KR102364950B1 - 진공 배기 방법 및 진공 처리 장치 - Google Patents

진공 배기 방법 및 진공 처리 장치 Download PDF

Info

Publication number
KR102364950B1
KR102364950B1 KR1020150185257A KR20150185257A KR102364950B1 KR 102364950 B1 KR102364950 B1 KR 102364950B1 KR 1020150185257 A KR1020150185257 A KR 1020150185257A KR 20150185257 A KR20150185257 A KR 20150185257A KR 102364950 B1 KR102364950 B1 KR 102364950B1
Authority
KR
South Korea
Prior art keywords
vacuum processing
processing chamber
pressure
torr
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020150185257A
Other languages
English (en)
Korean (ko)
Other versions
KR20160078910A (ko
Inventor
히로후미 하가
노부타카 나카오
히데아키 야쿠시지
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20160078910A publication Critical patent/KR20160078910A/ko
Application granted granted Critical
Publication of KR102364950B1 publication Critical patent/KR102364950B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L21/3065—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L2/00—Disinfection or sterilisation of materials or objects, in general; Accessories therefor
    • A61L2/02—Disinfection or sterilisation of materials or objects, in general; Accessories therefor using physical processes
    • A61L2/14—Plasma, i.e. ionised gases
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L2/00—Disinfection or sterilisation of materials or objects, in general; Accessories therefor
    • A61L2/24—Apparatus using programmed or automatic operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H01L21/02041—
    • H01L21/67069—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H01L2021/60187—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y10T137/0324—With control of flow by a condition or characteristic of a fluid
    • Y10T137/0379—By fluid pressure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/85986—Pumped fluid control
    • Y10T137/86002—Fluid pressure responsive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/85986—Pumped fluid control
    • Y10T137/86027—Electric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/86083—Vacuum pump

Landscapes

  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Animal Behavior & Ethology (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020150185257A 2014-12-25 2015-12-23 진공 배기 방법 및 진공 처리 장치 Active KR102364950B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-263378 2014-12-25
JP2014263378A JP6408904B2 (ja) 2014-12-25 2014-12-25 真空引き方法及び真空処理装置

Publications (2)

Publication Number Publication Date
KR20160078910A KR20160078910A (ko) 2016-07-05
KR102364950B1 true KR102364950B1 (ko) 2022-02-17

Family

ID=56165058

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150185257A Active KR102364950B1 (ko) 2014-12-25 2015-12-23 진공 배기 방법 및 진공 처리 장치

Country Status (4)

Country Link
US (1) US9984907B2 (enExample)
JP (1) JP6408904B2 (enExample)
KR (1) KR102364950B1 (enExample)
TW (1) TWI676222B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI756475B (zh) * 2017-10-06 2022-03-01 日商東京威力科創股份有限公司 抑制粒子產生之方法及真空裝置
CN108987235B (zh) * 2018-07-12 2020-06-05 昆山龙腾光电股份有限公司 一种等离子体处理装置
JP7238461B2 (ja) * 2019-02-25 2023-03-14 株式会社島津製作所 バルブ制御装置および真空バルブ
SG11202110276WA (en) * 2019-03-25 2021-10-28 Kokusai Electric Corp Substrate processing apparatus, method of manufacturing semiconductor device, and program
JP7433164B2 (ja) * 2019-08-15 2024-02-19 東京エレクトロン株式会社 基板処理システム
US11742188B2 (en) * 2019-08-15 2023-08-29 Tokyo Electron Limited Substrate processing method, pressure control apparatus and substrate processing system
CN113097095A (zh) * 2019-12-23 2021-07-09 长鑫存储技术有限公司 半导体工艺的控制方法及其系统
NL2025916B1 (en) * 2020-06-25 2022-02-21 Suss Microtec Lithography Gmbh Wet Process Module and Method of Operation
US12072267B2 (en) * 2020-08-31 2024-08-27 Applied Materials, Inc. Method and hardware for post maintenance vacuum recovery system
CN113345979A (zh) * 2021-05-25 2021-09-03 通威太阳能（成都）有限公司 一种真空机台快速复机方法
CN115323359B (zh) * 2022-09-13 2025-09-12 拉普拉斯新能源科技股份有限公司 沉积处理装置
US12286967B2 (en) 2023-01-13 2025-04-29 Hamilton Sundstrand Corporation High turn down ratio direct control for variable displacement pumps
US12411503B2 (en) * 2023-01-13 2025-09-09 Hamilton Sundstrand Corporation High turn down ratio direct control for variable displacement pumps with flow sensing

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000182966A (ja) 1998-12-15 2000-06-30 Sony Corp 気相成長方法および気相成長装置
JP2002249876A (ja) 2001-02-26 2002-09-06 Nec Kansai Ltd 真空排気方法および真空装置
KR100996064B1 (ko) * 2007-06-07 2010-11-22 도쿄엘렉트론가부시키가이샤 진공 흡인 방법 및 기억 매체

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656238A (en) * 1994-10-11 1997-08-12 Johnson & Johnson Medical, Inc. Plasma-enhanced vacuum drying
US5961922A (en) * 1996-10-04 1999-10-05 Johnson & Johnson Medical, Inc. Method and apparatus for detecting water entrapment in a vaccum chamber
JPH10125652A (ja) * 1996-10-16 1998-05-15 Fujitsu Ltd 半導体製造装置
JP3326559B2 (ja) * 1999-08-31 2002-09-24 日本酸素株式会社 Ｃｖｄ装置及びそのパージ方法
US6562141B2 (en) * 2000-07-03 2003-05-13 Andrew Peter Clarke Dual degas/cool loadlock cluster tool
US20030045098A1 (en) * 2001-08-31 2003-03-06 Applied Materials, Inc. Method and apparatus for processing a wafer
US7504066B2 (en) * 2003-09-11 2009-03-17 Tuttnauer Israel Ltd. Ozone plasma medical sterilization
US20050145341A1 (en) * 2003-11-19 2005-07-07 Masaki Suzuki Plasma processing apparatus
JP2006210671A (ja) * 2005-01-28 2006-08-10 Shibaura Mechatronics Corp 半導体製造装置のクリーニング方法
RU2670972C9 (ru) * 2012-09-27 2018-11-22 Сарая Ко., Лтд. Способ и устройство для стерилизации
TWI654695B (zh) * 2012-12-06 2019-03-21 英福康公司 真空工具及測量該真空工具的客真空室中的氛圍的方法
KR101453767B1 (ko) * 2013-03-07 2014-10-22 한신메디칼 주식회사 플라즈마 멸균장치 및 멸균방법
JP2015069987A (ja) * 2013-09-26 2015-04-13 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000182966A (ja) 1998-12-15 2000-06-30 Sony Corp 気相成長方法および気相成長装置
JP2002249876A (ja) 2001-02-26 2002-09-06 Nec Kansai Ltd 真空排気方法および真空装置
KR100996064B1 (ko) * 2007-06-07 2010-11-22 도쿄엘렉트론가부시키가이샤 진공 흡인 방법 및 기억 매체

Also Published As

Publication number Publication date
US20160189988A1 (en) 2016-06-30
TW201635408A (zh) 2016-10-01
KR20160078910A (ko) 2016-07-05
TWI676222B (zh) 2019-11-01
JP2016122795A (ja) 2016-07-07
JP6408904B2 (ja) 2018-10-17
US9984907B2 (en) 2018-05-29

Similar Documents

Publication Publication Date Title
KR102364950B1 (ko) 진공 배기 방법 및 진공 처리 장치
KR102418245B1 (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
US11742188B2 (en) Substrate processing method, pressure control apparatus and substrate processing system
US5423918A (en) Method for reducing particulate contamination during plasma processing of semiconductor devices
US20150118858A1 (en) Etching method for substrate to be processed and plasma-etching device
KR20210042939A (ko) 전자빔 매개 플라즈마 에칭 및 증착 공정을 위한 장치 및 공정
WO2019003663A1 (ja) エッチング方法およびエッチング装置
KR102424480B1 (ko) 다공질막을 에칭하는 방법
KR102289801B1 (ko) 파티클 발생 억제 방법 및 진공 장치
US9812292B2 (en) Etching method
TWI424137B (zh) Vacuum pumping method
JP2019169635A (ja) クリーニング方法及び処理装置
JP2019012732A (ja) プラズマエッチング方法及びプラズマエッチング装置
KR101909784B1 (ko) 상부 전극의 표면 처리 방법, 플라즈마 처리 장치 및 상부 전극
US20190393048A1 (en) Method for area-selective etching of silicon nitride layers for the manufacture of microelectronic workpieces
JP6956696B2 (ja) パーティクル発生抑制方法及び真空装置
TWI698928B (zh) 電漿處理方法
JP2010225847A (ja) 真空処理装置，減圧処理方法，基板処理方法
JPH10294306A (ja) プラズマエッチング装置、プラズマエッチング方法およびプラズマエッチング装置のプラズマクリーニング方法
JP6259610B2 (ja) プラズマ処理装置およびプラズマ処理方法
JP4480012B2 (ja) エッチング方法およびエッチング装置
JP4364011B2 (ja) プラズマ生成方法及びプラズマ生成装置
JP2017199851A (ja) 減圧処理装置
JP2022168672A (ja) 基板処理装置の減圧処理方法及び基板処理装置
JP2011151243A (ja) 基板処理装置のクリーニング方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 5

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000