KR102288720B1 - Cylindrical ceramic sputtering target and manufacturing device and manufacturing method therefor - Google Patents

Abstract

The present invention is a cylindrical ceramic sputtering target comprising a cylindrical base material, a cylindrical ceramic target material, and solder for joining the cylindrical base material and the cylindrical ceramic target material, wherein the cylindrical ceramic target material has an outer surface of the cylindrical ceramic target material. A dial gauge is placed at a position 7 mm inside from both ends, and the cylindrical ceramic sputtering target is rotated once at positions 15 mm outside from both ends of the cylindrical ceramic target material on the outer peripheral surface of the cylindrical base material as fulcrums. A cylindrical ceramic sputtering target in which the difference between the maximum value and the minimum value of the dial gauge scale value is 1.0 mm or less at any measurement location when the scale value of the dial gauge is measured, and a manufacturing apparatus and manufacturing method thereof. The cylindrical ceramic sputtering target of the present invention can form a homogeneous thin film to the end of life by sputtering. The manufacturing apparatus and manufacturing method of the cylindrical ceramic sputtering target of this invention can manufacture the said cylindrical ceramic sputtering target suitably.

Description

Cylindrical ceramics sputtering target, its manufacturing apparatus, and manufacturing method TECHNICAL FIELD

The present invention relates to a cylindrical ceramic sputtering target capable of forming a homogeneous thin film to the end of life by sputtering, and a manufacturing apparatus and manufacturing method thereof.

A magnetron-type rotating cathode sputtering apparatus is an apparatus that has a magnetic field generating device inside a cylindrical sputtering target and performs sputtering while rotating the target while cooling from the inside of the target. For this reason, in the flat magnetron sputtering apparatus, the use efficiency of the target material is 20 to 30%, whereas in the magnetron-type rotating cathode sputtering apparatus, the remarkably high use efficiency of 60% or more can be realized, so that high productivity is obtained. In addition, by rotating the target, the power that can be applied per unit area becomes larger than that of a conventional flat plate magnetron sputtering apparatus, so that a high film-forming speed is obtained. A cylindrical sputtering target joins a cylindrical sputtering target material to a cylindrical base material with solder normally, and is formed.

In recent years, a glass substrate used for a flat panel display or a solar cell is enlarged, and in order to form a thin film on this enlarged substrate, a long cylindrical sputtering target exceeding 3 m in length is required.

Such a rotating cathode sputtering method is widely used in a metal target that is easy to process into a cylindrical shape and has strong mechanical strength. However, since a ceramic target material is weak with low intensity|strength, it is easy to generate|occur|produce a crack, a deformation|transformation, etc. during manufacture. For this reason, in a ceramic target, although a short cylindrical shape target material could be manufactured, it was difficult to manufacture a long cylindrical target material with high performance.

In such a situation, in a ceramic target, it is performed by arranging a plurality of short cylindrical target materials in an axial direction and using them.

For example, in Patent Document 1, a long cylindrical target material produced by stacking short cylindrical target materials is described. By setting it to 0.5 mm or less, the technique of suppressing the generation|occurrence|production of arcing and particle|grains resulting from a level|step difference is disclosed.

However, when sputtering is performed using the elongate cylindrical target material produced by stacking such a short cylindrical target material, the whole target material will not be shaved off uniformly, but erosion will advance locally in a certain site|part. At this time, the base material may be exposed in the locally eroded site, and as a result, the base material is sputtered, and a homogeneous sputtered film cannot be obtained. Thus, in the elongate cylindrical target material which consists of several short cylindrical target materials, the target material was not able to be used until the original life end. Such local erosion can occur even when there is only one cylindrical target material to be used.

As mentioned above, in a ceramic target, there existed a problem that the high productivity characteristic of the manufacturing method using a cylindrical sputtering target could not be ensured.

Japanese Patent Laid-Open No. 2010-100930

An object of the present invention is to provide a cylindrical ceramic sputtering target capable of forming a homogeneous thin film up to the end of life by sputtering, and a manufacturing apparatus and manufacturing method thereof.

The inventors found that, in a cylindrical ceramic sputtering target, eccentricity between the base material and the target material is the main cause that local erosion occurs during sputtering and the base material is exposed to a specific site before reaching the original life end, The present invention has been completed.

That is, the present invention provides a cylindrical ceramic sputtering target comprising a cylindrical base material, a cylindrical ceramic target material, and solder for joining the cylindrical base material and the cylindrical ceramic target material, wherein the cylindrical ceramics on the outer surface of the cylindrical ceramic target material is provided. The cylindrical ceramic sputtering target is applied with a dial gauge at a position of 7 mm inside from both ends of the target material, and 15 mm outside from both ends of the cylindrical ceramic target material on the outer peripheral surface of the cylindrical base material as fulcrums. A cylindrical ceramic sputtering target, characterized in that when the scale value of the dial gauge is measured by rotating the dial gauge, the difference between the maximum value and the minimum value of the dial gauge scale is 1.0 mm or less at any measurement location.

The cylindrical ceramic sputtering target preferably has a curvature of 0.6 mm or less.

Said cylindrical ceramic sputtering target WHEREIN: The said cylindrical ceramics target material may contain at least two divided cylindrical ceramics target materials, In this case, in the outer surface of each said divided cylindrical ceramics target material, from the both ends of the said divided cylindrical ceramics target material. A dial gauge is placed at a position of 7 mm inside, respectively, and the cylindrical ceramic sputtering target is rotated once on the outer circumferential surface of the cylindrical base material with positions 15 mm outside from both ends of the cylindrical ceramic target material as a fulcrum. When the scale value of is measured, it is preferable that the difference between the maximum value and the minimum value of the scale value of the dial gauge is 1.0 mm or less at any measurement location.

Said cylindrical ceramic sputtering target WHEREIN: When the said cylindrical ceramic target material contains at least two divided cylindrical ceramic target materials, it is preferable that all the steps|steps between the said divided cylindrical ceramic target materials adjacent to each other are 0.3 mm or less.

Said cylindrical ceramic sputtering target WHEREIN: It is preferable that the shift|offset|difference in the both ends of the said cylindrical base material and the said cylindrical ceramic target material is 0.5 mm or less.

Said cylindrical ceramic sputtering target WHEREIN: It is preferable that the said cylindrical base material is a product made from titanium or a product made from a titanium alloy, or a product made from molybdenum or a product made from a molybdenum alloy.

Said cylindrical ceramic sputtering target WHEREIN: It is preferable that the length of the said cylindrical ceramic target material is 500 mm or more.

Said cylindrical ceramic sputtering target WHEREIN: It is preferable that the relative density of the said cylindrical ceramic target material is 95 % or more.

Further, the present invention provides a lower holding member for holding the lower end of the upright cylindrical ceramic target material and the lower end of the cylindrical base material accommodated in the hollow of the cylindrical ceramic target material;

a target material holding member for holding an upper end of the cylindrical ceramic target material;

a substrate holding member for holding the upper end of the cylindrical substrate;

A cylindrical ceramic sputtering target manufacturing apparatus comprising a connecting member made of titanium or a titanium alloy, or a molybdenum or molybdenum alloy connecting the lower holding member, the target material holding member, and the base holding member.

In the said manufacturing apparatus, it is preferable that the said connection member consists of at least two columnar members.

Moreover, this invention is a manufacturing method of a cylindrical ceramic sputtering target using the manufacturing apparatus of the said cylindrical ceramic sputtering target,

The lower end and upper end of the cylindrical ceramic target material are respectively held by the lower holding member and the target material holding member, and the product made of titanium or titanium alloy accommodated in the hollow part of the cylindrical ceramic target material by the lower holding member and the base material holding member, Or maintaining the lower end and upper end of the cylindrical substrate made of molybdenum or molybdenum alloy, respectively,

heating the manufacturing apparatus, the cylindrical ceramic target material and the cylindrical base material to a temperature equal to or higher than the melting point of solder used for bonding the cylindrical ceramic target material and the cylindrical base material;

The molten solder is injected into a void formed between the cylindrical ceramic target material and the cylindrical substrate;

A method for manufacturing a cylindrical ceramic sputtering target, wherein the manufacturing apparatus, the cylindrical ceramics target material, the cylindrical substrate, and the solder injected into the void portion are cooled to a temperature lower than the melting point of the solder.

In the above manufacturing method, the cylindrical ceramic target material may consist of at least two divided cylindrical ceramic target materials, and in this case, the lower end and the upper end of the cylindrical ceramic target material are respectively held by the lower holding member and the target material holding member, It is preferable to adjust so that the level|step difference between the said divided cylindrical ceramics target materials may be set to 0.3 mm or less.

The cylindrical ceramic sputtering target of the present invention can form a homogeneous thin film to the end of life by sputtering. The manufacturing apparatus and manufacturing method of the cylindrical ceramic sputtering target of this invention can manufacture the said cylindrical ceramic sputtering target suitably.

1 is a schematic diagram showing a state in which a cylindrical target 1 is placed on a target rotating device 4 in the horizontal direction.
2 : is schematic which shows the state in which the cylindrical target 11 which consists of four division|segmentation target materials of a cylindrical target material was set|positioned on the target rotation apparatus 4 horizontally.
It is a schematic partial explanatory drawing of the cylindrical shape target which has a cylindrical ceramics target material which consists of two division|segmentation target materials.
Fig. 4 is a diagram showing one end surface of a cylindrical ceramic sputtering target 31;
Fig. 5 is a longitudinal sectional view of a manufacturing apparatus 40 as a specific example of the manufacturing apparatus for a cylindrical ceramic sputtering target of the present invention.
Fig. 6 is a diagram showing one end surface of a cylindrical ceramic sputtering target.
7 : is a longitudinal sectional view of the manufacturing apparatus 60 of an ITO cylindrical sputtering target.
8 is a photograph showing the state of erosion during sputtering of the ITO cylindrical sputtering target manufactured in Example 1. FIG.
9 is a photograph showing a state of erosion during sputtering of the ITO cylindrical sputtering target manufactured in Comparative Example 1. FIG.

[Cylindrical Ceramics Sputtering Target]

A cylindrical ceramic sputtering target of the present invention is a cylindrical ceramic sputtering target comprising a cylindrical base material, a cylindrical ceramic target material, and solder for joining the cylindrical base material and the cylindrical ceramic target material, wherein an outer surface of the cylindrical ceramic target material comprises: The cylindrical ceramic sputtering target is applied with a dial gauge at a position of 7 mm inside from both ends of the cylindrical ceramic target material, and 15 mm outside from both ends of the cylindrical ceramic target material on the outer peripheral surface of the cylindrical base material as a fulcrum. When the scale value of the dial gauge is measured by rotating the dial gauge, the difference between the maximum value and the minimum value of the scale value of the dial gauge is 1.0 mm or less at any measurement location.

In the cylindrical ceramic sputtering target (hereinafter also referred to as cylindrical target) of the present invention, a cylindrical base material is accommodated in a hollow portion of a cylindrical ceramic target material (hereinafter also referred to as cylindrical target material), and the cylindrical base material and the cylindrical target material are joined by soldering. has been

FIG. 1 is a schematic diagram showing a state in which a cylindrical target 1 is placed on a target rotating device 4 in the horizontal direction. The cylindrical target 1 is equipped with the cylindrical base material 2 and the cylindrical shape target material 3 joined to the cylindrical base material 2 with solder. The target rotating device 4 has rotating spheres 5a and 5b. The cylindrical target 1 is placed on the target rotation device 4 so that the rotary spheres 5a and 5b abut on both ends of the cylindrical substrate 2 . The position where the rotary spheres 5a and 5b abut against the cylindrical substrate 2 becomes the rotational points 7a and 7b. The fulcrum 7a and 7b is adjusted so that it may become a position of 15 mm outside from the end surfaces 6a and 6b of the cylindrical target material 3, respectively.

A dial gauge (not shown) is applied to the position of 7 mm inside from the end surface 6a in the outer surface of the cylindrical shape target material 3 shown by arrow Xa. The target rotating device 4 is driven to rotate the cylindrical target 1 once. At this time, the scale value of the dial gauge is continuously measured, and the difference Da between the maximum value and the minimum value of the scale value is calculated. Similarly, a dial gauge (not shown) is applied to the position of 7 mm inside from the end surface 6b in the outer surface of the cylindrical shape target material 3 shown by arrow Xb. The target rotating device 4 is driven to rotate the cylindrical target 1 once. At this time, the scale value of the dial gauge is continuously measured, and the difference Db between the maximum value and the minimum value of the scale value is calculated. When the scale value of the dial gauge while rotating the cylindrical target 1 once is constant, the difference between a maximum value and a minimum value shall be 0 mm. In the cylindrical target of the present invention, the difference Da and Db between the maximum value and the minimum value respectively obtained at the measurement locations indicated by arrows Xa and Xb are 1.0 mm or less. Hereinafter, the difference between the maximum value and the minimum value of the scale value of the dial gauge is also referred to as "eccentricity".

Cylindrical target of the present invention WHEREIN: Since all the eccentricities obtained in each measurement location are 1.0 mm or less, erosion advances locally in the specific site|part of a cylindrical target material during sputtering, and before reaching the original life-end, it is in that site|part. Since the base material is not exposed and erosion progresses uniformly in the entire surface of the target material, a homogeneous film can be formed up to the original life end of the target material. On the other hand, when at least one eccentricity obtained in each measurement location is larger than 1.0 mm, erosion will advance locally in the specific site|part of a cylindrical target material during sputtering, and it will be easy to expose a base material to that site|part before reaching an original life end. . This is because the cylindrical target rotates about the axis of the cylindrical substrate as the rotation axis during sputtering, so if the eccentricity is greater than 1.0 mm, the outer peripheral surface of the cylindrical target material, which is the sputtering surface, has a greatly different rotation radius for each part. As a result, the sputter surface is the It is thought that this is because the energy received by each site differs greatly, and in particular, the site receiving a large energy is preferentially eroded.

Cylindrical sputtering target WHEREIN: Eccentricity of a cylindrical base material and a cylindrical target material arises even if it adjusts so that the position of a cylindrical base material and a cylindrical target material may not be eccentric at the time of joining of a cylindrical base material and a cylindrical target material, heating at the time of joining. This is because the positional relationship between them fluctuates in the process of cooling and the like. The present invention realizes a cylindrical ceramic sputtering target having an eccentricity of 1.0 mm or less by the manufacturing apparatus and manufacturing method of the cylindrical ceramic sputtering target described later.

In the cylindrical target of this invention, it is so preferable that the eccentricity obtained in each measurement location is small, and any eccentricity is 1.0 mm or less, It is preferable that it is 0.6 mm or less, It is more preferable that it is 0.4 mm or less.

It is preferable that curvature is 0.6 mm or less, as for the cylindrical target of this invention, it is more preferable that it is 0.4 mm or less, It is more preferable that it is 0.2 mm or less. If the curvature of a cylindrical target is 0.6 mm or less, erosion will advance uniformly in the target material whole surface during sputtering, and it will be easy to form a homogeneous film|membrane up to the original life end of a target material.

The curvature of a cylindrical target can be measured as follows.

The cylindrical target 1 is left still horizontally on the target rotation apparatus 4 of FIG. 1, for example. A straight edge is applied to the outer surface along the longitudinal direction of the cylindrical target material 3, and the maximum length of the gap which arises between the cylindrical target material 3 and a straight edge is measured using a gap gauge. Based on the first measurement point, the measurement is performed at a total of eight measurement points determined at intervals of 45 degrees in the circumferential direction, and the maximum value among the eight maximum lengths obtained is defined as the curvature of the cylindrical target 1 .

Since the curvature is obtained by such a measurement method, for example, when the entire cylindrical target is bent in a beautiful arch shape, the cylindrical target is left still so that the convex side is directly below the vertical, and the vertical The measured value by the gap gauge in the longitudinal direction center part of a cylindrical target at the time of measuring by putting a straight edge on the direct upper side turns into curvature.

Cylindrical target of this invention WHEREIN: The cylindrical shape target material may contain the two or more division|segmentation cylindrical ceramics target materials (henceforth a division|segmentation target material). In this case, two or more cylindrical division|segmentation target materials are joined to a cylindrical base material with mutual fixed clearance gap.

Cylindrical target of this invention WHEREIN: When a cylindrical target material consists of only one target material, as mentioned above, by prescribing the eccentricity obtained from the positional relationship between the cylindrical target material and cylindrical base material in the both ends of the cylindrical target material, life Although the effect that a homogeneous film|membrane can be formed up to the end is acquired, when a cylindrical target material consists of two or more division|segmentation target materials, it is important that the eccentricity in both ends of each division|segmentation target material exists in a certain numerical range. . That is, on the outer surface of each division target material, a dial gauge is placed at a position 7 mm inside from both ends of the division target material, and 15 mm outside from both ends of the cylindrical ceramic target material on the outer peripheral surface of the cylindrical base material. When the cylindrical ceramic sputtering target is rotated once with the position as a fulcrum and the scale value of the dial gauge is measured, the difference between the maximum value and the minimum value of the scale value of the dial gauge is 1.0 mm or less at any measurement location. The eccentricity in case a cylindrical target material consists of two or more division|segmentation target materials is demonstrated with reference to drawings below.

FIG. 2 : is schematic which shows the state in which the cylindrical target 11 from which a cylindrical target material consists of four division|segmentation target materials was set|placed on the target rotation apparatus 4 horizontally. The cylindrical target 11 is equipped with the cylindrical base material 12 and the cylindrical target material 13 joined to the cylindrical base material 12 with solder. Cylindrical target material 13 consists of division|segmentation target materials 13-1, 13-2, 13-3, and 13-4, and division|segmentation target materials 13-1-13-4 are a fixed space|interval in this order. is placed with About the target rotation apparatus 4 and the fulcrum 17a and 17b, it is the same as the description in FIG.

A dial gauge (not shown) is applied to the position of 7 mm from the end surface 16a in the outer surface of the division|segmentation target material 13-1 shown by arrow X1a. The target rotating device 4 is driven to rotate the cylindrical target 11 once. At this time, the scale value of the dial gauge is continuously measured, and the difference D1a between the maximum value and the minimum value of the scale value is calculated. Similarly, a dial gauge (not shown) is applied to the position of 7 mm inside from the end surface 16b in the outer surface of the division|segmentation target material 13-1 shown by arrow X1b. The target rotating device 4 is driven to rotate the cylindrical target 11 once. At this time, the scale value of the dial gauge is continuously measured, and the difference D1b between the maximum value and the minimum value of the scale value is calculated. Hereinafter, similarly, the measurement location indicated by the arrows X2a and X2b with respect to the division target material 13-2, the measurement location indicated by the arrow X3a and X3b with respect to the division target material 13-3, and the division target material ( 13-4), the above operation is performed at the measurement locations indicated by arrows X4a and X4b, and the cars D2a, D2b, D3a, D3b, D4a and D4b are obtained. When the scale value of the dial gauge while rotating the cylindrical target 11 once is constant, the difference between a maximum value and a minimum value shall be 0 mm. In the cylindrical target of this invention, all of the cars D1a, D1b, D2a, D2b, D3a, D3b, D4a, and D4b are 1.0 mm or less. It is similar to the above also about the eccentricity in case the number of division target materials is other than four.

Even when a cylindrical target material consists of two or more division|segmentation target materials, it is so preferable that the eccentricity obtained in each measurement location is small, and any eccentricity is 1.0 mm or less, It is preferable that it is 0.6 mm or less, It is more preferable that it is 0.4 mm or less. .

When a cylindrical shape target material contains two or more division|segmentation target materials, it is preferable that the level difference between division target materials is 0.3 mm or less. The level difference between division|segmentation target materials is demonstrated using FIG. It is a schematic partial explanatory drawing of the cylindrical shape target which has a cylindrical shape target material which consists of two division|segmentation target materials. Cylindrical base material ( 22) determines the point X at which the distance from the outer circumferential surface 22a is maximum. _{Let L X} be the distance from the outer peripheral surface 22a of the point X in the direction D orthogonal to the axis line Z including the point X. The point Y in the direction D on the outer periphery of the cross-section 23b which faces each other in the cross-section 23a including the point X is calculated|required. _{Let L Y} be the distance from the outer peripheral surface 22a in the said direction D in the point Y. L _X and L _X -L difference _Y of the _Y and L is the step between the divided target material.

When a cylindrical target material consists of N pieces of division|segmentation target materials, the level|step difference between N-1 pieces of division|segmentation target materials exists. In the cylindrical target of this invention, it is preferable that all said N-1 pieces of said level|step difference are 0.3 mm or less. The step difference is more preferably 0.2 mm or less, and most preferably 0 mm.

When at least one of the steps of the cylindrical target is larger than 0.3 mm, energy is concentrated on a specific part of the target material during sputtering, abnormal discharge occurs in that part, or local erosion proceeds as in the case of the eccentricity. There may be cases where As a result, when a crack generate|occur|produces or when the ceramic which is a material of a target material is all consumed at the time of erosion progressing locally, the base material, such as solder used as a bonding material, will sputter|spatter.

In the cylindrical target of this invention, it is preferable that the shift|offset|difference in the both ends of a cylindrical base material and a cylindrical shape target material is 0.5 mm or less.

In this invention, the shift|offset|difference in the both ends of a cylindrical base material and a cylindrical target material is the distance between the center point with respect to the outer periphery of the cylindrical target material in both end surfaces of a cylindrical target, and the center point with respect to the outer periphery of a cylindrical base material. . 4 : is a figure which shows the one end surface of the cylindrical target 31. As shown in FIG. The cylindrical target 31 consists of the cylindrical base material 32, the cylindrical target material 33, and the solder 34 which joins the cylindrical base material 32 and the cylindrical target material 33. As shown in FIG. And the distance between the center point (33b) for the outline (33a) of the center point (32b) and the cylindrical target material (33) for the outline (32a) of the cylindrical base 32 to the L _A. Similarly, also in the end face of the other end of the cylindrical target 1, and the distance between the center point on the outline of a center point and a cylindrical target material 33 of the outline of a cylindrical substrate 32 to L _B. Even if it is a case where a cylindrical target material consists of two or more division|segmentation target materials, the shift|offset|difference of a cylindrical base material and a cylindrical shape target material is defined similarly to the above.

The shift at both ends of the cylindrical base material and the cylindrical target material can be obtained by determining the center point with respect to the outer periphery of the cylindrical target material and the center point with respect to the outer periphery of the cylindrical base material in the cross section, and measuring the distance It can also be obtained by the method shown in the example.

A cylindrical target of the present invention, it is preferable that the shift L _A, L _B is greater than both 0.5㎜. It is so preferable that the said shift|offset|difference is small, More preferably, it is 0.3 mm or less, More preferably, it is 0.1 mm or less, and it is most preferable that it is 0 mm.

Cylindrical target of this invention WHEREIN: The length of a cylindrical shape target material does not have a restriction|limiting in particular as long as evaluation of the said eccentricity is possible, Generally, it is 500-4000 mm. When a cylindrical shape target material consists of several division|segmentation target materials, the sum of the sum total of the length of a division target material and the length of the gap between division target materials turns into the length of the said cylindrical shape target material.

Since the cylindrical base material and the cylindrical target material are joined by solder containing metal indium or the like as a component, when the cylindrical target material is made of a divided cylindrical target material, if the number of the divided cylindrical target materials is too large, eccentricity or step may occur. becomes For this reason, it is preferable that the number of objects of the division|segmentation target material joined with respect to one cylindrical base material is ten or less, More preferably, it is seven or less, More preferably, it is three or less.

Similarly, when the length of a division|segmentation target material is too short, the number of division target materials will increase, and a division|segmentation number will increase too much with respect to the length of the target material which should be used. For this reason, it is preferable that the length of a division|segmentation target material is 300 mm or more, More preferably, it is 450 mm or more, More preferably, it is 600 mm or more, Especially preferably, it is 850 mm or more. The length of the division target material does not need to be mutually the same, and you may use it combining the division target materials of different length. For example, in order to adjust the length of the whole cylindrical shape target material, you may use it combining 1-2 division|segmentation target materials shorter than 300 mm for an elongate division|segmentation target material.

When a cylindrical target material consists of two or more division|segmentation target materials, the clearance gap between division|segmentation target materials is 0.1-0.5 mm normally.

The outer diameter of a cylindrical target material is 145-177 mm normally, and an inner diameter is 134-136 mm normally.

There is no restriction|limiting in particular in the kind of ceramics which is a material of a cylindrical target material, For example, an indium oxide-tin oxide type material (ITO), an aluminum oxide-zinc oxide type material (AZO), and an indium oxide-gallium oxide-zinc oxide type material. (IGZO) etc. are mentioned.

The relative density of a cylindrical target material becomes like this. Preferably it is 95 % or more, More preferably, it is 99 % or more, More preferably, it is 99.5 % or more. As the relative density of the target material is higher, the cracking of the target material due to thermal shock or temperature difference during sputtering can be prevented, and the thickness of the target material can be effectively utilized without waste. In addition, generation of particles and arcing is reduced, and good film quality can be obtained. The upper limit of the relative density is not particularly limited, but is usually 100%.

As shown in FIGS. 1 and 2, etc., the said cylindrical base material is longer than a cylindrical target material, has a size which can join the said cylindrical target material, and there is no restriction|limiting in particular in the length as long as evaluation of the said eccentricity is possible. The material of the cylindrical base material is preferably titanium or a titanium alloy, or molybdenum or a molybdenum alloy, since the ceramics used as the target material and the thermal expansion coefficient are close to each other. Titanium alloy is an alloy containing titanium as a main component, and usually refers to an alloy having a titanium content of 90 to 99 mass%, and ASTM standards Gr.5, Gr.7, Gr.9, Gr.11, Gr.12, etc. are known. there is. A molybdenum alloy is an alloy which has molybdenum as a main component, and means an alloy whose molybdenum content is 50-99.95 mass % normally, TZM, HMC, Mo-W, Mo-Re, Mo-La, etc. are known. On the other hand, when copper or SUS, which is normally used, is used as a material for a cylindrical substrate, the difference in coefficient of thermal expansion with the cylindrical target material is large, so that it is difficult to obtain a cylindrical substrate without bending or cracking the target material during bonding. There is a problem of

There is no restriction|limiting in particular in the kind of the said solder, According to a target material, it can select and use it suitably from the solder currently used conventionally, For example, the solder made from indium, etc. are mentioned.

[Manufacturing apparatus and manufacturing method of cylindrical ceramic sputtering target]

The said cylindrical ceramic sputtering target can be manufactured with the following manufacturing apparatus and manufacturing method of a cylindrical ceramic sputtering target.

The manufacturing apparatus of the said cylindrical ceramic sputtering target (henceforth, it is also called the manufacturing apparatus of a cylindrical target),

a lower holding member for holding the lower end of the upright cylindrical ceramic target material and the lower end of the cylindrical base material accommodated in the hollow portion of the cylindrical ceramic target material;

a target material holding member for holding an upper end of the cylindrical ceramic target material;

a substrate holding member for holding the upper end of the cylindrical substrate;

The connecting member made of titanium or titanium alloy, or molybdenum or molybdenum alloy which connects the said lower holding member, the target material holding member, and the base material holding member

has

The manufacturing method of the said cylindrical ceramic sputtering target (hereinafter also referred to as a manufacturing method of a cylindrical target),

A method for manufacturing a cylindrical ceramic sputtering target using the above cylindrical ceramic sputtering target manufacturing apparatus,

The lower end and the upper end of the cylindrical ceramic target material are respectively held by the holding member and the target material holding member, and the product made of titanium or titanium alloy or molybdenum accommodated in the hollow part of the cylindrical ceramic target material by the holding member and the base material holding member. Maintaining the lower end and upper end of the cylindrical substrate made of or molybdenum alloy, respectively,

The manufacturing apparatus, the cylindrical ceramic target material, and the cylindrical base material are heated to a temperature equal to or higher than the melting point of solder used for bonding the cylindrical ceramic target material and the cylindrical base material, and formed between the cylindrical ceramic target material and the cylindrical base material Injecting the molten solder into the void part,

The manufacturing apparatus, the cylindrical ceramics target material, the cylindrical base material, and the solder injected into the said space|gap part are cooled to the temperature lower than melting|fusing point of the said solder.

Hereinafter, the manufacturing apparatus and manufacturing method of the said cylindrical target are demonstrated with reference to FIG. Moreover, the manufacturing apparatus of the cylindrical target of this invention is not restrict|limited to the shape etc. shown in drawing, as long as it has the said function.

5 : is a longitudinal sectional view of the manufacturing apparatus 40 which is one specific example of the manufacturing apparatus of the said cylindrical target. FIG. 5 : has shown the manufacturing apparatus 40 in the state which attached the cylindrical base material 41 and the cylindrical shape target material 42 to the manufacturing apparatus 40. As shown in FIG. The cylindrical target material 42 is formed of the three cylindrical division|segmentation target materials 42a.

The manufacturing apparatus 40 has the lower holding member 43 , the target material holding member 44 , the base material holding member 45 , and the connecting member 46 .

The lower holding member 43 is a connecting member mounting portion 43a having four mounting holes 43e for mounting the connecting member 46, and a target material holding portion holding the divided target material 42a in an upright state ( 43b), a substrate holding portion 43c for holding the cylindrical substrate 41 in an upright state, and a fixture 43d. The connecting member mounting part 43a, the target material holding part 43b, and the base material holding part 43c are ring-shaped, are integrally formed in this order from the outside, and are made of titanium, for example.

The cylindrical target material 42 is inserted into the target material holding part 43b, and between the lower end surface of the cylindrical target material 42, and the target material holding part 43b, for example, O made from Teflon (trademark). It is attached to the target material holding part 43b with the ring 47 interposed therebetween. The cylindrical base material 41 is accommodated in the hollow part of the cylindrical target material 42, and between the lower end surface of the cylindrical base material 41 and the base material holding part 43c, for example, a Teflon (registered trademark) O-ring ( 48), it is attached to the base material holding part 43c. In this way, the lower holding member 43 holds the lower end of the cylindrical target material 42 and the cylindrical base material 41 . Moreover, when the cylindrical target material 42 and the cylindrical base material 41 are hold|maintained by the lower holding member 43 in this way, the space|gap part 49 is formed between the cylindrical target material 42 and the cylindrical base material 41. .

The connecting member 46 is composed of four columnar members 46a. In Fig. 5, only two of the four columnar members 46a are shown. The four columnar members 46a are inserted into the mounting holes 43e provided in the lower holding member 43, and are fixed to the lower holding member 43 by a fastener 43d such as a nut. The target material holding member 44 and the base material holding member 45 are attached to the four columnar members 46a. In this way, the connecting member 46 connects the lower holding member 43 , the target material holding member 44 , and the base material holding member 45 . Two or three may be sufficient as the number of the columnar members 46a, and five or more may be sufficient as them. The one with more columnar members 46a can connect the lower holding member 43, the target material holding member 44, and the base material holding member 45 more firmly, and the manufacturing apparatus 40 is stable.

The material of the connecting member 46 is selected according to the material of the cylindrical substrate. The manufacturing apparatus of the cylindrical target of this invention is used with respect to the cylindrical base material made from the product made from titanium or a titanium alloy, or the product made from molybdenum or a molybdenum alloy. For example, when the cylindrical base material is made of titanium or a titanium alloy, the connecting member 46 is also made of titanium or a titanium alloy. Similarly, when the cylindrical base material is made of molybdenum or a molybdenum alloy, the connecting member 46 is also made of molybdenum or a molybdenum alloy. The titanium alloy and the molybdenum alloy are the same as the description of the above-described cylindrical substrate. The significance of the connecting member 46 being made of titanium or a titanium alloy, or made of molybdenum or a molybdenum alloy will be described later.

The target material holding member 44 is comprised from the connecting member mounting part 44a, the target material holding part 44b, and the fixture 44c. The connecting member mounting part 44a and the target material holding part 44b are ring-shaped, are integrally formed in this order from the outside, and are made of titanium, for example. The connecting member mounting portion 44a has four mounting holes 44d, the columnar member 46a is inserted into each mounting hole 44d, and fixed to the connecting member 46 by a fastener 44c such as a nut. do. The position of the target material holding member 44 is freely adjustable along the connecting member 46 . The cylindrical target material 42 is inserted into the target material holding part 44b, and between the upper end surface of the cylindrical target material 42, and the target material holding part 44b, for example, O made from Teflon (trademark). It is attached to the target material holding part 44b with the ring 50 interposed therebetween. That is, the target material holding part 44b hold|maintains the cylindrical target material 42 so that it may be pressed from the upper side. In this way, the target material holding member 44 holds the upper end of the cylindrical target material 42 .

The base material holding member 45 has the connecting member mounting part 45a, the base material pressing part 45b, and the fixture 45c. The connecting member mounting portion 45a has four mounting holes 45d. A columnar member 46a is inserted into each mounting hole 45d, and the base material holding member 45 is fixed to the connecting member 46 by a fastener 45c such as a nut. The position of the substrate holding member 45 is freely adjustable along the connecting member 46 . The substrate pressing portion 45b is provided on the lower side of the connecting member mounting portion 45a, has a disk shape, and holds the upper end of the cylindrical substrate 41 so as to push the upper surface of the cylindrical substrate 41 from above. In the manufacturing apparatus of the cylindrical target of this invention, what is necessary is just to be able to fix the base material holding member so that the position of a cylindrical base material does not shift, and the member which hold|maintains the upper end of a cylindrical base material in the side surface may be sufficient as it.

The cylindrical target of this invention can be manufactured using the manufacturing apparatus 40 by the manufacturing method containing the following assembly process, a heating process, a soldering process, and a cooling process, for example.

(Assembly process)

As shown in FIG. 5 , the cylindrical base material 41 and the cylindrical target material 42 are attached to the manufacturing apparatus 40 . First, a cylindrical substrate 41 made of titanium or a titanium alloy, or a molybdenum or molybdenum alloy is installed in the manufacturing apparatus 40 . The titanium alloy and the molybdenum alloy are the same as the description of the above-described cylindrical substrate. The cylindrical substrate 41 is attached to the substrate holding portion 43c of the lower holding member 43 to which an O-ring 48 made of, for example, Teflon (registered trademark) is attached. Thereby, leakage of the bonding material from the lower end of the space|gap part 49 formed between the cylindrical base material 41 and the cylindrical target material 42, and the flaw to the cylindrical base material 41 can be prevented.

If there is warpage in the cylindrical base material 41, it is reflected in the eccentricity or warpage of the manufactured cylindrical target. Therefore, it is preferable to confirm the warpage of the cylindrical base material 41 before attaching it to the manufacturing apparatus 40. Although there is no restriction|limiting in particular in the measuring method of the curvature of the cylindrical base material 41, For example, the following method is mentioned. The cylindrical base material is placed horizontally on the target rotating device 4 of FIG. 1 . A straight edge is placed on the cylindrical substrate, and the maximum length of the gap between the cylindrical substrate and the straight edge is measured using a gap gauge. Based on the first measurement point, the measurement is performed at a total of eight measurement points determined at intervals of 45 degrees in the circumferential direction, and the maximum value among the eight maximum lengths obtained can be defined as the curvature of the cylindrical substrate. Moreover, you may calculate|require curvature using a three-dimensional shape measuring machine. The curvature of the cylindrical substrate 41 is preferably 0.6 mm or less, more preferably 0.4 mm or less, still more preferably 0.2 mm or less, and most preferably 0 mm. When the curvature of the cylindrical base material 41 exceeds 0.6 mm, the correction process of the curvature of the cylindrical base material 41 may be included. Although there is no restriction|limiting in particular in the method of correcting the curvature of the said cylindrical base material 41, For example, there exists a method of performing bend correction using a press machine.

Next, the cylindrical target material 42 is attached to the outer side of the said cylindrical base material 41. First, the O-ring 47 made from Teflon (trademark) is attached to the target material holding part 43b of the lower holding member 43, for example, and the division|segmentation target material 42a is attached to the target material holding part 43b. ) is attached to The bottom surface and the side surface of the target material holding part 43b and the base material holding part 43c are perpendicular|vertical, and the outer diameter of the cylindrical base material 41, the inner diameter of the base material holding part 43c, and the outer diameter of the division|segmentation target material 42a. And the inner diameter of the target material holding part 43b is made into substantially the same dimension. That is, the lower holding member 43 makes the cylindrical base material 41 and the division target material 42a upright, and also generates the space|gap 49 of the cylindrical base material 41 and the division target material 42a, and also cylindrical. The shift|offset|difference of the lower end of the base material 41 and the division|segmentation target material 42a is also performing the role of a jig as 0.5 mm or less.

Two other division target materials 42a are piled up on the division target material 42a attached to the target material holding part 43b. On the basis of the division target material 42a affixed to the target material holding part 43b, the level difference between the division target materials 42a to be piled up after that is adjusted. Between the division target materials 42a, the O-ring 51 made from Teflon (trademark) is interposed, for example. The O-ring 50 made of, for example, Teflon (trademark) is mounted on the division|segmentation target material 42a placed on the top, and the target material holding|maintenance of the target material holding member 44 is attached to the division|segmentation target material 42a of the uppermost. It is attached to the part 44b, and it is made to press the cylindrical target material 42 from the upper side by the target material holding part 44b. At this time, the positions of the three division target materials 42a are adjusted so that the eccentricity between the division target material 42a and the cylindrical base material 41 becomes small, for example, the said eccentricity in a cylindrical target is made into 1.0 mm or less. . Moreover, it is made into 0.3 mm or less so that the level|step difference between the division|segmentation target materials 42a may become small. Thus, the upper end of the cylindrical target material 42 is hold|maintained by the target material holding member 44. As shown in FIG.

Finally, the substrate pressing portion 45b of the substrate holding member 45 is pressed against the upper end surface of the cylindrical substrate 41 . At this time, so that the shift|offset|difference of the upper end part of the cylindrical base material 41 and the cylindrical target material 42 may become small, for example, 0.5 mm or less, Preferably it is 0.3 mm or less, More preferably, it is 0.1 mm or less, More preferably, it is 0 mm to adjust. In this way, the upper end of the cylindrical substrate 41 is held by the substrate holding member 45 . When the cylindrical base material 41 is hold|maintained by the base material holding member 45, it is designed so that the upper end may protrude from the upper opening of the cylindrical target material 42. As shown in FIG.

By fixing the target material holding member 44 to the connecting member 46 with the fixture 44C and the base material holding member 45 with the fixture 45C, the cylindrical base material 44 and the cylindrical target material 42 are firmly fixed. It is fixed to the manufacturing apparatus 40.

(Warming process)

The manufacturing apparatus 40, that is, the cylindrical base material 41 attached to the lower holding member 43, the target material holding member 44, the base material holding member 45, and the connecting member 46, and the manufacturing apparatus 40, and The cylindrical target material 42 is heated to the temperature more than melting|fusing point of the solder used for bonding of the cylindrical shape target material 42 and the cylindrical base material 41. For example, when indium solder is used as the solder, it is heated to 160 to 250°C.

(Solder injection process)

The solder melted from the upper side of the target material holding member 44 is injected into the void portion 49 . The injection method is not particularly limited and may be injected so that the voids 49 are filled with molten solder.

The injection amount is a sufficient amount for bonding the cylindrical target material 42 and the cylindrical base material 41 .

(Cooling process)

The molten solder injected into the manufacturing apparatus 40, the cylindrical base material 41, the cylindrical target material 42, and the space|gap 49 is cooled to temperature lower than melting|fusing point of solder. For example, when indium solder is used as the solder, it is cooled to 150° C. or less.

By the above operation, the cylindrical base material 41 and the cylindrical target material 42 are joined by solder, and a cylindrical target is manufactured. The manufactured cylindrical target is removed from the manufacturing apparatus 40, and the O-ring 51 is also removed. The location where the O-ring 51 was interposed becomes the clearance gap between division|segmentation target materials.

In the above manufacturing method, the cylindrical base material 41 and the cylindrical target material 42 are firmly fixed to the manufacturing apparatus 40, so that the cylindrical base material 41 and the cylindrical target material 42 can occur at the time of bonding. It is possible to suppress the relative positional shift of

However, since the cylindrical base material and the cylindrical target material expand in the heating process and contract in the cooling process, the relative positional shift between the cylindrical base material and the cylindrical target material is sufficiently suppressed only by firmly fixing the cylindrical base material and the cylindrical target material to the manufacturing apparatus. can't

For example, when the cylindrical base material and the cylindrical target material of the connecting member have thermal expansion coefficients significantly different from those of the cylindrical base material, the degree of expansion in the heating process and the degree of shrinkage in the cooling process are the connecting member and the cylindrical base material or the cylindrical target material. In particular, when a cylindrical base material and a cylindrical target material are being firmly fixed to a manufacturing apparatus, large stress arises in a cylindrical base material in a cooling process. As a result, a large relative displacement of the cylindrical base material and the cylindrical target material occurs, and even if adjusted so that the eccentricity and the deviation between the cylindrical base material and the cylindrical target material are reduced in the assembly process, the cylindrical base material and the cylindrical target material are manufactured in the cylindrical target material. It cannot be made into 1.0 mm or less of the said eccentricity of a and a shift|offset|difference to 0.5 mm or less.

Moreover, a relatively large positional shift also arises between division target materials, and even if it adjusts so that the level difference between division target materials may be 0.3 mm or less in an assembly process, in the manufactured cylindrical target, the level difference between division target materials is 0.3 mm or less. can't keep Moreover, a crack or a warp may arise in the manufactured cylindrical target.

For example, when the connecting member is made of SUS, the cylindrical base material made of titanium or titanium alloy, or molybdenum or molybdenum alloy, and the cylindrical target material made of ceramics and the connecting member have large coefficients of thermal expansion, so as described above, the cylindrical base material The said eccentricity with a cylindrical target material cannot be made into 1.0 mm or less, and a shift|offset|difference cannot be made into 0.5 mm or less, nor can the level difference between division|segmentation target materials be made into 0.3 mm or less.

In the manufacturing apparatus 40, the connecting member 46 is a product made from titanium or a product made from a titanium alloy, or a product made from molybdenum or a product made from a molybdenum alloy. The cylindrical base material 41 used in the manufacturing method is also made of titanium or a titanium alloy, or made of molybdenum or a molybdenum alloy.

The connecting member 46 is made of titanium or a titanium alloy when the cylindrical base 41 is made of titanium or a titanium alloy, and when the cylindrical base 41 is made of molybdenum or a molybdenum alloy, it is made of molybdenum or a molybdenum alloy. . Accordingly, the coefficient of thermal expansion of the connecting member 46 is equal to or close to the coefficient of thermal expansion of the cylindrical substrate 41 .

In addition, since the thermal expansion coefficient of ceramics approximates the thermal expansion coefficient of titanium or titanium alloy, or molybdenum or molybdenum alloy, the thermal expansion coefficient of the cylindrical target material 42 is approximated to the thermal expansion coefficient of the connecting member 46 and the cylindrical base material 41. .

For this reason, in the said manufacturing method using the manufacturing apparatus 40, the degree of the expansion in a heating process and the degree of contraction in a cooling process are the connection member 46, the cylindrical base material 41, and the cylindrical target material ( 42), even if it is a case where a cylindrical base material and a cylindrical shape target material are firmly fixed to a manufacturing apparatus, big stress does not arise in a cylindrical base material in a cooling process. As a result, if it is adjusted so that the relatively large position shift of the cylindrical base material 41 and the cylindrical target material 42 does not arise, and the eccentricity and the shift|offset|difference of the cylindrical base material 41 and the cylindrical target material 42 become small in an assembly process , eccentricity and deviation are reduced even in the manufactured cylindrical target. For this reason, the said eccentricity is 1.0 mm or less, and the said shift|offset|difference can obtain the cylindrical shape target whose said shift|offset is 0.5 mm or less by adjusting suitably the positional relationship of the cylindrical base material 41 and the cylindrical shape target material 42 in an assembly process.

Moreover, if it adjusts so that a relatively large step difference does not arise between division target materials 42a mutually, either, and the level difference between division target materials 42a becomes 0.3 mm or less in an assembly process, also in the manufactured cylindrical target material division target material 42a ) can be 0.3 mm or less. In addition, it is possible to prevent cracks or warping in the manufactured cylindrical target.

[Example]

The following measurement and evaluation were performed about the ITO cylindrical sputtering target manufactured by the Example and the comparative example.

(Measurement of eccentricity of cylindrical target)

A cylindrical target was placed horizontally on the target rotating device 4 shown in Fig. 1 . It adjusted so that it might become the position of 15 mm outside from the both ends of the cylindrical target material the point 7a and 7b at which the rotary spheres 5a and 5b contact|abutted to a cylindrical base material, respectively.

At this time, the roundness of the cylindrical base material and the parallelism of the rotating apparatus 4 were investigated. A dial gauge was applied to the outer peripheral surface of the cylindrical base material at a position of 15 mm outside from both ends of the cylindrical target material, the target rotation device 4 was driven, and the cylindrical target was rotated once. The scale value of the dial gauge at this time was continuously measured, and the difference between the maximum value and the minimum value of the scale value was measured. The above measurement was performed about all the ITO cylindrical sputtering targets manufactured by the Example and the comparative example, and it confirmed that any difference between a maximum value and a minimum value was 0.2 mm or less.

One division target material WHEREIN: The dial gauge was applied to the position of 7 mm inside from the one end in the outer surface, the target rotation apparatus 4 was driven, and the cylindrical target was rotated once. The scale value of the dial gauge at this time was continuously measured, and the eccentricity which is the difference between the maximum value and the minimum value of the scale value was computed. Similarly, the dial gauge was applied to the position of 7 mm inside from the other end of the division|segmentation target material, the target rotation apparatus 4 was driven, the cylindrical target 1 was rotated once, and the eccentricity was computed similarly. The same operation was performed about all the division|segmentation target materials, and the eccentricity in each both ends was computed.

(Measurement of deviation between cylindrical base material and cylindrical target material)

The shift|offset|difference of the cylindrical base material and the cylindrical target material was measured as follows.

The ITO cylindrical sputtering target is left still on a surface plate, and as shown in FIG. 6, the largest length (diameter of the circle) among the line segments connecting two points on the outer periphery (circle) of the cylindrical target material in one section. On the line segment L having , the length of the two lamination parts of the cylindrical target material and the solder layer (the length between AB and the length between CD shown in Fig. 6) is measured with a depth gauge, and the two measured values The difference d ((length between CDs)-(length between ABs)) in FIG. 6 was calculated. Among the line segments L, the value X obtained by dividing the difference d obtained in the line segment L giving the largest difference d by 2 was calculated|required. The maximum value X was similarly calculated|required also in the other cross section. The larger numerical value of two X calculated|required in both cross sections was made into the shift|offset|difference of the cylindrical base material and cylindrical shape target material in this ITO cylindrical sputtering target. In addition, FIG. 6 is a figure similar to FIG.

(Measurement of the step difference between the divided target materials)

About the level|step difference of the division|segmentation target material adjacent to each other, the height difference between the mutually adjacent cross sections of these division|segmentation target materials was measured at 8 places used as equal intervals in the circumferential direction with a depth gauge, and the maximum value of the difference was made into a level|step difference.

(Measurement of warpage of cylindrical sputtering target)

The ITO cylindrical sputtering target was left still on the target rotation apparatus 4 of FIG. 1 in the horizontal direction. Here, a straight edge was applied to the outer peripheral surface of the cylindrical target material joined to the cylindrical base material, and the clearance gap which arises between a cylindrical target material and a straight edge was measured using the clearance gap gauge. Said measurement was performed about 8 places used as equal intervals in the circumferential direction, and the maximum value between poles was made into the curvature of an ITO cylindrical sputtering target.

(Measurement of the number of split target materials that cracked at the time of joining)

The cylindrical target material of the ITO cylindrical sputtering target was observed visually, and the number of objects of the division|segmentation target material which a crack generate|occur|produced among nine division|segmentation target materials was measured.

(Evaluation of erosion during sputtering)

Sputtering was performed under the following conditions using the manufactured ITO cylindrical sputtering target. The state of the erosion of the cylindrical target material after sputtering was observed by visual observation.

<Sputtering conditions>

substrate temperature 100℃

Sputter pressure 0.2Pa

Power 20㎾

Target rotation speed 10rpm

(Measurement of the number of split target materials in which cracks occurred by sputtering)

After the said sputtering, the cylindrical target material of an ITO cylindrical sputtering target was observed visually, and the number of objects of the division|segmentation target material which a crack generate|occur|produced among nine division|segmentation target materials was measured.

[Example 1]

Using the manufacturing apparatus 40 shown in FIG. 5, the ITO cylindrical sputtering target was manufactured as follows.

Prepare nine ITO cylindrical split target materials with an outer diameter of 153.0 mm, inner diameter 135.0 mm, and length 300.0 mm, mask the outer peripheral surface of the cylindrical split target material with a heat-resistant film and tape, and use an ultrasonic soldering iron on the bonding surface (inner peripheral surface) to In Solder was undercoated.

The bonding surface (outer peripheral surface) of the cylindrical base material made of titanium having an outer diameter of 133.0 mm, an inner diameter of 125.0 mm, and a length of 3000.0 mm was also undercoated with In solder using an ultrasonic soldering iron. The cylindrical substrate was attached to a substrate holding portion 43c equipped with an O-ring 48 made of Teflon (registered trademark). Next, the O-ring 47 made from Teflon (trademark) was attached to the target material holding part 43b, and the said cylindrical division|segmentation target material was affixed to the target material holding part 43b by one. At this time, with the lower holding member 43, the shift|offset|difference of the said cylindrical base material lower end part and the said cylindrical division target material lower end part adjusted so that it might become 0.1 mm. Moreover, the space|gap part 49 was formed between the said cylindrical base material and the said cylindrical division|segmentation target material.

Moreover, the remaining eight cylindrical division target materials were piled up on the said cylindrical division|segmentation target material. An O-ring 51 made of Teflon (registered trademark) having a thickness of 0.5 mm was interposed between the cylindrical division target materials. The O-ring 50 is mounted on the cylindrical division target material placed on the top, the top cylindrical division target material is attached to the target material holding part 44b, and the cylindrical target material is held by the target material holding part 44b. pushed from above. At this time, the position of nine cylindrical division target materials was adjusted, and it was made for all the steps between cylindrical division target materials to be 0.2 mm or less. Thus, the upper end part of the cylindrical target material was hold|maintained by the target material holding member 44.

Next, the base material pressing part 45b was pressed against the upper end of the cylindrical base material, and the upper end of the cylindrical base material was hold|maintained by the base material holding member 45. At this time, the position of the jig was adjusted, measuring the distance between the surface of a cylindrical shape target material and the cylindrical base material surface with a depth gauge so that the shift|offset|difference of a cylindrical base material upper end part and a cylindrical shape target material upper end part might be set to 0.1 mm or less.

Finally, the lower holding member 43 is used as a fixture 43d, the target material holding member 44 is used as a fixture 44c, and the base material holding member 45 is used as a fixture 45c to the connecting member 46 made of titanium. By fixing, the cylindrical base material and the cylindrical target material were fixed to the manufacturing apparatus 40 firmly.

The manufacturing apparatus 40, the cylindrical base material, and the cylindrical shape target material were heated at 180 degreeC.

From the upper side of the target material holding member 44 , the molten In solder in a sufficient amount for bonding between the cylindrical target material and the cylindrical substrate was injected into the void portion 49 .

The molten solder injected into the manufacturing apparatus 40, the cylindrical base material, the cylindrical target material, and the space|gap 49 was cooled to 140 degreeC.

After confirming that the In solder was solidified, the manufactured ITO cylindrical sputtering target was removed from the manufacturing apparatus 40, the O-ring was removed, and the In solder which remained between cylindrical division|segmentation target materials was scraped off.

Table 1 shows the measurement results of the above-mentioned eccentricity measurement, displacement measurement, level difference measurement, warpage measurement, and number of division target materials in which cracks were performed on the manufactured ITO cylindrical sputtering target. A photograph showing the state of erosion at the end of sputtering is shown in FIG. 8 . 8, in the cylindrical target of Example 1, exposure of the base material by the local erosion of a cylindrical shape target material was not seen.

The eccentricity shown in Table 1 is the largest value among all the eccentricities calculated in each measurement location.

The notation "X to Y" in "step difference" in Table 1 indicates that the minimum value of the eight measured steps is X and the maximum value is Y. For example, "0.10-0.20" indicates that the minimum value is 0.10 mm and the maximum value is 0.20 mm among the eight measured steps.

[Example 2]

An ITO cylindrical sputtering target was manufactured by operation similar to Example 1 except having used the manufacturing apparatus 40 which the connection member 46 was made from a titanium alloy (Ti-6AL-4V ASTM standard Gr.5).

Table 1 shows the measurement results of the above-mentioned eccentricity measurement, displacement measurement, level difference measurement, warpage measurement, and number of division target materials in which cracks were performed on the manufactured ITO cylindrical sputtering target. About the state of erosion at the time of completion|finish of sputtering, it was the result similar to the photograph shown in FIG.

[Example 3]

An ITO cylindrical sputtering target was manufactured by operation similar to Example 1 except having used the manufacturing apparatus 40 whose cylindrical base material was made from molybdenum and the connecting member 46 was made from molybdenum.

Table 1 shows the measurement results of the above-mentioned eccentricity measurement, displacement measurement, level difference measurement, warpage measurement, and number of division target materials in which cracks were performed on the manufactured ITO cylindrical sputtering target. About the state of erosion at the time of completion|finish of sputtering, it was the result similar to the photograph shown in FIG.

[Comparative Example 1]

An ITO cylindrical sputtering target was manufactured by operation similar to Example 1 except having used the manufacturing apparatus which differed from the manufacturing apparatus 40 only that the connecting member was made from SUS304.

Table 1 shows the measurement results of the above-mentioned eccentricity measurement, displacement measurement, step measurement, warpage measurement, and the number of split target materials having cracks after sputtering, which were performed on the manufactured ITO cylindrical sputtering target. A photograph showing the state of erosion at the end of sputtering is shown in FIG. 9 . The part (indicated by the arrow attached to FIG. 9) horizontally long white displayed in the upper part of FIG. 9 is a part exposed by the cylindrical base material below a cylindrical target material by sputtering. That is, in the cylindrical target of the comparative example 1, the cylindrical target material was not sputtered uniformly, but local erosion had arisen in the cylindrical target material.

[Comparative Example 2]

An ITO cylindrical sputtering target was manufactured using the manufacturing apparatus 60 shown in FIG. The manufacturing apparatus 60 differs from the manufacturing apparatus 40 in the point which a connection member is made from SUS304, the point which does not have the base material holding member 45, and the point which has the four cylindrical target material pressing members 62. As shown in FIG. The cylindrical target material pressing member 62 is provided one by one in the four columnar member 46a. The cylindrical target material pressing member 62 is comprised from the engaging part 62a couple|bonded with the columnar member 46a, and the pressing part 62b which presses the cylindrical target material. The pressing part 62b is rod-shaped, spans all the division|segmentation parts between cylindrical division target materials, and presses a cylindrical shape target material from a side surface, and has the function of suppressing the movement of the side direction of a cylindrical shape target material.

An ITO cylindrical sputtering target is manufactured by operation similar to Example 1 except that the cylindrical base material is not hold|maintained by the base material holding member 45, and the cylindrical target material is pressed by the cylindrical target material pressing member 62. did.

Table 1 shows the measurement results of the above-mentioned eccentricity measurement, displacement measurement, level difference measurement, warpage measurement, and number of division target materials in which cracks were performed on the manufactured ITO cylindrical sputtering target. About the state of erosion at the time of completion|finish of sputtering, it was the result similar to the photograph shown in FIG.

[Table 1]

In an Example and a comparative example, although the positional relationship of each division cylindrical target material and cylindrical base material at the time of cylindrical target manufacture all adjusted similarly, the ITO cylindrical sputtering target obtained in Examples 1-3 is eccentric, The gap between the cylindrical base material and the cylindrical target material, and the step between the division target material is smaller than the ITO cylindrical sputtering target obtained in Comparative Examples 1 and 2, and the curvature of the ITO cylindrical sputtering target is also the ITO cylindrical sputtering obtained in the Comparative Example 1. smaller than the target. Moreover, the crack generation|occurrence|production number of the division cylindrical shape target material after sputtering was less than the ITO cylindrical shape sputtering target obtained in the comparative example 1.

This was the same material as the cylindrical base material in Example 1, and a cylindrical target was manufactured using a manufacturing apparatus having a ceramic target material and a titanium connecting member having a close thermal expansion coefficient, and in Example 2, similar to the cylindrical base material. A cylindrical target was manufactured using a manufacturing apparatus having a connecting member made of a titanium alloy having a close thermal expansion coefficient to the ceramic target material. By manufacturing a cylindrical target using the manufacturing apparatus which has a near molybdenum-made connecting member, the degree of thermal expansion and contraction|shrinkage of the cylindrical target material, cylindrical base material, and the connecting member which generate|occur|produced during manufacture approximates, and a cylindrical base material and a cylindrical target. It is thought that this is because the stress applied to the ash is reduced.

On the other hand, in Comparative Example 1, since the cylindrical target was manufactured using the manufacturing apparatus which has the connecting member made from SUS which differs greatly in the thermal expansion coefficient from a cylindrical base material and a ceramic target material, the cylindrical target material which arises during manufacture, a cylindrical base material, and The degree of thermal expansion and contraction of the connecting member is greatly different, and as a result, a contractile stress is generated in the connecting member, and the stress is mainly caught on the cylindrical base material, and the cylindrical base material is greatly bent. I think. Moreover, stress is also applied to a cylindrical shape target material, as thickness becomes thin by sputtering, the said residual stress is strongly received, and it is thought that a crack generate|occur|produced in a division|segmentation target material during sputtering.

In the comparative example 2, the base material holding member 45 was removed from the manufacturing apparatus used by the comparative example 1, and the cylindrical shape target was manufactured using the manufacturing apparatus to which the cylindrical target material pressing member was added. In this apparatus, since there is no base material holding member 45, it is thought that shift|offset|difference and eccentricity arose in the cylindrical base material upper part and cylindrical sputtering target material upper part at the time of In solder cooling.

When sputtering was performed using the above-described cylindrical target, the ITO cylindrical sputtering targets obtained in Examples 1 to 3 could be sputtered to the end of life as shown in FIG. 8, and a homogeneous thin film could be formed. On the other hand, in the ITO cylindrical sputtering targets obtained in Comparative Examples 1 and 2, as shown in Fig. 9, an over-sputtering location (a portion indicated by an arrow appended to Fig. 9) occurs, and sputtering cannot be performed until the end of life, A homogeneous thin film could not be formed.

1, 11: Cylindrical target
2, 12: cylindrical substrate
3, 13: cylindrical target material
4: target rotation device
5a, 5b: rotating ball
6a, 6b, 16a, 16b: cross section
7a, 7b, 17a, 17b: branch
40, 60: manufacturing device
41: cylindrical substrate
42: cylindrical target material
43: lower holding member
44: target material holding member
45: substrate holding member
46: connection member
47, 48, 50, 51 : O-ring
49: void
62: cylindrical target material pressing member

Claims (12)

delete delete delete delete delete delete delete delete a lower holding member for holding the lower end of the upright cylindrical ceramic target material and the lower end of the cylindrical base material accommodated in the hollow portion of the cylindrical ceramic target material;
a target material holding member for holding an upper end of the cylindrical ceramic target material;
a substrate holding member for holding the upper end of the cylindrical substrate to push the upper surface of the cylindrical substrate from above;
The connecting member made of titanium or titanium alloy, or molybdenum or molybdenum alloy which connects the said lower holding member, the target material holding member, and the base material holding member
A manufacturing apparatus for a cylindrical ceramic sputtering target having a. 10. The method of claim 9,
The manufacturing apparatus of the cylindrical ceramic sputtering target in which the said connection member consists of at least two columnar members. A method for producing a cylindrical ceramic sputtering target using the apparatus for producing a cylindrical ceramic sputtering target according to claim 9 or 10, the method comprising:
The lower end and the upper end of the cylindrical ceramic target material are respectively held by the lower holding member and the target material holding member, and the titanium or titanium alloy product is accommodated in the hollow of the cylindrical ceramic target material by the lower holding member and the base holding member. , or maintaining the lower end and upper end of the cylindrical substrate made of molybdenum or molybdenum alloy, respectively,
heating the manufacturing apparatus, the cylindrical ceramic target material and the cylindrical base material to a temperature equal to or higher than the melting point of solder used for bonding the cylindrical ceramic target material and the cylindrical base material;
The molten solder is injected into a void formed between the cylindrical ceramic target material and the cylindrical substrate;
The manufacturing method of the cylindrical ceramic sputtering target which cools the said manufacturing apparatus, the cylindrical ceramics target material, the cylindrical base material, and the solder injected into the said void part to a temperature lower than the melting|fusing point of the said solder. A method for manufacturing the cylindrical ceramic sputtering target according to claim 11, comprising:
When the cylindrical ceramic target material is made of at least two divided cylindrical ceramic target materials, and the lower end and the upper end of the cylindrical ceramic target material are respectively held by the lower holding member and the target material holding member, the step difference between the divided cylindrical ceramic target materials is 0.3 A manufacturing method of a cylindrical ceramic sputtering target adjusted to be mm or less.

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