KR102424479B1 - 플라즈마 에칭 방법 및 플라즈마 에칭 장치 - Google Patents

플라즈마 에칭 방법 및 플라즈마 에칭 장치 Download PDF

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Publication number
KR102424479B1
KR102424479B1 KR1020160027505A KR20160027505A KR102424479B1 KR 102424479 B1 KR102424479 B1 KR 102424479B1 KR 1020160027505 A KR1020160027505 A KR 1020160027505A KR 20160027505 A KR20160027505 A KR 20160027505A KR 102424479 B1 KR102424479 B1 KR 102424479B1
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South Korea
Prior art keywords
plasma
gas
etching
film
underlayer film
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Korean (ko)
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KR20160110153A (ko
Inventor
슌이치 미카미
šœ이치 미카미
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도쿄엘렉트론가부시키가이샤
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    • H01L21/3065—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H01L21/0274—
    • H01L21/0276—
    • H01L21/31138—
    • H01L21/32136—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating

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  • Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020160027505A 2015-03-09 2016-03-08 플라즈마 에칭 방법 및 플라즈마 에칭 장치 Active KR102424479B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015046136A JP6411246B2 (ja) 2015-03-09 2015-03-09 プラズマエッチング方法およびプラズマエッチング装置
JPJP-P-2015-046136 2015-03-09

Publications (2)

Publication Number Publication Date
KR20160110153A KR20160110153A (ko) 2016-09-21
KR102424479B1 true KR102424479B1 (ko) 2022-07-22

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KR1020160027505A Active KR102424479B1 (ko) 2015-03-09 2016-03-08 플라즈마 에칭 방법 및 플라즈마 에칭 장치

Country Status (3)

Country Link
US (1) US10283368B2 (https=)
JP (1) JP6411246B2 (https=)
KR (1) KR102424479B1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11372332B2 (en) * 2018-10-26 2022-06-28 Tokyo Electron Limited Plasma treatment method to improve photo resist roughness and remove photo resist scum
US20230408926A1 (en) * 2020-11-09 2023-12-21 The Board Of Trustees Of The University Of Illinois Plasma-activated liquids
WO2023200027A1 (ko) 2022-04-14 2023-10-19 주식회사 올도완 포토레지스트 파티클 제거방법
TW202439440A (zh) * 2023-02-15 2024-10-01 日商東京威力科創股份有限公司 電漿處理方法及電漿處理裝置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000232107A (ja) * 1999-02-12 2000-08-22 Mitsubishi Electric Corp 半導体装置のパターン形成方法
JP2003007690A (ja) 2001-06-27 2003-01-10 Seiko Epson Corp エッチング方法及び半導体装置の製造方法
US20060068594A1 (en) 2004-09-28 2006-03-30 Texas Instruments, Inc. Method for line etch roughness (LER) reduction for low-k interconnect damascene trench etching
US7759239B1 (en) 2009-05-05 2010-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method of reducing a critical dimension of a semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09129597A (ja) * 1995-10-27 1997-05-16 Hitachi Ltd 半導体集積回路装置の製造方法およびドライエッチング装置
JPH1092824A (ja) * 1996-09-19 1998-04-10 Sony Corp 半導体装置の製造方法
US6583065B1 (en) * 1999-08-03 2003-06-24 Applied Materials Inc. Sidewall polymer forming gas additives for etching processes
JP2003140352A (ja) * 2001-11-05 2003-05-14 Toshiba Corp 反射防止膜、これを用いたレジストパターン形成方法および半導体装置の製造方法
US7135410B2 (en) * 2003-09-26 2006-11-14 Lam Research Corporation Etch with ramping
JP2006128543A (ja) * 2004-11-01 2006-05-18 Nec Electronics Corp 電子デバイスの製造方法
JP2008016084A (ja) * 2006-07-03 2008-01-24 Toshiba Corp 磁気記録媒体の製造方法
JP2014017316A (ja) * 2012-07-06 2014-01-30 Tokyo Electron Ltd 現像処理装置及び現像処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000232107A (ja) * 1999-02-12 2000-08-22 Mitsubishi Electric Corp 半導体装置のパターン形成方法
JP2003007690A (ja) 2001-06-27 2003-01-10 Seiko Epson Corp エッチング方法及び半導体装置の製造方法
US20060068594A1 (en) 2004-09-28 2006-03-30 Texas Instruments, Inc. Method for line etch roughness (LER) reduction for low-k interconnect damascene trench etching
US7759239B1 (en) 2009-05-05 2010-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method of reducing a critical dimension of a semiconductor device

Also Published As

Publication number Publication date
US20160268140A1 (en) 2016-09-15
JP6411246B2 (ja) 2018-10-24
KR20160110153A (ko) 2016-09-21
US10283368B2 (en) 2019-05-07
JP2016167509A (ja) 2016-09-15

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