CN113767470A - 即烧结型银膜 - Google Patents

即烧结型银膜 Download PDF

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Publication number
CN113767470A
CN113767470A CN202080031579.1A CN202080031579A CN113767470A CN 113767470 A CN113767470 A CN 113767470A CN 202080031579 A CN202080031579 A CN 202080031579A CN 113767470 A CN113767470 A CN 113767470A
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CN
China
Prior art keywords
silver film
carrier
sintered
combined
layer
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Pending
Application number
CN202080031579.1A
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English (en)
Inventor
奥斯卡·卡塞列夫
M·J·西本胡纳
M·布尔格达
M·马尔兹
C·比尔格林
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Alpha Assembly Solutions Inc
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Alpha Metals Inc
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Publication of CN113767470A publication Critical patent/CN113767470A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D21/00—Casting non-ferrous metals or metallic compounds so far as their metallurgical properties are of importance for the casting procedure; Selection of compositions therefor
    • B22D21/06—Casting non-ferrous metals with a high melting point, e.g. metallic carbides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22C—FOUNDRY MOULDING
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    • B22C9/22—Moulds for peculiarly-shaped castings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D25/00—Special casting characterised by the nature of the product
    • B22D25/02—Special casting characterised by the nature of the product by its peculiarity of shape; of works of art
    • B22D25/04—Casting metal electric battery plates or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • H01L2924/12041—LED

Abstract

一种制备组合的即烧结型银膜和载体(1)的方法，该方法包括以下步骤：a)形成包括设计开口(5)的载体(2)；b)将银膜层(7)浇铸到该设计开口(5)中；例如浇铸银浆；以及c)干燥该载体(2)和该银膜层(7)以形成该组合的即烧结型银膜和载体(1)。该载体(2)可包括塑料载体，该塑料载体可通过使用等离子体粘结方法或使用温度稳定的胶永久性地粘结两个塑料薄膜来形成。该载体(2)可包括模版层(3)和背衬层(4)。该模板层(3)可限定该设计开口(5)。该背衬层(4)可被构造成用于密封该设计开口(5)的底部，其中在步骤b)开始时，该设计开口(5)的顶部可打开，用于接收该浇铸的银膜层(7)。将该即烧结型银与衬底(10)组合包括以下步骤：a)将组合的即烧结型银膜和载体(1)定位在该衬底(10)的顶部上，该组合的即烧结型银膜和载体包括具有设计开口(5)的载体(2)和浇铸到该设计开口(5)中的银膜层(7)，使得该银膜层(7)面朝下；b)通过层压将该银膜层(7)转印到该衬底(10)上；c)移除该组合的即烧结型银膜和载体(1)的该载体(2)；d)将该部件(22)放置到该衬底(10)上，使其与该转印的银膜层(7)接触以形成组件；以及e)烧结该组件以在该部件(22)和该衬底(10)之间产生银接点。在将部件(22)组装到衬底(10)的该方法的步骤b)中，该层压在3MPa至8MPa、任选地3MPa至6MPa、任选地8MPa的压力和130℃至150℃、任选地130℃的温度下使用层压机(11+12)。在该方法的步骤e)中，该烧结在10MPa的压力和250℃的温度下进行。

Description

即烧结型银膜
本说明书涉及接合电气或机械部件的方法，并且更具体地涉及将电子部件和相关联的器件附接到电路板上的方法。
背景技术
可用于附接管芯的即烧结型银膜将纳米银粉的物理特性和化学配方结合到允许接合各种电子器件的产品中以产生导热和导电界面。
US20120114927A1根据其说明书摘要指出，用于多芯片和单个部件的管芯附接的方法可涉及将烧结浆料印刷在衬底上或管芯的背面上。印刷可涉及模版印刷、丝网印刷或分配工艺。可在切割之前将浆料印刷在整个晶圆的背面上，或印刷在单独管芯的背面上。还可制造烧结膜并将其转印到晶片、管芯或衬底上。烧结后步骤可增加吞吐量。
发明内容
在第一方面，本公开提供了一种制备组合的即烧结型银膜和载体的方法，该方法包括以下步骤：
a)形成包括设计开口的载体；
b)将银膜层浇铸到设计开口中；以及
c)干燥载体和银膜层，以形成组合的即烧结型银膜和载体。
该方法还可包括以下步骤：
d)将组合的即烧结型银膜和载体轧制或切割成准备好供工业使用的单独片材。
在一些实施方案中，载体可包括塑料载体。
在一些实施方案中，载体可通过永久性地粘结两个塑料膜来形成。在一些实施方案中，可使用等离子体粘结工艺来粘结两个塑料薄膜。在一些其它实施方案中，可使用温度稳定的胶来粘结两个塑料薄膜。
载体可包括模版层和背衬层。
在一些实施方案中，模板层可限定设计开口。
在一些实施方案中，模板层可具有100微米至200微米、任选地150微米的厚度。附加地或另选地，模板层可包括PET膜。
在一些实施方案中，可冲切模板层以产生设计开口。在一些实施方案中，设计开口可为矩形或正方形。
背衬层可被构造用于密封设计开口的底部。
在一些实施方案中，背衬层可具有50微米的厚度。附加地或另选地，背衬层可包括PET膜。
在一些实施方案中，背衬层可用氧等离子体预处理。
在一些实施方案中，可使用层压机任选地在5MPa的压力和150℃的温度下粘结模板层和背衬层。
在步骤b)开始时，设计开口的顶部可打开，用于接收浇铸的银膜层。
在一些实施方案中，浇注银膜层可包括浇注银浆。
在一些实施方案中，步骤b)中的银膜层可包含溶剂。在步骤c)之后，溶剂的量减少，并且优选的是溶剂基本上不存在于组合的即烧结型银膜和载体中。然而，溶剂的一些残余物可能残留。
在一些实施方案中，干燥载体和银膜层以形成组合的即烧结型银膜和载体可在烘箱中进行，任选地在130℃下进行20分钟。
在第二方面，本公开提供了组合的即烧结型银膜和载体，该组合的即烧结型银膜和载体包括具有设计开口的载体和浇铸到设计开口中的银膜层。
在一些实施方案中，载体可包括塑料载体。
在一些实施方案中，载体可包括两个永久性粘结的塑料膜。
载体可包括模版层和背衬层。
在一些实施方案中，模板层可限定设计开口。
在一些实施方案中，模板层可具有100微米至200微米、任选地150微米的厚度。附加地或另选地，模板层可包括PET膜。
在一些实施方案中，设计开口可为矩形或正方形。
背衬层可密封设计开口的底部。
在一些实施方案中，背衬层可具有50微米的厚度。附加地或另选地，背衬层可包括PET膜。
银膜层可由浇铸银浆形成。银膜层在浇铸时可包含溶剂。
在第三方面，本公开提供了一种将部件组装到衬底的方法，该方法包括以下步骤：
a)将组合的即烧结型银膜和载体定位在衬底的顶部上，该组合的即烧结型银膜和载体包括具有设计开口的载体和浇铸到设计开口中的银膜层，使得银膜层面朝下；
b)通过层压将银膜层转印到衬底上；
c)移除组合的即烧结型银膜和载体的载体；
d)将部件放置到衬底上，使其与转印的银膜层接触以形成组件；以及
e)烧结组件以在部件和衬底之间形成银接点。
在一些实施方案中，在步骤b)中，层压可在3MPa至8MPa、任选地3MPa至6MPa、任选地8MPa的压力和130℃至150℃、任选地130℃的温度下使用层压机。
在一些实施方案中，在步骤e)中，烧结可在10MPa的压力和250℃的温度下进行。
在一些实施方案中，衬底可包括直接键合铜(DBC)、引线框架、夹片或夹片阵列、晶圆或用于电子器件的组装并且具有金属化表面的任何其他部件。
在一些实施方案中，部件可包括Si器件或SiC器件和/或管芯。
在一些实施方案中，组合的即烧结型银膜和载体可如上述第二方面中所定义。
在第四方面，本公开提供了通过烧结的银接点接合在一起的部件和衬底的组件，该组件可通过上述第三方面的方法获得。
附图说明
现在将参考附图仅以举例的方式描述本公开的一个或多个实施方案，其中：
图1a至图1c为根据本公开的组合的即烧结型银膜和载体的制造工艺的示意图；
图2a和图2b为层压工艺的示意图；
图3a是由PET膜形成的具有正方形开口的载体的照片；
图3b是在将银膜层浇铸到开口中之后的图3a的载体的照片；
图3c示出了银膜层的平坦度轮廓；
图4a和图4b示出了根据本公开的层压有图案化银膜的直接键合铜(DBC)衬底；并且
图5为示出置于图4a和图4b的银膜上并烧结到DBC衬底的管芯的照片。
具体实施方式
除非另有定义，否则本说明书中使用的所有技术和科学术语具有与要求保护的主题所属领域的读者通常理解的含义相同的含义。应当理解，本公开的上述发明内容和以下示例仅为示例性和说明性的，并不限制要求保护的任何主题。
以下描述涉及本公开的实施方案。对实施方案的描述并不意在包括所附权利要求书中要求保护的本公开的所有可能的实施方案。在以下实施方案中未明确叙述的许多修改、改进和等同物可落入所附权利要求书的范围内。除非上下文另有明确要求，否则被描述为一个实施方案的一部分的特征可与一个或多个其他实施方案的特征组合。
在某些情况下，使用即烧结型银膜的优选方法是将即烧结型银膜层压在衬底上，诸如直接键合铜(DBC)、引线框架或夹片。本公开描述了现有的烧结膜技术的延伸以形成具有独特图案的银膜，从而提供到衬底的特定区域上的选择性层压。该工艺适用于通过烧结工艺大批量制造各种功率模块和分立封装。该工艺利用可烧结银膜的能力和特殊图案化工艺来确保部件的准确定位和可靠连接。
图1a至图1c示出图案化工艺的示意图。首先，通过永久性地粘结两个塑料膜3、4来形成载体2。在一些实施方案中，载体2可由粘结在一起的两层聚对苯二甲酸乙二酯(PET)膜构成。
两个塑料膜可包括模版层3和背衬层4，如图1a所示。模版层3可称为“层1”，并且背衬层4可称为“层2”。
根据所需的图案设计将顶部塑料膜(即，模版层3)预切穿以形成开口/孔5。开口/孔5也可称为设计开口5。模版层3的主体在图1a中用数字6表示。孔5可以通过冲压穿过模版层3而成。开口/孔5可以是正方形、矩形或其他形状。模版层3可由PET形成并且可具有100微米至200微米的厚度。在一个非限制性实施方案中，载体2的模板层3由150微米厚的PET膜构成，该PET膜被冲切以产生13×13mm2的正方形开口/孔5。
底部塑料膜(即背衬层4)可由PET形成并且可具有50微米的厚度。背衬层4可由辊上的PET膜形成。
使用常规等离子体粘结工艺或使用温度稳定胶将模板层3和背衬层4粘结在一起以形成载体2，如图1b所示。图3a中示出了载体2的非限制性示例。
在一些实施方案中，可对背衬层4或模板层3和背衬层4两者进行氧等离子体预处理。在一个非限制性实施方案中，氧等离子体预处理用氧等离子体进行10分钟。
在一些实施方案中，模板层3和背衬层4可在压力和温度下粘结在一起。在一个非限制性实施方案中，粘结使用层压机在5MPa的压力和150℃的温度下进行。
一旦形成了载体2，就将特殊银浆浇注到载体2的开口/孔5中。银浆可包含溶剂。在一个非限制性实施方案中，银浆可为购自美国新泽西州索美塞特市的麦德美爱法-组装解决方案公司(MacDermid Alpha-Assembly Solutions of Somerset,NJ,USA)的
Figure BDA0003321317300000051
浆料。
将具有银浆的载体2在烘箱中干燥以形成即烧结型银膜7的图案，如图1c所示。在一个非限制性实施方案中，将载体2和银浆在130℃下干燥20分钟。干燥步骤可从银浆中去除至少一些溶剂。在完成干燥步骤之后，溶剂的量减少，并且优选的是在即烧结型银膜7中基本上不存在溶剂。然而，溶剂的一些残余物可能残留。
在本公开中，载体2和即烧结型银膜7一起被称为组合的即烧结型银膜和载体1。可将组合的即烧结型银膜和载体1轧制或切割成单独的片材以备工业使用。即烧结型银膜和载体1的组合的非限制性例子在图3b中示出。
在一个非限制性实施方案中，即烧结型银膜7的银膜厚度为约100微米并且厚度在整个图案上是均匀的，如图3c的平坦度轮廓所示。
为了在应用中使用组合的即烧结型银膜和载体1，将图案化的即烧结型银膜7层压到衬底10。衬底10可以是DBC、引线框架、夹片或夹片阵列、晶圆或用于电子器件的组装并且具有金属化表面的任何其他部件。一旦即烧结型银膜7被层压到衬底10，该部件就准备好利用烧结工艺进行组装。
图2a和图2b中示意性地示出了示例性层压工艺。层压可使用层压机进行，如图2a示意性所示。层压机可以包括用于向组合的即烧结型银膜和载体1以及衬底10施加压缩压力的顶部台板11和底部台板12。顶部台板11和底部台板12可被加热至130℃。
石墨片13可插置在上台板11与组合的即烧结型银膜和载体1之间。将组合的即烧结型银膜和载体1定位在衬底10(例如DBC)的顶部上，其中即烧结型银膜7面朝下。在5MPa、或者8MPa的压力下以及在130℃的温度下，在层压机中将即烧结型银膜7从载体2转印到衬底10上，如图2b示意性所示。层压有即烧结型银膜7的所得衬底10(在该示例中为DBC)的非限制性示例示于图4a和图4b中。
然后可通过烧结即烧结型银膜来将部件接合到衬底10，以形成银接点。图5示出了非限制性示例，其中管芯22安装在层压的即烧结型银膜7上，并在烧结压机中在10MPa和250℃下烧结到衬底10上。
工业实用性
图案化的组合的即烧结型银膜和载体1可由具有设计开口5的塑料载体2和浇铸到开口5中的即烧结型银膜层7构成。即烧结型银膜7的图案的布局有利地由待组装的电子器件的设计限定。图案化的即烧结型银膜7以两步骤工艺用于生产。在第一步骤中，通过在3MPa至6MPa的典型压力和130℃至150℃的温度下层压将即烧结型银膜7从载体2转印到衬底10上。所用的典型衬底为陶瓷DBC、引线框架、夹片和具有Si器件或SiC器件的晶片。在第二步骤中，将部件放置到衬底10上，并且在10MPa的典型压力和250℃的温度下烧结组件以形成高度可靠的银接点。有利的是，该工艺非常适用于功率模块、分立部件和各种其他器件的大批量制造。
本公开的组合的即烧结型银膜和载体1可有利地被定位为适配现有的制造设备和工艺，从而实现大批量制造。在一个示例中，即烧结型银膜7可层压至单独的管芯或层压至晶片(之后进行切割)。然后可将层压管芯置于基材上并在施加的热和压力下烧结。管芯与衬底之间的所得接点为金属银，其结构和特性如下所示：
典型的
Figure BDA0003321317300000071
接点
成分：烧结的银粒子
密度：85％至95％
热导率：约200WmK
电导率：约3μΩ.cm
杨氏模量：约20GPa
本公开的组合的即烧结型银膜和载体1可用于多种器件和应用(从用于电气和汽车设备的大面积晶闸管和功率模块到用于移动技术和LED照明的微型分立部件)中的部件的附接。与传统的接合技术相比，该技术可以通过将功率或光输出或可靠性提高5到30倍来提高现有器件的性能。该膜使得能够使用新型高温SiC和GaN半导体以及新的器件设计，其产生用现有技术无法达到的电效率。
本公开的其他方面在以下条款中陈述。
条款：
条款1：一种制备组合的即烧结型银膜和载体的方法，该方法包括以下步骤：
a)形成包括设计开口的载体；
b)将银膜层浇铸到该设计开口中；以及
c)干燥该载体和该银膜层，以形成该组合的即烧结型银膜和载体。
条款2：根据条款1所述的方法，该方法还包括以下步骤：
d)将该组合的即烧结型银膜和载体轧制或切割成准备好供工业使用的单独片材。
条款3：根据条款1或条款2所述的方法，其中该载体包括塑料载体。
条款4：根据前述条款中任一项所述的方法，其中该载体通过永久性地粘结两个塑料膜来形成。
条款5：根据条款4所述的方法，其中使用等离子体粘结工艺粘结该两个塑料膜。
条款6：根据条款4所述的方法，其中使用温度稳定的胶粘结该两个塑料膜。
条款7：根据前述条款中任一项所述的方法，其中该载体包括模版层和背衬层。
条款8：根据条款7所述的方法，其中该模板层限定该设计开口。
条款9：根据条款7或条款8所述的方法，其中该模板层具有100微米至200微米、任选地150微米的厚度。
条款10：根据条款7至9中任一项所述的方法，其中该模板层包括PET膜。
条款11：根据条款7至10中任一项所述的方法，其中该模板层被冲切以产生该设计开口。
条款12：根据条款7至11中任一项所述的方法，其中该设计开口为矩形或正方形。
条款13：根据条款7至12中任一项所述的方法，其中该背衬层被构造用于密封该设计开口的底部。
条款14：根据条款7至13中任一项所述的方法，其中该背衬层具有50微米的厚度。
条款15：根据条款7至14中任一项所述的方法，其中该背衬层包括PET膜。
条款16：根据条款7至15中任一项所述的方法，其中该背衬层用氧等离子体预处理。
条款17：根据条款7至16中任一项所述的方法，其中使用层压机任选地在5MPa的压力和150℃的温度下粘结该模板层和该背衬层。
条款18：根据条款7至17中任一项所述的方法，其中在该步骤b)开始时，该设计开口的顶部打开，用于接收该浇铸的银膜层。
条款19：根据前述条款中任一项所述的方法，其中浇注该银膜层包括浇注银浆。
条款20：根据前述条款中任一项所述的方法，其中该银膜层包含溶剂。
条款21：根据前述条款中任一项所述的方法，其中该干燥该载体和该银膜层以形成该组合的即烧结型银膜和载体在烘箱中进行，任选地在130℃下进行20分钟。
条款22：一种组合的即烧结型银膜和载体，该组合的即烧结型银膜和载体包括具有设计开口的载体和浇铸到该设计开口中的银膜层。
条款23：根据条款22所述的组合的即烧结型银膜和载体，其中该载体包括塑料载体。
条款24：根据条款22或条款23所述的组合的即烧结型银膜和载体，其中该载体包括两个永久性粘结的塑料膜。
条款25：根据条款22至24中任一项所述的组合的即烧结型银膜和载体，其中该载体包括模板层和背衬层。
条款26：根据条款25所述的组合的即烧结型银膜和载体，其中该模板层限定该设计开口。
条款27：根据条款25或条款26所述的组合的即烧结型银膜和载体，其中该模板层具有100微米至200微米、任选地150微米的厚度。
条款28：根据条款25至27中任一项所述的组合的即烧结型银膜和载体，其中该模板层包括PET膜。
条款29：根据条款25至28中任一项所述的组合的即烧结型银膜和载体，其中该设计开口为矩形或正方形。
条款30：根据条款25至29中任一项所述的组合的即烧结型银膜和载体，其中该背衬层密封该设计开口的底部。
条款31：根据条款25至30中任一项所述的组合的即烧结型银膜和载体，其中该背衬层具有50微米的厚度。
条款32：根据条款25至31中任一项所述的组合的即烧结型银膜和载体，其中该背衬层包括PET膜。
条款33：根据条款22至32中任一项所述的组合的即烧结型银膜和载体，其中该银膜层由浇铸银浆形成。
条款34：根据条款22至33中任一项所述的组合的即烧结型银膜和载体，其中该银膜层在浇注时包含溶剂。
条款35：一种将部件组装到衬底的方法，该方法包括以下步骤：
a)将组合的即烧结型银膜和载体定位在该衬底的顶部上，该组合的即烧结型银膜和载体包括具有设计开口的载体和浇铸到该设计开口中的银膜层，使得该银膜层面朝下；
b)通过层压将该银膜层转印到该衬底上；
c)移除该组合的即烧结型银膜和载体的该载体；
d)将该部件放置到该衬底上，使该部件与该转印的银膜层接触以形成组件；以及
e)烧结该组件以在该部件和该衬底之间形成银接点。
条款36：根据条款35所述的方法，其中在该步骤b)中，该层压在3MPa至8MPa、任选地3MPa至6MPa、任选地8MPa的压力和130℃至150℃、任选地130℃的温度下使用层压机。
条款37：根据条款35或条款36所述的方法，其中在该步骤e)中，该烧结在10MPa的压力和250℃的温度下进行。
条款38：根据条款35至37中任一项所述的方法，其中该衬底包括直接键合铜(DBC)、引线框架、夹具或夹具阵列、晶圆或用于电子器件的组装并且具有金属化表面的任何其他部件。
条款39：根据条款35至38中任一项所述的方法，其中该部件包括Si器件或SiC器件和/或管芯。
条款40：根据条款35至39中任一项所述的方法，其中该组合的即烧结型银膜和载体如条款22至34中任一项所定义。
条款41：一种通过烧结的银接点接合在一起的部件和衬底的组件，该组件可通过根据条款35至40中任一项所述的方法获得。
应当理解，本公开的附图和描述中的至少一些已被简化以将重点放在与清楚地理解本公开相关的元件，同时为了清楚起见也可能需要消除本领域的读者将会知道的其他元件。因为此类元件是本领域的读者所熟知的，并且因为它们不一定有利于更好地理解本公开，所以本文不提供对此类元件的描述。

Claims (20)

1.一种制备组合的即烧结型银膜和载体的方法，所述方法包括以下步骤：
a)形成包括设计开口的载体；
b)将银膜层浇铸到所述设计开口中；以及
c)干燥所述载体和所述银膜层，以形成所述组合的即烧结型银膜和载体。
2.根据权利要求1所述的方法，所述方法还包括以下步骤：
d)将所述组合的即烧结型银膜和载体轧制或切割成准备好供工业使用的单独片材。
3.根据权利要求1或权利要求2所述的方法，其中所述载体通过永久性地粘结两个塑料膜来形成。
4.根据前述权利要求中任一项所述的方法，其中所述载体包括模版层和背衬层。
5.根据权利要求4所述的方法，其中所述模板层限定所述设计开口。
6.根据权利要求4或权利要求5所述的方法，其中所述背衬层被构造用于密封所述设计开口的底部。
7.根据权利要求4至6中任一项所述的方法，其中在所述步骤b)开始时，所述设计开口的顶部打开，用于接收浇铸的银膜层。
8.根据前述权利要求中任一项所述的方法，其中浇注所述银膜层包括浇注银浆。
9.一种组合的即烧结型银膜和载体，所述组合的即烧结型银膜和载体包括具有设计开口的载体和浇铸到所述设计开口中的银膜层。
10.根据权利要求9所述的组合的即烧结型银膜和载体，其中所述载体包括两个永久性粘结的塑料膜。
11.根据权利要求9或权利要求10所述的组合的即烧结型银膜和载体，其中所述载体包括模版层和背衬层。
12.根据权利要求11所述的组合的即烧结型银膜和载体，其中所述模板层限定所述设计开口。
13.根据权利要求11或权利要求12所述的组合的即烧结型银膜和载体，其中所述模板层具有100微米至200微米、任选地150微米的厚度。
14.一种将部件组装到衬底的方法，所述方法包括以下步骤：
a)将组合的即烧结型银膜和载体定位在所述衬底的顶部上，所述组合的即烧结型银膜和载体包括具有设计开口的载体和浇铸到所述设计开口中的银膜层，使得所述银膜层面朝下；
b)通过层压将所述银膜层转印到所述衬底上；
c)移除所述组合的即烧结型银膜和载体的所述载体；
d)将所述部件放置到所述衬底上，使所述部件与所述转印的银膜层接触以形成组件；以及
e)烧结所述组件以在所述部件和所述衬底之间形成银接点。
15.根据权利要求14所述的方法，其中在所述步骤b)中，所述层压在3MPa至8MPa、任选地3MPa至6MPa、任选地8MPa的压力和130℃至150℃、任选地130℃的温度下使用层压机。
16.根据权利要求14或权利要求15所述的方法，其中在所述步骤e)中，所述烧结在10MPa的压力和250℃的温度下进行。
17.根据权利要求14至16中任一项所述的方法，其中所述衬底包括直接键合铜(DBC)、引线框架、夹具或夹具阵列、晶圆或用于电子器件的组装并且具有金属化表面的任何其他部件。
18.根据权利要求14至17中任一项所述的方法，其中所述部件包括Si器件或SiC器件和/或管芯。
19.根据权利要求14至18中任一项所述的方法，其中所述组合的即烧结型银膜和载体如权利要求9至13中任一项所定义。
20.一种通过烧结的银接点接合在一起的部件和衬底的组件，所述组件可通过根据权利要求14至19中任一项所述的方法获得。
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