KR102401025B1 - 에칭 방법 - Google Patents

에칭 방법 Download PDF

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Publication number
KR102401025B1
KR102401025B1 KR1020217009334A KR20217009334A KR102401025B1 KR 102401025 B1 KR102401025 B1 KR 102401025B1 KR 1020217009334 A KR1020217009334 A KR 1020217009334A KR 20217009334 A KR20217009334 A KR 20217009334A KR 102401025 B1 KR102401025 B1 KR 102401025B1
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gas
flow rate
phosphorus
silicon
etching
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KR20210057061A (ko
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다카히로 요코야마
마주 도무라
요시히데 기하라
류타로 스다
다카토시 오루이
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도쿄엘렉트론가부시키가이샤
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Priority claimed from PCT/JP2020/005847 external-priority patent/WO2021090516A1/ja
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    • H01L21/31116—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01L21/02164—
    • H01L21/0217—
    • H01L21/31144—
    • H01L21/32055—
    • H01L21/32136—
    • H01L21/32139—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020217009334A 2019-11-08 2020-11-02 에칭 방법 Active KR102401025B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020227016762A KR102723916B1 (ko) 2019-11-08 2020-11-02 에칭 방법

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JPJP-P-2019-203326 2019-11-08
JP2019203326 2019-11-08
JPPCT/JP2020/005847 2020-02-14
PCT/JP2020/005847 WO2021090516A1 (ja) 2019-11-08 2020-02-14 エッチング方法
JP2020152786 2020-09-11
JPJP-P-2020-152786 2020-09-11
PCT/JP2020/041026 WO2021090798A1 (ja) 2019-11-08 2020-11-02 エッチング方法

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Publications (2)

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KR20210057061A KR20210057061A (ko) 2021-05-20
KR102401025B1 true KR102401025B1 (ko) 2022-05-24

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KR1020247035736A Pending KR20240157785A (ko) 2019-11-08 2020-11-02 에칭 방법
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Country Status (7)

Country Link
US (4) US11551937B2 (https=)
EP (1) EP4050641A4 (https=)
JP (4) JP6990799B2 (https=)
KR (3) KR102401025B1 (https=)
CN (2) CN114175214B (https=)
TW (1) TW202536963A (https=)
WO (1) WO2021090798A1 (https=)

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CN116034454A (zh) * 2021-04-28 2023-04-28 东京毅力科创株式会社 蚀刻方法
JP7767024B2 (ja) * 2021-05-07 2025-11-11 東京エレクトロン株式会社 基板処理方法および基板処理装置
KR102698686B1 (ko) * 2021-06-21 2024-08-23 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
JP7348672B2 (ja) * 2021-12-03 2023-09-21 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
JP7675044B2 (ja) 2022-03-24 2025-05-12 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
CN118872034A (zh) * 2022-03-31 2024-10-29 东京毅力科创株式会社 等离子体处理装置
JP7712242B2 (ja) 2022-04-01 2025-07-23 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
JP2023171269A (ja) * 2022-05-19 2023-12-01 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
KR20250056935A (ko) * 2022-08-26 2025-04-28 도쿄엘렉트론가부시키가이샤 에칭 방법 및 플라즈마 처리 장치
JP7536941B2 (ja) * 2022-08-30 2024-08-20 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
TW202431406A (zh) * 2022-09-22 2024-08-01 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
KR102733623B1 (ko) * 2022-11-11 2024-11-25 세메스 주식회사 기판 처리 장치의 챔버 내부 표면의 보호막 형성 방법
KR20250116060A (ko) * 2022-12-01 2025-07-31 도쿄엘렉트론가부시키가이샤 에칭 방법 및 플라즈마 처리 장치
KR20250165342A (ko) * 2023-03-28 2025-11-25 도쿄엘렉트론가부시키가이샤 에칭 장치 및 에칭 방법
WO2025089102A1 (ja) * 2023-10-24 2025-05-01 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
WO2025150427A1 (ja) * 2024-01-09 2025-07-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
US20250279283A1 (en) * 2024-03-01 2025-09-04 Applied Materials, Inc. Selective etching of alternating layers of silicon oxide and silicon nitride for high aspect ratio contacts
US20260052921A1 (en) * 2024-08-13 2026-02-19 Applied Materials, Inc. Deep trench isolation etching
TWI912123B (zh) * 2025-01-23 2026-01-11 埃爾思科技股份有限公司 具有單一光學裝置之離子顯微鏡及聚焦離子束系統
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CN114175214A (zh) 2022-03-11
US12142484B2 (en) 2024-11-12
US20220199412A1 (en) 2022-06-23
EP4050641A1 (en) 2022-08-31
JP6990799B2 (ja) 2022-02-03
JP2024133307A (ja) 2024-10-01
US11615964B2 (en) 2023-03-28
KR20240157785A (ko) 2024-11-01
CN116169018A (zh) 2023-05-26
US20230197458A1 (en) 2023-06-22
US20250046615A1 (en) 2025-02-06
JPWO2021090798A1 (ja) 2021-11-25
TW202536963A (zh) 2025-09-16
JP7775384B2 (ja) 2025-11-25
US20220157610A1 (en) 2022-05-19
JP2026012478A (ja) 2026-01-23
JP7525464B2 (ja) 2024-07-30
KR102723916B1 (ko) 2024-10-31
KR102723916B9 (ko) 2025-06-10
WO2021090798A1 (ja) 2021-05-14
JP2022020007A (ja) 2022-01-27
US11551937B2 (en) 2023-01-10
EP4050641A4 (en) 2023-12-13
KR20220082068A (ko) 2022-06-16
CN114175214B (zh) 2023-01-31
KR20210057061A (ko) 2021-05-20
CN116169018B (zh) 2026-04-17

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