (a) has the adhesive sheet 401 which has adhesiveness, and the resin sheet 402 which has plasma resistance. The resin sheet 402 is provided between the target members 20A and 20B and the adhesive sheet 401 . The resin sheet 402 is a shielding base material of the shielding member 40A. The adhesive sheet 401 is an adhesive agent of the shielding member 40A.

The resin sheet 402 crosses the gap 201 , and a part thereof is exposed through the gap 201 . The resin sheet 402 is affixed to each of the target members 20A and 20B from the side of the bonding material 30 by means of an adhesive sheet 401 . Each material of the pressure-sensitive adhesive sheet 401 and the resin sheet 402 includes, for example, polyimide, fluororesin, silicone resin, and the like.

The shielding member 40B shown in FIG. 2B has an adhesive sheet 401 , a metal sheet 403 , and an oxide layer 404 . The shielding member 40B has a laminated structure arranged in the order of the pressure-sensitive adhesive sheet 401/metal sheet 403/oxide layer 404 from the bonding material 30 toward the target members 20A and 20B. In the shielding member 40B, the metal sheet 403 bonds the pressure-sensitive adhesive sheet 401 and the oxide layer 404 to each other and functions as an intermediate layer for relieving each stress, and the oxide layer 404 functions as a shielding material.

The oxide layer 404 traverses the gap 201 , a portion of which is exposed as the gap 201 . Moreover, the oxide layer 404 is affixed from the side of the bonding material 30 to each of target members 20A, 20B with the adhesive sheet 401 via the metal sheet 403.

The metal sheet 403 includes, for example, titanium (Ti). The oxide layer 404 is made of the same material as the target members 20A and 20B. Thereby, even if the shielding member 40B is exposed to plasma at the time of sputtering, it becomes difficult for components other than the component of the target main body 20 to mix in a film.

The manufacturing method of the sputtering target 1 is demonstrated.

It is a schematic perspective view which shows the manufacturing jig used by the manufacturing method of a sputtering target.

First, the cylindrical mandrel 5 shown in FIG. 3 is prepared. The mandrel 5 extends in the direction of the central axis 5c and the direction of the central axis 5c becomes the longitudinal direction of the mandrel 5 . In the mandrel 5, the outer peripheral surface 51 revolves around the central axis 5c, and the outer peripheral surface 51 is comprised with the same curvature as the outer peripheral surface 101 of the backing tube 10. As shown in FIG. Further, the mandrel 5 is provided with a convex portion 52 protruding outward from the outer peripheral surface 51 on the outer peripheral surface 51 . For example, a plurality of convex portions 52 are provided on the outer peripheral surface 51 . For example, in the example of FIG. 3, a pair of convex parts 52 are provided in the circumference|surroundings of the central axis 5c at intervals of 180 degrees.

4 is a schematic cross-sectional view showing another manufacturing jig used in the method for manufacturing a sputtering target. 4 shows the X-Y axis cross section of the manufacturing jig.

Next, as shown in Fig. 4(a), a tubular frame 6 is prepared. The frame 6 extends in the direction of the central axis 5c, and at least one of both ends thereof is closed. When the mandrel 5 is surrounded by the tubular frame 6 , a plurality of spaces 53 are formed between the mandrel 5 and the frame 6 . For example, when the outer peripheral surface 51 of the mandrel 5 is surrounded by the mold 6 , the pair of convex portions 52 abut the inner wall 6w of the mold 6 . Thereby, the space between the outer peripheral surface 51 and the frame 6 is defined by the some space part 53. As shown in FIG.

For example, in the example of Fig. 4(a), the space between the outer peripheral surface 51 and the frame 6 is formed by a pair of convex portions 52 around the central axis 5c. 53) is defined. A pair of space portions 53 are arranged around the central axis 5c.

Next, as shown in FIG.4(b), the powder 21 which is a raw material of the target main body 20 is filled in each of the some space part 53. As shown in FIG. Subsequently, a pressure is isotropically applied to the powder 21 from the outside of the mold 6 by a method such as Cold Isostatic Pressing (CIP) (see arrow).

Fig. 5 (a) is a schematic perspective view showing a molded body that is a precursor of the target body. Fig. 5(b) is a schematic perspective view showing a state when the molded body is sintered.

When pressure is isotropically applied to the powder 21 through the mold 6, a pair of molded bodies 22 by the powder 21 are formed as shown in FIG.

Next, as shown in FIG. 5(b), the support 70 which supports the molded object 22 is prepared. Subsequently, the molded body 22 is mounted on the support 70 so that the longitudinal direction of the molded body 22 is parallel to the support surface 71 of the support 70 .

Next, between the contact surface (inner wall) 22w of the molded body 22 in contact with the outer circumferential surface 51 of the mandrel 5 and the support pole 70, a support jig 72 composed of the same component as the molded body 22 . to intervene The support jig 72 is block-shaped, and at least 1 piece is prepared. Subsequently, the molded body 22 is heated while the contact surface 22w is supported by the support jig 72 . Thereby, the sintered compact by which the powder 21 was baked, ie, target member 20A, 20B, is formed. Here, since the support jig 72 is comprised from the same component as the molded object 22, a foreign material from the support jig 72 does not mix into the sintered compact.

It is a schematic diagram which shows the state which fills the bonding material between a target main body and a backing tube.

Next, in the state in which the backing tube 10 leaned, target member 20A, 20B is arrange|positioned around the backing tube 10. Then, the molten bonding material 30 is filled between the backing tube 10 and target member 20A, 20B from the lower side of the backing tube 10 (for example, 160 degreeC, In). In the filling of the bonding material 30 , filling using a pressure (gravity) difference, press-fitting, or the like is used. At this time, since the gap 201 is shielded by the shielding member 40 , the bonding material 30 hardly leaks into the gap 201 .

Then, the bonding material 30 solidifies between the backing tube 10 and target member 20A, 20B, and the backing tube 10 and target member 20A, 20B are joined by the bonding material 30. Then, the finishing process which finishes the surface roughness of target member 20A, 20B is performed as needed.

An example of the effect at the time of using the sputtering target 1 is demonstrated.

In the case of a cylindrical oxide target having a non-divided structure, when the molded body is fired, the molded body is placed under a high-temperature environment, so that the molded body may be deformed due to softening, shrinkage, or the like. For this reason, when producing a cylindrical oxide target of a non-divided structure, a method of firing the cylindrical molded body in an upright state may be employed.

However, when firing the molded body in a standing state, the length of the sintered body (target member) to be formed is limited by the height of the firing furnace. Therefore, in order to obtain a sintered compact having a length of 1 m or more, a new vertical sintering furnace must be newly introduced, resulting in a cost problem. Moreover, when the compact is fired in the standing state, the possibility that the sintered compact is twisted or broken increases. For this reason, the yield falls in the cylindrical oxide target of a non-divided structure.

On the other hand, in this embodiment, the molded object 22 is made into the shape of a semicircular tube. As a result, when the molded body 22 is fired, the molded body 22 can be placed horizontally, the molded body 22 is less likely to be deformed, and the molded body 22 is less likely to collapse. As a result, the yield of the oxide target is greatly improved. Moreover, by laying horizontally with the molded object 22, a horizontally long target member is obtained, and since the height restriction|limiting of a calcination furnace is not received, it becomes unnecessary to introduce|transduce a new calcination furnace. Thereby, cost reduction is implement|achieved. In particular, the method of this embodiment is effective when forming sputtering targets, such as IGZO (indium-gallium-zinc-oxide) which is an oxide semiconductor material.

Moreover, when a clearance gap is formed in a direction orthogonal to the central axis of a horizontally long sputtering target, the volume of the clearance gap exposed to plasma at the time of sputtering will inevitably become large. For this reason, there is a possibility that the component of the bonding material or the component of the backing tube is mixed into the film through the gap. Mixing of such impurities causes deterioration of the film quality or irregularities in the properties of the film.

On the other hand, in this embodiment, since the clearance gap 201 is formed in the longitudinal direction of the sputtering target 1, the volume of the clearance gap exposed to plasma reduces. In particular, by arranging the pair of semi-cylindrical target members 20A and 20B around the backing tube 10, the volume of the gap exposed to the plasma is greatly reduced. Thereby, it becomes difficult to mix impurities into the film, and a high-quality film can be formed. Moreover, it becomes difficult for the characteristic of a film to become non-uniform|heterogenous.

Further, since the gap 201 is shielded by the shielding member 40 from the side of the bonding material 30 , leakage of the bonding material 30 into the clearance 201 and plasma irradiation to the bonding material 30 are reliably suppressed. do.

(Modification 1)

7 is a schematic perspective view of a sputtering target according to Modification 1 of the present embodiment.

In the sputtering target 2, the target main body 20 becomes a row|column shape in the direction of the central axis 10c of the backing tube 10, and it is arranged in multiple numbers. Each of the plurality of target bodies 20 is disposed to be spaced apart from each other in the direction of the central axis 10c. The length in the direction of the central axis 10c of the sputtering target 2 which has the some target main body 20 is 2000 mm or more.

The clearance gap 202 of the target main body 20 adjacent in the direction of the central axis 10c can be made narrower than the clearance gap 201. As shown in FIG. Thereby, even if it overlaps the target main body 20 in the direction of the central axis 10c in multiple numbers, the volume of a clearance gap does not become excessive.

According to this structure, in addition to the above-mentioned effect, the length in the direction of the central axis 10c of a sputtering target can be lengthened simply.

(Modified example 2)

8 is a schematic cross-sectional view of a sputtering target according to a second modification of the present embodiment.

In the target body 20 , a recess 203 communicating with the gap 201 may be provided inside the target body 20 . The recessed part 203 is formed in the side of the backing tube 10. In the recessed part 203, the shielding member 40A (FIG.8(a)) or the shielding member 40B (FIG.8(b)) is accepted

With such a structure, the space between the shielding member 40A (or the shielding member 40B) and the backing tube 10 is ensured reliably. Thereby, the molten bonding material 30 is provided more uniformly between the backing tube 10 and the target body 20 without being loaded by the shielding member 40A (or the shielding member 40B). do.

It is a schematic diagram which shows the other state which fills the bonding material between a target main body and a backing tube.

For example, in a state where the backing tube 10 and the target body 20 are placed horizontally, the bonding material 30 is placed between the backing tube 10 and the target body 20 from the bottom. In the case of injection, the molten bonding material 30 is provided more evenly between the backing tube 10 and the target body 20 without being loaded by the shielding member 40A (or the shielding member 40B). will become

Example

<No target>

(Example)

As a raw material, In ₂ O ₃ powder having an average particle diameter of primary particles of 1.1 μm, ZnO powder having an average particle diameter of primary particles of 0.5 μm, and Ga ₂ O ₃ having an average particle diameter of primary particles of 1.3 μm are oxides Weighed so as to be 1:2:1 in molar ratio. These raw material powders were pulverized and mixed with a wet ball mill. A zirconia ball having a diameter of 5 mm was used as the grinding media. The pulverized and mixed slurry was dried and granulated with a spray dryer to obtain a granulated powder.

The granulated powder was filled into a polyurethane mold 6 having a metal core 5 provided therein, and the granulated powder was sealed, followed by CIP molding at a pressure of 98 MPa. Thereby, two semicircular tube-shaped molded bodies (to-be-fired bodies) 22 were obtained. At the same time, the support jig 72 was molded. The dimension of the support jig 72 is width 40mm x height 77mm.

The molded object 22 was left to stand in a degreasing furnace in the transverse direction, and it degreased at 600 degreeC. After the degreasing treatment is completed, the molded body 22 is left in the horizontal direction on a support 70 made of alumina, and the molded body 22 is supported by three support jigs 72 arranged in a row on the support 70 . did. As the number of samples of the molded object 22, by performing shaping|molding 10 times, the molded object 22 of total of 20 pieces (two by one shaping|molding) was produced.

Each of the molded bodies 22 was heat-processed for 10 hours at the maximum temperature of 1500 degreeC in a kiln, and the target members 20A, 20B of the semi-cylindrical shape with a length of 1050 mm were obtained. The average internal diameter deformation of 20 target members after baking was 1.1 mm.

(Comparative Example 1)

The granulated powder produced under the same conditions as in the example was filled between a round rod-shaped metal core bar having no projections 52 and a mold 6 . After sealing the granulated powder, CIP molding was performed at a pressure of 98 MPa to obtain a cylindrical molded body without gaps 201 . It degreased at 600 degreeC in the degreasing furnace with the obtained molded object (to-be-fired object) standing up. As the number of samples of the molded object, 10 moldings were performed to produce a total of 10 molded objects (one in one molding).

After the degreasing treatment was completed, the molded body was left standing on the support 70, and calcined at a maximum temperature of 1500° C. for 10 hours in a kiln. Thereby, a cylindrical target member with a length of 350 mm was obtained.

The distortion average of the inner diameter of ten target members was set to 2 mm, and became larger than an Example. As one of the factors, since the sliding of the edge surface that was in contact with the support 70 due to the shrinkage during firing was inhibited by the frictional resistance with the support 70, the difference in inner diameter with the upper edge surface increased. I think.

(Comparative Example 2)

The granulated powder produced under the same conditions as in Example 1 was subjected to CIP molding and degreasing under the same conditions as in Comparative Example 1 to obtain a cylindrical shaped body. The molded object after the degreasing process was left to stand sideways on the support base 70, the maximum temperature of 1500 degreeC in a kiln, and baking for 10 hours was performed, and the cylindrical target member with a length of 1050 mm was obtained. As the number of samples of the molded object, 10 moldings were performed to produce a total of 10 molded objects (one in one molding).

Of the 10 target members, a crack generate|occur|produced in 4 target members. The internal diameter torsion average of the remaining six target members without cracks was set to 10 mm, and became larger than the comparative example 1. As one of the factors, it is considered that the torsion increased due to its own weight at the time of shrinkage during firing when it was left in the lateral direction.

Table 1 puts together the number of objects of the molded object CIP-molded in Examples and Comparative Examples 1 and 2, the number of target members in which cracks do not occur, and distortion of the inner diameter.

<Sputtering target>

The semi-cylindrical target members 20A and 20B obtained in Examples were machined to have an inner diameter of 135 mm, an outer diameter of 147 mm, and a length of 1000 mm, to prepare a set of target members 20A and 20B. Moreover, the shielding member 40 of width 5mm which laminated|stacked the oxide layer 404 (IGZO layer) by plasma spraying on the metal sheet 403 made from Ti of thickness 0.2mm was produced.

One set of target members 20A, 20B was opposed so that it might become cylindrical, and the shielding member 40 was affixed to the clearance gap 201 from the inside. Then, the backing tube 10 was arrange|positioned inside cylindrical target member 20A, 20B (target main body 20). Moreover, the preprocessing which scrubs In was performed to the inner peripheral surface 102 of the backing tube 10, providing ultrasonic vibration with the iron on which the ultrasonic transmitter was mounted.

After alignment was performed so that the target body 20 and the backing tube 10 became concentric, the bonding material 30 of molten In was inject|poured between the target body 20 and the backing tube 10. Next, the bonding material 30 was cooled and solidified.

The width of the gap 201 of the obtained sputtering target 1 was 0.3 mm. As a result of observing the gap 201 with a microscope, leakage of the bonding material 30 was not observed.

As mentioned above, although embodiment of this invention was described, this invention is not limited only to embodiment mentioned above, It goes without saying that various changes can be added. Each embodiment is not limited to an independent form, and may be complex|complex as much as technically possible.

1, 2: Sputtering target
5: mandrel
5c: central axis
51: outer peripheral surface
52: convex part
53: space part
6: Brother
6w: inner wall
10: backing tube
10c: central axis
101: outer peripheral surface
102: If you give me
20: target body
20A, 20B: target member
201, 202: gap
21: powder
22: molded body
22w: contact surface
30: bonding material
40, 40A, 40B: shield member
401: adhesive sheet
402: resin sheet
403: metal sheet
404: oxide layer
70: support
71: support surface
72: support jig

Claims (10)

a backing tube on the tube;
It includes a plurality of target members arranged in parallel along the outer peripheral surface of the backing tube and having an arc-shaped cross section, wherein each of the plurality of target members is disposed so as to be spaced apart around the central axis of the backing tube, and arranged around the central axis a target body in which a gap formed between the target members extends in the central axis direction of the backing tube, and a concave portion communicating with the gap is provided inside;
a bonding material provided between the backing tube and the target body to join each of the backing tube and the plurality of target members;
It is accommodated in a recess between the bonding material and the target body, both sides are respectively joined to the plurality of target members, and the inner side is joined with the bonding material so as to shield the gap from the side of the bonding material, and the gap is formed from the recess. A sputtering target comprising a shielding member having an outer side disposed in the concave portion so as not to protrude into the gap and to be exposed to the gap. The method of claim 1,
The target body surrounds the backing tube by a set of target members,
When the set of target members is cut in a direction orthogonal to the central axis direction of the backing tube, the central axis of the backing tube is located between the pair of gaps formed between the set of target members. sputtering target. 3. The method according to claim 1 or 2,
The sputtering target in which the said target main body becomes a column shape in the said central axis direction of the said backing tube, and is provided in plural. 3. The method according to claim 1 or 2,
The sputtering target in which each of the said some target member is comprised by the sintered compact of an oxide. 4. The method of claim 3,
The sputtering target in which each of the said some target member is comprised by the sintered compact of an oxide. 5. The method of claim 4,
The sintered body is a sputtering target having In, Ga, and Zn. 6. The method of claim 5,
The sintered body is a sputtering target having In, Ga, and Zn. A method of manufacturing a sputtering target having a tube-shaped backing tube, a target body surrounding the backing tube, and a bonding material inserted between the backing tube and the target body to join the backing tube and the target body, the method comprising:
The outer peripheral surface around the central axis is composed of the same curvature as that of the outer peripheral surface of the backing tube, is a cylindrical mandrel having a convex portion protruding outward from the outer peripheral surface, and when the outer peripheral surface is surrounded by a tubular frame, the preparing the mandrel in which a space formed by an outer circumferential surface and the frame is defined by a plurality of space portions around the central axis by the convex portion;
Forming the plurality of spaces by the mandrel and the frame,
Filling each of the plurality of space parts with powder,
Forming a molded body by the powder by isotropically applying pressure to the powder through the mold,
The manufacturing method of the sputtering target which forms the sintered compact which the said powder sintered by heating the said molded object. 9. The method of claim 8,
The method of manufacturing a sputtering target, wherein the plurality of space portions are a pair of space portions arranged around the central axis. 10. The method according to claim 8 or 9,
Mounting the molded body on the support so that the longitudinal direction of the molded body filled and formed in the plurality of spaces is parallel to the support surface of the support for supporting the molded body,
A support jig composed of the same component as the molded body is interposed between the support and the contact surface in contact with the outer circumferential surface of the mandrel,
The manufacturing method of the sputtering target which bakes the said molded object, supporting the said contact surface with the said support jig.

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