KR102399846B1 - 유체를 스프레이 바디들 아래로, 그리고 유입 포트들을 향해 지향시키도록 배향된 유체 배출구들을 이용하는 연마 패드 세정 시스템, 및 관련 방법 - Google Patents

유체를 스프레이 바디들 아래로, 그리고 유입 포트들을 향해 지향시키도록 배향된 유체 배출구들을 이용하는 연마 패드 세정 시스템, 및 관련 방법 Download PDF

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KR102399846B1
KR102399846B1 KR1020177014173A KR20177014173A KR102399846B1 KR 102399846 B1 KR102399846 B1 KR 102399846B1 KR 1020177014173 A KR1020177014173 A KR 1020177014173A KR 20177014173 A KR20177014173 A KR 20177014173A KR 102399846 B1 KR102399846 B1 KR 102399846B1
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South Korea
Prior art keywords
fluid
inlet port
group
polishing pad
spray
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KR1020177014173A
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Korean (ko)
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KR20170073689A (ko
Inventor
폴 디. 버터필드
쇼우 성 창
범 직 김
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어플라이드 머티어리얼스, 인코포레이티드
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/02—Devices or means for dressing or conditioning abrasive surfaces of plane surfaces on abrasive tools
    • H01L21/30625—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
KR1020177014173A 2014-10-24 2015-08-13 유체를 스프레이 바디들 아래로, 그리고 유입 포트들을 향해 지향시키도록 배향된 유체 배출구들을 이용하는 연마 패드 세정 시스템, 및 관련 방법 Active KR102399846B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/523,482 2014-10-24
US14/523,482 US9687960B2 (en) 2014-10-24 2014-10-24 Polishing pad cleaning systems employing fluid outlets oriented to direct fluid under spray bodies and towards inlet ports, and related methods
PCT/US2015/044970 WO2016064467A1 (en) 2014-10-24 2015-08-13 Polishing pad cleaning systems employing fluid outlets oriented to direct fluid under spray bodies and towards inlet ports, and related methods

Publications (2)

Publication Number Publication Date
KR20170073689A KR20170073689A (ko) 2017-06-28
KR102399846B1 true KR102399846B1 (ko) 2022-05-20

Family

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Application Number Title Priority Date Filing Date
KR1020177014173A Active KR102399846B1 (ko) 2014-10-24 2015-08-13 유체를 스프레이 바디들 아래로, 그리고 유입 포트들을 향해 지향시키도록 배향된 유체 배출구들을 이용하는 연마 패드 세정 시스템, 및 관련 방법

Country Status (6)

Country Link
US (1) US9687960B2 (https=)
JP (1) JP6640848B2 (https=)
KR (1) KR102399846B1 (https=)
CN (1) CN107078045B (https=)
TW (1) TWI698305B (https=)
WO (1) WO2016064467A1 (https=)

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WO2016093963A1 (en) * 2014-12-12 2016-06-16 Applied Materials, Inc. System and process for in situ byproduct removal and platen cooling during cmp
KR102401388B1 (ko) * 2016-06-24 2022-05-24 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 연마를 위한 슬러리 분배 디바이스
JP7083722B2 (ja) * 2018-08-06 2022-06-13 株式会社荏原製作所 研磨装置、及び、研磨方法
JP7162465B2 (ja) * 2018-08-06 2022-10-28 株式会社荏原製作所 研磨装置、及び、研磨方法
JP7492854B2 (ja) * 2020-05-11 2024-05-30 株式会社荏原製作所 研磨装置及び研磨方法
US12240078B2 (en) * 2020-06-24 2025-03-04 Applied Materials, Inc. Cleaning system for polishing liquid delivery arm
US11577358B2 (en) 2020-06-30 2023-02-14 Applied Materials, Inc. Gas entrainment during jetting of fluid for temperature control in chemical mechanical polishing
US11724355B2 (en) 2020-09-30 2023-08-15 Applied Materials, Inc. Substrate polish edge uniformity control with secondary fluid dispense
KR102914267B1 (ko) * 2020-11-26 2026-01-20 에스케이실트론 주식회사 연마 패드 세정 장치 및 연마 장치
JP7592362B2 (ja) * 2021-02-02 2024-12-02 株式会社ディスコ 研削方法
CN113977458B (zh) * 2021-11-25 2022-12-02 中国计量科学研究院 抛光液注入装置及抛光系统
CN114888722B (zh) * 2022-05-17 2024-11-22 华海清科股份有限公司 一种化学机械抛光方法
CN118493258A (zh) * 2023-02-16 2024-08-16 成都高真科技有限公司 一种化学机械研磨衬垫的异物清洁设备

Citations (4)

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JP2001237204A (ja) * 2000-02-22 2001-08-31 Hitachi Ltd 半導体装置の製造方法
US20020090896A1 (en) * 2000-02-24 2002-07-11 Li,Et Al Pad Cleaning for a CMP system
US20120167924A1 (en) 2010-12-29 2012-07-05 Semiconductor Manufacturing International (Shanghai) Corporation Cleaning device and a cleaning method of a fixed abrasives polishing pad
US20140148822A1 (en) 2012-11-26 2014-05-29 Nahayan Ameen Abdulla Ibrahim Al Mahza Method and apparatus for polishing human skin

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US5616069A (en) * 1995-12-19 1997-04-01 Micron Technology, Inc. Directional spray pad scrubber
JP3511442B2 (ja) * 1996-12-18 2004-03-29 忠弘 大見 洗浄やエッチング、現像、剥離等を含むウエット処理に用いる省液型の液体供給ノズル、省液型の液体供給ノズル装置及びウエット処理装置
US5916010A (en) * 1997-10-30 1999-06-29 International Business Machines Corporation CMP pad maintenance apparatus and method
JPH11291155A (ja) * 1998-04-10 1999-10-26 Hitachi Cable Ltd 脆性材料研磨用定盤の掃除方法及びその装置並びに研磨装置
JP2001277095A (ja) * 2000-03-31 2001-10-09 Mitsubishi Materials Corp パッドコンディショニング装置及びパッドコンディショニング方法
US6626743B1 (en) * 2000-03-31 2003-09-30 Lam Research Corporation Method and apparatus for conditioning a polishing pad
US6824448B1 (en) 2001-05-31 2004-11-30 Koninklijke Philips Electronics N.V. CMP polisher substrate removal control mechanism and method
KR100500517B1 (ko) 2002-10-22 2005-07-12 삼성전자주식회사 반도체 웨이퍼용 ｃｍｐ 설비
JP2004228301A (ja) * 2003-01-22 2004-08-12 Sharp Corp 基板処理装置および基板処理方法
US6884152B2 (en) * 2003-02-11 2005-04-26 Micron Technology, Inc. Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces
US7004820B1 (en) 2005-05-26 2006-02-28 United Microelectronics Corp. CMP method and device capable of avoiding slurry residues
KR20070121146A (ko) * 2006-06-21 2007-12-27 삼성전자주식회사 화학적 기계적 연마설비의 슬러리 공급장치
KR20100034618A (ko) 2008-09-24 2010-04-01 주식회사 하이닉스반도체 연마 패드의 세정방법
KR101130888B1 (ko) 2010-05-10 2012-03-28 주식회사 케이씨텍 화학 기계적 연마 장치의 캐리어 헤드의 세정 유닛 및 이를 이용한 이동식 화학 기계적 연마 시스템

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237204A (ja) * 2000-02-22 2001-08-31 Hitachi Ltd 半導体装置の製造方法
US20020090896A1 (en) * 2000-02-24 2002-07-11 Li,Et Al Pad Cleaning for a CMP system
US20120167924A1 (en) 2010-12-29 2012-07-05 Semiconductor Manufacturing International (Shanghai) Corporation Cleaning device and a cleaning method of a fixed abrasives polishing pad
US20140148822A1 (en) 2012-11-26 2014-05-29 Nahayan Ameen Abdulla Ibrahim Al Mahza Method and apparatus for polishing human skin

Also Published As

Publication number Publication date
US20160114459A1 (en) 2016-04-28
JP6640848B2 (ja) 2020-02-05
JP2017532790A (ja) 2017-11-02
TWI698305B (zh) 2020-07-11
WO2016064467A1 (en) 2016-04-28
TW201617171A (zh) 2016-05-16
CN107078045A (zh) 2017-08-18
CN107078045B (zh) 2020-11-20
US9687960B2 (en) 2017-06-27
KR20170073689A (ko) 2017-06-28

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