WO2020250586A1 - Sputtering target and sputtering target manufacturing method - Google Patents
Sputtering target and sputtering target manufacturing method Download PDFInfo
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- WO2020250586A1 WO2020250586A1 PCT/JP2020/017913 JP2020017913W WO2020250586A1 WO 2020250586 A1 WO2020250586 A1 WO 2020250586A1 JP 2020017913 W JP2020017913 W JP 2020017913W WO 2020250586 A1 WO2020250586 A1 WO 2020250586A1
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- target
- backing tube
- sputtering target
- central axis
- peripheral surface
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/604—Pressing at temperatures other than sintering temperatures
Definitions
- the present invention relates to a sputtering target and a method for manufacturing the sputtering target.
- a sputtering target when a sputtering target is composed of a plurality of target members, adjacent target members may come into contact with each other due to thermal expansion of the target members, and the target members may crack. In order to prevent cracking due to this contact, a gap may be provided between adjacent target members (see, for example, Patent Document 1).
- an object of the present invention is to provide a sputtering target in which particles and abnormal discharges are suppressed even if it is long and cylindrical, and a method for manufacturing the same.
- the sputtering target includes a tubular backing tube, a target body, a bonding material, and a shielding member.
- the target body includes a plurality of target members arranged side by side along the outer peripheral surface of the backing tube and having an arcuate cross section. Each of the plurality of target members is arranged so as to be separated from each other around the central axis of the backing tube.
- the gap formed between the target members arranged around the central axis extends in the central axis direction of the backing tube.
- the joining material is provided between the backing tube and the target body, and joins the backing tube and each of the plurality of target members.
- the shielding member is provided between the joining material and the target body, and shields the gap from the side of the joining material.
- the target body includes a plurality of target members having an arcuate cross section, and each of the plurality of target members is arranged so as to be separated from each other around the central axis of the backing tube.
- the gap formed between the surrounding target members extends in the direction of the central axis of the backing tube.
- the target body surrounds the backing tube with a set of target members.
- the central axis of the backing tube is located between the pair of gaps formed between the set of target members. You may.
- the volume of the gap is increased even if the sputtering target is long and cylindrical. Is suppressed, and particles and abnormal discharge are suppressed.
- a plurality of target bodies may be arranged side by side in a row in the central axis direction of the backing tube.
- the sputtering target is formed to be longer.
- each of the plurality of target members may be composed of an oxide sintered body.
- the sintered body may have In, Ga, and Zn.
- the sintered body has In, Ga, and Zn, a stable oxide semiconductor film is formed.
- the outer peripheral surface orbiting the central axis is configured to have the same curvature as the outer peripheral surface of the backing tube, and protrudes outward from the outer peripheral surface.
- a columnar core rod having a convex portion and when the outer peripheral surface is surrounded by a tubular mold, the space formed by the outer peripheral surface and the mold is formed around the central axis by the convex portion.
- the core rod defined in a plurality of spaces is prepared.
- the plurality of space portions are formed by the core rod and the mold.
- Powder is filled in each of the plurality of spaces.
- isotropic pressure to the powder through the mold, a molded product made of the powder is formed.
- a sintered body in which the powder is sintered is formed.
- a pair of space portions that line up the space around the central axis may be defined by the convex portion.
- the support base is formed so that the longitudinal direction of the molded body formed by filling the pair of spaces is parallel to the support surface of the support base that supports the molded body.
- the above-mentioned molded product is placed on the A support jig composed of the same components as the molded body is interposed between the contact surface where the molded body is in contact with the outer peripheral surface of the core rod and the support base.
- the molded product may be fired while supporting the contact surface with the support jig.
- the molded body is fired while the molded body is supported by a support jig composed of the same components as the molded body, so that the volume of the gap increases even if it is a cylindrical type.
- Sputtering targets that are suppressed, particles, and abnormal discharge are suppressed are reliably manufactured.
- a sputtering target in which particles and abnormal discharge are suppressed even if it is long and cylindrical, and a method for manufacturing the same.
- FIG. (A) is a schematic perspective view of the sputtering target according to the present embodiment.
- FIG. (B) is a schematic cross-sectional view of the sputtering target according to the present embodiment. It is a schematic cross-sectional view which shows the cross-sectional structure of a shielding member. It is a schematic perspective view which shows the manufacturing jig used in the manufacturing method of a sputtering target. It is a schematic cross-sectional view which shows another manufacturing jig used in the manufacturing method of a sputtering target.
- FIG. (A) is a schematic perspective view showing a molded product that is a precursor of the target body.
- FIG. (B) is a schematic perspective view showing a state when the molded product is sintered.
- FIG. 1A is a schematic perspective view of the sputtering target according to the present embodiment.
- FIG. 1B is a schematic cross-sectional view of the sputtering target according to the present embodiment.
- FIG. 1 (b) shows a cross section in the XY axis plane of FIG. 1 (a).
- the sputtering target 1 shown in FIGS. 1A and 1B is a cylindrical target assembly used for sputtering film formation.
- the sputtering target 1 includes a backing tube 10, a target main body 20, a bonding material 30, and a shielding member 40.
- the backing tube 10 is a tubular body, and the inside thereof is hollow.
- the backing tube 10 extends in a uniaxial direction (for example, in the direction of the central axis 10c).
- the direction of the central axis 10c is the longitudinal direction of the backing tube 10.
- the central axis 10c is also the central axis of the sputtering target 1.
- the backing tube 10 has an outer peripheral surface 101 that orbits around the central axis 10c, and an inner peripheral surface 102 that is located on the opposite side of the outer peripheral surface 101 and orbits around the central axis 10c.
- the shape thereof is, for example, an annular shape.
- the material of the backing tube 10 has a material having excellent thermal conductivity, and is, for example, titanium (Ti), copper (Cu), or the like.
- a flow path through which the refrigerant flows may be appropriately formed inside the backing tube 10.
- the target body 20 surrounds the outer peripheral surface 101 of the backing tube 10.
- the target body 20 is arranged concentrically with respect to the backing tube 10.
- the target body 20 has a plurality of target members.
- the target body 20 has a set of target members 20A and 20B.
- Each of the target members 20A and 20B surrounds the backing tube 10.
- the target members 20A and 20B are arranged side by side along the outer peripheral surface 101 of the backing tube 10.
- the shape thereof is, for example, an arc shape.
- the cross-sectional shapes of the target members 20A and 20B in the XY-axis plane have the same shape.
- the lengths of the target members 20A and 20B in the Z-axis direction are the same.
- the target members 20A and 20B are arranged so as to be separated from each other around the central axis 10c of the backing tube 10 without contacting each other.
- the target members 20A and 20B are arranged side by side around the central axis 10c of the backing tube 10.
- the target body 20 has a divided structure divided in a direction orthogonal to the central axis 10c.
- a gap (divided portion) 201 is formed between the target member 20A and the target member 20B.
- a pair of gaps 201 are formed between the target members 20A and 20B, respectively.
- Each of the pair of gaps 201 is parallel to each other and extends in the direction of the central axis 10c of the backing tube 10.
- the central axis 10c of the backing tube 10 is located between the pair of gaps 201.
- the pair of gaps 201 and the central axis 10c are arranged in series.
- the width of the gap 201 is not particularly limited, and is set so as not to come into contact with each other due to thermal expansion of the target members 20A and 20B, for example.
- the target members 20A and 20B are made of the same material, for example, made of an oxide sintered body.
- the sintered body has In and Zn.
- the sintered body is made of In—Ga—Zn—O (IGZO).
- the sintered body may be an In—Ti—Zn—Sn—O (ITZTO) sintered body, an In—Ti—Zn—Sn—O (IGTO) sintered body, or the like.
- the joining material 30 is interposed between the backing tube 10 and the target body 20.
- the joining material 30 is in close contact with the backing tube 10 and the target body 20.
- the joining material 30 joins the backing tube 10 and each of the plurality of target members 20A and 20B.
- the bonding material 30 includes, for example, indium (In), tin (Sn), a solder material, and the like.
- the shielding member 40 is provided between the joining material 30 and the target body 20.
- the shielding member 40 is located between the gap 201 and the joining member 30.
- the shielding member 40 shields the gap 201 from the side of the joining member 30.
- leakage of the bonding material 30 into the gap 201 is suppressed, and the bonding material 30 is less likely to enter the gap 201.
- the bonding member 30 is shielded from the plasma by the shielding member 40.
- the component of the bonding material 30 for example, In
- the component of the bonding material 30 is less likely to be mixed with the component of the target body 20.
- 2 (a) and 2 (b) are schematic cross-sectional views showing a cross-sectional structure of a shielding member.
- the shielding member 40 may be the shielding member 40A shown in FIG. 2A or the shielding member 40B shown in FIG. 2B.
- the shielding member 40A shown in FIG. 2A has an adhesive sheet 401 having adhesiveness and a resin sheet 402 having plasma resistance.
- the resin sheet 402 is provided between the target members 20A and 20B and the adhesive sheet 401.
- the resin sheet 402 is a shielding base material for the shielding member 40A.
- the adhesive sheet 401 is a sticking material for the shielding member 40A.
- the resin sheet 402 straddles the gap 201, and a part of the resin sheet 402 is exposed in the gap 201.
- the resin sheet 402 is attached to each of the target members 20A and 20B by the adhesive sheet 401 from the side of the bonding material 30.
- Each material of the pressure-sensitive adhesive sheet 401 and the resin sheet 402 includes, for example, polyimide, fluororesin, silicone resin, and the like.
- the shielding member 40B shown in FIG. 2B has an adhesive sheet 401, a metal sheet 403, and an oxide layer 404.
- the shielding member 40B has a laminated structure in which the adhesive sheet 401 / metal sheet 403 / oxide layer 404 are arranged in this order from the bonding material 30 toward the target members 20A and 20B.
- the metal sheet 403 joins the pressure-sensitive adhesive sheet 401 and the oxide layer 404 and functions as an intermediate layer for relieving the stress of each, and the oxide layer 404 functions as a shielding base material.
- the oxide layer 404 straddles the gap 201, and a part of the oxide layer 404 is exposed in the gap 201. Further, the oxide layer 404 is attached to the target members 20A and 20B from the side of the bonding material 30 by the adhesive sheet 401 via the metal sheet 403.
- the metal sheet 403 contains, for example, titanium (Ti).
- the oxide layer 404 is made of the same material as the target members 20A and 20B. As a result, even if the shielding member 40B is exposed to plasma during sputtering, components other than the components of the target body 20 are less likely to be mixed in the coating film.
- the manufacturing method of the sputtering target 1 will be described.
- FIG. 3 is a schematic perspective view showing a manufacturing jig used in a method for manufacturing a sputtering target.
- the columnar core rod 5 shown in FIG. 3 is prepared.
- the core rod 5 extends in the direction of the central shaft 5c, and the direction of the central shaft 5c is the longitudinal direction of the core rod 5.
- the outer peripheral surface 51 orbits the central axis 5c, and the outer peripheral surface 51 has the same curvature as the outer peripheral surface 101 of the backing tube 10.
- the core rod 5 is provided with a convex portion 52 protruding outward from the outer peripheral surface 51 on the outer peripheral surface 51.
- a plurality of convex portions 52 are provided on the outer peripheral surface 51.
- a pair of convex portions 52 are provided around the central axis 5c at intervals of 180 degrees.
- 4 (a) and 4 (b) are schematic cross-sectional views showing another manufacturing jig used in the method for manufacturing a sputtering target.
- 4 (a) and 4 (b) show the XY-axis cross sections of the manufacturing jig.
- a tubular mold 6 is prepared.
- the mold 6 extends in the direction of the central axis 5c, and at least one of both ends thereof is closed.
- a plurality of space portions 53 are formed between the core rod 5 and the mold 6.
- the pair of convex portions 52 abuts on the inner wall 6w of the mold 6.
- the space between the outer peripheral surface 51 and the mold 6 is defined by a plurality of space portions 53.
- the space between the outer peripheral surface 51 and the mold 6 is defined by the pair of convex portions 52 in the pair of space portions 53 around the central axis 5c.
- the pair of space portions 53 are arranged around the central axis 5c.
- each of the plurality of space portions 53 is filled with the powder 21 which is the raw material of the target main body 20. Subsequently, the powder 21 is isotropically pressed from the outside of the mold 6 by a method such as cold isostatic pressing (CIP) (see the arrow).
- CIP cold isostatic pressing
- FIG. 5A is a schematic perspective view showing a molded product that is a precursor of the target body.
- FIG. 5B is a schematic perspective view showing a state when the molded product is sintered.
- a support base 70 for supporting the molded body 22 is prepared. Subsequently, the molded body 22 is placed on the support base 70 so that the longitudinal direction of the molded body 22 is parallel to the support surface 71 of the support base 70.
- a support jig 72 composed of the same components as the molded body 22 is interposed between the contact surface (inner wall) 22w of the molded body 22 that is in contact with the outer peripheral surface 51 of the core rod 5 and the support base 70.
- the support jig 72 is in the form of a block, and at least one is prepared.
- the molded body 22 is heated while the contact surface 22w is supported by the support jig 72.
- sintered bodies in which the powder 21 is fired that is, target members 20A and 20B are formed.
- the support jig 72 is composed of the same components as the molded body 22, foreign matter does not enter the sintered body from the support jig 72.
- FIG. 6 is a schematic view showing how the bonding material is filled between the target body and the backing tube.
- the target members 20A and 20B are arranged around the backing tube 10 with the backing tube 10 leaning against it.
- the molten bonding material 30 is filled between the backing tube 10 and the target members 20A and 20B from below the backing tube 10 (for example, 160 ° C., In).
- filling, press-fitting, etc. using the pressure (gravity) difference are used.
- the joining material 30 is less likely to leak into the gap 201.
- the joining material 30 is solidified between the backing tube 10 and the target members 20A and 20B, and the backing tube 10 and the target members 20A and 20B are joined by the joining material 30. After that, if necessary, a finishing process for adjusting the surface roughness of the target members 20A and 20B is performed.
- a method of firing in an upright cylindrical molded body may be adopted.
- the length of the sintered body (target member) formed is limited by the height of the firing furnace. Therefore, in order to obtain a sintered body having a length of 1 m or more, a new vertically long firing furnace must be newly introduced, which causes a cost problem. Further, if the molded product is fired in an upright state, the sintered body is more likely to be distorted or collapsed. For this reason, the yield is lowered in the cylindrical oxide target having an undivided structure.
- the molded body 22 has a semi-cylindrical shape.
- the molded body 22 when the molded body 22 is fired, the molded body 22 can be placed horizontally, the molded body 22 is less likely to be distorted, and the molded body 22 is less likely to collapse.
- the yield of the oxide target is greatly improved.
- the method of the present embodiment is effective when forming a sputtering target of IGZO (indium-gallium-zinc-oxide) or the like, which is an oxide semiconductor material.
- IGZO indium-gallium-zinc-oxide
- the component of the bonding material or the component of the backing tube may be mixed into the coating film through the gap.
- the inclusion of such impurities may lead to deterioration of the quality of the coating film in the future, or the characteristics of the coating film may vary.
- the gap 201 is formed in the longitudinal direction of the sputtering target 1, the volume of the gap exposed to plasma is reduced.
- the volume of the gap exposed to plasma is greatly reduced.
- impurities are less likely to be mixed into the film, and a high-quality film can be formed.
- the characteristics of the coating film are less likely to vary.
- the gap 201 is shielded from the side of the bonding material 30 by the shielding member 40, leakage of the bonding material 30 into the gap 201 and plasma irradiation of the bonding material 30 are reliably suppressed.
- FIG. 7 is a schematic perspective view of the sputtering target according to the first modification of the present embodiment.
- a plurality of target bodies 20 are arranged side by side in a row in the direction of the central axis 10c of the backing tube 10.
- Each of the plurality of target bodies 20 is arranged apart from each other in the direction of the central axis 10c.
- the length of the sputtering target 2 having the plurality of target bodies 20 in the direction of the central axis 10c is 2000 mm or more.
- the gap 202 of the target main body 20 adjacent to each other in the direction of the central axis 10c may be narrower than the gap 201. As a result, even if a plurality of target bodies 20 are stacked in the direction of the central axis 10c, the volume of the gap does not become excessive.
- the length of the sputtering target in the direction of the central axis 10c can be easily increased.
- 8 (a) and 8 (b) are schematic cross-sectional views of the sputtering target according to the second modification of the present embodiment.
- a recess 203 communicating with the gap 201 may be provided inside the target body 20.
- the recess 203 is formed on the side of the backing tube 10.
- the shielding member 40A (FIG. 8A) or the shielding member 40B (FIG. 8B) is housed in the recess 203.
- the space between the shielding member 40A (or the shielding member 40B) and the backing tube 10 is surely secured.
- the molten bonding material 30 is evenly distributed between the backing tube 10 and the target body 20 without being loaded by the shielding member 40A (or the shielding member 40B).
- FIG. 9 is a schematic view showing another state in which the bonding material is filled between the target body and the backing tube.
- the bonding material 30 is injected from below between the backing tube 10 and the target body 20 with the backing tube 10 and the target body 20 placed horizontally, the molten bonding material 30 is formed.
- the backing tube 10 and the target main body 20 are evenly distributed without being loaded by the shielding member 40A (or the shielding member 40B).
- Ga 2 O 3 was weighed so that the molar ratio of oxides was 1: 2: 1.
- These raw material powders were pulverized and mixed with a wet ball mill. A zirconia ball having a diameter of 5 mm was used as the crushing medium. The pulverized and mixed slurry was dried and granulated with a spray dryer to obtain granulated powder.
- the polyurethane mold 6 in which the metal core rod 5 was installed was filled with the granulated powder, the granulated powder was sealed, and then CIP molding was performed at a pressure of 98 MPa. As a result, two semi-cylindrical molded bodies (molded bodies) 22 were obtained. At the same time, the support jig 72 was molded. The dimensions of the support jig 72 are width 40 mm ⁇ height 77 mm.
- the molded body 22 was left to stand sideways in a degreasing furnace and degreased at 600 ° C. After the degreasing treatment was completed, the molded body 22 was placed sideways on the support base 70 made of alumina, and the molded body 22 was supported by three support jigs 72 arranged in a row on the support base 70. As for the number of samples of the molded body 22, a total of 20 molded bodies (2 in one molding) were produced by performing molding 10 times.
- Each of the molded bodies 22 was heat-treated at a maximum temperature of 1500 ° C. for 10 hours in a firing furnace to obtain semi-cylindrical target members 20A and 20B having a length of 1050 mm.
- the average strain of the inner diameters of the 20 target members after firing was 1.1 mm.
- the granulated powder produced under the same conditions as in the examples was filled between the round bar-shaped metal core rod and the mold 6 in which the convex portion 52 was not provided.
- CIP molding was performed at a pressure of 98 MPa to obtain a cylindrical molded body having no gap 201.
- the obtained molded body (molded body) was degreased at 600 ° C. in a degreasing furnace in an upright state.
- a total of 10 molded bodies (1 in one molding) were produced by performing the molding 10 times.
- the molded product after the degreasing treatment was left standing on a support 70 and fired at a maximum temperature of 1500 ° C. for 10 hours in a firing furnace. As a result, a cylindrical target member having a length of 350 mm was obtained.
- the average strain of the inner diameters of the 10 target members was 2 mm, which was larger than that of the examples. It is considered that one of the reasons for this is that the shrinkage during firing was hindered by the frictional resistance of the end face that was in contact with the support 70, and the difference in inner diameter from the upper end face became large. ..
- the granulated powder produced under the same conditions as in Example 1 was CIP molded and degreased under the same conditions as in Comparative Example 1 to obtain a cylindrical molded body.
- the molded product after the degreasing treatment was allowed to stand sideways on the support 70 and fired at a maximum temperature of 1500 ° C. for 10 hours in a firing furnace to obtain a cylindrical target member having a length of 1050 mm.
- a total of 10 molded bodies (1 in one molding) were produced by performing the molding 10 times.
- the average strain of the inner diameters of the remaining six target members without cracks was 10 mm, which was larger than that of Comparative Example 1. As one of the factors, it is considered that in the case of standing sideways, the strain becomes large due to its own weight when it shrinks during firing.
- Table 1 summarizes the number of CIP-molded compacts in Examples 1 and 2, the number of target members that did not crack, and the distortion of the inner diameter.
- the semi-cylindrical target members 20A and 20B obtained in the examples were machined so as to have an inner diameter of 135 mm, an outer diameter of 147 mm and a length of 1000 mm, and a set of target members 20A and 20B was prepared. Further, a shielding member 40 having a width of 5 mm was produced by laminating an oxide layer 404 (IGZO layer) on a metal sheet 403 made of Ti having a thickness of 0.2 mm by plasma spraying.
- IGZO layer oxide layer
- a set of target members 20A and 20B were opposed to each other so as to form a cylinder, and a shielding member 40 was attached to the gap 201 from the inside. Subsequently, the backing tube 10 was arranged inside the cylindrical target members 20A and 20B (target body 20). The inner peripheral surface 102 of the backing tube 10 was pretreated by rubbing In while applying ultrasonic vibration with a trowel equipped with an ultrasonic transmitter.
- the molten In bonding material 30 was injected between the target body 20 and the backing tube 10. After that, the bonding material 30 was cooled and solidified.
- the width of the gap 201 of the obtained sputtering target 1 was 0.3 mm. As a result of observing the gap 201 with a microscope, no leakage of the bonding material 30 was observed.
Abstract
Description
上記ターゲット本体は、上記バッキングチューブの外周面に沿うように並設され円弧状の断面を有する複数のターゲット部材を含む。上記複数のターゲット部材のそれぞれは、上記バッキングチューブの中心軸周りに離間するように配置される。上記中心軸周りに並ぶターゲット部材間に形成される間隙は、上記バッキングチューブの中心軸方向に延在する。
上記接合材は、上記バッキングチューブと上記ターゲット本体との間に設けられ、上記バッキングチューブと上記複数のターゲット部材のそれぞれとを接合する。
上記遮蔽部材は、上記接合材と上記ターゲット本体との間に設けられ、上記間隙を上記接合材の側から遮蔽する。 In order to achieve the above object, the sputtering target according to one embodiment of the present invention includes a tubular backing tube, a target body, a bonding material, and a shielding member.
The target body includes a plurality of target members arranged side by side along the outer peripheral surface of the backing tube and having an arcuate cross section. Each of the plurality of target members is arranged so as to be separated from each other around the central axis of the backing tube. The gap formed between the target members arranged around the central axis extends in the central axis direction of the backing tube.
The joining material is provided between the backing tube and the target body, and joins the backing tube and each of the plurality of target members.
The shielding member is provided between the joining material and the target body, and shields the gap from the side of the joining material.
上記芯棒と上記型とによって上記複数の空間部が形成される。
上記複数の空間部のそれぞれに粉体が充填される。
上記粉体に上記型を介して等方的に圧力をかけることによって上記粉体による成形体が形成される。
上記成形体を加熱することにより、上記粉体が焼結した焼結体が形成される。 In order to achieve the above object, in the method for manufacturing a sputtering target according to one embodiment of the present invention, the outer peripheral surface orbiting the central axis is configured to have the same curvature as the outer peripheral surface of the backing tube, and protrudes outward from the outer peripheral surface. A columnar core rod having a convex portion, and when the outer peripheral surface is surrounded by a tubular mold, the space formed by the outer peripheral surface and the mold is formed around the central axis by the convex portion. The core rod defined in a plurality of spaces is prepared.
The plurality of space portions are formed by the core rod and the mold.
Powder is filled in each of the plurality of spaces.
By applying isotropic pressure to the powder through the mold, a molded product made of the powder is formed.
By heating the molded product, a sintered body in which the powder is sintered is formed.
上記成形体が上記芯棒の上記外周面に当接した当接面と上記支持台との間に上記成形体と同じ成分で構成された支持冶具を介在させ、
上記支持冶具によって上記当接面を支持しながら上記成形体が焼成されてもよい。 In the method for manufacturing a sputtering target, the support base is formed so that the longitudinal direction of the molded body formed by filling the pair of spaces is parallel to the support surface of the support base that supports the molded body. The above-mentioned molded product is placed on the
A support jig composed of the same components as the molded body is interposed between the contact surface where the molded body is in contact with the outer peripheral surface of the core rod and the support base.
The molded product may be fired while supporting the contact surface with the support jig.
5…芯棒
5c…中心軸
51…外周面
52…凸部
53…空間部
6…型
6w…内壁
10…バッキングチューブ
10c…中心軸
101…外周面
102…内周面
20…ターゲット本体
20A、20B…ターゲット部材
201、202…間隙
21…粉体
22…成形体
22w…当接面
30…接合材
40、40A、40B…遮蔽部材
401…粘着シート
402…樹脂シート
403…金属シート
404…酸化物層
70…支持台
71…支持面
72…支持冶具 1, 2 ... Sputtering
Claims (8)
- 筒状のバッキングチューブと、
前記バッキングチューブの外周面に沿うように並設され円弧状の断面を有する複数のターゲット部材を含み、前記複数のターゲット部材のそれぞれが前記バッキングチューブの中心軸周りに離間するように配置され、前記中心軸周りに並ぶターゲット部材間に形成される間隙が前記バッキングチューブの中心軸方向に延在するターゲット本体と、
前記バッキングチューブと前記ターゲット本体との間に設けられ、前記バッキングチューブと前記複数のターゲット部材のそれぞれとを接合する接合材と、
前記接合材と前記ターゲット本体との間に設けられ、前記間隙を前記接合材の側から遮蔽する遮蔽部材と
を具備するスパッタリングターゲット。 With a tubular backing tube
A plurality of target members arranged side by side along the outer peripheral surface of the backing tube and having an arcuate cross section are included, and each of the plurality of target members is arranged so as to be separated from each other around the central axis of the backing tube. A target body in which a gap formed between target members arranged around the central axis extends in the central axis direction of the backing tube,
A joining material provided between the backing tube and the target body and joining the backing tube and each of the plurality of target members.
A sputtering target provided between the bonding material and the target main body and provided with a shielding member that shields the gap from the side of the bonding material. - 請求項1に記載のスパッタリングターゲットにおいて、
前記ターゲット本体は、一組のターゲット部材によって前記バッキングチューブを囲み、
前記一組のターゲット部材を前記バッキングチューブの前記中心軸方向と直交する方向に切断した場合、前記一組のターゲット部材間に形成される一対の前記間隙間に前記バッキングチューブの中心軸が位置する
スパッタリングターゲット。 In the sputtering target according to claim 1,
The target body surrounds the backing tube with a set of target members.
When the set of target members is cut in a direction orthogonal to the central axis direction of the backing tube, the central axis of the backing tube is located between the pair of gaps formed between the set of target members. Sputtering target. - 請求項1または2に記載のスパッタリングターゲットにおいて、
前記ターゲット本体は、前記バッキングチューブの前記中心軸方向に列状となって複数並設されている
スパッタリングターゲット。 In the sputtering target according to claim 1 or 2.
A plurality of target main bodies are arranged side by side in a row in the central axis direction of the backing tube. - 請求項1~3のいずれか1つに記載のスパッタリングターゲットにおいて、
前記複数のターゲット部材のそれぞれは、酸化物の焼結体によって構成されている
スパッタリングターゲット。 In the sputtering target according to any one of claims 1 to 3.
Each of the plurality of target members is a sputtering target composed of an oxide sintered body. - 請求項4に記載のスパッタリングターゲットにおいて、
前記焼結体は、In、Ga、及びZnを有する
スパッタリングターゲット。 In the sputtering target according to claim 4,
The sintered body is a sputtering target having In, Ga, and Zn. - 筒状のバッキングチューブと、前記バッキングチューブを囲むターゲット本体と、前記バッキングチューブと前記ターゲット本体との間に介設され、前記バッキングチューブと前記ターゲット本体とを接合する接合材とを有するスパッタリングターゲットの製造方法であって、
中心軸を周回する外周面が前記バッキングチューブの外周面と同じ曲率で構成され、前記外周面から外側に突出する凸部を有する円柱状の芯棒であって、筒状の型によって前記外周面が囲まれたときに、前記外周面と前記型とによって形成される空間が前記凸部によって前記中心軸の周りに複数の空間部に画定される前記芯棒を準備し、
前記芯棒と前記型とによって前記複数の空間部を形成し、
前記複数の空間部のそれぞれに粉体を充填し、
前記粉体に前記型を介して等方的に圧力をかけることによって前記粉体による成形体を形成し、
前記成形体を加熱することにより、前記粉体が焼結した焼結体を形成する
スパッタリングターゲットの製造方法。 A sputtering target having a tubular backing tube, a target body surrounding the backing tube, and a bonding material interposed between the backing tube and the target body and joining the backing tube and the target body. It ’s a manufacturing method,
A columnar core rod having an outer peripheral surface orbiting the central axis having the same curvature as the outer peripheral surface of the backing tube and having a convex portion protruding outward from the outer peripheral surface, and the outer peripheral surface is formed by a tubular mold. The core rod is prepared so that the space formed by the outer peripheral surface and the mold is defined by the convex portion in a plurality of space portions around the central axis when the outer peripheral surface and the mold are surrounded.
The plurality of space portions are formed by the core rod and the mold.
Each of the plurality of spaces is filled with powder, and
By applying isotropic pressure to the powder through the mold, a molded product made of the powder is formed.
A method for producing a sputtering target, which forms a sintered body in which the powder is sintered by heating the molded body. - 請求項6に記載のスパッタリングターゲットの製造方法において、
前記空間を前記凸部によって前記中心軸の周りに並ぶ一対の空間部に画定する
スパッタリングターゲットの製造方法。 In the method for manufacturing a sputtering target according to claim 6.
A method for manufacturing a sputtering target, in which the space is defined by the convex portion in a pair of space portions arranged around the central axis. - 請求項6または7に記載のスパッタリングターゲットの製造方法において、
前記一対の空間部に充填されて形成された前記成形体の長手方向が前記成形体を支持する支持台の支持面に対して平行になるように前記支持台に前記成形体を載置し、
前記成形体が前記芯棒の前記外周面に当接した当接面と前記支持台との間に前記成形体と同じ成分で構成された支持冶具を介在させ、
前記支持冶具によって前記当接面を支持しながら前記成形体を焼成する
スパッタリングターゲットの製造方法。 In the method for manufacturing a sputtering target according to claim 6 or 7.
The molded body is placed on the support so that the longitudinal direction of the molded body formed by filling the pair of spaces is parallel to the support surface of the support that supports the molded body.
A support jig composed of the same components as the molded body is interposed between the contact surface where the molded body is in contact with the outer peripheral surface of the core rod and the support base.
A method for manufacturing a sputtering target in which a molded product is fired while supporting the contact surface with the support jig.
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EP2384374B1 (en) * | 2009-01-30 | 2014-03-26 | Praxair S.T. Technology, Inc. | Tubular target |
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JP2015168832A (en) | 2014-03-05 | 2015-09-28 | 東ソー株式会社 | Cylindrical sputtering target and method for manufacturing the same |
JP5887625B1 (en) * | 2015-03-27 | 2016-03-16 | Jx金属株式会社 | Cylindrical sputtering target, cylindrical sintered body, cylindrical molded body, and manufacturing method thereof |
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JPH024965A (en) * | 1988-06-09 | 1990-01-09 | Hitachi Ltd | Sputtering target and magnetron sputtering device using the same |
US20040206620A1 (en) * | 2003-04-08 | 2004-10-21 | Hong Wang | Segmented sputtering target and method/apparatus for using same |
JP2006083408A (en) * | 2004-09-14 | 2006-03-30 | Shin Meiwa Ind Co Ltd | Vacuum film-forming apparatus |
JP2015004116A (en) * | 2013-06-24 | 2015-01-08 | 株式会社アルバック | Target assembly and manufacturing method of the same |
JP2015120975A (en) * | 2013-11-25 | 2015-07-02 | 株式会社フルヤ金属 | Production method of sputtering target, and sputtering target |
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