KR102424487B1 - 재료들의 소결 및 그를 이용하는 부착 방법들 - Google Patents

재료들의 소결 및 그를 이용하는 부착 방법들 Download PDF

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KR102424487B1
KR102424487B1 KR1020207035949A KR20207035949A KR102424487B1 KR 102424487 B1 KR102424487 B1 KR 102424487B1 KR 1020207035949 A KR1020207035949 A KR 1020207035949A KR 20207035949 A KR20207035949 A KR 20207035949A KR 102424487 B1 KR102424487 B1 KR 102424487B1
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substrate
metal
film
die
core
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KR20200142123A (ko
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샤믹 고샬
브이. 사티쉬 쿠마르
파반 비쉬와나쓰
란짓 에스. 판데르
렘야 찬드란
수타파 무케르제
시울리 사르카르
바와 싱
라빈드라 모한 바트칼
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알파 어?뻠磁? 솔루션 인크.
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Priority to KR1020227025309A priority Critical patent/KR20220106240A/ko
Publication of KR20200142123A publication Critical patent/KR20200142123A/ko
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/1017—Multiple heating or additional steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
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    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/07—Metallic powder characterised by particles having a nanoscale microstructure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/22—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces for producing castings from a slip
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • B22F5/006—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of flat products, e.g. sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K1/0016—Brazing of electronic components
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
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    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
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    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015120156B4 (de) * 2015-11-20 2019-07-04 Semikron Elektronik Gmbh & Co. Kg Vorrichtung zur materialschlüssigen Verbindung von Verbindungspartnern eines Leistungselekronik-Bauteils und Verwendung einer solchen Vorrichtung
JP6815133B2 (ja) 2016-08-31 2021-01-20 日東電工株式会社 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート
US20180166369A1 (en) * 2016-12-14 2018-06-14 Texas Instruments Incorporated Bi-Layer Nanoparticle Adhesion Film
US9865527B1 (en) 2016-12-22 2018-01-09 Texas Instruments Incorporated Packaged semiconductor device having nanoparticle adhesion layer patterned into zones of electrical conductance and insulation
EP3569329B1 (en) * 2017-01-11 2023-11-01 Resonac Corporation Copper paste for pressureless bonding, bonded body and semiconductor device
US9941194B1 (en) 2017-02-21 2018-04-10 Texas Instruments Incorporated Packaged semiconductor device having patterned conductance dual-material nanoparticle adhesion layer
DE112017007299B4 (de) * 2017-03-23 2024-10-10 Mitsubishi Electric Corporation Halbleiterelement-bonding-körper, halbleitereinheit und verfahren zur herstellung eines halbleiterelement-bonding-körpers
JP7127269B2 (ja) * 2017-10-23 2022-08-30 昭和電工マテリアルズ株式会社 部材接続方法
JP7043794B2 (ja) * 2017-11-06 2022-03-30 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板およびヒートシンク付パワーモジュール用基板の製造方法
CN108016032B (zh) * 2017-12-05 2019-08-13 广西艾盛创制科技有限公司 一种提高打印件强度韧性的3d打印成型工艺方法和装置
CN108098092A (zh) * 2017-12-21 2018-06-01 成都川美新技术股份有限公司 一种采用焊锡膏对射频基板与壳体进行烧结的方法
JP7143156B2 (ja) * 2018-04-27 2022-09-28 日東電工株式会社 半導体装置製造方法
KR102040020B1 (ko) * 2018-08-29 2019-11-04 주식회사 영동테크 은과 구리의 고용체를 포함하는 금속 나노 분말
JP7228422B2 (ja) * 2019-03-15 2023-02-24 日東電工株式会社 焼結接合用シート、基材付き焼結接合用シート、および焼結接合用材料層付き半導体チップ
CN109819384A (zh) * 2019-04-09 2019-05-28 重庆三峡学院 一种mems麦克风封装器件的制造方法
JP6675622B1 (ja) * 2019-04-25 2020-04-01 アサヒ・エンジニアリング株式会社 電子部品のシンタリング装置および方法
CN113767470A (zh) * 2019-05-07 2021-12-07 阿尔法装配解决方案公司 即烧结型银膜
JP6624626B1 (ja) * 2019-07-29 2019-12-25 アサヒ・エンジニアリング株式会社 電子部品のシンタリング装置
US11373976B2 (en) * 2019-08-02 2022-06-28 Rockwell Collins, Inc. System and method for extreme performance die attach
EP3817044A1 (en) * 2019-11-04 2021-05-05 Infineon Technologies Austria AG Semiconductor package with a silicon carbide power semiconductor chip diffusion soldered to a copper leadframe part and a corresponding manufacturing method
CN113345861A (zh) * 2020-02-18 2021-09-03 朋程科技股份有限公司 功率组件的半成品及其制造方法以及功率组件的制造方法
DE112021001365T5 (de) * 2020-03-04 2022-12-22 Denso Corporation Halbleitervorrichtung und verfahren zur fertigung der halbleitervorrichtung
JP7604779B2 (ja) * 2020-03-23 2024-12-24 富士電機株式会社 半導体製造装置及び半導体装置の製造方法
EP4128326A2 (de) * 2020-06-23 2023-02-08 Siemens Aktiengesellschaft Verfahren zur kontaktierung eines leistungshalbleiters auf einem substrat sowie leistungshalbleitermodul mit einem leistungshalbleiter und einem substrat
CN114823596A (zh) * 2021-01-18 2022-07-29 日东电工株式会社 半导体装置、以及半导体装置的制造方法
JP2022111042A (ja) * 2021-01-18 2022-07-29 日東電工株式会社 半導体装置、及び、半導体装置の製造方法。
FR3121277B1 (fr) * 2021-03-26 2024-02-16 Safran Electronics & Defense Procédé pour assembler un composant électronique à un substrat
WO2023282976A2 (en) * 2021-05-24 2023-01-12 Corning Research & Development Corporation Systems and methods of joining substrates using nano-particles
GB2612776A (en) * 2021-11-10 2023-05-17 Asm Assembly Systems Singapore Pte Ltd Deposit levelling
JP2023073819A (ja) * 2021-11-16 2023-05-26 富士電機株式会社 半導体装置及びその製造方法
KR20240161145A (ko) * 2022-03-15 2024-11-12 알파 어셈블리 솔루션스 인크. 소결 준비된 다층 와이어/리본 본드 패드 및 다이 상단 부착 방법
JP7683528B2 (ja) * 2022-04-05 2025-05-27 株式会社三洋物産 遊技機
JP7683529B2 (ja) * 2022-04-05 2025-05-27 株式会社三洋物産 遊技機
US20240182757A1 (en) * 2022-12-02 2024-06-06 Wolfspeed, Inc. Core-Shell Particle Die-Attach Material
EP4421055A1 (de) 2023-02-23 2024-08-28 Heraeus Electronics GmbH & Co. KG Kupfer-keramik-substrat mit sinterbarer oberseite
EP4421056A1 (de) 2023-02-23 2024-08-28 Heraeus Electronics GmbH & Co. KG Metall-keramik-substrat mit sinterbarer oberseite
DE102023104436A1 (de) 2023-02-23 2024-08-29 Heraeus Deutschland GmbH & Co. KG Metall-Keramik-Substrat mit sinterbarer Oberseite
EP4421054A1 (de) 2023-02-23 2024-08-28 Heraeus Electronics GmbH & Co. KG Kupfer-keramik-substrat mit sinterbarer oberseite
EP4443488A1 (de) 2023-04-04 2024-10-09 Heraeus Electronics GmbH & Co. KG Substratanordnung mit oberflächenstruktur
EP4443487A1 (de) 2023-04-04 2024-10-09 Heraeus Electronics GmbH & Co. KG Substratanordnung mit oberflächenstruktur
JP2025086811A (ja) 2023-11-28 2025-06-09 株式会社Pfa 接合体製造装置および接合体製造方法
CN118737861B (zh) * 2024-09-04 2024-11-12 深圳平创半导体有限公司 一种晶圆的金属化方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095832A (ja) 2002-08-30 2004-03-25 Fuji Electric Holdings Co Ltd フリップチップ実装方法
JP2005044986A (ja) 2003-07-28 2005-02-17 Nippon Steel Corp 半導体装置およびその製造方法
JP2007224420A (ja) 2006-02-24 2007-09-06 Samsung Electro-Mechanics Co Ltd コア−シェル構造の金属ナノ粒子及びその製造方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3871845A (en) 1973-06-25 1975-03-18 Clarkes Sheet Metal Industrial air filter
JPS5725248Y2 (enExample) * 1977-01-18 1982-06-01
US6562169B2 (en) * 2001-01-17 2003-05-13 International Business Machines Corporation Multi-level web structure in use for thin sheet processing
US20050129843A1 (en) * 2003-12-11 2005-06-16 Xerox Corporation Nanoparticle deposition process
US8257795B2 (en) * 2004-02-18 2012-09-04 Virginia Tech Intellectual Properties, Inc. Nanoscale metal paste for interconnect and method of use
US7524351B2 (en) * 2004-09-30 2009-04-28 Intel Corporation Nano-sized metals and alloys, and methods of assembling packages containing same
KR100718726B1 (ko) * 2005-12-22 2007-05-16 성균관대학교산학협력단 폴리디비닐벤젠 구형 입자와 금속을 이용한 코어/쉘도전입자 및 이의 제조방법
US7968008B2 (en) * 2006-08-03 2011-06-28 Fry's Metals, Inc. Particles and inks and films using them
KR20080078396A (ko) * 2007-02-23 2008-08-27 엘지전자 주식회사 전극용 페이스트 조성물과 그 제조방법 및 이를 이용하는플라즈마 디스플레이 패널과 그 제조방법
KR101316253B1 (ko) * 2007-06-27 2013-10-08 동우 화인켐 주식회사 도전성 페이스트 조성물, 이를 포함하는 전극 및 상기전극의 제조방법
US8555491B2 (en) * 2007-07-19 2013-10-15 Alpha Metals, Inc. Methods of attaching a die to a substrate
KR100838647B1 (ko) 2007-07-23 2008-06-16 한국과학기술원 Ａｃｆ／ｎｃｆ 이중층을 이용한 웨이퍼 레벨 플립칩패키지의 제조방법
US7749300B2 (en) 2008-06-05 2010-07-06 Xerox Corporation Photochemical synthesis of bimetallic core-shell nanoparticles
WO2009156990A1 (en) 2008-06-23 2009-12-30 Yissum Research Development Company Of The Hebrew University Of Jerusalem, Ltd. Core-shell metallic nanoparticles, methods of production thereof, and ink compositions containing same
KR20100007035A (ko) * 2008-07-11 2010-01-22 주식회사 효성 이방성 도전 필름의 제조방법 및 이에 의해 제조된 이방성도전 필름
JP5748957B2 (ja) 2009-01-14 2015-07-15 国立大学法人九州大学 コアシェル型金属ナノ粒子の製造方法
KR101074917B1 (ko) 2009-03-31 2011-10-18 전북대학교산학협력단 코어-쉘 구조 복합나노입자를 감지물질로 이용한 박막형 고활성 가스센서 및 그 제조방법
WO2010117102A1 (ko) * 2009-04-09 2010-10-14 서강대학교 산학협력단 콜로이드 입자들을 단결정들로 정렬하는 방법
US20110318213A1 (en) 2009-09-08 2011-12-29 Carol Anne Handwerker Shell activated sintering of core-shell particles
KR101651932B1 (ko) * 2009-10-26 2016-08-30 한화케미칼 주식회사 카르복실산을 이용한 전도성 금속 박막의 제조방법
EP2630267B1 (de) * 2010-10-20 2020-07-22 Robert Bosch GmbH Ausgangswerkstoff für eine sinterverbindung
KR102713298B1 (ko) 2010-11-03 2024-10-04 알파 어셈블리 솔루션스 인크. 소결 재료 및 이를 이용한 부착 방법
US20140141195A1 (en) * 2012-11-16 2014-05-22 Rong-Chang Liang FIXED ARRAY ACFs WITH MULTI-TIER PARTIALLY EMBEDDED PARTICLE MORPHOLOGY AND THEIR MANUFACTURING PROCESSES
US9475963B2 (en) * 2011-09-15 2016-10-25 Trillion Science, Inc. Fixed array ACFs with multi-tier partially embedded particle morphology and their manufacturing processes
US20140120356A1 (en) * 2012-06-18 2014-05-01 Ormet Circuits, Inc. Conductive film adhesive
US10239153B2 (en) * 2012-09-06 2019-03-26 Edison Welding Institute, Inc. Inertia friction welding system for martensite-free joining of materials
KR20240095365A (ko) * 2012-10-29 2024-06-25 알파 어셈블리 솔루션스 인크. 소결 분말
WO2014141173A1 (en) * 2013-03-15 2014-09-18 Sandvik Intellectual Property Ab Method of joining sintered parts of different sizes and shapes
KR101455958B1 (ko) 2013-09-09 2014-10-31 천광주 마름방지장치를 구비한 출몰식 필기구
US10131177B2 (en) * 2014-02-07 2018-11-20 Entrust Datacard Corporation Barrier coating for a substrate
JP6480806B2 (ja) * 2014-05-23 2019-03-13 ゼネラル・エレクトリック・カンパニイ セラミックと金属を接合するための方法およびその封止構造
CN109792806B (zh) * 2016-09-27 2022-07-29 诺维尔里斯公司 使用磁加热的预时效系统和方法
CN108016032B (zh) * 2017-12-05 2019-08-13 广西艾盛创制科技有限公司 一种提高打印件强度韧性的3d打印成型工艺方法和装置
CN108098092A (zh) * 2017-12-21 2018-06-01 成都川美新技术股份有限公司 一种采用焊锡膏对射频基板与壳体进行烧结的方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095832A (ja) 2002-08-30 2004-03-25 Fuji Electric Holdings Co Ltd フリップチップ実装方法
JP2005044986A (ja) 2003-07-28 2005-02-17 Nippon Steel Corp 半導体装置およびその製造方法
JP2007224420A (ja) 2006-02-24 2007-09-06 Samsung Electro-Mechanics Co Ltd コア−シェル構造の金属ナノ粒子及びその製造方法

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