KR102407734B1 - 가스 분배 및 개별적인 펌핑을 갖는 배치 경화 챔버 - Google Patents

가스 분배 및 개별적인 펌핑을 갖는 배치 경화 챔버 Download PDF

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KR102407734B1
KR102407734B1 KR1020167034905A KR20167034905A KR102407734B1 KR 102407734 B1 KR102407734 B1 KR 102407734B1 KR 1020167034905 A KR1020167034905 A KR 1020167034905A KR 20167034905 A KR20167034905 A KR 20167034905A KR 102407734 B1 KR102407734 B1 KR 102407734B1
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substrate
loading opening
sub
chamber
processing
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KR20170007411A (ko
Inventor
아디브 칸
산카르 벤카타라만
제이 디. 3세 핀슨
장규 양
니틴 크리쉬나라오 잉글
퀴웨이 리앙
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어플라이드 머티어리얼스, 인코포레이티드
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Priority to KR1020227019130A priority Critical patent/KR102500194B1/ko
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    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H01L21/02282—
    • H01L21/67126—
    • H01L21/6719—
    • H01L21/67742—
    • H01L21/68742—
    • H01L21/68785—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/34—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H10P72/3411—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Robotics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Polyurethanes Or Polyureas (AREA)
KR1020167034905A 2014-05-14 2015-04-21 가스 분배 및 개별적인 펌핑을 갖는 배치 경화 챔버 Active KR102407734B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020227019130A KR102500194B1 (ko) 2014-05-14 2015-04-21 가스 분배 및 개별적인 펌핑을 갖는 배치 경화 챔버

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461996817P 2014-05-14 2014-05-14
US61/996,817 2014-05-14
US14/577,828 2014-12-19
US14/577,828 US10113236B2 (en) 2014-05-14 2014-12-19 Batch curing chamber with gas distribution and individual pumping
PCT/US2015/026937 WO2015175175A1 (en) 2014-05-14 2015-04-21 Batch curing chamber with gas distribution and individual pumping

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020227019130A Division KR102500194B1 (ko) 2014-05-14 2015-04-21 가스 분배 및 개별적인 펌핑을 갖는 배치 경화 챔버

Publications (2)

Publication Number Publication Date
KR20170007411A KR20170007411A (ko) 2017-01-18
KR102407734B1 true KR102407734B1 (ko) 2022-06-10

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KR1020167034905A Active KR102407734B1 (ko) 2014-05-14 2015-04-21 가스 분배 및 개별적인 펌핑을 갖는 배치 경화 챔버
KR1020237004775A Active KR102588544B1 (ko) 2014-05-14 2015-04-21 가스 분배 및 개별적인 펌핑을 갖는 배치 경화 챔버
KR1020227019130A Active KR102500194B1 (ko) 2014-05-14 2015-04-21 가스 분배 및 개별적인 펌핑을 갖는 배치 경화 챔버

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KR1020227019130A Active KR102500194B1 (ko) 2014-05-14 2015-04-21 가스 분배 및 개별적인 펌핑을 갖는 배치 경화 챔버

Country Status (5)

Country Link
US (3) US10113236B2 (enExample)
JP (2) JP6592012B2 (enExample)
KR (3) KR102407734B1 (enExample)
CN (3) CN106463362B (enExample)
WO (1) WO2015175175A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9226407B2 (en) * 2002-07-01 2015-12-29 Semigear Inc Reflow treating unit and substrate treating apparatus
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11482434B2 (en) 2016-10-18 2022-10-25 Belting E-Town Semiconductor Technology Co., Ltd Systems and methods for workpiece processing
US10840068B2 (en) * 2017-02-15 2020-11-17 Yield Engineering Systems, Inc. Plasma spreading apparatus and method of spreading plasma in process ovens
KR102595053B1 (ko) * 2017-04-17 2023-10-30 도쿄엘렉트론가부시키가이샤 절연막의 성막 방법, 절연막의 성막 장치 및 기판 처리 시스템
JP7168586B2 (ja) * 2017-05-13 2022-11-09 アプライド マテリアルズ インコーポレイテッド 高品質のボイド充填法のための流動性堆積及び高密度プラズマ処理工程サイクル
JP6947914B2 (ja) * 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
US10872762B2 (en) * 2017-11-08 2020-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming silicon oxide layer and semiconductor structure
US11101163B2 (en) * 2018-01-30 2021-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for automated robotic arm sensing
US10734219B2 (en) * 2018-09-26 2020-08-04 Asm Ip Holdings B.V. Plasma film forming method
US20210013069A1 (en) * 2019-07-12 2021-01-14 Applied Materials, Inc. Multi-lid structure for semiconductor processing system
JP7333762B2 (ja) * 2020-02-05 2023-08-25 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US11901222B2 (en) * 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
JP7156332B2 (ja) * 2020-05-21 2022-10-19 株式会社安川電機 搬送装置、搬送方法および搬送システム
KR102749186B1 (ko) * 2020-07-15 2025-01-06 세메스 주식회사 기판 처리 장치
JP7747470B2 (ja) * 2021-09-06 2025-10-01 キヤノントッキ株式会社 成膜装置、基板搬送装置、基板搬送方法及び電子デバイスの製造方法
US12264747B2 (en) 2021-09-28 2025-04-01 Samsung Electronics Co., Ltd. Loadlock apparatus and substrate processing apparatus including the same
US12518979B2 (en) * 2022-07-19 2026-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Exhaust manifold for semiconductor process chamber
US20240112931A1 (en) * 2022-10-03 2024-04-04 Applied Materials, Inc. Cassette structures and related methods for batch processing in epitaxial deposition operations
US20240120220A1 (en) * 2022-10-06 2024-04-11 Applied Materials, Inc. Load lock chambers and related methods and structures for batch cooling or heating
TW202512812A (zh) * 2023-09-07 2025-03-16 聯華電子股份有限公司 矽穿孔結構及其製作方法
US12497693B2 (en) * 2024-03-27 2025-12-16 Applied Materials, Inc. Modular flow chamber kits, processing chambers, and related apparatus and methods applicable for semiconductor manufacturing
CN120291061B (zh) * 2025-06-09 2025-08-26 蓝河科技(绍兴)有限公司 气体分配装置和半导体设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030173347A1 (en) * 2002-03-15 2003-09-18 Guiver Harold Chris Vacuum thermal annealer
US20070209593A1 (en) * 2006-03-07 2007-09-13 Ravinder Aggarwal Semiconductor wafer cooling device
US20090016853A1 (en) * 2007-07-09 2009-01-15 Woo Sik Yoo In-line wafer robotic processing system

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264393A (en) * 1977-10-31 1981-04-28 Motorola, Inc. Reactor apparatus for plasma etching or deposition
US6296735B1 (en) * 1993-05-03 2001-10-02 Unaxis Balzers Aktiengesellschaft Plasma treatment apparatus and method for operation same
CH687987A5 (de) * 1993-05-03 1997-04-15 Balzers Hochvakuum Verfahren zur Erhoehung der Beschichtungsrate in einem Plasmaentladungsraum und Plasmakammer.
JPH07297194A (ja) * 1994-04-25 1995-11-10 Sony Corp マルチチャンバー装置及び半導体装置の製造方法
JP3421483B2 (ja) * 1995-08-25 2003-06-30 株式会社東芝 半導体装置の製造方法
US5879459A (en) * 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US6610150B1 (en) 1999-04-02 2003-08-26 Asml Us, Inc. Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system
JP5021112B2 (ja) 2000-08-11 2012-09-05 キヤノンアネルバ株式会社 真空処理装置
KR100491161B1 (ko) * 2002-11-26 2005-05-24 주식회사 테라세미콘 반도체 제조장치
US7604708B2 (en) * 2003-02-14 2009-10-20 Applied Materials, Inc. Cleaning of native oxide with hydrogen-containing radicals
JP4319434B2 (ja) * 2003-03-11 2009-08-26 東京エレクトロン株式会社 ゲートバルブ及び真空容器
KR20070089197A (ko) 2004-11-22 2007-08-30 어플라이드 머티어리얼스, 인코포레이티드 배치 처리 챔버를 사용한 기판 처리 기기
US20070084408A1 (en) 2005-10-13 2007-04-19 Applied Materials, Inc. Batch processing chamber with diffuser plate and injector assembly
WO2008004278A1 (fr) * 2006-07-04 2008-01-10 Toshiba Mitsubishi-Electric Industrial Systems Corporation Procédé et dispositif de concentration / dilution de gaz spécifique
JP2010047818A (ja) * 2008-08-25 2010-03-04 Toshiba Corp 半導体製造装置および半導体製造方法
KR101458195B1 (ko) 2009-09-25 2014-11-05 주식회사 티지오테크 배치식 에피택셜층 형성장치 및 그 형성방법
US8524004B2 (en) * 2010-06-16 2013-09-03 Applied Materials, Inc. Loadlock batch ozone cure
KR101223489B1 (ko) * 2010-06-30 2013-01-17 삼성디스플레이 주식회사 기판 가공 장치
US9285168B2 (en) 2010-10-05 2016-03-15 Applied Materials, Inc. Module for ozone cure and post-cure moisture treatment
US9076644B2 (en) * 2011-01-18 2015-07-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus, substrate supporter and method of manufacturing semiconductor device
US20120258259A1 (en) * 2011-04-08 2012-10-11 Amit Bansal Apparatus and method for uv treatment, chemical treatment, and deposition
WO2013054652A1 (ja) * 2011-10-11 2013-04-18 株式会社日立国際電気 基板処理装置、基板処理方法、半導体装置の製造方法、および記録媒体
WO2013173999A1 (en) * 2012-05-24 2013-11-28 Acm Research (Shanghai) Inc. Loadlock chamber and method for treating substrates using the same
JP5977274B2 (ja) * 2013-03-21 2016-08-24 東京エレクトロン株式会社 バッチ式縦型基板処理装置および基板保持具
US20150044619A1 (en) * 2013-08-07 2015-02-12 International Business Machines Corporation Carrier for Ultra-Thin Substrates and Method of Use

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030173347A1 (en) * 2002-03-15 2003-09-18 Guiver Harold Chris Vacuum thermal annealer
US20070209593A1 (en) * 2006-03-07 2007-09-13 Ravinder Aggarwal Semiconductor wafer cooling device
US20090016853A1 (en) * 2007-07-09 2009-01-15 Woo Sik Yoo In-line wafer robotic processing system

Also Published As

Publication number Publication date
CN110828346A (zh) 2020-02-21
US20190048470A1 (en) 2019-02-14
US10113236B2 (en) 2018-10-30
JP6592012B2 (ja) 2019-10-16
WO2015175175A1 (en) 2015-11-19
US12203171B2 (en) 2025-01-21
CN110828346B (zh) 2023-10-03
US11408075B2 (en) 2022-08-09
KR20170007411A (ko) 2017-01-18
CN106463362B (zh) 2019-11-26
JP2020036015A (ja) 2020-03-05
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KR20230025035A (ko) 2023-02-21
US20220341042A1 (en) 2022-10-27
US20150329970A1 (en) 2015-11-19
KR102500194B1 (ko) 2023-02-14
CN117198935A (zh) 2023-12-08
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