CN113140465A - 使用银烧结制造的直接接合铜衬底 - Google Patents

使用银烧结制造的直接接合铜衬底 Download PDF

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CN113140465A
CN113140465A CN202011543218.3A CN202011543218A CN113140465A CN 113140465 A CN113140465 A CN 113140465A CN 202011543218 A CN202011543218 A CN 202011543218A CN 113140465 A CN113140465 A CN 113140465A
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ceramic sheet
sheet
leadframe
lead frame
sintering
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E·N·M·托伦蒂诺
S·克里南
F·J·卡尔尼
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Semiconductor Components Industries LLC
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Semiconductor Components Industries LLC
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Abstract

本发明题为“使用银烧结制造的直接接合铜衬底”。本发明公开了一种直接接合铜(DBC)衬底，该DBC衬底包括：陶瓷片；第一引线框，该第一引线框设置在陶瓷片的第一侧上；第二引线框，该第二引线框设置在陶瓷片的第二侧上；和烧结接合部，该烧结接合部位于第一引线框与陶瓷片之间。陶瓷片是氧化铝片、氮化铝片、氮化硅片或氮化硼片中的至少一者。陶瓷片的表面被金属化，并且第一引线框被设置在陶瓷片的经金属化的表面上。第一引线框是导电金属迹线，并且第二引线框是导电金属迹线、固体金属片材、金属箔或由氮化硼、石墨或碳制成的导电片材中的一者。

Description

使用银烧结制造的直接接合铜衬底
相关申请
本申请要求于2020年1月16日提交的美国专利申请号16/744,378的优先权和权益，该专利申请据此全文以引用方式并入本文。
技术领域
本说明书涉及用于封装功率器件的直接接合铜衬底。
背景技术
可使用先进的硅技术来制造现代高功率器件(例如，硅功率器件，诸如绝缘栅双极晶体管(IGBT)、快速恢复二极管(FRD)等)以满足高功率要求。衬底在功率电子器件中的作用是提供器件之间的互连以形成电路(如印刷电路板一样)，并且冷却部件。高功率器件(例如，IGBT、FRD等)可封装在单侧冷却(SSC)功率模块或双侧冷却(DSC)功率模块中。直接接合铜(DBC)衬底是电子电路板，功率器件在这些电子电路板上安装在SSC功率模块和DSC功率模块中。DBC衬底因其有助于散热的非常好的热导性而常用。DBC衬底由陶瓷片(ceramictile)(例如，氧化铝)以及通过高温熔覆工艺接合到衬底的一侧或两侧的铜片材(sheet)构成。随着对功率模块的性能的需求日益增长，DBC衬底本身的完整性和可靠性已变得重要。现在在传统DBC制造工艺期间常见的内部缺陷(陶瓷-铜界面空隙、裂纹等)对于功率模块的良好性能而言现在可能是无法接受的。
发明内容
一种直接接合铜(DBC)衬底包括：陶瓷片；第一引线框，该第一引线框设置在陶瓷片的第一侧上；第二引线框，该第二引线框设置在陶瓷片的第二侧上；和烧结接合部，该烧结接合部位于第一引线框与陶瓷片之间。
在一般方面，一种方法包括：将烧结前体材料层施加到陶瓷片的第一表面和第二表面中的每一者；以及通过将第一引线框耦接在陶瓷片的第一表面上的烧结前体材料层上并将第二引线框耦接在陶瓷片的第二表面上的烧结前体材料层的第二表面上，使得陶瓷片被设置在第一引线框与第二引线框之间，从而组装直接接合铜(DBC)衬底的前体组件。该方法还包括将第一引线框和第二引线框烧结接合到陶瓷片以形成烧结接合的DBC衬底。
在一个方面，将第一引线框和第二引线框烧结接合到陶瓷片以形成烧结接合的DBC衬底包括以小于500℃的温度和小于100MPa的压力将烧结热处理施加到前体组件。
在另一方面，施加烧结前体材料层包括使陶瓷片的第一表面金属化，以及将烧结前体材料层施加到陶瓷片的经金属化的第一表面。
一个或多个实施方式的细节在附随附图和以下描述中阐明。其他特征将从说明书和附图中以及从权利要求书中显而易见。
附图说明
图1A是使用低温烧结工艺制造的示例性DBC衬底的剖视图的图示。
图1B是图1A的DBC衬底的单独部件的透视图的图示。
图2是用于制造DBC衬底的示例性方法的流程图图示。
图3是可通过图2的方法组装的DBC衬底的示例性前体组件的图示。
图4是用于DBC衬底的前体组件的热和压力处理的示例性加热的压制夹具的图示。
图5是DBC衬底的示例性前体组件的图示。
具体实施方式
本文公开了直接接合铜(DBC)衬底以及用于制造DBC衬底的方法。DBC衬底可旨在用于涉及例如高功率器件(例如，硅功率器件，诸如绝缘栅双极晶体管(IGBT)、快速恢复二极管(FRD)等)的电子电路中。高功率器件可附接到DBC衬底并且封装在例如单侧冷却(SSC)功率模块或双侧冷却(DSC)功率模块中。DBC衬底可包括引线框，即，薄层金属框，该引线框通常使用高温接合工艺(例如，以大于1000℃的温度铜熔覆)接合到陶瓷衬底(例如，氧化铝片)。
用于制造本文所述的DBC衬底的方法涉及至少使用接合工艺(例如，烧结)以低温烧结接合引线框、烧结材料层和陶瓷片的组合以避免缺陷(例如，陶瓷-铜界面空隙、裂纹等)，该缺陷可由引线框与陶瓷片的高温直接接合(例如，以大于1000℃的温度铜熔覆)引起。
根据本公开的原理，在示例性DBC衬底中，引线框使用低温烧结工艺经由烧结材料层(例如，Ag材料层)烧结接合到陶瓷片(例如，氧化铝(Al2O3)、氮化铝(AlN)、氮化硼(BN)、氮化硅(SN)等)。低温烧结工艺可例如涉及小于约几百摄氏度(例如，500℃)的烧结温度。
图1A以剖视图示出了使用低温烧结工艺制造的示例性DBC衬底。DBC衬底100包括陶瓷片110、第一引线框120和第二引线框130。陶瓷片110可由导热电绝缘材料(例如Al2O3、AlN、BN、SN等)制成。第一引线框120和第二引线框130可由导电金属或金属材料(例如，铜)制成。第一引线框120通过例如烧结接合部142烧结接合到陶瓷片的第一侧111。第二引线框130通过例如烧结接合部152烧结接合到陶瓷片的第二侧112。烧结接合部142和烧结接合部152可由烧结材料(例如，金(Au)、银(Ag)、铜(Cu)或它们的任何混合物等)制成，该烧结材料可通过例如以比DBC制造的传统铜熔覆工艺中所涉及的温度(例如，1000℃和更高)低的温度(例如，500℃或更低)的烧结工艺将引线框120和引线框130接合到陶瓷片。
在示例性实施方式中，陶瓷片110可被金属化，即，具有覆盖有中间金属或金属层(例如，层114)的表面，该中间金属或金属层促进陶瓷片110与设置在陶瓷片110的表面上的烧结材料(例如，烧结接合部142和烧结接合部152)的接合。在示例性实施方式中，中间金属或金属层可由合金(例如，钛镍银(TiNiAg)合金)制成。
在示例性实施方式中，陶瓷片110可以不被金属化，即，不被中间金属或金属层(例如，层114)覆盖，并且烧结材料可以直接设置在陶瓷片110的表面上以在陶瓷片110与引线框(例如，第一引线框120和第二引线框130)之间形成烧结接合部(例如，烧结接合部142和烧结接合部152)。
图1B例如以透视图示出了在制造期间DBC衬底100的单独部件(例如，陶瓷片110、引线框120和引线框130)。第一引线框120可为图案化导电金属或金属片材(例如，迹线)，一个或多个功率半导体器件(未示出)可在器件封装件(例如，SSC或DSC功率模块)中(例如，使用焊料或导电环氧树脂)附接到该图案化导电金属或金属片材。在示例性实施方式中，引线框120可被图案化(例如，迹线122)以提供与一个或多个附接的功率半导体器件的互连以及在一个或多个附接的功率半导体器件之间的互连。将薄金属或金属层114(例如，TiNiAg)施加到陶瓷片110的第一侧111以促进陶瓷片110与引线框120之间的烧结。当将引线框120放置在陶瓷片110上时，薄金属或金属层114可具有与迹线122的图案匹配的图案。
在示例性实施方式中，引线框130可例如为金属或金属板(例如，铜板)。引线框130可为实心金属或金属板，或如引线框120一样，可为图案化板(即，迹线)。
在示例性实施方式中，引线框120可例如为铜迹线，并且引线框130可为金属箔(例如，铜箔)。
在示例性实施方式中，引线框120可例如为铜迹线，并且引线框130可为由石墨或碳制成的导电片材。
在示例性实施方式中，引线框120可例如为铜迹线，并且引线框130可为由导热材料(例如，导热材料诸如超纯BN)制成的导电片材。
在示例性实施方式中，引线框120的厚度T1可例如在约0.05毫米与约3.0毫米之间，并且引线框130的类似厚度T2可例如在约0.05毫米与约3.0毫米之间。
在示例性实施方式中，引线框120和引线框130可具有相异厚度。例如，引线框120的厚度T1可在约0.05毫米与约3.0毫米之间，并且引线框130的相异厚度T2可在约0.1毫米与约5.0毫米之间。
图2示出了根据本公开的原理的用于使用低温烧结工艺制造DBC衬底(例如，DBC衬底100)的示例性方法200。低温烧结工艺可涉及以小于约500℃的温度烧结。
DBC衬底部件可包括陶瓷片、第一引线框和第二引线框。陶瓷片可为由例如导热电绝缘材料诸如氧化铝(Al2O3)、BN、SN或AlN制成的片。第一引线框可例如为具有迹线图案的铜片材。迹线图案可例如从例如实心金属片材(例如，铜片材)压印、微机械加工、精密冲压或切割(例如，激光切割、光蚀刻)。第二引线框可例如为实心金属片材(例如，铜片材)。在一些实施方式中，第二引线框也可为具有迹线图案的铜片材。
方法200可包括使陶瓷片的一个或多个表面(例如，陶瓷片的一侧上和陶瓷片的第二侧上的顶表面)金属化(210)，以及将烧结前体材料层施加到陶瓷片的第一表面和第二表面中的每一者(220)。在示例性实施方式中，第一表面和第二表面可为陶瓷片的金属化表面。在另一个实施方式中，第一表面和第二表面可为陶瓷片的未金属化表面。陶瓷片的第一表面和第二表面是否应被金属化可取决于在方法200中在220处使用的烧结前体材料层的性质。
烧结前体材料可例如包括可接合到引线框和陶瓷片(例如，陶瓷片110)的任何类型的金属或金属颗粒。烧结前体材料可例如为Ag基烧结材料，以用于制作Ag烧结接合部。烧结前体材料可例如为Cu基烧结材料，以用于制作Cu烧结接合部。
在方法200的示例性实施方式中，金属化表面210可包括在陶瓷片的表面上沉积(例如，溅射、蒸镀、化学镀、电镀等)中间金属或金属合金层(例如，TiNiAg)。中间金属或金属合金(例如，TiNiAg)可促进陶瓷片与烧结前体材料的烧结接合。
施加烧结前体材料220的层可包括使用润湿状态应用技术或干燥状态应用技术施加烧结前体材料(例如，Au颗粒、Ag颗粒、Cu颗粒)。润湿状态应用技术可例如包括丝网印刷或模版印刷、刮涂、喷涂、浸渍和细针分配技术。
当采用润湿状态应用技术时，烧结前体材料可例如为金属颗粒在溶剂和/或表面活性剂中的悬浮液，该悬浮液有利于润湿状态应用。在示例性实施方式中，润湿状态涂层前体材料可包含与粘结剂(例如，环氧树脂)、分散剂和稀释剂或液体载体结合的金属颗粒(例如，Au颗粒、Ag颗粒或Cu颗粒、或它们的混合物)。
干燥状态应用技术可涉及膜转移工艺，以将烧结前体材料作为干膜施加到适当的陶瓷片表面。干膜可例如通过将润湿状态烧结前体材料初始地沉积(例如，丝网印刷或以其他方式分配)到临时衬底或载体诸如聚合物(例如，聚对苯二甲酸乙二醇酯)带背衬上来制备。可将烧结前体材料以润湿的可流动状态施加到临时衬底或载体，然后加热或以其他方式干燥，以产生可转移到陶瓷片的适当表面的干膜。
方法200还可包括：通过将第一引线框耦接到施加在陶瓷片的第一表面上的烧结前体材料层并将第二引线框耦接到施加在陶瓷片的第二表面上的烧结前体材料层，使得陶瓷片被设置在第一引线框与第二引线框之间，从而组装DBC衬底的前体组件(230)；以及将第一引线框和第二引线框烧结接合到陶瓷片以获得烧结接合的DBC衬底(240)。
图3示出了可通过方法200组装(在阶段240处)的示例性前体组件300。前体组件300可包括陶瓷片、一个或多个引线框以及可以低温使用接合工艺(例如，烧结)进行烧结接合的一个或多个烧结材料层的组合。例如，前体组件300可包括夹置在第一引线框120与第二引线框130之间的陶瓷片110。在前体组件300中，陶瓷片110的一个或多个表面可例如通过中间金属或金属合金(例如，TiNiAg)涂层114来金属化。另外，烧结前体材料层143可插置在第一引线框120与陶瓷片110之间，并且烧结前体材料层153可插置在第二引线框130与陶瓷片110之间。
在方法200中，将第一引线框和第二引线框烧结接合到陶瓷片以获得烧结接合的DBC衬底250可包括将压力和热量施加到前体组件300，例如加热的压制夹具中的前体组件。
图4示出了示例性加热的压制夹具400，该加热的压制夹具可用于前体组件300将第一引线框和第二引线框烧结接合到陶瓷片的热和压力处理。加热的压制夹具400可包括可移动压力机420和用于保持前体组件300的加热的压力室410，该可移动压力机将压力(例如，如图4中的箭头42所示)施加到保持在压力室中的前体组件300。
在示例性实施方式中，前体组件300中的陶瓷片110可涂覆有TiNiAg涂层114。另外，烧结前体材料层143和烧结前体材料层153可为Ag基烧结材料。加热的压制夹具400中的前体组件300在低温烧结工艺中的热和压力处理可导致Ag颗粒在TiNiAg涂层114与烧结前体材料层(例如，烧结前体材料层143和烧结前体材料层153)之间的相互扩散或相互混合以形成烧结接合部142和烧结接合部152(分别位于陶瓷片110与引线框120和引线框130之间)。在图4中，出于视觉例证的目的，Ag颗粒在TiNiAg涂层与烧结前体材料层之间的相互扩散或相互混合由TiNiAg涂层114与烧结前体材料层(例如，图3的烧结前体材料层143和烧结前体材料层153)之间的虚线边界线160示出。
在示例性实施方式中，前体组件300进行Ag烧结的热和压力处理可利用在约200℃与300℃之间的烧结温度、以及在约10MPa与约25MPa之间的压力。
在其中烧结前体材料为Cu基烧结材料的示例性实施方式中，前体组件300进行Cu烧结的热和压力处理可利用在约200℃与约500℃之间的烧结温度、以及在约10MPa与约50MPa之间的压力。在示例性实施方式中，用于Cu烧结的压力可取决于前体组件300中的Cu基烧结材料(例如，层143和层153)的厚度。较厚的Cu基烧结材料层可能需要以比较薄的Cu基烧结材料层高的压力烧结。
在其中烧结前体材料为基于Ag和Cu混合物的烧结材料的示例性实施方式中，前体组件300进行Ag和Cu混合物烧结的热和压力处理可利用在约200℃与500℃之间的烧结温度、以及在约5MPa与约100MPa之间的压力。用于Ag和Cu混合物烧结的压力可取决于前体组件300中的Ag和Cu混合物烧结前体材料(例如，层143和层153)的厚度。较厚的前体材料层可能需要以比较薄的前体材料层高的压力烧结。
在示例性实施方式中，前体组件300中的烧结前体材料(例如，层143和层153)可为无压烧结材料。在此类实施方式中，前体组件300的热和压力处理可在无压力下(或在以例如将部件保持在夹具400中的适当位置的小压力下)将烧结温度用于无压烧结材料。
方法200的低温烧结工艺可使得能够以DBC部件的最小翘曲或不翘曲来制造大型DBC衬底(例如，一侧大于四英寸)。通过方法200进行低温烧结接合的示例性DBC衬底可具有约5”x7”至约14”x14”范围内的矩形面板尺寸。
在示例性实施方式中，用于将引线框烧结接合到陶瓷片的烧结前体材料(例如，图3的烧结前体材料层143和烧结前体材料层153)中的一者或多者可由低温附接材料(例如，铅/无铅焊料、过渡液相焊料等)代替。
在示例性实施方式中，在将引线框低温烧结接合到陶瓷片之前，可将一个或多个半导体器件管芯附接到DBC衬底的引线框。半导体器件管芯(例如，IGBT、FRD等)可使用例如焊料或导电粘合剂或环氧树脂附接(例如，附接到引线框120)。
图5示出例如DBC前体组件500，该DBC前体组件可通过方法200(在阶段240处)与附接到引线框120的半导体器件管芯510(例如，IGBT)和半导体器件管芯520(例如，FRD)组装在一起。前体组件500可包括夹置在第一引线框120与第二引线框130之间的陶瓷片110。
在前体组件500中，如在前体组件300中一样，陶瓷片110的一个或多个表面可例如通过中间金属或金属合金(例如，TiNiAg)涂层114来金属化。另外，烧结前体材料层143可插置在第一引线框120与陶瓷片110之间，并且烧结前体材料层153可插置在第二引线框130与陶瓷片110之间。
如前体组件300一样，前体组件500可经受低温和压力烧结工艺(例如，在加热的压制夹具400中)以将引线框120和引线框130烧结接合到陶瓷片110。
一种方法包括：将烧结前体材料层施加到陶瓷片的第一表面和第二表面中的每一者；通过将第一引线框耦接在陶瓷片的第一表面上的烧结前体材料层上并将第二引线框耦接在陶瓷片的第二表面上的烧结前体材料层的第二表面上，使得陶瓷片被设置在第一引线框与第二引线框之间，从而组装直接接合铜(DBC)衬底的前体组件；以及将第一引线框和第二引线框烧结接合到陶瓷片以形成烧结接合的DBC衬底。
在该方法中，将第一引线框和第二引线框烧结接合到陶瓷片以形成烧结接合的DBC衬底包括以小于500℃的温度将烧结热处理施加到前体组件。
烧结接合以小于500℃的温度和小于100MPa的压力将烧结热和压力处理施加到前体组件。
在该方法中，施加烧结前体材料层包括使陶瓷片的第一表面金属化，以及将烧结前体材料层施加到陶瓷片的经金属化的第一表面。
在该方法中，陶瓷片是氧化铝片、氮化铝片、氮化硅片或氮化硼片中的至少一者，第一引线框包括导电金属迹线，并且第二引线框包括导电金属迹线、固体金属片材或金属箔中的一者。在示例性实施方式中，第二引线框包括由氮化硼、石墨或碳制成的导电片材。
在该方法中，施加烧结前体材料层包括将银基烧结材料、铜基烧结材料、金基烧结材料或它们的组合中的一者施加到陶瓷片的至少一个表面。
在该方法中，组装直接接合铜(DBC)衬底的前体组件包括将至少一个半导体器件管芯耦接到第一引线框。在示例性实施方式中，该方法还包括在进行烧结接合以形成烧结接合的DBC衬底之前将至少一个半导体器件管芯耦接到第一引线框。
在该方法中，第一引线框或第二引线框中的至少一者的厚度在约0.05毫米与约3.0毫米之间。在示例性实施方式中，第一引线框的厚度在约0.05毫米与约3.0毫米之间，并且第二引线框的相异厚度在约0.1毫米与约5.0毫米之间。
应当理解，在前述描述中，当元件诸如层、区域、衬底或部件被提及为在另一个元件上，连接到另一个元件，电连接到另一个元件，耦接到另一个元件，或电耦接到另一个元件时，元件可以直接地在另一个元件上，连接到或耦接到另一个元件上，或者可以存在一个或多个中间元件。相反，当元件被提及直接在另一个元件或层上、直接连接到另一个元件或层、或直接耦接到另一个元件或层时，不存在中间元件或层。虽然在整个具体实施方式中可能不会使用术语直接在…上、直接连接到…、或直接耦接到…，但是被示为直接在元件上、直接连接或直接耦接的元件能以此类方式提及。本申请的权利要求书(如果存在的话)可被修订以叙述在说明书中描述或者在附图中示出的示例性关系。
如在本说明书和权利要求书中所使用的，除非根据上下文明确地指出特定情况，否则单数形式可包括复数形式。除了附图中所示的取向之外，空间相对术语(例如，在…上方、在…上面、在…之上、在…下方、在…下面、在…之下、在…之以下等)旨在涵盖器件在使用或操作中的不同取向。在一些实施方式中，在…上面和在…下面的相对术语可分别包括竖直地在…上面和竖直地在…下面。在一些实施方式中，术语邻近能包括横向邻近或水平邻近。
一些实施方式可使用各种半导体处理和/或封装技术来实现。一些实施方式可使用与半导体衬底相关联的各种类型的半导体处理技术来实现，该半导体衬底包含但不限于，例如硅(Si)、砷化镓(GaAs)、氮化镓(GaN)、碳化硅(SiC)等。
虽然所描述的实施方式的某些特征已经如本文所述进行了说明，但是本领域技术人员现在将想到许多修改形式、替代形式、变化形式和等同形式。因此，应当理解，所附权利要求书旨在涵盖落入实施方式的范围内的所有此类修改形式和变化形式。应当理解，这些修改形式和变化形式仅仅以举例而非限制的方式呈现，并且可以进行形式和细节上的各种变化。除了相互排斥的组合以外，本文所述的装置和/或方法的任何部分可以任意组合进行组合。本文所述的实施方式可包括所描述的不同实施方式的功能、部件和/或特征的各种组合和/或子组合。

Claims (10)

1.一种方法，包括：
将烧结前体材料层施加到陶瓷片的第一表面和第二表面中的每一者；
通过将第一引线框耦接在所述陶瓷片的第一表面上的所述烧结前体材料层上并将第二引线框耦接在所述陶瓷片的第二表面上的所述烧结前体材料层的第二表面上，使得所述陶瓷片被设置在所述第一引线框与所述第二引线框之间，从而组装直接接合铜(DBC)衬底的前体组件；以及
将所述第一引线框和所述第二引线框烧结接合到所述陶瓷片以形成烧结接合的直接接合铜衬底。
2.根据权利要求1所述的方法，其中所述将所述第一引线框和所述第二引线框烧结接合到所述陶瓷片以形成所述烧结接合的直接接合铜衬底包括：以小于500℃的温度和小于100MPa的压力将烧结热和压力处理施加到所述前体组件。
3.一种直接接合铜(DBC)衬底，包括：
陶瓷片；
第一引线框，所述第一引线框设置在所述陶瓷片的第一侧上；
第二引线框，所述第二引线框设置在所述陶瓷片的第二侧上；
以及
所述第一引线框与所述陶瓷片之间的烧结接合部。
4.根据权利要求3所述的直接接合铜衬底，其中所述陶瓷片的表面被金属化，并且所述第一引线框被设置在所述陶瓷片的经金属化的表面上。
5.根据权利要求3所述的直接接合铜衬底，其中所述陶瓷片是氧化铝片、氮化铝片、氮化硅片或氮化硼片中的至少一者。
6.根据权利要求3所述的直接接合铜衬底，其中所述第一引线框是导电金属迹线。
7.根据权利要求3所述的直接接合铜衬底，其中所述第二引线框是导电金属迹线、固体金属片材、金属箔或由氮化硼、石墨或碳制成的导电片材中的一者。
8.根据权利要求3所述的直接接合铜衬底，其中所述烧结接合部包括银基烧结材料、铜基烧结材料、金基烧结材料或它们的组合。
9.根据权利要求3所述的直接接合铜衬底，其中所述第一引线框或所述第二引线框中的至少一者的厚度在约0.05毫米与约3.0毫米之间。
10.根据权利要求3所述的直接接合铜衬底，其中所述第一引线框具有在约0.05毫米与约3.0毫米之间的厚度，并且所述第二引线框具有相异的厚度，在约0.1毫米与约5.0毫米之间。
CN202011543218.3A 2020-01-16 2020-12-24 使用银烧结制造的直接接合铜衬底 Pending CN113140465A (zh)

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